[go: up one dir, main page]

CN106207976A - Overcurrent protection chip and overcurrent protection circuit of power supply - Google Patents

Overcurrent protection chip and overcurrent protection circuit of power supply Download PDF

Info

Publication number
CN106207976A
CN106207976A CN201510220733.0A CN201510220733A CN106207976A CN 106207976 A CN106207976 A CN 106207976A CN 201510220733 A CN201510220733 A CN 201510220733A CN 106207976 A CN106207976 A CN 106207976A
Authority
CN
China
Prior art keywords
memory module
overcurrent protection
potential
memory
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510220733.0A
Other languages
Chinese (zh)
Other versions
CN106207976B (en
Inventor
林愷
郑健铭
江谢伯州
刘建成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Weltrend Semiconductor Inc
Original Assignee
Weltrend Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Weltrend Semiconductor Inc filed Critical Weltrend Semiconductor Inc
Publication of CN106207976A publication Critical patent/CN106207976A/en
Application granted granted Critical
Publication of CN106207976B publication Critical patent/CN106207976B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

The invention provides an overcurrent protection chip and an overcurrent protection circuit of a power supply. The overcurrent protection chip comprises three input ends, a first memory module, a second memory module and a switching selection circuit. The three input terminals are respectively used for receiving the correction data, the first current load potential and the second current load potential. The switching selection circuit is used for comparing the correction data with the first current load potential and comparing the correction data with the second current load potential. Wherein the correction data is stored in one of the memory cells of the first memory module when the correction data corresponds to the first current load potential. When the correction data coincides with the second current load, the correction data is stored in one memory cell of the second memory module.

Description

电源供应器的过电流保护芯片及过电流保护电路Over-current protection chip and over-current protection circuit of power supply

技术领域technical field

本发明涉及一种电源供应器的过电流保护芯片及过电流保护电路,尤其涉及一种可设定多组过电流保护值的电源供应器的过电流保护芯片及过电流保护电路。The invention relates to an overcurrent protection chip and an overcurrent protection circuit of a power supply, in particular to an overcurrent protection chip and an overcurrent protection circuit of a power supply capable of setting multiple sets of overcurrent protection values.

背景技术Background technique

电源供应器用来供应电源给电子装置,为了避免电子装置的负载过大而超过电源供应器的安全负载范围,电源供应器通常会设置一过电流保护(overcurrent protection;OCP)电路,用来检测负载电流,并于负载电流高于负载上限时输出一过电流保护信号,以通知电源供应器进行相对应的保护措施,例如关机。The power supply is used to supply power to the electronic device. In order to prevent the electronic device from being overloaded beyond the safe load range of the power supply, the power supply is usually equipped with an overcurrent protection (OCP) circuit to detect the load. current, and output an over-current protection signal when the load current is higher than the upper limit of the load, so as to notify the power supply to take corresponding protection measures, such as shutting down.

请参考图1,图1为已知电源供应器的过电流保护电路10耦接于校正工具及负载机120时的示意图。过电流保护电路10设置于电源供应器中,用于提供电源供应器的过电流保护。过电流保护芯片100则是用以提供过电流保护值140,以设定过电流保护电路10于启动过电流保护机制时的电流值。当电源供应器所输出的电流超过所设定的过电流保护值140时,过电流保护电路10即会启动其过电流保护机制。为因应不同的电源供应器的过电流保护的需要,过电流保护芯片100被设计成可对其过电流保护值140进行校正。当进行过电流保护值140的校正时,过电流保护芯片100会与校正工具110及负载机120耦接,以使校正工具110及负载机120对过电流保护芯片100进行校正,并于完成校正时使过电流保护芯片100产生校正数据130。校正数据130会被存储在过电流保护芯片100当中,而当过电流保护芯片100出厂并被设置于电源供应器后,过电流保护芯片100即可依据所存储的校正数据130即时地产生过电流保护值140,以设定过电流保护电路10于启动过电流保护机制时的电流值。Please refer to FIG. 1 . FIG. 1 is a schematic diagram of a conventional power supply overcurrent protection circuit 10 coupled to a calibration tool and a load machine 120 . The overcurrent protection circuit 10 is disposed in the power supply for providing overcurrent protection of the power supply. The over-current protection chip 100 is used to provide an over-current protection value 140 for setting the current value of the over-current protection circuit 10 when the over-current protection mechanism is activated. When the output current of the power supply exceeds the set over-current protection value 140, the over-current protection circuit 10 will activate its over-current protection mechanism. In order to meet the over-current protection needs of different power supplies, the over-current protection chip 100 is designed to calibrate its over-current protection value 140 . When correcting the overcurrent protection value 140, the overcurrent protection chip 100 will be coupled with the calibration tool 110 and the load machine 120, so that the calibration tool 110 and the load machine 120 can calibrate the overcurrent protection chip 100, and complete the calibration Sometimes the overcurrent protection chip 100 generates the correction data 130 . The correction data 130 will be stored in the overcurrent protection chip 100, and when the overcurrent protection chip 100 leaves the factory and is installed in the power supply, the overcurrent protection chip 100 can generate an overcurrent in real time according to the stored correction data 130 The protection value 140 is used to set the current value of the over-current protection circuit 10 when the over-current protection mechanism is activated.

然而,因当过电流保护芯片100出厂后,被存储在过电流保护芯片100中的校正数据130即无法再更改,而导致当电源供应器厂于生产其电源供应器后须变更其规格、设计时,电源供应器内的过电流保护芯片100并无法再重新被校正以回收使用。再者,当电源供应器需要有多组的过电流保护设定时,因过电流保护芯片100只能提供一组过电流保护值140,而有不敷使用的情况。此外,若电源供应器有多组过电流保护值140需要校正时,负载机120必须配合多个过电流保护芯片100的校正顺序,而无法随意地变更其校正顺序,而缺乏弹性。However, since the correction data 130 stored in the overcurrent protection chip 100 cannot be changed after the overcurrent protection chip 100 leaves the factory, the power supply factory must change its specification and design after producing the power supply. , the overcurrent protection chip 100 in the power supply cannot be recalibrated for recycling. Furthermore, when the power supply needs multiple sets of over-current protection settings, the over-current protection chip 100 can only provide one set of over-current protection values 140 , which is not enough for use. In addition, if the power supply has multiple sets of over-current protection values 140 that need to be corrected, the load machine 120 must cooperate with the correcting sequence of the multiple over-current protection chips 100 , and the correcting sequence cannot be changed arbitrarily, which lacks flexibility.

发明内容Contents of the invention

本发明提供一种电源供应器的过电流保护芯片。过电流保护芯片包含第一输入端、第二输入端、第三输入端、第一存储器模块、第二存储器模块以及切换选择电路。第一输入端用以接收校正数据。第二输入端用以接收第一电流负载电位。第三输入端用以接收第二电流负载电位。第一存储器模块及第二存储器模块各包含至少一存储器单元,而每一存储器单元用以记录一过电流保护值。切换选择电路耦接于第一输入端、第二输入端及第三输入端,用以比较校正数据及第一电流负载电位,并比较校正数据及第二电流负载电位。其中当校正数据与第一电流负载电位相符时,校正数据被存储到第一存储器模块的一个存储器单元中。当校正数据与第二电流负载电位相符时,校正数据被存储到第二存储器模块的一个存储器单元中。The invention provides an overcurrent protection chip of a power supply. The overcurrent protection chip includes a first input terminal, a second input terminal, a third input terminal, a first memory module, a second memory module and a switch selection circuit. The first input terminal is used for receiving calibration data. The second input end is used for receiving the first current load potential. The third input end is used for receiving the second current load potential. Each of the first memory module and the second memory module includes at least one memory unit, and each memory unit is used to record an overcurrent protection value. The switching selection circuit is coupled to the first input terminal, the second input terminal and the third input terminal, and is used for comparing the calibration data with the first current load potential, and comparing the calibration data with the second current load potential. Wherein when the correction data corresponds to the first current load potential, the correction data is stored in a memory unit of the first memory module. When the correction data coincides with the second current load potential, the correction data is stored in a memory cell of the second memory module.

