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CN106207323A - Micro-strip and the duplexer of substrate integration wave-guide mixed structure - Google Patents

Micro-strip and the duplexer of substrate integration wave-guide mixed structure Download PDF

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Publication number
CN106207323A
CN106207323A CN201610726228.8A CN201610726228A CN106207323A CN 106207323 A CN106207323 A CN 106207323A CN 201610726228 A CN201610726228 A CN 201610726228A CN 106207323 A CN106207323 A CN 106207323A
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CN
China
Prior art keywords
micro
integration wave
pass network
substrate integration
duplexer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610726228.8A
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Chinese (zh)
Inventor
程飞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dfine Technology Co Ltd
Original Assignee
Dfine Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dfine Technology Co Ltd filed Critical Dfine Technology Co Ltd
Priority to CN201610726228.8A priority Critical patent/CN106207323A/en
Publication of CN106207323A publication Critical patent/CN106207323A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters

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  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

The present invention is the duplexer of micro-strip and substrate integration wave-guide mixed structure, solves the shortcoming that existing diplexer structure is complicated.This duplexer includes input matching network (11), micro-strip low-pass network (12), substrate integration wave-guide high pass network (13).Input matching network is that T-shaped, T-shaped the right and left minor matters are connected with substrate integration wave-guide high pass network (13), micro-strip low-pass network (12) respectively, and lower end is the input port of duplexer.Micro-strip low-pass network (12) is sequentially connected with longitudinal open circuit minor matters (122) by horizontal high resistant line (121), is eventually connected to the first output port (123) and constitutes.The rectangular waveguide coating metal (131) that substrate integration wave-guide high pass network (13) is upper and lower by being positioned at substrate, two rows' plated-through hole array (132), trapezoidal transition line (133), the second output port (134), and dielectric layer (2) collectively form.

Description

Micro-strip and the duplexer of substrate integration wave-guide mixed structure
Technical field:
The invention belongs to microwave and millimeter wave device arts, particularly relate to the duplexer in microwave and millimeter wave device.
Background technology:
Duplexer achieves wide development in mobile communication, the field such as radar.Duplexer often supports the use with antenna, and it is made With being that signals different for two-way frequency is separated to two ports from a port, or this two paths of signals is closed from two ports Become to a public port.Existing diplexer structure is complicated, and price is high.
Summary of the invention
The purpose of the present invention is to propose to a kind of simple in construction, the low micro-strip of price is double with substrate integration wave-guide mixed structure Multiplexer.
The technical scheme is that
Including input matching network 11, micro-strip low-pass network 12, substrate integration wave-guide high pass network 13, input matching network 11 is T-shaped, T-shaped the right and left minor matters are connected with substrate integration wave-guide high pass network 13, micro-strip low-pass network 12 respectively, T word The lower end of shape is the input port of duplexer, and micro-strip low-pass network 12 is by the 1-n high resistant line 121 laterally connected, at high resistant line 1-(n-1) the open circuit minor matters 122 that junction point is the most in parallel, the first output port 123 being connected with the n-th high resistant line 121 Constituting, wherein n is more than or equal to 2, and the quantity of open circuit minor matters 122 is less than the quantity of high resistant line 121 by 1, substrate integration wave-guide high pass Network 13 is by the rectangular waveguide coating metal 131 being positioned at substrate upper and lower surface) two row's plated-through hole arrays 132, left and right Trapezoidal transition line 133, the second output port 134 being connected with left trapezoidal transition line, and Jie between two waveguide coating metal 131 Matter layer 2 collectively forms, and two row's plated-through hole arrays 132 run through dielectric layer 2 and are positioned at the long limit of waveguide coating metal about 131 two Inner side, right trapezoidal transition line is connected with the left side minor matters of input matching network 11.
The kind of duplexer can be divided into cavity duplexer, dielectric duplexer and micro-strip duplexer etc..Micro-strip duplexer system Making on circuit boards, technique is simple, and cheap, size is also much smaller than cavity duplexer.Substrate integrated waveguide technology is simultaneously The advantage with the high-power high quality factor of metal waveguide, and the advantage that the size of microstrip line is little, more and more by people Concern, be the most widely used in the making of the passive device such as antenna, wave filter.Simple substrate integration wave-guide leads to metal Waveguide is the same, has the characteristic of high pass, therefore can be used to make the high pass network of duplexer, do so, can make duplexer Simple in construction, it is simple to design.
The principle of technical solution of the present invention is:
Signal is entered by T-shaped input matching network 11, T-shaped both sides respectively with micro-strip low-pass network 12, substrate is integrated Two networks can be mated by waveguide high pass network 13 by the length and width changing these two limits.Micro-strip low pass net The high resistant line 121 of network can be equivalent to inductance, has the characteristic of low pass, and minor matters 122 of opening a way can produce zero point at stopband, increases low The Out-of-band rejection level of bandpass filter, by reasonably design, can make this low-pass network produce generalized chebyshev low pass and ring Should.Trapezoidal transition line 133 in substrate integration wave-guide high pass network 13 is for the transition of micro-strip to substrate integration wave-guide.Substrate collection Becoming waveguide itself to have the width of the characteristic of high pass, its cut-off frequency and substrate integration wave-guide, the relative dielectric constant of substrate has Close, and its Out-of-band rejection, being controlled by substrate integration wave-guide length, length is the longest, and Out-of-band rejection is the best.
Advantages of the present invention and beneficial effect:
(1) present invention process-cycle is short, and production cost is low, electric performance stablity, is suitable for batch production;
(2) high pass network of the present invention is directly constituted by substrate integration wave-guide, simple in construction, and design is convenient.
Accompanying drawing illustrates:
Fig. 1 is the structure chart of the present invention.
Fig. 2 is the frequency response curve that the present invention emulates.
Detailed description of the invention:
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings: as it is shown in figure 1, micro-strip and substrate integration wave-guide The duplexer of mixed structure, including input matching network 11, micro-strip low-pass network 12, substrate integration wave-guide high pass network 13, defeated Enter matching network be T-shaped, T-shaped the right and left minor matters respectively with substrate integration wave-guide high pass network 13, micro-strip low pass net Network 12 is connected, and lower end is the input port of duplexer, and micro-strip low-pass network 12 is by horizontal high resistant line 121 and longitudinal open circuit branch Joint 122 is sequentially connected, and is eventually connected to the first output port 123 and constitutes, and wherein the quantity of high resistant line 121 is 4, minor matters of opening a way The quantity of 122 is 3, the rectangular waveguide coating metal 131 that substrate integration wave-guide high pass network 13 is upper and lower by being positioned at substrate, two Row's plated-through hole array 132, trapezoidal transition line 133, the second output port 134, and dielectric layer 2 collectively form, two row's metals Change via-hole array 132 and run through dielectric layer 2, be positioned at the both sides on the long limit of waveguide coating metal 131.Fig. 2 is that the frequency of this duplexer is rung Answering curve, the operating frequency of two passages of duplexer is respectively 4-6GHz, 8-10GHz, and insertion loss is less than 1.5dB, passband Interior return loss is more than 35dB more than 10dB, the isolation between two passages.

