CN106057667A - Film layer pattern manufacturing method, substrate manufacturing method, substrate and display device - Google Patents
Film layer pattern manufacturing method, substrate manufacturing method, substrate and display device Download PDFInfo
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- CN106057667A CN106057667A CN201610525835.8A CN201610525835A CN106057667A CN 106057667 A CN106057667 A CN 106057667A CN 201610525835 A CN201610525835 A CN 201610525835A CN 106057667 A CN106057667 A CN 106057667A
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- film layer
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- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 65
- 238000005530 etching Methods 0.000 claims abstract description 38
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 26
- 238000001039 wet etching Methods 0.000 claims abstract description 23
- 238000001259 photo etching Methods 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 claims description 23
- 230000000903 blocking effect Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 5
- 238000004026 adhesive bonding Methods 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 16
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract 3
- 230000001070 adhesive effect Effects 0.000 abstract 3
- 230000035515 penetration Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 165
- 229910001257 Nb alloy Inorganic materials 0.000 description 8
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- IHBCFWWEZXPPLG-UHFFFAOYSA-N [Ca].[Zn] Chemical compound [Ca].[Zn] IHBCFWWEZXPPLG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010141 design making Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- -1 indium stannum oxygen Compound Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention relates to the field of display technology, and particularly to a film layer manufacturing method, a substrate manufacturing method, a substrate and a display device, thereby settling problems of wire breakage and wire width deviation of an electrode pattern formed through wet etching in prior art. Particularly, a first adhesive compensation film is manufactured between a first film layer and a photoresist film layer. Because adhesiveness between the adhesive compensation film layer and the first film layer and adhesiveness between the adhesive compensation film layer and the photoresist film layer is larger than that between the first film layer and the photoresist film layer, relatively high adhesion degree between adjacent film layers and no gaps are realized. Therefore, wire breaking of the pattern of the first film layer caused by penetration of etching liquid in a lateral direction is prevented. Furthermore, approximately same etching degree in the etching process can be ensured, thereby preventing proximity dimension deviation of the formed film layer pattern caused by different etching degree.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to the manufacture method of the manufacture method of a kind of film pattern, substrate
And substrate, display device.
Background technology
Tft liquid crystal show industry, the widely used coplanar conversion IPS pattern of Curved screen product, wherein, IPS's
Electrode mainly uses molybdenum niobium alloy material.Existing problems in process of production: gluing between molybdenum niobium alloy film layer and PR adhesive film
Attached property is poor, and molybdenum niobium alloy film layer is when carrying out wet etching, and etching liquid likely dissolves this from lateral infiltration and should not etch away
Molybdenum niobium alloy, the electrode pattern resulted in breaks, thus affects product yield.Simultaneously because etching liquid penetrates into degree
Difference, the degree causing molybdenum niobium alloy film layer to be etched away is different, thus the electrode live width fluctuation formed after being easily caused etching
Bigger problem, has a strong impact on product display quality.
Summary of the invention
The embodiment of the present invention provides the manufacture method of a kind of film pattern, the manufacture method of substrate and substrate, display device,
In order to solve prior art exists the problem that electrode pattern generation is broken and live width exists deviation of wet etching formation.
The embodiment of the present invention is by the following technical solutions:
A kind of manufacture method of film pattern, described method includes:
Sequentially form the first film layer on substrate, viscosity compensates film layer and photoresist film layer, and wherein, described viscosity is mended
Repay the adhesiveness between film layer and described first film layer, and described viscosity compensates gluing between film layer and described photoresist film layer
Attached property, is all higher than the adhesiveness between described first film layer and described photoresist film layer；
Described photoresist film layer is patterned technique, the photoetching agent pattern needed for formation；
Utilize blocking of described photoetching agent pattern, described viscosity is compensated film layer and described first film layer performs etching technique
Viscosity needed for formation compensates pattern and the pattern of described first film layer of film layer.
Alternatively, utilize blocking of described photoetching agent pattern, described viscosity is compensated film layer and described first film layer is carried out
Etching technics forms described viscosity and compensates pattern and the pattern of described first film layer of film layer, specifically includes:
Utilize blocking of described photoetching agent pattern, described viscosity compensation film layer is carried out wet-etching technique for the first time and is formed required
Viscosity compensate film layer pattern；
Utilize described viscosity to compensate the blocking of pattern of film layer, described first film layer is carried out second time wet-etching technique and is formed
The pattern of the first required film layer.
Alternatively, utilize blocking of described photoetching agent pattern, described viscosity is compensated film layer and described first film layer is carried out
Etching technics forms described viscosity and compensates pattern and the pattern of described first film layer of film layer, specifically includes:
Utilize blocking of described photoetching agent pattern, described viscosity is compensated film layer and described first film layer carries out a wet etching
Technique forms described viscosity and compensates pattern and the pattern of described first film layer of film layer.
Alternatively, after the viscosity needed for being formed compensates the pattern of film layer and the pattern of described first film layer, described side
Method also includes:
Peel off described photoetching agent pattern and the pattern of described viscosity compensation film layer.
Alternatively, the material of described first film layer is metal simple-substance or alloy；It is indium that described viscosity compensates the material of film layer
Tin-oxide.
Alternatively, described viscosity compensates the thickness range of film layer is 10nm-50nm.
The manufacture method of a kind of substrate, including the manufacture method of described film pattern.
A kind of substrate, including the film pattern utilizing the manufacture method of described film pattern to be made.
Alternatively, described substrate is display base plate or touch base plate.
Alternatively, when described substrate is display base plate, described film pattern is pixel electrode.
A kind of display device, including described substrate.
The present invention has the beneficial effect that:
Make one layer of viscosity in the first film layer and compensate film layer, owing to viscosity compensates gluing between film layer and the first film layer
Adhesiveness between attached property, and viscosity compensation film layer and photoresist film layer, is all higher than between the first film layer and photoresist film layer
Adhesiveness, thus, it is preferable that the first film layer and viscosity compensate the laminating degree between film layer, does not haves gap, meanwhile, photoetching
It is also preferable that adhesive film and viscosity compensate the laminating degree between film layer, so, prevents etching liquid from causing first from lateral infiltration
The pattern of film layer produces broken string, moreover, it is also possible to ensure that etching degree in etching process is close to consistent, thus avoid due to
The film pattern that etching degree is different and results in close on size generation deviation；In a word, etching is improved by the program
The accuracy of the film pattern formed, and then the quality of improving product.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in embodiment being described below required for make
Accompanying drawing briefly introduce, it should be apparent that, below describe in accompanying drawing be only some embodiments of the present invention, for this
From the point of view of the those of ordinary skill in field, on the premise of not paying creative work, it is also possible to obtain it according to these accompanying drawings
His accompanying drawing.
The schematic flow sheet of the manufacture method of the film pattern that Fig. 1 provides for the embodiment of the present invention；
The fabrication processing figure of the film pattern that Fig. 2 (a)-Fig. 2 (c) provides for the embodiment of the present invention；
Fig. 3 (a)-Fig. 3 (b) carries out the schematic diagram of twice wet-etching technique for the employing mode one that the embodiment of the present invention provides；
Fig. 4 is the schematic diagram of the film pattern using schematic design making of the prior art.
Detailed description of the invention
In order to make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing the present invention made into
One step ground describes in detail, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole enforcement
Example.Based on the embodiment in the present invention, those of ordinary skill in the art are obtained under not making creative work premise
All other embodiments, broadly fall into the scope of protection of the invention.
Below by specific embodiment, technical scheme involved in the present invention is described in detail, the present invention include but
It is not limited to following example.
As it is shown in figure 1, the schematic flow sheet of manufacture method of the film pattern provided for the embodiment of the present invention, the method master
Comprise the following steps:
Step 11: sequentially form the first film layer on substrate, viscosity compensates film layer and photoresist film layer, wherein, viscous
Property compensate the adhesiveness between film layer and the first film layer, and viscosity compensates the adhesion between film layer and described photoresist film layer
Property, it is all higher than the adhesiveness between described first film layer and described photoresist film layer.
Specifically, the fabrication processing figure with reference to the film pattern shown in Fig. 2 (a) understands, first, it is provided that a substrate
21, then, on substrate 21, sequentially form the first film layer 22, viscosity compensation film layer 23 and photoresist film layer 24.Wherein, film
The technique that layer is formed can use existing depositing operation, such as: chemical gaseous phase deposition or physical vapour deposition (PVD)；Or, directly adopt
Formed by the mode of coating.
Wherein, the material of the first film layer 22 can be metal simple-substance or metal alloy, such as: molybdenum titanium alloy, titanium simple substance, molybdenum
Niobium alloy etc., or other non-metallic materials.The material that viscosity compensates film layer is relevant to the material of the first film layer and photoresist,
May finally need to be stripped owing to viscosity compensates film layer, therefore, viscosity compensates film layer and the first film layer and photoresist film
Adhesiveness between Ceng becomes the key determining that viscosity compensates film layer material.For example, it is possible to choose indium-zinc oxide, the oxidation of calcium zinc
One or more combinations in thing, zinc oxide.Preferably, for for the first film layer that molybdenum niobium alloy is formed, with indium stannum oxygen
Compound ITO is optimal material.
Step 12: photoresist film layer is patterned technique, the photoetching agent pattern needed for formation.
Specifically, with reference to shown in Fig. 2 (b), utilize corresponding mask plate, photoresist film layer 24 is carried out mask, expose, aobvious
Shadows etc. operate, it is achieved patterning processes, the photoetching agent pattern 25 needed for formation.
Step 13: utilize blocking of photoetching agent pattern, compensates film layer to viscosity and the first film layer performs etching technique and formed
Required viscosity compensates pattern and the pattern of the first film layer of film layer.
Specifically, with reference to shown in Fig. 2 (c), utilize blocking of photoetching agent pattern 25, viscosity is compensated film layer 23 and the first film
Layer 22 performs etching technique and forms pattern 26 and the pattern 27 of the first film layer of required viscosity compensation film layer.
By above technical scheme, make one layer of viscosity in the first film layer and compensate film layer, owing to viscosity compensates film layer
And the adhesiveness between the adhesiveness between the first film layer, and viscosity compensation film layer and photoresist film layer, is all higher than the first film
Adhesiveness between layer and photoresist film layer, thus, it is preferable that the first film layer and viscosity compensate the laminating degree between film layer, will not
Gap occur, meanwhile, it is also preferable that photoresist film layer and viscosity compensate the laminating degree between film layer, so, prevent etching liquid from
Laterally penetrate into and cause the pattern of the first film layer to produce broken string, moreover, it is also possible to ensure that in etching process, etching degree is near
Consistent, thus avoid the film pattern resulted in owing to etching degree is different close on size generation deviation；In a word, logical
Cross the program and improve the accuracy of the film pattern that etching is formed, and then the quality of improving product.
In embodiments of the present invention, the realization of step 13 can have a following two ways:
Mode one: twice wet etching
Specifically, with reference to shown in Fig. 3 (a)-Fig. 3 (b)；
First, utilize blocking of photoetching agent pattern 25, viscosity is compensated film layer 23 and carries out the institute of wet-etching technique formation for the first time
The viscosity needed compensates the pattern 26 of film layer.
Then, utilize viscosity to compensate the blocking of pattern 26 of film layer, the first film layer 22 is carried out second time wet-etching technique shape
The pattern 27 of the first film layer needed for one-tenth.
According to the structure shown in Fig. 3 (b), the pattern of the first film layer of formation is complete, does not occur owing to carving
The erosion seepage of liquid and the breakage problem that causes.The viscosity being additionally, since first wet etching compensates film layer so that the viscosity of formation compensates film
First film layer is blocked and protects by the pattern of layer, when the first film layer is carried out wet etching, has well controlled the model of wet etching
The problem enclosing and avoiding the seepage of etching liquid and cause the pattern of the first film layer that unnecessary fracture occurs.
Understand it addition, combine Fig. 3 (b), after carrying out first time wet-etching technique, owing to photoresist film layer compensates with viscosity
The adhesiveness of film layer is higher, thus the unilateral key size deviation of the pattern of the viscosity compensation film layer formed and photoetching agent pattern is only
For 0.1-0.2 μm, and the pattern that viscosity compensates film layer is the most homogeneous, close to the pattern in ideal.Carrying out second time wet etching
During technique, the adhesiveness compensated between film layer and the first film layer due to viscosity is higher, and viscosity compensates the pattern of film layer as screening
Gear, thus, the unilateral key size deviation of the pattern that the pattern of the first film layer of formation compensates film layer with adjacent viscosity is only
0.05-0.1μm.And first the pattern of film layer the most homogeneous.Finally, the pattern of the first film layer is crucial with the one side of photoetching agent pattern
Dimensional discrepancy is 0.15-0.3 μm, and photoetching agent pattern 42 direct compared to the film pattern of the prior art 41 shown in Fig. 4
For unilateral key size deviation during contact is 0.3-0.6 μm, the film pattern that the scheme involved by the application is formed
Size fluctuation is less, and the most homogeneous.It should be noted that key size deviation refers to the same side of two the film layers fitted
Horizontal range between border A and boundary B in horizontal range between border, i.e. Fig. 4.
Wherein, the etching liquid that wet-etching technique is used for the first time only can dissolve the material of viscosity compensation film layer, such as: can
Thinking hydrochloric acid, nitric acid, the water mixed solution with certain mol proportion example proportioning, concrete proportioning can compensate the material of film layer according to viscosity
Matter is chosen；In like manner, the etching liquid that wet-etching technique is used for the second time only can dissolve the material of the first film layer, its etching liquid
Choose can be hydrochloric acid, nitric acid, water with the mixed solution of certain mol proportion example proportioning, it should be noted that etching viscosity is mended
Etching liquid needed for repaying film layer and the choosing of etching liquid needed for etching the first film layer can be joined according to the etching liquid of prior art
Ratio is chosen, as long as being capable of twice independent wet-etching technique.
Two: wet etchings of mode
Specifically, only with a wet-etching technique in which two, utilize blocking of photoetching agent pattern, viscosity is compensated film
Layer and the first film layer use same etching liquid to perform etching, and form viscosity and compensate pattern and the pattern of the first film layer of film layer.
Wherein, required etching liquid can consider according to the material of viscosity compensation film layer and the first film layer to be chosen.Thus, save
Technological process, and avoid the seepage of etching liquid and the problem that causes the pattern of the first film layer that unnecessary fracture occurs.
Alternatively, after the viscosity needed for being formed compensates the pattern of film layer and the pattern of the first film layer, it is also possible to including:
Stripping photoresist pattern and viscosity compensate the pattern of film layer, thus, only retain the pattern of the first film layer, i.e. form required film layer
Pattern, such as: electrode pattern, data wire pattern etc..
Alternatively, higher in order to ensure the adhesiveness between adjacent film layers, it is 10nm-that viscosity compensates the thickness range of film layer
50nm。
Additionally, the embodiment of the present invention additionally provides the manufacture method of a kind of substrate, the method mainly includes above-mentioned involved
The manufacture method of film pattern, additionally, also include other film layers or the making of element, such as, the making of thin film transistor (TFT)
Process.
Meanwhile, present invention also offers a kind of substrate, the method that this substrate mainly includes utilizing any of the above-described film pattern
The film pattern being made.Owing to being made by said method, therefore, for film pattern is compared to prior art,
The probability that broken string occurs reduces, and the size fluctuation of film pattern is less, closer to required ideal dimensions.
Alternatively, above-mentioned involved substrate is display base plate or touch base plate.
Alternatively, when substrate is display base plate, film pattern is specially pixel electrode.Picture especially for IPS pattern
For element electrode, it mainly uses molybdenum niobium alloy to be made, it is then easier to produce broken string and dimensional discrepancy when wet etching
Etc. problem, therefore, in the substrate using method involved in the present invention to be made, pixel electrode is substantially without breaking
Problem, and the pattern of pixel electrode is closer to the electrode pattern needed for IPS pattern.
Additionally, the embodiment of the present invention additionally provides a kind of display device, including above-mentioned involved substrate.Wherein, described
Display device can be liquid crystal panel, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator
Etc. any product with display function or parts.Other requisite ingredient for this display device is ability
The those of ordinary skill in territory should be appreciated that have, and does not repeats at this, also should not be taken as limiting the invention.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know basic creation
Property concept, then can make other change and amendment to these embodiments.So, claims are intended to be construed to include excellent
Select embodiment and fall into all changes and the amendment of the scope of the invention.
Obviously, those skilled in the art can carry out various change and the modification essence without deviating from the present invention to the present invention
God and scope.So, if these amendments of the present invention and modification belong to the scope of the claims in the present invention and equivalent technologies thereof
Within, then the present invention is also intended to comprise these change and modification.
Claims (11)
1. the manufacture method of a film pattern, it is characterised in that described method includes:
Sequentially form the first film layer on substrate, viscosity compensates film layer and photoresist film layer, and wherein, described viscosity compensates film
Adhesion between adhesiveness between layer and described first film layer, and described viscosity compensation film layer and described photoresist film layer
Property, it is all higher than the adhesiveness between described first film layer and described photoresist film layer；
Described photoresist film layer is patterned technique, the photoetching agent pattern needed for formation；
Utilize blocking of described photoetching agent pattern, described viscosity is compensated film layer and described first film layer performs etching technique and formed
Required viscosity compensates pattern and the pattern of described first film layer of film layer.
2. the method for claim 1, it is characterised in that utilize blocking of described photoetching agent pattern, mends described viscosity
Repay film layer and described first film layer performs etching technique and forms pattern and the figure of described first film layer of described viscosity compensation film layer
Case, specifically includes:
Utilize blocking of described photoetching agent pattern, described viscosity compensation film layer is carried out wet-etching technique for the first time and forms required gluing
Property compensate film layer pattern；
Utilize described viscosity to compensate the blocking of pattern of film layer, described first film layer is carried out second time wet-etching technique and is formed required
The pattern of the first film layer.
3. the method for claim 1, it is characterised in that utilize blocking of described photoetching agent pattern, mends described viscosity
Repay film layer and described first film layer performs etching technique and forms pattern and the figure of described first film layer of described viscosity compensation film layer
Case, specifically includes:
Utilize blocking of described photoetching agent pattern, described viscosity is compensated film layer and described first film layer carries out a wet-etching technique
Form described viscosity and compensate pattern and the pattern of described first film layer of film layer.
4. the method for claim 1, it is characterised in that the viscosity needed for being formed compensates the pattern and described the of film layer
After the pattern of one film layer, described method also includes:
Peel off described photoetching agent pattern and the pattern of described viscosity compensation film layer.
5. the method for claim 1, it is characterised in that the material of described first film layer is metal simple-substance or alloy；Institute
The material stating viscosity compensation film layer is indium tin oxide.
6. the method as described in any one of claim 1-5, it is characterised in that described viscosity compensates the thickness range of film layer and is
10nm-50nm。
7. the manufacture method of a substrate, it is characterised in that include the making of film pattern described in any one of claim 1-6
Method.
8. a substrate, it is characterised in that include the film layer figure utilizing the method described in any one of claim 1-6 to be made
Case.
9. substrate as claimed in claim 8, it is characterised in that described substrate is display base plate or touch base plate.
10. substrate as claimed in claim 9, it is characterised in that when described substrate is display base plate, described film pattern is
Pixel electrode.
11. 1 kinds of display devices, it is characterised in that include the substrate described in any one of claim 8-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610525835.8A CN106057667B (en) | 2016-07-06 | 2016-07-06 | The production method of film pattern, the production method of substrate and substrate, display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610525835.8A CN106057667B (en) | 2016-07-06 | 2016-07-06 | The production method of film pattern, the production method of substrate and substrate, display device |
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| Publication Number | Publication Date |
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| CN106057667A true CN106057667A (en) | 2016-10-26 |
| CN106057667B CN106057667B (en) | 2019-02-05 |
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| CN201610525835.8A Expired - Fee Related CN106057667B (en) | 2016-07-06 | 2016-07-06 | The production method of film pattern, the production method of substrate and substrate, display device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231797A (en) * | 2018-01-03 | 2018-06-29 | 京东方科技集团股份有限公司 | A kind of conductive structure pattern and preparation method thereof, array substrate, display device |
| WO2020108196A1 (en) * | 2018-11-27 | 2020-06-04 | 京东方科技集团股份有限公司 | Display substrate and method for manufacturing same, and display device |
| CN113366560A (en) * | 2019-01-25 | 2021-09-07 | Lg伊诺特有限公司 | Substrate for display |
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| US6008065A (en) * | 1995-11-21 | 1999-12-28 | Samsung Electronics Co., Ltd. | Method for manufacturing a liquid crystal display |
| CN101789367A (en) * | 2008-09-12 | 2010-07-28 | 台湾积体电路制造股份有限公司 | Method for fabricating semiconductor device |
| CN102956551A (en) * | 2012-11-02 | 2013-03-06 | 京东方科技集团股份有限公司 | Fabrication method of array substrate, array substrate and display device |
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| US6008065A (en) * | 1995-11-21 | 1999-12-28 | Samsung Electronics Co., Ltd. | Method for manufacturing a liquid crystal display |
| CN101789367A (en) * | 2008-09-12 | 2010-07-28 | 台湾积体电路制造股份有限公司 | Method for fabricating semiconductor device |
| CN102956551A (en) * | 2012-11-02 | 2013-03-06 | 京东方科技集团股份有限公司 | Fabrication method of array substrate, array substrate and display device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231797A (en) * | 2018-01-03 | 2018-06-29 | 京东方科技集团股份有限公司 | A kind of conductive structure pattern and preparation method thereof, array substrate, display device |
| WO2020108196A1 (en) * | 2018-11-27 | 2020-06-04 | 京东方科技集团股份有限公司 | Display substrate and method for manufacturing same, and display device |
| US11469260B2 (en) | 2018-11-27 | 2022-10-11 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Display substrate, method for preparing the same, and display device |
| CN113366560A (en) * | 2019-01-25 | 2021-09-07 | Lg伊诺特有限公司 | Substrate for display |
| US12175895B2 (en) | 2019-01-25 | 2024-12-24 | Lg Innotek Co., Ltd. | Substrate for display |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106057667B (en) | 2019-02-05 |
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