CN106033865A - Semiconductor laser and semiconductor laser beam-combining structure - Google Patents
Semiconductor laser and semiconductor laser beam-combining structure Download PDFInfo
- Publication number
- CN106033865A CN106033865A CN201510110205.XA CN201510110205A CN106033865A CN 106033865 A CN106033865 A CN 106033865A CN 201510110205 A CN201510110205 A CN 201510110205A CN 106033865 A CN106033865 A CN 106033865A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- laser
- diaphragm
- reflection
- binding structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a semiconductor laser, comprising a plurality of outer cavity laser units and a plurality of reflection film sheets; the reflection film sheets correspond to the outer cavity lasers and are arranged in a stepwise manner; output light going through the outer cavity lasers forms a combined laser beam through projection or reflection of the reflection film sheet In the technical scheme of the semiconductor laser and the semiconductor laser beam-combining structure, the outer cavity laser device array consisting of the plurality of outer cavity laser units is finally combined in a beam-combining light path, and, finally, high power output of the semiconductor laser is realized.
Description
Technical field
The present invention relates to field of lasers, refer in particular to a kind of semiconductor laser and semiconductor laser closes binding structure.
Background technology
Semiconductor laser is high with solid state laser, gas laser and optical fiber laser phase specific efficiency, and volume is little, and price is low, and reliability is high, but power is relatively low and beam quality is poor.
By the most independent semiconductor laser is carried out light beam synthesis in prior art, launch a branch of high power, high-quality laser beam, reach power and the beam quality level of traditional chemical solid state laser, obtain higher power output and controlled caloric value, but the transmitting wavelength of semiconductor laser independent in laser synthesis method in this depends on semi-conducting material itself, and along with the change generation drift of temperature, if expecting the sharp combiner that specific wavelength combines, it is necessary to select output wavelength the accurate temperature controller of each separate semiconductor laser instrument.The laser output beam of wavelength combinations that is specific or that specify cannot be obtained within the scope of a wider temperature.
Summary of the invention
The present invention solves above-mentioned technical problem, it is provided that a kind of semiconductor laser and semiconductor laser close binding structure.
In order to solve above-mentioned technical problem, the technical scheme is that a kind of semiconductor laser closes binding structure, including multiple outside cavity gas laser unit and multiple reflection diaphragm, reflection diaphragm is corresponding with outside cavity gas laser, and in step arrangement, the output light through outside cavity gas laser is formed after reflection diaphragm projection or reflection and swashs combiner.
Further, described outside cavity gas laser unit includes laser diode, lens, grating and output coupled lens, the transmitting light of laser diode will dissipate hot spot through lens and be converted into collimated light, by there is dispersion after grating in collimated light, collimated light forms diffraction pattern with the outgoing of different diffraction angle, and diffraction pattern produces laser by output coupled lens and shakes.
Further, the rear end face of described laser diode is high reflecting surface, and exit facet is natural cleavage plane or plates anti-reflection face.
Further, described reflection diaphragm uses WDM diaphragm, described WDM diaphragm to use YAG or white stone sheet plated film.
A kind of semiconductor laser, close binding structure including two semiconductor lasers described above, two semiconductor lasers close and are provided with polarization splitting prism and 1/2 wave plate between binding structure, one of them semiconductor laser closes the bundle structure output light polarization state with another one semiconductor laser conjunction bundle structure output light after 1/2 wave plate and is mutually perpendicular to, and two polarization state orthogonal output light close bundle through polarization splitting prism.
Further, described PBS diaphragm uses YAG or white stone sheet plated film.
Using technical scheme, the outside cavity gas laser array being made up of multiple outside cavity gas laser unit eventually converges to close in beam optical path, finally realizes the high-power output of semiconductor laser.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is described in further detail.
Fig. 1 is the embodiment of the present invention one structural representation；
Fig. 2 is the embodiment of the present invention two structural representation.
Detailed description of the invention
Below in conjunction with the accompanying drawings and detailed description of the invention, the present invention will be further described.
nullEmbodiment one is as shown in Figure 1，Semiconductor laser closes binding structure，Including multiple outside cavity gas laser unit 10 and multiple reflection diaphragm 20，Reflection diaphragm 20 is corresponding with outside cavity gas laser 10，In step arrangement，Outside cavity gas laser unit 10 includes laser diode 11、Lens 12、Grating 13 and output coupled lens 14，The transmitting light of laser diode 11 will dissipate hot spot through lens 12 and be converted into collimated light，Dispersion is there is in the collimated light of wide spectral bandwidth after grating 13，The different angle of diffraction of light meeting of launching of different wave length forms diffraction pattern outgoing，But the hot spot of co-wavelength is still with collimated light outgoing，Diffraction pattern is irradiated to export on coupled lens 14，The centre wavelength that in all of diffraction light, only diffraction direction is identical with output coupling mirror 14 normal direction could produce laser generation in outside cavity gas laser unit 10，The hot spot of other wavelength is because diffraction direction and output couple,14 normal directions exist angles and there is the biggest cavity loss finally cannot starting of oscillation in outside cavity gas laser unit 10，The narrow linewidth light beam of filtering projects through reflection diaphragm 20 or is reflected into swashing combiner，Realize the high-power output of semiconductor laser，Each outside cavity gas laser unit 10 only transmitted wave length to this exocoel carries out high anti-，Other are launched wavelength is all projection.
In the present embodiment, the rear end face of described laser diode 11 is high reflecting surface, exit facet is natural cleavage plane or plates anti-reflection face, the live width of described Output of laser depends on the groove number of selected grating 13, described reflection diaphragm 20 uses WDM diaphragm, and WDM diaphragm uses YAG or white stone sheet plated film.
Embodiment two is as shown in Figure 2, a kind of semiconductor laser, binding structure is closed including two a kind of described semiconductor lasers of embodiment, it is respectively the first semiconductor laser and closes binding structure 50 and the second semiconductor laser conjunction binding structure 60, first semiconductor laser closes binding structure 50 and the second semiconductor laser closes and is provided with PBS diaphragm 30 and 1/2 wave plate 40 between binding structure 60, first semiconductor laser closes binding structure 50 and exports light and close binding structure 60 and export the polarization state of light with the second semiconductor laser and be mutually perpendicular to after 1/2 wave plate 40, two polarization state orthogonal output light close bundle through PBS diaphragm 30, in embodiment, WDM diaphragm and PBS diaphragm use YAG or white stone sheet plated film.
Although specifically showing in conjunction with preferred embodiment and describing the present invention; but those skilled in the art should be understood that; in the spirit and scope of the present invention limited without departing from appended claims; in the form and details the present invention is made a variety of changes, be protection scope of the present invention.
Claims (6)
1. a semiconductor laser closes binding structure, it is characterized in that: include multiple outside cavity gas laser unit and multiple reflection diaphragm, reflection diaphragm is corresponding with outside cavity gas laser, and in step arrangement, the output light through outside cavity gas laser is formed after reflection diaphragm projection or reflection and swashs combiner.
A kind of semiconductor laser the most according to claim 1 closes binding structure, it is characterized in that: described outside cavity gas laser unit includes laser diode, lens, grating and output coupled lens, the transmitting light of laser diode will dissipate hot spot through lens and be converted into collimated light, by there is dispersion after grating in collimated light, collimated light forms diffraction pattern with the outgoing of different diffraction angle, and diffraction pattern produces laser by output coupled lens and shakes.
A kind of semiconductor laser the most according to claim 2 closes binding structure, it is characterised in that: the rear end face of described laser diode is high reflecting surface, and exit facet is natural cleavage plane or plates anti-reflection face.
A kind of semiconductor laser the most according to claim 1 closes binding structure, it is characterised in that: described reflection diaphragm uses WDM diaphragm, described WDM diaphragm to use YAG or white stone sheet plated film.
5. a semiconductor laser, it is characterized in that: include that in two claim 1-4, arbitrary described a kind of semiconductor laser closes binding structure, two semiconductor lasers close and are provided with PBS diaphragm and 1/2 wave plate between binding structure, one of them semiconductor laser closes the bundle structure output light polarization state with another one semiconductor laser conjunction bundle structure output light after 1/2 wave plate and is mutually perpendicular to, and two polarization state orthogonal output light close bundle through PBS diaphragm.
A kind of semiconductor laser the most according to claim 5, it is characterised in that: described PBS diaphragm uses YAG or white stone sheet plated film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510110205.XA CN106033865A (en) | 2015-03-13 | 2015-03-13 | Semiconductor laser and semiconductor laser beam-combining structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510110205.XA CN106033865A (en) | 2015-03-13 | 2015-03-13 | Semiconductor laser and semiconductor laser beam-combining structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106033865A true CN106033865A (en) | 2016-10-19 |
Family
ID=57151102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510110205.XA Pending CN106033865A (en) | 2015-03-13 | 2015-03-13 | Semiconductor laser and semiconductor laser beam-combining structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106033865A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107037595A (en) * | 2017-05-08 | 2017-08-11 | 中国科学院长春光学精密机械与物理研究所 | A kind of laser combined beam light system |
| CN109449743A (en) * | 2018-10-24 | 2019-03-08 | 无锡市大华激光设备有限公司 | A kind of solid state laser and semiconductor laser light combination beam system |
| CN112789773A (en) * | 2018-09-30 | 2021-05-11 | 安捷伦科技有限公司 | Laser module with multiple component lasers |
| CN114759431A (en) * | 2022-06-16 | 2022-07-15 | 北京凯普林光电科技股份有限公司 | High-brightness outer cavity semiconductor laser |
| CN115566535A (en) * | 2022-12-06 | 2023-01-03 | 北京凯普林光电科技股份有限公司 | External cavity semiconductor laser |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6192062B1 (en) * | 1998-09-08 | 2001-02-20 | Massachusetts Institute Of Technology | Beam combining of diode laser array elements for high brightness and power |
| US20050169581A1 (en) * | 2004-01-30 | 2005-08-04 | Elizabeth Downing | Laser diode system |
| CN102208753A (en) * | 2011-04-27 | 2011-10-05 | 苏州华必大激光有限公司 | External cavity semiconductor laser with multi-wavelength combination |
-
2015
- 2015-03-13 CN CN201510110205.XA patent/CN106033865A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6192062B1 (en) * | 1998-09-08 | 2001-02-20 | Massachusetts Institute Of Technology | Beam combining of diode laser array elements for high brightness and power |
| US20050169581A1 (en) * | 2004-01-30 | 2005-08-04 | Elizabeth Downing | Laser diode system |
| CN102208753A (en) * | 2011-04-27 | 2011-10-05 | 苏州华必大激光有限公司 | External cavity semiconductor laser with multi-wavelength combination |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107037595A (en) * | 2017-05-08 | 2017-08-11 | 中国科学院长春光学精密机械与物理研究所 | A kind of laser combined beam light system |
| CN112789773A (en) * | 2018-09-30 | 2021-05-11 | 安捷伦科技有限公司 | Laser module with multiple component lasers |
| CN112789773B (en) * | 2018-09-30 | 2024-09-06 | 安捷伦科技有限公司 | Laser module with multiple constituent lasers |
| CN109449743A (en) * | 2018-10-24 | 2019-03-08 | 无锡市大华激光设备有限公司 | A kind of solid state laser and semiconductor laser light combination beam system |
| CN114759431A (en) * | 2022-06-16 | 2022-07-15 | 北京凯普林光电科技股份有限公司 | High-brightness outer cavity semiconductor laser |
| CN115566535A (en) * | 2022-12-06 | 2023-01-03 | 北京凯普林光电科技股份有限公司 | External cavity semiconductor laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9596034B2 (en) | High brightness dense wavelength multiplexing laser | |
| CN106033865A (en) | Semiconductor laser and semiconductor laser beam-combining structure | |
| US9905993B2 (en) | Wavelength selective external resonator and beam combining system for dense wavelength beam combining laser | |
| CN105717589B (en) | A kind of monochromatic light mouth multidiameter delay light emission component | |
| CN100576666C (en) | High Power Beam Coupled Diode Lasers | |
| CN107946898A (en) | A kind of semiconductor laser beam merging apparatus and conjunction Shu Fangfa | |
| CN105428996A (en) | Multi-grating structure-based semiconductor laser beam combination device and beam combination method | |
| TWI805740B (en) | Methods and systems for spectral beam-combining | |
| US9316846B2 (en) | Systems and methods to provide high brightness diode laser outputs | |
| CN101859975A (en) | Dual-wavelength tunable thulium-doped fiber laser | |
| JP6227212B1 (en) | Laser oscillator | |
| JP2004072069A (en) | Resonant cavity system of tunable multiple-wavelength semiconductor laser | |
| CN207217993U (en) | A wavelength-division-multiplexed multi-wavelength frequency-doubling fiber laser device | |
| JP2009198606A (en) | Wavelength converting apparatus | |
| CN102868089A (en) | Device and method of using single-grating external cavity feedback to realize beam combination of multiple semiconductor lasers | |
| US20170222401A1 (en) | Dense wavelength beam combining with variable feedback control | |
| CN103004039B (en) | External cavity laser | |
| CN104600566A (en) | High beam quality of semiconductor laser array beam combination device | |
| JP2009283531A (en) | Wavelength-variable light source | |
| CN101369717B (en) | Multi-light beam coupling high power semiconductor laser unit | |
| CN110011169A (en) | Self-frequency-doubling laser generating device and laser | |
| CN104577692B (en) | A kind of frequency spectrum beam merging apparatus of Frequency Selecting by Fiber Bragg Grating | |
| CN104820286A (en) | Single-emitter line beam system | |
| CN108092126A (en) | Intracavitary closes beam multiple wavelength output laser | |
| CN210866767U (en) | Dual-wavelength laser device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161019 |
|
| RJ01 | Rejection of invention patent application after publication |