CN106054477B - Dot structure and liquid crystal display device - Google Patents
Dot structure and liquid crystal display device Download PDFInfo
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- CN106054477B CN106054477B CN201610589334.6A CN201610589334A CN106054477B CN 106054477 B CN106054477 B CN 106054477B CN 201610589334 A CN201610589334 A CN 201610589334A CN 106054477 B CN106054477 B CN 106054477B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
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- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
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Abstract
The present invention provides a kind of dot structure and liquid crystal display devices, the dot structure includes multiple data lines, a plurality of main scanning line, a plurality of sharing electric capacity scan line and multiple combination of pixels being arranged in array, each combination of pixels includes at least four pixel units being arranged in array, each pixel unit includes at least three sub-pixel units, and each sub-pixel unit includes primary area and sub-district；The sub-district includes sharing electric capacity；The capacitance of the sharing electric capacity of each sub-pixel unit of same pixel unit is equal, and in each combination of pixels, the capacitance of the sharing electric capacity of the sub-pixel unit of diagonal two adjacent pixel units is unequal.The present invention has the beneficial effect for improving liquid crystal display device aperture opening ratio.
Description
Technical field
The present invention relates to field of liquid crystal display, more particularly to a kind of dot structure and liquid crystal display device.
Background technique
Liquid crystal display (LCD, Liquid Crystal Display) is one of most widely used flat-panel monitor,
LCD includes being provided with field a pair of of panel of electrode such as pixel electrode and public electrode occurs and is arranged between two panels
Liquid crystal (LC, Liquid Crystal) layer.Electrode occurs in LC layers generate electric field when voltage is applied to show up, the electricity
Field determines the orientation of the LC molecule in liquid crystal layer, so as to adjust the polarization for the light for being incident on liquid crystal layer, LCD is made to show image.
Industry develops a kind of referred to as macromolecule stabilization vertical orientation (Polymer Stabilized at present
Vertical Alignment, PSVA) technology, the technology be in liquid crystal material mix debita spissitudo monomeric compound
(monomer) it and shakes uniform.Then, mixed liquid crystal material is placed in the tropisms such as heating arrival on heater
(Isotropy) state.When liquid crystal compound is down to room temperature, liquid crystal compound can return to nematic (nematic) state.So
Afterwards, liquid crystal compound is injected into liquid crystal cell and grants voltage.When applying voltage stablizes Liquid Crystal Molecules Alignment, then using purple
Outer light or the mode of heating allow monomeric compound to carry out polymerization reaction thus to achieve the purpose that stable alignment at polymeric layer.
Traditional VA mode liquid crystal panel (as shown in Figure 1) is when wide viewing angle is watched, the problem of often will appear colour cast.For
Improving the colour cast of wide viewing angle panel, pixel is divided into the area Liang Ge by existing wide viewing angle panel, when panel works, a primary area
(Main) brightness is higher, another sub-district (Sub) brightness is lower, to improve panel by the different area of two brightness
Wide viewing angle characteristic.Since the area in the area Sub is larger (account for pixel openings area 60% or so), the penetrance of entire pixel unit
Biggish sacrifice is had, the power consumption of backlight is increased, does not meet the theory of present environment protecting and power-saving.Further, since the area Main
It is inside high luminance pixel, and in the area Sub is low brightness pixel, high luminance pixel and low brightness pixel are excessively concentrated respectively,
So that the luminance difference in the area Liang Ge is excessively obvious, cause visual effect bad.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The purpose of the present invention is to provide a kind of dot structure and liquid crystal display devices；With solve existing dot structure and
The not high technical problem of liquid crystal display device penetrance.
To solve the above problems, technical solution provided by the invention is as follows:
The present invention provides a kind of dot structure, including multiple data lines, a plurality of main scanning line, a plurality of sharing electric capacity scan line
And multiple combination of pixels being arranged in array, each combination of pixels include at least four pixel lists being arranged in array
Member, each pixel unit include at least three sub-pixel units, and each sub-pixel unit includes primary area and sub-district；
The primary area is connect with a data line and a main scanning line respectively；
The sub-district include first film transistor, third thin film transistor (TFT), the first liquid crystal capacitance, the first storage capacitance and
Sharing electric capacity, the source electrode of the first film transistor are connect with a data line, the grid of the first film transistor and one
The main scanning line connection, the drain electrode of the first film transistor and input terminal, first liquid crystal of the third thin film transistor (TFT)
Capacitor and first storage capacitance connection, the output end of the third thin film transistor (TFT) are connect with one end of the sharing electric capacity, should
The grid of third thin film transistor (TFT) is connect with a sharing electric capacity scan line；Each sub-pixel unit of same pixel unit
The capacitance of sharing electric capacity is equal, in each combination of pixels, the sub-pixel of diagonal two adjacent pixel units
The capacitance of the sharing electric capacity of unit is unequal.
In dot structure of the present invention, in each combination of pixels, pixel unit described in any two
The capacitance of the sharing electric capacity of sub-pixel unit is unequal.
In dot structure of the present invention, the primary area include the second thin film transistor (TFT), the second liquid crystal capacitance and
Second storage capacitance, the grid of second thin film transistor (TFT) are connect with the main scanning line, the source electrode of second thin film transistor (TFT)
It is connect with the data line, the drain electrode of second thin film transistor (TFT) and second storage capacitance and the second liquid crystal capacitance connect
It connects.
In dot structure of the present invention, each pixel unit includes three sub-pixel units, three sons
Pixel unit is red sub-pixel unit, green sub-pixels unit and blue subpixels unit.
In dot structure of the present invention, the dot structure further includes common wire and public electrode, the son
Area includes the first pixel electrode and the second pixel electrode, and first pixel electrode and the public electrode are locally facing each other with shape
At first liquid crystal capacitance, first pixel electrode and the common wire are locally facing each other to form the first storage electricity
Hold, second pixel electrode and the common wire are locally facing each other to form the sharing electric capacity.
In dot structure of the present invention, the primary area further includes third pixel electrode, the third pixel electrode with
The public electrode is locally facing each other to form second liquid crystal capacitance, and the third pixel electrode and the common wire are locally mutual
Face is to form second storage capacitance.
The present invention also provides a kind of liquid crystal display device, including dot structure, the dot structure include multiple data lines,
A plurality of main scanning line, a plurality of sharing electric capacity scan line and multiple combination of pixels being arranged in array, each combination of pixels
The pixel unit being arranged in array including at least four, each pixel unit includes at least three sub-pixel units, each
The sub-pixel unit includes primary area and sub-district；The primary area connects with a data line and a main scanning line respectively
It connects；
The sub-district include first film transistor, third thin film transistor (TFT), the first liquid crystal capacitance, the first storage capacitance and
Sharing electric capacity, the source electrode of the first film transistor are connect with a data line, the grid of the first film transistor and one
The main scanning line connection, the drain electrode of the first film transistor and input terminal, first liquid crystal of the third thin film transistor (TFT)
Capacitor and first storage capacitance connection, the output end of the third thin film transistor (TFT) are connect with one end of the sharing electric capacity, should
The grid of third thin film transistor (TFT) is connect with a sharing electric capacity scan line；Each sub-pixel unit of same pixel unit
The capacitance of sharing electric capacity is equal, in each combination of pixels, the sub-pixel of diagonal two adjacent pixel units
The capacitance of the sharing electric capacity of unit is unequal.
In liquid crystal display device of the present invention, in each combination of pixels, pixel list described in any two
The capacitance of the sharing electric capacity of the sub-pixel unit of member is unequal.
In liquid crystal display device of the present invention, the primary area includes the second thin film transistor (TFT), the second liquid crystal capacitance
And second storage capacitance, the grid of second thin film transistor (TFT) are connect with the main scanning line, second thin film transistor (TFT)
Source electrode is connect with the data line, the drain electrode of second thin film transistor (TFT) and second storage capacitance and the second liquid crystal capacitance
Connection.
In liquid crystal display device of the present invention, the dot structure further includes common wire and public electrode, institute
Stating sub-district includes the first pixel electrode and the second pixel electrode, and first pixel electrode and the public electrode are locally facing each other
To form first liquid crystal capacitance, first pixel electrode and the common wire are locally facing each other to form first storage
Capacitor, second pixel electrode and the common wire are locally facing each other to form the sharing electric capacity.
Compared with prior art, the present invention is each by the way that dot structure is divided into multiple combination of pixels being arranged in array
The combination of pixels includes at least four pixel units being arranged in array, and each pixel unit includes at least three sub- pictures
Plain unit, in the same combination of pixels, the sharing electric capacity of the sub-district of the sub-pixel unit of diagonal two adjacent pixel units
It is unequal, realize at least four pixel unit have it is different drag down pressure difference, and then avoid high luminance pixel unit and low bright
The problem of spending low penetrance caused by pixel unit is excessively concentrated and film flicker, while different size of sharing electric capacity is set
Aperture opening ratio can be improved to a certain extent, so that liquid crystal panel penetrance is further promoted.
For above content of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate institute's accompanying drawings, makees
Detailed description are as follows:
Detailed description of the invention
Fig. 1 is the structure chart of the dot structure in one embodiment of the present invention.
