CN106024664B - A kind of metal layer film thickness stacks the method and system of model calibration - Google Patents
A kind of metal layer film thickness stacks the method and system of model calibration Download PDFInfo
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- CN106024664B CN106024664B CN201610355194.6A CN201610355194A CN106024664B CN 106024664 B CN106024664 B CN 106024664B CN 201610355194 A CN201610355194 A CN 201610355194A CN 106024664 B CN106024664 B CN 106024664B
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- 239000002184 metal Substances 0.000 title claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000012544 monitoring process Methods 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 57
- 235000012431 wafers Nutrition 0.000 claims description 47
- 230000003595 spectral effect Effects 0.000 claims description 18
- 238000005259 measurement Methods 0.000 claims description 17
- 238000001228 spectrum Methods 0.000 claims description 13
- 238000000227 grinding Methods 0.000 claims description 12
- 239000000284 extract Substances 0.000 claims description 5
- 238000003801 milling Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims 2
- 238000013400 design of experiment Methods 0.000 description 28
- 230000008901 benefit Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
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- Microelectronics & Electronic Packaging (AREA)
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- Mechanical Treatment Of Semiconductor (AREA)
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- General Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses the method and system that a kind of metal layer film thickness stacks model calibration, this method is based on accurate chemical metal layer mechanical lapping model, in model prediction limit of power, by changing the different DOE chip metal thickness degree of mode input parameter prediction, the thickness of monitoring area needed for output, and it is used for spectroscopic calibration process, through the invention, the time of calibration is not only shortened, but also improves the accuracy that film thickness stacks model.
Description
Technical field
The present invention relates to integrated circuit technology manufacturing fields, and the calibration of model is stacked more particularly to a kind of metal layer film thickness
Method and system.
Background technique
Since the difference and unlike material of metal layer different zones pattern density are in CMP (chemically mechanical polishing) technique
Selection causes metal thickness after the completion of wafer chemical mechanical lapping to be unevenly distributed than difference, and metal thickness is uneven tight
Ghost image rings the electric property of interconnection circuit and the progress of subsequent photoetching process.For the variation of effective monitoring metal layer thickness, line
On can after wafer chemical mechanical lapping by monitor monitor pad thickness be wanted to judge whether the wafer meets technique
It asks.
Metal layer thickness film thickness measurement model calibration at this stage is under the premise of process stabilizing ground, according to DOE (Designed
Experiment, contrived experiment method) Wafer (wafers of i.e. different grinding conditions) SEM/TEM (Scanning
Electronic Microscopy/Transmission Electron Microscope, scanning electron microscope/transmission electricity
Sub- microscope) slice value calibration, i.e., the thickness value of monitoring area is obtained by the SEM/TEM slice of actual product.Such as Fig. 1 institute
Show, steps are as follows for metal layer thickness film thickness measurement model calibration method in the prior art: preparing DOE Wafer (DOE wafer)；It receives
Collect DOE Wafer spectral information library；It establishes film thickness and stacks model；Carry out DOE Wafer thickness measure；SEM/TEM slice；Judgement
Cusp position accuracy simultaneously reads slice of data when correct；Judge whether error in measurement is less thanIf error in measurement is small
In, then film thickness stacks model precision and meets the requirements, and calibration is completed, conversely, then needing to re-establish film thickness stacks mould
Type.
It is a large amount of that the metal layer thickness film thickness measurement model calibration method of the prior art has the drawback which needs
Wafer (wafer) slice, the period is long, consumes a large amount of manpower, material resources and financial resources, then the additional slice deformation generated and artificially reads
Deviation, so that data reliability is all had a greatly reduced quality.
In conclusion time-consuming due to using slicing mode that calibration film thickness is gone to stack model at present, investment is big, low efficiency,
Be sliced that the area size checked is limited, then the additional slice deformation generated and the deviation artificially read all to model calibration bring compared with
Big error, therefore, the present invention propose that a kind of accurate chemical metal layer mechanical lapping model of use passes through changing section technique
Parameter obtains a series of technological means of model calibration data, not only shortens the time of calibration, but also improves film thickness stacking
The accuracy of model.
