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CN106059512A - Novel low-complexity broadband variable gain amplifier - Google Patents

Novel low-complexity broadband variable gain amplifier Download PDF

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Publication number
CN106059512A
CN106059512A CN201610364075.7A CN201610364075A CN106059512A CN 106059512 A CN106059512 A CN 106059512A CN 201610364075 A CN201610364075 A CN 201610364075A CN 106059512 A CN106059512 A CN 106059512A
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China
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pmos transistor
nmos transistor
drain
circuit
transistor
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吴朝晖
陈振业
赵明剑
李斌
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South China University of Technology SCUT
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South China University of Technology SCUT
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42Modifications of amplifiers to extend the bandwidth
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45479Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

本发明公开了一种新型低复杂度宽带可变增益放大器,包括有源负载电路、电流源电路、差分输入电路、gm‑boost电路和增益控制电路,所述有源负载电路分别与gm‑boost电路和差分输入电路连接,所述电流源电路分别与差分输入电路、gm‑boost电路和增益控制电路连接。本发明不需要指数发生电路即可实现输出与输入的dB线性关系,其通过gm‑boost电路有效增强VGA的等效输入跨导,使得VGA能具有较高的线性度和较宽的dB线性范围,同时通过有源负载电路能在不增加VGA功耗的前提下,大大扩展VGA的带宽。本发明可广泛应用于放大器产品中。

The invention discloses a novel low-complexity broadband variable gain amplifier, which comprises an active load circuit, a current source circuit, a differential input circuit, a gm-boost circuit and a gain control circuit, and the active load circuit is connected with the gm-boost respectively. The circuit is connected to the differential input circuit, and the current source circuit is respectively connected to the differential input circuit, the gm-boost circuit and the gain control circuit. The present invention can realize the dB linear relationship between the output and the input without an exponential generating circuit, and effectively enhances the equivalent input transconductance of the VGA through the gm-boost circuit, so that the VGA can have higher linearity and a wider dB linear range At the same time, the bandwidth of the VGA can be greatly expanded without increasing the power consumption of the VGA through the active load circuit. The invention can be widely used in amplifier products.

Description

一种新型低复杂度宽带可变增益放大器A Novel Low Complexity Broadband Variable Gain Amplifier

技术领域technical field

本发明涉及电子电路技术领域,尤其涉及一种新型低复杂度宽带可变增益放大器。The invention relates to the technical field of electronic circuits, in particular to a novel low-complexity broadband variable gain amplifier.

背景技术Background technique

VGA,即可变增益放大器,在模拟集成电路系统中,VGA可以根据不同的控制电压调整出不同的信号增益。在无线通信收发系统、人体介质通信、磁盘存取电路和微弱信号处理等领域中,由于受通信距离、传输路径和阻挡衰落等因素的影响,接收信号的动态范围大。因此,为了保证接收信号具有较好的稳定性,接收系统增益的可调特性变得尤为重要。VGA可以根据反馈信号调整输出增益,把接收信号稳定在一个预定的幅值附近。VGA的线性度,dB线性范围和带宽很大程度上决定其性能和应用范围。现有的VGA通常通过增加较为复杂指数发生电路来增加其线性度和dB线性范围,使得电路的复杂度和芯片的面积增加,芯片的生产成本增高。为了增加VGA的带宽,多数VGA通过加大消耗电流来达到目的,使得系统的功耗大大增加。VGA is a variable gain amplifier. In an analog integrated circuit system, VGA can adjust different signal gains according to different control voltages. In the fields of wireless communication transceiver system, human body medium communication, disk access circuit and weak signal processing, due to the influence of factors such as communication distance, transmission path and blocking fading, the dynamic range of the received signal is large. Therefore, in order to ensure better stability of the received signal, the adjustable characteristic of the gain of the receiving system becomes particularly important. VGA can adjust the output gain according to the feedback signal, and stabilize the received signal near a predetermined amplitude. The linearity, dB linear range and bandwidth of VGA largely determine its performance and application range. The existing VGA usually increases its linearity and dB linear range by adding a relatively complex exponential generating circuit, which increases the complexity of the circuit and the area of the chip, and increases the production cost of the chip. In order to increase the bandwidth of the VGA, most VGAs achieve the goal by increasing the current consumption, which greatly increases the power consumption of the system.

发明内容Contents of the invention

为了解决上述技术问题,本发明的目的是提供一种能提高线性度,且能扩展带宽的一种新型低复杂度宽带可变增益放大器。In order to solve the above technical problems, the object of the present invention is to provide a novel low-complexity broadband variable gain amplifier capable of improving linearity and extending bandwidth.

本发明所采取的技术方案是:The technical scheme that the present invention takes is:

一种新型低复杂度宽带可变增益放大器,包括有源负载电路、电流源电路、差分输入电路、gm-boost电路和增益控制电路,所述有源负载电路分别与gm-boost电路和差分输入电路连接,所述电流源电路分别与差分输入电路、gm-boost电路和增益控制电路连接。A novel low-complexity wideband variable gain amplifier, comprising an active load circuit, a current source circuit, a differential input circuit, a gm-boost circuit and a gain control circuit, the active load circuit is connected to the gm-boost circuit and the differential input circuit respectively The circuit is connected, and the current source circuit is respectively connected with the differential input circuit, the gm-boost circuit and the gain control circuit.

