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CN106222752A - A kind of method preparing organic crystal thin film - Google Patents

A kind of method preparing organic crystal thin film Download PDF

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CN106222752A
CN106222752A CN201610752773.4A CN201610752773A CN106222752A CN 106222752 A CN106222752 A CN 106222752A CN 201610752773 A CN201610752773 A CN 201610752773A CN 106222752 A CN106222752 A CN 106222752A
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organic crystal
organic
ether
dimethylaminostyryl
acetate
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蔡斌
吴晨寅
田甜
叶天明
展鹏
胡彦茹
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University of Shanghai for Science and Technology
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    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/02Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
    • C30B7/06Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using non-aqueous solvents
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    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/355Non-linear optics characterised by the materials used
    • G02F1/3551Crystals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/355Non-linear optics characterised by the materials used
    • G02F1/361Organic materials
    • G02F1/3611Organic materials containing Nitrogen

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Abstract

本发明公开了一种有机晶体薄膜的制备方法,将有机晶体原料、修饰剂溶解在有机溶剂中并搅拌均匀,然后将混合溶液滴加到50~150摄氏度的基板上使溶剂蒸发,蒸发时间控制在3分钟以内,然后将该基板置于封闭的培养皿中,使其在良溶剂的饱和蒸气压的环境下,在‑30~50摄氏度培养1~30小时,有机晶体沿着二维方向生长,从而得到有机晶体薄膜。本方法包括在高温溶剂蒸发时晶体迅速析出过程,以及在饱和蒸气压下培养皿中发生的有机分子纳米颗粒通过毛细现象吸引后的自组装过程。晶体在与基板垂直的方向上生长受限,因此可以得到二维的有机晶体薄膜。有机晶体薄膜的大小随培养时间、基板材料的亲疏水性和培养温度的改变而改变。

The invention discloses a method for preparing an organic crystal thin film. Organic crystal raw materials and modifiers are dissolved in an organic solvent and stirred evenly, and then the mixed solution is dropped onto a substrate at 50-150 degrees Celsius to evaporate the solvent. The evaporation time is controlled. Within 3 minutes, then place the substrate in a closed petri dish, and incubate it at -30-50 degrees Celsius for 1-30 hours under the saturated vapor pressure of a good solvent, and the organic crystals grow along the two-dimensional direction , so as to obtain organic crystal thin films. The method includes the process of rapid precipitation of crystals when the high-temperature solvent evaporates, and the self-assembly process of organic molecular nanoparticles in a culture dish under saturated vapor pressure after being attracted by capillary phenomenon. The crystal growth is restricted in the direction perpendicular to the substrate, so two-dimensional organic crystal thin films can be obtained. The size of the organic crystal film changes with the culture time, the hydrophilicity and hydrophobicity of the substrate material and the culture temperature.

Description

一种制备有机晶体薄膜的方法A kind of method for preparing organic crystal film

技术领域technical field

本发明属于光电信息材料领域,涉及一种有机晶体,具体来说是一种制备有机晶体薄膜的方法。The invention belongs to the field of optoelectronic information materials, and relates to an organic crystal, in particular to a method for preparing an organic crystal thin film.

背景技术Background technique

非线性光学晶体材料可以用来进行激光频率转换,扩展激光的波长;用来调制激光的强度、相位;实现激光信号的全息存储、消除波前畴变的自泵浦相位共轭等等。所以非线性光学晶体是高新技术和现代军事技术中不可缺少的关键材料,各发达国家都将其放在优先位置,并作为一项重要战略措施列入各自的高技术发展计划中,给予高度重视和支持。Nonlinear optical crystal materials can be used to convert laser frequency and extend the wavelength of laser; to modulate the intensity and phase of laser; to realize holographic storage of laser signal, self-pump phase conjugation to eliminate wavefront domain change, etc. Therefore, nonlinear optical crystal is an indispensable key material in high-tech and modern military technology. All developed countries put it in a priority position, and include it in their high-tech development plan as an important strategic measure, and attach great importance to it. and support.

最近几年来越来越多的研究者开始研究有机晶体。郑美玲等通过对DAST有机纳晶进行研究,发现其具有电磁响应性、光波导特性和非线性光学特性等,可以作为性能良好的光电材料。他们利用树枝状分子制备有机纳晶,由于碳硅氧烷树枝状分子在晶体生长过程中的有效调整,成功得到DAST纳晶,同时也获取了控制DAST纳晶形状和大小的一种相对比较容易的方法。他们设计并合成了碳硅氧烷树枝状分子,研究不同代数的树枝状分子带来的不同尺寸效应,考察树枝状分子对有机材料的光学特性的影响。Nakanishi等报道了一种在磁场中固定各向异性并分散有机晶体的方法。他们将各向异性的DAST晶体分散在磁场中的萘中,并测试了DAST晶体的吸收波谱(最大值是555nm),推断各向异性的DAST晶体SHG效率可能会增强。In recent years, more and more researchers have begun to study organic crystals. Zheng Meiling and others have studied DAST organic nanocrystals and found that they have electromagnetic responsiveness, optical waveguide characteristics and nonlinear optical characteristics, and can be used as optoelectronic materials with good performance. They used dendrimers to prepare organic nanocrystals. Due to the effective adjustment of carbosiloxane dendrimers in the crystal growth process, they successfully obtained DAST nanocrystals, and also obtained a relatively easy way to control the shape and size of DAST nanocrystals. Methods. They designed and synthesized carbosiloxane dendrimers, studied the different size effects of dendrimers of different generations, and investigated the influence of dendrimers on the optical properties of organic materials. Nakanishi et al. reported a method to fix anisotropy and disperse organic crystals in a magnetic field. They dispersed anisotropic DAST crystals in naphthalene in a magnetic field, and tested the absorption spectrum of DAST crystals (the maximum value is 555nm), inferring that the SHG efficiency of anisotropic DAST crystals may be enhanced.

有机晶体的制备方法是晶体材料领域内的一个重要研究课题。近年来相继发展起来了几种不同的制备方法:(1)机械研磨法。利用这种方法可以获得纯金属、合金、金属间化合物及其它化合物等多种系列的晶体,并且有产量较大,成本低,工艺简单等优点。但是由于研磨过程中产生的杂质污染和氧化,很难得到洁净的晶体界面,对一些基础性研究工作不利。(2)非晶晶化法。这种方法的特点是工艺过程简便,成本低,产量大,晶粒度变化易控制,而且界面清洁致密,样品中无微孔隙。但其局限性在于它依赖于非晶态固体的形成。(3)沉积法。目前晶体制备的一个主要目标是获得大量的,大尺寸的晶体样品,样品界面清洁,无微孔隙。The preparation method of organic crystals is an important research topic in the field of crystal materials. In recent years, several different preparation methods have been developed successively: (1) Mechanical grinding method. Various series of crystals such as pure metals, alloys, intermetallic compounds and other compounds can be obtained by using this method, and it has the advantages of large output, low cost and simple process. However, due to impurity contamination and oxidation during the grinding process, it is difficult to obtain a clean crystal interface, which is not conducive to some basic research work. (2) Amorphous crystallization method. This method is characterized by simple process, low cost, large output, easy control of grain size change, clean and dense interface, and no microporosity in the sample. But its limitation is that it relies on the formation of amorphous solids. (3) Deposition method. A major goal of current crystal preparation is to obtain a large number of large-sized crystal samples with clean sample interfaces and no microporosity.

