CN106222619A - A kind of substrate, substrate and preparation method thereof, electronic device - Google Patents

Abstract

The invention relates to the technical field of electronic devices, and discloses a base, a substrate, a manufacturing method thereof, and an electronic device. The substrate of the present invention includes a step of forming a buffer layer on the surface of a substrate, and forms a buffer layer with a required thickness through multiple film forming processes. After each sub-buffer layer, cooling treatment is carried out, so that the overall temperature of the substrate is always low, and the generation of internal stress is reduced. At the same time, since the thermal expansion coefficient of the buffer layer is smaller than that of the substrate, the buffer layer has better heat resistance, so that various functional films of electronic devices can be fabricated on the buffer layer in a high temperature environment, ensuring the film quality and Reduce the generation of internal stress in the film and improve the quality of electronic devices.

Description

A kind of substrate, substrate and manufacturing method thereof, electronic device

technical field

The invention relates to the technical field of electronic devices, in particular to a substrate, a substrate and a manufacturing method thereof, and an electronic device.

Background technique

In recent years, with the continuous development of electronic devices in the direction of light weight, thinning and flexibility, flexible devices, such as LCD displays and OLED displays, and flexible thin-film solar cells, have attracted great attention. Depositing a transparent conductive layer on a flexible polymer film substrate to make a flexible transparent conductive substrate, thereby replacing the traditional hard glass conductive substrate is the core technology for realizing the flexibility of electronic devices.

However, the polymer film base material has poor heat resistance, and the transparent conductive layer can only be deposited at a relatively low temperature, so it is difficult to obtain a transparent conductive layer with good deposition quality. At the same time, when the transparent conductive layer is deposited at a higher temperature, due to the large difference in thermal expansion coefficient between the transparent conductive layer and the polymer film, it is easy to generate a large internal stress, and the above factors will adversely affect the performance of the flexible device.

Contents of the invention

The invention provides a substrate, a substrate, a manufacturing method thereof, and an electronic device to solve the problem of how to obtain a substrate with better heat resistance.

In order to solve the above technical problems, an embodiment of the present invention provides a substrate manufacturing method, including the step of forming a buffer layer on the surface of a substrate, and the step of forming the buffer layer includes:

forming a sub-buffer layer on the surface of the substrate, and performing a cooling treatment on the sub-buffer layer;

Repeating the above steps to form a plurality of sub-buffer layers, the buffer layer is formed by laminating the plurality of sub-buffer layers, and the coefficient of thermal expansion of the buffer layer is smaller than the coefficient of thermal expansion of the substrate.

An embodiment of the present invention also provides a method for manufacturing a transparent conductive substrate, using the above-mentioned manufacturing method to form a base, and forming a transparent conductive layer on the buffer layer of the base.

An embodiment of the present invention also provides a method for manufacturing a display substrate, including:

Forming the substrate by the manufacturing method as described above;

Various film layer structures for display are formed on the buffer layer of the base.

An embodiment of the present invention also provides a substrate, which is manufactured by the above-mentioned manufacturing method, the substrate includes a substrate and a buffer layer contacted on the substrate, and the buffer layer includes a plurality of stacked A sub-buffer layer, the thermal expansion coefficient of the buffer layer is smaller than the thermal expansion coefficient of the substrate.

An embodiment of the present invention also provides a transparent conductive substrate, including:

substrate as described above;

A transparent conductive layer is formed on the buffer layer of the substrate.

An embodiment of the present invention also provides a display substrate, which is characterized in that it includes:

substrate as described above;

Each film layer structure for display is arranged on the buffer layer of the base.

An electronic device is also provided in an embodiment of the present invention, using the above-mentioned substrate.

The beneficial effects of above-mentioned technical scheme of the present invention are as follows:

In the above technical scheme, the buffer layer with the required thickness is formed through multiple film-forming processes, the thickness of the sub-buffer layer formed by each film-forming process is relatively thin, and after the formation of each sub-buffer layer, a cooling treatment is performed, so that the substrate The overall temperature is always low, reducing the generation of internal stress. At the same time, since the thermal expansion coefficient of the buffer layer is smaller than that of the substrate, the buffer layer has better heat resistance, so that various functional films of electronic devices can be fabricated on the buffer layer in a high temperature environment, ensuring the film quality and Reduce the generation of internal stress in the film and improve the quality of electronic devices.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained according to these drawings without any creative effort.

