CN106092234A - Hollow out heat membrane type flow sensor with rectifier structure and preparation method thereof - Google Patents
Hollow out heat membrane type flow sensor with rectifier structure and preparation method thereof Download PDFInfo
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- CN106092234A CN106092234A CN201610383122.2A CN201610383122A CN106092234A CN 106092234 A CN106092234 A CN 106092234A CN 201610383122 A CN201610383122 A CN 201610383122A CN 106092234 A CN106092234 A CN 106092234A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/76—Devices for measuring mass flow of a fluid or a fluent solid material
- G01F1/86—Indirect mass flowmeters, e.g. measuring volume flow and density, temperature or pressure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
- B81B1/002—Holes characterised by their shape, in either longitudinal or sectional plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
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Abstract
The present invention relates to a kind of hollow out heat membrane type flow sensor with rectifier structure and preparation method thereof.Hollow out heat membrane type flow sensor with rectifier structure, it includes silicon substrate, is positioned at this silicon substrate front and has and add thermal resistance and the membrane structure of multiple temperature element, silicon substrate has insulating chamber, the part above this insulating chamber that is positioned at of membrane structure is defined as hotting mask, and membrane structure has and lays respectively at hotting mask upstream side and downstream and for being advection state by the fluid flowed through rectification and increasing by two rectifier structures that membrane structure and fluid contact level are long-pending.Design with rectifier structure, on the one hand can treat that fluid measured rectification is advection state by flow through hotting mask, thus improve its detection accuracy, on the other hand increase the contact area treating fluid measured with hotting mask, therefore improve heat exchange efficiency, so that detectivity is improved.
Description
Technical field
The present invention relates to a kind of hollow out heat membrane type flow sensor with rectifier structure based on MEMS technology and system thereof
Make method, belong to micro processing field.
Background technology
Flow measurement suffers from the widest in fields such as the energy, biology, automobile, Aero-Space, scientific research, industrial stokehold
General application, energy monitoring as conventional in water, natural gas, steam and the oil product etc. of energy field, blood in biotechnology, urine
Deng monitoring；The fields such as the air inflow monitoring of automobile engine, all use the effusion meter that quantity is the hugest, and they are can source capsule
Reason, efficiently utilization, the indispensable instrument of business accounting.Also it is efficiently to utilize the energy, it is achieved energy-saving and cost-reducing, reduces environment dirty
Dye, improves production quality, and increases economic efficiency and the important tool of management level, occupies an important position in national economy.
The effusion meter of different application, its operation principle is the most different, and main operational principle has mechanics principle, calorifics principle, Principles of Acoustics, light
Learn principle etc..
Thermal flowmeter is a kind of new flowmeter grown up on the basis of hot wire anemometer in early days, based on calorifics
Principle, i.e. the theory of " thermal discharge of gas is directly proportional to the mass flow of this gas to caloric receptivity " that Thomas proposes carries out work
Make, because of advantages such as it have certainty of measurement height, and response is fast, be widely used to Aeronautics and Astronautics, the energy, medical science, automobile at present
The industries such as industry and Natural Gas Pipeline Transportation.Thermal flowmeter can be divided into hot wire type effusion meter and hot diaphragm type effusion meter, and it is main
Want the persevering thermal type of working method and constant current mode, controlled by different signals and process circuit realiration.
Hot wire type effusion meter is generally by the thermosensitive wire (hot line) of perception air mass flow and the temperature that is modified intake air temperature
Degree compensates thermosensitive wire (cold line) and constitutes, and utilizes the heat transfer between hot line and air to carry out mass flow measurement.Hot wire type flow
Haggle over conventional flow meters, can directly record the mass flow of inlet air, it is not necessary to the parts such as pressure compensation, there is intake resistance
Little, response characteristic good, certainty of measurement high.But generally thermosensitive wire exposes in atmosphere, after so making to use for a long time
Thermosensitive wire, by particle contamination in air, causes certainty of measurement to decline, and on the other hand when flow at high speed, the grains of sand in air are easy
Strike off heated filament, cause sensor failure；Additionally, hot line concordance is poor so that produce in batches more difficult.Hot diaphragm type flow sensing
Device uses MEMS technology to make, good product consistency, it is easy to batch production, low cost, is difficult to pollute.Its operation principle is, quilt
Fluid measured flows through hotting mask, and hotting mask generation heat exchange, thus causes the temperature of local on hotting mask to change, by being produced on heat
Critesistor on film detects this temperature variation, thus has tested out the mass flow treating fluid measured.Treat fluid measured and hotting mask
Heat exchanger effectiveness the highest, detectivity is the highest.The fluid of equal in quality flow, the surface area participating in heat exchange is the biggest, and it changes
Heat is the most.