Summary of the invention
In order to overcome the deficiencies of the above existing technologies, purpose of the present invention is to provide a kind of metal layer film thickness to stack mould
The method and system of the calibration of type use accurate chemical metal layer mechanical lapping model to obtain by changing section technological parameter
To a series of model calibration data, the time of calibration is not only shortened, but also improves the accuracy that film thickness stacks model.
In view of the above and other objects, the present invention proposes a kind of method that metal layer film thickness stacks model calibration, this method
It is pre- by changing mode input parameter in model prediction limit of power based on accurate chemical metal layer mechanical lapping model
Different DOE chip metal thickness degree is surveyed, exports the thickness of required monitoring area, and be used for spectroscopic calibration process.
Further, this method comprises the following steps:
Step 1 prepares DOE wafer；
Step 2 collects DOE wafer spectral information library；
Step 3 establishes film thickness and stacks model according to DOE wafer spectral information；
Step 4 is carried out the measurement of DOE wafer thickness, and is predicted using CMP model layout data；
Step 5, extract monitoring area predicted value calibrate film thickness model, comparison DOE wafer thickness measured value and predicted value it
Between difference, according to the result of comparison carry out respective handling.
Further, in step 1, which is obtained by carrying out chemical mechanical grinding after fine tuning some processes parameter
It arrives, wherein the process conditions finely tuned include the pressure or milling time that CMP is respectively walked.
Further, in step 4, carrying out the measurement of DOE wafer thickness is measured using the initial spectrum folded by heap
Different DOE wafers obtains a series of film thickness values undetermined.
Further, in step 4, it is accurately pre- using CMP model for carrying out prediction to layout data using CMP model
The variation of metal layer thickness after the completion of survey metal layer image chemistry mechanical lapping, wherein defeated when utilizing CMP model model prediction
It is consistent with DOE Wafer grinding condition to enter condition.
Further, in step 5, calibration is gone just using the thickness value for the monitoring area predicted by CMP model
Begin spectrometric thickness value, the difference between DOE wafer thickness measured value and predicted value is compared, if the two difference difference is pre-
If in the range of, then it is not necessary to modify film thickness to stack model, conversely, then needing to re-establish film thickness stacking model.
Further, it in step 3, establishes film thickness stacking model and stacks spectrum internal model, be by DOE wafer pair
The reflection signal answered carries out analysis and establishes the metal layer film thickness value that can be used for measuring the identical specific film thickness mobility scale of structure.
Further, identical structure can be Cu Pad structure, Cu Line Array structure or single-layer or multi-layer gold
Belong to the thickness of layer, which is determined by the thickness range of DOE wafer monitoring area.
In order to achieve the above objectives, the present invention also provides a kind of metal layer film thickness to stack model calibration system, comprising:
Preparation unit, for preparing DOE wafer；
Spectral information collector unit, for collecting DOE wafer spectral information library；
Model foundation unit, for establishing film thickness and stacking model according to DOE wafer spectral information；
Thickness measure and predicting unit, for carrying out DOE wafer thickness measurement, and using CMP model to layout data into
Row prediction；
Calibration process unit extracts monitoring area predicted value and calibrates film thickness model, comparison DOE wafer thickness measured value and pre-
Difference between measured value carries out respective handling according to the result of comparison.
Further, which utilizes the thickness value for the monitoring area predicted by CMP model to go to school
The thickness value of quasi- initial spectrum measurement, compares the difference between DOE wafer thickness measured value and predicted value, if the two difference difference
In default range, then it is not necessary to modify film thickness to stack model, conversely, then needing to re-establish film thickness stacking model.
Compared with prior art, a kind of metal layer film thickness of the present invention stacks the method and system of model calibration in metal stratification
It learns in the predictable limit of power of mechanical lapping model, it is practical by simulation DOE (Design of Experiments) Wafer
Chemical mechanical milling tech can quickly be accurately obtained the thickness value of DOE Wafer monitoring area, and be applied to film thickness heap
During folded model calibration, have investment small, time-consuming few advantage, efficiency significantly improves.
Detailed description of the invention
Fig. 1 is the step flow chart that the metal layer film thickness of the prior art stacks the method for model calibration；
Fig. 2 is the step flow chart of the preferred embodiment for the method that a kind of metal layer film thickness of the present invention stacks model calibration；
Fig. 3 is the system architecture diagram that a kind of metal layer film thickness of the present invention stacks model calibration system.
Specific embodiment
Below by way of specific specific example and embodiments of the present invention are described with reference to the drawings, those skilled in the art can
Understand further advantage and effect of the invention easily by content disclosed in the present specification.The present invention can also pass through other differences
Specific example implemented or applied, details in this specification can also be based on different perspectives and applications, without departing substantially from
Various modifications and change are carried out under spirit of the invention.
Fig. 2 is the step flow chart of the preferred embodiment for the method that a kind of metal layer film thickness of the present invention stacks model calibration.
As shown in Fig. 2, the method that a kind of metal layer film thickness of the present invention stacks model calibration, is based on accurate chemical metal layer mechanical lapping
Model, in model prediction limit of power, by changing mode input parameter (simulating the grinding condition of DOE Wafer) prediction
Different DOE Wafer metal layer thickness, exports the thickness of required monitoring area, and be used for spectroscopic calibration process, tool
Body includes the following steps:
Step 201, prepare DOE Wafer (DOE wafer).The DOE Wafer is laggard by fine tuning some processes parameter
Row chemical mechanical grinding obtains, wherein the process conditions finely tuned include: CMP (Chemical Mechanical
Planarization pressure or milling time for) respectively walking etc.
Step 202, DOE Wafer spectral information library is collected.
Step 203, it according to DOE Wafer spectral information, establishes film thickness and stacks model.Spectrum internal model is stacked,
It can be used for measuring the identical specific film thickness mobility scale of structure by the way that the corresponding reflection signal of DOE Wafer is carried out analysis foundation
Metal layer film thickness value, identical structure here can be Cu Pad structure, Cu Line Array structure or single layer or more
The thickness of layer metal layer, specific film thickness mobility scale is determined by the thickness range of DOE Wafer monitoring area.
Step 204, DOE Wafer thickness measure is carried out, and layout data is predicted using CMP model.This step
In, carrying out DOE Wafer thickness measure is to measure different DOE Wafer using the initial spectrum folded by heap, obtains one
Series film thickness value undetermined, predicts layout data using CMP model, that is, utilizes CMP model Accurate Prediction metal layer figure
The variation of metal layer thickness after the completion of shape chemical mechanical grinding, wherein utilizing the input condition and DOE when CMP model model prediction
Wafer grinding condition is consistent.
Step 205, it extracts monitoring area predicted value and calibrates film thickness model.That is, utilizing the prison predicted by CMP model
The thickness value in control region removes the thickness value of calibration initial spectrum measurement, if the two difference is in a certain range, it is not necessary to modify
Film thickness stacks model, conversely, then needing to re-establish film thickness stacking model.
Step 206, the difference between DOE Wafer thickness measure and predicted value is compared, if the two difference is less than default threshold
Value, such as, then film thickness stacks model precision and meets the requirements, conversely, then needing to re-establish film thickness stacks model.
Fig. 3 is the system architecture diagram that a kind of metal layer film thickness of the present invention stacks model calibration system.As shown in figure 3, this hair
A kind of bright metal layer film thickness stacks model calibration system, comprising: preparation unit 301, spectral information collector unit 302, model are built
Vertical unit 303, thickness measure and predicting unit 304, calibration and processing unit 305.
