CN106303307B - Imaging sensor and its control method - Google Patents
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- CN106303307B CN106303307B CN201510275416.9A CN201510275416A CN106303307B CN 106303307 B CN106303307 B CN 106303307B CN 201510275416 A CN201510275416 A CN 201510275416A CN 106303307 B CN106303307 B CN 106303307B
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Abstract
The invention discloses a kind of control methods of imaging sensor, which comprises the following steps: S1, the pixel for controlling described image sensor carry out long integral and short integral；And S2, the actual size of the primary color value of saturation is calculated by the primary color value ratio between the unsaturated primary color value and the tristimulus values of short integral in any tristimulus values saturation of the long integral of the pixel.The present invention also provides a kind of imaging sensors.Therefore, the imaging sensor of embodiment of the present invention and its control method avoid dark current increase and noise from becoming larger while promoting dynamic range.
Description
Technical field
The present invention relates to imaging technique, in particular to a kind of imaging sensor and its control method.
Background technique
CMOS complementary metal-oxide-semiconductor field-effect (complementary metal-oxide semiconductor,
CMOS) imaging sensor include pixel array (pixel array), control circuit, AFE(analog front end) processing circuit, A/D converter,
Imaging signal processing circuit and relational storage etc..With the development of cmos image sensor, Pixel Dimensions are smaller and smaller, but compared with
The dynamic range of the pixel of small size is by photodiode saturated electrons capacity limit.
The prior art mainly improves the photoelectricity of photodiode by improving Implantation Energy and the implantation dosage of N-type ion
Lotus carrying capacity, the photoperceptivity of Lai Tisheng photodiode；Or increase the depth of photodiode to increase photodiode
The charge carrying capacity that photodiode is improved to the capacity gauge of electronics, promotes the photoperceptivity of photodiode.
But Implantation Energy and the implantation dosage of PDN ion are improved to promote the charge carrying capacity of photodiode, meeting
Increase liter photodiode exhausts (Pinned) voltage, in addition, dark current is bigger than normal.The injection of large dosage of big energy damages lattice
Wound increasing etc. causes dark current increase and noise to become larger.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art.For this purpose, the present invention needs to provide one
Kind imaging sensor and its control method.
The imaging sensor of embodiment of the present invention includes:
Pixel array；
Controller, the short integral of pixel for controlling the pixel array is to obtain the ratio of the primary color value between tristimulus values
Example, the controller are also used to control the long integral of the pixel；
Processor, for being integrated in any tristimulus values saturation of the long integral of the pixel by the way that the pixel is long
Unsaturated primary color value and the primary color value ratio calculate the actual size of the primary color value of saturation.
In some embodiments, the processor includes:
Judging unit, for judging whether any tristimulus values of the long integral of the pixel are saturated；And
Computing unit, for calculating the primary color value ratio in any tristimulus values saturation and not satisfied according to described
The primary color value of sum and the primary color value ratio calculate the actual size of the primary color value of the saturation.
In some embodiments, the judging unit is also used to when the tristimulus values of the pixel are unsaturated
The computing unit is notified to skip over the calculating of the pixel.
In some embodiments, the controller is also used to control the pixel array and reads integration data line by line；Institute
Stating imaging sensor further includes memory；The memory includes plurality of rows of memory cells；Storage unit described in every row is for storing
Integration data described in a line；For controlling the pixel array, length integrates and reads long fraction line by line the controller line by line
According to the controller is for controlling the pixel after successively storing the long integration data to the storage unit of odd-numbered line
Array, which resets, starts short integral, and the controller is also used to control the pixel array when reading the long integration data of row k
Short integration data is read line by line, and the short integration data for successively being stored the storage list to even number line by the controller
Member.
The control method of the imaging sensor of embodiment of the present invention comprising following steps:
S1, the pixel for controlling described image sensor carry out long integral and short integral；
S2 passes through the unsaturated original of the long integral of the pixel in any tristimulus values saturation of the long integral of the pixel
Primary color value ratio between the tristimulus values of color value and the short integral of the pixel calculates the actual size of the primary color value of saturation.
