CN106024665B - A kind of conditions of exposure detection method and system - Google Patents
A kind of conditions of exposure detection method and system Download PDFInfo
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- CN106024665B CN106024665B CN201610370132.2A CN201610370132A CN106024665B CN 106024665 B CN106024665 B CN 106024665B CN 201610370132 A CN201610370132 A CN 201610370132A CN 106024665 B CN106024665 B CN 106024665B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention provides a kind of conditions of exposure detection method, the pattern for obtaining the pattern array of photoresist on wafer is scanned by CDSEM equipment, and obtains the coordinate of institute's scan pattern；Coordinate format is converted into the format that Defect Scanning instrument can identify again；Electronic area is expanded into centered on the coordinate of institute's scan pattern, defect threshold value by setting electronic area is higher than the defect threshold value of background area, come so that the scanning defective value for the electronic area that subsequent defective scanner detects is lower than the defect threshold value that electronics is gone, it avoids the electronic area scanned through CDSEM equipment from reporting the repetition of the Defect Scanning of Defect Scanning instrument by mistake, improves Defect Scanning efficiency.
Description
Technical field
The present invention relates to semiconductor process technique fields, and in particular to a kind of conditions of exposure detection method and system.
Background technique
Now as semiconductor critical size is smaller and smaller, the lithographic process before many etchings and ion implanting requires to do
FEM (focus exposure matrix, Focus Exposure Matrix) wafer finds relatively good litho machine etching condition；The mistake
The photoresist on FEM wafer is exposed while journey is the focus offset for gradually changing litho machine, then uses CDSEM equipment
To monitor the feature sizes for the pattern being formed on FEM wafer, then using Defect Scanning equipment the pattern on FEM wafer is carried out
Defect Scanning.
However, this will cause since CDSEM is to generate secondary electron using scanning electron-beam bombardment crystal column surface to be imaged
Crystal column surface is filled with electronics, forms electron bombardment mark, shows small range when optics bright field scanning machine carries out Defect Scanning
Gloomy situation, when this electron bombardment mark after CDSEM is imaged will lead to the subsequent progress defects detection to wafer, wafer
In Defect Scanning figure, with a device mask plate having a size of unit, it will appear repeated defects in same position between multiple units,
The normal defects detection technique of this severe jamming.Further, since the Defect Scanning formula for establishing FEM wafer need it is relatively long
Time, and the detection of FEM wafer defect is needed to carry out on the figure and picture of FEM wafer, so, current detection process
Are as follows: the pattern in the photoresist on FEM wafer is monitored through CDSEM first, Defect Scanning, and nothing then are carried out to FEM wafer again
Method is by the reversed order of the two；Therefore, the interference of the electron bombardment mark of CDSEM is not can avoid when detecting to FEM wafer defect.
Summary of the invention
In order to overcome the above problems, the present invention is intended to provide a kind of conditions of exposure detection method, passes through amendment electron bombardment
The scanning threshold value of mark position, to avoid interference of the electron bombardment mark to the defects detection of wafer.
In order to achieve the above object, the present invention provides a kind of conditions of exposure detection methods comprising following steps:
Step 01: a wafer is provided；Wherein, photoresist is formed on wafer, using Focus Exposure array manner to crystalline substance
Photoresist on circle is exposed, and is formed with pattern array in the photoresist；
Step 02: scanning the pattern in the pattern array in the photoresist using CDSEM equipment, and obtain and scanned
Pattern coordinate；
Step 03: the format of the coordinate of the scanned pattern of conversion can be identified, and send out by Defect Scanning equipment
Give the Defect Scanning equipment；
Step 04: extension obtains an electronic area centered on the coordinate after converting；Wherein, every in the pattern array
A array is a background area, and the electronic area is located in the background area；
Step 05: in Defect Scanning formula, setting the defect threshold value of background area, and set the defect threshold value of electronic area
Higher than the defect threshold value of the background area；
Step 06: wafer being scanned using Defect Scanning equipment, obtains scanning defective value and the institute of the electronic area
State the scanning defective value of background area；Compare the background area scanning defective value and the background area defect threshold value, according to than
Relatively result judges whether the background area is abnormal；Wherein, the scanning defective value of the electronic area is lower than the defect of the electronic area
Threshold value, the Defect Scanning equipment think that the electronic area is normal.
Preferably, the electronic area is the square area centered on the coordinate after the conversion.
Preferably, the side length of the square area is 3~6 μm.
Preferably, the defect threshold value of the electronic area is twice or more of the defect threshold value of the background area.
Preferably, after the step 04 further include: scan to obtain the pattern in the photoresist according to CDSEM to judge
The electronic area whether there is defect.
Preferably, the wafer is the wafer that surface is formed with polysilicon.
In order to achieve the above object, the present invention also provides a kind of conditions of exposure detection systems comprising:
CDSEM equipment for scanning the pattern in the pattern array in the photoresist, and obtains scanned pattern
Coordinate；
Conversion module, the format of the coordinate for converting scanned pattern can be identified by Defect Scanning equipment；
Transmission module, for the coordinate after conversion to be sent to Defect Scanning equipment；
Defect Scanning equipment includes
Computing module obtains an electronic area for extension centered on the coordinate after converting；
Memory module, for storing Defect Scanning formula；
Input module, what defect threshold value from background area to storage Defect Scanning formula and setting electronics for setting were gone
Defect threshold value；Wherein, the defect threshold value of electronic area is higher than the defect threshold value of the background area；
Detection module, for being scanned to wafer, to obtain the scanning defective value and the background area of the electronic area
Scanning defective value；
Comparison module, the defect threshold value of scanning defective value and the background area for the background area, Yi Jisuo
State the defect threshold value of scanning defective value and the electronic area that electronics is gone；
Judgment module judges whether the background area is abnormal according to comparison result；Wherein, described in the judgment module judgement
The scanning defective value of electronic area is lower than the defect threshold value of the electronic area, and electronic area described in the judgment module is normal.
Preferably, the electronic area is the square area centered on the coordinate after the conversion.
Preferably, the defect threshold value of the electronic area is twice or more of the defect threshold value of the background area.
Preferably, the wafer is the wafer that surface is formed with polysilicon.
Conditions of exposure detection method of the invention scans the pattern array for obtaining photoresist on wafer by CDSEM equipment
Pattern, and obtain the coordinate of institute's scan pattern；Coordinate format is converted into the format that Defect Scanning instrument can identify again；With institute
It is expanded into electronic area centered on the coordinate of scan pattern, the defect threshold value by setting electronic area is higher than the defect threshold of background area
Value, comes so that the defect threshold value that the scanning defective value for the electronic area that subsequent defective scanner detects is gone lower than electronics, avoid through
The electronic area of CDSEM equipment scanning reports the repetition of the Defect Scanning of Defect Scanning instrument by mistake, improves Defect Scanning efficiency.
Detailed description of the invention
Fig. 1 is the schematic diagram of FEM wafer
Fig. 2 is the block diagram of the conditions of exposure detection system of a preferred embodiment of the invention
Fig. 3 is the schematic diagram of the electronic area of a preferred embodiment of the invention
Fig. 4 is the flow diagram of the conditions of exposure detection method of a preferred embodiment of the invention
Fig. 5 is pair of the Defect Scanning schematic diagram of conventional Defect Scanning schematic diagram and a preferred embodiment of the invention
Than
Specific embodiment
To keep the contents of the present invention more clear and easy to understand, below in conjunction with Figure of description, the contents of the present invention are made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, general replacement known to those skilled in the art
It is included within the scope of protection of the present invention.
Below in conjunction with attached drawing 1-5 and specific embodiment, invention is further described in detail.It should be noted that attached drawing is equal
The present embodiment is aided in illustrating to facilitate, clearly reach using very simplified form, using non-accurate ratio, and only
Purpose.
Conditions of exposure detection system in the present embodiment, used wafer can be the wafer for being formed with polysilicon layer, the crystalline substance
The pending etching polysilicon of circle, and photoresist is formed on FEM wafer, and using Focus Exposure Matrix technology to photoresist
It is exposed, referring to Fig. 1, having obtained the pattern array M of repeated arrangement in the photoresist on FEM wafer W；The present embodiment
Conditions of exposure detection system, referring to Fig. 2, including:
CDSEM equipment for scanning the pattern in the pattern array in photoresist, and obtains the seat of scanned pattern
Mark；
Conversion module, the format of the coordinate for converting scanned pattern can be identified by Defect Scanning equipment；
Transmission module, for the coordinate after conversion to be sent to Defect Scanning equipment；
Defect Scanning equipment also includes
Computing module obtains an electronic area for extension centered on the coordinate after converting；Here, referring to Fig. 3, it is electric
Sub-district can by centered on the coordinate after converting the obtained square area D of extension, the side length of square area D can be
3~6 μm.Background area B is around electronic area.
Memory module, for storing Defect Scanning formula；
Input module, what defect threshold value from background area to storage Defect Scanning formula and setting electronics for setting were gone
Defect threshold value；Wherein, the defect threshold value of electronic area is higher than the defect threshold value of background area；Here, the defect threshold value of electronic area can be with
It is twice or more of the defect threshold value of background area；Defect threshold value by setting electronic area is higher than the defect threshold value of background area,
Scanning defective value to avoid subsequent defective scanning device scanning electron area from obtaining is higher than the defect threshold value of electronic area, so that defect
Scanning device is mistakenly considered electronic area and exception occurs, can remove the traditional shortcoming scanning device region scanned in CDSEM equipment
Repetition false alarm.