Wherein, for preparation unit 301 for preparing DOE Wafer, which is by after fine tuning some processes parameter
Carry out what chemical mechanical grinding obtained, wherein the process conditions finely tuned include: CMP (Chemical Mechanical
Planarization pressure or milling time for) respectively walking etc..
Spectral information collector unit 302 establishes spectral information library for collecting DOE Wafer spectral information.
Model foundation unit 303, for establishing film thickness and stacking model according to DOE Wafer spectral information.Stack spectrum
Internal model establishes that can be used for measuring identical structure specific by the way that the corresponding reflection signal of DOE Wafer is carried out analysis
The metal layer film thickness value of film thickness mobility scale, identical structure here can be Cu Pad (copper packing) structure, Cu Line
The thickness of Array (copper wire array) structure or single-layer or multi-layer metal layer, specific film thickness mobility scale are supervised by DOE Wafer
Control the thickness range decision in region.
Thickness measure and predicting unit 304, for carrying out DOE Wafer thickness measure, and using CMP model to domain number
According to being predicted.Here carrying out DOE Wafer thickness measure is to measure different DOE using the initial spectrum folded by heap
Wafer, obtains a series of film thickness values undetermined, is predicted using CMP model layout data, i.e., accurate using CMP model
The variation of metal layer thickness after the completion of prediction metal layer image chemistry mechanical lapping, wherein when utilizing CMP model model prediction
Input condition is consistent with DOE Wafer grinding condition.
Calibration and processing unit 305 compare DOE wafer thickness for extracting monitoring area predicted value calibration film thickness model
Difference between measured value and predicted value, and respective handling is carried out according to the result of comparison.That is, 305 benefit of calibration and processing unit
The thickness value that calibration initial spectrum measurement is gone with the thickness value for the monitoring area predicted by CMP model, compares DOE wafer
Difference between thickness measurements and predicted value, if the two difference is less than preset threshold, such as, then judge that film thickness stacks
Model precision meets the requirements, conversely, then needing to re-establish film thickness stacks model.
In conclusion a kind of metal layer film thickness of the present invention stacks the method and system of model calibration in chemical metal layer machinery
It grinds in the predictable limit of power of model, passes through the practical chemical machine of simulation DOE (Design of Experiments) Wafer
Tool grinding technics can quickly be accurately obtained the thickness value of DOE Wafer monitoring area, and be applied to film thickness and stack model
In calibration process, have investment small, time-consuming few advantage, efficiency significantly improves.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.Any
Without departing from the spirit and scope of the present invention, modifications and changes are made to the above embodiments by field technical staff.Therefore,
The scope of the present invention, should be as listed in the claims.
Claims (10)
1. a kind of method that metal layer film thickness stacks model calibration, it is characterised in that: this method is based on accurate chemical metal layer
Mechanical lapping model, in model prediction limit of power, by changing the different DOE chip metal layer of mode input parameter prediction
Thickness, exports the thickness of required monitoring area, and is used for spectroscopic calibration process.
2. the method that a kind of metal layer film thickness as described in claim 1 stacks model calibration, which is characterized in that this method includes
Following steps:
Step 1 prepares DOE wafer；
Step 2 collects DOE wafer spectral information library；
Step 3 establishes film thickness and stacks model according to DOE wafer spectral information；
Step 4 is carried out the measurement of DOE wafer thickness, and is predicted using CMP model layout data；
Step 5 extracts monitoring area predicted value and calibrates film thickness model, compares between DOE wafer thickness measured value and predicted value
Difference carries out respective handling according to the result of comparison.
3. the method that a kind of metal layer film thickness as claimed in claim 2 stacks model calibration, it is characterised in that: in step 1
In, the DOE wafer is by carrying out what chemical mechanical grinding obtained after fine tuning some processes parameter, wherein the process conditions packet finely tuned
Include the pressure or milling time that CMP is respectively walked.
4. the method that a kind of metal layer film thickness as claimed in claim 2 stacks model calibration, it is characterised in that: in step 4
In, carrying out the measurement of DOE wafer thickness is to measure different DOE wafers using the initial spectrum folded by heap, is obtained a series of
Film thickness value undetermined.
5. the method that a kind of metal layer film thickness as claimed in claim 4 stacks model calibration, it is characterised in that: in step 4
In, it is complete using the chemistry mechanical lapping of CMP model Accurate Prediction metal layer image for carrying out prediction to layout data using CMP model
At the variation of rear metal layer thickness, wherein input condition when being predicted using CMP model is consistent with DOE Wafer grinding condition.
6. the method that a kind of metal layer film thickness as claimed in claim 5 stacks model calibration, it is characterised in that: in step 5
In, the thickness value of calibration initial spectrum measurement, comparison are gone using the thickness value for the monitoring area predicted by CMP model
Difference between DOE wafer thickness measured value and predicted value, if the two difference is in default range, it is not necessary to modify film thickness heaps
Folded model, conversely, then needing to re-establish film thickness stacking model.
7. the method that a kind of metal layer film thickness as claimed in claim 2 stacks model calibration, it is characterised in that: in step 3
In, establish film thickness stack model stacks spectrum internal model, be the corresponding reflection signal of DOE wafer is carried out analyze foundation can
With the metal layer film thickness value for measuring identical structure special metal tunic thickness mobility scale.
8. the method that a kind of metal layer film thickness as claimed in claim 7 stacks model calibration, it is characterised in that: identical structure
It can be the thickness of Cu Pad structure, Cu Line Array structure or single-layer or multi-layer metal layer, the special metal tunic is thick
Mobility scale is determined by the thickness range of DOE wafer monitoring area.
9. a kind of metal layer film thickness stacks model calibration system, comprising:
Preparation unit, for preparing DOE wafer；
Spectral information collector unit, for collecting DOE wafer spectral information library；
Model foundation unit, for establishing film thickness and stacking model according to DOE wafer spectral information；
Thickness measure and predicting unit carry out in advance layout data for carrying out DOE wafer thickness measurement, and using CMP model
It surveys；
Calibration process unit extracts monitoring area predicted value and calibrates film thickness model, compares DOE wafer thickness measured value and predicted value
Between difference, according to the result of comparison carry out respective handling.
10. a kind of metal layer film thickness as claimed in claim 9 stacks model calibration system, it is characterised in that: the calibration process
Unit utilizes the thickness value for the monitoring area predicted by CMP model to remove the thickness value of calibration initial spectrum measurement, compares
Difference between DOE wafer thickness measured value and predicted value, if the two difference difference is in default range, it is not necessary to modify films
Thickness stacks model, conversely, then needing to re-establish film thickness stacking model.
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| CN101299150A (en) * | 2007-05-03 | 2008-11-05 | 台湾积体电路制造股份有限公司 | Method for monitoring and predicting wafer flatness and method for manufacturing semiconductor wafer |
| CN101540270A (en) * | 2008-03-20 | 2009-09-23 | 华亚科技股份有限公司 | Systems and methods for monitoring a process |
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| JP6050571B2 (en) * | 2011-08-09 | 2016-12-21 | 株式会社荏原製作所 | Polishing monitoring method and polishing apparatus |
| US9163928B2 (en) * | 2013-04-17 | 2015-10-20 | Kla-Tencor Corporation | Reducing registration error of front and back wafer surfaces utilizing a see-through calibration wafer |
| CN105225979A (en) * | 2014-06-19 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor device processing procedure prognoses system and method |
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| CN101299150A (en) * | 2007-05-03 | 2008-11-05 | 台湾积体电路制造股份有限公司 | Method for monitoring and predicting wafer flatness and method for manufacturing semiconductor wafer |
| CN101540270A (en) * | 2008-03-20 | 2009-09-23 | 华亚科技股份有限公司 | Systems and methods for monitoring a process |
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