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CN106125432A - 显示器及其显示面板 - Google Patents

显示器及其显示面板 Download PDF

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Publication number
CN106125432A
CN106125432A CN201610754877.9A CN201610754877A CN106125432A CN 106125432 A CN106125432 A CN 106125432A CN 201610754877 A CN201610754877 A CN 201610754877A CN 106125432 A CN106125432 A CN 106125432A
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layer
display floater
semiconductor layer
substrate
metal level
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马亮
赵莽
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to CN201610754877.9A priority Critical patent/CN106125432A/zh
Publication of CN106125432A publication Critical patent/CN106125432A/zh
Priority to US15/326,551 priority patent/US10216058B2/en
Priority to PCT/CN2017/070518 priority patent/WO2018040468A1/zh
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
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    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

本发明公开了一种显示面板，该显示面板至少包括第一基板、第二基板、夹持在第一基板和第二基板之间的液晶层、设置在第一基板上的遮光层、设置在遮光层和第一基板上的缓冲层、设置在缓冲层上的第一半导体层以及设置在第一半导体层和缓冲层上的有源层。本发明还公开了一种显示器。通过上述方式，本发明能够降低薄膜晶体管的漏电流，能够降低液晶面板的串扰和闪烁。

Description

显示器及其显示面板
技术领域
本发明涉及显示技术领域，特别是涉及一种显示器及其显示面板。
背景技术
液晶面板由于其轻薄化和低功耗等优点，是目前市场中的主流显示装置，目前手机屏幕往往采用FFS(Fringe Field Switching，边缘场开关)这种显示模式，因其有较宽的视角和不易受液晶盒厚轻微变化的影响；
在液晶面板中，TFT(Thin Film Transistor，薄膜晶体管)器件通常存在漏电问题，这就需要较大的储存电容Cst，以防止在一帧的时间TFT漏电引起像素灰阶变化，像素灰阶变化会引起液晶面板光学品质下降。如串扰和闪烁等现象，而较大储存电容又易受到分辨率和开口率影响。
因此，需要提供显示器及其显示面板，以解决上述技术问题。
发明内容
本发明主要解决的技术问题是提供一种显示器及其液晶面板，能够降低液晶面板的串扰和闪烁。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种显示面板，该显示面板至少包括第一基板、第二基板、夹持在第一基板和第二基板之间的液晶层、设置在第一基板上的遮光层、设置在遮光层和第一基板上的缓冲层、设置在缓冲层上的第一半导体层以及设置在第一半导体层和缓冲层上的有源层。
其中，有源层包括本征部、分别位于本征部两侧的第一轻掺杂部和第二轻掺杂部、位于第一轻掺杂部远离本征部一侧的第一重掺杂部、位于第二轻掺杂部远离本征部一侧的第二重掺杂部，本征部完全覆盖第一半导体层。
其中，显示面板进一步包括设置在缓冲层上的第二半导体层、设置在有源层和第二半导体层和缓冲层上的栅极绝缘层、设置在栅极绝缘层上的第一金属层、设置在第一金属层上的层间介质层、设置在层间介质层上的第二金属层、设置在第二金属层和层间介质层上的平坦化层、设置在平坦化层上的公共电极层、设置在平坦化层和公共电极层上的钝化层以及设置在钝化层上的透明电极层，第二金属层通过设置在层间介质层和栅极绝缘层上的过孔与有源层导通，透明电极层通过设置在钝化层和平坦化层上的过孔与第二金属层导通，公共电极层设置在与第二半导体层上下对应的区域，透明电极层设置在与公共电极层对应的区域，有源层还设置在第二半导体层上。
其中，有源层包括本征部、分别位于本征部两侧的第一轻掺杂部和第二轻掺杂部、位于第一轻掺杂部远离本征部一侧的第一重掺杂部、位于第二轻掺杂部远离本征部一侧的第二重掺杂部，第二重掺杂部至少部分设置在第二半导体层上。
其中，第二金属层包括第一子金属层和第二子金属层，第一子金属层通过设置在层间介质层和栅极绝缘层上的过孔与第一重掺杂部导通，第二子金属层通过设置在层间介质层和栅极绝缘层上的过孔与第二重掺杂部导通，透明电极层通过设置在钝化层和平坦化层上的过孔与第二子金属层导通。
其中，第一半导体层和第二半导体层为N型半导体层。
其中，第一半导体层和第二半导体层的材料为铟镓锌氧化物。
其中，显示面板进一步包括设置在第二基板上的彩色滤光片。
其中，有源层为多晶硅半导体层，显示面板为边缘场开关显示面板。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种显示器，显示器包括显示面板和用于为显示面板提供背光的背光模组，显示面板为上述的显示面板。
本发明的有益效果是：区别于现有技术的情况，本发明通过设置显示面板至少包括第一基板、第二基板、夹持在第一基板和第二基板之间的液晶层、设置在第一基板上的遮光层、设置在遮光层和第一基板上的缓冲层、设置在缓冲层上的第一半导体层以及设置在第一半导体层和缓冲层上的有源层，在栅极驱动信号无偏压的情况下，由第一半导体与有源层形成PN结，在PN结处形成一个很薄的空间电荷区；在栅极驱动信号为负偏压的情况下，由于外加的电场方向与PN结的内电场方向一致，增大了空间电荷区，降低了电子偏移的通道，从而能降低薄膜晶体管的漏电流，能够降低液晶面板的串扰和闪烁。
附图说明
图1是本发明优选实施例的显示面板的结构示意图；
图2是本发明显示面板在栅极驱动信号为无偏压的情况下的空间电荷区分布示意图；
图3是本发明显示面板在栅极驱动信号为负偏压的情况下的空间电荷区分布示意图；
图4是本发明显示器的结构示意图。
具体实施方式
下面结合附图和实施例对本发明进行详细的说明。
请参阅图1，图1是本发明优选实施例的显示面板的结构示意图。在本实施例中，显示面板包括第一基板11、第二基板12、夹持在第一基板11和第二基板12之间的液晶层13、设置在第一基板11上的遮光层14、设置在遮光层14和第一基板11上的缓冲层15、设置在缓冲层15上的第一半导体层16以及设置在第一半导体层16和缓冲层15上的有源层17。
由于在设置有源层17之前在其下方先形成了一层第一半导体层16，在栅极驱动信号为无偏压的情况下，由第一半导体与有源层17形成PN结，在PN结处形成一个很薄的空间电荷区；在栅极驱动信号为负偏压的情况下，由于外加的电场方向与PN结的内电场方向一致，增大了空间电荷区，降低了电子偏移的通道，从而能降低薄膜晶体管的漏电流，能够降低液晶面板的串扰和闪烁。
优选地，有源层17包括本征部171、分别位于本征部171两侧的第一轻掺杂部172和第二轻掺杂部173、位于第一轻掺杂部171远离本征部171一侧的第一重掺杂部174、位于第二轻掺杂部173远离本征部171一侧的第二重掺杂部175，本征部171完全覆盖第一半导体层16。
如图1所示，本征部171完全将第一半导体层16覆盖使得，第一半导体层16完全不与第一轻掺杂部172、第二轻掺杂部173、第一重掺杂部174或者第二重掺杂部175接触，保证漏极和源极不会在栅极驱动信号为无偏压下的情况下直接导通。
优选地，有源层17为多晶硅半导体层17。在其他实施例中，有源层17也可以为其他类型的有源层。
优选地，显示面板进一步包括设置在缓冲层15上的第二半导体层18、设置在有源层17和第二半导体层18和缓冲层15上的栅极绝缘层19、设置在栅极绝缘层19上的第一金属层20、设置在第一金属层20上的层间介质层21、设置在层间介质层21上的第二金属层22、设置在第二金属层22和层间介质层21上的平坦化层23、设置在平坦化层23上的公共电极层24、设置在平坦化层23和公共电极层24上的钝化层25以及设置在钝化层25上的透明电极层26，第二金属层22通过设置在层间介质层21和栅极绝缘层19上的过孔与有源层17导通，透明电极层26通过设置在钝化层25和平坦化层23上的过孔与第二金属层22导通，公共电极层24设置在与第二半导体层18上下对应的区域，透明电极层26设置在与公共电极层24对应的区域，有源层17还设置在第二半导体层18上。优选地，公共电极层24在第二半导体层18上的投影与第二半导体层18完全重叠，更利于二者之间存储电容的形成，在其他实施例中，公共电极层24在第二半导体层18上的投影与第二半导体层18也可以是部分重叠。
请参阅图2，图2是本发明显示面板在栅极驱动信号为无偏压的情况下的空间电荷区分布示意图。在栅极驱动信号无偏压的情况下，由第一半导体16与有源层17的本征部171形成PN结，在本征部171上与第一半导体层16交界处形成一个很薄的空间电荷区s。
请参阅图3，图3是本发明显示面板在栅极驱动信号为负偏压的情况下的空间电荷区分布示意图。在栅极驱动信号为负偏压的情况下，由于外加的电场方向与PN结的内电场方向一致，增大了空间电荷区s形成新的更大的空间电荷区t，降低了电子偏移的通道p(电子偏移通道p变窄)，从而能降低薄膜晶体管的漏电流，能够降低液晶面板的串扰和闪烁。
本领域技术人员不难理解，栅极驱动信号为施加在第一金属层20上的电压信号。第一金属层20为栅极层。
优选地，第二重掺杂部175至少部分设置在第二半导体层18上。
进一步地，由于第二半导体层18的设置，且第二半导体层18通过第二重掺杂部175与第二子金属层222导通，又由于第二半导体层18设置在与公共电极层24上下对应的区域，因此在第二半导体层18和公共电极层24之间形成存储电容Cst2，最终总的存储电容大小为Cst2加上透明电极层26与公共电极层24之间的存储电容Cst1，相比传统的显示面板增大了存储电容，可以更进一步的降低闪烁和串扰。
优选地，第二金属层22包括第一子金属层221和第二子金属层222，第一子金属层221通过设置在层间介质层21和栅极绝缘层19上的过孔与第一重掺杂部174导通，第二子金属层222通过设置在层间介质层21和栅极绝缘层19上的过孔与第二重掺杂部175导通，透明电极层26通过设置在钝化层25和平坦化层23上的过孔与第二子金属层222导通。
优选地，第一子金属层221为源极层，第二子金属层222为漏极层，可以理解，在其他实施例中，也可以是第一子金属层221为漏极层，第二子金属层222为源极层。
优选地，第一半导体层16和第二半导体层18为N型半导体层。
更为优选地，第一半导体层16和第二半导体层18的材料为铟镓锌氧化物，即IGZO(indium gallium zinc oxide)。由于铟镓锌氧化物的透明特性，增加的第一半导体层16和第二半导体层18不会对显示面板的开口率造成影响，且不会影响正常的显示。
优选地，显示面板进一步包括设置在第二基板12上的彩色滤光片27。本领域技术人员可以理解，显示面板还可以包括支撑在第一基板11和第二基板12之间的支撑柱或者在第一基板11或者第二基板12上还可以包括其他膜层，例如偏光片等。
优选地，本实施例中的显示面板为边缘场开关显示面板，在其他实施例中，显示面板也可以为其他类型的显示面板。
请参阅图4，图4是本发明显示器的结构示意图。在本实施例中，显示器包括显示面板41和用于为显示面板41提供背光的背光模组42，该显示面板41为上述任意一个实施例所述的显示面板。
本发明通过设置显示面板至少包括第一基板、第二基板、夹持在第一基板和第二基板之间的液晶层、设置在第一基板上的遮光层、设置在遮光层和第一基板上的缓冲层、设置在缓冲层上的第一半导体层以及设置在第一半导体层和缓冲层上的有源层，在栅极驱动信号无偏压的情况下，由第一半导体与有源层形成PN结，在PN结处形成一个很薄的空间电荷区；在栅极驱动信号为负偏压的情况下，由于外加的电场方向与PN结的内电场方向一致，增大了空间电荷区，降低了电子偏移的通道，从而能降低薄膜晶体管的漏电流，能够降低液晶面板的串扰和闪烁。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

1.一种显示面板，其特征在于，所述显示面板至少包括第一基板、第二基板、夹持在所述第一基板和所述第二基板之间的液晶层、设置在第一基板上的遮光层、设置在所述遮光层和所述第一基板上的缓冲层、设置在所述缓冲层上的第一半导体层以及设置在所述第一半导体层和所述缓冲层上的有源层。
2.根据权利要求1所述的显示面板，其特征在于，所述有源层包括本征部、分别位于所述本征部两侧的第一轻掺杂部和第二轻掺杂部、位于所述第一轻掺杂部远离所述本征部一侧的第一重掺杂部、位于所述第二轻掺杂部远离所述本征部一侧的第二重掺杂部，所述本征部完全覆盖所述第一半导体层。
3.根据权利要求1所述的显示面板，其特征在于，所述显示面板进一步包括设置在所述缓冲层上的第二半导体层、设置在所述有源层和所述第二半导体层和所述缓冲层上的栅极绝缘层、设置在所述栅极绝缘层上的第一金属层、设置在所述第一金属层上的层间介质层、设置在所述层间介质层上的第二金属层、设置在所述第二金属层和所述层间介质层上的平坦化层、设置在所述平坦化层上的公共电极层、设置在所述平坦化层和所述公共电极层上的钝化层以及设置在所述钝化层上的透明电极层，所述第二金属层通过设置在所述层间介质层和所述栅极绝缘层上的过孔与所述有源层导通，所述透明电极层通过设置在所述钝化层和所述平坦化层上的过孔与所述第二金属层导通，所述公共电极层设置在与所述第二半导体层上下对应的区域，所述透明电极层设置在与所述公共电极层对应的区域，所述有源层还设置在所述第二半导体层上。
4.根据权利要求3所述的显示面板，其特征在于，所述有源层包括本征部、分别位于所述本征部两侧的第一轻掺杂部和第二轻掺杂部、位于所述第一轻掺杂部远离所述本征部一侧的第一重掺杂部、位于所述第二轻掺杂部远离所述本征部一侧的第二重掺杂部，所述第二重掺杂部至少部分设置在所述第二半导体层上。
5.根据权利要求4所述的显示面板，其特征在于，所述第二金属层包括第一子金属层和第二子金属层，所述第一子金属层通过设置在所述层间介质层和所述栅极绝缘层上的过孔与所述第一重掺杂部导通，所述第二子金属层通过设置在所述层间介质层和所述栅极绝缘层上的过孔与所述第二重掺杂部导通，所述透明电极层通过设置在所述钝化层和所述平坦化层上的过孔与所述第二子金属层导通。
6.根据权利要求3所述的显示面板，其特征在于，所述第一半导体层和第二半导体层为N型半导体层。
7.根据权利要求6所述的显示面板，其特征在于，所述第一半导体层和第二半导体层的材料为铟镓锌氧化物。
8.根据权利要求1所述的显示面板，其特征在于，所述显示面板进一步包括设置在所述第二基板上的彩色滤光片。
9.根据权利要求1所述的显示面板，其特征在于，所述有源层为多晶硅半导体层，所述显示面板为边缘场开关显示面板。
10.一种显示器，其特征在于，所述显示器包括显示面板和用于为所述显示面板提供背光的背光模组，所述显示面板为如权利要求1-9任意一项所述的显示面板。
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