CN106304484B - Controllable silicon light modulation LED drive power and its dimming controlling method - Google Patents
Controllable silicon light modulation LED drive power and its dimming controlling method Download PDFInfo
- Publication number
- CN106304484B CN106304484B CN201610704961.XA CN201610704961A CN106304484B CN 106304484 B CN106304484 B CN 106304484B CN 201610704961 A CN201610704961 A CN 201610704961A CN 106304484 B CN106304484 B CN 106304484B
- Authority
- CN
- China
- Prior art keywords
- electrically connected
- driving chip
- input
- driving
- average voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 50
- 239000010703 silicon Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000005070 sampling Methods 0.000 claims abstract description 54
- 230000008859 change Effects 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000005611 electricity Effects 0.000 claims description 14
- 230000005669 field effect Effects 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims 1
- 230000001276 controlling effect Effects 0.000 abstract description 10
- 238000012423 maintenance Methods 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 7
- 230000001939 inductive effect Effects 0.000 abstract description 6
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 5
- 241001465382 Physalis alkekengi Species 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000013016 damping Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000004146 energy storage Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 208000032365 Electromagnetic interference Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/10—Controlling the intensity of the light
Landscapes
- Circuit Arrangement For Electric Light Sources In General (AREA)
Abstract
The invention discloses a kind of controllable silicon light modulation LED drive power that can improve thyristor regulating optical depth and its dimming controlling methods；Driving power includes adjusting control circuit, driving chip and LED light string, adjusting control circuit includes input average voltage sampling module, the Input voltage terminal that average voltage sampling module input terminal is electrically connected driving power is inputted, output end is electrically connected to the VLN pins of driving chip；Input average voltage sampling module is used to sample the input average voltage of driving power and is sent into driving chip, to adjust the input current waveform of driving power, to change light modulation depth.Average voltage is inputted to adjust inductive current when Small conduction angle by sampling, improves the light modulation depth of controllable silicon light modulation LED lamp, and realize reduces output current under the premise of not reducing maintenance electric current；By changing the power supply mode of driving chip, flicker may be brought by avoiding constantly restarting for chip.
Description
Technical field
The present invention relates to integrated circuit actuation techniques fields, more particularly to are applied to drive one kind of industry that can change
The controllable silicon light modulation LED drive power and its dimming controlling method of kind thyristor regulating optical depth.
Background technology
Compared with conventional light source, for LED illumination other than having many advantages, such as green, energy-saving and environmental protection, tunable optical is also that its is important
The advantages of.Common dimming mode includes that simulation dims, PWM light modulations, switch on wall light modulation and controllable silicon light modulation.Wherein, may be used
Control silicon light modulation is most widely used, and especially in North America and the Western European countries, almost 90% or more lamps and lanterns are all using silicon-controlled
Light modulation.Light modulation depth be controllable silicon light modulation lamps and lanterns important indicator, represent conduction phase it is smaller when, the minimum LED of flicker free is bright
Degree.Light modulation depth is deeper, and the experience of terminal user is better.But in the case where conduction phase is smaller, output electricity is reduced simply
Stream, although can be with reduce brightness, but input current also reduces therewith, once less than electric current is maintained, it is silicon-controlled to turn off in advance, occur
The phenomenon that flame-out (misfire), LED flickers.In addition, driving chip takes electricity often through one big resistance from busbar, with
The reduction of the angle of flow, supply current reduces therewith, and chip power supply deficiency causes to restart, and also results in flicker.Based on this, to a high-profile
The design of the driving power of the controllable silicon light modulation of optical depth is extremely challenging.
With reference to figure 1, existing controllable silicon light modulation LED drive power configuration diagram.Existing typical controllable silicon light modulation LED
Driving power generally comprises：Controllable silicon dimmer 11, EMI (Electro Magnetic Interference, electromagnetic interference) filters
Wave device 12, rectifier bridge stack 13, energy storage filter capacitor Cin, for decay controlled silicon conducting when LC oscillation damping resistance R0, by electricity
The passive bleeder circuit for hindering R1 and capacitance C1 compositions, to the resistance Rstart that driving chip 14 is powered, the bypass of chip power VCC
Capacitance Cvcc, by inductance L0, diode D0, capacitance Cout, LED light string 15, power MOS pipe M0, resistance Rcs, driving chip 14
The up-down voltage power conversion circuit of composition.
Typical controllable silicon light modulation LED constant current transfer principle is as follows：Using opened loop control, when power MOS pipe M0 is connected, shape
At the access of Vin-L0-M0-Rcs-GND, inductance L0 starts excitation, and inductive current IL is begun to ramp up, when IL rise to it is fixed
Peak point current (Vcs/Rcs) or turn-on time reach preset longest turn-on time (Tonmax) when, M0 shutdowns.After M0 shutdowns, shape
At the access of L0-D0-Cout, inductance L0 starts to demagnetize, and inductive current IL is begun to decline, and when IL is down to zero, L0 demagnetizations are completed,
M0 is connected again at this time, carries out another conversion process of energy.
