CN106207323A - Micro-strip and the duplexer of substrate integration wave-guide mixed structure - Google Patents
Micro-strip and the duplexer of substrate integration wave-guide mixed structure Download PDFInfo
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- CN106207323A CN106207323A CN201610726228.8A CN201610726228A CN106207323A CN 106207323 A CN106207323 A CN 106207323A CN 201610726228 A CN201610726228 A CN 201610726228A CN 106207323 A CN106207323 A CN 106207323A
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- micro
- integration wave
- pass network
- substrate integration
- duplexer
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- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 230000010354 integration Effects 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 230000007704 transition Effects 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000010276 construction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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Abstract
The present invention is the duplexer of micro-strip and substrate integration wave-guide mixed structure, solves the shortcoming that existing diplexer structure is complicated.This duplexer includes input matching network (11), micro-strip low-pass network (12), substrate integration wave-guide high pass network (13).Input matching network is that T-shaped, T-shaped the right and left minor matters are connected with substrate integration wave-guide high pass network (13), micro-strip low-pass network (12) respectively, and lower end is the input port of duplexer.Micro-strip low-pass network (12) is sequentially connected with longitudinal open circuit minor matters (122) by horizontal high resistant line (121), is eventually connected to the first output port (123) and constitutes.The rectangular waveguide coating metal (131) that substrate integration wave-guide high pass network (13) is upper and lower by being positioned at substrate, two rows' plated-through hole array (132), trapezoidal transition line (133), the second output port (134), and dielectric layer (2) collectively form.
Description
Technical field:
The invention belongs to microwave and millimeter wave device arts, particularly relate to the duplexer in microwave and millimeter wave device.
Background technology:
Duplexer achieves wide development in mobile communication, the field such as radar.Duplexer often supports the use with antenna, and it is made
With being that signals different for two-way frequency is separated to two ports from a port, or this two paths of signals is closed from two ports
Become to a public port.Existing diplexer structure is complicated, and price is high.
Summary of the invention
The purpose of the present invention is to propose to a kind of simple in construction, the low micro-strip of price is double with substrate integration wave-guide mixed structure
Multiplexer.
The technical scheme is that
Including input matching network 11, micro-strip low-pass network 12, substrate integration wave-guide high pass network 13, input matching network 11 is
T-shaped, T-shaped the right and left minor matters are connected with substrate integration wave-guide high pass network 13, micro-strip low-pass network 12 respectively, T word
The lower end of shape is the input port of duplexer, and micro-strip low-pass network 12 is by the 1-n high resistant line 121 laterally connected, at high resistant line
1-(n-1) the open circuit minor matters 122 that junction point is the most in parallel, the first output port 123 being connected with the n-th high resistant line 121
Constituting, wherein n is more than or equal to 2, and the quantity of open circuit minor matters 122 is less than the quantity of high resistant line 121 by 1, substrate integration wave-guide high pass
Network 13 is by the rectangular waveguide coating metal 131 being positioned at substrate upper and lower surface) two row's plated-through hole arrays 132, left and right
Trapezoidal transition line 133, the second output port 134 being connected with left trapezoidal transition line, and Jie between two waveguide coating metal 131
Matter layer 2 collectively forms, and two row's plated-through hole arrays 132 run through dielectric layer 2 and are positioned at the long limit of waveguide coating metal about 131 two
Inner side, right trapezoidal transition line is connected with the left side minor matters of input matching network 11.
The kind of duplexer can be divided into cavity duplexer, dielectric duplexer and micro-strip duplexer etc..Micro-strip duplexer system
Making on circuit boards, technique is simple, and cheap, size is also much smaller than cavity duplexer.Substrate integrated waveguide technology is simultaneously
The advantage with the high-power high quality factor of metal waveguide, and the advantage that the size of microstrip line is little, more and more by people
Concern, be the most widely used in the making of the passive device such as antenna, wave filter.Simple substrate integration wave-guide leads to metal
Waveguide is the same, has the characteristic of high pass, therefore can be used to make the high pass network of duplexer, do so, can make duplexer
Simple in construction, it is simple to design.
The principle of technical solution of the present invention is:
Signal is entered by T-shaped input matching network 11, T-shaped both sides respectively with micro-strip low-pass network 12, substrate is integrated
Two networks can be mated by waveguide high pass network 13 by the length and width changing these two limits.Micro-strip low pass net
The high resistant line 121 of network can be equivalent to inductance, has the characteristic of low pass, and minor matters 122 of opening a way can produce zero point at stopband, increases low
The Out-of-band rejection level of bandpass filter, by reasonably design, can make this low-pass network produce generalized chebyshev low pass and ring
Should.Trapezoidal transition line 133 in substrate integration wave-guide high pass network 13 is for the transition of micro-strip to substrate integration wave-guide.Substrate collection
Becoming waveguide itself to have the width of the characteristic of high pass, its cut-off frequency and substrate integration wave-guide, the relative dielectric constant of substrate has
Close, and its Out-of-band rejection, being controlled by substrate integration wave-guide length, length is the longest, and Out-of-band rejection is the best.
Advantages of the present invention and beneficial effect:
(1) present invention process-cycle is short, and production cost is low, electric performance stablity, is suitable for batch production;
(2) high pass network of the present invention is directly constituted by substrate integration wave-guide, simple in construction, and design is convenient.
Accompanying drawing illustrates:
Fig. 1 is the structure chart of the present invention.