In some embodiments, the step S2 includes:
S21: judge whether any tristimulus values of the long integral of the pixel are saturated；And
S22: the primary color value ratio is calculated and according to the unsaturated primary colors in any tristimulus values saturation
Value and the primary color value ratio calculate the actual size of the primary color value of the saturation.
In some embodiments, the step S2 includes:
When the tristimulus values of the pixel are unsaturated, the computing unit of notice described image sensor skips over institute
State the calculating of pixel.
In some embodiments, the step S1 includes:
The pixel array of control described image sensor is long line by line to integrate and reads line by line long integration data, will the long product
Divided data controls the pixel battle array after successively storing to the storage unit of the odd-numbered line of the memory of described image sensor
Column, which reset, starts short integral, controls the pixel array and reads short integration data line by line when reading the long integration data of row k,
The short integration data is successively stored to the storage unit to even number line.
The imaging sensor and its control method of embodiment of the present invention avoid dark current while promoting dynamic range
Increase and noise becomes larger.
Additional aspect and advantage of the invention will be set forth in part in the description, and will partially become from the following description
Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect and advantage of the invention is from combining in description of the following accompanying drawings to embodiment by change
It obtains obviously and is readily appreciated that, in which:
Fig. 1 is the functional block diagram of the imaging sensor of an embodiment of the invention.
Fig. 2 is the working principle diagram of the imaging sensor of an embodiment of the invention.
Fig. 3 is another working principle diagram of the imaging sensor of an embodiment of the invention.
Fig. 4 is the flow diagram of the control method of the imaging sensor of an embodiment of the invention.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width
Degree ", " thickness ", " go up ", " under ", " preceding ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " bottom ", " interior ", " outside ", "
Clockwise ", " counterclockwise " wait the orientation or positional relationship of instructions to be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second " are only
For descriptive purposes, it is not understood to indicate or imply relative importance or implicitly indicates the number of indicated technical characteristic
Amount." first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more spy
Sign.In the description of the present invention, " multiple " are meant that two or more, unless otherwise specifically defined.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected or can mutually communicate；It can be directly connected, it can also be by between intermediary
It connects connected, can be the connection inside two elements or the interaction relationship of two elements.For the ordinary skill of this field
For personnel, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature its " upper " or it " under "
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " top " and " above " include first spy
Sign is right above second feature and oblique upper, or is merely representative of first feature horizontal height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and it is " following " including fisrt feature right above second feature and oblique upper, or be merely representative of
First feature horizontal height is less than second feature.
Following disclosure provides many different embodiments or example is used to realize different structure of the invention.In order to
Simplify disclosure of the invention, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
Referring to Fig. 1, embodiments of the present invention imaging sensor 100 includes pixel array 10, controller 20 and processing
Device 30.Pixel 11 of the controller 20 for controlling pixel array 10 is short to be integrated to obtain the primary color value ratio between tristimulus values,
Controller 20 is also used to control the long integral of pixel 11.Processor 30 is used in any tristimulus values saturation of the long integral of pixel 11
The actual size of the primary color value of saturation is calculated by unsaturated primary color value and primary color value ratio.
In present embodiment, pixel array 10 has Bayer (Bayer) structure, i.e. red pixel (is equipped with red band logical filter
Mating plate so that only red luminous energy pass through it is sensed) 11r, green pixel (be equipped with green bandpass filter, so that only green
Luminous energy passes through sensed) 11gb, 11gr and blue pixel (be equipped with blue bandpass filter so that only blue luminous energy pass through by
Sensing) 11b composition Bayer unit 12.Pixel value (the color of each pixel 11r, 11gb, 11gr or 11b in Bayer unit 12
Value) by tristimulus values expression, (according to color theory, each color value can resolve into red, green and blue three primary colors
Value, it can indicated by red, green and blue tristimulus values), i.e. red value R (i.e. the pixel value of red pixel 11r), green
Value G (i.e. the pixel value mean value of green pixel 11gb, 11gr) and blue valve B (i.e. the pixel value of blue pixel 11b).
In other words, in the present embodiment, three primary colors are optics three primary colors (RGB).Certainly, in other embodiments
In, the three primary colors can also be printing three primary colors (the trichromatic complementary color of optics): green (C), pinkish red (M), yellow (Y).
Referring to Figure 2 together, controller 20 by time for exposure T can control pixel array 10 each pixel 11r,
The charge integration time (for example, time for exposure T) of 11gb, 11gr or 11b may thereby determine that each pixel 11r, 11gb,
Tristimulus values R, G, B of 11gr or 11b.However, in actual use, the comparison of light and shade of certain scenes is excessively strong, make
The characteristic for obtaining certain dark portion in order to obtain is just needed using longer time for exposure T, and in this case, it is limited to pixel array 10
Overexposure may occur for certain primary color values of the dynamic range of itself, certain highlights, the dynamic range beyond pixel array 10 it
Outside, such as shown in Fig. 2, after the time of integration (for time for exposure T), green pixel 11gb, 11gr and blue pixel 11b overexposure
(charge spilling) can not indicate each true primary color value G, B of pixel 11r, 11gb, 11gr or 11b.
However, for each pixel 11r, 11gb, 11gr or 11b, within a certain period of time, color value be it is fixed,
I other words the ratio (i.e. R: G: B, referred to as primary color value ratio) of tristimulus values be it is fixed, therefore, in entire integral process,
Primary color value ratio will not change.
In this way, can use the short integral of each pixel 11r, 11gb, 11gr or 11b to obtain primary color value ratio (integral
Time be much smaller than time for exposure T, at this time each pixel 11r, 11gb, 11gr or 11b will not overexposure, therefore, primary color value ratio
It is true), then, if thering is any primary color value R, G, B to be saturated in long integral, pass through unsaturated primary color value and primary color value
Ratio calculates the actual size of the primary color value of saturation.
For example, passing through short integral (time of integration is that T ' is much smaller than time for exposure T) available tristimulus values in Fig. 2
R ', G ', B ', and therefore obtain primary color value ratio R ': G ': B '.And at long integral (time of integration is time for exposure T), primary colors
Value G, B saturation, i.e. green pixel 11gb, 11gr and blue pixel 11b overexposure.However, the actual size of primary color value G, B can lead to
It crosses and is calculated below:
G=(G ' * R)/R '；And
B=(B ' * R)/R '.
Therefore, the imaging sensor 10 of embodiment of the present invention not using by improve N-type ion Implantation Energy and
Implantation dosage promotes the dynamic range of pixel array to improve the optical charge carrying capacity of photodiode, and dark current is avoided to increase
Add and noise becomes larger.
In the present embodiment, processor includes judging unit 31 and computing unit 32.Judging unit 31 is for judging to grow
Whether any tristimulus values R, G, B of integral are saturated.Computing unit 32 is used to calculate in any tristimulus values R, G, B saturation former
Color value ratio R ': G ': B ' and the primary color value for calculating according to unsaturated primary color value and primary color value ratio R ': G ': B ' saturation
Actual size.
Referring to Fig. 3, for certain dark portion pixel 11r, 11gb, 11gr or 11b, in long integral, tristimulus values R, G, B
It is unsaturated, it is therefore not necessary to calculate, in this way, first judging to notify computing unit 32 to omit pixel later by judging unit 31
The calculating of the primary color value ratio of 11r, 11gb, 11gr or 11b, it is possible to reduce calculation amount.
Controller 10 is also used to control pixel array 10 and reads integration data (i.e. the pixel value of full line) line by line.Image sensing
Device 10 further includes having memory 40.Memory 40 is divided into plurality of rows of memory cells, such as ten line storage unit 41-4a.Every row is deposited
Storage unit is for storing (caching) a line integration data.
In present embodiment, controller 20 controls pixel array 10, and length is integrated line by line and reading integration data is successively deposited line by line
The short integral of progress is resetted after storing up odd number line storage unit, and reads short integration data line by line when reading the integration data of k row
Successively even number line storage unit is arrived in storage.Reset, which refers to, carries out charge clearing to pixel (k is natural number).
For example, when exposure starts, to Nth row, (N is picture to the 1st row of the control pixel array 10 of controller 20 by taking k=4 as an example
Total line number of pixel array 10, the time slot of every row are t) long integral line by line, and line n (n is natural number, generally tens
Or several hundred) start the long integration data (i.e. time for exposure T=(n-1) * t) that the 1st row is read when long integral, then the 1st row resets
Carry out short integral；When the (n+1)th row starts long integral, the long integration data of the 2nd row is read, then the 2nd row, which resets, carries out short product
Point, and so on.
The short fraction of the 1st row is read after reading the long integration data 4 of the 4th row (k=4) and storing to storage unit 41
According to 1 ' and store to storage unit 42；The 2nd row is read after reading the long integration data 5 of the 5th row and storing to storage unit 42
Short integration data 2 ', and so on, until reading the long integration data 8 of eighth row and storing to reading the 5th after storage unit 49
After capable short integration data 5 ', memory 40 is full.The long integration data 9 for reading the 9th row will be stored in storage unit 1 and the 6th row
Short integration data 6 ' storage unit 42 will be stored in, start new circulation.And the long integration data 4 of the 4th row and the 1st row is short
Integration data 1 ' has been read out processor 30 and is handled, such as judgement or calculating.
In this way, one come when can use the long integral of the pixel of back row, carried out using row before after the completion of long integral short
Integral, to keep entire exposure process more compact.Furthermore it is also possible to improve the utilization rate of memory 40.
Referring to Fig. 4, the control method of the imaging sensor of embodiments of the present invention includes:
S1, control pixel 11r, 11gb, 11gr or 11b carry out long integral and short integral；
S2 passes through unsaturation in any tristimulus values R, G, B saturation that pixel 11r, 11gb, 11gr or 11b long are integrated
Primary color value R, G or the tristimulus values R ' of B and short integral, G ', primary color value ratio R ': G ': B ' between B ' calculate saturation
The actual size of primary color value.
In some embodiments, step S2 includes:
S21: judge whether pixel 11r, 11gb, 11gr or any tristimulus values R, G, B of 11b long integral are saturated；And
S22: calculated in any tristimulus values saturation primary color value ratio R ', G ', B ' and according to unsaturated primary color value and
Primary color value ratio calculates the actual size of the primary color value of saturation.
In some embodiments, step S2 includes:
When tristimulus values R, G, B of pixel are unsaturated notice computing unit 32 skip over pixel 11r, 11gb, 11gr or
The calculating of 11b.
In some embodiments, step S1 includes:
Control pixel array 10, which grows integral line by line and reads long integration data line by line, successively stores the odd number for arriving memory 40
It is resetted after line storage unit and starts short integral, and read short integration data line by line successively when reading the long integration data of row k
Store the even number line storage unit of memory 40.
In the description of this specification, reference term " embodiment ", " some embodiments ", " schematically implementation
What the description of mode ", " example ", " specific example " or " some examples " etc. meant to describe in conjunction with the embodiment or example
Particular features, structures, materials, or characteristics are contained at least one embodiment or example of the invention.In this specification
In, schematic expression of the above terms are not necessarily referring to identical embodiment or example.Moreover, the specific spy of description
Sign, structure, material or feature can be combined in any suitable manner in any one or more embodiments or example.
While embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that:
These embodiments can be carried out with a variety of variations, modification, replacement in the case where not departing from the principle of the present invention and objective and become
Type, the scope of the present invention are defined by the claims and their equivalents.
Claims (8)
1. a kind of imaging sensor characterized by comprising
Pixel array；
Controller, the short integral of pixel for controlling the pixel array is to obtain the primary color value ratio between tristimulus values, institute
It states controller and is also used to control the long integral of the pixel；
Processor, for being integrated not in any tristimulus values saturation of the long integral of the pixel by the way that the pixel is long
The primary color value of saturation and the primary color value ratio calculate the actual size of the primary color value of saturation.
2. imaging sensor as described in claim 1, which is characterized in that the processor includes:
Judging unit, for judging whether any tristimulus values of the long integral of the pixel are saturated；And
Computing unit, for calculating the primary color value ratio and according to described unsaturated in any tristimulus values saturation
Primary color value and the primary color value ratio calculate the actual size of the primary color value of the saturation.
3. imaging sensor as claimed in claim 2, which is characterized in that the judging unit is also used to the institute in the pixel
State tristimulus values it is unsaturated when notify the computing unit to skip over the calculating of the pixel.
4. imaging sensor as described in claim 1, which is characterized in that the controller is also used to control the pixel array
Integration data is read line by line；Described image sensor further includes memory；The memory includes plurality of rows of memory cells；Every row institute
Storage unit is stated for integration data described in storing one row；For controlling, the pixel array is long line by line to be integrated simultaneously the controller
Long integration data is read line by line, and the long integration data for successively being stored the storage list to odd-numbered line by the controller
The pixel array is controlled after member and is resetted and starts short integral, and the controller is also used to control the pixel array and is reading kth
Short integration data is read when capable long integration data line by line, the controller, which is used to successively store the short integration data, arrives idol
Several rows of the storage unit.
5. a kind of control method of imaging sensor, which comprises the following steps:
S1, the pixel for controlling described image sensor carry out long integral and short integral；And
S2 passes through the unsaturated primary color value of the long integral of the pixel in any tristimulus values saturation of the long integral of the pixel
And the primary color value ratio between the tristimulus values of the short integral of pixel calculates the actual size of the primary color value of saturation.
6. the control method of imaging sensor as claimed in claim 5, which is characterized in that the step S2 includes:
S21: judge whether any tristimulus values of the long integral of the pixel are saturated；And
S22: in any tristimulus values saturation calculating the primary color value ratio and according to the unsaturated primary color value and
The primary color value ratio calculates the actual size of the primary color value of the saturation.
7. the control method of imaging sensor as claimed in claim 6, which is characterized in that the step S2 includes:
When the tristimulus values of the pixel are unsaturated, the computing unit of notice described image sensor skips over the picture
The calculating of element.
8. the control method of imaging sensor as claimed in claim 6, which is characterized in that the step S1 includes:
The pixel array of control described image sensor is long line by line to be integrated and reads long integration data line by line, by the long fraction
It is multiple according to the pixel array is controlled after successively storage to the storage unit of the odd-numbered line of the memory of described image sensor
Position starts short integral, controls the pixel array and reads short integration data line by line when reading the long integration data of row k, by institute
It states short integration data and successively stores the storage unit for arriving even number line.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101057493A (en) * | 2004-11-02 | 2007-10-17 | 松下电器产业株式会社 | Image sensor |
| CN101841676A (en) * | 2010-03-26 | 2010-09-22 | 青岛海信电器股份有限公司 | Display processing method, device, system and television |
| CN102800297A (en) * | 2012-07-19 | 2012-11-28 | 友达光电股份有限公司 | Method for processing image signal |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3788393B2 (en) * | 2002-06-10 | 2006-06-21 | ソニー株式会社 | Digital still camera device, video camera device and information terminal device |
| US8605177B2 (en) * | 2009-09-16 | 2013-12-10 | Altasens, Inc. | Image sensor with wide dynamic range |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101057493A (en) * | 2004-11-02 | 2007-10-17 | 松下电器产业株式会社 | Image sensor |
| CN101841676A (en) * | 2010-03-26 | 2010-09-22 | 青岛海信电器股份有限公司 | Display processing method, device, system and television |
| CN102800297A (en) * | 2012-07-19 | 2012-11-28 | 友达光电股份有限公司 | Method for processing image signal |
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Effective date of registration: 20191231 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |