CN106129127B - A kind of positively biased BE junction transistors transfiguration circuit - Google Patents
A kind of positively biased BE junction transistors transfiguration circuit Download PDFInfo
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- CN106129127B CN106129127B CN201610444327.7A CN201610444327A CN106129127B CN 106129127 B CN106129127 B CN 106129127B CN 201610444327 A CN201610444327 A CN 201610444327A CN 106129127 B CN106129127 B CN 106129127B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
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- H10D1/64—Variable-capacitance diodes, e.g. varactors
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Abstract
本发明公开了一种正偏BE结晶体管变容电路，偏置电压正极接通直器，偏置电压正极负极接地；通直器，限流电阻，第一电容，限直器依次串联连接；晶体管的集电极和发射极接地，其基极连接在限流电阻与第一电容之间；第二电容一端接地，另一端连接在第一电容与限直器之间；限直器另一端接应用端口。本发明电路结构简单，成本低，具有大变容比、宽调谐的特性，有效解决了单个晶体管变容结构在微波低频段MMIC中难以实现宽调谐的难题。本发明的变容结构能用于多种晶体管，其偏置电压、变容范围、电容值及变容比可以在很大的范围内调整，有利于MMIC工艺的实现，具有很大的实际应用价值。
The invention discloses a varactor circuit of a forward-biased BE junction transistor. The positive pole of the bias voltage is connected to a directr, and the positive pole of the bias voltage is grounded; The collector and emitter of the transistor are grounded, and the base is connected between the current-limiting resistor and the first capacitor; one end of the second capacitor is grounded, and the other end is connected between the first capacitor and the DC limiter; the other end of the DC limiter is connected Application port. The invention has simple circuit structure, low cost, and has the characteristics of large variable capacitance ratio and wide tuning, and effectively solves the problem that a single transistor variable capacitance structure is difficult to achieve wide tuning in the microwave low frequency MMIC. The varactor structure of the present invention can be used for various transistors, and its bias voltage, varactor range, capacitance value and varactor ratio can be adjusted in a wide range, which is beneficial to the realization of the MMIC process and has great practical application value.
Description
Technical field
The invention belongs to microwave technologies, microwave circuit field, and in particular to a kind of novel positively biased BE junction transistors transfiguration
Circuit.
Background technique
Transfiguration circuit is widely applied to various electronics and microwave device, to realize electronic tuning to increase device
Bandwidth of operation.In microwave regime, transfiguration circuit can be applied to filter, amplifier, phase-shifter and oscillator etc., wherein vibrating
Device becomes most that there is an urgent need to the device of tuning and transfiguration electricity in practical application due to the intrinsic narrow frequency characteristic of its resonance circuit
The main application device in road.With the increasingly reinforcement that radio circuit miniaturization, low-power consumption require, with the day of modern communication technology
It opens up, using the voltage controlled oscillator (VCO) of monolithic integrated microwave circuit (MMIC) conceptual design and manufacture, becomes including military increasingly
The basic circuit core of all kinds of frequency sources including device.One broad tuning range, big output power, high efficiency, high integration
Voltage controlled oscillator almost determine the attainable peak performance of communication system institute.In past voltage-controlled oscillator (VCO), become
Capacitive circuit mostly uses greatly the varactor of reverse biased as voltage-controlled device.However, when realizing circuit with actual process, meeting
It was found that varactor usually will affect the performance of circuit.Then, people just attempt general to replace using other devices
Varactor, transistor transfiguration are just come into being.In the monolithic integrated microwave circuit (MMIC) of high integration, due in base
On piece makes a crystal diode (BJT) or field-effect tube (MOSFET) its cost is very low, therefore in voltage controlled oscillator MMIC
In, the BE for commonly using BJT ties to realize transfiguration function.The BE knot of transistor is equivalent to a PN junction, after additional reversed bias voltage,
Barrier capacitance increases with reversed bias voltage and is reduced.However use BE knot as varactor its capacitance is smaller, single varactor exists
Microwave low-frequency range is generally difficult to realize broad tuning, so people usually form array using multiple varactors to realize in VCO
Broad tuning, its structure is complicated, and there are certain difficulties for design and production.
Summary of the invention
The purpose of the present invention is to solve transistor transfiguration value is smaller, it is generally difficult to realize broad tuning in microwave low-frequency range
Limitation, and propose a kind of method for effectively realizing broad tuning.
The technical solution adopted by the invention is as follows:
1. a kind of positively biased BE junction transistors transfiguration circuit, which is characterized in that including bias voltage port, lead to straight device, current limliting
Resistance, first capacitor, transistor, the second capacitor, the straight device of limit and application port；Bias voltage anode connects straight device, bias voltage
Cathode ground connection；Lead to straight device, current-limiting resistance, first capacitor limits straight device and is sequentially connected in series；The collector and emitter of transistor connects
Ground, base stage are connected between current-limiting resistance and first capacitor；Second capacitor one end ground connection, the other end be connected to first capacitor with
It limits between straight device；It limits the straight device other end and connects application port.
Further, described to lead to straight device for a perceptual structure, play a part of that high frequency is inhibited to pass through.
The size of the current-limiting resistance limitation electric current does not cause the BE junction breakdown of transistor, is not up to BE knot in tuning voltage
When conducting voltage, current-limiting resistance does not work, and tuning voltage is all attached on transistor, and leads when tuning voltage is greater than BE knot
Voltage control is converted to current control by current-limiting resistance when the pressure that is powered, and generates controlled port by the electric current that BE knot is flowed through in control
Capacitor.
It is described to have codetermined the maximum capacitor value that transfiguration circuit may be implemented with concatenated two fixed capacities of transistor,
Transistor transfiguration is helped to realize suitable transfiguration range.In addition, earth capacitor also has the important work for reducing port resistive
With can realize and shunt to the AC signal that is inputted from application end, the real part of the port Z parameter can be reduced.
The collector and emitter of the transistor is grounded.
The straight device of limit is a capacitive structures, and it acts as prevent direct current from passing through.
Control voltage on the left of the circuit structure is tied through the BE of resistance current limliting conducting transistor, brings it about forward bias
It sets.Using its positive capacity effect when BE knot conducting, the imaginary part of port Impedance is generated, series capacitance is for transfiguration value to be limited in
Reasonable range.Since there are also no small purely resistive for port when BE solves forward conduction, shunt capacitance, electric by this Single port again
It is resistive to be preferably minimized.
The high frequency model of the transistor, the capacitor between emitter-base bandgap grading and base stage be biased it is voltage-controlled.
The circuit structure applies the diffusion capacitance of PN junction, because when PN junction forward bias, the size of barrier capacitance
Can almost it ignore, the stool and urine of diffusion capacitance determines the size of port capacitor.