本发明还提供一种电源供应器的过电流保护电路。过电流保护电路包含多个过电流保护芯片,其中每一个过电流保护芯片包含第一输入端、第二输入端、第三输入端、第一存储器模块、第二存储器模块、切换选择电路、槽位比对单元、第一选择开关以及第二选择开关。第一输入端用以接收校正数据。第二输入端用以接收第一电流负载电位。第三输入端用以接收第二电流负载电位。第一存储器模块及第二存储器模块各包含至少一存储器单元,而每一存储器单元用以记录一过电流保护值。切换选择电路耦接于第一输入端、第二输入端及第三输入端,用以比较校正数据及第一电流负载电位,并比较校正数据及第二电流负载电位。其中当校正数据与第一电流负载电位相符时,校正数据被存储到第一存储器模块的一个存储器单元中。当校正数据与第二电流负载电位相符时,校正数据被存储到第二存储器模块的一个存储器单元中。槽位比对单元用以比对槽位比对命令及槽位位置,以输出致能信号并决定致能信号的电位。第一选择开关用以依据致能信号控制第一输入端至切换选择电路及第一存储器模块之间的电性连接。第二选择开关用以依据致能信号控制第一输入端至切换选择电路及第二存储器模块之间的电性连接。其中上述多个过电流保护芯片的槽位比对单元彼此耦接,而各自地接收槽位比对命令及槽位位置。The invention also provides an overcurrent protection circuit of the power supply. The overcurrent protection circuit includes a plurality of overcurrent protection chips, wherein each overcurrent protection chip includes a first input terminal, a second input terminal, a third input terminal, a first memory module, a second memory module, a switching selection circuit, a slot A bit comparison unit, a first selection switch and a second selection switch. The first input terminal is used for receiving calibration data. The second input end is used for receiving the first current load potential. The third input end is used for receiving the second current load potential. Each of the first memory module and the second memory module includes at least one memory unit, and each memory unit is used to record an overcurrent protection value. The switching selection circuit is coupled to the first input terminal, the second input terminal and the third input terminal, and is used for comparing the calibration data with the first current load potential, and comparing the calibration data with the second current load potential. Wherein when the correction data corresponds to the first current load potential, the correction data is stored in a memory unit of the first memory module. When the correction data coincides with the second current load potential, the correction data is stored in a memory cell of the second memory module. The slot comparing unit is used for comparing the slot comparing command and the slot position, so as to output the enable signal and determine the potential of the enable signal. The first selection switch is used for controlling the electrical connection between the first input end, the switching selection circuit and the first memory module according to the enable signal. The second selection switch is used for controlling the electrical connection between the first input end, the switching selection circuit and the second memory module according to the enabling signal. The slot comparison units of the plurality of overcurrent protection chips are coupled to each other, and receive slot comparison commands and slot positions respectively.

附图说明Description of drawings

图1为已知电源供应器的过电流保护电路耦接于校正工具及负载机时的示意图。FIG. 1 is a schematic diagram of a conventional overcurrent protection circuit of a power supply coupled to a calibration tool and a load machine.

图2为本发明一实施例的电源供应器的过电流保护电路耦接于校正工具及负载机时的示意图。FIG. 2 is a schematic diagram of an overcurrent protection circuit of a power supply coupled to a calibration tool and a load machine according to an embodiment of the present invention.

图3为本发明一实施例的过电流保护芯片的切换选择电路的示意图。FIG. 3 is a schematic diagram of a switching selection circuit of an overcurrent protection chip according to an embodiment of the present invention.

图4为本发明另一实施例的电源供应器的过电流保护电路耦接于校正工具及负载机时的示意图。4 is a schematic diagram of a power supply overcurrent protection circuit coupled to a calibration tool and a load machine according to another embodiment of the present invention.

图5为对图2的过电流保护芯片进行校正时的流程图。FIG. 5 is a flow chart of calibrating the overcurrent protection chip in FIG. 2 .

图6为对图4的多个过电流保护芯片进行校正时的流程图。FIG. 6 is a flow chart of calibrating the multiple overcurrent protection chips in FIG. 4 .

图7为对安装有图2的过电流保护芯片的电源供应器由校正设定到出厂的流程图。FIG. 7 is a flow chart of the power supply installed with the overcurrent protection chip shown in FIG. 2 from calibration to delivery.

【符号说明】【Symbol Description】

10、20、30 过电流保护电路10, 20, 30 Overcurrent protection circuit

110 校正工具110 correction tools

120 负载机120 load machine

130、130A、130B、130C、130D、DS 校正数据130, 130A, 130B, 130C, 130D, D S correction data

140、240A、240B、240C、240D 过电流保护值140, 240A, 240B, 240C, 240D overcurrent protection value

100、200、200_1、200_2 过电流保护芯片100, 200, 200_1, 200_2 overcurrent protection chip

210 切换选择电路210 switch selection circuit

212A、212B 负载比较单元212A, 212B load comparison unit

214 校正组选择器214 Calibration group selector

216 比较器216 Comparators

217 电位调整单元217 Potential adjustment unit

218 解码器218 decoder

220 槽位比对单元220 slot comparison unit

224A 第一存储器模块224A first memory module

224B 第二存储器模块224B Second memory module

230A、230B 重工选择器230A, 230B heavy duty selector

A1至AX、B1至BX 存储器单元A1 to AX, B1 to BX memory cells

EN1、EN2 致能信号E N1 , E N2 enable signal

IA1 负载电流I A1 load current

IA2 电流I A2 current

Iv1至Ivn 电流源Iv1 to Ivn current source

P1至P3 输入端P1 to P3 input

VA1 第一电流负载电位V A1 first current load potential

VA2 第一校正电流感应电位V A2 first correction current sense potential

VB1 第二电流负载电位V B1 second current load potential

VB2 第二校正电流感应电位V B2 second correction current sense potential

VC1 第三电流负载电位V C1 third current load potential

VC2 第三校正电流感应电位V C2 third correction current sense potential

VD1 第四电流负载电位V D1 fourth current load potential

VD2 第四校正电流感应电位V D2 fourth correction current sense potential

VS1 第一输出电平V S1 first output level

VS2 第二输出电平V S2 second output level

Vcs 电压输入端Vcs voltage input terminal

V1至Vn 开关控制信号V1 to Vn switch control signal

RA1、RA2、RB2、RC2、RD2 电阻R A1 , R A2 , R B2 , R C2 , R D2 resistors

S1、S2 槽位位置S1, S2 slot positions

SCOM 槽位比对命令S COM slot comparison command

SW1、SW2 选择开关SW 1 , SW 2 selection switch

SW、SWA、SWB 开关SW, SW A , SW B switches

S410至S460、S510至S550、S610至S670 步骤S410 to S460, S510 to S550, S610 to S670 steps

T1至T3 输入端T1 to T3 input

具体实施方式detailed description

请参考图2。图2为本发明一实施例的电源供应器的过电流保护电路20耦接于校正工具110及负载机120时的示意图。过电流保护电路20设置于电源供应器中,用于提供电源供应器多组的过电流保护值。在本实施例中,过电流保护电路20具有一个过电流保护芯片200,而过电流保护芯片200可提供电源供应器两组的过电流保护值240A及240B。然而,本发明并不以此为限,每一个过电流保护芯片200也可设计成提供三组或更多组的过电流保护值。Please refer to Figure 2. FIG. 2 is a schematic diagram of a power supply overcurrent protection circuit 20 coupled to a calibration tool 110 and a load machine 120 according to an embodiment of the present invention. The overcurrent protection circuit 20 is disposed in the power supply for providing multiple sets of overcurrent protection values for the power supply. In this embodiment, the overcurrent protection circuit 20 has an overcurrent protection chip 200 , and the overcurrent protection chip 200 can provide two sets of overcurrent protection values 240A and 240B for the power supply. However, the present invention is not limited thereto, and each overcurrent protection chip 200 can also be designed to provide three or more sets of overcurrent protection values.

藉由所提供的两组过电流保护值240A及240B,过电流保护芯片200即可设定过电流保护电路20于启动过电流保护机制时的两组电流值。当电源供应器的两组电源输出其输出电流有任一组超过所设定的过电流保护值240A或240B时,过电流保护电路20即会启动其过电流保护机制。同样地,为因应不同的电源供应器的过电流保护的规格需要,过电流保护芯片200被设计成可对其过电流保护值240A及240B分别进行校正。当进行过电流保护值240A及240B的校正时,过电流保护芯片200会与校正工具110及负载机120耦接,以使校正工具110及负载机120对过电流保护芯片200进行校正,并于完成校正时使过电流保护芯片200产生校正数据130A及130B。校正数据130A及130B会分别被存储在过电流保护芯片200的第一存储器模块224A及第二存储器模块224B中,而当过电流保护芯片200出厂并被设置于电源供应器后,过电流保护芯片200即可依据第一存储器模块224A及第二存储器模块224B所存储的校正数据130A及130B即时地产生过电流保护值240A及240B,以设定过电流保护电路20于启动过电流保护机制时的两组电流值。With the provided two sets of over-current protection values 240A and 240B, the over-current protection chip 200 can set two sets of current values when the over-current protection circuit 20 activates the over-current protection mechanism. When the output current of any of the two sets of power outputs of the power supply exceeds the set over-current protection value 240A or 240B, the over-current protection circuit 20 will activate its over-current protection mechanism. Likewise, in order to meet the over-current protection specifications of different power supplies, the over-current protection chip 200 is designed to calibrate its over-current protection values 240A and 240B respectively. When correcting the overcurrent protection values 240A and 240B, the overcurrent protection chip 200 will be coupled with the calibration tool 110 and the load machine 120, so that the calibration tool 110 and the load machine 120 can calibrate the overcurrent protection chip 200, and then When the calibration is completed, the overcurrent protection chip 200 is made to generate the calibration data 130A and 130B. The correction data 130A and 130B will be respectively stored in the first memory module 224A and the second memory module 224B of the overcurrent protection chip 200, and when the overcurrent protection chip 200 leaves the factory and is installed in the power supply, the overcurrent protection chip 200 can generate overcurrent protection values 240A and 240B in real time according to the correction data 130A and 130B stored in the first memory module 224A and the second memory module 224B, so as to set the overcurrent protection circuit 20 when the overcurrent protection mechanism is activated. Two sets of current values.