It can be seen that：When input voltage vin is located near peak value, turned off for constant peak electric current (Vcs/Rcs) control,
Output current at this time：
Io1_avg=0.5* (Vcs/Rcs) * Doff, wherein Doff=Toff/(Ton+Toff)。
It is longest turn-on time (T when input voltage is located at the lowest pointonmax) control shutdown, output current at this time：
Io2_avg=0.5* (Vin/L0) * Tonmax*Doff。
In a complete power frequency period, output current：
Io_avg=(Io1_avg*p1+Io2_avg*p2)/π
Wherein p1 is the phase shared by constant peak current control, and p2 is the shared phase of longest turn-on time control.
With reference to figure 2A-2B, wherein Fig. 2A is the normal work waveform of controllable silicon light modulation LED drive power shown in Fig. 1, figure
2B is work wave of the controllable silicon light modulation LED drive power when the angle of flow is smaller shown in Fig. 1；Wherein, Vin is input voltage,
IL is the electric current of inductance L0, and Imos is the electric current of power MOS pipe M0, and Iac is input current.Based on above-mentioned control method, input
Shape as shown in Figure 2 A is presented in the shape of electric current Iac, and in two kinds of shutdown modes, (shutdown of constant peak current control is led with longest
Logical time control shutdown) reach maximum value at switching.Iac provides the latching current needed for controlled silicon conducting and maintains electric current,
Usual latching current is 2-4 times of maintenance electric current, therefore there are one peak currents in controlled silicon conducting moment needs.R1 and C1 groups
At passive bleeder circuit just provide required peak current.
When adjusting silicon-controlled angle of flow, input voltage vin is cut off corresponding angle, the energy transmission of this part
It is removed, output current also accordingly reduces, and realizes the function of light modulation.As can be seen that need not be answered using open loop control mode
Miscellaneous conduction phase detection circuit, the adjusting of output current are also fairly simple.But its shortcoming has at 2 points：
1, using resistance Rstart from bussed supply, it is possible to provide electric current：
Istart=(Vin-VCC)/Rstart；
When angle of flow very little, input voltage vin very little, Istart is also very low, and chip power supply is insufficient, when Vin drops to core
Chip shutdown switch acts when piece under-voltage locking voltage, and constantly restarting for chip may bring flicker.
Input current Iac highests when 2, (as shown in Figure 2 B) when angle of flow very little, due to two kinds of shutdown modes switchings,
Shape as shown in Figure 2 B is presented in Iac, in order to ensure that enough maintenance electric currents, output current can not reduce so that light modulation depth
It can not be made very deep.
Therefore, it is necessary to the driving powers to existing controllable silicon light modulation to be improved, and not reduce the premise for maintaining electric current
Under, inductive current when adjusting Small conduction angle improves the light modulation depth of controllable silicon light modulation LED lamp.
Invention content
It is an object of the present invention to adjust silicon-controlled conducting for controllable silicon light modulation LED drive power in the prior art
When angle there are the problem of, a kind of adjusting control circuit, controllable silicon light modulation LED drive power and its dimming controlling method are provided,
Realize that under the premise of not reducing maintenance electric current, inductive current when adjusting Small conduction angle improves the tune of controllable silicon light modulation LED lamp
Optical depth.
To achieve the above object, the present invention provides a kind of adjusting control circuits, are applied to controllable silicon light modulation LED driving electricity
Source, the driving power include driving chip, and the adjusting control circuit includes input average voltage sampling module, the input
Average voltage sampling module input terminal is electrically connected the Input voltage terminal of driving power, and output end is electrically connected to the driving core
The VLN pins of piece；The input average voltage sampling module is used to sample the input average voltage of the driving power and is sent into
The driving chip, to adjust the input current waveform of the driving power, to change light modulation depth.
To achieve the above object, the present invention also provides a kind of controllable silicon light modulation LED drive powers, including brightness adjustment control electricity
Road, driving chip and LED light string, the adjusting control circuit include input average voltage sampling module, and the input is average
Voltage sample module input is electrically connected the Input voltage terminal of driving power, and output end is electrically connected to the driving chip
VLN pins；The input average voltage sampling module is used to sample described in input average voltage and the feeding of the driving power
Driving chip, to adjust the input current waveform of the driving power, to change light modulation depth.
To achieve the above object, the present invention also provides a kind of dimming controlling method of controllable silicon light modulation LED drive power,
Using controllable silicon light modulation LED drive power of the present invention, the dimming controlling method includes step：Sample driving power
Input voltage terminal input average voltage, and be sent into the driving chip of driving power to adjust input current waveform to change
Dim depth.
The advantage of the invention is that：Controllable silicon light modulation LED drive power provided by the invention inputs average electricity by sampling
Pressure improves the light modulation depth of controllable silicon light modulation LED lamp to adjust inductive current when Small conduction angle so that light modulation depth
It can be made deep, realize reduces output current under the premise of not reducing maintenance electric current, does not influence the simultaneous of driving power
Capacitive.The power supply mode for having changed simultaneously driving chip ensure that chip power supply, avoid chip in angle of flow very little
Flicker may be brought by constantly restarting.Average voltage is inputted by sampling and changes the power supply mode of driving chip so that LED light
The light modulation depth of tool can meet various requirement.