The theory of the transistor forward conduction transfiguration is as follows:
Transfiguration characteristic when analyzing crystal pipe BE pole forward conduction is equal to the positive capacitance characteristic of analysis PN junction.By half
The basic theories of conductor physics is it is found that when forward biased, the area N is injected in the majority carrier hole in the area P, then barrier region and N
Area side boundary is changed into nonequilibrium hole and electron accumulation by original balance barrier region, similarly, also has electricity in the area P side
Son and hole accumulation.At this point, being increased by the hole that the area P is injected into the area N if forward bias increases, injecting one, the hole in the area N
Divide and neutralized by diffusion, another part then stays the accumulation for increasing the area N hole.Forward bias further increases, the area N diffusion region
The non-equilibrium hole of interior accumulation also further increases, and keeps the electronics of electroneutral also to increase simultaneously with it.Similarly, the area P diffusion region
The nonequilibrium electron of interior accumulation, and to keep the hole of electroneutral also to increase simultaneously.This amount of charge due to diffusion region with
Applied voltage changes generated capacity effect, the referred to as diffusion capacitance of PN junction[18].The size of PN junction diffusion capacitance can be by PN
Differential capacitance definition under knot Dc bias is found out, and is defined as follows formula
By experiment test it is found that the minority carrier accumulated in diffusion region is according to exponential distribution.Therefore it is injected into the area N
There can be following two formula to provide with the distribution of the non-equilibrium minority carrier in the area P in PN junction
P in above formulanIt (x) is the hole concentration in the area x Dian Chu N, pn0The concentration in minority carrier hole, x are balanced for the area NnFor N
Sector width, LpFor hole-diffusion length；Similarly, npIt (x) is the electron concentration in the area x Dian Chu P, np0Minority carrier is balanced for the area P
The concentration of electronics, xpFor P sector width, LnFor electron diffusion length；Q is the quantity of electric charge, and U is PN junction forward voltage, k0For Boltzmann
Constant, T are kelvin degree.Upper two formula is integrated in diffusion region to get the current-carrying accumulated in the diffusion region to unit area
Sub- total charge dosage
As a result, according to the definition of PN junction differential capacitance, the differential capacitance that can calculate diffusion region unit area is
Enabling PN junction area is A, then total differential diffusion capacitance of PN junction is
Above formula shows the relationship between diffusion capacitance and forward voltage, and the transistor forward biased transfiguration relationship ten that test obtains
Classification is seemingly.Therefore, the forward conduction transistor varactor structure that this patent proposes not only had had practicability but also had physically had conjunction
Rationality.
The utility model has the advantages that
The present invention, which compares prior art, has following innovative point:
1. proposing a kind of using the solid existing big variable compression ratio of transistor forward biased BE, the varactor structure of broad tuning.
2. deriving and confirming that positively biased BE ties the relationship between its diffusion capacitance and positive bias-voltage, make the transfiguration of aforementioned proposition
Structure has theoretical foundation.
The present invention, which compares prior art, has following remarkable advantage:
1. solving the problems, such as that single transistor capacity-variable structure is difficult to realize broad tuning in microwave low-frequency range MMIC.
2. capacity-variable structure of the invention can be used for a variety of transistors, bias voltage, transfiguration range, capacitance and variable compression ratio
It can adjust within a large range, there is very big practical application value
3. structure is simple, at low cost.
4. being conducive to the realization of MMIC technique.
Detailed description of the invention
Fig. 1 is positively biased BE junction transistors transfiguration electrical block diagram；
Fig. 2 is 1 bias voltage of embodiment and capacitance variations relational graph；
Fig. 3 is 2 bias voltage of embodiment and capacitance variations relational graph；
Fig. 4 is 3 bias voltage of embodiment and capacitance variations relational graph；
Fig. 5 is PN junction built-in potential and size relationship.
Specific embodiment
The invention will be further described with specific embodiment with reference to the accompanying drawing:
Embodiment 1
The present embodiment is illustrated by taking positively biased BE junction transistors transfiguration circuit as an example
As shown in Figure 1, this example positively biased BE junction transistors transfiguration circuit, including bias voltage port 1, lead to straight device 2, current limliting electricity
Resistance 3, first capacitor 4, transistor 5, the second capacitor 6, the straight device 7 of limit and application port 8.This example transistor 5 uses BJT transistor,
Lead to the perceptual structure that straight device 2 is a big inductance value, limits the capacitive structures that straight device 7 is a large capacitance.This example bias voltage anode
Connect straight device 2, cathode ground connection.Lead to straight device 2, current-limiting resistance 3, first capacitor 4, limiting straight device 7 is to be sequentially connected in series.First capacitor
4 connect with 5 base stage of transistor and the second capacitor 6, and the collector and emitter ground connection of transistor 5 limits straight 7 other end of device and scoops out use
Port 8.In this example, leads to straight device 2 and only serve high frequency choke effect, other influences of circuit can be ignored, series connection with it
Current-limiting resistance 3 is extremely important, by limitation electric current size do not cause transistor 5 BE tie it is breakdown, bias voltage not
When reaching BE knot conducting voltage, current-limiting resistance 3 does not almost work, and tuning voltage almost all is attached on transistor 5, and is worked as
Voltage control is converted to current control by current-limiting resistance 3 when tuning voltage is greater than BE knot conducting voltage, flows through BE knot by control
Electric current generate controlled port capacitor.First capacitor 4 and the second capacitor 6 have codetermined the maximum that transfiguration circuit may be implemented
Capacitance helps transistor transfiguration to realize suitable transfiguration range.In addition, the second capacitor 6 also has the weight for reducing port resistive
It acts on, the AC signal inputted from application port 8 can be realized and be shunted, reduce the reality of the Z parameter looked over from the port
Portion.Test results are shown in figure 2, and when frequency is 2GHz, when bias voltage changes to 2V from 0V, the variation range of port capacitor is
0.1pF to 12pF, the result ratio using reverse-biased BE junction transistors realize varactor in terms of transfiguration range and capacitance have compared with
Big advantage.
Embodiment 2
As shown in Figure 1, this example transistor is HBT transistor, other structures are same as Example 1, and details are not described herein again.
Fig. 3 is this example bias voltage and capacitance variations relational graph, it may be seen that when frequency is 2GHz, bias voltage is from 0V
When changing to 10V, the variation range of port capacitor is 0.19pF to 7.1pF.
Embodiment 3
As shown in Figure 1, this example transistor is HBT transistor, short-circuit first capacitor 4, other structures are same as Example 1,
Details are not described herein again.
Fig. 4 is this example bias voltage and capacitance variations relational graph, it may be seen that when frequency is 2GHz, bias voltage is from 0V
When changing to 10V, the variation range of port capacitor is 0.11pF to 360pF.
Can be seen that capacity-variable structure of the invention from theory deduction and above embodiments can be used for a variety of transistors, partially
Setting voltage, transfiguration range, capacitance and variable compression ratio can adjust within a large range, have very big practical application value.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (3)
1. a kind of positively biased BE junction transistors transfiguration circuit, which is characterized in that including bias voltage port, lead to straight device, current-limiting resistance,
First capacitor, transistor, the second capacitor, the straight device of limit and application port；Bias voltage anode connects straight device, and bias voltage cathode connects
Ground；Lead to straight device, current-limiting resistance, first capacitor limits straight device and is sequentially connected in series；The collector and emitter of transistor is grounded,
Base stage is connected between current-limiting resistance and first capacitor；Second capacitor one end ground connection, the other end is connected to first capacitor and limit is straight
Between device；It limits the straight device other end and connects application port.
2. the positively biased BE junction transistors transfiguration circuit according to claim 1, which is characterized in that the bias voltage leads to straight
Device, current-limiting resistance constitute a positively biased BE junction structure.
3. positively biased BE junction transistors transfiguration circuit according to claim 1, which is characterized in that the first capacitor and
Two capacitors constitute a series arm, and the change of capacitance can help transistor transfiguration to realize suitable transfiguration range.
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| CN106685360A (en) * | 2017-01-04 | 2017-05-17 | 西南交通大学 | A Broadband Microwave Voltage Controlled Oscillator |
| CN108365823B (en) * | 2018-03-21 | 2021-12-03 | 电子科技大学 | Voltage-controlled varactor circuit of big varactor ratio based on field effect transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2899385Y (en) * | 2005-09-05 | 2007-05-09 | 飞利浦(中国)投资有限公司 | Electronic ballast with complementing butt-piped circuit structure |
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| DE102004017788B4 (en) * | 2004-04-02 | 2008-01-03 | Atmel Germany Gmbh | Oscillator with tunable diffusion capacity as resonant circuit capacitance |
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| CN2899385Y (en) * | 2005-09-05 | 2007-05-09 | 飞利浦(中国)投资有限公司 | Electronic ballast with complementing butt-piped circuit structure |
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| 0.14THz倍频器的设计与仿真;缪丽等;《信息与电子工程》;20121231;第10卷(第6期);第690-693页 |
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