CN106298791A - Programmable non-volatile memory and the utilization on semiconductor storage unit thereof - Google Patents
Programmable non-volatile memory and the utilization on semiconductor storage unit thereof Download PDFInfo
- Publication number
- CN106298791A CN106298791A CN201610828469.3A CN201610828469A CN106298791A CN 106298791 A CN106298791 A CN 106298791A CN 201610828469 A CN201610828469 A CN 201610828469A CN 106298791 A CN106298791 A CN 106298791A
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- China
- Prior art keywords
- programmable non
- volatile memory
- semiconductor memory
- selector
- memory
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- 230000015654 memory Effects 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 239000010416 ion conductor Substances 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 239000003513 alkali Substances 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims description 17
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical group [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 claims description 7
- 229910014299 N-Si Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 230000005055 memory storage Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000005368 silicate glass Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001415 sodium ion Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000008672 reprogramming Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Semiconductor Memories (AREA)
Abstract
A kind of repeatable programming nonvolatile memory, writes the life-span to improve data and keeps the life-span, using ion conductor as ion memory storage.This ion conductor doping alkali ion and there is the resistance heater being adjacent.Can be applicable to repeatable programming nonvolatile semiconductor device.When it is applied to semiconductor memory, the PN junction of the most described semiconductor memory terminates the part of the P-type conduction side on surface, covers the ion conductor thin film doped with alkali ion as ion storage device, and has the resistance heating layer being adjacent.
Description
Technical field
The present invention relates generally to the nonvolatile memory with the repeatable programming of ion storage, particularly relate to a kind of profit
With the nonvolatile semiconductor memory of the repeatable programming of ion storage, be suitable to the high density of repeatable programming and depositing of capacity
Storage application.More particularly, it relates to have flash memory structure, unconfined write the life-span (as reprogramming cycle count) and prolongation number
According to the memory device in holding life-span, the most at high temperature.
Background technology
The development of the repeatable programming nonvolatile semiconductor memory being currently known, either inversion of phases, conductive bridge
Type, ferroelectric type, floating gate type or resistor-type.With memory density, retentivity, remanent magnetism, write-read erasing speed and operating temperature range
Etc. comparing, write erasing cycle count or write the important indicator that the life-span is reliability, it is accordingly required in particular to noting.
In floating gate type memory, flash memory and other kinds of memorizer make use of tunneling effect, such as on April 8th, 1975
United States Patent (USP) US3877054, erasing operation will cause the degeneration of gate insulator and the decline of reliability, on August 1st, 2006
United States Patent (USP) US7085161 propose to utilize wear leveling technology and circulating technology to alleviate.The longevity write by conducting bridge direct type memorizer
Life aspect may be also facing to similar restriction, such as United States Patent (USP) US2016/081518 on July 23rd, 2016, meanwhile, and another
Aspect, ferroelectric type memorizer, such as United States Patent (USP) US5969981 on October 19th, 1999, the Russian Patent on July 6th, 1972
SU434871, has height and writes the life-span, but its read operation has destructiveness, need follow-up storage Refresh Data.Along with phase transformation
The development of type memorizer, Chinese patent CN101000944 or the U.S. on 11 days April nineteen ninety-five such as on January 10th, 2006 are special
Profit US5406509, the resistor-type memory that phase transformation is relevant, such as United States Patent (USP) US8520245 on August 27th, 2013, it is shown that
Height writes life parameter.They also indicate that the partial power in write operation and erasing operation consumes the most important, and they are the most at last
Become the restriction writing life parameter.
Therefore, it is still necessary to programmable non-volatile memory has height and writes life-span and the erasing operation of lower powered write-read.
Summary of the invention
The present invention provides a kind of programmable non-volatile memory and at semiconductor memory based on above-mentioned technical problem
Utilization on part.
A kind of programmable non-volatile memory, comprises ion conductor, it is characterised in that: as described in ion storage device
Ion conductor doping alkali ion, and there is the resistance heater being adjacent.
As preferably, described ion conductor doping Na.
As preferably, described memorizer is semiconductor memory, and at least, the PN junction of described semiconductor memory terminates surface
The part of P-type conduction side, cover described ion conductor thin film and there is the resistance heating layer being adjacent.
