CN106292815B - Low-Dropout Regulator and Output Buffer Including LDO - Google Patents
Low-Dropout Regulator and Output Buffer Including LDO Download PDFInfo
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Abstract
一种低压降稳压器,包含电气连接至一第一直流电压源的一第一输入端、电气连接至一第二直流电压源的一第二输入端及一输出端。该第二直流电压源的电压值大于该第一直流电压源的电压值。该低压降稳压器另包含一放大单元、一转导单元、一电流复制单元及第一至第三电阻。该低压降稳压器于输出端产生的一直流输出电压的电压值实质等于该第二直流电压源的电压值减去该第一直流电压源的电压值。
A low-dropout voltage regulator comprises a first input terminal electrically connected to a first DC voltage source, a second input terminal electrically connected to a second DC voltage source, and an output terminal. The voltage value of the second DC voltage source is greater than the voltage value of the first DC voltage source. The low-dropout voltage regulator further comprises an amplification unit, a transduction unit, a current replication unit, and first to third resistors. The voltage value of a DC output voltage generated at the output terminal of the low-dropout voltage regulator is substantially equal to the voltage value of the second DC voltage source minus the voltage value of the first DC voltage source.
Description
技术领域technical field
本发明关于一种低压降稳压器和包含低压降稳压器的输出缓冲器。The present invention relates to a low dropout voltage regulator and an output buffer including the low dropout voltage regulator.
背景技术Background technique
低压降稳压器(Low Drop-Out Regulator,LDO Regulator)由于拥有低噪声、体积小的特性,再加上转换效能的提升,近年来已成为低功率的电源管理集成电路的主流。低压降稳压器广泛使用于由电池供应电源的可携式系统和通信相关的电子产品中,借以提供稳定的输出电压给负载使用。LDO Regulator (Low Drop-Out Regulator, LDO Regulator) has become the mainstream of low-power power management integrated circuits in recent years due to its low noise, small size, and the improvement of conversion efficiency. Low-dropout voltage regulators are widely used in portable systems powered by batteries and communication-related electronic products to provide a stable output voltage for the load.
图1显示现有技术的一低压降稳压器10的电路图。参考图1,该低压降稳压器10包含一能隙(bandgap)电压产生电路101、一误差放大器102、一输出晶体管103、电阻R1和R2以及一输出电容C1。FIG. 1 shows a circuit diagram of a prior art LDO regulator 10 . Referring to FIG. 1 , the low dropout regulator 10 includes a bandgap voltage generating circuit 101 , an error amplifier 102 , an output transistor 103 , resistors R1 and R2 , and an output capacitor C1 .
该输出晶体管103的源极和漏极分别连接至该低压降稳压器10的输入端和输出端。该电阻R1和该电阻R2形成一分压电路,以提供比例于输出电压VOUT的回授电压VFB至该误差放大器102的正输入端。该误差放大器102用以放大由该能隙电压产生电路101所提供至该误差放大器102的负输入端的一参考电压VREF和该回授电压VFB的差值,借以产生一输出电压VD至该输出晶体管103的栅极。当输出电压VOUT产生变化时,该误差放大器102借由检测该回授电压VFB与该参考电压VREF的差值,会适当地调整输出电压VD以改变该功率晶体管103的源极-栅极间电压差,借以提供足够的输出电流至负载RL,以稳定输出电压VOUT。The source and drain of the output transistor 103 are respectively connected to the input terminal and the output terminal of the low dropout voltage regulator 10 . The resistor R1 and the resistor R2 form a voltage divider circuit to provide a feedback voltage VFB proportional to the output voltage VOUT to the positive input terminal of the error amplifier 102 . The error amplifier 102 is used to amplify the difference between a reference voltage VREF and the feedback voltage VFB provided by the bandgap voltage generating circuit 101 to the negative input terminal of the error amplifier 102, so as to generate an output voltage VD to the output transistor 103 grid. When the output voltage VOUT changes, the error amplifier 102 will properly adjust the output voltage VD to change the source-gate voltage of the power transistor 103 by detecting the difference between the feedback voltage VFB and the reference voltage VREF difference, so as to provide enough output current to the load RL to stabilize the output voltage VOUT.
