CN106298415B - A kind of governance structure of ion implantation apparatus vertical direction implant angle - Google Patents
A kind of governance structure of ion implantation apparatus vertical direction implant angle Download PDFInfo
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- CN106298415B CN106298415B CN201610889586.0A CN201610889586A CN106298415B CN 106298415 B CN106298415 B CN 106298415B CN 201610889586 A CN201610889586 A CN 201610889586A CN 106298415 B CN106298415 B CN 106298415B
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- faraday
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- vertical direction
- ion implanter
- ion
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- 239000007943 implant Substances 0.000 title claims abstract description 7
- 238000005468 ion implantation Methods 0.000 title abstract description 13
- 150000002500 ions Chemical class 0.000 claims description 87
- 238000002513 implantation Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 19
- 239000007924 injection Substances 0.000 claims description 19
- 238000005452 bending Methods 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000009417 prefabrication Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/243—Beam current control or regulation circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of governance structure of ion implantation apparatus vertical direction implant angle, a faraday including several palisade graphite-structures is rotatably mounted by the tail end of the technological reaction chamber in ion implantation apparatus, and gap is all had between the adjacent palisade graphite-structure, and opening is provided with so that part ion can be by the gap and opening across faraday in the framework at corresponding gap, so that when being measured to ion implantation apparatus vertical direction implant angle, it can be according to the implant angle of the acquiring size ion implantation apparatus vertical direction of the angle and electric current of Faraday rotation, and then it can effectively manage the implant angle of ion implantation apparatus vertical direction, improve the yield of product.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a control structure for an injection angle of an ion implanter in the vertical direction.
Background
Ion implanters are critical devices in pre-fabrication processes for integrated circuits, and ion implantation is a technique for doping regions near the surface of semiconductors with the purpose of altering the carrier concentration and conductivity type of the semiconductor. Compared with the conventional thermal doping process, the ion implantation can accurately control the aspects of implantation dosage, implantation angle, implantation depth, transverse diffusion and the like, overcomes the limitation of the conventional process, improves the integration level, the starting speed, the yield and the service life of a circuit, and reduces the cost and the power consumption. The ion implanter is widely used for doping process, can meet the requirements of shallow junction, low temperature, accurate control and the like, and becomes essential key equipment in the integrated circuit manufacturing process.
For semiconductor products, the middle beam ion implanter directly affects the product turn-on voltage (BV) in the ion implantation process (especially, the ion implantation process related to the turn-on voltage (BL POCKET IMP)), and the implantation angle of the middle beam ion implanter in the ion implantation process is also a very critical parameter, which directly affects the turn-on voltage and the product yield of the device. At present, a medium beam ion implanter in the semiconductor industry can only control the X-Tilt angle (angle in X direction), the Y-Tilt angle (angle in Y direction) and the Twist angle of a wafer (wafer) during implantation, but the control of the beam vertical implantation angle (beam vertical angle) is missing, which is very not beneficial to the improvement of the product yield, and is not expected by those skilled in the art.
Disclosure of Invention
Aiming at the existing problems, the invention discloses a control structure for the injection angle of an ion implanter in the vertical direction, which comprises a Faraday;
the Faraday is rotatably arranged at the tail end of a process reaction cavity of the ion implanter and comprises a frame body provided with an accommodating space and a plurality of grid-shaped graphite structures which are arranged in the accommodating space in parallel;
gaps are formed between every two adjacent grid-shaped graphite structures, and openings are formed in the frame body corresponding to the gaps, so that part of ions can penetrate through the gaps and the openings to penetrate through the Faraday.
In the structure for controlling the injection angle of the ion implanter in the vertical direction, the initial installation position of the faraday is the position where each grid-shaped graphite structure is in the horizontal state.
In the structure for controlling the implantation angle of the ion implanter in the vertical direction, before the wafer is placed in the process reaction chamber, the faraday measures the implantation angle of the ion implanter in the vertical direction.