Fig. 1 represents the perspective view of substrate in the embodiment of the present invention;

Fig. 2 represents the front view of Fig. 1;

Fig. 3-Fig. 5 represent the schematic diagram of the manufacturing process of the substrate in the embodiment of the present invention;

6 shows a perspective view of a transparent conductive substrate in an embodiment of the present invention;

Fig. 7 represents the front view of Fig. 6;

FIG. 8 shows a flowchart of a method for manufacturing a transparent conductive substrate in an embodiment of the present invention.

detailed description

The specific implementation manner of the present invention will be further described in detail below with reference to the drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

Embodiment one

For electronic devices, such as display devices, solar cells, etc., it is necessary to provide a substrate for carrying various functional film structures, and the quality of the substrate has a direct impact on the quality of the electronic device.

The quality of the substrate in the present invention specifically refers to the heat resistance of the substrate. Higher heat resistance can ensure the formation of a film on the substrate in a high temperature environment, improve the quality of the film formation, and reduce the generation of internal stress.

In this embodiment, a substrate and a manufacturing method thereof are provided, which are used to improve the heat resistance of the substrate.

As shown in FIGS. 1-5 , the manufacturing method includes the step of forming a buffer layer 1 on the surface of a substrate 10, and the step of forming the buffer layer 1 includes:

Forming a sub-buffer layer 11 on the surface of the substrate 10, and performing a cooling treatment on the sub-buffer layer 11;

The above steps are repeated to form a plurality of sub-buffer layers 11 . The buffer layer 1 is formed from the plurality of sub-buffer layers 11 . The coefficient of thermal expansion of the buffer layer 1 is smaller than that of the substrate 10 .

In the above manufacturing method, a buffer layer is formed on the substrate through multiple film forming processes until the thickness of the buffer layer reaches the requirement. Wherein, the thickness of the buffer layer is known, the thickness of each film formation is smaller than the final thickness of the buffer layer, and the final thickness is formed by stacking multiple film formations. That is, the thickness of the sub-buffer layer is smaller than the thickness of the buffer layer 1 , and the thickness of the stacked sub-buffer layers 11 is equal to the thickness of the buffer layer 1 .

It should be noted that the smaller the coefficient of thermal expansion of the material, the smaller its deformation when heated, and the better the heat resistance.

As shown in FIG. 1 and FIG. 2, the substrate prepared by the above manufacturing method includes a substrate 10 and a buffer layer 1 arranged in contact with the substrate 10. The buffer layer 1 includes a plurality of stacked sub-buffer layers 11, and the buffer layer The coefficient of thermal expansion of 1 is smaller than the coefficient of thermal expansion of the substrate 10 .

The technical proposal of the present invention forms the buffer layer of required thickness through multiple film-forming processes, and the thickness of the sub-buffer layer formed by each film-forming process is relatively thin, and after each sub-buffer layer is formed, the temperature is lowered, so that the substrate The overall temperature is always low, reducing the generation of internal stress. At the same time, since the thermal expansion coefficient of the buffer layer is smaller than that of the substrate, the buffer layer has better heat resistance, so that various functional films of electronic devices can be fabricated on the buffer layer in a high temperature environment, ensuring the film quality and Reduce the generation of internal stress in the film and improve the quality of electronic devices.

Wherein, the thicknesses of the multiple sub-buffer layers 11 may be uniform or inconsistent. In this embodiment, the thicknesses of the plurality of sub-buffer layers 11 are set to be the same, and the film-forming parameters are the same, such as the film-forming time, so as to simplify the manufacturing process of the buffer layers. In actual application, the thickness of the sub-buffer layer 11 can be set according to the temperature requirement and the thickness of the buffer layer 1, so as to prevent the overall temperature of the substrate after each sub-buffer layer 11 is formed from being high, resulting in greater internal stress. For example: the setting buffer layer 1 includes at least 4 sub-buffer layers 11 .

Specifically, the sub-buffer layer 11 can be formed by a magnetron sputtering film formation process, because the magnetron sputtering film formation process has the advantages of high speed, low temperature, large coating area and strong adhesion, and can realize rapid film formation in a relatively low temperature environment. Further reduce the generation of internal stress. Moreover, the adhesion of the film formation is strong, which can increase the bonding force between the substrate 10 and the buffer layer 1 , making it difficult for the buffer layer 1 to peel off from the substrate 10 .

