CN106282961A - A kind of preparation method of cutter - Google Patents
A kind of preparation method of cutter Download PDFInfo
- Publication number
- CN106282961A CN106282961A CN201610716152.0A CN201610716152A CN106282961A CN 106282961 A CN106282961 A CN 106282961A CN 201610716152 A CN201610716152 A CN 201610716152A CN 106282961 A CN106282961 A CN 106282961A
- Authority
- CN
- China
- Prior art keywords
- cutter
- preparation
- reagent
- hard alloy
- alloy substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000956 alloy Substances 0.000 claims abstract description 30
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 30
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 19
- 239000010432 diamond Substances 0.000 claims abstract description 19
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 238000005261 decarburization Methods 0.000 claims abstract description 13
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 12
- 239000010941 cobalt Substances 0.000 claims abstract description 12
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007888 film coating Substances 0.000 claims abstract description 7
- 238000009501 film coating Methods 0.000 claims abstract description 7
- 239000003153 chemical reaction reagent Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical group S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- 238000004062 sedimentation Methods 0.000 claims description 5
- 238000003672 processing method Methods 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 238000005520 cutting process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
This application discloses the preparation method of a kind of cutter, including: (1), hard alloy substrate is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduce matrix surface cobalt element content;(2), to hard alloy substrate carry out microwave decarburization reduction treatment, make the WC of matrix surface be changed into W;(3), diamond thin is formed in cemented carbide substrate surfaces.The present invention passes through pretreatment and microwave decarburization reduction treatment, can improve the adhesive strength between diamond film coating layer and matrix, improve the cutting ability of cutter.
Description
Technical field
The application relates to the preparation method of a kind of cutter.
Background technology
The effect of the surface preparation of hard alloy includes, suppression cobalt is to diamond thin forming core and the unfavorable shadow of growth
Ringing, reduce graphite or the generation of amorphous carbon, increase the contact area between matrix and reactant gas source, lives in the surface improving hard alloy
Property, reduce the lattice mismatch between thin film and matrix and the difference of thermal coefficient of expansion, promote the nucleation and growth of diamond, improve
Diamond thin and the bond strength of carbide blade, improve the quality of diamond thin.
Summary of the invention
It is an object of the invention to provide the preparation method of a kind of cutter, to overcome deficiency of the prior art.
For achieving the above object, the present invention provides following technical scheme:
The embodiment of the present application discloses the preparation method of a kind of cutter, including:
(1), hard alloy substrate is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduce matrix
Cobalt surface constituent content;
(2), to hard alloy substrate carry out microwave decarburization reduction treatment, make the WC of matrix surface be changed into W;
(3), diamond thin is formed in cemented carbide substrate surfaces.
Preferably, in the preparation method of above-mentioned cutter, described hard alloy substrate is cutter blade.
Preferably, in the preparation method of above-mentioned cutter, in described step (1), preprocess method includes: hard alloy
Matrix is with supersonic vibration mode etch WC phase 20~40 minutes in the first reagent, and described first reagent is K3(Fe(CN))6With
The mixed solution of KOH;Hard alloy substrate after etch acid etching in the second reagent goes to cobalt 8~10 seconds, and described second reagent is
Sulfuric acid solution.
Preferably, in the preparation method of above-mentioned cutter, in described first reagent, K in mass ratio3(Fe(CN))6:
KOH:H2O=1:(1~1.5): (6~8).
Preferably, in the preparation method of above-mentioned cutter, in described second reagent, H by volume2SO4: H2O2=3:
(5~7).
Preferably, in the preparation method of above-mentioned cutter, in described step (2), in microwave decarburization method of reduction treatment,
Reduction treatment time 10~15 minutes;Microwave power 400~550W, gas pressure 1~1.5kPa.
Preferably, in the preparation method of above-mentioned cutter, in described step (3), hard alloy substrate is put into bias
Strengthen depositing diamond film coating in hot-wire device, sedimentation time 1~1.5 hours, hot-wire temperature 800~1000 DEG C, bias
Electric current density 0.1~0.15A/cm2。
Compared with prior art, it is an advantage of the current invention that: the present invention passes through pretreatment and microwave decarburization reduction treatment,
The adhesive strength between diamond film coating layer and matrix can be improved, improve the cutting ability of cutter.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present application or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Some embodiments described in application, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 show the SEM photograph of diamond pattern in the specific embodiment of the invention 1.
Detailed description of the invention
The present invention is described further by the following example: according to following embodiment, the present invention be may be better understood.
But, as it will be easily appreciated by one skilled in the art that concrete material ratio, process conditions and result thereof described by embodiment are only used
In the explanation present invention, and should be also without limitation on the present invention described in detail in claims.
Embodiment 1
Hard alloy substrate cutter blade is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduces base
Surface cobalt element content, preprocess method includes: hard alloy substrate in the first reagent with supersonic vibration mode etch WC
30 minutes mutually, the first reagent was K3(Fe(CN))6Mixed solution with KOH;Hard alloy substrate after etch is in the second reagent
Acid etching goes to cobalt 8~10 seconds, and the second reagent is sulfuric acid solution, in the first reagent, and K in mass ratio3(Fe(CN))6: KOH:H2O=1:
1:7, in the second reagent, H by volume2SO4: H2O2=3:5.
Hard alloy substrate carrying out microwave decarburization reduction treatment, makes the WC of matrix surface be changed into W, microwave decarburization is reduced
In processing method, 15 minutes reduction treatment time;Microwave power 400W, gas pressure 1kPa.
Form diamond thin in cemented carbide substrate surfaces, hard alloy substrate is put into bias and strengthens in hot-wire device
Depositing diamond film coating, sedimentation time 1 hour, hot-wire temperature 800 DEG C, bias current density 0.1A/cm2。
Fig. 1 show the SEM photograph of diamond pattern in the specific embodiment of the invention 1.
Embodiment 2
Hard alloy substrate cutter blade is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduces base
Surface cobalt element content, preprocess method includes: hard alloy substrate in the first reagent with supersonic vibration mode etch WC
20 minutes mutually, the first reagent was K3(Fe(CN))6Mixed solution with KOH;Hard alloy substrate after etch is in the second reagent
Acid etching removes cobalt 8 seconds, and the second reagent is sulfuric acid solution, in the first reagent, and K in mass ratio3(Fe(CN))6: KOH:H2O=1:1.2:
6, in the second reagent, H by volume2SO4: H2O2=3:5.
Hard alloy substrate carrying out microwave decarburization reduction treatment, makes the WC of matrix surface be changed into W, microwave decarburization is reduced
In processing method, 15 minutes reduction treatment time;Microwave power 550W, gas pressure 1.3kPa.
Form diamond thin in cemented carbide substrate surfaces, hard alloy substrate is put into bias and strengthens in hot-wire device
Depositing diamond film coating, sedimentation time 1.5 hours, hot-wire temperature 1000 DEG C, bias current density 0.15A/cm2。
Embodiment 3
Hard alloy substrate cutter blade is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduces base
Surface cobalt element content, preprocess method includes: hard alloy substrate in the first reagent with supersonic vibration mode etch WC
40 minutes mutually, the first reagent was K3(Fe(CN))6Mixed solution with KOH;Hard alloy substrate after etch is in the second reagent
Acid etching goes to cobalt 8~10 seconds, and the second reagent is sulfuric acid solution, in the first reagent, and K in mass ratio3(Fe(CN))6: KOH:H2O=1:
1.5:6, in the second reagent, H by volume2SO4: H2O2=3:7.
Hard alloy substrate carrying out microwave decarburization reduction treatment, makes the WC of matrix surface be changed into W, microwave decarburization is reduced
In processing method, 15 minutes reduction treatment time;Microwave power 400W, gas pressure 1.5kPa.
Form diamond thin in cemented carbide substrate surfaces, hard alloy substrate is put into bias and strengthens in hot-wire device
Depositing diamond film coating, sedimentation time 1 hour, hot-wire temperature 800 DEG C, bias current density 0.1A/cm2。
Here, also, it should be noted in order to avoid having obscured the present invention because of unnecessary details, the most only
Show and according to the closely-related structure of the solution of the present invention and/or process step, and eliminate little with relation of the present invention
Other details.
Finally, in addition it is also necessary to explanation, term " includes ", " comprising " or its any other variant are intended to non-exclusive
Comprising of property, so that include that the process of a series of key element, method, article or equipment not only include those key elements, and
Also include other key elements being not expressly set out, or also include intrinsic for this process, method, article or equipment
Key element.
Claims (7)
1. the preparation method of a cutter, it is characterised in that including:
(1), hard alloy substrate is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduce matrix surface
Cobalt element content;
(2), to hard alloy substrate carry out microwave decarburization reduction treatment, make the WC of matrix surface be changed into W;
(3), diamond thin is formed in cemented carbide substrate surfaces.
The preparation method of cutter the most according to claim 1, it is characterised in that: described hard alloy substrate is cutter blade.
The preparation method of cutter the most according to claim 1, it is characterised in that: in described step (1), preprocess method bag
Include: hard alloy substrate is with supersonic vibration mode etch WC phase 20~40 minutes in the first reagent, and described first reagent is K3
(Fe(CN))6Mixed solution with KOH;Hard alloy substrate after etch acid etching in the second reagent goes to cobalt 8~10 seconds, described
Second reagent is sulfuric acid solution.
The preparation method of cutter the most according to claim 3, it is characterised in that: in described first reagent, K in mass ratio3
(Fe(CN))6: KOH:H2O=1:(1~1.5): (6~8).
The preparation method of cutter the most according to claim 3, it is characterised in that: in described second reagent, by volume
H2SO4: H2O2=3:(5~7).
The preparation method of cutter the most according to claim 1, it is characterised in that: in described step (2), microwave decarburization is reduced
In processing method, reduction treatment time 10~15 minutes;Microwave power 400~550W, gas pressure 1~1.5kPa.
The preparation method of cutter the most according to claim 1, it is characterised in that: in described step (3), by carbide matrix
Body is put into bias and is strengthened depositing diamond film coating in hot-wire device, sedimentation time 1~1.5 hours, hot-wire temperature 800~
1000 DEG C, bias current density 0.1~0.15A/cm2。
Priority Applications (1)
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CN201610716152.0A CN106282961A (en) | 2016-08-24 | 2016-08-24 | A kind of preparation method of cutter |
Applications Claiming Priority (1)
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CN201610716152.0A CN106282961A (en) | 2016-08-24 | 2016-08-24 | A kind of preparation method of cutter |
Publications (1)
Publication Number | Publication Date |
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CN106282961A true CN106282961A (en) | 2017-01-04 |
Family
ID=57615999
Family Applications (1)
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CN201610716152.0A Pending CN106282961A (en) | 2016-08-24 | 2016-08-24 | A kind of preparation method of cutter |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5700518A (en) * | 1996-04-26 | 1997-12-23 | Korea Institute Of Science And Technology | Fabrication method for diamond-coated cemented carbide cutting tool |
CN1818131A (en) * | 2006-03-09 | 2006-08-16 | 上海交通大学 | Chemical gas-phase deposition for producing diamond thin filmon cutter with complex-formation |
CN105624641A (en) * | 2016-01-26 | 2016-06-01 | 上海交通大学 | Preparation method of diamond-coated mechanical seal ring |
CN105695948A (en) * | 2016-01-25 | 2016-06-22 | 华东理工大学 | Batch preprocessing method for mechanical seal rings with diamond coatings |
-
2016
- 2016-08-24 CN CN201610716152.0A patent/CN106282961A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5700518A (en) * | 1996-04-26 | 1997-12-23 | Korea Institute Of Science And Technology | Fabrication method for diamond-coated cemented carbide cutting tool |
CN1818131A (en) * | 2006-03-09 | 2006-08-16 | 上海交通大学 | Chemical gas-phase deposition for producing diamond thin filmon cutter with complex-formation |
CN105695948A (en) * | 2016-01-25 | 2016-06-22 | 华东理工大学 | Batch preprocessing method for mechanical seal rings with diamond coatings |
CN105624641A (en) * | 2016-01-26 | 2016-06-01 | 上海交通大学 | Preparation method of diamond-coated mechanical seal ring |
Non-Patent Citations (4)
Title |
---|
ZHENQING XU ET AL.: "Effects of surface pretreatments on the deposition of adherent diamond coatings on cemented tungsten carbide substrates", 《DIAMOND AND RELATED MATERIALS》 * |
刘沙等: "金刚石涂层用低钴硬质合金基体表面二步浸蚀法的研究", 《稀有金属材料与工程》 * |
刘沙等: "金刚石涂层用高钴硬质合金基体表面二步浸蚀法的研究", 《粉末冶金技术》 * |
沈彬等: "高性能复杂形状金刚石薄膜涂层刀具的制备和切削性能研究", 《中国机械工程》 * |
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Application publication date: 20170104 |