In the structure for controlling the implantation angle of the ion implanter in the vertical direction, when the faraday measures the implantation angle of the ion implanter in the vertical direction, the faraday is rotated clockwise by α degrees, and when the ion implanter injects ions into the faraday, the faraday is rotated counterclockwise by 2 α degrees;
wherein the implantation angle of the ion implanter in the vertical direction is the angle of the grid-shaped graphite structure in the vertical direction when the ion current detected by the Faraday is minimum, and the angle is more than 5 degrees and less than α and less than 15 degrees.
The above structure for controlling the implantation angle of the ion implanter in the vertical direction is α =10 °
The above control structure of the vertical direction implantation angle of the ion implanter, wherein the faraday further comprises a motor, and the motor drives the faraday to rotate.
The control structure of the injection angle of the ion implanter in the vertical direction is characterized in that the Faraday is detachably connected with the process reaction cavity.
The control structure of the vertical direction implantation angle of the ion implanter is described, wherein the control structure further comprises an ion baffle arranged on one side of the Faraday to absorb the ions when the ions pass through the gap.
The control structure of the injection angle of the ion implanter in the vertical direction is described, wherein the ion implanter is a medium beam ion implanter.
The control structure of the injection angle of the ion implanter in the vertical direction is characterized in that the frame body is made of metal.
The invention has the following advantages or beneficial effects:
the invention discloses a control structure of an injection angle of an ion implanter in the vertical direction, wherein a Faraday comprising a plurality of grid-shaped graphite structures is rotatably arranged at the tail end of a process reaction cavity of the ion implanter, gaps are respectively arranged between every two adjacent grid-shaped graphite structures, and an opening is arranged on a frame body corresponding to the gaps so that partial ions can pass through the Faraday through the gaps and the openings, so that when the injection angle of the ion implanter in the vertical direction is measured, the injection angle of the ion implanter in the vertical direction can be obtained according to the rotating angle of the Faraday and the current, further, the injection angle of the ion implanter in the vertical direction can be effectively controlled, and the yield of products is improved.
Drawings
The invention and its features, aspects and advantages will become more apparent from reading the following detailed description of non-limiting embodiments with reference to the accompanying drawings. Like reference symbols in the various drawings indicate like elements. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention.
Figure 1 is a schematic diagram of a control structure of an ion implanter for controlling an implantation angle in a vertical direction during initial faraday installation in an embodiment of the invention;
fig. 2 is a schematic view of a control structure of an ion implanter for controlling an implantation angle in a vertical direction after faraday rotation by a certain angle in an embodiment of the present disclosure;
FIG. 3 is a schematic representation of ion current detected by a Faraday as a function of angle of Faraday rotation;
fig. 4 is a schematic diagram showing a comparison of the injection angle of the beam ion implanter in the vertical direction before and after the management and control structure of the present invention is adopted.
Detailed Description
The invention will be further described with reference to the following drawings and specific examples, which are not intended to limit the invention thereto.
As shown in fig. 1 and fig. 2, the present embodiment relates to a control structure for an implantation angle of an ion implanter in a vertical direction, wherein the implantation angle of the ion implanter in the vertical direction is an included angle between ions implanted by the ion implanter and a horizontal line; preferably, the ion implanter is a medium beam ion implanter; specifically, the control structure comprises a Faraday 1; the Faraday 1 is rotatably arranged at the tail end of a process reaction cavity of an ion implanter, and the Faraday 1 comprises a frame body 11 provided with an accommodating space and a plurality of grid-shaped graphite structures 12 which are arranged in the accommodating space and are parallel to each other; gaps are formed between every two adjacent grid-shaped graphite structures 12, and openings are formed in the frame body 11 corresponding to the gaps, so that partial ions can pass through the Faraday 1 through the gaps and the openings.
In a preferred embodiment of the present invention, as shown in fig. 1, the initial installation position of the faraday 1 is a position in which each grid-like graphite structure 12 is in a horizontal state.
In a preferred embodiment of the present invention, before a wafer is placed in a process reaction chamber, the faraday 1 measures an implantation angle of the middle beam ion implanter in the vertical beam direction, so that the implantation angle of the middle beam ion implanter in the vertical direction can be adjusted before the ion implantation process is performed on the wafer, so as to perform a precise ion implantation process on the wafer subsequently.