发明内容Contents of the invention

针对现有技术中的上述技术问题,本发明提供了一种制备有机晶体薄膜的方法,所述的这种制备有机晶体薄膜的方法要解决现有技术的方法制备的有机晶体缺陷多、尺寸可控性不强、成本高等技术问题。Aiming at the above-mentioned technical problems in the prior art, the present invention provides a method for preparing an organic crystal thin film. The method for preparing an organic crystal thin film should solve the problem that the organic crystal prepared by the method of the prior art has many defects and the size is variable. There are technical problems such as poor controllability and high cost.

本发明提供了一种制备有机晶体薄膜的方法,将有机晶体原料、修饰剂溶解在第一有机溶剂中,并搅拌均匀,所述的机晶体原料和修饰剂的质量比为1:0.1~10,然后将混合溶液滴加到50-150摄氏度的基板上进行蒸发,蒸发时间控制在3分钟以内,再将该基板置于甲醇的饱和蒸气压下的容器中,在-30~50摄氏度的温度下培养1~30小时,获得有机晶体薄膜。The invention provides a method for preparing an organic crystal thin film. The organic crystal raw material and the modifier are dissolved in a first organic solvent and stirred evenly. The mass ratio of the organic crystal raw material and the modifier is 1:0.1-10 , and then add the mixed solution dropwise to the substrate at 50-150 degrees Celsius for evaporation, the evaporation time is controlled within 3 minutes, and then the substrate is placed in a container under the saturated vapor pressure of methanol, at a temperature of -30 to 50 degrees Celsius Under culture for 1 to 30 hours, an organic crystal film is obtained.

进一步的,将该基板置于容器中后滴入第二种有机溶剂,所述的第二种有机溶剂为所述的有机晶体的良溶剂,根据相似相溶原理,依据所述的有机晶体的极性选择不同的第二种有机溶剂。在该溶剂的蒸汽氛围下,基板上的晶体自动缓慢自组,从而获得高品质的有机晶体薄膜。Further, after the substrate is placed in the container, the second organic solvent is dropped into the second organic solvent. The second organic solvent is a good solvent for the organic crystal. According to the principle of similar compatibility, according to the organic crystal Choose a second organic solvent with a different polarity. Under the vapor atmosphere of the solvent, the crystals on the substrate automatically and slowly self-assemble, thereby obtaining high-quality organic crystal thin films.

进一步的,所述的有机晶体原料为二甲氨基苯乙烯基甲基吡啶盐类物质,所述的二甲氨基苯乙烯基甲基吡啶盐类物质为4-(4-二甲氨基苯乙烯基)甲基吡啶对甲苯磺酸盐(DAST)、4-(4-二甲氨基苯乙烯基)甲基吡啶2, 4, 6-三甲基苯磺酸盐(DSTMS) 、4-(4-二甲氨基苯乙烯基)甲基吡啶萘磺酸盐(DSNS-1)、4-(4-二甲氨基苯乙烯基)甲基吡啶 对乙烯基苯磺酸盐(DSSS)、4-(4-二甲氨基苯乙烯基)甲基吡啶 2,4-二甲基苯磺酸盐、4-(4-二甲氨基苯乙烯基)甲基吡啶2-萘磺酸盐(DSNS-2)、4-(4-二甲氨基苯乙烯基)甲基吡啶对苯氨基苯磺酸(DSPAS)、4-(4-二甲氨基苯乙烯基)甲基吡啶 4-氨基萘磺酸(DSNAS)、4-(4-二甲氨基苯乙烯基)甲基吡啶 4-(4-二甲氨基苯基)偶氮甲基苯磺酸(DSMO)、或者4-(4-二甲氨基苯乙烯基)甲基吡啶对氯苯磺酸盐(DASC)。Further, the organic crystal raw material is dimethylaminostyryl picolinium salt, and the dimethylaminostyryl picolinium salt is 4-(4-dimethylaminostyryl ) methylpyridine p-toluenesulfonate (DAST), 4-(4-dimethylaminostyryl) methylpyridine 2,4,6-trimethylbenzenesulfonate (DSTMS), 4-(4- Dimethylaminostyryl)picoline naphthalene sulfonate (DSNS-1), 4-(4-dimethylaminostyryl)picoline p-vinylbenzenesulfonate (DSSS), 4-(4 -Dimethylaminostyryl)picoline 2,4-dimethylbenzenesulfonate, 4-(4-dimethylaminostyryl)picoline 2-naphthalenesulfonate (DSNS-2), 4-(4-dimethylaminostyryl)picoline 4-aminonaphthalenesulfonic acid (DSPAS), 4-(4-dimethylaminostyryl)picoline 4-aminonaphthalenesulfonic acid (DSNAS), 4-(4-dimethylaminostyryl)picoline 4-(4-dimethylaminophenyl)azomethylbenzenesulfonic acid (DSMO), or 4-(4-dimethylaminostyryl) Picoline p-chlorobenzenesulfonate (DASC).

进一步的,所述的第一有机溶剂为甲醇、乙醇、氯乙醇、正丙醇、异丙醇、1-丁醇、异丁醇、2-丁醇、戊醇、异戊醇、丙三醇、二丙酮醇、丙酮、丁酮、环已酮、甲基正丙酮、甲基异丁基酮、二异丁基甲酮、甲基异戊基酮、甲醚、乙二醇丙醚、乙二醇丁醚、乙二醇己醚、羟乙基乙醚、二丙二醇甲醚、丙二醇甲醚、丙二醇单丁基醚、二乙二醇甲醚、二乙二醇乙醚、二乙二醇丙醚、二乙二醇丁醚、丙二醇单丙基醚、甲酸、乙酸、乙酸甲酯、乙酸乙酯、乙酸异丙酯、正乙酸丙酯、乙酸异丁酯、乙酸正丁酯、乙酸甲基戊酯、丙酸正丁酯、乙酸戊酯、异丁酸异丁酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯、甲酸-2-乙基已酯、丙烯腈、氯仿、二氯乙烷、二硫化碳、环己烷、苯、甲苯、二甲苯、吡啶、2-硝基丙烷、或者炔烃中的任意一种或两种以上的组合。Further, the first organic solvent is methanol, ethanol, chloroethanol, n-propanol, isopropanol, 1-butanol, isobutanol, 2-butanol, pentanol, isoamyl alcohol, glycerol , diacetone alcohol, acetone, butanone, cyclohexanone, methyl n-acetone, methyl isobutyl ketone, diisobutyl ketone, methyl isoamyl ketone, methyl ether, ethylene glycol propyl ether, ethylene glycol Butyl ether, ethylene glycol hexyl ether, hydroxyethyl ethyl ether, dipropylene glycol methyl ether, propylene glycol methyl ether, propylene glycol monobutyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol propyl ether, Ethylene glycol butyl ether, propylene glycol monopropyl ether, formic acid, acetic acid, methyl acetate, ethyl acetate, isopropyl acetate, n-propyl acetate, isobutyl acetate, n-butyl acetate, methylpentyl acetate, n-butyl propionate, amyl acetate, isobutyl isobutyrate, butyl glycol ether acetate, diethylene glycol ethyl ether acetate, 2-ethylhexyl formate, acrylonitrile, chloroform, di Any one or a combination of two or more of ethyl chloride, carbon disulfide, cyclohexane, benzene, toluene, xylene, pyridine, 2-nitropropane, or alkynes.

进一步的,所述的修饰剂为醇酸树脂类物质、季铵盐类表面活性剂、阴离子表面活性剂、或者硅氧烷表面活性剂中的任意一种。Further, the modifying agent is any one of alkyd resin, quaternary ammonium salt surfactant, anionic surfactant, or silicone surfactant.

进一步的,所述的季铵盐类表面活性剂为十六烷基三甲基溴化铵、十六烷基三甲基氯化铵、十二烷基三甲基氯化铵、或者十二烷基二甲基溴化铵中的任意一种或两种以上的混合。Further, the quaternary ammonium salt surfactant is cetyltrimethylammonium bromide, cetyltrimethylammonium chloride, dodecyltrimethylammonium chloride, or dodecyltrimethylammonium chloride Any one or a mixture of two or more of alkyl dimethyl ammonium bromide.

进一步的,所述的阴离子表面活性剂选自烷基苯磺酸钠、烷基硫酸钠、脂肪酸钠、烷基聚氧乙烯醚、羧酸钠烷基磺酸钠、亚甲基双萘磺酸钠、或者油酰甲基牛黄酸钠中任意一种或两种以上的混合。Further, the anionic surfactant is selected from sodium alkylbenzene sulfonate, sodium alkyl sulfate, sodium fatty acid, alkyl polyoxyethylene ether, sodium carboxylate alkyl sulfonate, methylene bis-naphthalene sulfonic acid Sodium, or sodium oleoyl methyl taurate, any one or a mixture of two or more.

进一步的,所述的硅氧烷表面活性剂为八甲基环四硅氧烷、六甲基环三硅氧烷、或者一二甲基硅氧烷中的任意一种或两种以上的混合。Further, the siloxane surfactant is any one of octamethylcyclotetrasiloxane, hexamethylcyclotrisiloxane, or a dimethylsiloxane or a mixture of two or more .

进一步的,制备的有机晶体的长为50-2000μm ,宽为50-2000μm ,高0.02-5μm 。Further, the prepared organic crystal has a length of 50-2000 μm, a width of 50-2000 μm, and a height of 0.02-5 μm.

进一步的,所述的第二有机溶剂为低沸点极性溶剂,所述的低沸点极性溶剂选自甲醇、乙醇、二甲亚砜或者丙醇。Further, the second organic solvent is a low-boiling polar solvent, and the low-boiling polar solvent is selected from methanol, ethanol, dimethyl sulfoxide or propanol.

进一步的,根据制备条件的不同,可以分别制备出直线、双/多分歧、环形以及薄膜形晶体。晶体在偏光显微镜下呈现单晶特性。Furthermore, according to the different preparation conditions, linear, double/multi-branched, ring-shaped and thin-film crystals can be prepared respectively. The crystals exhibit single crystal properties under a polarizing microscope.

进一步的,所述的基板为亲水加热基板。Further, the substrate is a hydrophilic heating substrate.

进一步的,甲醇、乙醇、丙醇、等低沸点极性溶剂。Further, low boiling point polar solvents such as methanol, ethanol, propanol, etc.

本发明将有机晶体原料、修饰剂溶解在有机溶剂中并搅拌均匀,然后将混合溶液滴加到50-150摄氏度的基板上进行蒸发,然后把培养皿放在在不同温度下进行培养,培养过程中可以滴加少量的有机溶剂,根据添加的修饰剂量的多少、培养时间不同、加热时间的不同、培养温度不同,从而得到不同尺寸和形状的有机晶体薄膜。我们称之为表面支持湿法退火制备有机晶体薄膜的方法。基板可以为亲水性基板也可以为疏水性基板,根据有机晶体原料的亲水性,选择合适的基板。一般,当有机晶体原料为亲水性材质时,选择亲水性基板;当有机晶体原料为疏水性材质时,选择疏水性基板。In the present invention, organic crystal raw materials and modifiers are dissolved in an organic solvent and stirred evenly, then the mixed solution is dripped onto a substrate at 50-150 degrees Celsius for evaporation, and then culture dishes are placed at different temperatures for cultivation. The cultivation process A small amount of organic solvent can be added dropwise, and organic crystal films of different sizes and shapes can be obtained according to the amount of modifier added, different incubation times, different heating times, and different incubation temperatures. We call it the method of surface-supported wet annealing to prepare organic crystal thin films. The substrate can be a hydrophilic substrate or a hydrophobic substrate, and a suitable substrate is selected according to the hydrophilicity of the organic crystal raw material. Generally, when the organic crystal raw material is a hydrophilic material, a hydrophilic substrate is selected; when the organic crystal raw material is a hydrophobic material, a hydrophobic substrate is selected.

表面支持湿法退火方法制备有机晶体线尺寸分布可以控制在长为1-1000μm,宽为1-100μm ,高0.01-10μm 范围内,其方法制备的有机晶体薄膜尺寸分布可以控制在长为50-2000μm,宽为50-2000μm,高0.02-5μm范围内根据实际要求,可以制备需要尺寸的有机晶体。The size distribution of organic crystals prepared by surface support wet annealing method can be controlled in the range of 1-1000 μm in length, 1-100 μm in width and 0.01-10 μm in height, and the size distribution of organic crystal films prepared by this method can be controlled in the range of 50- 2000μm, 50-2000μm in width, and 0.02-5μm in height, according to actual requirements, organic crystals of required size can be prepared.

本方法制备的有机晶体薄膜成本较低,良好生长能力、晶格完整且具有活性。可以应用于超高速光电信号调制、生物荧光显微、激光器制作以及太赫兹辐射源和探测等应用领域等。The organic crystal thin film prepared by the method has low cost, good growth ability, complete lattice and activity. It can be applied to ultra-high-speed photoelectric signal modulation, bioluminescent microscopy, laser production, terahertz radiation source and detection and other application fields.

4-(4-甲基氨基苯乙烯基)甲基吡啶对甲基苯磺酸盐(DAST)有机晶体属于有机二阶非线性单斜晶体,由于表现出的高荧光量子点效率、较快的光响应以及高的非线性系数等优点使其受到了广泛的关注,它在1542 nm的二阶非线性系数为840 pm/V,在820 nm的电光系数为75 pm/V,比目前广泛应用的ZnTe的相应数值高1~2个数量级,由于DAST的介电常数低,具有较长的相干长度和较快的响应特性。DAST化学结构比较特别,是有机吡啶盐的典型代表之一。吡啶环上的碳原子与氮原子均以sp2杂化轨道成键,环上每个原子均以一个π轨道形成共轭体系,氮原子上的孤对电子不参加共轭,因此,吡啶成盐后并不破坏环状共轭体系。此类分子中含有两个大π键,一个是苯环,另一个是吡啶环,通过中间的碳碳双键把两个大π键共轭起来,电子电荷可以从一端离域到另一端,从而使DAST分子的二阶非线性极化率增大。吡啶阳离子作为带正电荷的基团,是一种很强的吸电子基团。受体强度越大,分子内电荷转移程度越大,相应的微观二阶极化率也将越大。DAST这种独特的化学结构使其在多种技术领域中显示出较强的应用的前景,例如在太赫兹产生和发射领域。1992年,文献X.C. Zhang, X. F. Ma, Y. Jin,“Terahertz Optical Rectification from a Nonlinear Organic Crystal”,Applied PhysicsLet ters,61(26), 3080-3082(1992)报道DAST能通过光整 流 发 射 出 THz 波。 2004 年,文献T. Taniuchi, S. Okada, H.Nakanishi,“Widely-tunable THz-wave Generation in 2-20THz Range from DASTCrystal by Non linear Difference Frequency Mixing”,Electronics Letters, 40(1),60-62(2004)报道在1300~1450 nm范围内通过OPO混频能产生 2~20 THz的可调太赫兹波,在11.6 THz时输出能量为82 nJ/脉冲、峰值为10.3 W,19 THz时输出能量为110 nJ/脉冲、峰值为13.8 W。但是DAST晶体在应用传统的再沉淀法制备过程中,只用来制备小颗粒,目前还没有发现DAST的晶体薄膜,而且DAST颗粒保持的活性时间短,在强激光的照射下,热损伤特别厉害,不能长期工作。在本发明应用表面支持湿法退火方法,制备DAST有机晶体薄膜,晶体尺寸分布可以控制在50-2000μm,宽为50-2000μm,高0.02-5μm范围内,根据实际要求,可以制备需要尺寸的晶体薄膜。4-(4-methylaminostyryl)picoline p-toluenesulfonate (DAST) organic crystals belong to organic second-order nonlinear monoclinic crystals, due to the high fluorescent quantum dot efficiency, fast The advantages of photoresponse and high nonlinear coefficient have attracted widespread attention. Its second-order nonlinear coefficient at 1542 nm is 840 pm/V, and its electro-optic coefficient at 820 nm is 75 pm/V, which is more widely used than current The corresponding value of ZnTe is 1 to 2 orders of magnitude higher. Due to the low dielectric constant of DAST, it has longer coherence length and faster response characteristics. DAST has a special chemical structure and is one of the typical representatives of organic pyridinium salts. The carbon atom and nitrogen atom on the pyridine ring are bonded by sp 2 hybrid orbitals, and each atom on the ring forms a conjugated system with a π orbital, and the lone pair of electrons on the nitrogen atom does not participate in conjugation. Therefore, pyridine forms a salt After that, the ring conjugated system is not destroyed. This type of molecule contains two large π bonds, one is a benzene ring and the other is a pyridine ring. The two large π bonds are conjugated through the carbon-carbon double bond in the middle, and the electronic charge can be delocalized from one end to the other. Thus, the second-order nonlinear susceptibility of DAST molecules increases. Pyridinium cation, as a positively charged group, is a strong electron-withdrawing group. The greater the acceptor strength, the greater the degree of intramolecular charge transfer, and the corresponding microscopic second-order polarizability will also be greater. The unique chemical structure of DAST shows strong application prospects in various technical fields, such as in the field of terahertz generation and emission. In 1992, XC Zhang, XF Ma, Y. Jin, "Terahertz Optical Rectification from a Nonlinear Organic Crystal", Applied Physics Let ters, 61(26), 3080-3082(1992) reported that DAST can emit THz waves through optical rectification . 2004, T. Taniuchi, S. Okada, H. Nakanishi, "Widely-tunable THz-wave Generation in 2-20THz Range from DASTCrystal by Non linear Difference Frequency Mixing", Electronics Letters, 40(1), 60-62 (2004) reported that tunable terahertz waves of 2-20 THz can be generated by OPO mixing in the range of 1300-1450 nm, the output energy is 82 nJ/pulse at 11.6 THz, the peak value is 10.3 W, and the output energy at 19 THz 110 nJ/pulse, 13.8 W peak. However, DAST crystals are only used to prepare small particles in the traditional reprecipitation method, and no DAST crystal film has been found so far, and the activity time of DAST particles is short. Under the irradiation of strong laser, the thermal damage is particularly severe. , cannot work for a long time. In the present invention, the surface-supported wet annealing method is used to prepare DAST organic crystal thin films. The crystal size distribution can be controlled within the range of 50-2000 μm, width 50-2000 μm, and height 0.02-5 μm. According to actual requirements, crystals of required sizes can be prepared film.

本发明将有机晶体原料、修饰剂溶解在有机溶剂中并搅拌均匀,然后根据有机溶液的沸点将混合溶液滴加到50-150摄氏度的基板上进行蒸发,有机晶体沿ab晶轴平面方向生长,从而得到的有机晶体薄膜。本方法中,在高温溶剂蒸发时晶体析出的速度快,在饱和蒸气压下的培养皿中,发生有机分子纳米颗粒通过毛细现象吸引后的自组装过程,受基板材料的亲水性程度的影响,晶体在与基板垂直的方向上生长受限,从而导致二维的有机晶体薄膜的出现,而且有机晶体薄膜的大小形状根据修饰剂与有机晶体质量比、培养时间、基板材料的亲疏水性和培养温度等条件的改变而改变。In the present invention, organic crystal raw materials and modifiers are dissolved in an organic solvent and stirred evenly, and then the mixed solution is dripped onto a substrate at 50-150 degrees Celsius according to the boiling point of the organic solution for evaporation, and the organic crystal grows along the ab crystal axis plane direction, The resulting organic crystal thin film. In this method, the precipitation of crystals is fast when the high-temperature solvent evaporates. In the petri dish under saturated vapor pressure, the self-assembly process of organic molecular nanoparticles after capillary attraction occurs, which is affected by the degree of hydrophilicity of the substrate material. , the growth of crystals in the direction perpendicular to the substrate is limited, resulting in the appearance of a two-dimensional organic crystal film, and the size and shape of the organic crystal film depends on the mass ratio of the modifier to the organic crystal, the incubation time, the hydrophilicity and hydrophobicity of the substrate material, and the culture. Changes in conditions such as temperature.

本发明和已有技术相比,其技术进步是显著的。本发明的一种表面支持湿法退火制备有机晶体薄膜的方法,尺寸可控性好,缺陷少,应用性强,降低了有机晶体生产的成本,拓宽了线条状有机晶体和有机晶体薄膜在光学应用领域的使用。Compared with the prior art, the technical progress of the present invention is remarkable. A method for preparing organic crystal thin films by surface-supported wet annealing of the present invention has good size controllability, few defects, strong applicability, reduces the cost of organic crystal production, and broadens the range of optical properties of linear organic crystals and organic crystal thin films. application field of use.

附图说明Description of drawings

图1为实施例1制备的DAST有机晶体的光学显微镜示意图。FIG. 1 is a schematic diagram of an optical microscope of the DAST organic crystal prepared in Example 1.

图2为实施例2制备的DAST有机晶体的光学显微镜示意图。FIG. 2 is an optical microscope schematic diagram of the DAST organic crystal prepared in Example 2.

图3为实施例3制备的DAST有机晶体薄膜的光学显微镜示意图。FIG. 3 is a schematic diagram of an optical microscope of the DAST organic crystal thin film prepared in Example 3. FIG.

图4为实施例4制备的DAST有机晶体薄膜的光学显微镜示意图。FIG. 4 is an optical microscope schematic diagram of the DAST organic crystal thin film prepared in Example 4.

图5为实施例5制备的DAST有机晶体薄膜的光学显微镜示意图。FIG. 5 is an optical microscope schematic diagram of the DAST organic crystal thin film prepared in Example 5.

图6为实施例6制备的DAST有机晶体薄膜的光学显微镜示意图。FIG. 6 is an optical microscope schematic diagram of the DAST organic crystal film prepared in Example 6. FIG.

具体实施方式detailed description

下面结合具体实施方式对本发明作进一步详细的说明。The present invention will be described in further detail below in combination with specific embodiments.

实施例1Example 1

DAST有机晶体薄膜的制备。Preparation of DAST organic crystal thin films.

取0.03g DAST晶体原料和0.01g十六烷基三甲基溴化铵,加入到5 ml的无水甲醇中,在800 rpm/min下搅拌1小时。在常温下取0.1 ml DAST-甲醇,加入到10 ml无水甲醇中,在1200 rpm/min下搅拌20min,取一滴上述的混合溶液滴加到亲水基板上,该亲水基板先浸泡在丙酮溶液中,再用超声波震动20分钟,后用深紫外臭氧清洗机处理1小时得到的。后把比色皿放在室温下,并在比色皿中不滴加甲醇,培养3小时,得到DAST颗粒。Take 0.03 g of DAST crystal raw material and 0.01 g of cetyltrimethylammonium bromide, add them into 5 ml of anhydrous methanol, and stir at 800 rpm/min for 1 hour. Take 0.1 ml of DAST-methanol at room temperature, add it to 10 ml of anhydrous methanol, stir at 1200 rpm/min for 20 minutes, take a drop of the above mixed solution and drop it on the hydrophilic substrate, which is first soaked in acetone solution, then ultrasonically vibrated for 20 minutes, and then treated with a deep ultraviolet ozone cleaner for 1 hour. Finally, the cuvette was placed at room temperature, and methanol was not added dropwise to the cuvette, and incubated for 3 hours to obtain DAST particles.

本方法中,由于温度以及基板材质的影响,导致晶体双方向团聚排列,最终生长成晶体薄膜。有机晶体薄膜的大小形状根据修饰剂与有机晶体质量比、加热基板的温度和基板亲水性的改变而改变。见图1。In this method, due to the influence of the temperature and the material of the substrate, the crystals are agglomerated and arranged in two directions, and finally grow into a crystal thin film. The size and shape of the organic crystal film are changed according to the mass ratio of the modifier to the organic crystal, the temperature at which the substrate is heated, and the change of the hydrophilicity of the substrate. see picture 1.

实施例2Example 2

DAST有机晶体薄膜的制备。Preparation of DAST organic crystal thin films.

取0.03g DAST晶体原料和0.01g十六烷基三甲基溴化铵,一起加入到5 ml的无水甲醇中,在800 rpm/min下搅拌1小时。在常温下取0.1 ml DAST-甲醇,加入到10 ml无水甲醇中,在1200 rpm/min下搅拌20分钟,取1滴上述的混合溶液滴在亲水基板上,该亲水基板先浸泡在丙酮溶液中,再用超声波震动20分钟,后用深紫外臭氧清洗机处理1小时得到的。后把比色皿放在室温下,在比色皿中滴加1滴甲醇,培养3小时,得到DAST有机晶体薄膜。Take 0.03 g of DAST crystal raw material and 0.01 g of cetyltrimethylammonium bromide, add them together into 5 ml of anhydrous methanol, and stir at 800 rpm/min for 1 hour. Take 0.1 ml of DAST-methanol at room temperature, add it to 10 ml of anhydrous methanol, stir at 1200 rpm/min for 20 minutes, take 1 drop of the above mixed solution and drop it on the hydrophilic substrate, which is first soaked in Acetone solution, then ultrasonically vibrated for 20 minutes, and then treated with a deep ultraviolet ozone cleaner for 1 hour. Finally, place the cuvette at room temperature, add 1 drop of methanol to the cuvette, and incubate for 3 hours to obtain the DAST organic crystal film.

该方法制备的DAST晶体没有培养,加热后静止30分钟后直接用显微镜观察。晶体薄膜形态还不太明显,见图2。The DAST crystals prepared by this method were not cultured, and were directly observed with a microscope after heating and resting for 30 minutes. The crystal thin film morphology is not too obvious, see Figure 2.

实施例3Example 3

DAST有机晶体薄膜的制备。Preparation of DAST organic crystal thin films.

取0.03g DAST晶体原料和0.01g十六烷基三甲基溴化铵,一起加入到5 ml的无水甲醇中,在800 rpm/min下搅拌1小时。在常温下取0.1 ml DAST-甲醇,加入到10 ml无水甲醇中,在1200 rpm/min下搅拌20分钟,取1滴上述的混合溶液滴在亲水基板上,该亲水基板先浸泡在丙酮溶液中,再用超声波震动20分钟,后用深紫外臭氧清洗机处理1小时得到的。后把比色皿放在室温下,在比色皿中滴加2滴甲醇,培养3小时,得到DAST有机晶体薄膜。Take 0.03 g of DAST crystal raw material and 0.01 g of cetyltrimethylammonium bromide, add them together into 5 ml of anhydrous methanol, and stir at 800 rpm/min for 1 hour. Take 0.1 ml of DAST-methanol at room temperature, add it to 10 ml of anhydrous methanol, stir at 1200 rpm/min for 20 minutes, take 1 drop of the above mixed solution and drop it on the hydrophilic substrate, which is first soaked in Acetone solution, then ultrasonically vibrated for 20 minutes, and then treated with a deep ultraviolet ozone cleaner for 1 hour. Finally, place the cuvette at room temperature, add 2 drops of methanol to the cuvette, and incubate for 3 hours to obtain a DAST organic crystal film.

该方法制备的DAST晶体薄膜进行培养,后用显微镜观察,发现晶体尺寸有明显的增大,长宽大小在5-50μm左右,见图3。The DAST crystal film prepared by this method was cultured, and then observed with a microscope, it was found that the crystal size increased significantly, and the length and width were about 5-50 μm, as shown in FIG. 3 .

实施例4Example 4

DAST有机晶体薄膜的制备。Preparation of DAST organic crystal thin films.

取0.03g DAST晶体原料和0.01g十六烷基三甲基溴化铵,一起加入到5 ml的无水甲醇中,在800 rpm/min下搅拌1小时。在常温下取0.1 ml DAST-甲醇,加入到10 ml无水甲醇中,在1200 rpm/min下搅拌20分钟,取1滴上述的混合溶液滴在亲水基板上,该亲水基板先浸泡在丙酮溶液中,再用超声波震动20分钟,后用深紫外臭氧清洗机处理1小时得到的。后把比色皿放入-18℃冰箱中,在比色皿中滴加2滴甲醇,培养3小时,得到DAST有机晶体薄膜。Take 0.03 g of DAST crystal raw material and 0.01 g of cetyltrimethylammonium bromide, add them together into 5 ml of anhydrous methanol, and stir at 800 rpm/min for 1 hour. Take 0.1 ml of DAST-methanol at room temperature, add it to 10 ml of anhydrous methanol, stir at 1200 rpm/min for 20 minutes, take 1 drop of the above mixed solution and drop it on the hydrophilic substrate, which is first soaked in Acetone solution, then ultrasonically vibrated for 20 minutes, and then treated with a deep ultraviolet ozone cleaner for 1 hour. Finally, put the cuvette into a -18°C refrigerator, add 2 drops of methanol to the cuvette, and incubate for 3 hours to obtain a DAST organic crystal film.

该方法制备的DAST晶体薄膜尺寸较小,大小分布在500-300μm。见图4。The DAST crystal film prepared by this method has a small size, and the size distribution is 500-300 μm. See Figure 4.

实施例5Example 5

DAST有机晶体薄膜的制备。Preparation of DAST organic crystal thin films.

取0.03g DAST晶体原料和0.01g十六烷基三甲基溴化铵,一起加入到5 ml的无水甲醇中,在800 rpm/min下搅拌1小时。在常温下取0.1 ml DAST-甲醇,加入到10 ml无水甲醇中,在1200 rpm/min下搅拌20分钟,取1滴上述的混合溶液滴在亲水基板上,该亲水基板先浸泡在丙酮溶液中,再用超声波震动20分钟,后用深紫外臭氧清洗机处理1小时得到的。后把比色皿放入-18℃冰箱中,在比色皿中滴加2滴甲醇,培养5小时,得到DAST有机晶体薄膜,见图5。Take 0.03 g of DAST crystal raw material and 0.01 g of cetyltrimethylammonium bromide, add them together into 5 ml of anhydrous methanol, and stir at 800 rpm/min for 1 hour. Take 0.1 ml of DAST-methanol at room temperature, add it to 10 ml of anhydrous methanol, stir at 1200 rpm/min for 20 minutes, take 1 drop of the above mixed solution and drop it on the hydrophilic substrate, which is first soaked in Acetone solution, then ultrasonically vibrated for 20 minutes, and then treated with a deep ultraviolet ozone cleaner for 1 hour. Finally, put the cuvette into a -18°C refrigerator, add 2 drops of methanol to the cuvette, and incubate for 5 hours to obtain a DAST organic crystal film, as shown in Figure 5.

实施例6Example 6

DAST有机晶体薄膜的制备。Preparation of DAST organic crystal thin films.

取0.03g DAST晶体原料和0.01g十六烷基三甲基溴化铵,一起加入到5 ml的无水甲醇中,在800 rpm/min下搅拌1小时。在常温下取0.1 ml DAST-甲醇,加入到10 ml无水甲醇中,在1200 rpm/min下搅拌20分钟,取1滴上述的混合溶液滴在亲水基板上,该亲水基板先浸泡在丙酮溶液中,再用超声波震动20分钟,后用深紫外臭氧清洗机处理1小时得到的。后把比色皿放入-18℃冰箱中,在比色皿中滴加2滴甲醇,培养7小时,得到DAST有机晶体薄膜,见图6。Take 0.03 g of DAST crystal raw material and 0.01 g of cetyltrimethylammonium bromide, add them together into 5 ml of anhydrous methanol, and stir at 800 rpm/min for 1 hour. Take 0.1 ml of DAST-methanol at room temperature, add it to 10 ml of anhydrous methanol, stir at 1200 rpm/min for 20 minutes, take 1 drop of the above mixed solution and drop it on the hydrophilic substrate, which is first soaked in Acetone solution, then ultrasonically vibrated for 20 minutes, and then treated with a deep ultraviolet ozone cleaner for 1 hour. Finally, put the cuvette into a -18°C refrigerator, add 2 drops of methanol to the cuvette, and incubate for 7 hours to obtain a DAST organic crystal film, as shown in Figure 6.

由实施例1、2、3可以看出滴加的甲醇多少对薄膜的形状大小有很大的影响,滴加的甲醇越多薄膜形态越好。由实施例3、4可以看出培养温度的重要性,培养温度越低,形体形貌更好,尺寸更大。由实施例4、5、6可以看出培养时间的重要性,培养时间越长,薄膜尺寸越大,形态越好。DAST晶体原料与修饰剂比例为1:1-20范围内,得到DAST有机晶体薄膜形态及尺寸较好。From Examples 1, 2, and 3, it can be seen that the amount of methanol added has a great influence on the shape and size of the film, and the more methanol added, the better the shape of the film. From Examples 3 and 4, it can be seen that the importance of culture temperature is lower, the lower the culture temperature, the better the shape and the larger the size. From Examples 4, 5, and 6, it can be seen that the importance of culture time is longer, the longer the culture time, the larger the film size and the better the shape. The ratio of DAST crystal raw material to modifier is in the range of 1:1-20, and the shape and size of DAST organic crystal film are better.

显然,上述实施例仅是为清楚地说明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围之中。Apparently, the above-mentioned embodiments are only examples for clear description, rather than limiting the implementation. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here. And the obvious changes or changes derived therefrom are still within the scope of protection of the present invention.

Claims (10)

1.一种制备有机晶体薄膜的方法,其特征在于:将有机晶体原料、修饰剂溶解在第一有机溶剂中,并搅拌均匀,所述的机晶体原料和修饰剂的质量比为1:0.1~10,然后将混合溶液滴加到50-150摄氏度的基板上进行蒸发,蒸发时间控制在3分钟以内,再将该基板置于甲醇的饱和蒸气压下的容器中,在-30~50摄氏度的温度下培养1~30小时,获得有机晶体薄膜。1. A method for preparing organic crystal film, characterized in that: organic crystal raw material and modifier are dissolved in the first organic solvent, and stirred evenly, the mass ratio of described organic crystal raw material and modifier is 1:0.1 ~10, then drop the mixed solution onto the substrate at 50-150 degrees Celsius for evaporation, the evaporation time is controlled within 3 minutes, and then place the substrate in a container under the saturated vapor pressure of methanol, at -30-50 degrees Celsius Cultivate at a certain temperature for 1 to 30 hours to obtain an organic crystal film. 2.根据权利要求1所述的一种制备有机晶体薄膜的方法,其特征在于:将该基板置于容器中后滴入第二种有机溶剂,所述的第二种有机溶剂为所述的有机晶体的良溶剂,根据相似相溶原理,依据所述的有机晶体的极性选择不同的第二种有机溶剂。2. A kind of method for preparing organic crystal thin film according to claim 1, is characterized in that: drop into second kind of organic solvent after this substrate is placed in container, and described second kind of organic solvent is described As for the good solvent of the organic crystal, according to the principle of similar miscibility, a different second organic solvent is selected according to the polarity of the organic crystal. 3.根据权利要求1所述的一种制备有机晶体薄膜的方法,其特征在于:所述的有机晶体原料为二甲氨基苯乙烯基甲基吡啶盐类物质,所述的二甲氨基苯乙烯基甲基吡啶盐类物质为4-(4-二甲氨基苯乙烯基)甲基吡啶对甲苯磺酸盐、4-(4-二甲氨基苯乙烯基)甲基吡啶2,4, 6-三甲基苯磺酸盐、4-(4-二甲氨基苯乙烯基)甲基吡啶萘磺酸盐、4-(4-二甲氨基苯乙烯基)甲基吡啶 对乙烯基苯磺酸盐、4-(4-二甲氨基苯乙烯基)甲基吡啶 2,4-二甲基苯磺酸盐、4-(4-二甲氨基苯乙烯基)甲基吡啶2-萘磺酸盐、4-(4-二甲氨基苯乙烯基)甲基吡啶对苯氨基苯磺酸、4-(4-二甲氨基苯乙烯基)甲基吡啶 4-氨基萘磺酸、4-(4-二甲氨基苯乙烯基)甲基吡啶 4-(4-二甲氨基苯基)偶氮甲基苯磺酸、或者4-(4-二甲氨基苯乙烯基)甲基吡啶对氯苯磺酸盐。3. A kind of method for preparing organic crystal thin film according to claim 1, is characterized in that: described organic crystal raw material is dimethylaminostyryl picolinium salt class material, and described dimethylaminostyrene The base picoline salts are 4-(4-dimethylaminostyryl)picoline p-toluenesulfonate, 4-(4-dimethylaminostyryl)picoline 2,4,6- Trimethylbenzenesulfonate, 4-(4-Dimethylaminostyryl)methylpyridinenaphthalenesulfonate, 4-(4-Dimethylaminostyryl)picoline p-vinylbenzenesulfonate , 4-(4-dimethylaminostyryl)picoline 2,4-dimethylbenzenesulfonate, 4-(4-dimethylaminostyryl)picoline 2-naphthalenesulfonate, 4-(4-Dimethylaminostyryl)methylpyridine p-anilinesulfonic acid, 4-(4-Dimethylaminostyryl)methylpyridine 4-aminonaphthalenesulfonic acid, 4-(4-di Methylaminostyryl)picoline 4-(4-dimethylaminophenyl)azomethylbenzenesulfonic acid, or 4-(4-dimethylaminostyryl)picoline p-chlorobenzenesulfonate . 4.根据权利要求1所述的一种制备有机晶体薄膜的方法,其特征在于:所述的第一有机溶剂为甲醇、乙醇、氯乙醇、正丙醇、异丙醇、1-丁醇、异丁醇、2-丁醇、戊醇、异戊醇、丙三醇、二丙酮醇、丙酮、丁酮、环已酮、甲基正丙酮、甲基异丁基酮、二异丁基甲酮、甲基异戊基酮、甲醚、乙二醇丙醚、乙二醇丁醚、乙二醇己醚、羟乙基乙醚、二丙二醇甲醚、丙二醇甲醚、丙二醇单丁基醚、二乙二醇甲醚、二乙二醇乙醚、二乙二醇丙醚、二乙二醇丁醚、丙二醇单丙基醚、甲酸、乙酸、乙酸甲酯、乙酸乙酯、乙酸异丙酯、正乙酸丙酯、乙酸异丁酯、乙酸正丁酯、乙酸甲基戊酯、丙酸正丁酯、乙酸戊酯、异丁酸异丁酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯、甲酸-2-乙基已酯、丙烯腈、氯仿、二氯乙烷、二硫化碳、环己烷、苯、甲苯、二甲苯、吡啶、2-硝基丙烷、或者炔烃中的任意一种或两种以上的组合。4. a kind of method for preparing organic crystal film according to claim 1 is characterized in that: described first organic solvent is methyl alcohol, ethanol, chloroethanol, n-propanol, Virahol, 1-butanol, Isobutanol, 2-butanol, amyl alcohol, isoamyl alcohol, glycerol, diacetone alcohol, acetone, butanone, cyclohexanone, methyl n-acetone, methyl isobutyl ketone, diisobutyl ketone, Methyl isoamyl ketone, methyl ether, ethylene glycol propyl ether, ethylene glycol butyl ether, ethylene glycol hexyl ether, hydroxyethyl ethyl ether, dipropylene glycol methyl ether, propylene glycol methyl ether, propylene glycol monobutyl ether, diethyl ether Glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol propyl ether, diethylene glycol butyl ether, propylene glycol monopropyl ether, formic acid, acetic acid, methyl acetate, ethyl acetate, isopropyl acetate, n-acetic acid Propyl ester, isobutyl acetate, n-butyl acetate, methylpentyl acetate, n-butyl propionate, amyl acetate, isobutyl isobutyrate, butyl glycol ether acetate, diethylene glycol ethyl ether Any of acetate, 2-ethylhexyl formate, acrylonitrile, chloroform, dichloroethane, carbon disulfide, cyclohexane, benzene, toluene, xylene, pyridine, 2-nitropropane, or alkynes One or a combination of two or more. 5.根据权利要求1所述的一种制备有机晶体薄膜的方法,其特征在于:所述的修饰剂为醇酸树脂类物质、季铵盐类表面活性剂、阴离子表面活性剂、或者硅氧烷表面活性剂中的任意一种。5. A kind of method for preparing organic crystal film according to claim 1, is characterized in that: described modifying agent is alkyd resin class material, quaternary ammonium salt class surfactant, anionic surfactant or silicon oxide Any of the alkane surfactants. 6.根据权利要求5所述的一种制备有机晶体薄膜的方法,其特征在于:所述的季铵盐类表面活性剂为十六烷基三甲基溴化铵、十六烷基三甲基氯化铵、十二烷基三甲基氯化铵、或者十二烷基二甲基溴化铵中的任意一种或两种以上的混合。6. A kind of method for preparing organic crystal film according to claim 5, is characterized in that: described quaternary ammonium salt surfactant is cetyltrimethylammonium bromide, cetyltrimethylammonium Ammonium chloride, dodecyl trimethyl ammonium chloride, or dodecyl dimethyl ammonium bromide any one or a mixture of two or more. 7.根据权利要求5所述的一种制备有机晶体薄膜的方法,其特征在于:所述的阴离子表面活性剂选自烷基苯磺酸钠、烷基硫酸钠、脂肪酸钠、烷基聚氧乙烯醚、羧酸钠烷基磺酸钠、亚甲基双萘磺酸钠、或者油酰甲基牛黄酸钠中任意一种或两种以上的混合。7. a kind of method for preparing organic crystal thin film according to claim 5 is characterized in that: described anion surfactant is selected from sodium alkylbenzene sulfonate, sodium alkyl sulfate, sodium fatty acid, alkyl polyoxygen Any one or a mixture of two or more of vinyl ether, sodium carboxylate, sodium alkyl sulfonate, sodium methylene bis-naphthalene sulfonate, or sodium oleoyl methyl taurate. 8.根据权利要求5所述的一种制备有机晶体薄膜的方法,其特征在于:所述的硅氧烷表面活性剂为八甲基环四硅氧烷、六甲基环三硅氧烷、或者一二甲基硅氧烷中的任意一种或两种以上的混合。8. a kind of method for preparing organic crystal film according to claim 5 is characterized in that: described siloxane surfactant is octamethylcyclotetrasiloxane, hexamethylcyclotetrasiloxane, Or any one or a mixture of two or more of dimethyl siloxanes. 9.根据权利要求1所述的一种制备有机晶体薄膜的方法,其特征在于:制备的有机晶体的长为50-2000μm ,宽为50-2000μm ,高0.02-5μm 。9. A method for preparing an organic crystal thin film according to claim 1, characterized in that: the length of the prepared organic crystal is 50-2000 μm, the width is 50-2000 μm, and the height is 0.02-5 μm. 10.根据权利要求2所述的一种制备有机晶体薄膜的方法,其特征在于:所述的第二有机溶剂为低沸点极性溶剂,所述的低沸点极性溶剂选自甲醇、乙醇、二甲亚砜或者丙醇。10. A kind of method for preparing organic crystal thin film according to claim 2, is characterized in that: described second organic solvent is low boiling point polar solvent, and described low boiling point polar solvent is selected from methanol, ethanol, Dimethyl sulfoxide or propanol.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110386862A (en) * 2018-04-17 2019-10-29 首都师范大学 Intramolecular exciton splits the synthetic method and method for manufacturing thin film, method for preparing single crystal of point material
CN110837196A (en) * 2019-11-13 2020-02-25 上海理工大学 Light-resistant supermolecule organic crystal material and preparation method thereof
CN110872730A (en) * 2018-08-29 2020-03-10 天津大学 A method for controlling the growth of two-dimensional organic single-crystal films using viscous substrates and surfactants

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002029899A (en) * 2000-07-21 2002-01-29 Univ Osaka Method for cleaning organic optical single crystal and organic optical single crystal
CN1562730A (en) * 2004-03-24 2005-01-12 哈尔滨工业大学 Method for adjusting and controlling configuration of self-assembling block copolymer template oriented to nano micro machining
JP2006021976A (en) * 2004-07-09 2006-01-26 Ricoh Co Ltd Method and apparatus for manufacturing thin film-like organic single crystal
CN101823995A (en) * 2010-03-31 2010-09-08 北京科技大学 4-(4-dimethylaminostyryl) picoline3-carboxyl-4-hydroxy benzene sulfonate, nonlinear optical crystal and preparation method thereof
CN102351851A (en) * 2011-07-29 2012-02-15 北京科技大学 4-(5-dimethylaminothiophenevinyl)methylpyridine sulfonate, second-order nonlinear optical crystal of 4-(5-dimethylaminothiophenevinyl)methylpyridine sulfonate, and their preparation methods
CN103305919A (en) * 2013-07-11 2013-09-18 青岛大学 Growth method of organic nonlinear optical crystal
CN104250845A (en) * 2013-06-27 2014-12-31 中国科学院化学研究所 Construction method of low-dimensional organic frequency-doubling crystal
CN104562174A (en) * 2014-12-29 2015-04-29 青岛大学 Controlled DAST crystal growing device for spontaneous nucleation process
CN104962985A (en) * 2015-07-15 2015-10-07 中国电子科技集团公司第四十六研究所 Growth process for crystal-size-controllable DAST (4-N,N-dimethylamino-4'-N'-methyl-stilbazolium tosylate) crystals
CN105177713A (en) * 2015-08-07 2015-12-23 青岛大学 A kind of organic pyridinium salt crystal growth control method
CN105542753A (en) * 2015-12-23 2016-05-04 上海多磨新材料科技有限公司 Preparation method of organic nanocrystals
CN105780125A (en) * 2016-01-18 2016-07-20 上海多磨新材料科技有限公司 Preparation method of mesoscale line-shaped organic crystal

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002029899A (en) * 2000-07-21 2002-01-29 Univ Osaka Method for cleaning organic optical single crystal and organic optical single crystal
CN1562730A (en) * 2004-03-24 2005-01-12 哈尔滨工业大学 Method for adjusting and controlling configuration of self-assembling block copolymer template oriented to nano micro machining
JP2006021976A (en) * 2004-07-09 2006-01-26 Ricoh Co Ltd Method and apparatus for manufacturing thin film-like organic single crystal
CN101823995A (en) * 2010-03-31 2010-09-08 北京科技大学 4-(4-dimethylaminostyryl) picoline3-carboxyl-4-hydroxy benzene sulfonate, nonlinear optical crystal and preparation method thereof
CN102351851A (en) * 2011-07-29 2012-02-15 北京科技大学 4-(5-dimethylaminothiophenevinyl)methylpyridine sulfonate, second-order nonlinear optical crystal of 4-(5-dimethylaminothiophenevinyl)methylpyridine sulfonate, and their preparation methods
CN104250845A (en) * 2013-06-27 2014-12-31 中国科学院化学研究所 Construction method of low-dimensional organic frequency-doubling crystal
CN103305919A (en) * 2013-07-11 2013-09-18 青岛大学 Growth method of organic nonlinear optical crystal
CN104562174A (en) * 2014-12-29 2015-04-29 青岛大学 Controlled DAST crystal growing device for spontaneous nucleation process
CN104962985A (en) * 2015-07-15 2015-10-07 中国电子科技集团公司第四十六研究所 Growth process for crystal-size-controllable DAST (4-N,N-dimethylamino-4'-N'-methyl-stilbazolium tosylate) crystals
CN105177713A (en) * 2015-08-07 2015-12-23 青岛大学 A kind of organic pyridinium salt crystal growth control method
CN105542753A (en) * 2015-12-23 2016-05-04 上海多磨新材料科技有限公司 Preparation method of organic nanocrystals
CN105780125A (en) * 2016-01-18 2016-07-20 上海多磨新材料科技有限公司 Preparation method of mesoscale line-shaped organic crystal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ZHOU YANG,ET AL.: "Large-Size Bulk and Thin-Film Stilbazolium-Salt Single Crystals for Nonlinear Optics and THz Generation", 《ADVANCED FUNCTIONAL MATERIALS》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110386862A (en) * 2018-04-17 2019-10-29 首都师范大学 Intramolecular exciton splits the synthetic method and method for manufacturing thin film, method for preparing single crystal of point material
CN110872730A (en) * 2018-08-29 2020-03-10 天津大学 A method for controlling the growth of two-dimensional organic single-crystal films using viscous substrates and surfactants
CN110872730B (en) * 2018-08-29 2021-03-30 天津大学 A method for controlling the growth of two-dimensional organic single-crystal films using viscous substrates and surfactants
CN110837196A (en) * 2019-11-13 2020-02-25 上海理工大学 Light-resistant supermolecule organic crystal material and preparation method thereof

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