在本实施例中,过电流保护芯片200包含三个输入端P1至P3、第一存储器模块224A、第二存储器模块224B以及切换选择电路210。三个输入端P1至P3分别用以从校正工具110接收校正数据DS,并从负载机120接收第一电流负载电位VA1及第二电流负载电位VB1。切换选择电路210耦接过电流保护芯片200的三个输入端P1至P3,用以比较校正数据DS及第一电流负载电位VA1,并比较校正数据DS及第二电流负载电位VB1。在本实施例中,第一存储器模块224A及第二存储器模块224B各包含多个存储器单元A1至AX及B1至BX,而每一存储器单元用以记录一过电流保护值。其中,第一存储器模块224A及第二存储器模块224B所包含的存储器单元的数目可视需要调整,例如第一存储器模块224A及第二存储器模块224B可分别仅具有一个存储器单元。In this embodiment, the overcurrent protection chip 200 includes three input terminals P1 to P3 , a first memory module 224A, a second memory module 224B, and a switching selection circuit 210 . The three input terminals P1 to P3 are respectively used to receive the calibration data D S from the calibration tool 110 , and receive the first current load potential V A1 and the second current load potential V B1 from the load machine 120 . The switch selection circuit 210 is coupled to the three input terminals P1 to P3 of the overcurrent protection chip 200, and is used for comparing the calibration data D S with the first current load potential V A1 , and comparing the calibration data D S with the second current load potential V B1 . In this embodiment, each of the first memory module 224A and the second memory module 224B includes a plurality of memory units A1 to AX and B1 to BX, and each memory unit is used to record an overcurrent protection value. Wherein, the number of memory units included in the first memory module 224A and the second memory module 224B can be adjusted as needed, for example, the first memory module 224A and the second memory module 224B can have only one memory unit respectively.

此外,过电流保护芯片200的过电流保护校正是通过切换选择电路210对校正数据DS、第一电流负载电位VA1及第二电流负载电位VB1进行比较的方式来达成。详言之,在对过电流保护芯片200进行过电流保护校正的过程中,在尚未完成电流保护芯片200的校正之前,校正工具110会持续地输出不同的校正数据DS,而当校正数据DS与第一电流负载电位VA1相符时,即完成过电流保护值240A的校正;且当校正数据DS与第二电流负载电位VB1相符时,即完成过电流保护值240B的校正。至于如何判断校正数据DS是否与负载机120所提供的电流负载电位(如VA1和/或VB1)相符,则可参考申请人于2012年10月26日所提出的第101139698号专利申请案,或是稍后参考对于图3的说明。此外,当校正数据DS与第一电流负载电位VA1相符时(如:此时的校正数据DS为校正数据130A),校正数据DS会被存储到第一存储器模块224A的存储器单元A1至AX中的一个存储器单元;而当校正数据DS与第二电流负载电位VB1相符时(如:此时的校正数据DS为校正数据130B),校正数据DS会被存储到第二存储器模块224B的存储器单元B1至BX中的一个存储器单元。之后,过电流保护芯片200即可依据分别存储于第一存储器模块224A及第二存储器模块224B的校正数据,输出两组过电流保护值240A及240B。由于过电流保护芯片200可提供两组的电流保护值240A及240B,故相较于已知技术中的过电流保护芯片100只能提供一组过电流保护值140,过电流保护芯片200更适合用于可提供多组电力输出(如多组不同的电压)的电源供应器。此外,由于可各别地设定负载机120所提供的第一电流负载电位VA1及第二电流负载电位VB1,且当校正数据DS与第一电流负载电位VA1或第二电流负载电位VB1相符时,即完成过电流保护值240A或240B的校正,故过电流保护芯片200所要校正的电流保护值240A及240B的先后顺序可依据实际情况而有所不同,而不受特定校正顺序的限制。详言之,可以先完成电流保护值240A的校正再完成电流保护值240B的校正,亦或是先完成电流保护值240B的校正再完成电流保护值240A的校正。另外,倘若第一电流负载电位VA1被设定成与第二电流负载电位VB1一样的话,则可同时完成电流保护值240A及240B的设定。In addition, the overcurrent protection correction of the overcurrent protection chip 200 is achieved by switching the selection circuit 210 to compare the correction data D S , the first current load potential V A1 and the second current load potential V B1 . In detail, during the process of overcurrent protection calibration for the overcurrent protection chip 200, before the calibration of the current protection chip 200 is completed, the calibration tool 110 will continuously output different calibration data D S , and when the calibration data D When S matches the first current load potential V A1 , the correction of the overcurrent protection value 240A is completed; and when the correction data D S matches the second current load potential V B1 , the correction of the overcurrent protection value 240B is completed. As for how to judge whether the correction data D S is consistent with the current load potential (such as V A1 and/or V B1 ) provided by the load machine 120, please refer to the patent application No. 101139698 filed by the applicant on October 26, 2012 scheme, or refer to the description of Figure 3 later. In addition, when the corrected data D S matches the first current load potential V A1 (for example, the corrected data D S at this time is the corrected data 130A), the corrected data D S will be stored in the memory unit A1 of the first memory module 224A. to a memory cell in AX; and when the corrected data D S matches the second current load potential V B1 (for example: the corrected data D S at this time is the corrected data 130B), the corrected data D S will be stored in the second One of the memory cells B1 to BX of the memory module 224B. After that, the overcurrent protection chip 200 can output two sets of overcurrent protection values 240A and 240B according to the calibration data respectively stored in the first memory module 224A and the second memory module 224B. Since the overcurrent protection chip 200 can provide two sets of current protection values 240A and 240B, compared with the overcurrent protection chip 100 in the prior art, which can only provide one set of overcurrent protection values 140, the overcurrent protection chip 200 is more suitable Used for power supplies that can provide multiple sets of power outputs (such as multiple sets of different voltages). In addition, since the first current load potential V A1 and the second current load potential V B1 provided by the load machine 120 can be set separately, and when the correction data D S and the first current load potential V A1 or the second current load When the potential V B1 matches, the correction of the overcurrent protection value 240A or 240B is completed. Therefore, the sequence of the current protection value 240A and 240B to be corrected by the overcurrent protection chip 200 may vary according to the actual situation, and is not subject to specific correction. order constraints. In detail, the calibration of the current protection value 240A can be completed first and then the calibration of the current protection value 240B, or the calibration of the current protection value 240B can be completed first and then the calibration of the current protection value 240A can be completed. In addition, if the first current load potential V A1 is set to be the same as the second current load potential V B1 , the setting of the current protection values 240A and 240B can be completed at the same time.

在本发明一实施例中,切换选择电路210包含两个负载比较单元212A及212B、校正组选择器214以及两个开关SWA及SWB。负载比较单元212A及212B分别通过电阻RA2及RB2耦接于电压输入端Vcs。负载比较单元212A可依据校正数据DS调整负载比较单元212A的第一校正电流感应电位VA2。类似地,负载比较单元212B可依据校正数据DS调整负载比较单元212B的第二校正电流感应电位VB2。至于负载比较单元212A及212B如何依据校正数据DS分别调整第一校正电流感应电位VA2及第二校正电流感应电位VB2,下面将会有进一步的说明。此外,开关SWA用以控制校正工具110与第一存储器模块224A之间的电性连接,而开关SWB用以控制校正工具110与第二存储器模块224B之间的电性连接。校正组选择器214耦接于两负载比较单元212A及212B的输出端。其中当第一校正电流感应电位VA2等于第一电流负载电位VA1时,校正组选择器214开启SWA,以使校正数据DS被存储到第一存储器模块224A的一个存储器单元中。类似地,当第二校正电流感应电位VB2等于第二电流负载电位VB1时,校正组选择器214开启SWB,以使校正数据DS被存储到第二存储器模块224B的一个存储器单元中。In an embodiment of the present invention, the switch selection circuit 210 includes two load comparison units 212A and 212B, a correction group selector 214 and two switches SW A and SW B . The load comparison units 212A and 212B are coupled to the voltage input terminal Vcs through resistors RA2 and RB2 respectively. The load comparison unit 212A can adjust the first calibration current sense potential V A2 of the load comparison unit 212A according to the calibration data D S . Similarly, the load comparing unit 212B can adjust the second corrected current sense potential V B2 of the load comparing unit 212B according to the corrected data D S . As for how the load comparing units 212A and 212B respectively adjust the first calibration current-sensing potential V A2 and the second calibration current-sensing potential V B2 according to the calibration data D S , further description will be given below. In addition, the switch SW A is used to control the electrical connection between the calibration tool 110 and the first memory module 224A, and the switch SW B is used to control the electrical connection between the calibration tool 110 and the second memory module 224B. The calibration group selector 214 is coupled to the output terminals of the two load comparison units 212A and 212B. When the first calibration current induction potential V A2 is equal to the first current load potential V A1 , the calibration group selector 214 turns on SW A so that the calibration data D S is stored in a memory unit of the first memory module 224A. Similarly, when the second correction current sensing potential V B2 is equal to the second current load potential V B1 , the correction group selector 214 turns on SW B so that the correction data DS is stored in a memory unit of the second memory module 224B .