作为本发明的进一步改进,所述有源负载电路包括第一PMOS晶体管、第二PMOS晶体管、第五PMOS晶体管、第六PMOS晶体管、第一电阻、第二电阻、第三电阻、第四电阻、第一电容和第二电容,所述第一PMOS晶体管的源极、第二PMOS晶体管的源极、第五PMOS晶体管的源极和第六PMOS晶体管的源极均连接至电源端,所述第五PMOS晶体管的栅极通过第三电阻连接至第一PMOS晶体管的栅极,所述第六PMOS晶体管的栅极通过第四电阻连接至第二PMOS晶体管的栅极,所述第一PMOS晶体管的栅极和第二PMOS晶体管的栅极相连接,所述第一PMOS晶体管的栅极通过第一电阻连接至第一PMOS晶体管的漏极,所述第二PMOS晶体管的栅极通过第二电阻连接至第二PMOS晶体管的漏极,所述第五PMOS晶体管的栅极通过第一电容连接至第二PMOS晶体管的漏极,所述第六PMOS晶体管的栅极通过第二电容连接至第一PMOS晶体管的漏极,所述第一PMOS晶体管的漏极分别与第五PMOS晶体管的漏极、差分输入电路和gm-boost电路连接,所述第二PMOS晶体管的漏极分别与第六PMOS晶体管的漏极、差分输入电路和gm-boost电路连接,所述第一PMOS晶体管的漏极连接至负极输出端,所述第二PMOS晶体管的漏极连接至正极输出端。As a further improvement of the present invention, the active load circuit includes a first PMOS transistor, a second PMOS transistor, a fifth PMOS transistor, a sixth PMOS transistor, a first resistor, a second resistor, a third resistor, a fourth resistor, The first capacitor and the second capacitor, the source of the first PMOS transistor, the source of the second PMOS transistor, the source of the fifth PMOS transistor and the source of the sixth PMOS transistor are all connected to the power supply terminal, and the source of the first PMOS transistor is connected to the power supply terminal. The gates of the five PMOS transistors are connected to the gates of the first PMOS transistors through the third resistor, the gates of the sixth PMOS transistors are connected to the gates of the second PMOS transistors through the fourth resistor, and the gates of the first PMOS transistors The gate is connected to the gate of the second PMOS transistor, the gate of the first PMOS transistor is connected to the drain of the first PMOS transistor through a first resistor, and the gate of the second PMOS transistor is connected through a second resistor To the drain of the second PMOS transistor, the gate of the fifth PMOS transistor is connected to the drain of the second PMOS transistor through the first capacitor, and the gate of the sixth PMOS transistor is connected to the first PMOS transistor through the second capacitor The drain of the transistor, the drain of the first PMOS transistor is respectively connected to the drain of the fifth PMOS transistor, the differential input circuit and the gm-boost circuit, the drain of the second PMOS transistor is respectively connected to the sixth PMOS transistor The drain is connected to the differential input circuit and the gm-boost circuit, the drain of the first PMOS transistor is connected to the negative output terminal, and the drain of the second PMOS transistor is connected to the positive output terminal.

作为本发明的进一步改进,差分输入电路包括第一NMOS晶体管和第二NMOS晶体管,所述第一NMOS晶体管的漏极与第一PMOS晶体管的漏极相连接,所述第一NMOS晶体管的源极分别与gm-boost电路、增益控制电路和电流源电路相连接,所述第二NMOS晶体管的漏极与第二PMOS晶体管的漏极相连接,所述第二NMOS晶体管的源极分别与gm-boost电路、增益控制电路和电流源电路相连接,所述第一NMOS晶体管的栅极连接至正极输入端,所述第二NMOS晶体管的栅极连接至负极输入端。As a further improvement of the present invention, the differential input circuit includes a first NMOS transistor and a second NMOS transistor, the drain of the first NMOS transistor is connected to the drain of the first PMOS transistor, and the source of the first NMOS transistor respectively connected to the gm-boost circuit, the gain control circuit and the current source circuit, the drain of the second NMOS transistor is connected to the drain of the second PMOS transistor, and the source of the second NMOS transistor is respectively connected to the gm- The boost circuit, the gain control circuit and the current source circuit are connected, the gate of the first NMOS transistor is connected to the positive input terminal, and the gate of the second NMOS transistor is connected to the negative input terminal.

作为本发明的进一步改进,所述gm-boost电路包括第三PMOS晶体管和第四PMOS晶体管,所述第三PMOS晶体管的源极和第四PMOS晶体管的源极均连接至电源端,所述第三PMOS晶体管的栅极分别与第一NMOS晶体管的漏极和第一PMOS晶体管的漏极相连接,所述第三PMOS晶体管的漏极与第一NMOS晶体管的源极连接,所述第四PMOS晶体管的栅极分别与第二NMOS晶体管的漏极和第二PMOS晶体管的漏极相连接,所述第四PMOS晶体管的漏极与第二NMOS晶体管的源极连接。As a further improvement of the present invention, the gm-boost circuit includes a third PMOS transistor and a fourth PMOS transistor, the source of the third PMOS transistor and the source of the fourth PMOS transistor are both connected to the power supply terminal, and the first The gates of the three PMOS transistors are respectively connected to the drain of the first NMOS transistor and the drain of the first PMOS transistor, the drain of the third PMOS transistor is connected to the source of the first NMOS transistor, and the fourth PMOS The gate of the transistor is respectively connected to the drain of the second NMOS transistor and the drain of the second PMOS transistor, and the drain of the fourth PMOS transistor is connected to the source of the second NMOS transistor.

作为本发明的进一步改进,所述增益控制电路包括第三NMOS晶体管和第四NMOS晶体管,所述第三NMOS晶体管的栅极和第四NMOS晶体管的栅极均连接至增益控制电压端,所述第三NMOS晶体管的源极和第四NMOS晶体管的源极均连接至第一NMOS晶体管的源极,所述第三NMOS晶体管的漏极和第四NMOS晶体管的漏极均连接至第二NMOS晶体管的源极。As a further improvement of the present invention, the gain control circuit includes a third NMOS transistor and a fourth NMOS transistor, the gate of the third NMOS transistor and the gate of the fourth NMOS transistor are both connected to the gain control voltage terminal, the Both the source of the third NMOS transistor and the source of the fourth NMOS transistor are connected to the source of the first NMOS transistor, and the drain of the third NMOS transistor and the drain of the fourth NMOS transistor are both connected to the second NMOS transistor. source.

作为本发明的进一步改进,所述电流源电路包括第五NMOS晶体管和第六NMOS晶体管,所述第五NMOS晶体管的栅极和第六NMOS晶体管的栅极均连接至偏置电压端,所述第五NMOS晶体管的源极和第六NMOS晶体管的源极均与地连接,所述第五NMOS晶体管的漏极分别与第一NMOS晶体管的源极、第三PMOS晶体管的漏极、第三NMOS晶体管的源极和第四NMOS晶体管的源极相连接,所述第六NMOS晶体管的漏极分别与第二NMOS晶体管的源极、第四PMOS晶体管的漏极、第三NMOS晶体管的漏极和第四NMOS晶体管的漏极相连接。As a further improvement of the present invention, the current source circuit includes a fifth NMOS transistor and a sixth NMOS transistor, the gates of the fifth NMOS transistor and the sixth NMOS transistor are both connected to the bias voltage terminal, the The source of the fifth NMOS transistor and the source of the sixth NMOS transistor are both connected to the ground, and the drain of the fifth NMOS transistor is respectively connected to the source of the first NMOS transistor, the drain of the third PMOS transistor, the third NMOS transistor The source of the transistor is connected to the source of the fourth NMOS transistor, and the drain of the sixth NMOS transistor is respectively connected to the source of the second NMOS transistor, the drain of the fourth PMOS transistor, the drain of the third NMOS transistor and the drain of the sixth NMOS transistor. The drains of the fourth NMOS transistors are connected.

本发明的有益效果是:The beneficial effects of the present invention are:

本发明一种新型低复杂度宽带可变增益放大器不需要指数发生电路即可实现输出与输入的dB线性关系,其通过gm-boost电路有效增强VGA的等效输入跨导,使得VGA能具有较高的线性度和较宽的dB线性范围,同时通过有源负载电路能在不增加VGA功耗的前提下,大大扩展VGA的带宽。A novel low-complexity wideband variable gain amplifier of the present invention can realize the dB linear relationship between the output and the input without an exponential generating circuit, and effectively enhances the equivalent input transconductance of the VGA through the gm-boost circuit, so that the VGA can have a relatively high High linearity and wide dB linear range. At the same time, the bandwidth of the VGA can be greatly expanded without increasing the power consumption of the VGA through the active load circuit.

附图说明Description of drawings

下面结合附图对本发明的具体实施方式作进一步说明:The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

图1是本发明一种新型低复杂度宽带可变增益放大器的电路原理图;Fig. 1 is a circuit schematic diagram of a novel low-complexity broadband variable gain amplifier of the present invention;

图2是本发明实施例的VGA应用原理框图;Fig. 2 is a block diagram of the VGA application principle of the embodiment of the present invention;

图3是本发明假设没有gm-boost电路时的半边等效电路图;Fig. 3 is the half-side equivalent circuit diagram when the present invention assumes that there is no gm-boost circuit;

图4是本发明的半边等效电路图;Fig. 4 is half side equivalent circuit diagram of the present invention;

图5是本发明半边等效电路小型号模型图;Fig. 5 is a small-scale model diagram of a half-side equivalent circuit of the present invention;

图6是本发明有源负载电路图;Fig. 6 is an active load circuit diagram of the present invention;

图7是本发明有源负载电路小信号模型图;Fig. 7 is a small signal model diagram of the active load circuit of the present invention;

图8是本发明VGA增益后仿真结果图;Fig. 8 is the simulation result figure after VGA gain of the present invention;

图9是本发明VGA在不同控制电压下的增益仿真结果图;Fig. 9 is the gain simulation result figure of VGA of the present invention under different control voltages;

图10是本发明VGA增益控制电压与增益之间的dB线性关系图;Fig. 10 is a dB linear relationship diagram between VGA gain control voltage and gain of the present invention;

图11是本发明的dB线性曲线拟合图;Fig. 11 is the dB linear curve fitting figure of the present invention;

图12是本发明的dB线性误差示意图。Fig. 12 is a schematic diagram of the dB linearity error of the present invention.

具体实施方式detailed description

参考图1,本发明一种新型低复杂度宽带可变增益放大器,包括有源负载电路、电流源电路、差分输入电路、gm-boost电路和增益控制电路,所述有源负载电路分别与gm-boost电路和差分输入电路连接,所述电流源电路分别与差分输入电路、gm-boost电路和增益控制电路连接。Referring to Fig. 1, a novel low-complexity broadband variable gain amplifier of the present invention includes an active load circuit, a current source circuit, a differential input circuit, a gm-boost circuit and a gain control circuit, and the active load circuit is respectively connected to gm - the boost circuit is connected to the differential input circuit, and the current source circuit is respectively connected to the differential input circuit, the gm-boost circuit and the gain control circuit.

优选的,所述有源负载电路,用于补偿本发明系统的极点,达到扩展VGA带宽的目的。所述电流源电路,用于为本发明提供电流源,使得能工作在合适的静态工作点。所述gm-boost电路,用于增强本发明的等效输入跨导以提高线性度。所述差分输入电路,用于把差分输入电压信号转化为电流信号。所述增益控制电路,用于调整本发明的增益。Preferably, the active load circuit is used to compensate the pole of the system of the present invention to achieve the purpose of extending the bandwidth of the VGA. The current source circuit is used to provide a current source for the present invention, so that it can work at a suitable static operating point. The gm-boost circuit is used to enhance the equivalent input transconductance of the present invention to improve linearity. The differential input circuit is used to convert differential input voltage signals into current signals. The gain control circuit is used to adjust the gain of the present invention.

进一步作为优选的实施方式,所述有源负载电路包括第一PMOS晶体管PM1、第二PMOS晶体管PM2、第五PMOS晶体管PM5、第六PMOS晶体管PM6、第一电阻R1、第二电阻R2、第三电阻R3、第四电阻R4、第一电容C1和第二电容C2,所述第一PMOS晶体管PM1的源极、第二PMOS晶体管PM2的源极、第五PMOS晶体管PM5的源极和第六PMOS晶体管PM6的源极均连接至电源端,所述第五PMOS晶体管PM5的栅极通过第三电阻R3连接至第一PMOS晶体管PM1的栅极,所述第六PMOS晶体管PM6的栅极通过第四电阻R4连接至第二PMOS晶体管PM2的栅极,所述第一PMOS晶体管PM1的栅极和第二PMOS晶体管PM2的栅极相连接,所述第一PMOS晶体管PM1的栅极通过第一电阻R1连接至第一PMOS晶体管PM1的漏极,所述第二PMOS晶体管PM2的栅极通过第二电阻R2连接至第二PMOS晶体管PM2的漏极,所述第五PMOS晶体管PM5的栅极通过第一电容C1连接至第二PMOS晶体管PM2的漏极,所述第六PMOS晶体管PM6的栅极通过第二电容C2连接至第一PMOS晶体管PM1的漏极,所述第一PMOS晶体管PM1的漏极分别与第五PMOS晶体管PM5的漏极、差分输入电路和gm-boost电路连接,所述第二PMOS晶体管PM2的漏极分别与第六PMOS晶体管PM6的漏极、差分输入电路和gm-boost电路连接,所述第一PMOS晶体管PM1的漏极连接至负极输出端,所述第二PMOS晶体管PM2的漏极连接至正极输出端。As a further preferred embodiment, the active load circuit includes a first PMOS transistor PM1, a second PMOS transistor PM2, a fifth PMOS transistor PM5, a sixth PMOS transistor PM6, a first resistor R1, a second resistor R2, a third Resistor R3, fourth resistor R4, first capacitor C1 and second capacitor C2, the source of the first PMOS transistor PM1, the source of the second PMOS transistor PM2, the source of the fifth PMOS transistor PM5 and the sixth PMOS The sources of the transistor PM6 are all connected to the power supply terminal, the gate of the fifth PMOS transistor PM5 is connected to the gate of the first PMOS transistor PM1 through the third resistor R3, and the gate of the sixth PMOS transistor PM6 is connected through the fourth resistor R3. The resistor R4 is connected to the gate of the second PMOS transistor PM2, the gate of the first PMOS transistor PM1 is connected to the gate of the second PMOS transistor PM2, and the gate of the first PMOS transistor PM1 is connected to the gate of the first PMOS transistor PM1 through the first resistor R1 connected to the drain of the first PMOS transistor PM1, the gate of the second PMOS transistor PM2 is connected to the drain of the second PMOS transistor PM2 through the second resistor R2, and the gate of the fifth PMOS transistor PM5 is connected to the drain of the second PMOS transistor PM5 through the first The capacitor C1 is connected to the drain of the second PMOS transistor PM2, the gate of the sixth PMOS transistor PM6 is connected to the drain of the first PMOS transistor PM1 through the second capacitor C2, and the drains of the first PMOS transistor PM1 are respectively It is connected with the drain of the fifth PMOS transistor PM5, the differential input circuit and the gm-boost circuit, and the drain of the second PMOS transistor PM2 is respectively connected with the drain of the sixth PMOS transistor PM6, the differential input circuit and the gm-boost circuit , the drain of the first PMOS transistor PM1 is connected to the negative output terminal, and the drain of the second PMOS transistor PM2 is connected to the positive output terminal.

进一步作为优选的实施方式,差分输入电路包括第一NMOS晶体管NM1和第二NMOS晶体管NM2,所述第一NMOS晶体管NM1的漏极与第一PMOS晶体管PM1的漏极相连接,所述第一NMOS晶体管NM1的源极分别与gm-boost电路、增益控制电路和电流源电路相连接,所述第二NMOS晶体管NM2的漏极与第二PMOS晶体管PM2的漏极相连接,所述第二NMOS晶体管NM2的源极分别与gm-boost电路、增益控制电路和电流源电路相连接,所述第一NMOS晶体管NM1的栅极连接至正极输入端,所述第二NMOS晶体管NM2的栅极连接至负极输入端。Further as a preferred embodiment, the differential input circuit includes a first NMOS transistor NM1 and a second NMOS transistor NM2, the drain of the first NMOS transistor NM1 is connected to the drain of the first PMOS transistor PM1, and the first NMOS The source of the transistor NM1 is connected to the gm-boost circuit, the gain control circuit and the current source circuit respectively, the drain of the second NMOS transistor NM2 is connected to the drain of the second PMOS transistor PM2, and the second NMOS transistor The source of NM2 is respectively connected to the gm-boost circuit, the gain control circuit and the current source circuit, the gate of the first NMOS transistor NM1 is connected to the positive input terminal, and the gate of the second NMOS transistor NM2 is connected to the negative pole input.

进一步作为优选的实施方式,所述gm-boost电路包括第三PMOS晶体管PM3和第四PMOS晶体管PM4,所述第三PMOS晶体管PM3的源极和第四PMOS晶体管PM4的源极均连接至电源端,所述第三PMOS晶体管PM3的栅极分别与第一NMOS晶体管NM1的漏极和第一PMOS晶体管PM1的漏极相连接,所述第三PMOS晶体管PM3的漏极与第一NMOS晶体管NM1的源极连接,所述第四PMOS晶体管PM4的栅极分别与第二NMOS晶体管NM2的漏极和第二PMOS晶体管PM2的漏极相连接,所述第四PMOS晶体管PM4的漏极与第二NMOS晶体管NM2的源极连接。Further as a preferred embodiment, the gm-boost circuit includes a third PMOS transistor PM3 and a fourth PMOS transistor PM4, the source of the third PMOS transistor PM3 and the source of the fourth PMOS transistor PM4 are both connected to the power supply terminal , the gate of the third PMOS transistor PM3 is respectively connected to the drain of the first NMOS transistor NM1 and the drain of the first PMOS transistor PM1, and the drain of the third PMOS transistor PM3 is connected to the drain of the first NMOS transistor NM1 The source is connected, the gate of the fourth PMOS transistor PM4 is connected to the drain of the second NMOS transistor NM2 and the drain of the second PMOS transistor PM2 respectively, and the drain of the fourth PMOS transistor PM4 is connected to the drain of the second NMOS transistor PM4 Source connection of transistor NM2.

其中,所述gm-boost电路增强线性度的原理如下:Wherein, the principle of enhancing the linearity of the gm-boost circuit is as follows:

设在没有gm-boost电路时,把有源负载电路等效为Rout,把第一NMOS晶体管NM1的源极阻抗(第三PMOS晶体管PM3的等效电阻和第四PMOS晶体管PM4的等效电阻并联)等效为Rs,电路如图3所示,该电路为典型的带源极负反馈电阻的共源放大电路,由辅助定理易得电路的增益A为:When there is no gm-boost circuit, the active load circuit is equivalent to R out , and the source impedance of the first NMOS transistor NM1 (the equivalent resistance of the third PMOS transistor PM3 and the equivalent resistance of the fourth PMOS transistor PM4 Parallel connection) is equivalent to R s , the circuit is shown in Figure 3, this circuit is a typical common source amplifier circuit with source negative feedback resistance, and the gain A of the circuit is easily obtained from the auxiliary theorem:

A=-Gm·Rout (1)A=-G m R out (1)

设Gm为输入电路的输入等效跨导,可得:Let G m be the input equivalent transconductance of the input circuit, we can get:

GG mm == gg mm 11 11 ++ gg mm 11 RR sthe s -- -- -- (( 22 ))

其中gm1为第一NMOS晶体管NM1的跨导,当gm1>>1/Rs时,Gm≈1/Rs,即:Where g m1 is the transconductance of the first NMOS transistor NM1, when g m1 >>1/R s , G m ≈1/R s , that is:

A=Rout/Rs (3)A=R out /R s (3)

由式(2)和(3)可知,当gm1>>1/Rs时,增益随着Rs的线性变化而变化,电路的线性度高,但是随着第三NMOS晶体管NM3和第四NMOS晶体管NM4栅极电压增加,等效电阻Rs降低,gm1>>1/Rs不再成立,这将严重影响电路的线性度。It can be known from formulas (2) and (3) that when g m1 >>1/R s , the gain changes with the linear change of R s , and the linearity of the circuit is high, but with the third NMOS transistor NM3 and the fourth The NMOS transistor NM4 gate voltage increases, the equivalent resistance R s decreases, and g m1 >> 1/R s is no longer established, which will seriously affect the linearity of the circuit.

下面分析gm-boost电路的作用,即考虑第三PMOS晶体管PM3和第四PMOS晶体管PM4的作用,本发明的等效电路如图4所示,图4电路的小信号模型如图5所示。加入测试信号Vt,测试电流为It,ro1为第一NMOS晶体管NM1的沟道电阻,gmb1为第一NMOS晶体管NM1衬偏效应等效跨导,Vg3为第三NMOS晶体管NM3的栅极电压,gm3为第三NMOS晶体管NM3的跨导,ro3为第三NMOS晶体管NM3的沟道电阻,设输入信号Vin为0,又Vg3=Vout,根据图5小信号模型电路的KCL方程可得:The function of the gm-boost circuit is analyzed below, that is, considering the functions of the third PMOS transistor PM3 and the fourth PMOS transistor PM4, the equivalent circuit of the present invention is shown in FIG. 4 , and the small signal model of the circuit in FIG. 4 is shown in FIG. 5 . The test signal V t is added, the test current is I t , r o1 is the channel resistance of the first NMOS transistor NM1, g mb1 is the equivalent transconductance of the first NMOS transistor NM1 lining bias effect, V g3 is the third NMOS transistor NM3 Gate voltage, g m3 is the transconductance of the third NMOS transistor NM3, r o3 is the channel resistance of the third NMOS transistor NM3, assuming that the input signal Vin is 0, and V g3 =V out , according to the small signal model circuit in Figure 5 The KCL equation can be obtained:

VV gg 33 RR oo uu tt == gg mm 11 VV tt ++ gg mm bb 11 VV tt ++ VV tt -- VV gg 33 rr oo 11 -- -- -- (( 44 ))

II tt == VV gg 33 RR oo uu tt ++ VV tt RR sthe s ++ VV tt rr oo 33 ++ gg mm 33 VV gg 33 -- -- -- (( 55 ))

因为Rout远小于ro1由式(4)和(5)得从第一NMOS晶体管NM1源极看进去的电阻Rt为:Because R out is much smaller than r o1 , the resistance R t seen from the source of the first NMOS transistor NM1 is obtained from equations (4) and (5):

RR tt == VV tt II tt ≈≈ 11 (( gg mm 11 ++ gg mm bb 11 )) gg mm 33 RR oo uu tt -- -- -- (( 66 ))

由此可见,引入gm-boost电路后从第一NMOS晶体管NM1源极看进去的阻抗比单纯的只有源极退化电阻(如图3所示)的情况下要小gm3*Rout。因此,由源极跟随器电路特性可得知,第一NMOS晶体管NM1栅极到源极的增益Ag-s为:It can be seen that, after introducing the gm-boost circuit, the impedance seen from the source of the first NMOS transistor NM1 is smaller than g m3 *R out in the case of only the source degeneration resistance (as shown in FIG. 3 ). Therefore, it can be known from the characteristics of the source follower circuit that the gain A gs from the gate to the source of the first NMOS transistor NM1 is:

AA gg -- sthe s == gg mm 33 RR oo uu tt gg mm 11 RR sthe s 11 ++ gg mm 33 RR oo uu tt gg mm 11 RR sthe s -- -- -- (( 77 ))

由典型的源极跟随器电路特性可易知,加入gm-boost电路后电路输入等效跨导增加了约gm3*Rout倍,因此电路的线性度得到提高。It can be easily known from the characteristics of a typical source follower circuit that after adding the gm-boost circuit, the input equivalent transconductance of the circuit increases by about g m3 *R out times, so the linearity of the circuit is improved.

进一步作为优选的实施方式,所述增益控制电路包括第三NMOS晶体管NM3和第四NMOS晶体管NM4,所述第三NMOS晶体管NM3的栅极和第四NMOS晶体管NM4的栅极均连接至增益控制电压端,所述第三NMOS晶体管NM3的源极和第四NMOS晶体管NM4的源极均连接至第一NMOS晶体管NM1的源极,所述第三NMOS晶体管NM3的漏极和第四NMOS晶体管NM4的漏极均连接至第二NMOS晶体管NM2的源极。Further as a preferred embodiment, the gain control circuit includes a third NMOS transistor NM3 and a fourth NMOS transistor NM4, the gate of the third NMOS transistor NM3 and the gate of the fourth NMOS transistor NM4 are both connected to the gain control voltage terminal, the source of the third NMOS transistor NM3 and the source of the fourth NMOS transistor NM4 are connected to the source of the first NMOS transistor NM1, the drain of the third NMOS transistor NM3 and the fourth NMOS transistor NM4 The drains are both connected to the source of the second NMOS transistor NM2.

其中,1/Rs是第三NMOS晶体管NM3和第四NMOS晶体管NM4等效导纳之和的2倍,即有:Among them, 1/Rs is twice the sum of the equivalent admittances of the third NMOS transistor NM3 and the fourth NMOS transistor NM4, namely:

11 RR sthe s == GG sthe s == 22 μμ nno ,, 33 CC oo xx ,, 33 (( WW LL )) 33 (( VV gg sthe s 33 -- VV TT Hh 33 )) ++ 22 μμ nno ,, 44 CC oo xx ,, 44 (( WW LL )) 44 (( VV gg sthe s 44 -- VV TT Hh 44 )) -- -- -- (( 88 ))

GG sthe s ,, 33 == μμ nno ,, 33 CC oo xx ,, 33 (( WW LL )) 33 (( VV gg sthe s 33 -- VV TT Hh 33 )) -- -- -- (( 99 ))

GG sthe s ,, 44 == μμ nno ,, 44 CC oo xx ,, 44 (( WW LL )) 44 (( VV gg sthe s 44 -- VV TT Hh 44 )) -- -- -- (( 1010 ))

其中μn,3和μn,4分别为第三NMOS晶体管NM3和第四NMOS晶体管NM4中的载流子迁移率,Cox,3和Cox,4分别为第三NMOS晶体管NM3和第四NMOS晶体管NM4的沟道和栅极形成的单位面积电容,分别为第三NMOS晶体管NM3和第四NMOS晶体管NM4的宽长比,Vgs3和Vgs4分别是第三NMOS晶体管NM3和第四NMOS晶体管NM4的栅-源电压,VTH3和VTH4分别为第三NMOS晶体管NM3和第四NMOS晶体管NM4的阈值电压。Vds5和Vds6分别是第五NMOS晶体管NM5和第六NMOS晶体管NM6的栅漏电压,可以将VGA的增益进一步写成:Where μ n,3 and μ n,4 are the carrier mobility in the third NMOS transistor NM3 and the fourth NMOS transistor NM4 respectively, C ox,3 and C ox,4 are respectively the third NMOS transistor NM3 and the fourth NMOS transistor NM4 The capacitance per unit area formed by the channel and the gate of the NMOS transistor NM4, and are respectively the width-to-length ratios of the third NMOS transistor NM3 and the fourth NMOS transistor NM4, V gs3 and V gs4 are respectively the gate-source voltages of the third NMOS transistor NM3 and the fourth NMOS transistor NM4, and V TH3 and V TH4 are respectively the The threshold voltages of the third NMOS transistor NM3 and the fourth NMOS transistor NM4. V ds5 and V ds6 are the gate-drain voltages of the fifth NMOS transistor NM5 and the sixth NMOS transistor NM6 respectively, and the gain of the VGA can be further written as:

A=A3+A4 (11)A=A3+A4 (11)

AA 33 == -- 22 μμ nno ,, 33 CC oo xx ,, 33 (( WW LL )) 33 (( VV gg sthe s 33 -- VV TT Hh 33 )) ** RR oo uu tt -- -- -- (( 1212 ))

AA 44 == -- 22 μμ nno ,, 44 CC oo xx ,, 44 (( WW LL )) 44 (( VV gg sthe s 44 -- VV TT Hh 44 )) ** RR oo uu tt -- -- -- (( 1313 ))

Vgs3=Vgs4=VC-Vds5=VC-Vds6 (14)V gs3 =V gs4 =VC-V ds5 =VC-V ds6 (14)

设x=VC,b1=-Vds5-VTH3,b2=-Vds5-VTH4,则VGA的增益表达式为:Let x=VC, b 1 =-V ds5 -V TH3 , b 2 =-V ds5 -V TH4 , then the gain expression of VGA is:

A=A3+A4 (15)A=A3+A4 (15)

A3=a1(x+b1) (16)A3=a 1 (x+b 1 ) (16)

A4=a2(x+b2) (17)A4=a 2 (x+b 2 ) (17)

当采用三级这种VGA结构进行级联,通过合理选择第三NMOS晶体管NM3和第四NMOS晶体管NM4的类型以及长宽比能够使得整个VGA总的增益表达式近似等于Aall。又由数学公式:When the three-level VGA structure is used for cascading, the total gain expression of the entire VGA can be approximately equal to A all by properly selecting the types and aspect ratios of the third NMOS transistor NM3 and the fourth NMOS transistor NM4 . And by the mathematical formula:

an(x+b)n≈annnex+b-n(当x≈n-b时成立)得:a n (x+b) n ≈a n n n e x+bn (established when x≈nb) gets:

Aall≈27a3ex+b-3 (18)A all ≈27a 3 e x+b-3 (18)

由式(18)可知,VGA增益为Aall,控制电压为x,根据该特性得以实现增益与控制电压的指数关系(dB线性)特性。其中 It can be seen from formula (18) that the VGA gain is A all and the control voltage is x. According to this characteristic, the exponential relationship between the gain and the control voltage (dB linearity) can be realized. in

进一步作为优选的实施方式,所述电流源电路包括第五NMOS晶体管NM5和第六NMOS晶体管NM6,所述第五NMOS晶体管NM5的栅极和第六NMOS晶体管NM6的栅极均连接至偏置电压端,所述第五NMOS晶体管NM5的源极和第六NMOS晶体管NM6的源极均与地连接,所述第五NMOS晶体管NM5的漏极分别与第一NMOS晶体管NM1的源极、第三PMOS晶体管PM3的漏极、第三NMOS晶体管NM3的源极和第四NMOS晶体管NM4的源极相连接,所述第六NMOS晶体管NM6的漏极分别与第二NMOS晶体管NM2的源极、第四PMOS晶体管PM4的漏极、第三NMOS晶体管NM3的漏极和第四NMOS晶体管NM4的漏极相连接。Further as a preferred embodiment, the current source circuit includes a fifth NMOS transistor NM5 and a sixth NMOS transistor NM6, the gates of the fifth NMOS transistor NM5 and the sixth NMOS transistor NM6 are both connected to the bias voltage terminal, the source of the fifth NMOS transistor NM5 and the source of the sixth NMOS transistor NM6 are both connected to the ground, and the drain of the fifth NMOS transistor NM5 is connected to the source of the first NMOS transistor NM1 and the third PMOS transistor NM1 respectively. The drain of the transistor PM3, the source of the third NMOS transistor NM3 and the source of the fourth NMOS transistor NM4 are connected, and the drain of the sixth NMOS transistor NM6 is respectively connected to the source of the second NMOS transistor NM2 and the fourth PMOS transistor NM2. The drain of the transistor PM4, the drain of the third NMOS transistor NM3, and the drain of the fourth NMOS transistor NM4 are connected.

其中,把有源负载分离出来进行独立分析,如图6所示,有源负载电路的小信号模型如图7所示。其中,ro1、ro2、ro5和ro6分别为第一PMOS晶体管PM1、第二PMOS晶体管PM2、第五PMOS晶体管PM5和第六PMOS晶体管PM6的沟道电阻,Vg5和Vg6分别为第五PMOS晶体管PM5和第六PMOS晶体管PM6的栅极电压,gm为第五PMOS晶体管PM5和第六PMOS晶体管PM6的跨导。对上述电路进行s域分析有:Among them, the active load is separated for independent analysis, as shown in Figure 6, and the small signal model of the active load circuit is shown in Figure 7. Among them, r o1 , r o2 , r o5 and r o6 are the channel resistances of the first PMOS transistor PM1, the second PMOS transistor PM2, the fifth PMOS transistor PM5 and the sixth PMOS transistor PM6 respectively, and V g5 and V g6 are respectively The gate voltage of the fifth PMOS transistor PM5 and the sixth PMOS transistor PM6 , gm is the transconductance of the fifth PMOS transistor PM5 and the sixth PMOS transistor PM6. The s-domain analysis of the above circuit has:

gg mm VV gg 55 ++ VV xx ++ rr oo 11 // // rr oo 55 // // RR 11 ++ VV xx ++ RR 44 ++ 11 // sthe s CC 22 == II xx -- -- -- (( 1919 ))

-- gg mm VV gg 66 -- VV xx -- rr oo 22 // // rr oo 66 // // RR 22 -- VV xx -- RR 33 ++ 11 // sthe s CC 11 == II xx -- -- -- (( 2020 ))

VV gg 55 == RR 33 VV xx -- RR 33 ++ 11 // sthe s CC 11 -- -- -- (( 21twenty one ))

VV gg 66 == RR 44 VV xx -- RR 44 ++ 11 // sthe s CC 22 -- -- -- (( 22twenty two ))

设R1=R2=R0,C1=C2=C,R3=R4=R,ro1=ro2,ro5=ro6。由于电路的对称性,由式(19)~(22)可得:Let R1=R2=R0, C1=C2=C, R3=R4=R, r o1 =r o2 , r o5 =r o6 . Due to the symmetry of the circuit, it can be obtained from formulas (19)-(22):

ZZ == VV xx ++ -- VV xx -- 22 II xx == (( rr oo 11 ,, 22 // // rr oo 55 ,, 66 // // RR 00 )) (( 11 ++ sthe s RR CC )) 11 ++ sthe s [[ RR CC ++ (( rr oo 11 ,, 22 // // rr oo 55 ,, 66 // // RR 00 )) CC -- gg mm (( rr oo 11 ,, 22 // // rr oo 55 ,, 66 // // RR 00 )) RR CC ]] -- -- -- (( 23twenty three ))

由式(23)可知,有源负载会引入零点和极点,其中我们关注的零点为:From formula (23), it can be known that active loads will introduce zeros and poles, among which the zeros we focus on are:

ωω zz == 11 RR CC -- -- -- (( 24twenty four ))

只要调配得当,新引入的零点就会抵消主极点,使增益增加,带宽得以扩展。Properly tuned, the newly introduced zero cancels out the dominant pole, increasing gain and extending bandwidth.

参考图2,本发明实施例中,能采用三个本发明可变增益放大器进行级联,三个可变增益放大器结构相同但器件参数不相同,采用180nm CMOS工艺设计,直接耦合构造出VGA输出与输入之间的dB线性近似关系。第一可变增益放大器的输出端通过第二可变增益放大器进而连接至第三可变增益放大器的输入端,这样第二可变增益放大器将第一可变增益放大器的输出信号进行放大,然后第三可变增益放大器又将第二可变增益放大器的输出信号放大,三个可变增益放大器连接同一个增益控制电压端,这样通过三个可变增益放大器,使得整个可变增益放大器具有较高的增益。Referring to Fig. 2, in the embodiment of the present invention, three variable gain amplifiers of the present invention can be used for cascading. The three variable gain amplifiers have the same structure but different device parameters. They are designed in a 180nm CMOS process and directly coupled to form a VGA output Linear approximation in dB with input. The output terminal of the first variable gain amplifier is further connected to the input terminal of the third variable gain amplifier through the second variable gain amplifier, so that the second variable gain amplifier amplifies the output signal of the first variable gain amplifier, and then The third variable gain amplifier amplifies the output signal of the second variable gain amplifier, and the three variable gain amplifiers are connected to the same gain control voltage terminal, so that the whole variable gain amplifier has a relatively high frequency through the three variable gain amplifiers. high gain.

参考图8和图9,本实施例中对电路进行后仿真,结果显示,最高增益为67dB,最小-3dB带宽为125MHz(如图8所示)。不同的控制电压VC可以改变VGA的增益(如图9所示),控制电压的VC与VGA的增益有较宽的dB线性范围:-25dB~37dB,即62dB(如图10所示)。dB线性曲线的拟合与dB线性误差如图11和图12所示,在dB线性范围-25dB~37dB中,dB线性误差小于±1dB。Referring to FIG. 8 and FIG. 9 , the post-simulation of the circuit in this embodiment shows that the highest gain is 67dB, and the minimum -3dB bandwidth is 125MHz (as shown in FIG. 8 ). Different control voltage VC can change the gain of VGA (as shown in Figure 9). The VC of the control voltage and the gain of VGA have a wider dB linear range: -25dB to 37dB, that is, 62dB (as shown in Figure 10). The fitting of the dB linear curve and the dB linear error are shown in Figure 11 and Figure 12. In the dB linear range -25dB to 37dB, the dB linear error is less than ±1dB.

从上述内容可知,本发明一种新型低复杂度宽带可变增益放大器不需要指数发生电路即可实现输出与输入的dB线性关系,其通过gm-boost电路有效增强VGA的等效输入跨导,使得VGA能具有较高的线性度和较宽的dB线性范围,同时通过有源负载电路能在不增加VGA功耗的前提下,大大扩展VGA的带宽。As can be seen from the foregoing, a novel low-complexity broadband variable gain amplifier of the present invention can realize the dB linear relationship between the output and the input without an exponential generating circuit, and effectively enhances the equivalent input transconductance of the VGA through the gm-boost circuit, The VGA can have higher linearity and a wider dB linear range, and at the same time, the bandwidth of the VGA can be greatly expanded without increasing the power consumption of the VGA through an active load circuit.

以上是对本发明的较佳实施进行了具体说明,但本发明创造并不限于所述实施例,熟悉本领域的技术人员在不违背本发明精神的前提下还可做作出种种的等同变形或替换,这些等同的变形或替换均包含在本申请权利要求所限定的范围内。The above is a specific description of the preferred implementation of the present invention, but the invention is not limited to the described embodiments, and those skilled in the art can also make various equivalent deformations or replacements without violating the spirit of the present invention. , these equivalent modifications or replacements are all within the scope defined by the claims of the present application.

Claims (6)

1.一种新型低复杂度宽带可变增益放大器,其特征在于:包括有源负载电路、电流源电路、差分输入电路、gm-boost电路和增益控制电路,所述有源负载电路分别与gm-boost电路和差分输入电路连接,所述电流源电路分别与差分输入电路、gm-boost电路和增益控制电路连接。1. A novel low-complexity broadband variable gain amplifier is characterized in that: it comprises an active load circuit, a current source circuit, a differential input circuit, a gm-boost circuit and a gain control circuit, and the active load circuit is respectively connected to gm - the boost circuit is connected to the differential input circuit, and the current source circuit is respectively connected to the differential input circuit, the gm-boost circuit and the gain control circuit. 2.根据权利要求1所述的一种新型低复杂度宽带可变增益放大器,其特征在于:所述有源负载电路包括第一PMOS晶体管、第二PMOS晶体管、第五PMOS晶体管、第六PMOS晶体管、第一电阻、第二电阻、第三电阻、第四电阻、第一电容和第二电容,所述第一PMOS晶体管的源极、第二PMOS晶体管的源极、第五PMOS晶体管的源极和第六PMOS晶体管的源极均连接至电源端,所述第五PMOS晶体管的栅极通过第三电阻连接至第一PMOS晶体管的栅极,所述第六PMOS晶体管的栅极通过第四电阻连接至第二PMOS晶体管的栅极,所述第一PMOS晶体管的栅极和第二PMOS晶体管的栅极相连接,所述第一PMOS晶体管的栅极通过第一电阻连接至第一PMOS晶体管的漏极,所述第二PMOS晶体管的栅极通过第二电阻连接至第二PMOS晶体管的漏极,所述第五PMOS晶体管的栅极通过第一电容连接至第二PMOS晶体管的漏极,所述第六PMOS晶体管的栅极通过第二电容连接至第一PMOS晶体管的漏极,所述第一PMOS晶体管的漏极分别与第五PMOS晶体管的漏极、差分输入电路和gm-boost电路连接,所述第二PMOS晶体管的漏极分别与第六PMOS晶体管的漏极、差分输入电路和gm-boost电路连接,所述第一PMOS晶体管的漏极连接至负极输出端,所述第二PMOS晶体管的漏极连接至正极输出端。2. A novel low-complexity broadband variable gain amplifier according to claim 1, wherein said active load circuit comprises a first PMOS transistor, a second PMOS transistor, a fifth PMOS transistor, a sixth PMOS transistor Transistors, first resistors, second resistors, third resistors, fourth resistors, first capacitors, and second capacitors, the source of the first PMOS transistor, the source of the second PMOS transistor, and the source of the fifth PMOS transistor The gate of the fifth PMOS transistor and the source of the sixth PMOS transistor are connected to the power supply terminal, the gate of the fifth PMOS transistor is connected to the gate of the first PMOS transistor through the third resistor, and the gate of the sixth PMOS transistor is connected to the gate of the sixth PMOS transistor through the fourth resistor. The resistor is connected to the gate of the second PMOS transistor, the gate of the first PMOS transistor is connected to the gate of the second PMOS transistor, and the gate of the first PMOS transistor is connected to the first PMOS transistor through a first resistor the drain of the second PMOS transistor, the gate of the second PMOS transistor is connected to the drain of the second PMOS transistor through a second resistor, the gate of the fifth PMOS transistor is connected to the drain of the second PMOS transistor through a first capacitor, The gate of the sixth PMOS transistor is connected to the drain of the first PMOS transistor through the second capacitor, and the drain of the first PMOS transistor is respectively connected to the drain of the fifth PMOS transistor, the differential input circuit and the gm-boost circuit connected, the drain of the second PMOS transistor is respectively connected to the drain of the sixth PMOS transistor, the differential input circuit and the gm-boost circuit, the drain of the first PMOS transistor is connected to the negative output terminal, and the second The drain of the PMOS transistor is connected to the positive output. 3.根据权利要求2所述的一种新型低复杂度宽带可变增益放大器,其特征在于: 差分输入电路包括第一NMOS晶体管和第二NMOS晶体管,所述第一NMOS晶体管的漏极与第一PMOS晶体管的漏极相连接,所述第一NMOS晶体管的源极分别与gm-boost电路、增益控制电路和电流源电路相连接,所述第二NMOS晶体管的漏极与第二PMOS晶体管的漏极相连接,所述第二NMOS晶体管的源极分别与gm-boost电路、增益控制电路和电流源电路相连接,所述第一NMOS晶体管的栅极连接至正极输入端,所述第二NMOS晶体管的栅极连接至负极输入端。3. A novel low-complexity broadband variable gain amplifier according to claim 2, characterized in that: the differential input circuit comprises a first NMOS transistor and a second NMOS transistor, and the drain of the first NMOS transistor is connected to the second NMOS transistor. The drain of a PMOS transistor is connected, the source of the first NMOS transistor is connected with the gm-boost circuit, the gain control circuit and the current source circuit respectively, the drain of the second NMOS transistor is connected with the second PMOS transistor The drain is connected, the source of the second NMOS transistor is connected to the gm-boost circuit, the gain control circuit and the current source circuit respectively, the gate of the first NMOS transistor is connected to the positive input terminal, and the second NMOS transistor is connected to the positive input terminal. The gate of the NMOS transistor is connected to the negative input. 4.根据权利要求3所述的一种新型低复杂度宽带可变增益放大器,其特征在于:所述gm-boost电路包括第三PMOS晶体管和第四PMOS晶体管,所述第三PMOS晶体管的源极和第四PMOS晶体管的源极均连接至电源端,所述第三PMOS晶体管的栅极分别与第一NMOS晶体管的漏极和第一PMOS晶体管的漏极相连接,所述第三PMOS晶体管的漏极与第一NMOS晶体管的源极连接,所述第四PMOS晶体管的栅极分别与第二NMOS晶体管的漏极和第二PMOS晶体管的漏极相连接,所述第四PMOS晶体管的漏极与第二NMOS晶体管的源极连接。4. a kind of novel low-complexity broadband variable gain amplifier according to claim 3, is characterized in that: described gm-boost circuit comprises the 3rd PMOS transistor and the 4th PMOS transistor, the source of described 3rd PMOS transistor Both the pole and the source of the fourth PMOS transistor are connected to the power supply terminal, the gate of the third PMOS transistor is connected to the drain of the first NMOS transistor and the drain of the first PMOS transistor respectively, and the drain of the third PMOS transistor The drain of the first NMOS transistor is connected to the source, the gate of the fourth PMOS transistor is respectively connected to the drain of the second NMOS transistor and the drain of the second PMOS transistor, and the drain of the fourth PMOS transistor The pole is connected to the source of the second NMOS transistor. 5.根据权利要求4所述的一种新型低复杂度宽带可变增益放大器,其特征在于:所述增益控制电路包括第三NMOS晶体管和第四NMOS晶体管,所述第三NMOS晶体管的栅极和第四NMOS晶体管的栅极均连接至增益控制电压端,所述第三NMOS晶体管的源极和第四NMOS晶体管的源极均连接至第一NMOS晶体管的源极,所述第三NMOS晶体管的漏极和第四NMOS晶体管的漏极均连接至第二NMOS晶体管的源极。5. a kind of novel low-complexity broadband variable gain amplifier according to claim 4, is characterized in that: described gain control circuit comprises the 3rd NMOS transistor and the 4th NMOS transistor, the gate of described 3rd NMOS transistor and the gate of the fourth NMOS transistor are connected to the gain control voltage terminal, the source of the third NMOS transistor and the source of the fourth NMOS transistor are connected to the source of the first NMOS transistor, and the third NMOS transistor Both the drain of the fourth NMOS transistor and the drain of the fourth NMOS transistor are connected to the source of the second NMOS transistor. 6.根据权利要求5所述的一种新型低复杂度宽带可变增益放大器,其特征在于:所述电流源电路包括第五NMOS晶体管和第六NMOS晶体管,所述第五NMOS晶体管的栅极和第六NMOS晶体管的栅极均连接至偏置电压端,所述第五NMOS晶体管的源极和第六NMOS晶体管的源极均与地连接,所述第五NMOS晶体管的漏极分别与第一NMOS晶体管的源极、第三PMOS晶体管的漏极、第三NMOS晶体管的源极和第四NMOS晶体管的源极相连接,所述第六NMOS晶体管的漏极分别与第二NMOS晶体管的源极、第四PMOS晶体管的漏极、第三NMOS晶体管的漏极和第四NMOS晶体管的漏极相连接。6. A novel low-complexity wideband variable gain amplifier according to claim 5, characterized in that: said current source circuit comprises a fifth NMOS transistor and a sixth NMOS transistor, and the gate of said fifth NMOS transistor and the gates of the sixth NMOS transistor are connected to the bias voltage terminal, the source of the fifth NMOS transistor and the source of the sixth NMOS transistor are connected to the ground, and the drains of the fifth NMOS transistor are respectively connected to the first The source of an NMOS transistor, the drain of the third PMOS transistor, the source of the third NMOS transistor and the source of the fourth NMOS transistor are connected, and the drain of the sixth NMOS transistor is connected to the source of the second NMOS transistor respectively. electrode, the drain of the fourth PMOS transistor, the drain of the third NMOS transistor and the drain of the fourth NMOS transistor are connected.
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Application publication date: 20161026