Fig. 2 is the frequency response curve that the present invention emulates.
Detailed description of the invention:
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings: as it is shown in figure 1, micro-strip and substrate integration wave-guide
The duplexer of mixed structure, including input matching network 11, micro-strip low-pass network 12, substrate integration wave-guide high pass network 13, defeated
Enter matching network be T-shaped, T-shaped the right and left minor matters respectively with substrate integration wave-guide high pass network 13, micro-strip low pass net
Network 12 is connected, and lower end is the input port of duplexer, and micro-strip low-pass network 12 is by horizontal high resistant line 121 and longitudinal open circuit branch
Joint 122 is sequentially connected, and is eventually connected to the first output port 123 and constitutes, and wherein the quantity of high resistant line 121 is 4, minor matters of opening a way
The quantity of 122 is 3, the rectangular waveguide coating metal 131 that substrate integration wave-guide high pass network 13 is upper and lower by being positioned at substrate, two
Row's plated-through hole array 132, trapezoidal transition line 133, the second output port 134, and dielectric layer 2 collectively form, two row's metals
Change via-hole array 132 and run through dielectric layer 2, be positioned at the both sides on the long limit of waveguide coating metal 131.Fig. 2 is that the frequency of this duplexer is rung
Answering curve, the operating frequency of two passages of duplexer is respectively 4-6GHz, 8-10GHz, and insertion loss is less than 1.5dB, passband
Interior return loss is more than 35dB more than 10dB, the isolation between two passages.
Claims (1)
1. micro-strip and the duplexer of substrate integration wave-guide mixed structure, it is characterised in that include input matching network (11), micro-strip
Low-pass network (12), substrate integration wave-guide high pass network (13), input matching network (11) is T-shaped, T-shaped the right and left
Minor matters are connected with substrate integration wave-guide high pass network (13), micro-strip low-pass network (12) respectively, and T-shaped lower end is duplexer
Input port, micro-strip low-pass network (12) by 1-n high resistant line (121) laterally connected, at high resistant line junction point longitudinally the most successively
1-(n-1) open circuit minor matters (122) in parallel, the first output port (123) being connected with the n-th high resistant line (121) is constituted, wherein
N is more than or equal to 2, and the quantity of open circuit minor matters (122) is less by 1 than the quantity of high resistant line (121), substrate integration wave-guide high pass network
(13) by being positioned at the rectangular waveguide coating metal (131) of substrate upper and lower surface, two rows' plated-through hole array (132), left
Right trapezoidal transition line (133), the second output port (134) being connected with left trapezoidal transition line, and two waveguide coating metal (131)
Between dielectric layer (2) collectively form, two rows' plated-through hole array (132) are run through dielectric layer (2) and are positioned at waveguide coating metal
The inner side on (131) two long limits, right trapezoidal transition line is connected with the left side minor matters of input matching network (11).
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CN201610726228.8A CN106207323A (en) | 2016-08-26 | 2016-08-26 | Micro-strip and the duplexer of substrate integration wave-guide mixed structure |
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CN201610726228.8A CN106207323A (en) | 2016-08-26 | 2016-08-26 | Micro-strip and the duplexer of substrate integration wave-guide mixed structure |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110574224A (en) * | 2017-04-28 | 2019-12-13 | 株式会社藤仓 | Duplexer and multiplexer |
CN112910435A (en) * | 2021-01-25 | 2021-06-04 | 武汉光谷航天三江激光产业技术研究院有限公司 | Duplexer device and network implementation method thereof |
US11189897B2 (en) | 2017-04-28 | 2021-11-30 | Fujikura Ltd. | Filter |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103682534A (en) * | 2013-12-26 | 2014-03-26 | 航天恒星科技有限公司 | Dielectric waveguide filter with defected ground loaded on magnetic coupling structure |
CN104733812A (en) * | 2013-12-24 | 2015-06-24 | 南京理工大学 | Substrate integrated waveguide high-pass filter |
WO2016086852A1 (en) * | 2014-12-01 | 2016-06-09 | Huawei Technologies Co., Ltd. | Millimeter wave dual-mode diplexer and method |
-
2016
- 2016-08-26 CN CN201610726228.8A patent/CN106207323A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104733812A (en) * | 2013-12-24 | 2015-06-24 | 南京理工大学 | Substrate integrated waveguide high-pass filter |
CN103682534A (en) * | 2013-12-26 | 2014-03-26 | 航天恒星科技有限公司 | Dielectric waveguide filter with defected ground loaded on magnetic coupling structure |
WO2016086852A1 (en) * | 2014-12-01 | 2016-06-09 | Huawei Technologies Co., Ltd. | Millimeter wave dual-mode diplexer and method |
Non-Patent Citations (1)
Title |
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郝张成: "基片集成波导技术的研究", 《中国博士学位论文全文数据库(电子期刊)》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110574224A (en) * | 2017-04-28 | 2019-12-13 | 株式会社藤仓 | Duplexer and multiplexer |
US11121695B2 (en) | 2017-04-28 | 2021-09-14 | Fujikura Ltd. | Diplexer and multiplexer |
US11189897B2 (en) | 2017-04-28 | 2021-11-30 | Fujikura Ltd. | Filter |
CN112910435A (en) * | 2021-01-25 | 2021-06-04 | 武汉光谷航天三江激光产业技术研究院有限公司 | Duplexer device and network implementation method thereof |
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Application publication date: 20161207 |