以下将就如何判断校正数据DS是否与负载机120所提供的电流负载电位(如VA1和/或VB1)相符作进一步的说明。请参考图3,图3为本发明一实施例的过电流保护芯片的切换选择电路212A的示意图。负载比较单元212A耦接于电阻RA1及RA2,并包含三个输入端T1至T3、比较器216、电位调整单元217以及解码器218。其中,三个输入端T1至T3分别耦接于过电流保护芯片200的输入端P2、电压输入端Vcs及输入端P1,以分别接收第一电流负载电位VA1、系统电压以及校正数据DS。电阻RA1(电流检测电阻)的第一端耦接至电压输入端Vcs,而电阻RA1的第二端耦接至负载机120。电阻RA2的第一端耦接至电压输入端Vcs。输入端T1所接收的第一电流负载电位VA1亦为电阻RA1的第二端的电压信号。由于负载电流IA1会流经电阻RA1,因此电阻RA1的第一端及第二端之间的电压降会正比于负载电流IA1的大小,所以电阻RA1的第二端的电压信号(即第一电流负载电位VA1)可作为负载电流检测信号。输入端T2则用以接收第一校正电流感应电位VA2,亦即电阻RA2的第二端的电压信号。第一校正电流感应电位VA2的大小由电位调整单元217所决定。比较器216的第一输入端耦接至输入端T1,比较器216的第二输入端耦接至输入端T2,比较器216用以比较第一电流负载电位VA1及第一校正电流感应电位VA2以在其输出端输出第一输出电平VS1。在本实施例中,当第一电流负载电位VA1低于第一校正电流感应电位VA2时,第一输出电平VS1从低电压电平升到高电压电平,亦即在输出端输出一过电流保护信号,以通知电源供应器进行相对应的保护措施,例如关机或其他操作等。How to determine whether the calibration data DS is consistent with the current load potential (such as V A1 and/or V B1 ) provided by the load machine 120 will be further described below. Please refer to FIG. 3 , which is a schematic diagram of a switching selection circuit 212A of an overcurrent protection chip according to an embodiment of the present invention. The load comparison unit 212A is coupled to the resistors R A1 and R A2 , and includes three input terminals T1 to T3 , a comparator 216 , a potential adjustment unit 217 and a decoder 218 . Wherein, the three input terminals T1 to T3 are respectively coupled to the input terminal P2, the voltage input terminal Vcs and the input terminal P1 of the overcurrent protection chip 200 to respectively receive the first current load potential V A1 , the system voltage and the calibration data D S . A first end of the resistor R A1 (current detection resistor) is coupled to the voltage input terminal Vcs, and a second end of the resistor R A1 is coupled to the load machine 120 . A first end of the resistor R A2 is coupled to the voltage input end Vcs. The first current load potential V A1 received by the input terminal T1 is also the voltage signal of the second terminal of the resistor R A1 . Since the load current I A1 will flow through the resistor R A1 , the voltage drop between the first terminal and the second terminal of the resistor R A1 will be proportional to the magnitude of the load current I A1 , so the voltage signal at the second terminal of the resistor R A1 ( That is, the first current load potential V A1 ) can be used as a load current detection signal. The input terminal T2 is used for receiving the first calibration current sensing potential V A2 , that is, the voltage signal of the second terminal of the resistor R A2 . The magnitude of the first correction current-induced potential V A2 is determined by the potential adjustment unit 217 . The first input terminal of the comparator 216 is coupled to the input terminal T1, the second input terminal of the comparator 216 is coupled to the input terminal T2, and the comparator 216 is used for comparing the first current load potential V A1 and the first correction current sense potential V A2 outputs the first output level V S1 at its output terminal. In this embodiment, when the first current load potential V A1 is lower than the first correction current induction potential V A2 , the first output level V S1 rises from a low voltage level to a high voltage level, that is, at the output terminal Outputting an over-current protection signal to notify the power supply to take corresponding protection measures, such as shutdown or other operations.

电位调整单元217耦接于输入端T2,在本实施例中,电位调整单元217包含多个电流源Iv1至Ivn以及多个开关SW。多个开关SW分别耦接至多个电流源Iv1至Ivn及接地端之间,用以根据开关控制信号V1至Vn进行开启与关闭,以控制流经电阻RA2的电流IA2的大小,进而调整第一校正电流感应电位VA2。解码器218用以根据接收到的校正数据DS输出多个开关控制信号V1至Vn至多个开关SW,以控制多个开关SW的开启与关闭。举例来说,在本发明电源供应器的过电流保护设定状态中,校正工具110会提供一预定负载,使通过电阻RA1的负载电流IA1为负载上限。校正工具110会经由输入端T3传送校正数据DS至解码器218。校正数据DS包含多个设定值,每个设定值可被解码器218解码为多个开关控制信号V1至Vn,以控制多个开关SW的开启与关闭,并进而控制流经电阻RA2的电流IA2的大小(亦即控制第一校正电流感应电位VA2)。电位调整单元217根据多个设定值逐渐调整第一校正电流感应电位VA2,直到比较器216所输出的第一输出电平VS1转态时(例如从低电压电平升到高电压电平,或从高电压电平降到低电压电平),此时代表第一校正电流感应电位VA2等于或相当接近负载上限时的电压电平,第一输出电平VS1可反馈至校正工具110以使校正工具110可得知第一输出电平VS1的转态时机,并将相对应的校正数据DS写入并存储在第一存储器模块224A中,而成为校正数据130A。至于负载比较单元212B的第二输出电平VS2的转态方式,因与负载比较单元212A的第一输出电平VS1的转态方式类似,故不再赘述。The potential adjustment unit 217 is coupled to the input terminal T2. In this embodiment, the potential adjustment unit 217 includes a plurality of current sources Iv1 to Ivn and a plurality of switches SW. A plurality of switches SW are respectively coupled between a plurality of current sources Iv1 to Ivn and the ground terminal, and are used to turn on and off according to the switch control signals V1 to Vn, so as to control the magnitude of the current I A2 flowing through the resistor R A2 , and then adjust The first corrected current-induced potential V A2 . The decoder 218 is used to output a plurality of switch control signals V1 to Vn to the plurality of switches SW according to the received correction data D S , so as to control the opening and closing of the plurality of switches SW. For example, in the overcurrent protection setting state of the power supply of the present invention, the calibration tool 110 will provide a predetermined load, so that the load current I A1 passing through the resistor R A1 is the upper limit of the load. The calibration tool 110 transmits the calibration data DS to the decoder 218 via the input terminal T3. The correction data D S includes a plurality of setting values, and each setting value can be decoded by the decoder 218 into a plurality of switch control signals V1 to Vn, so as to control the opening and closing of the plurality of switches SW, and further control the flow through the resistor R The magnitude of the current I A2 of A2 (that is, to control the first correction current induction potential V A2 ). The potential adjustment unit 217 gradually adjusts the first correction current induction potential V A2 according to multiple set values until the first output level V S1 output by the comparator 216 transitions (for example, from a low voltage level to a high voltage level). level, or drop from a high voltage level to a low voltage level), at this time it represents the voltage level when the first correction current sensing potential V A2 is equal to or quite close to the upper limit of the load, and the first output level V S1 can be fed back to the correction The tool 110 enables the calibration tool 110 to know the transition timing of the first output level V S1 , and writes and stores the corresponding calibration data D S in the first memory module 224A to become the calibration data 130A. As for the transition mode of the second output level V S2 of the load comparison unit 212B, since it is similar to the transition mode of the first output level V S1 of the load comparison unit 212A, it will not be repeated here.

在本发明一实施例中,过电流保护芯片200可还包含两个重工选择器230A及230B。重工选择器230A用以从第一存储器模块224A的多个存储器单元A1至AX中选出第一存储器模块224A所存储的最近一笔校正数据,而重工选择器230B则用以从第二存储器模块224B的多个存储器单元B1至BX中选出第二存储器模块224B所存储的最近一笔校正数据。换句话说,重工选择器230A及230B只会分别从第一存储器模块224A及第二存储器模块224B选出最新记录的校正数据,而其他旧的校正数据并不会被选出。当重工选择器230A及230B分别选出最新记录的校正数据后,过电流保护电路20即可依据所选出的校正数据产生上述的两组过电流保护值240A及240B。此外,值得注意地,重工选择器230A及230B是分别因应第一存储器模块224A及第二存储器模块224B有多个存储器单元A1至AX及B1至BX而设置的。换句话说,在本发明其他实施例中,倘若第一存储器模块224A及第二存储器模块224B各仅有一个存储器单元的话,则不必设置重工选择器230A及230B。In an embodiment of the present invention, the overcurrent protection chip 200 may further include two rework selectors 230A and 230B. The rework selector 230A is used to select the latest correction data stored in the first memory module 224A from the plurality of memory units A1 to AX of the first memory module 224A, and the rework selector 230B is used to select The latest correction data stored in the second memory module 224B is selected from the plurality of memory units B1 to BX of the memory module 224B. In other words, the rework selectors 230A and 230B will only select the latest recorded calibration data from the first memory module 224A and the second memory module 224B respectively, while other old calibration data will not be selected. After the rework selectors 230A and 230B respectively select the latest recorded calibration data, the overcurrent protection circuit 20 can generate the above two sets of overcurrent protection values 240A and 240B according to the selected calibration data. In addition, it is worth noting that the rework selectors 230A and 230B are respectively set in response to the first memory module 224A and the second memory module 224B having a plurality of memory units A1 to AX and B1 to BX. In other words, in other embodiments of the present invention, if the first memory module 224A and the second memory module 224B each have only one memory unit, the rework selectors 230A and 230B do not need to be provided.

此外,虽然在本实施例中的电流保护芯片200设计成提供两组的过电流保护值240A及240B。然而,本发明并不以此为限,每一个过电流保护芯片200也可设计成提供三组或更多组的过电流保护值。其中,每增加一组过电流保护值,只需再配置一个负载比较单元及存储器模块,并使负载机120再提供另一电流负载电位至此额外配置的负载比较单元,再完成对应的布线(如:开关控制、信号传输…等)即可。详言之,倘若在本发明一实施例中,电流保护芯片被设计成可提供三组电流保护值的话,则电流保护芯片除了上述的三个输入端P1至P3之外,可再另新增一个输入端以接收负载机120所提供的第三电流负载电位。此外,切换选择电路210可再包含另一个负载比较单元,用以比较校正数据Ds及上述的第三电流负载电位,而当校正数据Ds与上述的第三电流负载电位相符时,校正数据Ds即被存储到上述所额外配置的存储器模块的一个存储器单元中。单一过电流保护芯片提供四组或四组以上的过电流保护值的电路设置也可以以此类推。In addition, although the current protection chip 200 in this embodiment is designed to provide two sets of over-current protection values 240A and 240B. However, the present invention is not limited thereto, and each overcurrent protection chip 200 can also be designed to provide three or more sets of overcurrent protection values. Wherein, each time a group of overcurrent protection values is added, it is only necessary to configure a load comparison unit and a memory module, and make the load machine 120 provide another current load potential to the additionally configured load comparison unit, and then complete the corresponding wiring (such as : switch control, signal transmission, etc.) can be. In detail, if in an embodiment of the present invention, the current protection chip is designed to provide three sets of current protection values, then the current protection chip can be additionally added in addition to the above-mentioned three input terminals P1 to P3 An input terminal is used to receive the third current load potential provided by the load machine 120 . In addition, the switching selection circuit 210 may further include another load comparison unit for comparing the correction data Ds with the above-mentioned third current load potential, and when the correction data Ds matches the above-mentioned third current load potential, the correction data Ds is It is stored in one memory unit of the above-mentioned additionally configured memory module. A single overcurrent protection chip can provide four or more sets of circuit settings for overcurrent protection values, and so on.

在本发明一实施例中,过电流保护芯片200可还包含槽位比对单元220以及两个选择开关SW1及SW2。槽位比对单元220主要是用来与其他的过电流保护芯片200并接,以扩增电源供应器可校正的电力输出的组数,以下将以图4来作说明。请参考图4,图4为本发明另一实施例的电源供应器的过电流保护电路30耦接于校正工具110及负载机120时的示意图。过电流保护电路30包含两个过电流保护芯片200_1及200_2。过电流保护芯片200_1及200_2与图2中的过电流保护芯片200的电路结构是一样的。其中,过电流保护芯片200_1用以依据校正数据DS、第一电流负载电位VA1及第二电流负载电位VB1产生两组过电流保护值240A及240B,而过电流保护芯片200_2则是用以依据校正数据DS、第三电流负载电位VC1及第四电流负载电位VD1产生两组过电流保护值240C及240D。基本上,过电流保护芯片200_1的操作方式与图2中的过电流保护芯片200的操作方式一样。至于过电流保护芯片200_2其操作方式亦类似,只是过电流保护芯片200_2所输入的是第三电流负载电位VC1及第四电流负载电位VD1,并产生校正数据130C及130D及对应地输出另外两组的过电流保护值240C及240D。此外,过电流保护芯片200_2的负载比较单元212A及212B则分别通过电阻RC2及RD2耦接于电压输入端Vcs。过电流保护芯片200_2的负载比较单元212A可依据校正数据DS调整第三校正电流感应电位VC2,而过电流保护芯片200_2的负载比较单元212B可依据校正数据DS调整第四校正电流感应电位VD2。由于过电流保护芯片200_1及200_2的操作方式与过电流保护芯片200类似,故对于过电流保护芯片200_1及200_2的操作方式,在以下说明中将只对槽位比对单元220及两个选择开关SW1及SW2的部分作说明,而其他元件的操作方式将不再赘述。In an embodiment of the present invention, the overcurrent protection chip 200 may further include a slot comparison unit 220 and two selection switches SW 1 and SW 2 . The slot comparison unit 220 is mainly used for parallel connection with other overcurrent protection chips 200 to increase the number of power output groups that can be corrected by the power supply, which will be described below with reference to FIG. 4 . Please refer to FIG. 4 . FIG. 4 is a schematic diagram of a power supply overcurrent protection circuit 30 coupled to a calibration tool 110 and a load machine 120 according to another embodiment of the present invention. The overcurrent protection circuit 30 includes two overcurrent protection chips 200_1 and 200_2. The circuit structure of the overcurrent protection chips 200_1 and 200_2 is the same as that of the overcurrent protection chip 200 in FIG. 2 . Wherein, the overcurrent protection chip 200_1 is used to generate two sets of overcurrent protection values 240A and 240B according to the calibration data D S , the first current load potential V A1 and the second current load potential V B1 , while the overcurrent protection chip 200_2 is used for generating two sets of overcurrent protection values 240A and 240B. Two sets of overcurrent protection values 240C and 240D are generated according to the calibration data D S , the third current load potential V C1 and the fourth current load potential V D1 . Basically, the operation of the over-current protection chip 200_1 is the same as that of the over-current protection chip 200 in FIG. 2 . As for the overcurrent protection chip 200_2, its operation method is also similar, except that the input of the overcurrent protection chip 200_2 is the third current load potential V C1 and the fourth current load potential V D1 , and generates calibration data 130C and 130D and correspondingly outputs the other The overcurrent protection values of the two groups are 240C and 240D. In addition, the load comparison units 212A and 212B of the overcurrent protection chip 200_2 are coupled to the voltage input terminal Vcs through resistors R C2 and R D2 respectively. The load comparison unit 212A of the overcurrent protection chip 200_2 can adjust the third correction current sensing potential V C2 according to the correction data D S , and the load comparison unit 212B of the overcurrent protection chip 200_2 can adjust the fourth correction current sensing potential according to the correction data D S V D2 . Since the operation mode of the over-current protection chips 200_1 and 200_2 is similar to that of the over-current protection chip 200, so for the operation mode of the over-current protection chips 200_1 and 200_2, only the slot comparison unit 220 and the two selection switches will be described in the following description Parts of SW 1 and SW 2 will be described, and the operation methods of other components will not be repeated.