Summary of the invention
In order to solve the problems of the prior art, it is an object of the invention to provide a kind of hollow out heat with rectifier structure
Membrane type flow transducer and preparation method thereof.
In order to achieve the above object, the invention provides a kind of hollow out heat membrane type flow sensor with rectifier structure,
It includes silicon substrate, is positioned at this silicon substrate front and has and add thermal resistance and the membrane structure of multiple temperature element, and silicon substrate has
Having insulating chamber, the part above this insulating chamber that is positioned at of membrane structure is defined as hotting mask, and membrane structure has position respectively
In hotting mask upstream side and downstream and for being advection state by the fluid rectification flowed through and increasing membrane structure and contact with fluid
Two rectifier structures of area.
Further, rectification part includes that multiple boss and multiple groove, boss and groove are intervally installed, boss and recessed
The length direction of groove flows to arrange each along fluid.
Further, membrane structure includes ground floor dielectric film, includes adding thermal resistance and the temperature-sensitive of multiple temperature element
Layer, second layer dielectric film, for above-mentioned thermal resistance and multiple temperature element and the external signal of adding is controlled and process circuit phase
The signal lead of connection, passivation layer.
Further, rectifier structure includes that multiple boss and multiple groove, boss and groove are intervally installed, each
Boss is protruding by temperature-sensitive strip, second layer dielectric film be positioned at the part above temperature-sensitive strip projection, passivation layer be positioned at heat
Part above quick strip projection constitutes, and each groove is by adjacent two the temperature-sensitive strip projections that are positioned at of second layer dielectric film
Between part, the part between adjacent two temperature-sensitive strip projections of passivation layer constitute, the length side that temperature-sensitive strip is protruding
Flow to arrange to along fluid.
Further, heat-sensitive layer also includes that temperature-sensitive strip is protruding.
Further, multiple temperature elements include the edge being arranged on membrane structure and are flowed into hotting mask upstream for detection
At least one first temperature element of the initial temperature of body, it is distributed in and adds the both sides of thermal resistance and flow through for detecting fluid respectively
Add at least two second temperature element of temperature before and after thermal resistance.
Further, add thermal resistance and the second temperature element is positioned at the top of insulating chamber.
Further, multiple temperature elements also include being arranged on add between thermal resistance and the second temperature element for reality
Time detection hotting mask temperature at least one the 3rd temperature element.
Further, the length direction adding thermal resistance and multiple temperature element is each perpendicular to fluid flow direction setting.
Present invention also offers another kind of technical scheme: a kind of above-mentioned hollow out hot diaphragm type flow with rectifier structure passes
The manufacture method of sensor, comprises the following steps:
A. the front and back at silicon substrate grows ground floor dielectric film respectively；
B. on the ground floor dielectric film be positioned at front, grow heat-sensitive layer thin film, and graphically formation adds thermal resistance, multiple survey
Temperature element and multiple temperature-sensitive strip are protruding, and the length direction of temperature-sensitive strip projection flows to arrange along fluid；
C. growth regulation two layer medium thin film, and graphically, add in correspondence and at thermal resistance and temperature element, form multiple lead-in wire respectively
Hole；
D. growth trace layer thin film, and graphically, form multiple signal lead, each signal lead one end is by fairlead even
Connect and add thermal resistance or a temperature element；
E. growth of passivation layer, and graphically, at the other end of corresponding each signal lead, form perforate make signal lead from this
Perforate is exposed；
F. the silicon substrate back side is corroded to hotting mask and expose, and form insulating chamber.
Owing to have employed technique scheme, the present invention is with the hollow out heat membrane type flow sensor of rectifier structure and system thereof
Make method, have the advantage that
On the one hand 1., with the design of rectifier structure, can treat that fluid measured rectification is advection state by flow through hotting mask, thus improve
Its detection accuracy, on the other hand increases the contact area treating fluid measured with hotting mask, therefore improves heat exchange efficiency, so that
Detectivity is improved；
2. mass flow sensor uses Micrometer-Nanometer Processing Technology to be processed, and therefore its overall volume is little, it is easy to metaplasia in batches
Produce, low cost.
Accompanying drawing explanation
Accompanying drawing 1 is the perspective view of hollow out heat membrane type flow sensor in the present embodiment；
Accompanying drawing 2 is the AA ' cross-sectional view in accompanying drawing 1；
Accompanying drawing 3 is the BB ' cross-sectional view in accompanying drawing 1；
Accompanying drawing 4 is the CC ' cross-sectional view in accompanying drawing 1；
Accompanying drawing 5 is the knot of step a of the manufacture method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structure schematic diagram；
Accompanying drawing 6 is the knot of step b of the manufacture method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structure schematic diagram；
Accompanying drawing 7 be the manufacture method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure step b in whole
The structural representation in stream portion；
Accompanying drawing 8 is the knot of step c of the manufacture method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structure schematic diagram；
Accompanying drawing 9 be the manufacture method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure step c in whole
The structural representation in stream portion；
Accompanying drawing 10 is the knot of step d of the manufacture method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structure schematic diagram；
Accompanying drawing 11 is the knot of step e of the manufacture method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structure schematic diagram；
Accompanying drawing 12 be the manufacture method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure step e in whole
The structural representation in stream portion；
Accompanying drawing 13 is the knot of step f of the manufacture method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structure schematic diagram.
Figure is numbered:
1, silicon substrate；11, insulating chamber；2, rectifier structure；21, boss；22, groove；3, ground floor dielectric film；40, heating
Resistance；41, the first temperature element；42, the second temperature element；43, the 3rd temperature element；44, temperature-sensitive strip is protruding；5, the second layer
Dielectric film；51, fairlead；6, signal lead；7, passivation layer；71, perforate.
Detailed description of the invention
Below in conjunction with the accompanying drawings presently preferred embodiments of the present invention is described in detail, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art.
See accompanying drawing 1 to accompanying drawing 4, the hollow out heat membrane type flow sensor with rectifier structure in the present embodiment, its bag
Including silicon substrate 1, be positioned at this silicon substrate 1 front and have and add thermal resistance 40 and the membrane structure of multiple temperature element, silicon substrate 1 has
Having insulating chamber 11, the part above this insulating chamber 11 that is positioned at of membrane structure is defined as hotting mask, and membrane structure has point
Not being positioned at two rectifier structures 2 in hotting mask upstream side and downstream, this rectifier structure 2 is used for the fluid rectification flowed through being advection
State, and it is long-pending with fluid contact level to be used for increasing membrane structure, thus improve the heat exchange efficiency of hotting mask and fluid.Above-mentioned is upper
Trip side and downstream flow to define according to fluid, and in the present embodiment, fluid flows in left-right direction.
Above-mentioned insulating chamber 11 is positioned at the central part of silicon substrate 1, and insulating chamber 11 penetrates silicon substrate 1, makes hotting mask
Lower surface exposes from insulating chamber 11.
Above-mentioned membrane structure include ground floor dielectric film 3, heat-sensitive layer, second layer dielectric film 5, for adding above-mentioned
Thermal resistance 40 and multiple temperature element control with external signal and process signal lead 6, the passivation layer 7 that circuit is connected.
Ground floor dielectric film 3 thickness is 0.3 μm～2 μm, and material is preferably silicon oxide, silicon nitride or silicon oxynitride, also
Can be silicon oxide and silicon nitride composite membrane.
Heat-sensitive layer material is preferably the one in doped amorphous silicon, doped monocrystalline silicon, DOPOS doped polycrystalline silicon, vanadium oxide, or its
In several composite, it is also possible to for the one in Ti, Pt, Ni, Cr, or the composite of the most several composition, it is also possible to
For the thermocouple material such as P-Si/n-Si or Si/Al, it is also possible to for Si/GeSi superlattices, it is also possible to for PN junction.
Heat-sensitive layer includes above-mentioned adding thermal resistance 40 and multiple temperature element.Heat-sensitive layer also includes hereafter will carrying out specifically
The temperature-sensitive strip projection 44 described.
Multiple temperature elements include at least one first temperature element 41 being arranged on membrane structure edge, are used for detecting stream
Enter the initial temperature to hotting mask upper fluid.In the present embodiment as shown in Figure 1, the first temperature element 41 has two, sets respectively
Put the relative Liang Ge edge (hereinafter referred to as left hand edge and right hand edge) in hotting mask structure, when fluid flows into from left hand edge,
The first temperature element 41 being then positioned at left hand edge works, and when fluid flows into from right hand edge, is then positioned at the first thermometric of right hand edge
Element 41 works.
Multiple temperature elements also include being distributed at least two the second temperature element 42 adding thermal resistance 40 both sides, for dividing
Jian Ce not flow through the temperature added before and after thermal resistance 40 by fluid.In the present embodiment as shown in Figure 1, the second temperature element
42 have two, are separately positioned on the left and right sides adding thermal resistance 40, are respectively designated as left temperature element and right temperature element.
Preferably, multiple temperature elements also include being arranged at least added between thermal resistance 40 and the second temperature element 42
Individual 3rd temperature element 43, for detection hotting mask temperature in real time, the 3rd temperature element 43 in the present embodiment has two, sets respectively
Put between two the second temperature elements 42 and the first temperature element 41.
Add thermal resistance 40 and the second temperature element 42 and the 3rd temperature element 43 is positioned at the top of insulating chamber 111, i.e.
Adding thermal resistance 40 and the second temperature element the 42, the 3rd temperature element 43 belongs to the part of hotting mask, the first temperature element 41 is then
It is positioned at the top of the part in addition to insulating chamber 11 of silicon substrate 1.
Preferably, the length direction adding thermal resistance 40 and multiple temperature element is each perpendicular to fluid flow direction setting.
Second layer dielectric film 5 thickness is 0.2 μm～1 μm, and material is preferably silicon oxide, silicon nitride or silicon oxynitride, also
Can be silicon oxide and silicon nitride composite membrane.There is on second layer dielectric film 5 multiple lead-in wire running through second layer dielectric film 5
Hole 51, corresponding end and the end of multiple temperature element adding thermal resistance 40 respectively, the position of multiple fairleads 51.
The metal materials such as signal lead 6 material preferred Al, Ti, Pt, TiN, W and alloy thereof or DOPOS doped polycrystalline silicon, germanium etc. are low
Resistance semi-conducting material.One end of signal lead 6 by fairlead 51 with add thermal resistance 40 or temperature element is connected.
Passivation layer 7 thickness is 0.3 μm～2 μm, and material is preferably silicon oxide, silicon nitride or silicon oxynitride, it is also possible to for oxygen
SiClx and silicon nitride composite membrane.Passivation layer 7 has multiple multiple perforates 71 running through passivation layer 7, and the position of multiple perforates 71 is divided
The other end of the most corresponding each signal lead 6, thus the other end of signal lead 6 can by perforate 71 and external signal control with
Process circuit is connected.
Above-mentioned rectifier structure includes that multiple boss 21 and multiple groove 22, boss 21 and groove 22 are intervally installed,
The length direction of boss 21 and groove 22 flows to arrange each along fluid.Each boss 21 is by temperature-sensitive strip projection 44, the second layer
Dielectric film 5 be positioned at the part above temperature-sensitive strip projection 44, passivation layer 7 be positioned at the part above temperature-sensitive strip projection 44
Constitute.Each groove 22 is by the part between adjacent two temperature-sensitive strip projections 44 of second layer dielectric film 5, passivation layer
The part between adjacent two temperature-sensitive strip projections 44 of 7 is constituted, and the length direction of temperature-sensitive strip projection 44 is along fluid
Flow to arrange.
Originally the operation principle with the hollow out heat membrane type flow sensor of rectifier structure is: controlled and place by external signal
Reason circuit is controlled so that the temperature of hotting mask is consistently higher than the temperature of the detected fluid entering flow transducer, and the temperature difference begins
Keep steady state value eventually.Add thermal resistance 40 symmetrical distribution the second temperature element 42, form Wheatstone bridge, be used for measuring fluid
Mass flow.When fluid is through out-of-date, and it is advection state that fluid is rectified structure 2 rectification, it is positioned at and adds the of thermal resistance 40 upstream
Two temperature element 42(are according to the flow direction of fluid, in left temperature element and right temperature element), owing to fluid temperature (F.T.) is little
In hotting mask temperature, the partial heat of the second temperature element 42 of upstream is carried away by the flow, and causes at this second temperature element 42
Temperature reduces, and for the second temperature element 42 of positive temperature coefficient, its resistance reduces；And it is positioned at the second survey adding thermal resistance downstream
Temperature element 42(is according to the flow direction of fluid, for another in left temperature element and right temperature element), owing to fluid is through heating
Resistance 40 achieves heating, when it is at second temperature element 42 in downstream, carries out heat exchange so that downstream the second thermometric
Element 42 is heated and temperature raises, and similarly for the second temperature element 42 of positive temperature coefficient, its resistance increases, by outside
Signal controls and reduction and the increase processing electric circuit inspection upstream and downstream the second temperature element 42, it is achieved thereby that pass through inflow-rate of water turbine
The flow measurement of the fluid of sensor.
5 to accompanying drawing 13, the making side of a kind of above-mentioned hollow out heat membrane type flow sensor with rectifier structure referring to the drawings
Method, and the material corresponding parts of making mentioned above used, the thickness of corresponding component and degree of depth equidimension are according to institute above
The correspondingly-sized shown makes, and this manufacture method comprises the following steps:
A. the front and back at silicon substrate 1 grows ground floor dielectric film 3 respectively, as shown in Figure 5；
B. on the ground floor dielectric film 3 be positioned at front, grow heat-sensitive layer thin film, and graphically formed and add thermal resistance 40, many
Individual temperature element and multiple temperature-sensitive strip projection 44, add thermal resistance 40, the length direction of multiple temperature element is perpendicular to fluid
Flowing to arrange, the length direction of temperature-sensitive strip projection 44 flows to arrange, as shown in accompanying drawing 6 and accompanying drawing 7 along fluid；
C. growth regulation two layer medium thin film 5, and graphically, correspondence add formed respectively at thermal resistance 40 and temperature element multiple
Fairlead 51, as illustrated in Figure 8 and 9 reference；
D. growth trace layer thin film, and graphically, form multiple signal lead 6, fairlead is passed through in each signal lead 6 one end
51 connections add thermal resistance or a temperature element, as shown in Figure 10；
E. growth of passivation layer 7, and graphically, at the other end of corresponding each signal lead 6, form perforate 71 make signal lead
6 expose from this perforate 71, as shown in accompanying drawing 11 and accompanying drawing 12；
F. silicon substrate 1 back side is corroded to hotting mask and expose, and form insulating chamber 11, as shown in Figure 13.
This, with the hollow out heat membrane type flow sensor and preparation method thereof of rectifier structure, has the advantage that
On the one hand 1., with the design of rectifier structure, can treat that fluid measured rectification is advection state by flow through hotting mask, thus improve
Its detection accuracy, on the other hand increases the contact area treating fluid measured with hotting mask, therefore improves heat exchange efficiency, so that
Detectivity is improved；
2. mass flow sensor uses Micrometer-Nanometer Processing Technology to be processed, and therefore its overall volume is little, it is easy to metaplasia in batches
Produce, low cost.
Above in association with embodiment, the present invention is elaborated, only for technology design and the feature of the explanation present invention,
Its object is to allow person skilled in the art understand present disclosure and to be carried out, can not limit the present invention's with this
Protection domain, all equivalence changes done according to spirit of the invention or modification, all should contain in protection scope of the present invention
In.
Claims (10)
1., with a hollow out heat membrane type flow sensor for rectifier structure, it includes silicon substrate (1), is positioned at this silicon substrate (1)
Front also has and adds thermal resistance (40) and the membrane structure of multiple temperature element, and described silicon substrate (1) has insulating chamber
(11), the part being positioned at this insulating chamber (11) top of described membrane structure is defined as hotting mask, it is characterised in that: described
Membrane structure have lay respectively at described hotting mask upstream side and downstream and the fluid rectification for flowing through be advection state also
Increase by two rectifier structures (2) that membrane structure is long-pending with fluid contact level.
Hollow out heat membrane type flow sensor with rectifier structure the most according to claim 1, it is characterised in that: described
Rectifier structure includes that multiple boss (21) and multiple groove (22), described boss (21) and groove (22) are intervally installed,
The length direction of boss (21) and groove (22) flows to arrange each along fluid.
Hollow out heat membrane type flow sensor with rectifier structure the most according to claim 1, it is characterised in that: described
Membrane structure includes ground floor dielectric film (3), include described in add thermal resistance (40) and the heat-sensitive layer of multiple temperature element, second
Layer dielectric film (5), for above-mentioned thermal resistance (40) and multiple temperature element and the external signal of adding is controlled and process circuit phase
The signal lead (6) of connection, passivation layer (7).
Hollow out heat membrane type flow sensor with rectifier structure the most according to claim 3, it is characterised in that: described
Rectifier structure (2) includes that multiple boss (21) and multiple groove (22), described boss (21) and groove (22) are spaced and set
Put, each described boss (21) by temperature-sensitive strip protruding (44), described second layer dielectric film (5) be positioned at described temperature-sensitive strip
The part of protruding (44) top, the part being positioned at described temperature-sensitive strip protruding (44) top of described passivation layer (7) are constituted, each
Described groove (22) is by the portion being positioned between adjacent two described temperature-sensitive strips protruding (44) of described second layer dielectric film (5)
Divide, the part being positioned between adjacent two described temperature-sensitive strips protruding (44) of described passivation layer (7) is constituted, and described temperature-sensitive is long
The length direction of bar protruding (44) flows to arrange along fluid.
Hollow out heat membrane type flow sensor with rectifier structure the most according to claim 4, it is characterised in that: described
Heat-sensitive layer also includes that described temperature-sensitive strip is protruding (44).
Hollow out heat membrane type flow sensor with rectifier structure the most according to claim 1, it is characterised in that: described
Multiple temperature elements include the edge being arranged on described membrane structure and are flowed into the initial temperature of hotting mask upper fluid for detection
At least one first temperature element (41), be distributed in described in add thermal resistance (40) both sides and for respectively detection fluid flow through
Add at least two the second temperature element (42) of temperature before and after thermal resistance (40).
Hollow out heat membrane type flow sensor with rectifier structure the most according to claim 6, it is characterised in that: described
Add thermal resistance (40) and the second temperature element (42) is positioned at the top of described insulating chamber (11).
Hollow out heat membrane type flow sensor with rectifier structure the most according to claim 6, it is characterised in that: described
Multiple temperature elements also include being arranged on described in add between thermal resistance (40) and described second temperature element (42) in real time
At least one the 3rd temperature element (43) of detection hotting mask temperature.
Hollow out heat membrane type flow sensor with rectifier structure the most according to claim 1, it is characterised in that: described
The length direction adding thermal resistance (40) and multiple temperature element is each perpendicular to fluid flow direction setting.
10. the making of the hollow out heat membrane type flow sensor with rectifier structure according to any one of claim 1-9
Method, comprises the following steps:
A. the front and back at silicon substrate (1) grows ground floor dielectric film (3) respectively；
B. it is being positioned at described ground floor dielectric film (3) the upper growth heat-sensitive layer thin film in front, and graphically formation is adding thermal resistance
(40), multiple temperature element and multiple temperature-sensitive strip projection (44), the length direction edge of described temperature-sensitive strip protruding (44)
Fluid to flow to arrange；
C. growth regulation two layer medium thin film (5), and graphically, add in correspondence and formed respectively at thermal resistance (40) and temperature element
Multiple fairleads (51)；
D. growth trace layer thin film, and graphically, form multiple signal lead (6), each described signal lead (6) one end leads to
Cross described fairlead (51) connection and add thermal resistance or a temperature element；
E. growth of passivation layer (7), and graphically, at the other end of corresponding each described signal lead (6), form perforate (71)
Signal lead (6) is made to expose from this perforate (71)；
F. silicon substrate (1) back side is corroded to hotting mask and expose, and form insulating chamber (11).
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106768112A (en) * | 2016-12-30 | 2017-05-31 | 苏州容启传感器科技有限公司 | Thermal flow rate sensor and preparation method thereof and application |
| CN106895886A (en) * | 2017-04-13 | 2017-06-27 | 南京信息工程大学 | High sensitivity gas flow surveying instrument and method based on huge piezoresistance sensor |
| CN110726443A (en) * | 2019-09-09 | 2020-01-24 | 浙江省北大信息技术高等研究院 | Medical flow sensor and medical flow detection system provided with same |
| CN115127631A (en) * | 2021-03-26 | 2022-09-30 | 苏州原位芯片科技有限责任公司 | Temperature compensation method for hot film type flowmeter |
| CN115127631B (en) * | 2021-03-26 | 2025-03-21 | 苏州原位芯片科技有限责任公司 | A temperature compensation method for hot film flowmeter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106768112A (en) * | 2016-12-30 | 2017-05-31 | 苏州容启传感器科技有限公司 | Thermal flow rate sensor and preparation method thereof and application |
| CN106895886A (en) * | 2017-04-13 | 2017-06-27 | 南京信息工程大学 | High sensitivity gas flow surveying instrument and method based on huge piezoresistance sensor |
| CN110726443A (en) * | 2019-09-09 | 2020-01-24 | 浙江省北大信息技术高等研究院 | Medical flow sensor and medical flow detection system provided with same |
| CN115127631A (en) * | 2021-03-26 | 2022-09-30 | 苏州原位芯片科技有限责任公司 | Temperature compensation method for hot film type flowmeter |
| CN115127631B (en) * | 2021-03-26 | 2025-03-21 | 苏州原位芯片科技有限责任公司 | A temperature compensation method for hot film flowmeter |
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