CN106129230A - A kind of LED chip producing amber light - Google Patents
A kind of LED chip producing amber light Download PDFInfo
- Publication number
- CN106129230A CN106129230A CN201610850131.8A CN201610850131A CN106129230A CN 106129230 A CN106129230 A CN 106129230A CN 201610850131 A CN201610850131 A CN 201610850131A CN 106129230 A CN106129230 A CN 106129230A
- Authority
- CN
- China
- Prior art keywords
- led chip
- phosphor
- amber light
- doped
- amber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000011248 coating agent Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims abstract description 24
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims abstract description 16
- 150000004767 nitrides Chemical class 0.000 claims abstract description 16
- 102100032047 Alsin Human genes 0.000 claims abstract description 4
- 101710187109 Alsin Proteins 0.000 claims abstract description 4
- 239000000843 powder Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000741 silica gel Substances 0.000 claims description 8
- 229910002027 silica gel Inorganic materials 0.000 claims description 8
- -1 phosphor Yttrium aluminum Chemical compound 0.000 claims 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims 1
- 230000004907 flux Effects 0.000 abstract description 18
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
Landscapes
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
本发明涉及一种产生琥珀色光的LED芯片，属于汽车及交通控制领域。其结构为蓝色LED芯片上覆盖荧光粉涂层，其特征在于：荧光粉涂层由两种荧光粉组成，一种是掺铈钇铝柘榴石荧光粉Y3Al5O12:Ce3+，另一种是掺铒氮化物荧光粉CaAlSiN3:Eu2+或(Sr,Ca)AlSiN3:Eu2+，蓝色LED芯片发射的蓝色光透过荧光粉涂层，转换为琥珀色光。本发明的有益效果是：（1）LED芯片光通量不受温度升高的影响而显著减弱，同时在工作电流增长时光通量也持续增长；（2）荧光粉涂层在高温高湿环境下具有很强的化学稳定性而不受干扰；（3）LED芯片具有很高的琥珀色光转换效率，能够得到具有高纯度和高饱和度的琥珀色光；（4）节省LED芯片制造成本。
The invention relates to an LED chip generating amber light, which belongs to the field of automobile and traffic control. Its structure is that the blue LED chip is covered with a phosphor coating, which is characterized in that: the phosphor coating is composed of two phosphors, one is cerium-doped yttrium aluminum garnet phosphor Y 3 Al 5 O 12 :Ce 3+ , the other is erbium-doped nitride phosphor CaAlSiN 3 :Eu 2+ or (Sr,Ca)AlSiN 3 :Eu 2+ , the blue light emitted by the blue LED chip passes through the phosphor coating and is converted into amber light. The beneficial effects of the present invention are: (1) The luminous flux of the LED chip is not significantly weakened by the temperature rise, and at the same time, the luminous flux continues to increase when the working current increases; (2) The phosphor coating has a strong Strong chemical stability without interference; (3) LED chips have high amber light conversion efficiency, and amber light with high purity and high saturation can be obtained; (4) Save LED chip manufacturing costs.
Description
技术领域technical field
本发明属于汽车及交通控制领域，具体是一种应用在汽车灯或者交通信号灯上的产生琥珀色光的LED芯片。The invention belongs to the field of automobile and traffic control, in particular to an LED chip for generating amber light applied to automobile lamps or traffic signal lamps.
背景技术Background technique
琥珀色（amber color）是一种介于黄色和咖啡色之间的颜色，被广泛用于汽车及交通控制领域，如汽车的转向灯一般为琥珀色，三色交通信号灯中的“黄灯”实际也是琥珀色。Amber (amber color) is a color between yellow and brown, which is widely used in the field of automobiles and traffic control. Also amber.
早期为了获得琥珀色光，一般直接选用琥珀色LED（light emitting diod，发光二极管）芯片生成琥珀色光。琥珀色LED芯片由铝镓铟磷（AlGaInP）晶体制造。该种芯片因为不需要荧光粉的覆盖，因此称为“直接发射型琥珀色LED芯片”。铝镓铟磷晶体制造的琥珀色LED芯片存在两个缺点：一是随着散热器温度（二极管节点温度）的升高，LED光通量显著减小；另一个缺点是在工作电流达到一定数值并持续增加时，光通量却不再增加，甚至还有小幅度的减少。In the early stage, in order to obtain amber light, an amber LED (light emitting diode, light emitting diode) chip was generally directly selected to generate amber light. Amber LED chips are fabricated from aluminum gallium indium phosphide (AlGaInP) crystals. This kind of chip is called "direct emission type amber LED chip" because it does not need the coverage of phosphor powder. Amber LED chips made of AlGaInP crystals have two disadvantages: one is that as the temperature of the heat sink (diode node temperature) increases, the LED luminous flux decreases significantly; the other disadvantage is that when the operating current reaches a certain value and continues When increasing, the luminous flux no longer increases, and even has a small decrease.
相比来说，由铝镓氮（AlGaN）晶体制造的蓝色LED芯片不存在上述两个问题。在散热器温度升高时，蓝色LED芯片的光通量几乎不受影响；在工作电流增加时，光通量也持续增加。铝镓铟磷晶体和铝镓氮晶体的上述区别让我们设想另一种产生琥珀色光的方案，即使用铝镓氮晶体制造的蓝色LED芯片作为光泵，在LED芯片上覆盖特定的荧光粉（phosphor）产生琥珀色光。In contrast, blue LED chips made of aluminum gallium nitride (AlGaN) crystals do not have the above two problems. When the heat sink temperature rises, the luminous flux of the blue LED chip is hardly affected; when the operating current increases, the luminous flux also continues to increase. The above differences between AlGaInP crystals and AlGaN crystals allow us to imagine another scheme for generating amber light, that is, using blue LED chips made of AlGaN crystals as light pumps, and covering specific phosphors on the LED chips (phosphor) produces amber light.
关于荧光粉的选择，目前一些企业选用硅酸盐类荧光粉，如(Sr,Ba,Ca)3SiO5:Eu2 +，该种荧光粉最大的问题是其对高温高湿环境敏感性较高，高温环境下的水解作用使得硅酸盐类荧光粉的发光效率显著降低。这会使最终所得颜色严重偏离目标颜色琥珀色的范围，更无法得到具有高纯度和高饱和度的琥珀色光。Regarding the choice of phosphors, some companies currently use silicate phosphors, such as (Sr,Ba,Ca) 3 SiO 5 :Eu 2 + , the biggest problem with this phosphor is that it is more sensitive to high temperature and high humidity environments. High, the hydrolysis in the high temperature environment makes the luminous efficiency of the silicate phosphor significantly reduced. This will cause the final color to deviate greatly from the range of the target color amber, and it is impossible to obtain amber light with high purity and saturation.
美国Lumileds公司利用氮基荧光粉(Ba,Sr)2Si5N8:Eu2+生成琥珀色光，该种荧光粉性质稳定，也拥有较高的发光效率。但该荧光粉存在以下问题：钡（Ba）和锶（Sr）的比例以及铕（Eu）的杂质浓度要调整到适当比例，程序较为繁琐；该荧光粉的涂层需要形成致密烧结的透明陶瓷结构，烧结过程非常复杂且昂贵。American Lumileds uses nitrogen-based phosphor (Ba,Sr) 2 Si 5 N 8 :Eu 2+ to generate amber light. This phosphor is stable and has high luminous efficiency. However, the phosphor has the following problems: the ratio of barium (Ba) to strontium (Sr) and the impurity concentration of europium (Eu) must be adjusted to an appropriate ratio, and the procedure is cumbersome; the coating of the phosphor needs to form a densely sintered transparent ceramic structure, the sintering process is very complicated and expensive.
发明内容Contents of the invention
本发明的目的是提供一种产生琥珀色光的LED芯片，以解决现有产生琥珀色光的LED芯片在高温和高湿度环境中化学稳定性较低、发光效率低、成本较高的问题。The object of the present invention is to provide an LED chip that produces amber light, so as to solve the problems of low chemical stability, low luminous efficiency and high cost of existing amber light-producing LED chips in high-temperature and high-humidity environments.
本发明中粘合剂的技术方案为：The technical scheme of adhesive in the present invention is:
一种产生琥珀色光的LED芯片，其结构为蓝色LED芯片上覆盖荧光粉涂层，荧光粉涂层由两种荧光粉组成，一种是掺铈钇铝柘榴石红色荧光粉Y3Al5O12:Ce3+，另一种是掺铒氮化物黄色荧光粉CaAlSiN3:Eu2+或(Sr,Ca)AlSiN3:Eu2+；蓝色LED芯片发射的蓝色光透过荧光粉涂层，转换为琥珀色光。An LED chip that produces amber light. Its structure is that the blue LED chip is covered with a phosphor coating. The phosphor coating is composed of two phosphors, one is cerium-doped yttrium aluminum garnet red phosphor Y 3 Al 5 O 12 :Ce 3+ , the other is erbium-doped nitride yellow phosphor CaAlSiN 3 :Eu 2+ or (Sr,Ca)AlSiN 3 :Eu 2+ ; the blue light emitted by the blue LED chip passes through the phosphor coating layer, converted to amber light.
所述掺铈钇铝柘榴石荧光粉与掺铒氮化物荧光粉的质量比优选为0.5至2。The mass ratio of the cerium-doped yttrium aluminum garnet phosphor powder to the erbium-doped nitride phosphor powder is preferably 0.5-2.
所述荧光粉涂层中优选加入硅胶。硅胶能够增加荧光粉的导热性能。Silica gel is preferably added to the phosphor coating. Silica gel can increase the thermal conductivity of the phosphor.
所述荧光粉涂层厚度优选为70至150微米。The phosphor coating thickness is preferably 70 to 150 microns.
所述掺铈钇铝柘榴石荧光粉与掺铒氮化物荧光粉混合在一起，混合后的荧光粉涂层覆盖在蓝色LED芯片上。The cerium-doped yttrium aluminum garnet phosphor powder is mixed with the erbium-doped nitride phosphor powder, and the mixed phosphor powder coating is covered on the blue LED chip.
所述掺铈钇铝柘榴石荧光粉涂层覆盖在蓝色LED芯片上，掺铒氮化物荧光粉覆盖在掺铈钇铝柘榴石荧光粉上。The cerium-doped yttrium aluminum garnet phosphor coating is covered on the blue LED chip, and the erbium-doped nitride phosphor is covered on the cerium-doped yttrium aluminum garnet phosphor.
本发明的有益效果：（1）LED芯片光通量不受温度升高的影响而显著减弱，同时在工作电流增长时光通量也持续增长；（2）荧光粉涂层在高温高湿环境下具有很强的化学稳定性而不受干扰；（3）LED芯片具有很高的琥珀色光转换效率，能够得到具有高纯度和高饱和度的琥珀色光；（4）节省LED芯片制造成本。Beneficial effects of the present invention: (1) The luminous flux of the LED chip is not significantly weakened by temperature rise, and at the same time, the luminous flux continues to increase when the working current increases; (2) The phosphor coating has a strong (3) The LED chip has a high amber light conversion efficiency, and can obtain amber light with high purity and high saturation; (4) Save the manufacturing cost of the LED chip.
附图说明Description of drawings
图1是直接发射型琥珀色LED芯片与本发明LED芯片在工作电流达到700毫安后散热器温度和LED光通量的关系示意图。Fig. 1 is a schematic diagram of the relationship between the temperature of the radiator and the luminous flux of the LED after the working current of the amber LED chip of the direct emission type and the LED chip of the present invention reaches 700 mA.
图2是直接发射型琥珀色LED芯片与本发明LED芯片在10毫秒脉冲电流情况下工作电流和LED光通量的关系示意图。Fig. 2 is a schematic diagram of the relationship between the working current and the LED luminous flux of the direct emission type amber LED chip and the LED chip of the present invention under the condition of 10 millisecond pulse current.
图3是本发明LED芯片产生的琥珀色光以及直接发射型琥珀色LED芯片产生的琥珀色光在国际照明委员会1931颜色空间（CIE1931 Color Space）坐标体系中的色度坐标示意图。3 is a schematic diagram of the chromaticity coordinates of the amber light produced by the LED chip of the present invention and the amber light produced by the direct emission amber LED chip in the CIE1931 Color Space coordinate system.
附图标记说明：1-直接发射型琥珀色LED发射的琥珀光、2-本发明LED所产生的琥珀色光、3-国际民航组织对交通琥珀色光的范围、4-未转换完全的光、5-三阶麦克亚当椭圆。Explanation of reference numerals: 1-amber light emitted by direct emission type amber LED, 2-amber light produced by LED of the present invention, 3-International Civil Aviation Organization's range of traffic amber light, 4-incompletely converted light, 5 - Third order MacAdam ellipse.
具体实施方式detailed description
下面结合具体实施例和附图，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容后，本领域技术人员可以对本发明做各种改动或修改，这些等价形式同样落于本申请所附权利要求所限定的范围。The present invention will be further described below in conjunction with specific embodiments and accompanying drawings. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the teachings of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.
实施例1：Example 1:
产生琥珀色光的LED芯片，其结构为蓝色LED芯片上覆盖荧光粉涂层，荧光粉涂层中加入硅胶。荧光粉由两种荧光粉组成，一种是掺铈钇铝柘榴石红色荧光粉Y3Al5O12:Ce3+，另一种是掺铒氮化物黄色荧光粉CaAlSiN3:Eu2+，两种荧光粉混合在一起，其中加入硅胶，二种荧光粉质量比控制在0.5-2之间，将上述混合后的荧光粉涂覆在蓝色LED芯片上，荧光粉涂层厚度控制在70-150微米之间。The LED chip that produces amber light has a structure that the blue LED chip is covered with a phosphor coating, and silica gel is added to the phosphor coating. The phosphor consists of two phosphors, one is cerium-doped yttrium aluminum garnet red phosphor Y 3 Al 5 O 12 :Ce 3+ , the other is erbium-doped nitride yellow phosphor CaAlSiN 3 :Eu 2+ , The two phosphors are mixed together, adding silica gel, the mass ratio of the two phosphors is controlled between 0.5-2, and the above mixed phosphor is coated on the blue LED chip, and the thickness of the phosphor coating is controlled at 70 -150 microns.
本发明中采用的两种荧光粉均是常见的荧光粉，成本低于美国Lumileds公司所用的荧光粉(Ba,Sr)2Si5N8:Eu2+，同时不需要经过复杂而昂贵的烧结过程。此外，该两种荧光粉均具有面对高温和高湿度很强的化学稳定性，并具有很高的蓝光转换到琥珀色光的转换效率；且不会影响蓝色LED芯片在散热器温度升高或者工作电流增大时的表现。The two phosphors used in the present invention are common phosphors, and the cost is lower than that of the phosphor (Ba,Sr) 2 Si 5 N 8 :Eu 2+ used by Lumileds in the United States, and does not require complicated and expensive sintering process. In addition, the two phosphors have strong chemical stability in the face of high temperature and high humidity, and have high conversion efficiency from blue light to amber light; and will not affect the temperature rise of the blue LED chip in the radiator. Or the performance when the working current increases.
实施例2：Example 2:
产生琥珀色光的LED芯片，其结构为蓝色LED芯片上覆盖荧光粉涂层，荧光粉涂层中加入硅胶。荧光粉由两种荧光粉组成，一种是掺铈钇铝柘榴石红色荧光粉Y3Al5O12:Ce3+，另一种是掺铒氮化物黄色荧光粉CaAlSiN3:Eu2+，两种荧光粉质量比为1:1，荧光粉涂层厚度为150微米。The LED chip that produces amber light has a structure that the blue LED chip is covered with a phosphor coating, and silica gel is added to the phosphor coating. The phosphor consists of two phosphors, one is cerium-doped yttrium aluminum garnet red phosphor Y 3 Al 5 O 12 :Ce 3+ , the other is erbium-doped nitride yellow phosphor CaAlSiN 3 :Eu 2+ , The mass ratio of the two phosphors is 1:1, and the thickness of the phosphor coating is 150 microns.