The technical solution of the present invention is especially suitable for flexible substrates and their production, because the substrate of the flexible substrate is a polymer film, which has poor heat resistance, limits the film-forming temperature of various functional films of electronic devices, and reduces the film-forming quality. Moreover, relatively large internal stress will be generated, which will affect the quality of electronic devices. This technical problem can be well solved by the technical solution of the present invention. Of course, the technical solution of the present invention is also applicable to non-flexible substrates such as glass substrates and quartz substrates and their fabrication.

For a flexible substrate, the substrate 10 is a flexible substrate, and its material can be selected from one of PET, PC, PEN, and PI.

In order to improve the heat resistance of the substrate, the buffer layer 1 selects a material with a small thermal expansion coefficient, such as one of SiO ₂ , TiO ₂ , and CeO ₂ . Optionally, the material of each sub-buffer layer 11 is the same, so as to reduce the cost and simplify the manufacturing process of the buffer layer 1 .

After forming multiple sub-buffer layers 11 , it is necessary to lower the temperature of the sub-buffer layers 11 to reduce the generation of internal stress. Among them, there are many ways to achieve cooling, for example: ice water bath, ventilation.

As shown in FIGS. 3-5 , the steps for cooling the sub-buffer layer 11 in this embodiment are as follows:

The surface of the sub-buffer layer 11 is treated with an ion beam (corresponding to the line with the arrow in the drawing).

Specifically, Ar ⁺ ion beams may be used to treat the surface of the sub-buffer layer 11 .

In the above steps, the surface of the sub-buffer layer 11 is treated with ion beams to achieve cooling, and the cooling can be performed immediately after the film formation is completed, which has the advantages of high efficiency, quickness, and convenience. Moreover, after multiple depositions, each sub-buffer layer 11 is treated with an ion beam, so that a dense and uniform buffer layer 1 can be obtained. At the same time, after ion beam surface treatment, the effective surface area of the surface of the buffer layer 1 increases, the interlocking action between the thin film arranged on the buffer layer 1 and the interface of the buffer layer 1 is enhanced, and the interlayer bonding force is increased, so that the functions of the electronic device The film does not peel easily from the substrate. For flexible devices, greater interlayer bonding can also improve bending resistance. When the conductive layer is placed in contact with the buffer layer 1, due to the interaction between the electric dipoles at the interface between the buffer layer 1 and the conductive layer after ion beam treatment, it can promote the formation of polycrystalline state of the conductive layer and improve the performance of the conductive layer. conductivity.

In a specific embodiment, as shown in Fig. 1, Fig. 3-Fig. 5, the manufacturing method of the flexible substrate specifically includes:

Step S11, cleaning the flexible polymer film substrate 10;

Step S12 , as shown in FIG. 3 , deposit a sub-buffer layer 11 on the polymer film substrate 10 by magnetron sputtering film formation process, the deposition temperature is 100° C., the gas pressure is 1 Pa, and the deposition power is 200 W. When the thickness of the sub-buffer layer 11 is about 20nm, the surface of the sub-buffer layer 11 is treated with Ar ⁺ ion beam, the energy of the ion beam is 150eV, the incident angle is 80°, and the time is 10s;

Step S13 , repeating step S12 , as shown in FIG. 4 and FIG. 5 , until the thickness of the buffer layer 1 reaches 100 nm, as shown in FIG. 1 .

In another specific embodiment, as shown in Fig. 1, Fig. 3-Fig. 5, the manufacturing method of the flexible substrate specifically includes:

Step S21, cleaning the flexible polymer film substrate 10;

Step S22 , as shown in FIG. 3 , deposit a sub-buffer layer 11 on the polymer film substrate 10 by magnetron sputtering film formation process, the deposition temperature is 100° C., the gas pressure is 1 Pa, and the deposition power is 200 W. When the thickness of the sub-buffer layer 11 is about 20nm, the surface of the sub-buffer layer 11 is treated with Ar ⁺ ion beam, the ion beam energy is 100eV, the incident angle is 80°, and the time is 13s;

Step S23 , repeat step S22 , as shown in FIG. 4 and FIG. 5 , until the thickness of the buffer layer 1 reaches 100 nm, as shown in FIG. 1 .

In the above two embodiments, only two specific combinations of process parameters are provided. In the actual application process, those skilled in the art can easily think that each process parameter can be reasonably adjusted, which all belong to the protection scope of the present invention. The object of the present invention can be realized.

Those skilled in the art can easily deduce that the material of the buffer layer can also be a metal material or a transparent conductive material, and the conductive buffer layer can be prepared by the above-mentioned manufacturing method. Specifically, the conductive buffer layer is formed by using a magnetron sputtering film forming process. When the substrate is a transparent substrate, the conductive layer is made of a transparent conductive material, such as HIZO, ZnO, TiO ₂ , CdSnO, MgZnO, IGO, IZO, ITO or IGZO.

Embodiment two

As shown in FIGS. 6-8 , a method for manufacturing a transparent conductive substrate in this embodiment includes:

The base is formed by the manufacturing method in Example 1;

A transparent conductive layer 2 is formed on the buffer layer 1 of the substrate.

The transparent conductive substrate prepared by the above manufacturing method includes the substrate in the first embodiment, and the transparent conductive layer 2 disposed on the buffer layer 1 of the substrate.

In this embodiment, since the transparent conductive layer 2 is arranged in contact with the buffer layer 1 of the base, and the thermal expansion coefficient of the buffer layer 1 is large, it has better heat resistance, so that the transparent conductive layer 2 can be formed in a high temperature environment, ensuring The transparent conductive layer 2 has excellent properties. Moreover, the thermal expansion coefficient difference between the buffer layer 1 and the transparent conductive layer 2 is small, which reduces the generation of internal stress and improves the quality of the transparent conductive substrate.

The technical solution of the present invention is especially suitable for flexible transparent conductive substrates and their production, because the production of the buffer layer can greatly improve the heat resistance of the substrate, ensure the film-forming temperature of the transparent conductive layer, and improve the performance of the transparent conductive layer. Of course, the technical solution of the present invention is also applicable to non-flexible transparent conductive substrates and their manufacture, and non-flexible transparent conductive substrates can be selected from glass substrates, quartz substrates, and the like.

As for the substrate and its manufacturing process, reference may be made to the description in Embodiment 1, which will not be described in detail here.

Optionally, after forming each sub-buffer layer 11 of the buffer layer 1, the surface of the sub-buffer layer 11 is treated with an ion beam, which can increase the effective surface area of the buffer layer 1 surface, and strengthen the connection between the buffer layer 1 and the transparent conductive layer. The occlusion between the two interfaces increases the binding force between the buffer layer 1 and the transparent conductive layer 2, so that the transparent conductive layer 2 is not easily peeled off from the substrate. For flexible devices, greater interlayer bonding can also improve bending resistance. When the transparent conductive layer 2 is arranged in contact with the buffer layer 1, due to the interaction between the electric dipoles at the interface between the buffer layer 1 and the transparent conductive layer 2 after the ion beam treatment, the formation of the transparent conductive layer 2 can be promoted. crystalline state, improving the conductivity of the transparent conductive layer 2.

In a specific embodiment, as shown in Fig. 1, Fig. 3-Fig. 5, the manufacturing method of the transparent conductive substrate specifically includes:

Step S11, cleaning the flexible polymer film substrate 10;

Step S12 , as shown in FIG. 3 , deposit a sub-buffer layer 11 on the polymer film substrate 10 by magnetron sputtering film formation process, the deposition temperature is 100° C., the gas pressure is 1 Pa, and the deposition power is 200 W. When the thickness of the sub-buffer layer 11 is about 20nm, the surface of the sub-buffer layer 11 is treated with Ar ⁺ ion beam, the energy of the ion beam is 150eV, the incident angle is 80°, and the time is 10s;

Step S13 , repeating step S12 , as shown in FIG. 4 and FIG. 5 , until the thickness of the buffer layer 1 reaches 100 nm, as shown in FIG. 1 .

Step S14 , depositing a transparent conductive layer 2 on the buffer layer 1 by using a magnetron sputtering film forming process. The deposition temperature is 100° C., the gas pressure is 0.5 Pa, the deposition power is 100 W, and the thickness of the transparent conductive layer 2 is 70 nm.

The surface resistance of the flexible transparent conductive substrate prepared through the above steps S11-S14 is 19Ω/sq, and the light transmittance is 88%.

In another specific embodiment, as shown in Fig. 1, Fig. 3-Fig. 5, the manufacturing method of the transparent conductive substrate specifically includes:

Step S21, cleaning the flexible polymer film substrate 10;

Step S22 , as shown in FIG. 3 , deposit a sub-buffer layer 11 on the polymer film substrate 10 by magnetron sputtering film formation process, the deposition temperature is 100° C., the gas pressure is 1 Pa, and the deposition power is 200 W. When the thickness of the sub-buffer layer 11 is about 20nm, the surface of the sub-buffer layer 11 is treated with Ar ⁺ ion beam, the ion beam energy is 100eV, the incident angle is 80°, and the time is 13s;

Step S23, repeat step S22, see Figure 4 and Figure 5, until the thickness of the buffer layer 1 reaches 100nm, as shown in Figure 1;

Step S24 , depositing a transparent conductive layer 2 on the buffer layer 1 by using a magnetron sputtering film forming process. The deposition temperature is 100° C., the gas pressure is 0.5 Pa, the deposition power is 100 W, and the thickness of the transparent conductive layer 2 is 70 nm.