过电流保护芯片200_1及200_2会接收槽位比对命令SCOM及槽位位置S1和S2,并比较槽位比对命令SCOM及槽位位置S1和S2,以分别输出致能信号EN1及EN2,及决定致能信号EN1及EN2的电位。在本发明一实施例中,可藉由对过电流保护芯片200_1及200_2的槽位比对单元220的多个引脚的状态(例如:是否接地或耦接至特定电压)进行设置,以分别地设定槽位位置S1和S2。此外,当收槽位比对命令SCOM与槽位位置S1一致时,致能信号EN1会为第一电位,以开启过电流保护芯片200_1的选择开关SW1及SW2。当收槽位比对命令SCOM与槽位位置S1不一致时,致能信号EN1则为第二电位,以关闭过电流保护芯片200_1的选择开关SW1及SW2。类似地,当收槽位比对命令SCOM与槽位位置S2一致时,致能信号EN2会为第一电位,以开启过电流保护芯片200_2的选择开关SW1及SW2。当收槽位比对命令SCOM与槽位位置S2不一致时,致能信号EN2则为第二电位,以关闭过电流保护芯片200_2的选择开关SW1及SW2。因此,过电流保护芯片200_1的选择开关SW1会依据致能信号EN1控制校正工具110至切换选择电路210及第一存储器模块224A之间的电性连接,而过电流保护芯片200_1的选择开关SW2会依据致能信号EN1控制校正工具110至切换选择电路210及第二存储器模块224B之间的电性连接。类似地,过电流保护芯片200_2的选择开关SW1会依据致能信号EN2控制校正工具110至过电流保护芯片200_2的切换选择电路210及第一存储器模块224A之间的电性连接,而过电流保护芯片200_1的选择开关SW2会依据致能信号EN2控制校正工具110至过电流保护芯片200_2的切换选择电路210及第二存储器模块224B之间的电性连接。因此,藉由上述串接多个过电流保护芯片的方式,即可扩增电源供应器可校正的电力输出的组数。此外,图4中虽以串接两颗过电流保护芯片200_1及200_2的方式作说明,但本发明并不以此为限。换句话说,通过上述比较槽位比对命令SCOM及多个电流保护芯片的槽位位置的方式,本发明可另应用于串接三颗或更多颗过电流保护芯片的电源供应器中。The overcurrent protection chips 200_1 and 200_2 will receive the slot comparison command S COM and the slot positions S1 and S2, and compare the slot comparison command S COM and the slot positions S1 and S2 to output enable signals E N1 and S2 respectively. E N2 , and determine the potentials of the enabling signals E N1 and E N2 . In one embodiment of the present invention, the states of multiple pins of the comparison unit 220 (for example: whether to be grounded or coupled to a specific voltage) of the overcurrent protection chips 200_1 and 200_2 can be set to respectively Set the slot positions S1 and S2 accordingly. In addition, when the slot-comparison command S COM is consistent with the slot position S1 , the enabling signal E N1 is at the first potential to turn on the selection switches SW 1 and SW 2 of the over-current protection chip 200_1 . When the slot position comparison command S COM is inconsistent with the slot position S1 , the enable signal E N1 is at the second potential to turn off the selection switches SW 1 and SW 2 of the overcurrent protection chip 200_1 . Similarly, when the slot-comparison command S COM is consistent with the slot position S2 , the enable signal EN2 is at the first potential to turn on the selection switches SW 1 and SW 2 of the over-current protection chip 200_2 . When the slot position comparison command S COM is inconsistent with the slot position S2 , the enable signal EN2 is at the second potential to turn off the selection switches SW 1 and SW 2 of the overcurrent protection chip 200_2 . Therefore, the selection switch SW1 of the overcurrent protection chip 200_1 controls the calibration tool 110 to switch the electrical connection between the selection circuit 210 and the first memory module 224A according to the enable signal EN1, and the selection switch SW1 of the overcurrent protection chip 200_1 The SW 2 controls the electrical connection between the calibration tool 110 and the switch selection circuit 210 and the second memory module 224B according to the enable signal E N1 . Similarly, the selection switch SW1 of the overcurrent protection chip 200_2 controls the electrical connection between the calibration tool 110 and the switching selection circuit 210 and the first memory module 224A of the overcurrent protection chip 200_2 according to the enable signal EN2, and The selection switch SW2 of the current protection chip 200_1 controls the electrical connection between the calibration tool 110 and the switching selection circuit 210 of the overcurrent protection chip 200_2 and the second memory module 224B according to the enable signal E N2 . Therefore, by connecting a plurality of overcurrent protection chips in series, the number of power output groups that can be corrected by the power supply can be expanded. In addition, although two overcurrent protection chips 200_1 and 200_2 are connected in series for illustration in FIG. 4 , the present invention is not limited thereto. In other words, the present invention can be further applied to a power supply with three or more overcurrent protection chips connected in series through the above method of comparing the slots with the command S COM and the slot positions of a plurality of current protection chips. .

请参考图5,图5为对图2的过电流保护芯片200进行校正时的流程图。在步骤S410中,通过校正工具110设定校正目标组别,以决定负载机120后续输出至校正目标的电流负载电位。在步骤S420中,通过负载机120给予校正目标电流负载电位。在步骤S430中,藉由切换选择电路210判断应校正的组别,以决定后续校正数据DS应该存储至存储器模块224A及224B中的哪一个存储器模块。在步骤S440中,藉由负载比较单元212A或212B对应校正的组别进行校正。在步骤S450中,通过校正工具110,判断是否还有其他组别需要校正。若还有其他组别需要校正,则回到步骤S410;反之,则完成过电流保护芯片200的校正(步骤S460)。Please refer to FIG. 5 , which is a flow chart of calibrating the overcurrent protection chip 200 in FIG. 2 . In step S410 , the calibration target group is set by the calibration tool 110 to determine the current load potential that the load machine 120 subsequently outputs to the calibration target. In step S420 , the load potential of the corrected target current is given by the load machine 120 . In step S430, the group to be corrected is judged by switching the selection circuit 210 to determine which memory module among the memory modules 224A and 224B the subsequent corrected data D S should be stored in. In step S440, the load comparison unit 212A or 212B performs calibration corresponding to the corrected group. In step S450, through the calibration tool 110, it is determined whether there are other groups to be corrected. If there are other groups to be calibrated, go back to step S410; otherwise, complete the calibration of the overcurrent protection chip 200 (step S460).

请参考图6,图6为对图4的多个过电流保护芯片200_1及200_2进行校正时的流程图。在步骤S510中,通过每个过电流保护芯片的槽位比对单元220连接多个过电流保护芯片。在步骤S520中,校正工具110送出槽位比对命令SCOM至各过电流保护芯片的槽位比对单元220。在步骤S530中,各槽位比对单元220比对槽位比对命令SCOM与槽位位置S1及S2。在步骤S540中,各槽位比对单元220判断槽位比对命令SCOM与槽位位置S1或S2是否匹配。若匹配,则执行步骤S550,以进行如图5的校正程序。反之,若不匹配,则回到步骤S520。Please refer to FIG. 6 , which is a flow chart of calibrating the plurality of overcurrent protection chips 200_1 and 200_2 in FIG. 4 . In step S510 , multiple overcurrent protection chips are connected through the slot comparison unit 220 of each overcurrent protection chip. In step S520 , the calibration tool 110 sends a slot comparison command S COM to the slot comparison unit 220 of each overcurrent protection chip. In step S530 , each slot comparison unit 220 compares the slot comparison command S COM with the slot positions S1 and S2 . In step S540, each slot comparison unit 220 determines whether the slot comparison command S COM matches the slot position S1 or S2. If they match, step S550 is executed to perform the calibration procedure as shown in FIG. 5 . On the contrary, if they do not match, go back to step S520.

请参考图7,图7为对安装有图2的过电流保护芯片200的电源供应器由校正设定到出厂的流程图。在步骤S610中,藉由校正工具110进行校正规格的设定。在步骤S620中,藉由校正工具110及负载机120开始进行如图5的校正程序。在步骤S630中,将校正后所决定的校正数据130A及130B分别被存储在第一存储器模块224A及第二存储器模块224B的一个存储器单元中。在步骤S640中,藉由重工选择器230A及230B分别自第一存储器模块224A及第二存储器模块224B选出最新记录的校正数据。在步骤S650中,依据所选出的最新记录的校正数据,对电源供应器进行测试。在步骤S660中,判断测试结果是否符合规格。若符合规格,则进行步骤S670的出货程序。反之,若不符合规格,则回到步骤S610,以重新进行校正。Please refer to FIG. 7 . FIG. 7 is a flowchart of a power supply installed with the overcurrent protection chip 200 shown in FIG. 2 from calibration to delivery. In step S610 , the calibration specification is set by the calibration tool 110 . In step S620 , the calibration procedure as shown in FIG. 5 is started by the calibration tool 110 and the loading machine 120 . In step S630 , the corrected and determined corrected data 130A and 130B are respectively stored in a memory unit of the first memory module 224A and the second memory module 224B. In step S640, the newly recorded correction data is selected from the first memory module 224A and the second memory module 224B by the rework selectors 230A and 230B, respectively. In step S650, the power supply is tested according to the selected latest recorded calibration data. In step S660, it is determined whether the test result meets the specification. If the specification is met, then proceed to the shipping procedure of step S670. On the contrary, if the specification is not met, go back to step S610 to re-calibrate.