As preferably, described thin film is alumina silicate glass thin film.
As preferably, described resistance heating layer is Ti-N-Si thin film.
As preferably, the p-type side of described semiconductor memory is used for being connected to BIT line, the N-type of described semiconductor memory
Selector ground connection is passed through in side, and described selector is connected to ENABLE line by WORD line traffic control, described resistance heating layer.
As preferably, the p-type side of described semiconductor memory is used for being connected to BIT line, the N-type of described semiconductor memory
Side is connected to WORD line by selector, and described resistance heating layer is connected to ENABLE line.
As preferably, described semiconductor memory is connected with switching device, and the N-shaped side of described semiconductor device is by selecting
Device is connected to WORD line, and described resistance heating layer is connected to ENABLE line.
As preferably, described selector is transistor, the N-type side of the described semiconductor memory gold by described selector
Belonging to pole and be connected to WORD line and ground, described resistance heating layer is connected to ENABLE line.
As preferably, by the reverse biased on the ENABLE signal on ENABLE line and described PN junction, perform write operation.
As preferably, by the reverse biased on described PN junction, perform write operation.
As preferably, by the ENABLE signal of input on described ENABLE line, perform erasing operation.
As preferably, described memorizer is diode.
As preferably, described memorizer is transistor.
As preferably, described selector is diode.
Owing to the write and erase operation of data is the most only based only on the lossless promotion aluminosilicate as ion storage device
Quick diffusion ion in glassy layer carries out suitable redistribution, and the present invention has and high writes the life-span, meanwhile, and temperature-driven
Write enable and ensure that at a temperature of the operation of 85 DEG C or lower, at least 104Hour high data keep the life-span.
Accompanying drawing explanation
The semiconductor memory apparatus of Fig. 1 present invention based on diode；
The semiconductor memory apparatus of Fig. 2 present invention based on transistor；
The semiconductor memory apparatus of Fig. 3 present invention writes the typical performance of erasure sequence；
One basic unit of storage of Fig. 4 semiconductor storage unit of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, embodiments of the present invention are described in detail.
Embodiment one
Fig. 1 is the most basic embodiment of the memory element of the present invention, a diode, comprises resistivity and is about 1 Ω cm,
Thickness is of about the substrate of 1 μm.The anode region 1-1 of p-type silicon layer and the cathode chamber 1-2 of n-type silicon layer is formed respectively in substrate.
On the termination surface of the pn-junction that alumina silicate glass layer 1-3 is formed between the anode region 1-1 of p-type and the cathode chamber 1-2 of N-shaped,
And doping content is 8*1016-2*1017cm-3Na.The thick Ti-N-Si resistance heater 1-4 of 0.5um it is coated with above it,
Hard contact 1-5,1-6 are connected with anode region 1-1 and cathode chamber 1-2 respectively.Utilize the mesa technology method of standard and technology with
Structure described in formation.
In concrete operations, utilize the resistance heater 1-4 covered up that alumina silicate glass layer 1-3 is heated, to increase
Adding the mobility of wherein Na ion, the electric field being applied simultaneously between contact 1-5,1-6 promotes the redistribution of described ion, promotees
It is made to pile up at the negative bias of the near interface of the anode region 1-1 of the p-type of alumina silicate glass layer 1-3.When the electric charge piled up be enough to
When the anode region 1-1 of p-type forms the reverse-biased layer of secondary table of N-shaped, the resistivity of diode is compared original state and is declined 3-4 quantity
Level.Under zero-bias conditions, heating alumina silicate glass layer 1-3 again so that diode recovery is to initial condition.Due to data
Write and erase operation be the most only based only on lossless promote as in the alumina silicate glass layer 1-3 of ion storage device quick
The suitable redistribution of diffusion ion, the present invention has and high writes the life-span (Fig. 3), and meanwhile, writing of temperature-driven makes can ensure that
, at a temperature of the operation of 85 DEG C or lower, at least 104Hour high data keep the life-span.
Fig. 4 is the basic application of the present embodiment, BIT/Y line be connected to contact 1-5, contact 1-6 by selector (as
MOSFET) ground connection.Write operation needs in advance the resistance heater network of whole memory block to be applied ENABLE signal, and WRITE believes
Number applied by selector.ENABLE signal can certainly be provided by other selector, so that it is guaranteed that RAM type operation,
But this will cause the corresponding increase of memory element volume.Erasing operation needs only to apply ENABLE signal, but, one
In a little embodiments, it is also possible to the energizing signal of the WRITE signal applied by synchronization promotes erasing operation.
Embodiment two
Fig. 2 is another basic embodiment of the memory element of the present invention, and a MOS transistor comprises resistivity and is about 1
Ω cm, thickness is of about the p-type silicon substrate 2-1 of 1 μm, and the source area 2-2 of the N-shaped being formed on substrate 2-1 and leakage
Polar region 2-3.Aluminum silicate salt deposit 2-4(gate insulator) about 0.5 μ m-thick, doping content is 8*1016-2*1017cm-3Na, and
And a part of overlay area 2-1,2-2,2-3.The resistance heater 2-6 that metal pole 2-5 with Ti-N-Si makes is positioned at aluminum silicate
On salt deposit 2-4, hard contact 2-7,2-8 connect source area 2-2 and drain region 2-3, the SiO of 0.8 μ m-thick respectively2Layer 2-9, covers
The remainder of lid substrate 2-1 top surface.Described structure can be formed by mesa technology method and technology.
In concrete operations, the resistance heater 2-6 covered up is utilized aluminum silicate salt deposit 2-4 to be heated, to increase it
The mobility of middle Na ion, Na ion redistributes in aluminum silicate salt deposit 2-4 under the biasing of metal pole 2-5, is formed at base
The accumulation of the positive charge of the near interface of end 2-1, and cause loss, ultimately result in time top layer upset and conduct electricity for N-shaped, and source
Resistance between polar region 2-2 and drain region 2-3 is compared the decline of original state and is up to 3-4 the order of magnitude.Again heat aluminum silicate
Salt deposit 2-4 so that diode recovery is to initial condition.Owing to the write and erase operation of data is the most only based only on lossless promotion
As the suitable redistribution of the quick diffusion ion in the aluminum silicate salt deposit 2-4 of ion storage device, the present invention has high
Write the life-span.
The basic application in memory arrays of the MOS transistor of the present invention, substantially similar with Fig. 4, only need to do phase
The change answered.
It is understandable that in other embodiments, such as switching device, four-layer diode or breakdown diode, Ke Yizuo
For any one selector of the cross-point arrangement of memory array, or suitably select with other as storage device itself
Device combines, such as diode.The present invention can also be by not having the device of PN junction, as implemented based on charge coupled device.It addition,
May by introduce any opposite polarity static electric charge amendment ion conductor, therefore allow the recruiting mutually of individual memory cells
Put, or the modifier amendment of dielectric constant or pcrmeability.Other possible application can utilize the redistribution of moving iron
The change of the dielectric constant, refractive index or the permeability that cause, stores data by capacitive character, rotation or optical read-out.This area
Technical staff, for reaching specific purpose, it is also possible to the basic skills of the present invention is carried out other suitably change and amendments.Therefore
The basic scheme of the present invention, simply comprise utilize ion conductor as ion storage device, this ion conductor doping alkali ion,
And there is resistance heater positioned adjacent.When it is applied to semiconductor memory, the most described semiconductor memory
PN junction terminate the part of P-type conduction side on surface, cover the ion conductor thin film doped with alkali ion as ion storage
Device, and there is the resistance heating layer being adjacent.
Claims (15)
1. a programmable non-volatile memory, comprises ion conductor, it is characterised in that: as described in ion storage device from
Sub-conductor doping alkali ion, and there is the resistance heater being adjacent.
A kind of programmable non-volatile memory the most according to claim 1, it is characterised in that: described ion conductor adulterates
Na。
A kind of programmable non-volatile memory the most according to claim 1 and 2, it is characterised in that: described memorizer is
Semiconductor memory, at least, the PN junction of described semiconductor memory terminates the part of the P-type conduction side on surface, cover described from
Sub-conductor thin film and there is the resistance heating layer being adjacent.