Description of the drawings
Fig. 1, existing controllable silicon light modulation LED drive power configuration diagram；
Fig. 2A -2B, the work wave of existing controllable silicon light modulation LED drive power；
Fig. 3, controllable silicon light modulation LED drive power configuration diagram of the present invention；
Fig. 4, the schematic diagram of input average voltage sampling module first embodiment of the present invention；
Fig. 5, the schematic diagram of input average voltage sampling module second embodiment of the present invention；
Fig. 6, the schematic diagram of one embodiment of power supply module of the present invention；
Fig. 7 is the linear relationship schematic diagram that driving power shown in Fig. 3 adjusts peak point current according to input average voltage；
Fig. 8 is work wave of the driving power when the angle of flow is smaller shown in Fig. 3.
Specific implementation mode
Controllable silicon light modulation LED drive power provided by the invention and its dimming controlling method are done in detail below in conjunction with the accompanying drawings
Explanation.
With reference to figure 3, controllable silicon light modulation LED drive power configuration diagram of the present invention.The controllable silicon light modulation
LED drive power includes at least adjusting control circuit, driving chip 34 and LED light string 35；Wherein adjusting control circuit includes
Controllable silicon dimmer 31, electromagnetic interface filter 32, rectifier bridge stack 33, energy storage filter capacitor Cin, for decay controlled silicon conducting when LC
The damping resistance R0 of oscillation and the passive bleeder circuit being made of resistance R1 and capacitance C1；The one end AC power AC is electrically connected
Controllable silicon dimmer 31, the other end are electrically connected damping resistance R0；It is connected between the VCC pin and GND pin of driving chip 34
The shunt capacitance Cvcc of chip power VCC；Driving chip 34, inductance L0, diode D0, capacitance Cout, LED light string 35, power
Metal-oxide-semiconductor M0 and resistance Rcs form up-down voltage power conversion circuit.Rectifier bridge stack 33 is arranged after electromagnetic interface filter 32, rectification
Bridge heap 33 can be that four diodes is used to form full-bridge rectifiers with by AC rectification；Energy storage is filtered in addition to using capacitance
Outside Cin, other filtering modes can also be used, the direct current after rectified 33 rectification of bridge heap is filtered.
The adjusting control circuit further includes input average voltage sampling module 36, the input average voltage sampling module
36 input terminals are electrically connected the Input voltage terminal Vin of driving power, and the VLN that output end is electrically connected to the driving chip 34 draws
Foot (i.e. the low pressure pin of driving chip)；The input that the input average voltage sampling module is used to sample the driving power is flat
Equal voltage is simultaneously sent into the driving chip 34, to adjust the input current waveform of the driving power, to change light modulation depth.
Average voltage is inputted by sampling, realizes and adjusts peak point current when the angle of flow is smaller to change light modulation depth so that light modulation
Depth can be made deep, but the influence very little to maintaining electric current, not influence the compatibility of driving power.
With reference to figure 4, the schematic diagram of input average voltage sampling module first embodiment of the present invention；In the present embodiment
In, the input average voltage sampling module 36 includes：Pull-up resistor RVLN1, pull down resistor RVLN2, sampling resistor R2 and adopt
Sample capacitance C2.The pull-up resistor RVLN1One end is electrically connected the Input voltage terminal Vin, and the other end is electrically connected the drop-down
Resistance RVLN2One end, while being electrically connected one end of the sampling resistor R2；The pull down resistor RVLN2The other end is grounded；Institute
State the VLN pins that the sampling resistor R2 other ends are electrically connected to the driving chip 34；The one end the sampling capacitance C2 electrically connects
It is connected to the VLN pins of the driving chip 34, other end ground connection.
Introduce RVLN1、RVLN2, R2, C2 composition input average voltage sampling module sampling input average voltage, and be sent into drive
Dynamic chip controls adjust input current waveform, and realizing does not influence to maintain to reduce output current under the premise of electric current so that LED
The light modulation depth of lamps and lanterns can meet the design requirement of the driving power of the controllable silicon light modulation of lofty tone optical depth.
With reference to figure 5, the schematic diagram of input average voltage sampling module second embodiment of the present invention.In the present embodiment
In, the input average voltage sampling module 36 includes：Pull-up resistor RVLN1, pull down resistor RVLN2, transistor M2 and sampling
Capacitance C2.The pull-up resistor RVLN1One end is electrically connected the Input voltage terminal Vin, and the other end is electrically connected the drop-down electricity
Hinder RVLN2One end, while being electrically connected the control terminal of the transistor M2；The pull down resistor RVLN2The other end is grounded；It is described
The first end of transistor M2 is electrically connected the Input voltage terminal Vin, and second end is electrically connected to the VLN of the driving chip 34
Pin；The one end the sampling capacitance C2 is electrically connected to the VLN pins of the driving chip 34, other end ground connection.