综上所述,通过本发明的过电流保护芯片及过电流保护电路,可很方便地对电源供应器进行多组的过电流保护设定。再者,每组可校正的电力输出可搭配一个包含多个存储器单元的存储器模块,以方便电源供应器制造厂于生产其电源供应器后如须变更其规格、设计时,可轻易地回收电源供应器且通过更新存储器模块所存储的校正数据,完成新规格的过电流校正的设定。此外,可通过槽位比对单元来串接多个槽位比对单元,而使电源供应器的可校正电力输出的组数得以轻易地扩增,而不须再另外设计新的过电流保护芯片,故使用上具有极高的弹性。To sum up, through the over-current protection chip and the over-current protection circuit of the present invention, multiple groups of over-current protection settings can be conveniently set for the power supply. Furthermore, each set of correctable power outputs can be matched with a memory module containing multiple memory units, so that power supply manufacturers can easily recover power when they need to change the specification and design of the power supply after production The supplier completes the setting of the overcurrent correction of the new specification by updating the correction data stored in the memory module. In addition, multiple slot comparison units can be connected in series through the slot comparison unit, so that the number of correctable power output groups of the power supply can be easily expanded without additionally designing a new overcurrent protection chip, so it has extremely high flexibility in use.

以上所述仅为本发明的优选实施例,凡依本发明权利要求书所做的均等变化与修饰,皆应属本发明的涵盖范围。The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the claims of the present invention shall fall within the scope of the present invention.

Claims (9)

1.一种电源供应器的过电流保护芯片,包含:1. An overcurrent protection chip for a power supply, comprising: 第一输入端,用以接收校正数据;the first input terminal is used to receive calibration data; 第二输入端,用以接收第一电流负载电位;the second input terminal is used to receive the first current load potential; 第三输入端,用以接收第二电流负载电位;the third input terminal is used for receiving the second current load potential; 第一存储器模块,包含至少一存储器单元,该第一存储器模块的每一存储器单元用以记录过电流保护值;The first memory module includes at least one memory unit, and each memory unit of the first memory module is used to record an overcurrent protection value; 第二存储器模块,包含至少一存储器单元,该第二存储器模块的每一存储器单元用以记录过电流保护值;以及The second memory module includes at least one memory unit, and each memory unit of the second memory module is used to record an overcurrent protection value; and 切换选择电路,耦接于该第一输入端、该第二输入端及该第三输入端,用以比较该校正数据及该第一电流负载电位,并比较该校正数据及该第二电流负载电位;A switching selection circuit, coupled to the first input terminal, the second input terminal and the third input terminal, for comparing the calibration data with the first current load potential, and comparing the calibration data with the second current load Potential; 其中当该校正数据与该第一电流负载电位相符时,该校正数据被存储到该第一存储器模块的一个存储器单元中;wherein when the correction data matches the first current load potential, the correction data is stored in a memory unit of the first memory module; 其中当该校正数据与该第二电流负载电位相符时,该校正数据被存储到该第二存储器模块的一个存储器单元中。Wherein when the correction data matches the second current load potential, the correction data is stored in a memory unit of the second memory module. 2.如权利要求1所述的过电流保护芯片,还包含:2. The overcurrent protection chip as claimed in claim 1, further comprising: 第四输入端,用以接收第三电流负载电位;以及a fourth input terminal for receiving a third current load potential; and 第三存储器模块,包含至少一存储器单元,该第三存储器模块的每一存储器单元用以记录一过电流保护值;The third memory module includes at least one memory unit, and each memory unit of the third memory module is used to record an overcurrent protection value; 其中该切换选择电路还耦接于该第四输入端,并另用以比较该校正数据及该第三电流负载电位,而当该校正数据与该第三电流负载电位相符时,该校正数据被存储到该第三存储器模块的一个存储器单元中。Wherein the switching selection circuit is also coupled to the fourth input terminal, and is used for comparing the correction data and the third current load potential, and when the correction data is consistent with the third current load potential, the correction data is stored in a memory unit of the third memory module. 3.如权利要求1所述的过电流保护芯片,其中该切换选择电路包含:3. The overcurrent protection chip as claimed in claim 1, wherein the switching selection circuit comprises: 第一负载比较单元,用以依据该校正数据调整该第一负载比较单元的第一校正电流感应电位;a first load comparison unit, configured to adjust a first correction current induction potential of the first load comparison unit according to the correction data; 第二负载比较单元,用以依据该校正数据调整该第二负载比较单元的第二校正电流感应电位;a second load comparison unit, configured to adjust a second correction current induction potential of the second load comparison unit according to the correction data; 校正组选择器,耦接于该第一负载比较单元的输出端及该第二负载比较单元的输出端;a correction group selector, coupled to the output end of the first load comparison unit and the output end of the second load comparison unit; 第一开关,耦接于该第一输入端、该校正组选择器及该第一存储器模块,用以控制该第一输入端与该第一存储器模块之间的电性连接;以及a first switch, coupled to the first input terminal, the correction group selector and the first memory module, for controlling the electrical connection between the first input terminal and the first memory module; and 第二开关,耦接于该第一输入端、该校正组选择器及该第二存储器模块,用以控制该第二输入端与该第二存储器模块之间的电性连接;a second switch, coupled to the first input terminal, the correction group selector and the second memory module, for controlling the electrical connection between the second input terminal and the second memory module; 其中当该第一校正电流感应电位等于该第一电流负载电位,该校正组选择器开启该第一开关,以使该校正数据被存储到该第一存储器模块的一个存储器单元中;Wherein when the first calibration current induction potential is equal to the first current load potential, the calibration group selector turns on the first switch, so that the calibration data is stored in a memory unit of the first memory module; 其中当该第二校正电流感应电位等于该第二电流负载电位,该校正组选择器开启该第二开关,以使该校正数据被存储到该第二存储器模块的一个存储器单元中。Wherein when the second calibration current sensing potential is equal to the second current load potential, the calibration group selector turns on the second switch, so that the calibration data is stored in a memory unit of the second memory module. 4.如权利要求1所述的过电流保护芯片,其中该第一存储器模块及该第二存储器模块各包含多个存储器单元,而该过电流保护芯片还包含:4. The overcurrent protection chip as claimed in claim 1, wherein each of the first memory module and the second memory module comprises a plurality of memory cells, and the overcurrent protection chip further comprises: 第一重工选择器,用以从该第一存储器模块的多个存储器单元中选出该第一存储器模块所存储的最近一笔校正数据;以及The first rework selector is used to select the latest correction data stored in the first memory module from the plurality of memory units of the first memory module; and 第二重工选择器,用以从该第二存储器模块的多个存储器单元中选出该第二存储器模块所存储的最近一笔校正数据。The second rework selector is used for selecting the latest correction data stored in the second memory module from the plurality of memory units of the second memory module. 5.如权利要求1所述的过电流保护芯片,还包含:5. The overcurrent protection chip as claimed in claim 1, further comprising: 槽位比对单元,用以比对一槽位比对命令及一槽位位置,以输出一致能信号;The slot comparison unit is used to compare a slot comparison command and a slot position to output a enable signal; 第一选择开关,用以依据该致能信号控制该第一输入端至该切换选择电路及该第一存储器模块之间的电性连接;以及a first selection switch, used for controlling the electrical connection between the first input end, the switching selection circuit and the first memory module according to the enabling signal; and 第二选择开关,用以依据该致能信号控制该第一输入端至该切换选择电路及该第二存储器模块之间的电性连接。The second selection switch is used for controlling the electrical connection between the first input end, the switching selection circuit and the second memory module according to the enabling signal. 6.一种电源供应器的过电流保护电路,包含多个过电流保护芯片,其中每一个过电流保护芯片包含:6. An overcurrent protection circuit of a power supply, comprising a plurality of overcurrent protection chips, wherein each overcurrent protection chip comprises: 第一输入端,用以接收一校正数据;the first input terminal is used for receiving a correction data; 第二输入端,用以接收第一电流负载电位;the second input terminal is used to receive the first current load potential; 第三输入端,用以接收一第二电流负载电位;The third input end is used for receiving a second current load potential; 第一存储器模块,包含至少一存储器单元,该第一存储器模块的每一存储器单元用以记录一过电流保护值;The first memory module includes at least one memory unit, and each memory unit of the first memory module is used to record an overcurrent protection value; 第二存储器模块,包含至少一存储器单元,该第二存储器模块的每一存储器单元用以记录过电流保护值;The second memory module includes at least one memory unit, and each memory unit of the second memory module is used to record an overcurrent protection value; 切换选择电路,耦接于该第一输入端、该第二输入端及该第三输入端,用以比较该校正数据及该第一电流负载电位,并比较该校正数据及该第二电流负载电位,其中当该校正数据与该第一电流负载电位相符时,该校正数据被存储到该第一存储器模块的一个存储器单元中,且当该校正数据与该第二电流负载电位相符时,该校正数据被存储到该第二存储器模块的一个存储器单元中;A switching selection circuit, coupled to the first input terminal, the second input terminal and the third input terminal, for comparing the calibration data with the first current load potential, and comparing the calibration data with the second current load potential, wherein when the corrected data coincides with the first current load potential, the corrected data is stored in a memory cell of the first memory module, and when the corrected data coincides with the second current load potential, the correction data is stored into a memory unit of the second memory module; 槽位比对单元,用以比对槽位比对命令及槽位位置,以输出致能信号并决定该致能信号的电位;The slot comparing unit is used for comparing the slot comparing command and the slot position, so as to output the enable signal and determine the potential of the enable signal; 第一选择开关,用以依据该致能信号控制该第一输入端至该切换选择电路及该第一存储器模块之间的电性连接;以及a first selection switch, used for controlling the electrical connection between the first input end, the switching selection circuit and the first memory module according to the enabling signal; and 第二选择开关,用以依据该致能信号控制该第一输入端至该切换选择电路及该第二存储器模块之间的电性连接;a second selection switch, used for controlling the electrical connection between the first input end, the switching selection circuit and the second memory module according to the enabling signal; 其中这些过电流保护芯片的该槽位比对单元彼此耦接,而各自地接收该槽位比对命令及该槽位位置。The slot comparison units of the overcurrent protection chips are coupled to each other, and receive the slot comparison command and the slot position respectively. 7.如权利要求6所述的过电流保护电路,其中每一个过电流保护芯片还包含:7. The overcurrent protection circuit as claimed in claim 6, wherein each overcurrent protection chip further comprises: 第四输入端,用以接收第三电流负载电位;以及a fourth input terminal for receiving a third current load potential; and 第三存储器模块,包含至少一存储器单元,该第三存储器模块的每一存储器单元用以记录过电流保护值;The third memory module includes at least one memory unit, and each memory unit of the third memory module is used to record an overcurrent protection value; 其中该切换选择电路还耦接于该第四输入端,并另用以比较该校正数据及该第三电流负载电位,而当该校正数据与该第三电流负载电位相符时,该校正数据被存储到该第三存储器模块的一个存储器单元中。Wherein the switching selection circuit is also coupled to the fourth input terminal, and is used for comparing the correction data and the third current load potential, and when the correction data is consistent with the third current load potential, the correction data is stored in a memory unit of the third memory module. 8.如权利要求6所述的过电流保护电路,其中每一个过电流保护芯片的该切换选择电路包含:8. The overcurrent protection circuit as claimed in claim 6, wherein the switching selection circuit of each overcurrent protection chip comprises: 第一负载比较单元,用以依据该校正数据调整该第一负载比较单元的第一校正电流感应电位;a first load comparison unit, configured to adjust a first correction current induction potential of the first load comparison unit according to the correction data; 第二负载比较单元,用以依据该校正数据调整该第二负载比较单元的第二校正电流感应电位;a second load comparison unit, configured to adjust a second correction current induction potential of the second load comparison unit according to the correction data; 校正组选择器,耦接于该第一负载比较单元的输出端及该第二负载比较单元的输出端;a correction group selector, coupled to the output end of the first load comparison unit and the output end of the second load comparison unit; 第一开关,耦接于该第一输入端、该校正组选择器及该第一存储器模块,用以控制该第一输入端与该第一存储器模块之间的电性连接;以及a first switch, coupled to the first input terminal, the correction group selector and the first memory module, for controlling the electrical connection between the first input terminal and the first memory module; and 第二开关,耦接于该第一输入端、该校正组选择器及该第二存储器模块,用以控制该第二输入端与该第二存储器模块之间的电性连接;a second switch, coupled to the first input terminal, the correction group selector and the second memory module, for controlling the electrical connection between the second input terminal and the second memory module; 其中当该第一校正电流感应电位等于该第一电流负载电位,该校正组选择器开启该第一开关,以使该校正数据被存储到该第一存储器模块的一个存储器单元中;Wherein when the first calibration current induction potential is equal to the first current load potential, the calibration group selector turns on the first switch, so that the calibration data is stored in a memory unit of the first memory module; 其中当该第二校正电流感应电位等于该第二电流负载电位,该校正组选择器开启该第二开关,以使该校正数据被存储到该第二存储器模块的一个存储器单元中。Wherein when the second calibration current sensing potential is equal to the second current load potential, the calibration group selector turns on the second switch, so that the calibration data is stored in a memory unit of the second memory module. 9.如权利要求6所述的过电流保护电路,其中每一个过电流保护芯片的该第一存储器模块及该第二存储器模块各包含多个存储器单元,而每一个过电流保护芯片还包含:9. The overcurrent protection circuit as claimed in claim 6, wherein the first memory module and the second memory module of each overcurrent protection chip each comprise a plurality of memory cells, and each overcurrent protection chip further comprises: 第一重工选择器,用以从该第一存储器模块的多个存储器单元中选出该第一存储器模块所存储的最近一笔校正数据;以及The first rework selector is used to select the latest correction data stored in the first memory module from the plurality of memory units of the first memory module; and 第二重工选择器,用以从该第二存储器模块的多个存储器单元中选出该第二存储器模块所存储的最近一笔校正数据。The second rework selector is used for selecting the latest correction data stored in the second memory module from the plurality of memory units of the second memory module.
CN201510220733.0A 2015-04-07 2015-05-04 Overcurrent protection chip and overcurrent protection circuit of power supply Active CN106207976B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW104111143 2015-04-07
TW104111143A TWI548981B (en) 2015-04-07 2015-04-07 Over current protection (ocp) chip and ocp circuit of power supply

Publications (2)

Publication Number Publication Date
CN106207976A true CN106207976A (en) 2016-12-07
CN106207976B CN106207976B (en) 2018-09-04

Family

ID=57445019

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510220733.0A Active CN106207976B (en) 2015-04-07 2015-05-04 Overcurrent protection chip and overcurrent protection circuit of power supply

Country Status (2)

Country Link
CN (1) CN106207976B (en)
TW (1) TWI548981B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111856310A (en) * 2019-04-03 2020-10-30 深圳富桂精密工业有限公司 Power distribution unit monitoring system

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11170675B2 (en) * 2020-03-19 2021-11-09 Himax Technologies Limited Method for performing hybrid over-current protection detection in a display module, and associated timing controller
TWI801220B (en) * 2022-04-26 2023-05-01 宏碁股份有限公司 Power supply device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006178539A (en) * 2004-12-20 2006-07-06 Freescale Semiconductor Inc Overcurrent protection circuit and dc power supply device
WO2010126491A1 (en) * 2009-04-28 2010-11-04 Semiconductor Components Industries, Llc Method for providing over current protection and circuit
TW201239600A (en) * 2011-03-25 2012-10-01 Delta Electronics Inc Power supply
TWI455469B (en) * 2011-08-04 2014-10-01 Richtek Technology Corp Power supply with over current protection and control circuit thereof and method of over current protection
TWI566492B (en) * 2012-10-26 2017-01-11 偉詮電子股份有限公司 Over current protection chip of power supply and configuration method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111856310A (en) * 2019-04-03 2020-10-30 深圳富桂精密工业有限公司 Power distribution unit monitoring system
CN111856310B (en) * 2019-04-03 2023-08-29 深圳富联富桂精密工业有限公司 Power Distribution Unit Monitoring System

Also Published As

Publication number Publication date
TWI548981B (en) 2016-09-11
CN106207976B (en) 2018-09-04
TW201636767A (en) 2016-10-16

Similar Documents

Publication Publication Date Title
US8050129B2 (en) E-fuse apparatus for controlling reference voltage required for programming/reading e-fuse macro in an integrated circuit via switch device in the same integrated circuit
EP3149601B1 (en) Systems for setting the address of a module
US8519738B2 (en) Impedance calibration circuit and semiconductor apparatus using the same
US8183849B2 (en) Calibration apparatus and calibration method thereof
CN111863048B (en) Circuit, method, memory and electronic device for determining memory reference voltage
CN106207976B (en) Overcurrent protection chip and overcurrent protection circuit of power supply
US9304524B2 (en) Voltage regulation system for integrated circuit
TW201531030A (en) System and method for using an integrated circuit pin as both a current limiting input and an open-drain output
CN108075655B (en) Power supply conversion device
US8330505B2 (en) Protection circuit for driving capacitive loads
CN106610686A (en) Voltage correction circuit and voltage correction system
US9651600B2 (en) Power up detecting system
US20130170286A1 (en) Decoupling capacitance calibration devices and methods for dram
US20070268062A1 (en) Fuse circuit for repair and detection
US20070285293A1 (en) On-die termination apparatus for semiconductor memory having exact comparison voltage characteristic and method of controlling the same
TWI566492B (en) Over current protection chip of power supply and configuration method thereof
CN114373497A (en) Fuse burning circuit
CN116482564A (en) Power supply detection device and power supply detection method
US9964979B2 (en) Method with function parameter setting and integrated circuit using the same
US9824728B2 (en) Method for performing memory interface calibration in an electronic device, and associated apparatus and associated memory controller
CN102255480A (en) Power conversion device and pulse width modulation signal control device thereof
KR100856126B1 (en) Offset compensation method of op amp using fuse metal and its device
US20080218247A1 (en) Method for automatically adjusting electrical fuse programming voltage
KR100675886B1 (en) Voltage level detection circuit
US7932740B1 (en) Driving circuit with load calibration and the method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant