CN106087068A - A kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof - Google Patents
A kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof Download PDFInfo
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- 239000007788 liquid Substances 0.000 title claims abstract description 12
- 229920001661 Chitosan Polymers 0.000 title claims abstract description 9
- 238000002360 preparation method Methods 0.000 title claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 14
- 229910052710 silicon Inorganic materials 0.000 title abstract description 14
- 239000010703 silicon Substances 0.000 title abstract description 14
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 title 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 title 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 24
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 21
- 210000004027 cell Anatomy 0.000 claims abstract description 17
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 16
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002994 raw material Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims abstract description 8
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims abstract description 7
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims abstract description 7
- LCRMGUFGEDUSOG-UHFFFAOYSA-N naphthalen-1-ylsulfonyloxymethyl naphthalene-1-sulfonate;sodium Chemical compound [Na].C1=CC=C2C(S(=O)(OCOS(=O)(=O)C=3C4=CC=CC=C4C=CC=3)=O)=CC=CC2=C1 LCRMGUFGEDUSOG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 235000019333 sodium laurylsulphate Nutrition 0.000 claims abstract description 7
- LBTSNEJGMVFUEW-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,8,8,8-dodecafluorooctoxy-dimethoxy-propylsilane Chemical compound FC(C(C(C(C(F)(F)CO[Si](OC)(OC)CCC)(F)F)(F)F)(F)F)CC(F)(F)F LBTSNEJGMVFUEW-UHFFFAOYSA-N 0.000 claims abstract description 6
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims abstract description 4
- 229930195725 Mannitol Natural products 0.000 claims abstract description 4
- 235000010355 mannitol Nutrition 0.000 claims abstract description 4
- 239000000594 mannitol Substances 0.000 claims abstract description 4
- 238000003756 stirring Methods 0.000 claims description 21
- 239000000243 solution Substances 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 7
- 239000000839 emulsion Substances 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 2
- 230000036632 reaction speed Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
本发明公开了一种壳聚糖‑氨基磺酸单晶硅太阳能电池片表面织构液，其是由下述重量份的原料制得：壳聚糖0.05‑0.1，氨基磺酸0.3‑0.5，苯乙烯1.5‑2.5，5‑10%过硫酸铵溶液1‑2，十二烷基硫酸钠0.1‑0.2，十二氟庚基丙基三甲氧基硅烷0.1‑0.15，氢氧化钠3‑5，柠檬酸0.3‑0.5，亚甲基双萘磺酸钠0.1‑0.15，甘露醇0.3‑0.5，水100‑120。本发明的硅片织构液腐蚀适中、减薄量小、重复利用率高，制得的绒面腐蚀效果好，金字塔大小均匀，颗粒较小，覆盖率高，并且反应速度快，质量稳定性好，绿色环保。The invention discloses a chitosan-sulfamic acid monocrystalline silicon solar cell surface texture liquid, which is prepared from the following raw materials in parts by weight: chitosan 0.05-0.1, sulfamic acid 0.3-0.5, Styrene 1.5‑2.5, 5‑10% ammonium persulfate solution 1‑2, sodium lauryl sulfate 0.1‑0.2, dodecafluoroheptylpropyltrimethoxysilane 0.1‑0.15, sodium hydroxide 3‑5, Citric acid 0.3-0.5, sodium methylene bis-naphthalene sulfonate 0.1-0.15, mannitol 0.3-0.5, water 100-120. The silicon chip texture liquid of the present invention has moderate corrosion, small thinning amount and high reuse rate, and the obtained suede surface has good corrosion effect, uniform pyramid size, small particles, high coverage rate, fast reaction speed and stable quality Well, go green.
Description
技术领域technical field
本发明涉及太阳能电池技术领域，尤其涉及一种壳聚糖-氨基磺酸单晶硅太阳能电池片表面织构液及其制备方法。The invention relates to the technical field of solar cells, in particular to a chitosan-sulfamic acid monocrystalline silicon solar cell surface texture liquid and a preparation method thereof.
背景技术Background technique
随着世界能源危机愈发严重，太阳能已成为最有潜力的替代能源，而太阳能电池即是一种将太阳能直接转换为电能的电子元件。阻碍太阳能电池技术发展的最主要问题是其居高不下的制造成本。目前，为降低单晶硅太阳能电池的成本以及提高光电转化效率，进行硅表面织构是最易实现和最高效的方法。织构又称制绒，即利用陷光原理，使入射光进行多次反射延长其在电池表面的传播路径，从而提高太阳能电池对光的吸收效率。利用硅的各向异性腐蚀的原理，单晶硅表面可形成类似金字塔的结构，有效降低太阳光的反射率。As the world's energy crisis becomes more serious, solar energy has become the most potential alternative energy source, and a solar cell is an electronic component that directly converts solar energy into electrical energy. The main problem hindering the development of solar cell technology is its high manufacturing cost. At present, in order to reduce the cost of monocrystalline silicon solar cells and improve the photoelectric conversion efficiency, silicon surface texturing is the easiest and most efficient method. Texture, also known as velvet, uses the principle of light trapping to make the incident light reflect multiple times to prolong its propagation path on the surface of the battery, thereby improving the light absorption efficiency of solar cells. Using the principle of anisotropic etching of silicon, a pyramid-like structure can be formed on the surface of single crystal silicon, effectively reducing the reflectivity of sunlight.
目前，单晶硅表面织构最常用的是化学腐蚀法，普遍使用的织构液是 NaOH/异丙醇体系，然而异丙醇价格高，挥发速度快，成本高且不利于环保。专利201010161287.8公开了一种单晶硅添加剂制绒液，由碱性腐蚀液和表面活性剂及有机酸或盐组成，不含异丙醇并且快速高效，然而其存在反应均匀性差的问题，容易造成织构后硅表面金字塔偏大以及局部过腐蚀等情况，在制成硅片的质量上还有待进一步改进。At present, chemical etching is the most commonly used method for surface texturing of monocrystalline silicon. The commonly used texturing solution is NaOH/isopropanol system. However, isopropanol is expensive, volatilizes quickly, costs high and is not conducive to environmental protection. Patent 201010161287.8 discloses a monocrystalline silicon additive texturing solution, which is composed of alkaline corrosion solution, surfactant and organic acid or salt, does not contain isopropanol and is fast and efficient, but it has the problem of poor uniformity of reaction, which is easy to cause After texturing, the pyramids on the silicon surface are too large and local over-corrosion, etc., still need to be further improved in the quality of the silicon wafer.
发明内容Contents of the invention
本发明目的就是为了弥补已有技术的缺陷，提供一种反应速度快、均匀性好，腐蚀适中、减薄量小、硅片表面质量高的壳聚糖-氨基磺酸单晶硅太阳能电池片表面织构液及其制备方法。The purpose of the present invention is to make up for the defects of the prior art, and to provide a chitosan-sulfamic acid monocrystalline silicon solar cell with fast reaction speed, good uniformity, moderate corrosion, small thinning, and high surface quality of silicon wafers. Surface texturing liquid and its preparation method.
本发明是通过以下技术方案实现的：The present invention is achieved through the following technical solutions:
一种壳聚糖-氨基磺酸单晶硅太阳能电池片表面织构液，其是由下述重量份的原料制得：A kind of chitosan-sulfamic acid monocrystalline silicon solar cell sheet surface texture liquid, it is made by the raw material of following weight part:
壳聚糖0.05-0.1，氨基磺酸0.3-0.5，苯乙烯1.5-2.5，5-10%过硫酸铵溶液1-2，十二烷基硫酸钠0.1-0.2，十二氟庚基丙基三甲氧基硅烷0.1-0.15，氢氧化钠3-5，柠檬酸0.3-0.5，亚甲基双萘磺酸钠0.1-0.15，甘露醇0.3-0.5，水100-120。Chitosan 0.05-0.1, sulfamic acid 0.3-0.5, styrene 1.5-2.5, 5-10% ammonium persulfate solution 1-2, sodium lauryl sulfate 0.1-0.2, dodecafluoroheptylpropyl trimethyl Oxysilane 0.1-0.15, sodium hydroxide 3-5, citric acid 0.3-0.5, sodium methylene bis-naphthalene sulfonate 0.1-0.15, mannitol 0.3-0.5, water 100-120.
一种壳聚糖-氨基磺酸单晶硅太阳能电池片表面织构液的制备方法，包括以下步骤：A preparation method of chitosan-sulfamic acid monocrystalline silicon solar cell surface texture liquid, comprising the following steps:
（1）按重量称取原料，先将十二烷基硫酸钠加入1/3-1/2重量的水中搅拌均匀，然后缓慢加入苯乙烯和十二氟庚基丙基三甲氧基硅烷的混合物并搅拌0.5-1h，最后缓慢滴加过硫酸铵溶液并于70-80℃搅拌2-4h，保温3-5h后冷却，得复合乳液；(1) Weigh the raw materials by weight, first add sodium lauryl sulfate to 1/3-1/2 weight of water and stir evenly, then slowly add the mixture of styrene and dodecafluoroheptylpropyltrimethoxysilane And stir for 0.5-1h, finally slowly add ammonium persulfate solution dropwise and stir at 70-80°C for 2-4h, keep warm for 3-5h and then cool to obtain a composite emulsion;
（2）先将壳聚糖、氨基磺酸和柠檬酸加入余量的水中60-80℃搅拌0.5-1h，然后加入氢氧化钠和亚甲基双萘磺酸钠同样条件下搅拌1-2h，冷却后加入其余原料搅拌均匀，得混合液；(2) Add chitosan, sulfamic acid and citric acid to the rest of the water and stir at 60-80°C for 0.5-1h, then add sodium hydroxide and sodium methylene bis-naphthalenesulfonate and stir for 1-2h under the same conditions , after cooling, add the remaining raw materials and stir evenly to obtain a mixed solution;
（3）将步骤（1）中的复合乳液缓慢加入步骤（2）中的混合液中并于60-80℃搅拌均匀，过滤除去杂质后即得壳聚糖-氨基磺酸单晶硅太阳能电池片表面织构液。(3) Slowly add the composite emulsion in step (1) to the mixed solution in step (2) and stir evenly at 60-80°C, filter to remove impurities to obtain a chitosan-sulfamic acid monocrystalline silicon solar cell Sheet surface texturing fluid.
本发明的优点是：The advantages of the present invention are:
本发明利用苯乙烯和十二氟庚基丙基三甲氧基硅烷乳液聚合合成复合微球，可以良好地附着在硅片表面，起到一定的腐蚀掩膜功效，既能减少硅片的过度腐蚀，同时提升反应的均匀性，改善绒面质量，又不易在硅片表面残留，保证硅片的清洁性；同时，通过壳聚糖、氨基磺酸等原料的复配与增效作用，使得到的硅片织构液腐蚀适中、减薄量小、重复利用率高，制得的绒面腐蚀效果好，金字塔大小均匀，颗粒较小，覆盖率高，并且反应速度快，质量稳定性好，绿色环保。The invention utilizes styrene and dodecafluoroheptylpropyltrimethoxysilane emulsion polymerization to synthesize composite microspheres, which can be well attached to the surface of silicon wafers and play a certain corrosion mask effect, which can not only reduce excessive corrosion of silicon wafers At the same time, the uniformity of the reaction is improved, the quality of the suede surface is improved, and it is not easy to remain on the surface of the silicon wafer to ensure the cleanliness of the silicon wafer; at the same time, through the compounding and synergistic effect of chitosan, sulfamic acid and other raw materials The silicon wafer texture solution has moderate corrosion, small thinning, and high reuse rate. The suede surface obtained has a good corrosion effect, uniform pyramid size, small particles, high coverage, fast response speed, and good quality stability. Green.
具体实施方式detailed description
一种壳聚糖-氨基磺酸单晶硅太阳能电池片表面织构液，由下列重量(kg)的组分原料制备而成：A chitosan-sulfamic acid monocrystalline silicon solar cell surface texture liquid is prepared from the component raw materials of the following weight (kg):
壳聚糖0.05，氨基磺酸0.3，苯乙烯1.5，5%过硫酸铵溶液1，十二烷基硫酸钠0.1，十二氟庚基丙基三甲氧基硅烷0.1，氢氧化钠3，柠檬酸0.3，亚甲基双萘磺酸钠0.1，甘露醇0.3，水100。Chitosan 0.05, sulfamic acid 0.3, styrene 1.5, 5% ammonium persulfate solution 1, sodium lauryl sulfate 0.1, dodecafluoroheptylpropyltrimethoxysilane 0.1, sodium hydroxide 3, citric acid 0.3, sodium methylene bis-naphthalene sulfonate 0.1, mannitol 0.3, water 100.
一种壳聚糖-氨基磺酸单晶硅太阳能电池片表面织构液的制备方法，包括以下步骤：A preparation method of chitosan-sulfamic acid monocrystalline silicon solar cell surface texture liquid, comprising the following steps:
（1）按重量称取原料，先将十二烷基硫酸钠加入1/3重量的水中搅拌均匀，然后缓慢加入苯乙烯和十二氟庚基丙基三甲氧基硅烷的混合物并搅拌0.5h，最后缓慢滴加过硫酸铵溶液并于70℃搅拌2h，保温3h后冷却，得复合乳液；(1) Weigh raw materials by weight, first add sodium lauryl sulfate to 1/3 weight of water and stir evenly, then slowly add the mixture of styrene and dodecafluoroheptylpropyltrimethoxysilane and stir for 0.5h , and finally slowly add ammonium persulfate solution dropwise and stir at 70°C for 2 hours, keep warm for 3 hours and then cool to obtain a composite emulsion;
（2）先将壳聚糖、氨基磺酸和柠檬酸加入余量的水中60℃搅拌0.5h，然后加入氢氧化钠和亚甲基双萘磺酸钠同样条件下搅拌1h，冷却后加入其余原料搅拌均匀，得混合液；(2) First add chitosan, sulfamic acid and citric acid to the rest of the water and stir at 60°C for 0.5h, then add sodium hydroxide and sodium methylene bis-naphthalenesulfonate and stir for 1h under the same conditions, add the rest after cooling Stir the raw materials evenly to obtain a mixture;
（3）将步骤（1）中的复合乳液缓慢加入步骤（2）中的混合液中并于60℃搅拌均匀，过滤除去杂质后即得壳聚糖-氨基磺酸单晶硅太阳能电池片表面织构液。(3) Slowly add the composite emulsion in step (1) to the mixed solution in step (2) and stir evenly at 60°C, filter to remove impurities to obtain the surface of chitosan-sulfamic acid monocrystalline silicon solar cells Texturizing fluid.
经检验，上述织构液在80℃、15min条件下能在硅片表面制备均匀的小尺寸金字塔结构，其制备的金字塔在0.5-1.5μm，在300-1100nm范围内的平均反射率为9.2%，被腐蚀掉的硅片量约为5.1%。After inspection, the above-mentioned texture liquid can prepare a uniform small-sized pyramid structure on the surface of a silicon wafer under the condition of 80°C and 15 minutes. , the amount of silicon wafers etched away is about 5.1%.
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