Optionally, the transistor M2 is N-type metal-oxide-semiconductor, and MOS transistor is to control the electricity in raceway groove with surface field
Stream.The control terminal of the transistor M2 be the grid of N-type metal-oxide-semiconductor, M2 first end be the drain electrode of N-type metal-oxide-semiconductor, M2 second end
For the source electrode of N-type metal-oxide-semiconductor.The transistor M2 may be p-type metal-oxide-semiconductor or triode etc., and connection type is according to transistor
Type is adaptively adjusted.
Embodiment illustrated in fig. 5 and embodiment illustrated in fig. 4 the difference is that, sampling resistor R2 is substituted using transistor M2.
Likewise, introducing RVLN1、RVLN2, M2, C2 composition input average voltage sampling module sampling input average voltage, and be sent into drive
Dynamic chip controls adjust input current waveform, and realizing does not influence to maintain to reduce output current under the premise of electric current so that LED
The light modulation depth of lamps and lanterns can meet the design requirement of the driving power of the controllable silicon light modulation of lofty tone optical depth.
As preferred embodiment, the driving power further includes power supply module 37,37 one end of power supply module electricity
Property is connected to the HV pins of the driving chip 34, and is electrically connected to the LED by the HV pins of the driving chip 34
The anode of lamp string 35,37 other end of the power supply module are electrically connected to the VCC pin of the driving chip 34；The power supply mould
Block 37 is used to the positive terminal voltage of the LED light string 35 being supplied to the VCC pin of the driving chip 34.Core is driven by change
The power supply mode of piece is powered for the VCC pin from the anode of LED light string by power supply module to driving chip, when angle of flow very little
When, it ensure that chip power supply, flicker may be brought by avoiding constantly restarting for chip.
Preferably, the power supply module 37 is integrated in inside the driving chip 34, reduces peripheral component, is conducive to drive
The miniaturization and simplification of dynamic power-supply system.
With reference to figure 6, the schematic diagram of one embodiment of power supply module of the present invention.The power supply module 37 includes：One knot
Type field-effect transistor JFET, one first triode Q1, a switching tube K1 and a hysteresis loop comparator CP1.Junction field is brilliant
Body pipe is to control the electric current in folded raceway groove with the electric field on PN junction.
The drain electrode of the junction field effect transistor JFET is electrically connected to HV pins (the i.e. driving chip of driving chip
High pressure pin)；The collector of first triode Q1 described in the source electrode of JFET；The grid of JFET is electrically connected first triode
The first end of the base stage of Q1 and the switching tube K1, the second end ground connection (IC GND) of the switching tube K1.The resistor
The one end Rcf is electrically connected the source electrode of JFET, and the other end is electrically connected the grid of JFET.The emitter electricity of the first triode Q1
Property be connected to the VCC pin (i.e. the power pins of driving chip, be chip power supply) of the driving chip.The hysteresis loop comparator
The positive input terminal of CP1 is electrically connected the VCC pin of the driving chip, and the negative input end of CP1 is electrically connected a reference voltage
The output end of Vref, CP1 are electrically connected to the control terminal of the switching tube K1, to control the conducting and cut-off of K1；Wherein, described
The hysteresis window of hysteresis loop comparator CP1 be Vhys, chip (IC GND) voltage be floating voltage.
When HV leads ends voltage HV be higher than VCC pin end supply voltage VCC, and supply voltage VCC be less than with reference to electricity
When pressing Vref, charging current flows to VCC pin end by JFET and Q1 from HV leads ends；The charging current to VCC pin outside
The capacitance C that portion is electrically connectedVCCCharging so that VCC voltages gradually rise.Q1 base currents flow through resistor Rcf, lead to JFET
Source voltage it is more slightly higher than grid；The grid voltage ratio VCC voltages of JFET are high at this time, and the current capacity of JFET is very strong；Due to big
For electric current to the capacitor charging, VCC voltages can rise rapidly to the startup voltage threshold set up in chip, complete chip and start.
The power supply module is realized powers to chip power simultaneously in quick start, and power supply capacity is strong, solves existing driving power
Power supply circuit when angle of flow very little, Vin very littles, chip power supply is insufficient, the shutdown switch when dropping to under-voltage locking voltage
Action, chip constantly restart the shortcomings that may bringing flicker.And all components of the power supply module are suitble to be integrated in drive
Dynamic chip interior, reduces peripheral component；When for switch power supply system, it is conducive to the miniaturization and letter of switch power supply system
Dan Hua.
Optionally, the switching tube K1 is N-type metal-oxide-semiconductor, the control terminal of K1 be the grid of N-type metal-oxide-semiconductor, K1 first end be
The drain electrode of N-type metal-oxide-semiconductor, the source electrode that the second end of K1 is N-type metal-oxide-semiconductor.The switching tube K1 may be p-type metal-oxide-semiconductor or three poles
Pipe etc., connection type is adaptively adjusted according to transistor types.
As preferred embodiment, the power supply module 37 further comprises：One second triode Q2；Described 2nd 3
The collector of pole pipe Q2 is electrically connected the collector of the first triode Q1, and the base stage of Q2 is electrically connected the emitter of Q1, Q2
Emitter be electrically connected to the VCC pin of the driving chip.If driving chip power consumption is larger, two triodes may be used
Darlington transistor is formed, the emitter of Darlington transistor is electrically connected to VCC pin, and the base stage of Darlington transistor is electrically connected junction type field effect
Answer the grid of transistor JFET and the first end of switching tube K1.Darlington transistor is exactly that two triodes are connected together, and polarity is only
Recognize the triode of front, before triode power it is general small than triode below, before transistor base be Darlington transistor base stage,
Triode emission extremely Darlington transistor emitter below, for usage as triode, amplification factor is two triode times magnifications
Several products.
As preferred embodiment, the power supply module 37 further comprises：One first diode D1 and one second
Diode D2, using as forward conduction, reversed resistance to voltage device.The source electrode of the junction field effect transistor JFET is electrically connected institute
The anode of the first diode D1 is stated, and is electrically connected to the collector of the first triode Q1 by D1；The junction type field effect
It answers the grid of transistor JFET to be electrically connected the anode of the second diode D2, and the described 1st is electrically connected to by D2
The base stage of pole pipe Q1.If driving chip VCC output voltages are relatively high, need to prevent the VCC electric currents at VCC pin end from pouring in down a chimney into HV
Leads ends, otherwise power supply can be insufficient, and chip is caused to be restarted repeatedly.Diode D1 and D2 is as forward conduction, reversed resistance to voltage device,
VCC is enable to work in higher voltage.Darlington transistor and diode can be used for preventing electric current from pouring in down a chimney in the present invention, and simultaneously
As reversed resistance to voltage device.If VCC output voltages are relatively low, D1 and D2 can be not provided with.D1 and D2 can use practical two poles
Pipe is realized, but is not limited to practical diode, such as can be realized with the triode of base-collector junction short circuit.
It is the linear relationship signal that driving power shown in Fig. 3 adjusts peak point current according to input average voltage with reference to figure 7
Figure, it is illustrated that middle VLN is that the voltage of driving chip VLN pins is (i.e. flat by inputting the collected input of average voltage sampling module
Equal voltage), Vcs is the voltage of driving chip CS pins, and VcsL is the corresponding voltage of Vcs lower limits, when VL is that Vcs is transferred to lower limit
The corresponding voltage of VLN pins, VTH are VLN pins corresponding voltage when Vcs starts to adjust, and Vcso is that driving chip CS pins are defeated
The voltage gone out.
According to input average voltage peak point current, specific embodiment party are adjusted (by inputting the acquisition of average voltage sampling module)
Formula is as follows：
Work as VLN>When VTH, peak point current maintains Vcs/Rcs constant, i.e., when the angle of flow is more than this critical conduction angle, operating wave
Shape is unaffected；
Work as VLN<When VTH, peak point current reduces therewith；
As VLN=VL, peak point current then minimizes value VcsL/Rcs.Even if hereafter VLN continues to reduce, peak point current
Also it remains unchanged.
It is work wave of the driving power when the angle of flow is smaller shown in Fig. 3 with reference to figure 8, it is illustrated that in, it is shown in solid to be
The work wave after VLN compensation (by the input average voltage for inputting the acquisition of average voltage sampling module) is introduced, shown in dotted line
For the work wave before compensation.On the one hand regulative mode it can be seen from diagram after above-mentioned introducing VLN compensation reduces peak value
Electric current, that is, reduce output current, on the other hand reduces the slope of input current Iac so that the peak value of the switching point of Iac subtracts
It is small, achieve the effect that, by Iac approximation mean allocations, to have substantially no effect on maintenance electric current.That is, inputting average electricity by sampling
Pressure, peak point current is adjusted when the angle of flow is smaller, to change light modulation depth, but the influence very little to maintaining electric current, is not influenced
Compatibility.
The present invention also provides a kind of dimming controlling method of controllable silicon light modulation LED drive power, use is of the present invention
Controllable silicon light modulation LED drive power, the dimming controlling method includes step：Sample the Input voltage terminal of driving power
Average voltage is inputted, and is sent into the driving chip of driving power and changes light modulation depth to adjust input current waveform.Pass through
Sampling input average voltage, peak point current is adjusted when the angle of flow is smaller, to change light modulation depth, but the shadow to maintaining electric current
Very little is rung, compatibility is not influenced.
Specifically：When the input average voltage that the VLN pins of driving chip receive is more than the CS pin electricity of driving chip
Press off beginning (VLN when the corresponding voltage of VLN pins when adjusting>VTH), peak point current maintains Vcs/Rcs constant；I.e. the angle of flow is more than
When this critical conduction angle, work wave is unaffected；
When the CS pin voltages that the input average voltage that the VLN pins of driving chip receive is less than driving chip start to adjust
(VLN when the corresponding voltage of VLN pins when section<VTH), peak point current is gradually reduced；
When the CS pin voltages that the input average voltage that the VLN pins of driving chip receive is equal to driving chip are transferred to down
In limited time when the corresponding voltage of VLN pins (VLN=VL), peak point current is then down to a minimum VcsL/Rcs, and in driving chip
The input average voltage that receives of VLN pins when continuing to reduce peak point current maintain the minimum constant.
On the one hand the regulative mode introduced after VLN compensation reduces peak point current, that is, reduce output current, on the other hand
Reduce the slope of input current Iac so that the peak value of the switching point of Iac reduces, and has reached the effect of Iac approximation mean allocations
Fruit has substantially no effect on maintenance electric current.
As preferred embodiment, the driving power further includes power supply module, and described power supply module one end electrically connects
The HV pins of the driving chip are connected to, and the LED light string is being electrically connected to just by the HV pins of the driving chip
End, the power supply module other end are electrically connected to the VCC pin of the driving chip；The dimming controlling method also wraps
It includes：The positive terminal voltage of the LED light string is supplied to the VCC pin of the driving chip by the power supply module.The confession
The composition of electric module can refer to described in embodiment illustrated in fig. 6, and details are not described herein again.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (15)
1. a kind of adjusting control circuit is applied to controllable silicon light modulation LED drive power, the driving power includes driving chip,
It is characterized in that, the adjusting control circuit includes input average voltage sampling module, the input average voltage sampling module
Input terminal is electrically connected the Input voltage terminal of driving power, and output end is electrically connected to the VLN pins of the driving chip；
The input average voltage sampling module is used to sample the input average voltage of the driving power and is sent into the driving
Chip, to adjust the input current waveform of the driving power, to change light modulation depth.
2. adjusting control circuit according to claim 1, which is characterized in that the input average voltage sampling module packet
It includes：Pull-up resistor, pull down resistor, sampling resistor and sampling capacitance；
Described pull-up resistor one end is electrically connected the Input voltage terminal, and the other end is electrically connected one end of the pull down resistor,
It is electrically connected one end of the sampling resistor simultaneously；
The pull down resistor other end ground connection；
The sampling resistor other end is electrically connected to the VLN pins of the driving chip；
Described sampling capacitance one end is electrically connected to the VLN pins of the driving chip, other end ground connection.
3. adjusting control circuit according to claim 1, which is characterized in that the input average voltage sampling module packet
It includes：Pull-up resistor, pull down resistor, transistor and sampling capacitance；
Described pull-up resistor one end is electrically connected the Input voltage terminal, and the other end is electrically connected one end of the pull down resistor,
It is electrically connected the control terminal of the transistor simultaneously；
The pull down resistor other end ground connection；
The first end of the transistor is electrically connected the Input voltage terminal, and second end is connected to the VLN of the driving chip
Pin；
Described sampling capacitance one end is electrically connected to the VLN pins of the driving chip, other end ground connection.
4. adjusting control circuit according to claim 3, which is characterized in that the transistor is N-type metal-oxide-semiconductor, the crystalline substance
The control terminal of body pipe be the grid of N-type metal-oxide-semiconductor, the transistor first end be the draining of N-type metal-oxide-semiconductor, the transistor
Second end is the source electrode of N-type metal-oxide-semiconductor.
5. a kind of controllable silicon light modulation LED drive power, including adjusting control circuit, driving chip and LED light string, feature exist
In the adjusting control circuit includes input average voltage sampling module, the input average voltage sampling module input terminal electricity
Property connection driving power Input voltage terminal, output end is electrically connected to the VLN pins of the driving chip；
The input average voltage sampling module is used to sample the input average voltage of the driving power and is sent into the driving
Chip, to adjust the input current waveform of the driving power, to change light modulation depth.
6. driving power according to claim 5, which is characterized in that the input average voltage sampling module uses right
It is required that the input average voltage sampling module in adjusting control circuit described in 2-4 any one.
7. driving power according to claim 5, which is characterized in that the driving power further includes power supply module,
Described power supply module one end is electrically connected to the HV pins of the driving chip, and the HV pins for passing through the driving chip
It is electrically connected to the anode of the LED light string, the VCC that the power supply module other end is electrically connected to the driving chip draws
Foot；
The power supply module is used to the positive terminal voltage of the LED light string being supplied to the VCC pin of the driving chip.
8. driving power according to claim 7, which is characterized in that the power supply module includes：One junction field is brilliant
Body pipe, a resistor, one first triode, a switching tube and a hysteresis loop comparator；
The drain electrode of the junction field effect transistor is electrically connected to the HV pins of the driving chip, and the junction field is brilliant
The source electrode of body pipe is electrically connected the collector of first triode, and the grid of the junction field effect transistor is electrically connected institute
State the base stage of the first triode and the first end of the switching tube, the second end ground connection of the switching tube；
Described resistor one end is electrically connected the source electrode of the junction field effect transistor, and the other end is electrically connected the junction type field
The grid of effect transistor；
The emitter of first triode is electrically connected to the VCC pin of the driving chip；
The positive input terminal of the hysteresis loop comparator is electrically connected the VCC pin of the driving chip, and the hysteresis loop comparator is born
Input terminal is electrically connected a reference voltage, and the output end of the hysteresis loop comparator is electrically connected to the control terminal of the switching tube,
To control the conducting and cut-off of the switching tube.
9. driving power according to claim 8, which is characterized in that the switching tube is N-type metal-oxide-semiconductor, the switching tube
Control terminal be the grid of N-type metal-oxide-semiconductor, the switching tube first end be the draining of N-type metal-oxide-semiconductor, the switching tube second
End is the source electrode of N-type metal-oxide-semiconductor.
10. driving power according to claim 8, which is characterized in that the power supply module further comprises：One the 2nd 3
Pole pipe；The collector of second triode is electrically connected the collector of first triode, the base of second triode
Pole is electrically connected the emitter of first triode, and the emitter of second triode is electrically connected to the driving chip
VCC pin.
11. driving power according to claim 8, which is characterized in that the power supply module further comprises：One the 1st
Pole pipe and one second diode, using as forward conduction, reversed resistance to voltage device；
The source electrode of the junction field effect transistor is electrically connected the anode of first diode, and passes through the one or two pole
Pipe is electrically connected to the collector of first triode；
The grid of the junction field effect transistor is electrically connected the anode of second diode, and passes through the two or two pole
Pipe is electrically connected to the base stage of first triode.
12. according to the driving power described in claim 7-11 any one, which is characterized in that the power supply module is integrated in institute
It states inside driving chip.
13. a kind of dimming controlling method of controllable silicon light modulation LED drive power, using the controllable silicon light modulation described in claim 5
LED drive power, which is characterized in that the dimming controlling method includes step：
The input average voltage of the Input voltage terminal of driving power is sampled, and is sent into the driving chip of driving power to adjust input
Current waveform is to change light modulation depth.
14. dimming controlling method according to claim 13, which is characterized in that
When the CS pin voltages that the input average voltage that the VLN pins of driving chip receive is more than driving chip start to adjust
When the corresponding voltage of VLN pins, peak point current remains unchanged；
When the CS pin voltages that the input average voltage that the VLN pins of driving chip receive is less than driving chip start to adjust
When the corresponding voltage of VLN pins, peak point current is gradually reduced；
When the CS pin voltages that the input average voltage that the VLN pins of driving chip receive is equal to driving chip are transferred to lower limit
When the corresponding voltage of VLN pins, peak point current is then down to a minimum, and the input received in the VLN pins of driving chip
Peak point current maintains the minimum constant when average voltage continues to reduce.
15. dimming controlling method according to claim 13, which is characterized in that the driving power further includes power supply mould
Block, described power supply module one end is electrically connected to the HV pins of the driving chip of the driving power, and passes through the driving core
The HV pins of piece are electrically connected to the anode of the LED light string of the driving power, and the power supply module other end is electrically connected to
The VCC pin of the driving chip；The dimming controlling method further includes：
The positive terminal voltage of the LED light string is supplied to the VCC pin of the driving chip by the power supply module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610704961.XA CN106304484B (en) | 2016-08-22 | 2016-08-22 | Controllable silicon light modulation LED drive power and its dimming controlling method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610704961.XA CN106304484B (en) | 2016-08-22 | 2016-08-22 | Controllable silicon light modulation LED drive power and its dimming controlling method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106304484A CN106304484A (en) | 2017-01-04 |
| CN106304484B true CN106304484B (en) | 2018-11-13 |
Family
ID=57614656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610704961.XA Active CN106304484B (en) | 2016-08-22 | 2016-08-22 | Controllable silicon light modulation LED drive power and its dimming controlling method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106304484B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107071964B (en) * | 2017-02-10 | 2019-04-30 | 深圳欧创芯半导体有限公司 | Low voltage difference output current overshoot suppression circuit |
| CN107949095A (en) * | 2017-10-31 | 2018-04-20 | 浙江凯耀照明股份有限公司 | LED light High voltage output control device and control method |
| CN108575038A (en) * | 2018-05-31 | 2018-09-25 | 赛尔富电子有限公司 | A kind of intelligent electric power and the auxiliary monitoring method for intelligent electric power |
| CN110461055B (en) * | 2019-06-24 | 2024-03-22 | 杰华特微电子股份有限公司 | Lighting driving circuit and method and lighting system |