A kind of programmable non-volatile memory the most according to claim 3, it is characterised in that: described thin film is aluminum silicate
Salt glass film.
A kind of programmable non-volatile memory the most according to claim 4, it is characterised in that: described resistance heating layer is
Ti-N-Si thin film.
A kind of programmable non-volatile memory the most according to claim 3, it is characterised in that: described semiconductor memory
P-type side be used for being connected to BIT line, the N-type side of described semiconductor memory pass through selector ground connection, described selector is by WORD
Line traffic control, described resistance heating layer is connected to ENABLE line.
A kind of programmable non-volatile memory the most according to claim 3, it is characterised in that: described semiconductor memory
P-type side be used for being connected to BIT line, the N-type side of described semiconductor memory is connected to WORD line, described resistance by selector
Zone of heating is connected to ENABLE line.
A kind of programmable non-volatile memory the most according to claim 7, it is characterised in that: described semiconductor memory
Connecting with switching device, the N-shaped side of described semiconductor device is connected to WORD line by selector, and described resistance heating layer connects
To ENABLE line.
A kind of programmable non-volatile memory the most according to claim 6, it is characterised in that: described selector is crystal
Pipe, the N-type side of described semiconductor memory is connected to WORD line and ground by the metal pole of described selector, and described resistance heats
Layer is connected to ENABLE line.
A kind of programmable non-volatile memory the most according to claim 3, it is characterised in that: by ENABLE line
ENABLE signal and described PN junction on reverse biased, perform write operation.
11. a kind of programmable non-volatile memories according to claim 3, it is characterised in that: by described PN junction
Reverse biased, perform write operation.
12. a kind of programmable non-volatile memories according to claim 3, it is characterised in that: by described ENABLE
The ENABLE signal of input on line, performs erasing operation.
13. a kind of programmable non-volatile memories according to claim 3, it is characterised in that: described memorizer is two
Pole is managed.
14. a kind of programmable non-volatile memories according to claim 3, it is characterised in that: described memorizer is brilliant
Body pipe.
15. a kind of programmable non-volatile memories according to claim 6, it is characterised in that: described selector is two
Pole is managed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610828469.3A CN106298791B (en) | 2016-09-19 | 2016-09-19 | Programmable non-volatile memory and its utilization on semiconductor storage unit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610828469.3A CN106298791B (en) | 2016-09-19 | 2016-09-19 | Programmable non-volatile memory and its utilization on semiconductor storage unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106298791A true CN106298791A (en) | 2017-01-04 |
| CN106298791B CN106298791B (en) | 2019-02-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610828469.3A Expired - Fee Related CN106298791B (en) | 2016-09-19 | 2016-09-19 | Programmable non-volatile memory and its utilization on semiconductor storage unit |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62205598A (en) * | 1986-03-05 | 1987-09-10 | Hitachi Ltd | Information storage/reproduction method and information storage carrier |
| US20120235108A1 (en) * | 2009-02-04 | 2012-09-20 | John Smythe | Method of forming memory cell using gas cluster ion beams |
| US20130082229A1 (en) * | 2011-09-30 | 2013-04-04 | Industrial Technology Research Institute | Mixed ionic-electronic conduction memory cell |
| US20140131653A1 (en) * | 2012-11-13 | 2014-05-15 | Feng-Ming Lee | Unipolar programmable metallization cell |
-
2016
- 2016-09-19 CN CN201610828469.3A patent/CN106298791B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62205598A (en) * | 1986-03-05 | 1987-09-10 | Hitachi Ltd | Information storage/reproduction method and information storage carrier |
| US20120235108A1 (en) * | 2009-02-04 | 2012-09-20 | John Smythe | Method of forming memory cell using gas cluster ion beams |
| US20130082229A1 (en) * | 2011-09-30 | 2013-04-04 | Industrial Technology Research Institute | Mixed ionic-electronic conduction memory cell |
| US20140131653A1 (en) * | 2012-11-13 | 2014-05-15 | Feng-Ming Lee | Unipolar programmable metallization cell |
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| Publication number | Publication date |
|---|---|
| CN106298791B (en) | 2019-02-15 |
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