Claims (1)

1. micro-strip and the duplexer of substrate integration wave-guide mixed structure, it is characterised in that include input matching network (11), micro-strip Low-pass network (12), substrate integration wave-guide high pass network (13), input matching network (11) is T-shaped, T-shaped the right and left Minor matters are connected with substrate integration wave-guide high pass network (13), micro-strip low-pass network (12) respectively, and T-shaped lower end is duplexer Input port, micro-strip low-pass network (12) by 1-n high resistant line (121) laterally connected, at high resistant line junction point longitudinally the most successively 1-(n-1) open circuit minor matters (122) in parallel, the first output port (123) being connected with the n-th high resistant line (121) is constituted, wherein N is more than or equal to 2, and the quantity of open circuit minor matters (122) is less by 1 than the quantity of high resistant line (121), substrate integration wave-guide high pass network (13) by being positioned at the rectangular waveguide coating metal (131) of substrate upper and lower surface, two rows' plated-through hole array (132), left Right trapezoidal transition line (133), the second output port (134) being connected with left trapezoidal transition line, and two waveguide coating metal (131) Between dielectric layer (2) collectively form, two rows' plated-through hole array (132) are run through dielectric layer (2) and are positioned at waveguide coating metal The inner side on (131) two long limits, right trapezoidal transition line is connected with the left side minor matters of input matching network (11).
CN201610726228.8A 2016-08-26 2016-08-26 Micro-strip and the duplexer of substrate integration wave-guide mixed structure Pending CN106207323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610726228.8A CN106207323A (en) 2016-08-26 2016-08-26 Micro-strip and the duplexer of substrate integration wave-guide mixed structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610726228.8A CN106207323A (en) 2016-08-26 2016-08-26 Micro-strip and the duplexer of substrate integration wave-guide mixed structure

Publications (1)

Publication Number Publication Date
CN106207323A true CN106207323A (en) 2016-12-07

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110574224A (en) * 2017-04-28 2019-12-13 株式会社藤仓 Duplexer and multiplexer
CN112910435A (en) * 2021-01-25 2021-06-04 武汉光谷航天三江激光产业技术研究院有限公司 Duplexer device and network implementation method thereof
US11189897B2 (en) 2017-04-28 2021-11-30 Fujikura Ltd. Filter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103682534A (en) * 2013-12-26 2014-03-26 航天恒星科技有限公司 Dielectric waveguide filter with defected ground loaded on magnetic coupling structure
CN104733812A (en) * 2013-12-24 2015-06-24 南京理工大学 Substrate integrated waveguide high-pass filter
WO2016086852A1 (en) * 2014-12-01 2016-06-09 Huawei Technologies Co., Ltd. Millimeter wave dual-mode diplexer and method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104733812A (en) * 2013-12-24 2015-06-24 南京理工大学 Substrate integrated waveguide high-pass filter
CN103682534A (en) * 2013-12-26 2014-03-26 航天恒星科技有限公司 Dielectric waveguide filter with defected ground loaded on magnetic coupling structure
WO2016086852A1 (en) * 2014-12-01 2016-06-09 Huawei Technologies Co., Ltd. Millimeter wave dual-mode diplexer and method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
郝张成: "基片集成波导技术的研究", 《中国博士学位论文全文数据库(电子期刊)》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110574224A (en) * 2017-04-28 2019-12-13 株式会社藤仓 Duplexer and multiplexer
US11121695B2 (en) 2017-04-28 2021-09-14 Fujikura Ltd. Diplexer and multiplexer
US11189897B2 (en) 2017-04-28 2021-11-30 Fujikura Ltd. Filter
CN112910435A (en) * 2021-01-25 2021-06-04 武汉光谷航天三江激光产业技术研究院有限公司 Duplexer device and network implementation method thereof

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Application publication date: 20161207