CN106185792A - A kind of population parameter controllable method for preparing of super-hydrophobic micro-nano compound structure - Google Patents
A kind of population parameter controllable method for preparing of super-hydrophobic micro-nano compound structure Download PDFInfo
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Abstract
本发明公开了一种超疏水微纳复合结构的全参数可控制备方法,属于微纳结构制备技术领域。该方法是将微米结构和纳米结构制备结合起来,通过分层制备,即通过光刻实现微米结构制备,通过胶体软刻蚀和体硅刻蚀实现纳米结构制备,微米和纳米结构的复合是通过纳米微球掩膜与微米结构阵列复合来实现的。该方法为微纳结构超疏水表面的科学研究和工程实践提供了研究基础,有效的将材料表面的宏观现象与微观结构联系起来,为定量、定性的探索超疏水表面的物理化学性质提供了基础。该方法是将胶体软刻蚀与体硅刻蚀结合起来,工艺可控性强,操作简单,成本低廉,加工精度高。
The invention discloses a full-parameter controllable preparation method of a superhydrophobic micro-nano composite structure, which belongs to the technical field of micro-nano structure preparation. The method is to combine the preparation of microstructure and nanostructure, through layered preparation, that is, to realize the preparation of microstructure by photolithography, and to realize the preparation of nanostructure by colloidal soft etching and bulk silicon etching. The composite of micron and nanostructure is achieved by It is realized by compounding the nano-microsphere mask and the microstructure array. This method provides a research basis for the scientific research and engineering practice of micro-nano-structured superhydrophobic surfaces, effectively links the macroscopic phenomena and microstructures of material surfaces, and provides a basis for quantitative and qualitative exploration of the physical and chemical properties of superhydrophobic surfaces. . The method combines colloidal soft etching and bulk silicon etching, has strong process controllability, simple operation, low cost and high processing precision.
Description
技术领域technical field
本发明属于微纳结构制备技术领域,具体涉及了一种超疏水微纳复合结构的全参数可控制备方法。The invention belongs to the technical field of micro-nano structure preparation, and in particular relates to a full-parameter controllable preparation method of a super-hydrophobic micro-nano composite structure.
背景技术Background technique
超疏水是材料表面的一种特殊润湿状态,它在科学研究及工业生产中有非常广泛的应用。超疏水表面是指水滴的静态接触角θ≥150°的表面,这种水滴与表面互相排斥的物理性质,导致了水滴与表面的接触面积减少,水滴在表面处于一种悬浮状态。由于超疏水表面的这种优越特性,因此在防雾、防冰、防雪、自清洁、减阻、脱附、耐腐蚀和抗氧化等方面都有重要作用,潜在应用价值很高。Superhydrophobic is a special wetting state on the surface of materials, which is widely used in scientific research and industrial production. A superhydrophobic surface refers to a surface with a static contact angle of water droplets θ ≥ 150°. This physical property of water droplets and the surface repelling each other leads to a reduction in the contact area between the water droplet and the surface, and the water droplet is in a suspended state on the surface. Due to the superior characteristics of the superhydrophobic surface, it plays an important role in anti-fog, anti-icing, anti-snow, self-cleaning, drag reduction, desorption, corrosion resistance and oxidation resistance, etc., and has high potential application value.
表面润湿特性主要由表面自由能和表面微观形貌决定。Y T Cheng(Nanotechnology,17(5),1359-1362)在研究荷叶表面超疏水性时发现荷叶表面是一种双阶层的微纳复合结构,其表面分布着许多直径在5~9μm,高度1~20μm的微米突起和平均直径在200nm的纳米突起结构,并且表面由一层底表面能的蜡质组成[Chem.Soc.Rev.2010.39,3240],且研究证明微纳复合结构的二元协同效应是具有超疏水性能的关键因数。因此通过构造微纳结构和表面处理成为制备超疏水表面的一种途径。Surface wetting properties are mainly determined by surface free energy and surface microscopic topography. Y T Cheng (Nanotechnology, 17(5), 1359-1362) found that the surface of the lotus leaf is a double-layer micro-nano composite structure when studying the superhydrophobicity of the lotus leaf surface. Micro-protrusions of 1-20 μm and nano-protrusion structures with an average diameter of 200 nm, and the surface is composed of a layer of wax with a bottom surface energy [Chem. The synergistic effect is the key factor for superhydrophobic properties. Therefore, constructing micro-nano structures and surface treatment has become a way to prepare super-hydrophobic surfaces.