在现有技术中,负载RL连接于该低压降稳压器10的输出端与一接地端之间。故该低压降稳压器10借由该功率晶体管103可由直流电压源VCC提供足够的拉(source)电流至负载RL。然而,受限于其组态,该低压降稳压器10仅能提供很小的灌(sink)电流至负载RL。In the prior art, the load RL is connected between the output terminal of the low dropout voltage regulator 10 and a ground terminal. Therefore, the low dropout voltage regulator 10 can provide sufficient source current to the load RL from the DC voltage source VCC through the power transistor 103 . However, limited by its configuration, the LDO regulator 10 can only provide a small sink current to the load RL.
发明内容Contents of the invention
本发明的目的之一在于提供一种低压降稳压器,以提供灌(sink)电流至负载端。One of the objectives of the present invention is to provide a low dropout voltage regulator for providing sink current to a load terminal.
依据本发明一实施例,该低压降稳压器包含电气连接至一第一直流电压源的一第一输入端、电气连接至一第二直流电压源的一第二输入端及用以产生一直流输出电压的一输出端。该低压降稳压器另包含一放大单元、一转导单元、一电流复制单元及第一至第三电阻。该放大单元用于接收一参考电压与一回授电压以产生一直流输出电压至该输出端。该转导单元电气连接至该第一输入端,该转导单元用于根据该参考电压以产生一第一电流。该第一电阻用于接收该第一电流以产生该参考电压。该电流复制单元电气连接至该第二输入端,该电流复制单元用于根据该回授电压以产生一第二电流和一第三电流。该第二电阻用于接收该第二电流以产生该回授电压。该第三电阻电气连接至该电流复制单元和该输出端之间,该第三电阻用于接收该第三电流以产生该直流输出电压。该第二直流电压源的电压值大于该第一直流电压源的电压值。According to an embodiment of the present invention, the low-dropout voltage regulator includes a first input terminal electrically connected to a first DC voltage source, a second input terminal electrically connected to a second DC voltage source, and used to generate constant An output terminal that flows the output voltage. The low dropout regulator further includes an amplifying unit, a transconducting unit, a current copying unit and first to third resistors. The amplifying unit is used for receiving a reference voltage and a feedback voltage to generate a DC output voltage to the output terminal. The transconducting unit is electrically connected to the first input end, and the transconducting unit is used to generate a first current according to the reference voltage. The first resistor is used to receive the first current to generate the reference voltage. The current replication unit is electrically connected to the second input end, and the current replication unit is used to generate a second current and a third current according to the feedback voltage. The second resistor is used for receiving the second current to generate the feedback voltage. The third resistor is electrically connected between the current replication unit and the output terminal, and the third resistor is used for receiving the third current to generate the DC output voltage. The voltage value of the second DC voltage source is greater than the voltage value of the first DC voltage source.
附图说明Description of drawings
图1显示现有技术的一低压降稳压器的电路图。FIG. 1 shows a circuit diagram of a prior art LDO regulator.
图2显示结合本发明一实施例的低压降稳压器的电路图。FIG. 2 shows a circuit diagram of a low dropout voltage regulator incorporating an embodiment of the present invention.
图3显示结合本发明一实施例的低压降稳压器的电路示意图Figure 3 shows a schematic circuit diagram of a low dropout voltage regulator incorporating an embodiment of the present invention
图4显示结合本发明一实施例的输出缓冲器的方块示意图。FIG. 4 shows a block diagram of an output buffer incorporating an embodiment of the present invention.
符号说明Symbol Description
100 低压降稳压器100 Low Dropout Voltage Regulator
101 能隙电压产生电路101 Bandgap Voltage Generation Circuit
102 误差放大器102 Error amplifier
103 输出晶体管103 output transistor
200 低压降稳压器200 Low Dropout Voltage Regulator
22 放大单元22 amplifier unit
224 运算放大器224 operational amplifier
24 转导单元24 transduction units
26 电流复制单元26 current replica unit
400 输出缓冲器400 output buffer
42 输出级42 output stage
44 电压电平转换器44 voltage level shifter
46 电压电平转换器46 Voltage Level Shifter
C1 输出电容C1 output capacitance
M1~M6 晶体管M1~M6 Transistors
MN,MP,MX 功率晶体管MN, MP, MX power transistors
R1~R6 电阻R1~R6 resistance
具体实施方式Detailed ways
图2显示结合本发明一实施例的低压降稳压器200的方块示意图。该低压降稳压器200包括一第一输入端以电气连接至一直流电压源VCC、一第二输入端以电气连接一直流电压源VH和一输出端以提供一直流输出电压VOUT。该低压降稳压器20另包括一放大单元22、一转导单元24、一电流复制单元26、一电阻R1、一电阻R2以及一电阻R3。该放大单元22用于接收一参考电压VREF与一回授电压FB,借以产生该直流输出电压VOUT至该输出端。该转导单元24电气连接至该直流电压源VCC,其用于根据该参考电压VREF以产生一电流I1。该电阻R1用于接收该电流I1以产生该参考电压VREF。FIG. 2 shows a block diagram of a low dropout voltage regulator 200 incorporating an embodiment of the present invention. The LDO 200 includes a first input terminal electrically connected to a DC voltage source VCC, a second input terminal electrically connected to a DC voltage source VH, and an output terminal for providing a DC output voltage VOUT. The low dropout voltage regulator 20 further includes an amplifying unit 22 , a transconducting unit 24 , a current replicating unit 26 , a resistor R1 , a resistor R2 and a resistor R3 . The amplifying unit 22 is used for receiving a reference voltage VREF and a feedback voltage FB, so as to generate the DC output voltage VOUT to the output terminal. The transduction unit 24 is electrically connected to the DC voltage source VCC for generating a current I1 according to the reference voltage VREF. The resistor R1 is used to receive the current I1 to generate the reference voltage VREF.
该电流复制单元26电气连接至该直流电压源VH,其用于根据该回授电压FB以产生一电流I2和一电流I3。该电阻R2用于接收该电流I2以产生该回授电压FB。该电阻R3电气连接至该电流复制单元26和该放大单元22之间。该电阻R3用于接收该电流I3以产生该直流输出电压VOUT。The current replication unit 26 is electrically connected to the DC voltage source VH for generating a current I2 and a current I3 according to the feedback voltage FB. The resistor R2 is used to receive the current I2 to generate the feedback voltage FB. The resistor R3 is electrically connected between the current replication unit 26 and the amplification unit 22 . The resistor R3 is used to receive the current I3 to generate the DC output voltage VOUT.
图3显示结合本发明一实施例的低压降稳压器20的电路示意图。参考图3,该放大单元22包括一运算放大器224和一功率晶体管MX。该功率晶体管MX的漏极电气连接至该低压降稳压器20的输出端。该运算放大器224的正输入端用于接收该参考电压VREF,而负输入端用于接收该回授电压。该运算放大器224放大该参考电压VREF和该回授电压FB的电压差值后会在其输出端产生一输出信号至该功率晶体管MX的一栅极,借以驱动该功率晶体管MX。FIG. 3 shows a schematic circuit diagram of an LDO regulator 20 according to an embodiment of the present invention. Referring to FIG. 3 , the amplifying unit 22 includes an operational amplifier 224 and a power transistor MX. The drain of the power transistor MX is electrically connected to the output terminal of the low dropout voltage regulator 20 . The positive input terminal of the operational amplifier 224 is used to receive the reference voltage VREF, and the negative input terminal is used to receive the feedback voltage. After the operational amplifier 224 amplifies the voltage difference between the reference voltage VREF and the feedback voltage FB, an output signal is generated at its output end to a gate of the power transistor MX to drive the power transistor MX.
如图3所示,该转导单元24包括一电阻R4以及串联连接的晶体管M1和M2。该电阻R4电气连接至该直流电压源VCC。该晶体管M1的源极电气连接至该电阻R4,而栅极用以接收该参考电压VREF。该晶体管M2的源极电气连接至该晶体管M1的漏极,其栅极用以接收一偏压电压VB2,且其漏极连接至该运算放大器224的该正输入端。As shown in FIG. 3 , the transduction unit 24 includes a resistor R4 and transistors M1 and M2 connected in series. The resistor R4 is electrically connected to the DC voltage source VCC. The source of the transistor M1 is electrically connected to the resistor R4, and the gate is used to receive the reference voltage VREF. The source of the transistor M2 is electrically connected to the drain of the transistor M1 , its gate is used to receive a bias voltage VB2 , and its drain is connected to the positive input terminal of the operational amplifier 224 .
如图3所示,该电流复制单元26包括一电阻R5、一电阻R6、串联连接的晶体管M3和M4以及串联连接的晶体管M5和M6。该电阻R5电气连接至该直流电压源VH。该晶体管M3的源极电气连接至该电阻R5。该晶体管M4的源极电气连接至该晶体管M3的漏极,栅极用以接收一偏压电压VB1,且其漏极连接至该运算放大器224的该负输入端。该电阻R6电气连接至该直流电压源VH。该晶体管M5的源极电气连接至该电阻R6,而栅极电气连接至该晶体管M3的栅极。该晶体管M6的源极电气连接至该晶体管M5的漏极,其栅极用以接收该偏压电压VB1,且其漏极电气连接至该晶体管M3的栅极和该电阻R3。As shown in FIG. 3 , the current replication unit 26 includes a resistor R5 , a resistor R6 , transistors M3 and M4 connected in series, and transistors M5 and M6 connected in series. The resistor R5 is electrically connected to the DC voltage source VH. The source of the transistor M3 is electrically connected to the resistor R5. The source of the transistor M4 is electrically connected to the drain of the transistor M3 , the gate is used to receive a bias voltage VB1 , and the drain is connected to the negative input terminal of the operational amplifier 224 . The resistor R6 is electrically connected to the DC voltage source VH. The source of the transistor M5 is electrically connected to the resistor R6, and the gate is electrically connected to the gate of the transistor M3. The source of the transistor M6 is electrically connected to the drain of the transistor M5 , its gate is used to receive the bias voltage VB1 , and its drain is electrically connected to the gate of the transistor M3 and the resistor R3 .
为了使本领域的普通技术人员可以通过本实施范例的教导实施本发明,以下参考图3说明本发明的低压降稳压器200的运作方法。如图3所示,由于流入该运算放大器224的输入电流实质接近于零,电流I1所流路径的元件总压降可表示为:In order to enable those skilled in the art to implement the present invention through the teaching of this embodiment example, the operation method of the LDO voltage regulator 200 of the present invention will be described below with reference to FIG. 3 . As shown in FIG. 3, since the input current flowing into the operational amplifier 224 is substantially close to zero, the total voltage drop of the components in the path where the current I1 flows can be expressed as:
VCC-I1×(R4+R1)-∣VSG(M1)∣=0 (1)VCC-I1×(R4+R1)-∣VSG(M1)∣=0 (1)
其中,∣VSG(M1)∣为该晶体管M1的源极-栅极间电压差。Wherein, |VSG(M1)| is the voltage difference between the source and the gate of the transistor M1.
参照图3,该放大单元22、该转导单元24以及该电流复制单元26构成一负回授回路,使得该运算放大器224的正输入端电压VREF实质上相同于该运算放大器224的负输入端电压FB。故当电阻R1和电阻R2的阻值选择相同时,电流I2会实质上相同于电流I1。Referring to FIG. 3, the amplifying unit 22, the transconducting unit 24 and the current duplication unit 26 form a negative feedback loop, so that the positive input terminal voltage VREF of the operational amplifier 224 is substantially the same as the negative input terminal of the operational amplifier 224. Voltage FB. Therefore, when the resistance values of the resistor R1 and the resistor R2 are selected to be the same, the current I2 will be substantially the same as the current I1.
在电流复制单元26中,若电阻R5和电阻R6的阻值选择相同时,且晶体管M3的尺寸与晶体管M5的尺寸相同,则由于这些PMOS晶体管M3及M5的栅极彼此连接,流过PMOS晶体管M3的电流I2会实质上相同于流过PMOS晶体管M5的电流I3。在本发明一实施例中,这些PMOS晶体管M4及M6的尺寸相同,且其栅极均接收一偏压电压VB1。该偏压电压VB1的设计是使这些PMOS晶体管M4及M6工作在饱和区,以进一步加强电流I2和电流I3的匹配度。In the current replication unit 26, if the resistance values of the resistor R5 and the resistor R6 are selected to be the same, and the size of the transistor M3 is the same as that of the transistor M5, since the gates of these PMOS transistors M3 and M5 are connected to each other, the current flows through the PMOS transistor The current I2 of M3 is substantially the same as the current I3 flowing through the PMOS transistor M5. In an embodiment of the present invention, the sizes of the PMOS transistors M4 and M6 are the same, and their gates both receive a bias voltage VB1 . The design of the bias voltage VB1 is to make the PMOS transistors M4 and M6 work in the saturation region, so as to further strengthen the matching degree between the current I2 and the current I3.
因此,借由阻值和晶体管尺寸的选择,流经该转导单元24的电流I1以及流经该电流复制单元26的电流I2和电流I3会实质上相同。电流I3所流路径的元件总压降可表示为:Therefore, the current I1 flowing through the transconducting unit 24 and the currents I2 and I3 flowing through the current replicating unit 26 are substantially the same through the selection of the resistance value and the size of the transistor. The total voltage drop of the components in the current I3 flow path can be expressed as:
VH-I3×(R6+R3)-∣VSG(M5)∣=VOUT (2)VH-I3×(R6+R3)-∣VSG(M5)∣=VOUT (2)
其中,∣VSG(M5)∣为该晶体管M5的源极-栅极间电压差。Wherein, |VSG(M5)| is the voltage difference between the source and the gate of the transistor M5.
由于电流I3与电流I1实质上相同,且晶体管M5的尺寸与晶体管M1的尺寸设计为相同,故∣VSG(M5)∣实质上相同于∣VSG(M1)∣。因此,方程式(2)可置换为:Since the current I3 is substantially the same as the current I1, and the size of the transistor M5 is designed to be the same as that of the transistor M1, therefore |VSG(M5)| is substantially the same as |VSG(M1)|. Therefore, equation (2) can be replaced by:
VH-I1×(R6+R3)-∣VSG(M1)∣=VOUT (3)VH-I1×(R6+R3)-∣VSG(M1)∣=VOUT (3)
当电阻R6和电阻R4的阻值选择相同,且电阻R3和电阻R1的阻值选择相同时,方程式(3)可再置换为:When the resistance values of resistor R6 and resistor R4 are selected to be the same, and the resistance values of resistor R3 and resistor R1 are selected to be the same, equation (3) can be replaced as:
VH-I1×(R4+R1)-∣VSG(M1)∣=VOUT (4)VH-I1×(R4+R1)-∣VSG(M1)∣=VOUT (4)
将方程式(1)套入方程式(4)后可重新整理为:After putting equation (1) into equation (4), it can be rearranged as:
VH-VCC=VOUT (5)VH-VCC=VOUT (5)
依方程式(5)可得该直流输出电压VOUT的电压值为该直流电压源VH与该直流电压源VCC的电压差值。According to equation (5), the voltage value of the DC output voltage VOUT can be obtained as the voltage difference between the DC voltage source VH and the DC voltage source VCC.
在应用上,本发明的低压降稳压器200可作为推动输出级的电压电平转换器(level shifter)的偏压电路。图4显示结合本发明一实施例的输出缓冲器(outputbuffer)400的方块示意图。参考图4,该输出缓冲器400包含一输出级42、电压电平转换器44和46以及该低压降稳压器200。该输出级42包含一PMOS晶体管MP和一NMOS晶体管MN。该PMOS晶体管MP的源极电性连接至直流电压源VH,而该NMOS晶体管MN的源极电性连接至接地端。In application, the low dropout voltage regulator 200 of the present invention can be used as a bias circuit for driving a voltage level shifter of an output stage. FIG. 4 shows a block diagram of an output buffer (outputbuffer) 400 according to an embodiment of the present invention. Referring to FIG. 4 , the output buffer 400 includes an output stage 42 , voltage level shifters 44 and 46 and the LDO regulator 200 . The output stage 42 includes a PMOS transistor MP and an NMOS transistor MN. The source of the PMOS transistor MP is electrically connected to the DC voltage source VH, and the source of the NMOS transistor MN is electrically connected to the ground terminal.
该电压电平转换器44用于接收电压振幅为VCC至0V的输入信号IN,借以驱动NMOS晶体管MN。该电压电平转换器46用于接收电压振幅为VH至VH-VCC的输入信号IN,借以驱动该PMOS晶体管MP。在本例中该直流电压源VH的电压电平高于该直流电压源VCC的电压电平。例如,该直流电压源VH的电压电平可为12V,而该直流电压源VCC的电压电平可为5V。The voltage level shifter 44 is used for receiving the input signal IN with a voltage amplitude from VCC to 0V, so as to drive the NMOS transistor MN. The voltage level shifter 46 is used for receiving the input signal IN with a voltage amplitude from VH to VH-VCC, so as to drive the PMOS transistor MP. In this example, the voltage level of the DC voltage source VH is higher than the voltage level of the DC voltage source VCC. For example, the voltage level of the DC voltage source VH can be 12V, and the voltage level of the DC voltage source VCC can be 5V.
在运作上,当输入信号IN为逻辑0(在本例中为0V)时,该电压电平转换器44输出逻辑1信号(在本例中为5V),使得该NMOS晶体管MN导通。同时,该电压电平转换器46输出逻辑1信号(在本例中为12V),使得该PMOS晶体管MP截止。因此,该输出缓冲器400可输出一逻辑0信号。In operation, when the input signal IN is logic 0 (0V in this example), the voltage level shifter 44 outputs a logic 1 signal (5V in this example), so that the NMOS transistor MN is turned on. At the same time, the voltage level shifter 46 outputs a logic 1 signal (12V in this example), so that the PMOS transistor MP is turned off. Therefore, the output buffer 400 can output a logic 0 signal.
反之,当输入信号IN为逻辑1(在本例中为5V)时,该电压电平转换器44输出逻辑0信号(在本例中为0V),使得该NMOS晶体管MN截止。同时,该电压电平转换器46输出逻辑0信号(在本例中为7V),使得该PMOS晶体管MP导通。因此,该输出缓冲器400可输出一逻辑1信号,但电压电平已由5V转换为12V。On the contrary, when the input signal IN is logic 1 (5V in this example), the voltage level shifter 44 outputs a logic 0 signal (0V in this example), so that the NMOS transistor MN is turned off. At the same time, the voltage level shifter 46 outputs a logic 0 signal (7V in this example), so that the PMOS transistor MP is turned on. Therefore, the output buffer 400 can output a logic 1 signal, but the voltage level has been converted from 5V to 12V.
当输入信号IN由逻辑0信号转换为逻辑1信号时,该电压电平转换器46须将其输出信号V1由振幅VH下拉至VH-VCC。因此,该低压降稳压器200可借由其内的NMOS晶体管MX(参照图3)提供灌(sink)电流IS,借以下拉V1的电压电平。该低压降稳压器200由于该放大单元22、该转导单元24以及该电流复制单元26形成的负回授回路,能有效控制输出电压VOUT为该直流电压源VH与该直流电压源VCC的电压差值。When the input signal IN is converted from a logic 0 signal to a logic 1 signal, the voltage level shifter 46 has to pull down the output signal V1 from the amplitude VH to VH-VCC. Therefore, the LDO voltage regulator 200 can provide a sink current IS through the NMOS transistor MX therein (refer to FIG. 3 ), so as to pull down the voltage level of V1. Due to the negative feedback loop formed by the amplifying unit 22, the transconducting unit 24 and the current replicating unit 26, the low dropout voltage regulator 200 can effectively control the output voltage VOUT to be the relationship between the DC voltage source VH and the DC voltage source VCC. voltage difference.
本发明的技术内容及技术特点已公开如上,然而本领域的普通技术人员仍可能基于本发明的教示及公开而作种种不背离本发明精神的替换及修饰。因此,本发明的保护范围应不限于实施例所公开的内容,而应包括各种不背离本发明的替换及修饰,并为所附权利要求所涵盖。The technical content and technical features of the present invention have been disclosed above, but those skilled in the art may still make various replacements and modifications based on the teaching and disclosure of the present invention without departing from the spirit of the present invention. Therefore, the protection scope of the present invention should not be limited to the content disclosed in the embodiments, but should include various replacements and modifications that do not depart from the present invention, and are covered by the appended claims.
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