荧光粉的覆盖方式为：先将掺铈钇铝柘榴石黄色荧光粉与硅胶的混合物覆盖在蓝色LED芯片上，再将掺铒氮化物红色荧光粉与硅胶的混合物覆盖在蓝色LED芯片上。分层覆盖方式，相比于如实施例1中将两种荧光粉混合一次性覆盖的方式，掺铈钇铝柘榴石黄色荧光粉产生的黄光能够更多地与掺铒氮化物红色荧光粉反应，从而产生更多的琥珀色光，得到更加完全的转换效果。The covering method of the phosphor powder is as follows: first, the mixture of cerium-doped yttrium aluminum garnet yellow phosphor powder and silica gel is covered on the blue LED chip, and then the mixture of erbium-doped nitride red phosphor powder and silica gel is covered on the blue LED chip . Layered coverage, compared to the one-time coverage of mixing two phosphors as in Example 1, the yellow light produced by the cerium-doped yttrium aluminum garnet yellow phosphor can be more compatible with the erbium-doped nitride red phosphor reaction, resulting in more amber light for a more complete conversion.
图1是直接发射型琥珀色LED芯片与本实施例LED芯片在工作电流达到700毫安后散热器温度和LED光通量的关系示意图，横轴是散热器温度（单位：摄氏度），纵轴是光通量（单位：流明）。如图1中A曲线所示，直接发射型琥珀色LED芯片在散热器温度从20摄氏度升至100摄氏度的过程中光通量显著降低，从72流明下降到12流明，幅度约83%；而如B曲线所示，本发明LED芯片在散热器温度从20摄氏度升至100摄氏度的过程中其发光通量从80流明减少到72流明，仅仅减少10%。Fig. 1 is a schematic diagram of the relationship between the direct emission type amber LED chip and the LED chip of this embodiment after the operating current reaches 700 mA and the LED luminous flux. The horizontal axis is the radiator temperature (unit: Celsius), and the vertical axis is the luminous flux. (unit: lumens). As shown in curve A in Figure 1, the luminous flux of the direct-emitting amber LED chip decreases significantly when the temperature of the heat sink rises from 20 degrees Celsius to 100 degrees Celsius, from 72 lumens to 12 lumens, with a range of about 83%; and as B As shown in the curve, the luminous flux of the LED chip of the present invention decreases from 80 lumens to 72 lumens when the temperature of the radiator rises from 20 degrees Celsius to 100 degrees Celsius, which is only a 10% reduction.
图2是直接发射型琥珀色LED芯片与本实施例LED芯片在10毫秒脉冲电流情况下工作电流和LED光通量的关系示意图，横轴是工作电流（单位：毫安），纵轴是光通量（单位：流明）。如图2中A曲线所示，直接发射型琥珀色LED芯片随着工作电流达到一定值（1300毫安）时光通量即不再增加，甚至有小幅减弱；而如B曲线所示，本发明LED芯片随着工作电流的增加光通量持续增加。Fig. 2 is a schematic diagram of the relationship between the direct emission type amber LED chip and the LED chip of this embodiment under the condition of 10 millisecond pulse current and LED luminous flux, the horizontal axis is the working current (unit: milliampere), and the vertical axis is the luminous flux (unit: :lumen). As shown in the curve A in Figure 2, the luminous flux of the direct emission type amber LED chip does not increase as the operating current reaches a certain value (1300 mA), and even slightly weakens; and as shown in the curve B, the LED chip of the present invention The luminous flux of the chip continues to increase with the increase of the working current.
图3是本实施例LED芯片产生的琥珀色光以及直接发射型琥珀色LED芯片产生的琥珀色光在国际照明委员会1931颜色空间（CIE1931 Color Space）坐标体系中的色度坐标示意图。每种特定光颜色在国际照明委员会1931颜色空间坐标体系都拥有其特定的色度坐标，即横轴的x值（红色分量）和纵轴的y值（绿色分量）。图3中的长线是纯光谱色坐标点的汇集，其中直接发射型琥珀色LED发射的琥珀光1波长为590纳米，坐标位于长线上。国际民航组织对交通琥珀色光的范围3见图3中的四边形，色度坐标落在这个范围的光颜色符合交通琥珀色光的标准。如图3所示，如果运用的荧光粉效果不佳，蓝光转换效率不高，只能得到未转换完全的光4，从而落在琥珀色光范围之外。而本发明LED所产生的琥珀色光2，坐标与直接发射型琥珀色LED发射的琥珀光1坐标非常接近，且落入国际民航组织对交通琥珀色光的范围3之内。图3中虚线椭圆形为三阶麦克亚当椭圆5，三阶麦克亚当椭圆是人眼对色彩的最小视觉可觉差范围，即同在三阶麦克亚当椭圆范围内的两个颜色，人眼无法分辨其区别。本发明LED所产生的琥珀色光2以及直接发射型琥珀色LED发射的琥珀光1色度坐标位于同一三阶麦克亚当椭圆5范围内。本发明LED芯片对于蓝光转换为琥珀色光具有很高的转换效率。3 is a schematic diagram of the chromaticity coordinates of the amber light generated by the LED chip of this embodiment and the amber light generated by the direct emission amber LED chip in the CIE1931 Color Space coordinate system. Each specific light color has its specific chromaticity coordinates in the International Commission on Illumination 1931 color space coordinate system, that is, the x value (red component) on the horizontal axis and the y value (green component) on the vertical axis. The long line in Figure 3 is a collection of pure spectral color coordinate points, where the amber light 1 emitted by the direct emission amber LED has a wavelength of 590 nanometers, and the coordinates are located on the long line. For the range 3 of traffic amber light by ICAO, see the quadrilateral in Figure 3, and the color of light whose chromaticity coordinates fall within this range meets the standard for traffic amber light. As shown in Figure 3, if the phosphor used is not effective, the blue light conversion efficiency is not high, and only incompletely converted light 4 can be obtained, which falls outside the range of amber light. The coordinates of the amber light 2 produced by the LED of the present invention are very close to the coordinates of the amber light 1 emitted by the direct emission type amber LED, and fall within the scope 3 of the traffic amber light of the International Civil Aviation Organization. The dotted ellipse in Figure 3 is the third-order MacAdam ellipse 5, which is the range of the minimum visually perceptible difference of the human eye to the color, that is, the two colors within the range of the third-order MacAdam ellipse cannot be detected by the human eye. discern the difference. The chromaticity coordinates of the amber light 2 produced by the LED of the present invention and the amber light 1 emitted by the direct emission type amber LED are within the range of the same third-order MacAdam ellipse 5 . The LED chip of the present invention has high conversion efficiency for converting blue light into amber light.
实施例3：Example 3:
与实施例2基本相同，不同之处在于：掺铒氮化物为(Sr,Ca)AlSiN3:Eu2+。It is basically the same as Example 2, except that the erbium-doped nitride is (Sr,Ca)AlSiN 3 :Eu 2+ .
实施例4：Example 4:
与实施例2基本相同，不同之处在于：掺铈钇铝柘榴石荧光粉与掺铒氮化物荧光粉的质量比为1:2。It is basically the same as Example 2, except that the mass ratio of the cerium-doped yttrium aluminum garnet phosphor to the erbium-doped nitride phosphor is 1:2.
实施例5：Example 5:
与实施例2基本相同，不同之处在于：掺铈钇铝柘榴石荧光粉与掺铒氮化物荧光粉的质量比为2:1。It is basically the same as Example 2, except that the mass ratio of the cerium-doped yttrium aluminum garnet phosphor to the erbium-doped nitride phosphor is 2:1.
实施例6：Embodiment 6:
与实施例2基本相同，不同之处在于：荧光粉涂层厚度为70微米。It is basically the same as Example 2, except that the thickness of the phosphor powder coating is 70 microns.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610850131.8A CN106129230A (en) | 2016-09-26 | 2016-09-26 | A kind of LED chip producing amber light |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610850131.8A CN106129230A (en) | 2016-09-26 | 2016-09-26 | A kind of LED chip producing amber light |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106129230A true CN106129230A (en) | 2016-11-16 |
Family
ID=57271786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610850131.8A Pending CN106129230A (en) | 2016-09-26 | 2016-09-26 | A kind of LED chip producing amber light |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106129230A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101910926A (en) * | 2008-01-03 | 2010-12-08 | 皇家飞利浦电子股份有限公司 | Display device and illumination device |
| CN102911668A (en) * | 2012-10-15 | 2013-02-06 | 深圳市聚飞光电股份有限公司 | Mixed phosphor powder, phosphor glue, amber light emitting diode (LED) and car lamp |
| CN102980074A (en) * | 2012-12-19 | 2013-03-20 | 南京铁道职业技术学院 | LED mosquito repelling lamp and preparation method thereof |
| CN103545428A (en) * | 2012-07-13 | 2014-01-29 | 铼钻科技股份有限公司 | White light LED |
| CN103545417A (en) * | 2012-07-13 | 2014-01-29 | 铼钻科技股份有限公司 | White light LED |
| CN103579462A (en) * | 2013-11-12 | 2014-02-12 | 奇瑞汽车股份有限公司 | Light source of LED steering lamp of automobile |
| CN104087292A (en) * | 2014-07-09 | 2014-10-08 | 中国科学院长春应用化学研究所 | A kind of Mn4+ doped red luminescent material, preparation method and new lighting source |
| CN105824195A (en) * | 2015-01-23 | 2016-08-03 | 三星显示有限公司 | Photosensitive resin composition and display device |
-
2016
- 2016-09-26 CN CN201610850131.8A patent/CN106129230A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101910926A (en) * | 2008-01-03 | 2010-12-08 | 皇家飞利浦电子股份有限公司 | Display device and illumination device |
| CN103545428A (en) * | 2012-07-13 | 2014-01-29 | 铼钻科技股份有限公司 | White light LED |
| CN103545417A (en) * | 2012-07-13 | 2014-01-29 | 铼钻科技股份有限公司 | White light LED |
| CN102911668A (en) * | 2012-10-15 | 2013-02-06 | 深圳市聚飞光电股份有限公司 | Mixed phosphor powder, phosphor glue, amber light emitting diode (LED) and car lamp |
| CN102980074A (en) * | 2012-12-19 | 2013-03-20 | 南京铁道职业技术学院 | LED mosquito repelling lamp and preparation method thereof |
| CN103579462A (en) * | 2013-11-12 | 2014-02-12 | 奇瑞汽车股份有限公司 | Light source of LED steering lamp of automobile |
| CN104087292A (en) * | 2014-07-09 | 2014-10-08 | 中国科学院长春应用化学研究所 | A kind of Mn4+ doped red luminescent material, preparation method and new lighting source |
| CN105824195A (en) * | 2015-01-23 | 2016-08-03 | 三星显示有限公司 | Photosensitive resin composition and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108305929B (en) | White light-emitting device with high color rendering | |
| CN103222077B (en) | Light-emitting device | |
| JP4833212B2 (en) | A new phosphor system for white light emitting diodes | |
| KR100912204B1 (en) | White light illumination system with improved color output | |
| CN103339750B (en) | White light source | |
| CN102403438B (en) | Light emitting device | |
| JP2005264160A (en) | Phosphor, method for manufacturing the same, and light emitting device using the same | |
| TW200927886A (en) | Red line emitting complex fluoride phosphors activated with Mn4+ | |
| CN107431112B (en) | Light emitting device | |
| CN106104822A (en) | Light-emitting device | |
| CN101946336B (en) | White light emitting device and lighting fitting for vehicles using the white light emitting device | |
| KR101496718B1 (en) | Phosphor and light emitting device | |
| CN102142503A (en) | White light generation method and white light emitting diode device | |
| CN100385690C (en) | White light emitting method capable of adjusting color temperature | |
| CN107270139B (en) | Light emitting device and method for operating a light emitting device | |
| CN106129230A (en) | A kind of LED chip producing amber light | |
| TWI529976B (en) | Illuminating device | |
| TWI578578B (en) | Light-emitting device | |
| CN103855287B (en) | A kind of light-emitting device and the luminescent device with the light-emitting device | |
| TWI234294B (en) | White light-emitting device | |
| JP5805175B2 (en) | Light emitting diode light source | |
| TW200532934A (en) | White light- emitting diode unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161116 |