目前,超疏水表面的制备方法有化学气相沉积、电化学、模板法、溶胶凝胶法、水热法、光刻蚀、飞秒激光等,这些方法是在不同基底构筑微纳结构,并在表面修饰低表面能物质,实现超疏水性。但是电化学、溶胶凝胶、水热法都是利用化学反应在基底上形成杂乱的微纳复合结构,无法实现微纳结构的全参数可控制备;化学气相沉积是通过在基底上制备具有低能表面的氟化类薄膜实现超疏水,这种仅仅通过构筑低能表面制备的超疏水表面往往稳定性差、寿命短,与基底结合力低,很容易遭到破坏;对于飞秒激光加工而言,可实现精密尺寸的可控制备,但是由于热效应、融化、毛刺和裂纹,并需要昂贵的加工设备等,使得飞秒激光加工受到了限制。光刻是实现微结构制备的一种普遍方法,然而,目前光刻掩膜只能实现亚微米和微米级的结构制备,因此,受光刻掩膜的限制大范围尺寸可调的纳米结构精确的制备,仍需探索。At present, the preparation methods of superhydrophobic surface include chemical vapor deposition, electrochemistry, template method, sol-gel method, hydrothermal method, photolithography, femtosecond laser, etc. These methods are to construct micro-nano structures on different substrates, and The surface is modified with low surface energy substances to achieve superhydrophobicity. However, electrochemical, sol-gel, and hydrothermal methods all use chemical reactions to form messy micro-nano composite structures on the substrate, which cannot achieve full-parameter controllable preparation of micro-nano structures; The fluorinated film on the surface realizes superhydrophobicity. This kind of superhydrophobic surface prepared only by constructing a low-energy surface often has poor stability, short life, low binding force with the substrate, and is easily damaged; for femtosecond laser processing, it can be The controllable preparation of precise dimensions is achieved, but due to thermal effects, melting, burrs and cracks, and the need for expensive processing equipment, femtosecond laser processing is limited. Photolithography is a common method to realize the preparation of microstructures. However, the current photolithography mask can only realize the preparation of submicron and micron-scale structures. The preparation still needs to be explored.
微观形貌决定宏观现象,实现微纳结构全参数的可控制备,为宏观现象进行定量、定性分析提供了基础。在材料表面润湿理论研究中,微观尺寸参数的变化,对材料表面形貌的占空比的影响,对微结构与水滴之间的气穴的大小的影响,对其微纳复合结构二级协同作用的影响等,都需要进行定量、定性的科学研究,然而,现阶段缺少微纳结构全参数可控制备的方法,致使无法对其机理进行探索;在工程应用中,利用微纳结构超疏水表面进行防冰的工程实践中,探索微纳结构参数的变化,对过冷水滴在基底表面粘附力,传热、及形核的影响,也很重要;在微纳光学研究领域,微纳结构尺寸参数的变化,对光在微纳结构表面的电磁场增强效应、拉曼效应有显著的影响。Microscopic morphology determines macroscopic phenomena, and the controllable preparation of all parameters of micro-nano structures is realized, which provides a basis for quantitative and qualitative analysis of macroscopic phenomena. In the study of material surface wetting theory, the change of microscopic size parameters, the impact on the duty ratio of the surface morphology of the material, the impact on the size of the air pocket between the microstructure and the water droplet, and the secondary structure of the micro-nano composite structure. The impact of synergy, etc., requires quantitative and qualitative scientific research. However, at this stage, there is a lack of methods for the full parameter controllable preparation of micro-nano structures, which makes it impossible to explore its mechanism; in engineering applications, the use of micro-nano structures In the engineering practice of anti-icing on hydrophobic surfaces, it is also very important to explore the change of micro-nano structural parameters, the influence of supercooled water droplets on the substrate surface adhesion, heat transfer, and nucleation; in the field of micro-nano optics research, micro-nano The change of the size parameter of the nanostructure has a significant impact on the electromagnetic field enhancement effect and Raman effect of light on the surface of the micro-nanostructure.
综上所述,现有微纳结构的制备方法有多种,但是这些方法均无法实现微纳复合结构全参数的可控制备,特别是在微米结构上可控的制备尺寸可调的纳米结构。然而,实现微纳结构全参数的可控制备对科学研究及工程应用都有很大的意义。因此,亟需发展一种简单、方便可控制备的方法。In summary, there are many methods for preparing micro-nano structures, but none of these methods can realize the controllable preparation of all parameters of micro-nano composite structures, especially the controllable preparation of size-tunable nanostructures on micron structures. . However, the controllable preparation of full parameters of micro-nano structures has great significance for scientific research and engineering applications. Therefore, there is an urgent need to develop a simple, convenient and controllable preparation method.
我们从微机电(MEMS)光刻技术出发,结合胶体软刻蚀的方法,先通过自组装将纳米微球组装成单层致密纳米掩膜。然后将单层致密纳米掩膜与具有微米结构的硅基底结合,通过RIE(氧等离子刻蚀),对纳米小球进行软刻蚀,调节纳米微球直径和间距,再通过体硅刻蚀硅基底,除去纳米微球就制备出了微纳复合结构,最后再用氟硅烷修饰,得到具有优越性能的超疏水表面。Starting from the microelectromechanical (MEMS) lithography technology, combined with the method of colloidal soft etching, we first assembled the nano-microspheres into a single-layer dense nano-mask through self-assembly. Then combine a single-layer dense nanomask with a silicon substrate with a micron structure, perform soft etching on the nanospheres by RIE (oxygen plasma etching), adjust the diameter and spacing of the nanospheres, and then etch silicon through bulk silicon Substrate, the micro-nano composite structure is prepared by removing the nano-microspheres, and finally modified with fluorosilane to obtain a super-hydrophobic surface with superior properties.
发明内容Contents of the invention
本发明目的在于提供一种硅基超疏水微纳结构全参数可控制备的方法。通过该方法可够精确控制微米结构、纳米结构及微纳复合二阶全参数可调制备。The purpose of the present invention is to provide a method for the controllable preparation of silicon-based superhydrophobic micro-nano structure with full parameters. The method can precisely control the second-order fully parameter-adjustable preparation of microstructures, nanostructures and micro-nano composites.
本发明的关键点在于将纳米掩膜与微米结构阵列复合及纳米结构的全参数可控制备。微米结构可通过传统的光刻技术实现长、宽、高及阵列间隙的全参数可控制备。但是要将纳米结构复合到微米结构上,就需要将纳米掩膜与微米结构阵列进行复合,然后再应用胶体软刻蚀和体硅刻蚀实现纳米结构全参数可控制备。The key point of the invention is to combine the nano mask with the micro structure array and the full parameter controllable preparation of the nano structure. The microstructure can be prepared with full parameter controllability of length, width, height and array gap through traditional photolithography technology. However, in order to compound nanostructures on microstructures, it is necessary to combine nanomasks with microstructure arrays, and then apply colloidal soft etching and bulk silicon etching to achieve full-parameter controllable preparation of nanostructures.
本发明的技术方案如下:Technical scheme of the present invention is as follows:
一种硅基超疏水微纳结构全参数可控制备,是将微米结构和纳米结构制备结合起来,通过分层制备,即通过光刻实现微米结构制备,通过胶体软刻蚀和体硅刻蚀实现纳米结构制备,微米和纳米结构的复合是通过纳米微球掩膜与微米结构阵列复合来实现的。A silicon-based superhydrophobic micro-nano structure with full parameter controllable preparation is a combination of micro-structure and nano-structure preparation, through layered preparation, that is, through photolithography to achieve micro-structure preparation, through colloidal soft etching and bulk silicon etching To realize the preparation of nanostructures, the compounding of micron and nanostructures is achieved through the compounding of nanosphere masks and microstructure arrays.
一种硅基超疏水微纳结构全参数可控制备的方法,其特征在于,包括如下步骤:A method for fully parameter-controllable preparation of a silicon-based superhydrophobic micro-nano structure, characterized in that it comprises the following steps:
步骤一:硅基微米阵列结构的制备:利用成熟的光刻技术,分别通过掩膜制备、涂胶、曝光、显影,ICP刻蚀就可制备出预设尺寸的微米结构阵列示。微米结构为方形微柱,其方柱边长a=5~20μm、高度h=10~60μm、间距b=10~120μm;Step 1: Preparation of silicon-based micro-array structure: Using mature photolithography technology, through mask preparation, glue coating, exposure, development, and ICP etching, a micro-structure array with a preset size can be prepared. The micron structure is a square microcolumn, the side length of which is a = 5-20 μm, the height h = 10-60 μm, and the spacing b = 10-120 μm;
步骤二:纳米掩膜的制备;该过程包括如下四个子步骤:Step 2: the preparation of nanomask; This process comprises following four substeps:
子步骤一:配置单分散系的纳米微球悬浊液;Sub-step 1: configuring a monodisperse nanosphere suspension;
子步骤二:通过氧等离子处理另一疏水基底,使其表面亲水,将纳米微球悬浊液旋涂于该基底上,在所述基底上形成脉络状单层纳米微球薄膜;Sub-step 2: Treat another hydrophobic substrate with oxygen plasma to make its surface hydrophilic, spin-coat the nanosphere suspension on the substrate, and form a veined single-layer nanosphere film on the substrate;
子步骤三:剥离脉络状单层纳米微球薄膜:首先静置子步骤二中旋涂有的脉络状单层纳米微球薄膜的基底,使其复原成疏水性;然后将旋涂有的脉络状单层纳米微球薄膜的该基底缓慢从上往下浸入液体中,所述液体优选为去离子水;所述脉络状单层纳米微球薄膜从该基底上剥离并悬浮于液面;Sub-step 3: Peel off the vein-shaped single-layer nano-microsphere film: first leave the substrate of the vein-shaped single-layer nano-microsphere film spin-coated in sub-step 2 to restore it to hydrophobicity; then spin-coat the vein-shaped single-layer nano-microsphere film The substrate of the single-layer nano-microsphere film is slowly immersed in the liquid from top to bottom, and the liquid is preferably deionized water; the vein-shaped single-layer nano-microsphere film is peeled off from the substrate and suspended on the liquid surface;
子步骤四:在液面滴加表面活性剂,挤推脉络状单层纳米微球薄膜组装成致密单层薄膜,完成气-液界面二次组装;Sub-step 4: Add surfactant dropwise on the liquid surface, push and push the vein-shaped single-layer nano-microsphere film to form a dense single-layer film, and complete the secondary assembly of the air-liquid interface;
步骤三:纳米掩膜与微米阵列结构复合:在步骤二的子步骤四基础上,降低液面,将所述致密单层薄膜转移到步骤一所述的硅基微米阵列结构表面上;Step 3: Recombining the nanomask with the micro-array structure: on the basis of sub-step 4 of step 2, lower the liquid level, and transfer the dense monolayer film to the surface of the silicon-based micro-array structure described in step 1;
步骤四:胶体软刻蚀,调节纳米掩膜间距及半径;Step 4: Colloidal soft etching, adjusting the distance and radius of the nanomask;
通过步骤二、三实现了致密纳米微球掩膜与微米结构阵列的复合。由于纳米微柱阵列间距是由纳米微球原始直径尺寸决定,纳米微柱的直径是由刻蚀后纳米直径决定的,因此,我们通过胶体软刻蚀,刻蚀紧密排列的纳米微球直径,以此来调节纳米阵列结构尺寸,该步骤可实现纳米掩膜直径d=200~800nm,高度h1=3μm~200nm范围变化;The compounding of the dense nano-microsphere mask and the micro-structure array is realized through steps two and three. Since the spacing of the nano-column array is determined by the original diameter of the nano-microsphere, the diameter of the nano-column is determined by the nanometer diameter after etching. Therefore, we etched the diameter of the closely arranged nano-microspheres through colloidal soft etching. In this way, the size of the nano-array structure can be adjusted. This step can realize the range of nano-mask diameter d=200-800nm and height h1=3μm-200nm;
步骤五:硅基纳米结构全参数可控制备;该步骤采用金属辅助刻蚀法刻蚀硅基底,分为两个子步骤;Step 5: Full parameter controllable preparation of silicon-based nanostructures; this step uses metal-assisted etching to etch the silicon substrate, which is divided into two sub-steps;
子步骤一:硅基表面蒸镀银,经过步骤四后,单层致密排列的纳米微球直径变小,纳米微球之间出现间隙,再通过蒸镀银,在纳米微球之间填充银层,利用原电池原理对硅基进行刻蚀,但是需要注意的是,蒸镀银层厚度不得超过软刻蚀后纳米微球的半径;Sub-step 1: Evaporate silver on the surface of the silicon base. After step 4, the diameter of the densely arranged single-layer nanospheres becomes smaller, and gaps appear between the nanospheres. Then, silver is deposited between the nanospheres by evaporating silver. Layer, using the principle of the original battery to etch the silicon base, but it should be noted that the thickness of the evaporated silver layer must not exceed the radius of the nanosphere after soft etching;
子步骤二:金属辅助刻蚀溶液配制,通过子步骤一已在纳米微球之间蒸镀了一层银,将处理好的硅基底放在HF和H2O2混合溶液中进行刻蚀;Sub-step 2: preparation of metal-assisted etching solution, a layer of silver has been evaporated between the nano-microspheres through sub-step 1, and the treated silicon substrate is etched in a mixed solution of HF and H 2 O 2 ;
子步骤三:将步骤四所获硅基底放在干燥箱中进行加温处理,增大纳米小球与硅基底的粘附力;然后放入子步骤二所配溶液中,进行反应。通过控制反应时间,即可控制纳米微柱的深度;Sub-step 3: put the silicon substrate obtained in step 4 in a drying oven for heating treatment to increase the adhesion between the nanospheres and the silicon substrate; then put it into the solution prepared in sub-step 2 for reaction. By controlling the reaction time, the depth of nano-columns can be controlled;
子步骤四:将刻蚀后的硅基底放在四氢呋喃中浸泡去除纳米微球;Sub-step 4: Soak the etched silicon substrate in tetrahydrofuran to remove the nano-microspheres;
步骤六:氟硅烷修饰硅基微纳复合结构,制备出具有超疏水性能表面。Step 6: Fluorosilane modifies the silicon-based micro-nano composite structure to prepare a super-hydrophobic surface.
本发明的有益效果:Beneficial effects of the present invention:
本发明首次提出了一种微纳复合结构全参数可控制备方法,尤其是在微米结构上复合的纳米结构全尺寸可控制备,该方法为微纳结构超疏水表面的科学研究和工程实践提供了研究基础,有效的将材料表面的宏观现象与微观结构联系起来,为定量、定性的探索超疏水表面的物理化学性质提供了基础。该方法是将胶体软刻蚀与体硅刻蚀结合起来,工艺可控性强,操作简单,成本低廉,加工精度高。The present invention proposes a full-parameter controllable preparation method of a micro-nano composite structure for the first time, especially a full-scale controllable preparation of a nanostructure compounded on a micron structure. The research basis is established, and the macroscopic phenomenon and microstructure of the material surface are effectively connected, which provides a basis for quantitative and qualitative exploration of the physical and chemical properties of the superhydrophobic surface. The method combines colloidal soft etching and bulk silicon etching, has strong process controllability, simple operation, low cost and high processing precision.
附图说明Description of drawings
图1示出了硅基微米结构阵列示意图;Figure 1 shows a schematic diagram of a silicon-based microstructure array;
图2示出了单层致密纳米掩膜整体光学显微镜图;Figure 2 shows a monolayer dense nano-mask overall optical microscope image;
图3示出了单层致密纳米微球局部扫描电镜图;Figure 3 shows a partial scanning electron microscope image of a single-layer dense nanosphere;
图4示出了纳米掩膜与微米结构阵列复合光学显微镜图片;Figure 4 shows a composite optical microscope image of a nanomask and a microstructure array;
图5示出了经胶体软刻蚀后纳米微球掩膜直径减小微观图;Figure 5 shows a microscopic view of the reduced diameter of the nanosphere mask after colloidal soft etching;
图6示出了微纳复合结构扫描电子显微镜照片;Figure 6 shows a scanning electron micrograph of the micro-nano composite structure;
图7示出了单个微纳复合结构的扫描电子显微镜微观图;Figure 7 shows a scanning electron microscope microscopic view of a single micro-nano composite structure;
图8示出了硅基微纳超疏水表面静态接触角测量。Figure 8 shows the measurement of the static contact angle of the silicon-based micro-nano superhydrophobic surface.
具体实施方式detailed description
以下通过具体实例对本发明进一步详细说明。The present invention will be further described in detail below through specific examples.
实施例1Example 1
本实施案例中的超疏水微纳复合结构为:一种硅基超疏水微纳复合结构,硅基表面有微米级的方柱阵列,在方柱顶端和硅基底端有纳米微柱阵列。微米方柱结构边长a=10μm,高度h1=20μm,相邻两个微米结构间距为b=20μm;微米结构上复合纳米结构尺寸:直径d=600nm,高度h2=1.5μm间距L=900nm。The super-hydrophobic micro-nano composite structure in this implementation case is: a silicon-based super-hydrophobic micro-nano composite structure. There are micron-scale square pillar arrays on the surface of the silicon substrate, and there are nano-micro-pillar arrays on the top of the square pillars and the end of the silicon base. The side length of the micron square column structure is a = 10 μm, the height h 1 = 20 μm, and the distance between two adjacent micron structures is b = 20 μm; the size of the composite nanostructure on the micron structure: diameter d = 600 nm, height h 2 = 1.5 μm, distance L = 900nm.
本实施案例可控制备预设计尺寸的超疏水微纳复合结构包括如下步骤:In this implementation case, the controllable preparation of superhydrophobic micro-nano composite structures with pre-designed dimensions includes the following steps:
步骤一:硅基微米阵列结构的制备:首先设计光刻掩膜使阵列微米结构尺寸参数为a=10μm,间距b=20μm。然后,通过光刻将图形转移到光刻胶上,然后在通过电感耦合等离子体反应刻蚀(ICP)刻蚀硅基底,刻蚀深度h1=20μm;其采用的刻蚀工艺参数为:射频功率RF=100w,压强为20pa;SF6,气体流量100sccm/min,刻蚀时间12s;C4F6,气体流量80sccm/min,钝化时间9s;刻蚀/钝化循环次数16次;刻蚀后用丙酮去除光刻胶,去离子水冲洗,氮气吹干,就获得了具有预设尺寸的微米结构阵列,如图1所示。Step 1: Preparation of the silicon-based micro-array structure: first, a photolithography mask is designed so that the size parameter of the micro-array structure is a=10 μm, and the spacing b=20 μm. Then, the pattern is transferred to the photoresist by photolithography, and then the silicon substrate is etched by inductively coupled plasma reactive etching (ICP), and the etching depth h 1 =20 μm; the etching process parameters used are: radio frequency Power RF=100w, pressure 20pa; SF 6 , gas flow rate 100 sccm/min, etching time 12s; C 4 F 6 , gas flow rate 80 sccm/min, passivation time 9s; etching/passivation cycle times 16 times; After etching, the photoresist was removed with acetone, rinsed with deionized water, and dried with nitrogen gas to obtain a micron structure array with a preset size, as shown in FIG. 1 .
步骤二:纳米掩膜的制备;该过程包括如下四个子步骤:Step 2: the preparation of nanomask; This process comprises following four substeps:
子步骤一:配置单分散系的纳米微球悬浊液;本实施例中采用的是直径为900nm的聚苯乙烯纳米小球。Sub-step 1: preparing a monodisperse nanosphere suspension; in this embodiment, polystyrene nanospheres with a diameter of 900 nm are used.
子步骤二:通过氧等离子处理另一疏水基底,使其表面亲水,将纳米微球悬浊液旋涂于该基底上,在所述基底上形成脉络状单层纳米微球薄膜;Sub-step 2: Treat another hydrophobic substrate with oxygen plasma to make its surface hydrophilic, spin-coat the nanosphere suspension on the substrate, and form a veined single-layer nanosphere film on the substrate;
子步骤三:剥离脉络状单层纳米微球薄膜:首先静置子步骤二中旋涂有的脉络状单层纳米微球薄膜的基底,使其复原成疏水性;然后将旋涂有的脉络状单层纳米微球薄膜的该基底缓慢从上往下浸入液体中,所述液体为去离子水;所述脉络状单层纳米微球薄膜从该基底上剥离并悬浮于液面;Sub-step 3: Peel off the vein-shaped single-layer nano-microsphere film: first leave the substrate of the vein-shaped single-layer nano-microsphere film spin-coated in sub-step 2 to restore it to hydrophobicity; then spin-coat the vein-shaped single-layer nano-microsphere film The substrate of the single-layer nano-microsphere film is slowly immersed in the liquid from top to bottom, and the liquid is deionized water; the vein-shaped single-layer nano-microsphere film is peeled off from the substrate and suspended on the liquid surface;
子步骤四:在液面滴加表面活性剂,挤推脉络状单层纳米微球薄膜组装成致密单层薄膜,完成气-液界面二次组装,该单层致密纳米微球薄膜光学宏观观测图如图2所示,扫面电子显微微观图如图3所示Sub-step 4: Add a surfactant dropwise on the liquid surface, push and push the venation-shaped single-layer nano-microsphere film to assemble a dense single-layer film, and complete the secondary assembly of the gas-liquid interface. The single-layer dense nano-microsphere film is optically macroscopically observed The figure is shown in Figure 2, and the microscopic view of the scanning electron microscope is shown in Figure 3
步骤三:纳米掩膜与微米阵列结构复合:在步骤二的子步骤四基础上,降低液面,将所述致密单层薄膜转移到步骤一所述的硅基微米阵列结构表面上,如图4所示纳米掩膜与微米结构阵列复合光学显微镜图片。Step 3: Recombination of the nanomask and the micron array structure: on the basis of substep 4 of step 2, the liquid level is lowered, and the dense monolayer film is transferred to the surface of the silicon-based micron array structure described in step 1, as shown in the figure 4 shows the composite optical microscope picture of nanomask and microstructure array.
步骤四:胶体软刻蚀,调节纳米掩膜间距及半径;Step 4: Colloidal soft etching, adjusting the distance and radius of the nanomask;
通过步骤二、三实现了致密纳米微球掩膜与微米结构阵列的复合。由于纳米微柱阵列间距是由纳米微球原始直径尺寸决定,纳米微柱的直径是由刻蚀后纳米直径决定的,因此,我们通过胶体软刻蚀,刻蚀紧密排列的纳米微球直径,以此来调节纳米阵列结构尺寸,该步骤可实现纳米掩膜直径d=200~800nm,高度h1=3μm~200nm范围变化。The compounding of the dense nano-microsphere mask and the micro-structure array is realized through steps two and three. Since the spacing of the nano-column array is determined by the original diameter of the nano-microsphere, the diameter of the nano-column is determined by the nanometer diameter after etching. Therefore, we etched the diameter of the closely arranged nano-microspheres through colloidal soft etching. In this way, the size of the nano-array structure can be adjusted, and this step can realize the range of nano-mask diameter d=200-800nm and height h1=3μm-200nm.
本实施例中,应用氧等离子刻蚀(RIE)对纳米微球进行软刻蚀具体工艺参数如下:O2气体流量100sccm/min,CF4气体流量为9.0sccm/min室内压强为:26pa,气体射频功为100w,刻蚀时间为30s~120s,主要工作气体为O2,刻蚀时间决定了纳米微球的最终直径,如图5所示致密排列的纳米微球直径变小了,纳米微球之间出现了间隙,实现了纳米掩膜尺寸的调控。In the present embodiment, the application of oxygen plasma etching (RIE) to carry out soft etching of nano-microspheres specific process parameters are as follows: O 2 gas flow 100sccm/min, CF4 gas flow 9.0sccm/min chamber pressure: 26pa, gas radio frequency The power is 100w, the etching time is 30s~120s, and the main working gas is O 2 . The etching time determines the final diameter of the nanospheres. As shown in Figure 5, the diameter of the densely arranged nanospheres becomes smaller. There is a gap between them, which realizes the regulation of the size of the nanomask.
步骤五:硅基纳米结构全参数可控制备;该步骤采用金属辅助刻蚀法刻蚀硅基底,分为两个子步骤。Step 5: full-parameter controllable preparation of silicon-based nanostructures; this step uses metal-assisted etching to etch the silicon substrate, which is divided into two sub-steps.