Fig. 2 is the circuit structure diagram of the sub-pixel unit of the dot structure in embodiment illustrated in fig. 1 of the present invention.
Specific embodiment
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the present invention with reference to additional schema
Example.The direction term that the present invention is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outside", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.
The similar unit of structure is to be given the same reference numerals in the figure.
Fig. 1 and Fig. 2 is please referred to, Fig. 1 is the structure chart of the dot structure in one embodiment of the present invention, is mainly answered
For in liquid crystal display device.In the present embodiment, the dot structure include multiple data lines Dn, it is a plurality of main scanning line Gn, more
Sharing electric capacity scan line Tn and multiple combination of pixels 10 being arranged in array, each combination of pixels 10 include at least four
A pixel unit 11 being arranged in array, each pixel unit 11 include at least three sub-pixel units 111, each described
Sub-pixel unit 111 includes primary area 1112 and sub-district 1111；The primary area 1112 respectively with an institute of data line Dn and one
State main scanning line Gn connection.
In the present embodiment, each pixel unit 11 includes three sub-pixel units 111, three sub-pixel units 111
For red sub-pixel unit R 1/R2, green sub-pixels unit G1/G2 and blue subpixels unit B 1/B2.It will be understood
Ground, the pixel unit 11 can also include four sub-pixel units 111, i.e. respectively four sub-pixels unit 111 of red, green, blue and white.
The primary area 1112 includes the second thin film transistor (TFT) Q2, the second liquid crystal capacitance Clc1 and the second storage capacitance Cst2,
The grid of second thin film transistor (TFT) Q2 is connect with the main scanning line Gn, the source electrode and the number of second thin film transistor (TFT) Q2
According to line Dn connection, the drain electrode of second thin film transistor (TFT) Q2 and the second storage capacitance Cst2 and the second liquid crystal capacitance Ccl2
Connection.
The sub-district 1111 includes first film transistor Q1, third thin film transistor (TFT) Q3, the first liquid crystal capacitance Clc1, first
Storage capacitance Cst1 and sharing electric capacity Cs, the source electrode of first film transistor Q1 are connect with a data line Dn, this
The grid of one thin film transistor (TFT) Q1 is connect with a main scanning line Gn, and the drain electrode of first film transistor Q1 and the third are thin
The input terminal of film transistor Q3, the first liquid crystal capacitance Clc1 and first storage capacitance Cst1 connection.The third film is brilliant
The output end of body pipe Q3 is connect with one end of sharing electric capacity Cs, and the grid of third thin film transistor (TFT) Q3 described shares electricity with one
Hold the scan line connection of Cs；The capacitance of the sharing electric capacity Cs of each sub-pixel unit 111 of same pixel unit 11 is equal,
In each combination of pixels 10, the sharing electric capacity Cs of the sub-pixel unit 111 of diagonal two adjacent pixel units 11
Capacitance it is unequal.Further, in each combination of pixels 10, the sub-pixel unit of any two pixel unit 11
The capacitance of 111 sharing electric capacity Cs is unequal.
Further, which further includes the public affairs on the common wire AR Com and color membrane substrates in array substrate
Common electrode CF Com.The sub-district 1111 includes the first pixel electrode and the second pixel electrode, first pixel electrode and the public affairs
Common electrode CF Com is locally facing each other to form the first liquid crystal capacitance Clc1, first pixel electrode and common wire AR Com
Part is facing each other to form the first storage capacitance Cst1, and second pixel electrode and common wire AR Com are locally mutual
Face is to form the sharing electric capacity Cs.
The primary area 1112 further includes third pixel electrode, and the third pixel electrode and public electrode CF Com are locally mutual
For face to form the second liquid crystal capacitance Clc2, the third pixel electrode and common wire AR Com are facing each other to be formed
State the second storage capacitance Cst2.
It is to be appreciated that each combination of pixels 10 can also include such as 8 pixel units 11 or 16 pixel lists
Member 11, certainly, is not limited to this.
The present invention also provides a kind of liquid crystal display devices comprising dot structure, the dot structure include a plurality of data
Line Dn, a plurality of main scanning line Gn, a plurality of sharing electric capacity scan line Tn and multiple combination of pixels 10, Mei Yisuo being arranged in array
Stating combination of pixels 10 includes at least four pixel units 11 being arranged in array, and each pixel unit 11 includes at least three
Sub-pixel unit 111, each sub-pixel unit 111 include primary area 1112 and sub-district 1111；The primary area points 1111 not with
The one main scanning line Gn connection of data line Dn and one.
In the present embodiment, each pixel unit 11 includes three sub-pixel units 111, three sub-pixel units 111
For red sub-pixel unit R 1/R2, green sub-pixels unit G1/G2 and blue subpixels unit B 1/B2.It will be understood
Ground, the pixel unit 11 can also include four sub-pixel units 111, i.e. respectively four sub-pixels unit 111 of red, green, blue and white.
The primary area 1112 includes the second thin film transistor (TFT) Q2, the second liquid crystal capacitance Clc1 and the second storage capacitance Cst2,
The grid of second thin film transistor (TFT) Q2 is connect with the main scanning line Gn, the source electrode and the number of second thin film transistor (TFT) Q2
According to line Dn connection, the drain electrode of second thin film transistor (TFT) Q2 and the second storage capacitance Cst2 and the second liquid crystal capacitance Ccl2
Connection.
The sub-district 1111 includes first film transistor Q1, third thin film transistor (TFT) Q3, the first liquid crystal capacitance Clc1, first
Storage capacitance Cst1 and sharing electric capacity Cs, the source electrode of first film transistor Q1 are connect with a data line Dn, this
The grid of one thin film transistor (TFT) Q1 is connect with a main scanning line Gn, and the drain electrode of first film transistor Q1 and the third are thin
The input terminal of film transistor Q3, the first liquid crystal capacitance Clc1 and first storage capacitance Cst1 connection.The third film is brilliant
The output end of body pipe Q3 is connect with one end of sharing electric capacity Cs, and the grid of third thin film transistor (TFT) Q3 described shares electricity with one
Hold the scan line connection of Cs；The capacitance of the sharing electric capacity Cs of each sub-pixel unit 111 of same pixel unit 11 is equal,
In each combination of pixels 10, the sharing electric capacity Cs of the sub-pixel unit 111 of diagonal two adjacent pixel units 11
Capacitance it is unequal.Further, in each combination of pixels 10, the sub-pixel unit of any two pixel unit 11
The capacitance of 111 sharing electric capacity Cs is unequal.
Further, which further includes the public affairs on the common wire AR Com and color membrane substrates in array substrate
Common electrode CF Com.The sub-district 1111 includes the first pixel electrode and the second pixel electrode, first pixel electrode and the public affairs
Common electrode CF Com is locally facing each other to form the first liquid crystal capacitance Clc1, first pixel electrode and common wire AR Com
Part is facing each other to form the first storage capacitance Cst1, and second pixel electrode and common wire AR Com are locally mutual
Face is to form the sharing electric capacity Cs.
The primary area 1112 further includes third pixel electrode, and the third pixel electrode and public electrode CF Com are locally mutual
For face to form the second liquid crystal capacitance Clc2, the third pixel electrode and common wire AR Com are facing each other to be formed
State the second storage capacitance Cst2.
It is to be appreciated that each combination of pixels 10 can also include such as 8 pixel units 11 or 16 pixel lists
Member 11, certainly, is not limited to this.
From the foregoing, it will be observed that the present invention is by being divided into multiple combination of pixels being arranged in array, each picture for dot structure
Element combination includes at least four pixel units being arranged in array, and each pixel unit includes at least three sub-pixel lists
Member, in the same combination of pixels, the sharing electric capacity of the sub-district of the sub-pixel unit of diagonal two adjacent pixel units not phase
Deng, realize at least four pixel unit have it is different drag down pressure difference, and then avoid high luminance pixel unit and low-light level picture
The problem of penetrance caused by plain unit is excessively concentrated is low and film flicker, while different size of sharing electric capacity is arranged also can one
Determine to improve aperture opening ratio in degree, so that liquid crystal panel penetrance is further promoted.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of dot structure, which is characterized in that including multiple data lines, a plurality of main scanning line, a plurality of sharing electric capacity scan line
And multiple combination of pixels being arranged in array, each combination of pixels include at least four pixel lists being arranged in array
Member, each pixel unit include at least three sub-pixel units, and each sub-pixel unit includes primary area and sub-district；
The primary area is connect with a data line and a main scanning line respectively；
The sub-district includes first film transistor, third thin film transistor (TFT), the first liquid crystal capacitance, the first storage capacitance and sharing
Capacitor, the source electrode of the first film transistor is connect with a data line, described in the grid of the first film transistor and one
Main scanning line connection, the drain electrode of the first film transistor and the input terminal of the third thin film transistor (TFT), first liquid crystal capacitance,
And first storage capacitance connection, the output end of the third thin film transistor (TFT) are connect with one end of the sharing electric capacity, the third
The grid of thin film transistor (TFT) is connect with a sharing electric capacity scan line；The sharing of each sub-pixel unit of same pixel unit
The capacitance of capacitor is equal, in each combination of pixels, the sub-pixel unit of diagonal two adjacent pixel units
Sharing electric capacity capacitance it is unequal, wherein at least four pixel unit has and different drags down pressure difference.
2. dot structure according to claim 1, which is characterized in that in each combination of pixels, any two institute
The capacitance for stating the sharing electric capacity of the sub-pixel unit of pixel unit is unequal.
3. dot structure according to claim 1, which is characterized in that the primary area includes the second thin film transistor (TFT), second
Liquid crystal capacitance and the second storage capacitance, the grid of second thin film transistor (TFT) are connect with the main scanning line, second film
The source electrode of transistor is connect with the data line, the drain electrode of second thin film transistor (TFT) and second storage capacitance and second
Liquid crystal capacitance connection.
4. dot structure according to claim 1, which is characterized in that each pixel unit includes three sub-pixel lists
Member, three sub-pixel units are red sub-pixel unit, green sub-pixels unit and blue subpixels unit.
5. dot structure according to claim 3, which is characterized in that the dot structure further includes common wire and public
Electrode, the sub-district include the first pixel electrode and the second pixel electrode, and first pixel electrode and the public electrode are local
It is facing each other to form first liquid crystal capacitance, first pixel electrode and the common wire are locally facing each other with described in being formed
First storage capacitance, second pixel electrode and the common wire are locally facing each other to form the sharing electric capacity.
6. dot structure according to claim 5, which is characterized in that the primary area further includes third pixel electrode, this
Three pixel electrodes and the public electrode are locally facing each other to form second liquid crystal capacitance, the third pixel electrode and the public affairs
Conllinear part is facing each other to form second storage capacitance.
7. a kind of liquid crystal display device, which is characterized in that including dot structure, which includes multiple data lines, a plurality of
Main scanning line, a plurality of sharing electric capacity scan line and multiple combination of pixels being arranged in array, each combination of pixels include
At least four pixel units being arranged in array, each pixel unit include at least three sub-pixel units, each described
Sub-pixel unit includes primary area and sub-district；The primary area is connect with a data line and a main scanning line respectively；
The sub-district includes first film transistor, third thin film transistor (TFT), the first liquid crystal capacitance, the first storage capacitance and sharing
Capacitor, the source electrode of the first film transistor is connect with a data line, described in the grid of the first film transistor and one
Main scanning line connection, the drain electrode of the first film transistor and the input terminal of the third thin film transistor (TFT), first liquid crystal capacitance,
And first storage capacitance connection, the output end of the third thin film transistor (TFT) are connect with one end of the sharing electric capacity, the third
The grid of thin film transistor (TFT) is connect with a sharing electric capacity scan line；The sharing of each sub-pixel unit of same pixel unit
The capacitance of capacitor is equal, in each combination of pixels, the sub-pixel unit of diagonal two adjacent pixel units
Sharing electric capacity capacitance it is unequal, wherein at least four pixel unit has and different drags down pressure difference.
8. liquid crystal display device according to claim 7, which is characterized in that in each combination of pixels, any two
The capacitance of the sharing electric capacity of the sub-pixel unit of a pixel unit is unequal.
9. liquid crystal display device according to claim 7, which is characterized in that the primary area include the second thin film transistor (TFT),
Second liquid crystal capacitance and the second storage capacitance, the grid of second thin film transistor (TFT) are connect with the main scanning line, this second
The source electrode of thin film transistor (TFT) is connect with the data line, the drain electrode of second thin film transistor (TFT) and second storage capacitance and
The connection of second liquid crystal capacitance.
10. liquid crystal display device according to claim 9, which is characterized in that the dot structure further include common wire with
And public electrode, the sub-district include the first pixel electrode and the second pixel electrode, first pixel electrode and the common electrical
Extremely part is facing each other to form first liquid crystal capacitance, and first pixel electrode and the common wire are locally facing each other with shape
At first storage capacitance, second pixel electrode and the common wire are locally facing each other to form the sharing electric capacity.
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| CN201610589334.6A CN106054477B (en) | 2016-07-25 | 2016-07-25 | Dot structure and liquid crystal display device |
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| CN107300815B (en) * | 2017-08-14 | 2020-06-05 | 深圳市华星光电技术有限公司 | Array substrate, liquid crystal display panel and dot inversion driving method thereof |
| CN107561790A (en) * | 2017-09-19 | 2018-01-09 | 惠科股份有限公司 | Array substrate and display panel thereof |
| CN110262147B (en) * | 2018-08-10 | 2021-10-29 | 友达光电股份有限公司 | Semiconductor substrate and driving method |
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