The surface resistance of the flexible transparent conductive substrate prepared through the above steps S21-S24 is 27Ω/sq, and the light transmittance is 86%.

Comparing the above two embodiments, it can be found that the power (energy/treatment time) of the ion beam treatment will affect the surface resistance and light transmittance of the transparent conductive substrate. Because the greater the power of ion beam treatment, the stronger the interaction between the electric dipoles of the buffer layer 1 and the transparent conductive layer 2 interface, which is conducive to promoting the formation of polycrystalline state of the transparent conductive layer 2 and improving the conductivity of the transparent conductive layer 2. sex. Moreover, the greater the power of the ion beam treatment, the more favorable it is to form a dense and uniform buffer layer 1, which will reduce the transmittance of light.

In the above two embodiments, only two specific combinations of process parameters are provided. In the actual application process, those skilled in the art can easily think that each process parameter can be reasonably adjusted, which all belong to the protection scope of the present invention. The object of the present invention can be realized.

Embodiment Three

In this embodiment, a method for manufacturing a display substrate is provided, including:

The base is formed by the manufacturing method in Example 1;

Various film layer structures for display are formed on the buffer layer of the base.

The display substrate manufactured by the above manufacturing method includes the substrate in Example 1, and various film layer structures for display disposed on the buffer layer of the substrate.

In this embodiment, since each film layer structure used for display is arranged on the buffer layer of the base, and the coefficient of thermal expansion of the buffer layer is relatively large, it has better heat resistance. When the conductive layer used for display is arranged on the buffer layer , the conductive layer for display can be formed in a high-temperature environment, ensuring that the conductive layer for display has excellent performance. Moreover, the thermal expansion coefficient difference between the buffer layer and the conductive layer for display is small, which reduces the generation of internal stress and improves the quality of the display substrate.

The technical solution of the present invention is especially suitable for flexible display substrates and their manufacture, because the manufacture of the buffer layer can greatly improve the heat resistance of the substrate, ensure the film-forming temperature of each film layer structure used for display, and improve the temperature of each film layer structure used for display. performance. Of course, the technical solution of the present invention is also applicable to non-flexible display substrates and their manufacture, and non-flexible display substrates can be selected from glass substrates, quartz substrates, and the like.

Taking a flexible organic light emitting diode display substrate as an example, the film layer structure for display includes an organic light emitting diode, and the step of forming the film layer structure for display on the buffer layer of the substrate specifically includes:

An organic light emitting diode is formed on the buffer layer of the base, and the bottom electrode of the organic light emitting diode is arranged in contact with the buffer layer.

In the organic light emitting diode display substrate formed through the above steps, the bottom electrode of the organic light emitting diode is arranged in contact with the buffer layer of the substrate, and the bottom electrode can be formed in a high temperature environment to ensure that the bottom electrode has excellent performance.

Further, after each sub-buffer layer of the buffer layer is formed, the surface of the sub-buffer layer is treated with an ion beam, which can increase the effective surface area of the buffer layer surface and enhance the interlocking effect between the buffer layer and the bottom electrode interface. , increasing the binding force between the buffer layer and the bottom electrode, making it difficult for the bottom electrode to peel off from the substrate, and improving the bending resistance of the display substrate. At the same time, due to the interaction between the electric dipoles at the interface between the buffer layer and the bottom electrode after the ion beam treatment, the bottom electrode can be promoted to form a polycrystalline state and the conductivity of the bottom electrode can be improved.

As for the substrate and its manufacturing process, reference may be made to the description in Embodiment 1, which will not be described in detail here.

Embodiment four

An electronic device is provided in this embodiment, and the electronic device can be a touch screen, a display device, a solar cell, etc., and the electronic device adopts the substrate in Embodiment 1, which improves the film-forming quality of each functional film layer of the electronic device , to ensure the performance of electronic devices and reduce the generation of internal stress in the film.

Specifically, for a display device, it also includes various display film layer structures disposed on the buffer layer of the base. Since the setting of the buffer layer improves the heat resistance of the substrate, it is possible to make the film structure for display in a high temperature environment, ensuring that each film structure has excellent performance, especially the film layer that is in contact with the buffer layer of the substrate. The structure has excellent performance. At the same time, it also reduces the generation of internal stress in the film and improves the quality of display products.

The display device is any product or component with a display function such as a liquid crystal display device, an OLED display device, electronic paper, a mobile phone, a tablet computer, a television notebook computer, a digital photo frame, a navigator, and the like.

For solar cells, it also includes a transparent front electrode, the front electrode contact is arranged on the buffer layer of the substrate, so that the front electrode can be formed in a high temperature environment, ensure that the front electrode has excellent performance, and reduce the film The generation of internal stress improves the quality of solar cells. Then an electron transport layer, a photosensitive layer, a hole transport layer, a back electrode and the like are sequentially prepared on the front electrode.

Of course, the technical solution of the present invention is also applicable to other electronic devices, which will not be listed here.

The above is only a preferred embodiment of the present invention, it should be pointed out that for those of ordinary skill in the art, without departing from the technical principle of the present invention, some improvements and replacements can also be made, these improvements and replacements It should also be regarded as the protection scope of the present invention.

Claims (17)

1. A method for making a substrate, characterized in that, comprising the step of forming a buffer layer on the surface of a substrate, the step of forming a buffer layer comprising: forming a sub-buffer layer on the surface of the substrate, and performing a cooling treatment on the sub-buffer layer; Repeating the above steps to form a plurality of sub-buffer layers, the buffer layer is formed by laminating the plurality of sub-buffer layers, and the coefficient of thermal expansion of the buffer layer is smaller than the coefficient of thermal expansion of the substrate. 2. The manufacturing method according to claim 1, characterized in that, the step of cooling the sub-buffer layer is specifically: The surface of the sub-buffer layer is treated with an ion beam. 3 . The manufacturing method according to claim 2 , wherein the surface of the sub-buffer layer is specifically treated with an Ar ⁺ ion beam. 4 . 4. The manufacturing method according to claim 1, characterized in that, the sub-buffer layer is formed by a magnetron sputtering film forming process. 5. The manufacturing method according to any one of claims 1-4, characterized in that, the material of the buffer layer is selected from one of SiO ₂ , TiO ₂ , and CeO ₂ . 6. The manufacturing method according to any one of claims 1-4, wherein the substrate is a flexible substrate. 7. The manufacturing method according to claim 6, wherein the material of the flexible substrate is selected from one of PET, PC, PEN, and PI. 8. A method for manufacturing a transparent conductive substrate, characterized in that a base is formed using the manufacturing method according to claims 1-7, and a transparent conductive layer is formed on the buffer layer of the base. 9. A method for manufacturing a display substrate, comprising: The base is formed by the manufacturing method described in claims 1-7; Various film layer structures for display are formed on the buffer layer of the base. 10. The manufacturing method according to claim 9, wherein the display substrate is an organic light emitting diode display substrate; The step of forming each film layer structure for display on the buffer layer of the substrate specifically includes: An organic light emitting diode is formed on the buffer layer of the base, and the bottom electrode of the organic light emitting diode is arranged in contact with the buffer layer. 11. A substrate, characterized in that it is manufactured by the manufacturing method according to claims 1-7, the substrate comprises a substrate and a buffer layer contacted on the substrate, the buffer layer comprises a plurality of The sub-buffer layers are stacked, and the thermal expansion coefficient of the buffer layer is smaller than the thermal expansion coefficient of the substrate. 12. The substrate according to claim 11, wherein the thicknesses of the plurality of sub-buffer layers are uniform. 13. A transparent conductive substrate, characterized in that, comprising: A substrate as claimed in claim 11 or 12; A transparent conductive layer is formed on the buffer layer of the substrate. 14. A display substrate, characterized in that it comprises: A substrate as claimed in claim 11 or 12; Each film layer structure for display is arranged on the buffer layer of the base. 15. An electronic device, characterized in that the substrate according to claim 11 or 12 is used. 16 . The electronic device according to claim 15 , wherein the electronic device is a display substrate, further comprising various display film layer structures disposed on the buffer layer of the base. 17 . 17 . The electronic device according to claim 15 , wherein the electronic device is a solar cell, and further comprises a transparent front electrode, and the front electrode is contacted and disposed on the buffer layer of the substrate.