| CN110769544B (en) * | 2019-09-10 | 2025-01-10 | 江苏帝奥微电子股份有限公司 | Control circuit and control method compatible with thyristor dimmer |
| CN113179565B (en) * | 2021-05-06 | 2024-01-12 | 上海奥简微电子科技有限公司 | LED silicon controlled rectifier dimming depth compensation circuit and LED lighting device |
| CN114170961B (en) * | 2021-12-14 | 2023-03-14 | 云谷（固安）科技有限公司 | Display driving device, system and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103841725A (en) * | 2014-03-05 | 2014-06-04 | 上海晶丰明源半导体有限公司 | Bleeding control module and silicon-controlled dimming LED drive circuit and system |
| CN203801109U (en) * | 2014-02-10 | 2014-08-27 | 上海晶丰明源半导体有限公司 | Maximum brightness enhancing module, silicone controlled rectifier dimming LED driving circuit and silicone controlled rectifier dimming LED driving system |
| CN104768296A (en) * | 2015-03-31 | 2015-07-08 | 矽力杰半导体技术(杭州)有限公司 | LED dimming driving circuit |
| CN204810610U (en) * | 2015-06-30 | 2015-11-25 | 华润矽威科技（上海）有限公司 | Non - isolation LED constant current drive chip and circuit |
| CN206077748U (en) * | 2016-08-22 | 2017-04-05 | 上海晶丰明源半导体股份有限公司 | Adjusting control circuit and controllable silicon light modulation LED drive power |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101909394B (en) * | 2010-09-02 | 2015-06-03 | Bcd半导体制造有限公司 | Drive circuit and method of dimming LED lamp |
| CN102364990B (en) * | 2011-02-01 | 2012-10-10 | 杭州士兰微电子股份有限公司 | Switching power supply controller for constant current driving of LED by primary side control and method therefor |
-
2016
- 2016-08-22 CN CN201610704961.XA patent/CN106304484B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203801109U (en) * | 2014-02-10 | 2014-08-27 | 上海晶丰明源半导体有限公司 | Maximum brightness enhancing module, silicone controlled rectifier dimming LED driving circuit and silicone controlled rectifier dimming LED driving system |
| CN103841725A (en) * | 2014-03-05 | 2014-06-04 | 上海晶丰明源半导体有限公司 | Bleeding control module and silicon-controlled dimming LED drive circuit and system |
| CN104768296A (en) * | 2015-03-31 | 2015-07-08 | 矽力杰半导体技术(杭州)有限公司 | LED dimming driving circuit |
| CN204810610U (en) * | 2015-06-30 | 2015-11-25 | 华润矽威科技（上海）有限公司 | Non - isolation LED constant current drive chip and circuit |
| CN206077748U (en) * | 2016-08-22 | 2017-04-05 | 上海晶丰明源半导体股份有限公司 | Adjusting control circuit and controllable silicon light modulation LED drive power |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106304484A (en) | 2017-01-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106304484B (en) | Controllable silicon light modulation LED drive power and its dimming controlling method | |
| CN1161007C (en) | Ballast | |
| CN206077748U (en) | Adjusting control circuit and controllable silicon light modulation LED drive power | |
| CN1156201C (en) | Anti-flicker circuit for fluorescent lamp ballast driver | |
| US8803432B2 (en) | Method and apparatus for determining a target light intensity from a phase-control signal | |
| CN101489336B (en) | Constant current source control circuit | |
| US10326374B2 (en) | Power supply circuit with converter circuit | |
| CN101404844B (en) | LED light modulation apparatus suitable for controlled silicon dimmer | |
| US10172199B1 (en) | Light-actuated wide voltage range LED lamp driver circuit | |
| CN101527983B (en) | White-light LED illumination driving circuit on basis of current-type charge pump | |
| US20100295478A1 (en) | Led driving circuit | |
| CN104168697B (en) | Output current control circuit used for switch section dimming of LED driving power supply | |
| WO2015135168A1 (en) | Led driving circuit compatible with silicon-controlled dimmer | |
| CN1228242A (en) | Ballast for compact fluorescent lamp with current protection | |
| WO2020098372A1 (en) | Drive circuit | |
| CN103025021B (en) | Step-down light emitting diode (LED) drive circuit based on electrical inductance discharge time modulation | |
| CN110099476B (en) | High-integration-level high-PF intelligent dimming circuit structure | |
| CN207099392U (en) | Power supply circuit and apply its LED drive circuit | |
| CN106231727A (en) | Produce the method for the stable DC signal of telecommunication, reverse-blocking tetrode thyristor light-dimming method and device | |
| CN216017207U (en) | Dimming low-end acceleration starting circuit | |
| CN208210363U (en) | A kind of high PF Intelligent dimming circuit structure of high integration | |
| CN104780695B (en) | A kind of LED non-pole light regulatings constant-current driving power supply | |
| CN110312339B (en) | Light-adjustable LED lamp circuit | |
| CN209419924U (en) | A kind of thyristor regulating light control circuit and lighting circuit | |
| CN206559675U (en) | A kind of LED dimming driving circuits |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 5 room 504-511, room 2, Lane 666, Zhang Heng Road, Pudong New Area, China (Shanghai) free trade zone, Shanghai, China () Applicant after: Shanghai semiconducto Limited by Share Ltd Address before: 201204 Zhang Heng road Shanghai, Pudong New Area Zhangjiang hi tech Park Lane 666 No. 2 floor 504-511 room 5 Applicant before: Shanghai Bright Power Semiconductor Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |