CN106282955A - A kind of method preparing functional graphic films on flexible substrates thin film - Google Patents
A kind of method preparing functional graphic films on flexible substrates thin film Download PDFInfo
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- CN106282955A CN106282955A CN201610797588.7A CN201610797588A CN106282955A CN 106282955 A CN106282955 A CN 106282955A CN 201610797588 A CN201610797588 A CN 201610797588A CN 106282955 A CN106282955 A CN 106282955A
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- 239000010408 film Substances 0.000 title claims abstract description 82
- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- 230000007935 neutral effect Effects 0.000 claims abstract description 14
- 238000000605 extraction Methods 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 239000004033 plastic Substances 0.000 claims description 24
- 229920003023 plastic Polymers 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 229910052756 noble gas Inorganic materials 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052754 neon Inorganic materials 0.000 claims description 4
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 150000002835 noble gases Chemical class 0.000 claims description 3
- -1 polyethylene Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 238000000427 thin-film deposition Methods 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- VYQRBKCKQCRYEE-UHFFFAOYSA-N ctk1a7239 Chemical compound C12=CC=CC=C2N2CC=CC3=NC=CC1=C32 VYQRBKCKQCRYEE-UHFFFAOYSA-N 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005594 polymer fiber Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of method preparing functional graphic films on flexible substrates thin film, including: flexible substrates thin film is fixed on the rotational workpieces platform in vacuum storehouse；On described flexible substrates thin film, preparation comprises the photoresist of functional figure film shape；Metal targets is fixed on the target platform in vacuum storehouse；Extracting vacuum；By the plasma produced by ion source through extraction, bunchy, accelerate, neutralize and form neutral ion bundle；Use neutral ion bundle bombardment metal targets, the metallic atom sputtered out from metal targets to flexible substrates thin film deposition thus forms functional graphic films on the part that described flexible substrates thin film exposes, the energy of described ion beam is 200～1000eV, and bombardment time is 60～480s；Open vacuum storehouse, take out flexible substrates thin film.The method of the present invention is capable of under low temperature environment on flexible substrates thin film preparing the functional graphic films of the nanoscale even Subnano-class that density is high, adhesive force is strong.
Description
Technical field
The present invention relates to coating process, more particularly, it relates to one prepares functional figure on flexible substrates thin film
The method of thin film.
Background technology
Flexible material is primarily referred to as organic polymer material, typically has good pliability, the spy such as flexible, collapsible
Property.And flexible substrates thin film refers to thin film that wind, that use, normally used flexible substrates as plated film base material
Thin film is plastic sheeting.At flexible base material plating metal on surface thin film, the characteristics such as substrate is soft, flexible both can be retained,
Can also substantially change its surface characteristic, give its various new functions, such as, can be used for antistatic, shielding electromagnetic wave, fiber
Sensor, and the various high-tech such as thermal isolation film, conducting film and anti-reflection film and high performance functional film, be also widely used for
The various aspects such as high-performing car pad pasting, touch screen, plasm TV and radiation-proof cloth.
The common method of metal-coated membrane includes several on a flexible substrate: 1. electroless plating: not by fabric form and size
Limiting, coating is uniform, and equipment investment amount is little, and production efficiency is high, controls easier；But belong to wet method plated film, produce containing heavy metal from
Sub-processing pollution is unfavorable for that industrialization produces continuously, and bath stability, the ruggedness of fabric and water-wash resistance etc. also need to make bigger
Improve, and chemical deposit and surface grafting polymerization are difficult to the deposition of complicated ingredient material.2. vacuum evaporation: application
Extensively, equipment is fairly simple, processing ease, and the thin film purity made is high, quality is good, and thickness can more accurately control, rate of film build
Hurry up, efficiency high, the growth mechanism of thin film is more simple；But be difficult to obtain the thin film of crystalline texture, and film and substrate tack
Difference, process repeatability is the best, is not suitable for processing high-melting-point and the material of complicated ingredient, is unsuitable for the flexibility of many non-refractories
Substrate such as polymer fiber.3. magnetron sputtering: be widely used, can realize high speed extensive deposition and extensive consecutive production,
Micron order thickness, tack are good, consistency is high, save water power, and technological process is easy, without three-protection design, can meet combination
The performance requirement of layer product；But cost is of a relatively high, film-forming temperature is more than or equal to 300 DEG C.
Ion beam sputter depositing (Ion Bean Sputtering Deposition, IBSD) plated film, is by noble gas
It is ionized into plasma, through extraction, bunchy, accelerates, neutralize, form the ion beam of high energy and high speed, ion beam bombardment be placed in often
Target in temperature, fine vacuum, deposits to be formed in substrate thin film by the target atom sputtered.The feature of this method is: 1.
Good stability: deposition process is momentum conversion, without phase transformation, can eliminate internal stress and tension force；2. controllability, favorable reproducibility: can
Thin film growth, film microstructure, film texture and film lattice orientation is controlled with nanoscale；3. film-forming temperature is low: room temperature is even
Being film formation at low temp, substrate will not deform；4. clean thoroughly: when having assisting ion source, before plated film, substrate is carried out prerinse, energy
Improve thin film and the adhesive force of substrate；5. target particle energy is high: the pellicle film density of deposition is high, and (some film layer can be close
Target density), impurity is few, high with the adhesion of substrate；6. the suitability is wide: be suitable in addition to organic material and easy decomposing material
Numerous materials；For dry method plated film, without environmental problem；Film material ratio and target phase is can ensure that when preparing alloy firm
With；High-melting-point thin film and insulation film can be prepared；Being passed through oxygen by auxiliary can be with applying oxidn film.
But current ion beam sputter depositing plated film also cannot realize the flexible material plating of nanoscale even Subnano-class
Film.
Summary of the invention
In order to solve the problems referred to above, embodiment of the invention discloses that a kind of preparation functional diagram on flexible substrates thin film
The method of shape thin film, to realize under low temperature environment preparing on flexible substrates thin film density is high, adhesive force is strong nanoscale even
The functional graphic films of Subnano-class, and can be greatly improved the fineness of functional graphic films, adhesion, stability and
The combination properties such as controllability.
The invention discloses a kind of method preparing functional graphic films on flexible substrates thin film, including: flexible
Substrate film is fixed on the rotational workpieces platform in vacuum storehouse, and the thickness of described flexible substrates thin film is 0.1～0.5mm；Institute
State the photoresist that on flexible substrates thin film, preparation comprises functional figure film shape, thus the flexibility come out on photoresist
The part of substrate film is consistent with the shape of functional graphic films to be formed；Metal targets is fixed on the target in vacuum storehouse
On platform；Extracting vacuum；By the plasma produced by ion source through extraction, bunchy, accelerate, neutralize and form neutral ion bundle；Adopt
Bombard metal targets with neutral ion bundle, the metallic atom sputtered out from metal targets to described flexible substrates thin film deposition from
And described flexible substrates thin film expose part on form functional graphic films, the energy of described ion beam be 200～
1000eV, bombardment time is 60～480s；The thickness of functional graphic films is 0.1～5nm；Open vacuum storehouse, take out flexibility
Substrate film.The method of the present invention is capable of under low temperature environment preparing nanoscale even Subnano-class on flexible substrates thin film
Functional graphic films.
For one embodiment of the present of invention, the material of described metal targets includes copper, tungsten, tantalum, nickel, aluminum and silver.
For one embodiment of the present of invention, the method for extracting vacuum includes: first slightly take out with mechanical pump, thinner with molecular pump
Take out, until vacuum reaches and is maintained at 6 × 10-3Pa in overall process.
For one embodiment of the present of invention, the method producing plasma includes: solenoid produces high-frequency and high-voltage；Cloudy
Pole tungsten filament produces glow discharge；Being passed through noble gas, these noble gases ionize decomposition under high-frequency and high-voltage and produce plasma.
Specifically, noble gas can include helium, neon, argon, krypton or xenon.The method of formation ion beam may include that draws plasma
Go out, bunchy, accelerate, neutralize thus form ion beam.It is, for example possible to use porous screen by plasma draw and bunchy thus
Be formed as neutral ion bundle, it is possible to use ion beam is accelerated by accelerating grid, it is possible to use with emission of cathode electronics pair in immersion
Ion beam is neutralized formation neutral ion bundle.
For one embodiment of the present of invention, described flexible substrates thin film is plastic bag, can be that polyethylene is formed.
The invention provides a kind of method preparing functional graphic films on flexible substrates thin film, thin in flexible substrates
Prepare photoresist on film, with the to be formed shape preparing functional graphic films on this photoresist, at this time pass through ion
By metal atom sputtering and to deposit to the flexible substrates with functional figure film shape photoresist thin for bundle bombardment metal targets
On film.The present invention can directly determine functional graphic films to be formed by the shape of photoresist, size and precision
Shape, size and precision.The method that the present invention provides makes to prepare on flexible substrates thin film under low temperature environment density height, attachment
The functional graphic films of the nanoscale even Subnano-class that power is strong is possibly realized, and the fineness of functional graphic films,
The performances such as adhesion, stability and controllability all obtain bigger improvement.
Accompanying drawing explanation
By description to disclosure embodiment referring to the drawings, above-mentioned and other purposes of the disclosure, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 is the flow chart preparing metal trade mark according to one embodiment of the present of invention ion beam sputtering on plastic bag；
Fig. 2 is to prepare each device of metal trade mark on plastic bag according to one embodiment of the present of invention ion beam sputtering to show
It is intended to；
Each label is expressed as follows:
100-ion source；200-copper target；300-rotary target platform；400-rotational workpieces platform；500-plastic bag coating film area；
600-copper target sputtered atom；700-ion beam.
Detailed description of the invention
Hereinafter, will be described with reference to the accompanying drawings embodiment of the disclosure.However, it should be understood that these descriptions are the most exemplary
, and it is not intended to limit the scope of the present disclosure.Additionally, in the following description, eliminate the description to known features and technology, with
Avoid unnecessarily obscuring the concept of the disclosure.
Various structural representations according to disclosure embodiment shown in the drawings.These figures are not drawn to scale
, wherein in order to understand the purpose of expression, it is exaggerated some details, and some details may be eliminated.Shown in figure
Various regions, the shape of layer and the relative size between them, position relationship are only exemplary, are likely to be due to system in reality
Make tolerance or technical limitations and deviation, and those skilled in the art have difference according to actually required can additionally design
Shape, size, the regions/layers of relative position.
In the context of the disclosure, when one layer/element is referred to as positioned at another layer/element " on " time, this layer/element can
To be located immediately on this another layer/element, or intermediate layer/element between them, can be there is.If it addition, one towards
In one layer/element be positioned at another layer/element " on ", then when turn towards time, this layer/element may be located at this another layer/unit
Part D score.
According to embodiment disclosed by the invention, disclose one on flexible substrates thin film, prepare metal business's calibration method,
First on flexible substrates thin film, photoresist is prepared, with the shape of the metal trade mark that will prepare, i.e. photoetching on this photoresist
On glue with hollow out shape just consistent with the shape of trade mark, thus just the region wanting plated film is exposed, at this time passes through
High energy and high speed ion beam bombardment metal targets is by metal atom sputtering and deposits on flexible substrates thin film.In the present invention, light
The shape of photoresist, size and precision directly determine the shape of metallic film to be prepared, size and precision.Such as photoresist
If precision can reach nanoscale even Subnano-class, it is clear that finally prepd metallic film can also reach nanoscale very
To Subnano-class.The method that the present invention provides makes to prepare the even sub-nanometer of nanoscale under low temperature environment on flexible substrates thin film
The metallic film of level is possibly realized, and uses the fineness of metallic film prepared by the method for the present invention, adhesion, stability
Can be greatly improved with performances such as controllabilitys.Additionally, the technique that the present invention uses is simple, it is possible to realize volume production, significantly carry
High efficiency and minimizing production cost.
Below in conjunction with Fig. 1 and Fig. 2, the specific embodiment of the present invention is described in detail.
Current embodiment require that to be about on 0.254mm polyethylene (PE) soft plastic bag at thickness and prepare thickness about
The trade mark copper film of 1nm.For other embodiments of the present invention, it is also possible to do not deposit metal trade mark on plastic bag thin
Film, it is also possible to form metal function graphic films on other flexible material thin film, mould such as but not limited to cloth, hard
Material, organic metal thin film, inorganic metal thin film etc..The thickness of flexible substrates thin film can also be other numerical value, preferably 0.1～
0.5mm.Metal function graphic films to be formed can also be that other thickness, such as thickness are preferably 0.1～5nm.
As it is shown in figure 1, step S01 is first carried out, fixed plastics bag coating film area 500, and make on flexible substrates thin film
The standby photoresist comprising trade mark shape.Specifically, as in figure 2 it is shown, plastic bag coating film area 500 is fixed on rotational workpieces platform
Above 400, and in plastic bag coating film area 500, prepare photoresist (not shown in Fig. 2).Due on photoresist with will shape
The shape of metal trade mark become, then the part exposed by photoresist void region in plastic bag coating film area 500 the most just with
The shape of the metal trade mark that will be formed is identical.Certainly for being not required to part to be processed on plastic bag, it would however also be possible to employ some
Facility hides.
As shown in Figure 1 and Figure 2, then perform step S02, copper (Cu) target 200 is fixed on rotary target platform 300.For this
Other embodiments of invention, it would however also be possible to employ other metal targets, such as tungsten (W), nickel (Ni), aluminum (Al), tantalum (Ta) or silver
(Ag), the invention is not limited in this regard.This step well known within the skill of those ordinarily skilled, repeats no more here.
As it is shown in figure 1, then perform step S03, work stage is loaded vacuum storehouse, extracting vacuum.As in figure 2 it is shown, it is all
Device include plastic bag above, work stage 400, metal targets 200, target platform 300 and produce ion beam ion source 100
All should be placed in vacuum storehouse, prepare vacuum storehouse in the overall process of metallic film and keep vacuum higher than 6 × 10-3Pa.Formed
The way of vacuum may include steps of: first slightly takes out with mechanical pump, then takes out by molecular pump essence, makes vacuum storehouse vacuum reach
6.0×10-3More than Pa, and this vacuum, guarantee coating effects will be maintained in whole coating process.
As it is shown in figure 1, then perform step S04, produce plasma.Specifically, may include steps of: to vacuum
Ion source 100 insufflation gas in storehouse, such as in embodiments of the invention, gas can be noble gas, then opens high-tension electricity
Source so that the such as argon glow discharge of the noble gas in ion source 100 produces Ar+ plasma.So at other of the present invention
Embodiment can also use additive method produce plasma, and can also use other inert gas elements generations etc. from
Daughter, such as, can be Krypton (Kr), xenon (Xe), neon (Ne) or helium (He), and the present invention is without limitation.It is below
Produce a concrete exemplary method of ion beam, first by noble gas such as argon, Krypton, xenon, helium or neon etc.
Be passed through in vacuum environment, allow negative electrode tungsten filament issue radio at high-frequency and high-voltage and carry out glow discharge, then these noble gases can
Generation plasma is decomposed in ionization, and wherein high-frequency and high-voltage can be produced by solenoid.
As it is shown in figure 1, then perform step S05, plasma is formed as neutral ion bundle 700.Specifically, can be by
The Ar produced in step S04+Plasma through extractions, bunchy, accelerate, neutralize formed high energy and high speed ion beam 700.Can make
By plasma extraction bunchy thus form ion beam with porous screen, use accelerating grid that ion beam is accelerated, finally use
Ion beam is neutralized forms neutral ion bundle 700 with emission of cathode electronics by immersion.Copper for the embodiment of the present invention
Target, the accelerating potential of accelerating grid can be such as 1～1000V, the energy of high energy and high speed ion beam 700 can be 200～
1000eV, in other embodiments of the invention, if use be tungsten target, the accelerating potential of accelerating grid can be such as 1～
800V, the energy of high energy and high speed ion beam 700 can be 200～800eV.
As it is shown in figure 1, then perform step S06, neutral ion bundle 700 is used to bombard metal targets 200, from metal targets
The metallic atom 600 that 200 sputter out deposits thus in the part that coating film area 500 exposes to plastic bag coating film area 500
Form trade mark copper film.As in figure 2 it is shown, utilize high energy and high speed ion beam 700 to bombard copper target 200, copper target 200 copper sputtered out
Atom 600 deposits to being fixed on plastic bag coating film area 500 in work stage 400, band photoresist, and the ion beam bombardment time is big
It is about 60～480s, forms thickness and be about the trade mark copper film of 0.1～5nm.If needing to form thicker trade mark copper film, then may be used
To increase ion beam bombardment and the time of plated film；If needing to be formed relatively thin trade mark copper film, then can reduce ion beam and bang
Hit and the time of plated film.Due to the part (be not the most photo-etched glue hide part) exposed in plastic bag coating film area 500 just
Good identical with the trade mark copper film figure that will be formed, then can be by ion beam bombardment metal targets by the method for the present invention
Method prepares metal trade mark thin film on plastic bag.
Finally perform step step S07, open vacuum storehouse, take out plastic bag and clean photoresist.The method cleaned is such as
Can be directly use resist remover remove, ashing remove, wet-cleaning (being carried out for example with sulphuric acid, hydrogen peroxide etc.) or
Oxygen is utilized to carry out plasma etching.Those skilled in the art can be carried out according to practical situation.Photoresist has cleaned
Bi Hou, embodiments of the invention complete, and achieve metal trade mark plated film on plastic bag.
According to embodiments of the invention, application ion beam sputter depositing technology is prepared nanoscale even Asia on plastic bag and is received
The trade mark copper film of meter level, plastic bag is indeformable, and copper film patterns is fine, and adhesive force is strong, also will not even if firmly rubbing plastic bag copper film with the hands
Wrinkling, variable color, deformation, therefore the technology of the present invention is with a wide range of applications.
In the above description, the ins and outs such as the composition of each layer, etching are not described in detail.But
It will be appreciated by those skilled in the art that and can form the layer of required form, region etc. by various technological means.It addition, be
Formation same structure, those skilled in the art can be devised by method the most identical with process as described above.
Although it addition, respectively describing each embodiment above, but it is not intended that the measure in each embodiment can not be favourable
Be used in combination.
Embodiment the most of this disclosure is described.But, the purpose that these embodiments are merely to illustrate that, and
It is not intended to limit the scope of the present disclosure.The scope of the present disclosure is limited by claims and equivalent thereof.Without departing from these public affairs
The scope opened, those skilled in the art can make multiple replacement and amendment, and these substitute and amendment all should fall in the disclosure
Within the scope of.
Claims (9)
1. the method preparing functional graphic films on flexible substrates thin film, including:
Flexible substrates thin film is fixed on the rotational workpieces platform in vacuum storehouse, the thickness of described flexible substrates thin film be 0.1～
0.5mm；
On described flexible substrates thin film, preparation comprises the photoresist of functional figure film shape, thus exposes on photoresist
The part of the flexible substrates thin film come is consistent with the shape of functional graphic films to be formed；
Metal targets is fixed on the target platform in vacuum storehouse；
Extracting vacuum；
Produce plasma；
By described plasma through extraction, bunchy, accelerate, neutralize formation neutral ion bundle；
Using neutral ion bundle bombardment metal targets, the metallic atom sputtered out from metal targets is to described flexible substrates thin film
Depositing thus form functional graphic films in the part that described flexible substrates thin film exposes, the energy of described ion beam is
200～1000eV, bombardment time is 60～480s；The thickness of functional graphic films is 0.1～5nm；
Open vacuum storehouse, take out flexible substrates thin film.
Method the most according to claim 1, wherein, the material of described metal targets includes copper, tungsten, tantalum, nickel, aluminum or silver.
Method the most according to claim 1, wherein, the method for extracting vacuum includes: first slightly takes out with mechanical pump, then uses molecule
Pump is carefully taken out, until vacuum reaches and is maintained at 6 × 10 in overall process-3Pa。
Method the most according to claim 1, wherein, the side preparing functional graphic films according to claim 1
Method, the method producing plasma includes:
Solenoid produces high-frequency and high-voltage；
Negative electrode tungsten filament produces glow discharge；
Being passed through noble gas, these noble gases ionize decomposition under high-frequency and high-voltage and produce plasma.
Method the most according to claim 4, wherein, noble gas includes helium, neon, argon, krypton or xenon.
Method the most according to claim 5, wherein, the method forming neutral ion bundle includes: drawn by plasma, become
Restraint, accelerate, neutralize thus form neutral ion bundle.
Method the most according to claim 6, wherein, uses porous screen by plasma extraction bunchy thus to be formed as
Ion beam, uses accelerating grid to accelerate ion beam, uses in immersion and emission of cathode electronics is neutralized formation to ion beam
Neutral ion bundle.
8. according to the method one of claim 1 to 7 Suo Shu, wherein, described flexible substrates thin film is plastic bag.
Method the most according to claim 8, wherein, the material of described plastic bag includes polyethylene.
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| CN107993972A (en) * | 2017-11-13 | 2018-05-04 | 苏州科技大学 | A kind of flexible electronic functional material and preparation method thereof |
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