子步骤一:硅基表面蒸镀银,经过步骤四后,单层致密排列的纳米微球直径变小,纳米微球之间出现间隙,再通过蒸镀银,在纳米微球之间填充银层,利用原电池原理对硅基进行刻蚀,本实施例中,银层厚度h3=40nm。Sub-step 1: Evaporate silver on the surface of the silicon base. After step 4, the diameter of the densely arranged single-layer nanospheres becomes smaller, and gaps appear between the nanospheres. Then, silver is deposited between the nanospheres by evaporating silver. layer, the silicon base is etched using the principle of a galvanic cell, and in this embodiment, the thickness of the silver layer is h 3 =40nm.
在硅基表面蒸镀银的具体工艺如下:真空度为1.5×10-4pa,蒸发源的温度为1100℃,靶材为银靶。The specific process of evaporating silver on the surface of the silicon substrate is as follows: the degree of vacuum is 1.5×10 -4 Pa, the temperature of the evaporation source is 1100°C, and the target is silver.
子步骤二:金属辅助刻蚀溶液配制,通过子步骤一已在纳米微球之间蒸镀了一层银,将处理好的硅基底放在HF和H2O2混合溶液中进行刻蚀,具体刻蚀溶液配制参数为:取实验用HF(质量分数为39%)溶液18ml,取H2O2(质量分数为60%)溶液5ml,去离子水77ml,均匀混合。Sub-step 2: preparation of metal-assisted etching solution, through sub-step 1, a layer of silver has been evaporated between the nano-microspheres, and the treated silicon substrate is etched in a mixed solution of HF and H 2 O 2 , Specific etching solution preparation parameters are as follows: Take 18ml of HF (mass fraction 39%) solution for experiment, 5ml H 2 O 2 (mass fraction 60%) solution, 77ml deionized water, and mix them evenly.
子步骤三:将步骤四所获硅基底放在干燥箱中进行加温处理,增大纳米小球与硅基底的粘附力,具体操作:将步骤四60℃处理1h。然后放入子步骤二所配溶液中,进行反应。本实施例中将镀银的硅基底放在金属辅助刻蚀液中反应8min,可得高度为1.5μm的纳米微柱阵列。Sub-step 3: heat the silicon substrate obtained in step 4 in a drying oven to increase the adhesion between the nanospheres and the silicon substrate. Specific operation: treat in step 4 at 60° C. for 1 hour. Then put it into the solution prepared in sub-step 2 for reaction. In this example, the silver-plated silicon substrate was placed in the metal-assisted etching solution for 8 minutes to react, and a nano-column array with a height of 1.5 μm was obtained.
子步骤四:将刻蚀后的硅基底放在四氢呋喃中浸泡1h,去除纳米微球,可得如图6所示的微纳复合结构。Sub-step 4: Soak the etched silicon substrate in tetrahydrofuran for 1 hour, remove the nano-microspheres, and obtain a micro-nano composite structure as shown in FIG. 6 .
步骤六:氟硅烷修饰硅基微纳复合结构,制备出具有优越超疏水性能表面:将所制备的硅基微纳复合结构放入真空箱中,抽真空5~15min,通入氮气,等气压稳定后,揭开真空箱,在硅基微纳复合结构附近的培养皿中滴加2~3ml氟硅烷,盖上盖子,再次抽真空,真空度稳定后,静置2~4h,即获得本实施例所需的具有超疏水性能的硅基微纳复合结构,经测试该微纳复合结构表面静态接触角大于150°,展现了优良的超疏水性如图8所示。Step 6: Fluorosilane modification of the silicon-based micro-nano composite structure to prepare a surface with superior super-hydrophobic properties: put the prepared silicon-based micro-nano composite structure in a vacuum box, vacuumize for 5-15 minutes, and pass in nitrogen gas to wait for the pressure After stabilization, uncover the vacuum box, add 2-3ml of fluorosilane dropwise to the petri dish near the silicon-based micro-nano composite structure, cover the lid, and then vacuumize again. After the vacuum degree is stable, let it stand for 2-4 hours to obtain the The silicon-based micro-nano composite structure with superhydrophobic properties required in the embodiment, the static contact angle on the surface of the micro-nano composite structure is greater than 150° after testing, showing excellent superhydrophobicity, as shown in FIG. 8 .
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