Detection module, for being scanned to wafer, to obtain the scanning defective value of electronic area and sweeping for the background area
Retouch defective value；Defect Scanning equipment can be optics bright field scanner.
Comparison module, what defect threshold value and electronics for the scanning defective value and background area that compare background area were gone sweeps
Retouch the defect threshold value of defective value and electronic area；
Judgment module judges whether background area is abnormal according to comparison result；
Here, judgment module judges that the scanning defective value of electronic area is lower than the defect threshold value of electronic area, judgment module electronics
Area is normal.
The conditions of exposure detection method of the present embodiment, referring to Fig. 4, the following steps are included:
Step 01: a wafer is provided；Wherein, photoresist is formed on wafer, using Focus Exposure array processes to crystalline substance
Photoresist on circle is exposed, and is formed with pattern array in the photoresist；
It is that those skilled in the art could be aware that, here specifically, being common process about Focus Exposure array processes
It repeats no more.Wafer can be formed with the wafer of polysilicon for surface, that is to say the wafer of pending etching polysilicon.
Step 02: using the pattern in the pattern array in CDSEM equipment scanning photoresist, and obtaining scanned figure
The coordinate of case；
Specifically, CDSEM equipment is during the scanning process, electrons enter photoresist even crystal column surface, form electronics and bang
Hit mark；These positions need to be labeled, and therefore, the present invention obtains the coordinate of scanned pattern by CDSEM equipment, then
An electronic area is formed centered on coordinate, which can be approximated to be electron bombardment mark region.
Step 03: the format of the coordinate of the scanned pattern of conversion can be identified, and send out by Defect Scanning equipment
Give Defect Scanning equipment；
Specifically, routine techniques can be used about the conversion to the obtained coordinate format of CDSEM equipment, here no longer
It repeats.
Step 04: extension obtains an electronic area centered on the coordinate after converting；Wherein, each battle array in pattern array
It is classified as a background area, electronic area is located in background area；
Specifically, electronic area can be the square area centered on the coordinate after converting, preferably, the side of square
A length of 3~6 μm；Background area may be square, include wherein by electronic area.
Step 05: in Defect Scanning formula, setting the defect threshold value of background area, and set the defect threshold value of electronic area
Higher than the defect threshold value of background area；
Specifically, setting the defect threshold value of electronic area as twice or more of the defect threshold value of background area；For example, background area
Defect threshold value be set as 10, the defect threshold value of electronic area is set as 20；
Step 06: wafer being scanned using Defect Scanning equipment, obtains the scanning defective value and the back of electronic area
The scanning defective value at scenic spot；The defect threshold value for comparing the scanning defective value and the background area of background area, sentences according to comparison result
Whether the background area that breaks is abnormal；
Specifically, the scanning defective value due to electronic area is lower than the defect threshold value of electronic area, so Defect Scanning equipment is recognized
It is normally, to avoid Defect Scanning equipment in this way and judge electronic area to be abnormal, to overcome repetition mistake for electronic area
The problem of alarm；Further, it is also possible to scan to obtain the pattern in photoresist according to CDSEM to judge electronic area with the presence or absence of scarce
Fall into, in this way can the defect to electronic area detected in time.
Referring to Fig. 5, the left side is the Defect Scanning schematic diagram of conventional FEM wafer in Fig. 5, the right is this implementation in Fig. 5
The Defect Scanning schematic diagram of the FEM wafer of example；In the Defect Scanning schematic diagram of conventional FEM wafer, image battle array in FEM wafer W1
It arranges in each elementary area of M1 and the defect of same position occurs, cause defect and repeat false alarm problem, and this implementation
Repeated defects have been in the Defect Scanning schematic diagram of the FEM wafer of example, in each elementary area of the pattern matrix M2 of FEM wafer W2
It is eliminated, avoids the problem of defect repeats false alarm.
Although the present invention is disclosed as above with preferred embodiment, the right embodiment illustrate only for the purposes of explanation and
, it is not intended to limit the invention, if those skilled in the art can make without departing from the spirit and scope of the present invention
Dry changes and retouches, and the protection scope that the present invention is advocated should be subject to described in claims.
Claims (10)
1. a kind of conditions of exposure detection method, which comprises the following steps:
Step 01: a wafer is provided；Wherein, photoresist is formed on wafer, using Focus Exposure array manner on wafer
Photoresist exposed, be formed with pattern array in the photoresist；
Step 02: scanning the pattern in the pattern array in the photoresist using CDSEM equipment, and obtain scanned figure
The coordinate of case；
Step 03: the format of the coordinate of the scanned pattern of conversion can be identified, and be sent to by Defect Scanning equipment
The Defect Scanning equipment；
Step 04: extension obtains an electronic area centered on the coordinate after converting；Wherein, each battle array in the pattern array
It is classified as a background area, the electronic area is located in the background area；
Step 05: in Defect Scanning formula, setting the defect threshold value of background area, and the defect threshold value for setting electronic area is higher than
The defect threshold value of the background area；
Step 06: wafer being scanned using Defect Scanning equipment, obtains the scanning defective value and the back of the electronic area
The scanning defective value at scenic spot；The defect threshold value for comparing the scanning defective value and the background area of the background area, is tied according to comparing
Fruit judges whether the background area is abnormal；Wherein, the scanning defective value of the electronic area is lower than the defect threshold value of the electronic area,
The Defect Scanning equipment thinks that the electronic area is normal.
2. conditions of exposure detection method according to claim 1, which is characterized in that the electronic area be with the conversion after
Coordinate centered on square area.
3. conditions of exposure detection method according to claim 2, which is characterized in that the side length of the square area is 3
~6 μm.
4. conditions of exposure detection method according to claim 1, which is characterized in that the defect threshold value of the electronic area is institute
Twice or more for stating the defect threshold value of background area.
5. conditions of exposure detection method according to claim 1, which is characterized in that after the step 04 further include: root
Scan to obtain the pattern in the photoresist according to CDSEM to judge the electronic area with the presence or absence of defect.
6. conditions of exposure detection method according to claim 1, which is characterized in that the wafer is that surface is formed with polycrystalline
The wafer of silicon.
7. a kind of conditions of exposure detection system characterized by comprising
CDSEM equipment for scanning the pattern in the pattern array in photoresist, and obtains the coordinate of scanned pattern；
Conversion module, the format of the coordinate for converting scanned pattern can be identified by Defect Scanning equipment；
Transmission module, for the coordinate after conversion to be sent to Defect Scanning equipment；
Defect Scanning equipment includes
Computing module obtains an electronic area for extension centered on the coordinate after converting；
Memory module, for storing Defect Scanning formula；
Input module, the defect that defect threshold value from background area to storage Defect Scanning formula and setting electronics for setting are gone
Threshold value；Wherein, the defect threshold value of electronic area is higher than the defect threshold value of the background area；
Detection module, for being scanned to wafer, to obtain the scanning defective value of the electronic area and sweeping for the background area
Retouch defective value；
Comparison module, for the scanning defective value of the background area and defect threshold value and the electricity of the background area
The defect threshold value of scanning defective value and the electronic area that son is gone；
Judgment module judges whether the background area is abnormal according to comparison result；Wherein, the judgment module judges the electronics
The scanning defective value in area is lower than the defect threshold value of the electronic area, and electronic area described in the judgment module is normal.
8. conditions of exposure detection system according to claim 7, which is characterized in that the electronic area be with the conversion after
Coordinate centered on square area.
9. conditions of exposure detection system according to claim 7, which is characterized in that the defect threshold value of the electronic area is institute
Twice or more for stating the defect threshold value of background area.
10. conditions of exposure detection system according to claim 7, which is characterized in that the wafer is formed with more for surface
The wafer of crystal silicon.
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| CN103345124A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | Method for confirming photoetching technique window through accurate and quantitative defect detection |
| US20140270468A1 (en) * | 2013-03-12 | 2014-09-18 | Applied Materials Israel, Ltd. | Detection of weak points of a mask |
| CN104198509A (en) * | 2014-09-01 | 2014-12-10 | 上海华力微电子有限公司 | Photomask graphic defect detection system and method |
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2016
- 2016-05-30 CN CN201610370132.2A patent/CN106024665B/en active Active
Patent Citations (4)
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|---|---|---|---|---|
| US20090323036A1 (en) * | 2008-06-25 | 2009-12-31 | Nikon Corporation | Surface position detecting apparatus, exposure apparatus, surface position detecting method, and device manufacturing method |
| US20140270468A1 (en) * | 2013-03-12 | 2014-09-18 | Applied Materials Israel, Ltd. | Detection of weak points of a mask |
| CN103345124A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | Method for confirming photoetching technique window through accurate and quantitative defect detection |
| CN104198509A (en) * | 2014-09-01 | 2014-12-10 | 上海华力微电子有限公司 | Photomask graphic defect detection system and method |
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