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CN106282961A - A kind of preparation method of cutter - Google Patents

A kind of preparation method of cutter Download PDF

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Publication number
CN106282961A
CN106282961A CN201610716152.0A CN201610716152A CN106282961A CN 106282961 A CN106282961 A CN 106282961A CN 201610716152 A CN201610716152 A CN 201610716152A CN 106282961 A CN106282961 A CN 106282961A
Authority
CN
China
Prior art keywords
cutter
preparation
reagent
hard alloy
alloy substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610716152.0A
Other languages
Chinese (zh)
Inventor
惠勇
许燕
惠小桃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhangjiagang Hesheng Import & Export Co Ltd
Original Assignee
Zhangjiagang Hesheng Import & Export Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhangjiagang Hesheng Import & Export Co Ltd filed Critical Zhangjiagang Hesheng Import & Export Co Ltd
Priority to CN201610716152.0A priority Critical patent/CN106282961A/en
Publication of CN106282961A publication Critical patent/CN106282961A/en
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0227Pretreatment of the material to be coated by cleaning or etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0209Pretreatment of the material to be coated by heating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/271Diamond only using hot filaments

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

This application discloses the preparation method of a kind of cutter, including: (1), hard alloy substrate is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduce matrix surface cobalt element content;(2), to hard alloy substrate carry out microwave decarburization reduction treatment, make the WC of matrix surface be changed into W;(3), diamond thin is formed in cemented carbide substrate surfaces.The present invention passes through pretreatment and microwave decarburization reduction treatment, can improve the adhesive strength between diamond film coating layer and matrix, improve the cutting ability of cutter.

Description

A kind of preparation method of cutter
Technical field
The application relates to the preparation method of a kind of cutter.
Background technology
The effect of the surface preparation of hard alloy includes, suppression cobalt is to diamond thin forming core and the unfavorable shadow of growth Ringing, reduce graphite or the generation of amorphous carbon, increase the contact area between matrix and reactant gas source, lives in the surface improving hard alloy Property, reduce the lattice mismatch between thin film and matrix and the difference of thermal coefficient of expansion, promote the nucleation and growth of diamond, improve Diamond thin and the bond strength of carbide blade, improve the quality of diamond thin.
Summary of the invention
It is an object of the invention to provide the preparation method of a kind of cutter, to overcome deficiency of the prior art.
For achieving the above object, the present invention provides following technical scheme:
The embodiment of the present application discloses the preparation method of a kind of cutter, including:
(1), hard alloy substrate is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduce matrix Cobalt surface constituent content;
(2), to hard alloy substrate carry out microwave decarburization reduction treatment, make the WC of matrix surface be changed into W;
(3), diamond thin is formed in cemented carbide substrate surfaces.
Preferably, in the preparation method of above-mentioned cutter, described hard alloy substrate is cutter blade.
Preferably, in the preparation method of above-mentioned cutter, in described step (1), preprocess method includes: hard alloy Matrix is with supersonic vibration mode etch WC phase 20~40 minutes in the first reagent, and described first reagent is K3(Fe(CN))6With The mixed solution of KOH;Hard alloy substrate after etch acid etching in the second reagent goes to cobalt 8~10 seconds, and described second reagent is Sulfuric acid solution.
Preferably, in the preparation method of above-mentioned cutter, in described first reagent, K in mass ratio3(Fe(CN))6: KOH:H2O=1:(1~1.5): (6~8).
Preferably, in the preparation method of above-mentioned cutter, in described second reagent, H by volume2SO4: H2O2=3: (5~7).
Preferably, in the preparation method of above-mentioned cutter, in described step (2), in microwave decarburization method of reduction treatment, Reduction treatment time 10~15 minutes;Microwave power 400~550W, gas pressure 1~1.5kPa.
Preferably, in the preparation method of above-mentioned cutter, in described step (3), hard alloy substrate is put into bias Strengthen depositing diamond film coating in hot-wire device, sedimentation time 1~1.5 hours, hot-wire temperature 800~1000 DEG C, bias Electric current density 0.1~0.15A/cm2
Compared with prior art, it is an advantage of the current invention that: the present invention passes through pretreatment and microwave decarburization reduction treatment, The adhesive strength between diamond film coating layer and matrix can be improved, improve the cutting ability of cutter.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present application or technical scheme of the prior art, below will be to embodiment or existing In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this Some embodiments described in application, for those of ordinary skill in the art, on the premise of not paying creative work, Other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 show the SEM photograph of diamond pattern in the specific embodiment of the invention 1.
Detailed description of the invention
The present invention is described further by the following example: according to following embodiment, the present invention be may be better understood. But, as it will be easily appreciated by one skilled in the art that concrete material ratio, process conditions and result thereof described by embodiment are only used In the explanation present invention, and should be also without limitation on the present invention described in detail in claims.
Embodiment 1
Hard alloy substrate cutter blade is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduces base Surface cobalt element content, preprocess method includes: hard alloy substrate in the first reagent with supersonic vibration mode etch WC 30 minutes mutually, the first reagent was K3(Fe(CN))6Mixed solution with KOH;Hard alloy substrate after etch is in the second reagent Acid etching goes to cobalt 8~10 seconds, and the second reagent is sulfuric acid solution, in the first reagent, and K in mass ratio3(Fe(CN))6: KOH:H2O=1: 1:7, in the second reagent, H by volume2SO4: H2O2=3:5.
Hard alloy substrate carrying out microwave decarburization reduction treatment, makes the WC of matrix surface be changed into W, microwave decarburization is reduced In processing method, 15 minutes reduction treatment time;Microwave power 400W, gas pressure 1kPa.
Form diamond thin in cemented carbide substrate surfaces, hard alloy substrate is put into bias and strengthens in hot-wire device Depositing diamond film coating, sedimentation time 1 hour, hot-wire temperature 800 DEG C, bias current density 0.1A/cm2
Fig. 1 show the SEM photograph of diamond pattern in the specific embodiment of the invention 1.
Embodiment 2
Hard alloy substrate cutter blade is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduces base Surface cobalt element content, preprocess method includes: hard alloy substrate in the first reagent with supersonic vibration mode etch WC 20 minutes mutually, the first reagent was K3(Fe(CN))6Mixed solution with KOH;Hard alloy substrate after etch is in the second reagent Acid etching removes cobalt 8 seconds, and the second reagent is sulfuric acid solution, in the first reagent, and K in mass ratio3(Fe(CN))6: KOH:H2O=1:1.2: 6, in the second reagent, H by volume2SO4: H2O2=3:5.
Hard alloy substrate carrying out microwave decarburization reduction treatment, makes the WC of matrix surface be changed into W, microwave decarburization is reduced In processing method, 15 minutes reduction treatment time;Microwave power 550W, gas pressure 1.3kPa.
Form diamond thin in cemented carbide substrate surfaces, hard alloy substrate is put into bias and strengthens in hot-wire device Depositing diamond film coating, sedimentation time 1.5 hours, hot-wire temperature 1000 DEG C, bias current density 0.15A/cm2
Embodiment 3
Hard alloy substrate cutter blade is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduces base Surface cobalt element content, preprocess method includes: hard alloy substrate in the first reagent with supersonic vibration mode etch WC 40 minutes mutually, the first reagent was K3(Fe(CN))6Mixed solution with KOH;Hard alloy substrate after etch is in the second reagent Acid etching goes to cobalt 8~10 seconds, and the second reagent is sulfuric acid solution, in the first reagent, and K in mass ratio3(Fe(CN))6: KOH:H2O=1: 1.5:6, in the second reagent, H by volume2SO4: H2O2=3:7.
Hard alloy substrate carrying out microwave decarburization reduction treatment, makes the WC of matrix surface be changed into W, microwave decarburization is reduced In processing method, 15 minutes reduction treatment time;Microwave power 400W, gas pressure 1.5kPa.
Form diamond thin in cemented carbide substrate surfaces, hard alloy substrate is put into bias and strengthens in hot-wire device Depositing diamond film coating, sedimentation time 1 hour, hot-wire temperature 800 DEG C, bias current density 0.1A/cm2
Here, also, it should be noted in order to avoid having obscured the present invention because of unnecessary details, the most only Show and according to the closely-related structure of the solution of the present invention and/or process step, and eliminate little with relation of the present invention Other details.
Finally, in addition it is also necessary to explanation, term " includes ", " comprising " or its any other variant are intended to non-exclusive Comprising of property, so that include that the process of a series of key element, method, article or equipment not only include those key elements, and Also include other key elements being not expressly set out, or also include intrinsic for this process, method, article or equipment Key element.

Claims (7)

1. the preparation method of a cutter, it is characterised in that including:
(1), hard alloy substrate is carried out pretreatment, so that cemented carbide substrate surfaces to be roughened, and reduce matrix surface Cobalt element content;
(2), to hard alloy substrate carry out microwave decarburization reduction treatment, make the WC of matrix surface be changed into W;
(3), diamond thin is formed in cemented carbide substrate surfaces.
The preparation method of cutter the most according to claim 1, it is characterised in that: described hard alloy substrate is cutter blade.
The preparation method of cutter the most according to claim 1, it is characterised in that: in described step (1), preprocess method bag Include: hard alloy substrate is with supersonic vibration mode etch WC phase 20~40 minutes in the first reagent, and described first reagent is K3 (Fe(CN))6Mixed solution with KOH;Hard alloy substrate after etch acid etching in the second reagent goes to cobalt 8~10 seconds, described Second reagent is sulfuric acid solution.
The preparation method of cutter the most according to claim 3, it is characterised in that: in described first reagent, K in mass ratio3 (Fe(CN))6: KOH:H2O=1:(1~1.5): (6~8).
The preparation method of cutter the most according to claim 3, it is characterised in that: in described second reagent, by volume H2SO4: H2O2=3:(5~7).
The preparation method of cutter the most according to claim 1, it is characterised in that: in described step (2), microwave decarburization is reduced In processing method, reduction treatment time 10~15 minutes;Microwave power 400~550W, gas pressure 1~1.5kPa.
The preparation method of cutter the most according to claim 1, it is characterised in that: in described step (3), by carbide matrix Body is put into bias and is strengthened depositing diamond film coating in hot-wire device, sedimentation time 1~1.5 hours, hot-wire temperature 800~ 1000 DEG C, bias current density 0.1~0.15A/cm2
CN201610716152.0A 2016-08-24 2016-08-24 A kind of preparation method of cutter Pending CN106282961A (en)

Priority Applications (1)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700518A (en) * 1996-04-26 1997-12-23 Korea Institute Of Science And Technology Fabrication method for diamond-coated cemented carbide cutting tool
CN1818131A (en) * 2006-03-09 2006-08-16 上海交通大学 Chemical gas-phase deposition for producing diamond thin filmon cutter with complex-formation
CN105624641A (en) * 2016-01-26 2016-06-01 上海交通大学 Preparation method of diamond-coated mechanical seal ring
CN105695948A (en) * 2016-01-25 2016-06-22 华东理工大学 Batch preprocessing method for mechanical seal rings with diamond coatings

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700518A (en) * 1996-04-26 1997-12-23 Korea Institute Of Science And Technology Fabrication method for diamond-coated cemented carbide cutting tool
CN1818131A (en) * 2006-03-09 2006-08-16 上海交通大学 Chemical gas-phase deposition for producing diamond thin filmon cutter with complex-formation
CN105695948A (en) * 2016-01-25 2016-06-22 华东理工大学 Batch preprocessing method for mechanical seal rings with diamond coatings
CN105624641A (en) * 2016-01-26 2016-06-01 上海交通大学 Preparation method of diamond-coated mechanical seal ring

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ZHENQING XU ET AL.: "Effects of surface pretreatments on the deposition of adherent diamond coatings on cemented tungsten carbide substrates", 《DIAMOND AND RELATED MATERIALS》 *
刘沙等: "金刚石涂层用低钴硬质合金基体表面二步浸蚀法的研究", 《稀有金属材料与工程》 *
刘沙等: "金刚石涂层用高钴硬质合金基体表面二步浸蚀法的研究", 《粉末冶金技术》 *
沈彬等: "高性能复杂形状金刚石薄膜涂层刀具的制备和切削性能研究", 《中国机械工程》 *

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Application publication date: 20170104