In a preferred embodiment of the present invention, as shown in figure 2, when faraday 1 measures the angle of implant in the vertical direction of the medium beam ion implanter (i.e. when the medium beam ion implanter is ready for measurement but has not yet implanted ions), faraday 1 is first rotated clockwise by 10 ° (the position in which faraday 1 is now referred to as the first rotated position, as shown in figure 2), when the ion implanter of middle beam current injects ions into Faraday 1, then Faraday 1 is rotated counterclockwise by 20 degrees (the position of Faraday 1 at this time is called a second rotation position), in the process that the faraday 1 rotates anticlockwise from the first position to the second rotation position, the angle of the grid-shaped graphite structure 12 in the vertical direction (i.e. the included angle between the grid-shaped graphite structure 12 and the horizontal line) when the ion current detected by the faraday 1 is the injection angle of the medium beam current ion implanter in the vertical direction.
In the embodiment of the present invention, a schematic diagram of a relationship between an ion current detected by a faraday and an angle of rotation of the faraday 1 is shown in fig. 3 (where X is the ion current detected by the faraday 1, and Y is the angle of rotation of the faraday 1), that is, when the faraday 1 is located at a position such that an injection angle in a vertical direction of the grid-shaped graphite structure 12 is parallel to an injection angle in a vertical direction of the medium beam ion implanter during counterclockwise rotation of the faraday 1, at this time, the beam ions passing through a gap between the grid-shaped graphite structures 12 are the largest, so that the current of the ions detected by the faraday 1 is the smallest, and at this time, an included angle between the grid-shaped graphite structure 12 of the faraday 1 and a horizontal line (or referred to as an angle in the vertical direction of the grid-shaped graphite structure 12) is the injection angle in the vertical direction of; the injection angle of the beam ion implanter in the vertical direction may be an upward bending angle or a downward bending angle, specifically, if the current of the ions detected by faraday 1 is the minimum when the faraday rotates counterclockwise by an angle smaller than 10 ° (e.g., 6 °), the injection angle of the beam ion implanter in the vertical direction is the downward bending angle, and the downward bending angle is 10 ° -6 ° =4 °, which is the angle of the faraday grating ink structure in the vertical direction; if the current of the ions detected by faraday 1 is the smallest, for example 16 °, when faraday 1 is rotated counterclockwise by an angle greater than 10 °, the implantation angle of the beam ion implanter in the vertical direction is an upward bending angle, and the upward bending angle is 20 ° -16 ° =4 °.
In a preferred embodiment of the invention, the faraday 1 further comprises a motor, which rotates the faraday 1; of course, the faraday 1 may comprise other structures, which are not essential to the improvement of the present invention, and therefore, will not be described in detail.
In a preferred embodiment of the invention, the connection of the faraday 1 to the process chamber is a detachable connection.
In a preferred embodiment of the present invention, the control structure further includes an ion baffle 2 disposed on one side of the faraday 1, so as to absorb ions when the ions pass through the gap, thereby avoiding ion contamination.
In a preferred embodiment of the present invention, the frame 11 is made of metal.
As can be seen from fig. 4 (where the Y axis is the implantation angle of the beam ion implanter in the vertical direction, and the X axis represents the number of experimental data), compared with the conventional art, after the management and control structure of the present invention is adopted, the implantation angle of the beam ion implanter in the vertical direction is effectively managed and controlled (in the figure, a is an area without the management and control structure of the present invention, and B is an area with the management and control structure of the present invention).
Those skilled in the art will appreciate that variations may be implemented by those skilled in the art in combination with the prior art and the above-described embodiments, and will not be described herein in detail. Such variations do not affect the essence of the present invention and are not described herein.
The above description is of the preferred embodiment of the invention. It is to be understood that the invention is not limited to the particular embodiments described above, in that devices and structures not described in detail are understood to be implemented in a manner common in the art; those skilled in the art can make many possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, without affecting the spirit of the invention, using the methods and techniques disclosed above, without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (6)
1. A control structure for an implantation angle of an ion implanter in a vertical direction is characterized by comprising a Faraday;
the Faraday is rotatably arranged at the tail end of a process reaction cavity of the ion implanter and comprises a frame body provided with an accommodating space and a plurality of grid-shaped graphite structures which are arranged in the accommodating space in parallel;
gaps are formed between every two adjacent grid-shaped graphite structures, and openings are formed in the frame body corresponding to the gaps, so that partial ions can pass through the Faraday through the gaps and the openings;
the control structure further comprises an ion baffle arranged on one side of the Faraday to absorb the ions when the ions pass through the gap;
the initial installation position of the Faraday is the position of each grid-shaped graphite structure in a horizontal state;
before a wafer is placed in the process reaction cavity, the Faraday measures the implantation angle of the ion implanter in the vertical direction;
when the Faraday measures the implantation angle of the ion implanter in the vertical direction, the Faraday is rotated clockwise by α degrees, and when the ion implanter implants ions into the Faraday, the Faraday is rotated counterclockwise by 2 α degrees;
the implantation angle of the ion implanter in the vertical direction is the angle of the grid-shaped graphite structure in the vertical direction when the ion current detected by the Faraday is minimum, and the angle is more than 5 degrees and less than α and less than 15 degrees;
the implantation angle is calculated according to the following formula:
A＝α-θ,θ≤α；
A＝2α-θ，α＜θ≤2α；
wherein,
a is used to represent the implantation angle;
θ is used to represent the angle at which the faraday detects the minimum ionic current;
when theta is not less than α, the injection angle is a downward bending angle;
when α < theta 2 α, the implantation angle is an upward bend angle.
2. The structure of claim 1, wherein α -10 ° is included.
3. The structure of claim 1, wherein the faraday further comprises a motor that rotates the faraday.
4. The structure of claim 1, wherein the faraday is removably attached to the process chamber.
5. The structure of claim 1, wherein the ion implanter is a medium beam ion implanter.
6. The structure of claim 1, wherein the frame is made of metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610889586.0A CN106298415B (en) | 2016-10-12 | 2016-10-12 | A kind of governance structure of ion implantation apparatus vertical direction implant angle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610889586.0A CN106298415B (en) | 2016-10-12 | 2016-10-12 | A kind of governance structure of ion implantation apparatus vertical direction implant angle |
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| Publication Number | Publication Date |
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| CN106298415A CN106298415A (en) | 2017-01-04 |
| CN106298415B true CN106298415B (en) | 2019-07-26 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108931808B (en) * | 2017-05-26 | 2020-11-06 | 北京中科信电子装备有限公司 | Improved ion beam vertical angle measuring method |
| CN109581470A (en) * | 2018-11-29 | 2019-04-05 | 德淮半导体有限公司 | Device and method for ion beam measurement |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6494998B1 (en) * | 2000-08-30 | 2002-12-17 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element |
| CN101421815A (en) * | 2005-12-21 | 2009-04-29 | 艾克塞利斯科技公司 | Employing is used for the ion beam angle measurement system and method for the varied angle slot arrays of ion implant systems |
| CN103794448A (en) * | 2013-11-08 | 2014-05-14 | 北京中科信电子装备有限公司 | Device for measuring angle in vertical direction |
| CN204230207U (en) * | 2014-10-10 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | Ion implantation angle measurement mechanism and ion implant systems |
-
2016
- 2016-10-12 CN CN201610889586.0A patent/CN106298415B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6494998B1 (en) * | 2000-08-30 | 2002-12-17 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element |
| CN101421815A (en) * | 2005-12-21 | 2009-04-29 | 艾克塞利斯科技公司 | Employing is used for the ion beam angle measurement system and method for the varied angle slot arrays of ion implant systems |
| CN103794448A (en) * | 2013-11-08 | 2014-05-14 | 北京中科信电子装备有限公司 | Device for measuring angle in vertical direction |
| CN204230207U (en) * | 2014-10-10 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | Ion implantation angle measurement mechanism and ion implant systems |
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| CN106298415A (en) | 2017-01-04 |
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