CN106019112A - Full-bridge test system preventing insulated gate bipolar transistor (IGBT) from burnout - Google Patents
Full-bridge test system preventing insulated gate bipolar transistor (IGBT) from burnout Download PDFInfo
- Publication number
- CN106019112A CN106019112A CN201610340338.0A CN201610340338A CN106019112A CN 106019112 A CN106019112 A CN 106019112A CN 201610340338 A CN201610340338 A CN 201610340338A CN 106019112 A CN106019112 A CN 106019112A
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- China
- Prior art keywords
- igbt
- test system
- power
- burnout
- full
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 claims abstract description 23
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000009434 installation Methods 0.000 abstract description 3
- 238000005070 sampling Methods 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
A full-bridge test system preventing an IGBT from burnout comprises a transparent acrylic casing, a touch control display panel, a 220V power lead and plug, a 12V power module, a control mainboard, an IGBT power panel, a signal and load board and an interboard connecting line. A 12V low voltage power supply supplies power to a full bridge loop of the test system, an analog load serves as a resistor, sampling signals are output in an analog manner by a single-chip microcomputer, normal operation of the test system is ensured, and whether different electronic components are sound is detected to prevent the IGBT from burnout. According to the invention ,low-voltage test is used to determine whether the work state of full bridge is good and whether PCB performance is qualified, the IGBT is prevented from burnout, unnecessary production cost is saved, use and installation are convenient, the stability is high, and the cost is lower.
Description
Technical field
The present invention relates to a kind of test system, the full-bridge test that a kind of anti-insulated gate bipolar transistor burns is
System.
Background technology
At present, electromagnetic heating technique has been applied in water heater aspect, and its use allows the security performance of electric heater obtain
To a qualitative leap；Existing electromagnetic heating technique scheme typically can use insulated gate bipolar transistor to come also known as IGBT
Control output, to reach the purpose of frequency modulation Power Regulation.But easily there is various problem in the restriction because of production technology during volume production,
And cause IGBT to burn.The most thereon to its low voltage experiment stability before electricity, it appears most important.
Summary of the invention
The technical problem to be solved, it is simply that the full-bridge providing a kind of anti-insulated gate bipolar transistor to burn is surveyed
Test system, its use, easy for installation, good stability, cost is relatively low.
The technical scheme used for the above-mentioned technical problem present invention of solution is as follows: a kind of anti-insulated gate bipolar crystal
The full-bridge test system that pipe burns includes: transparent acrylic shell, touch control display plate, 220V power lead and plug, 12V power supply
Connecting line between module, control mainboard, IGBT power amplifier board, signal and load board and plate.
Test noted above system full-bridge loop is powered by 12V low-tension supply, and fictitious load is resistance, each sampled signal
Exported by single-chip simulation, it is ensured that test system is properly functioning, detect each electronic component the most well to stop IGBT demolition.
The gain effect of the present invention: judging that full-bridge duty is the best by low voltage experiment, whether pcb board performance closes
Lattice, it is to avoid IGBT burns, save unnecessary production cost；And its use, easy for installation, good stability, cost is relatively low.
Accompanying drawing explanation
The present invention is further described with embodiment below in conjunction with the accompanying drawings.
Fig. 1 is the structure sketch of the present invention.
1. transparent acrylic shell in Fig. 1,2. touch control display plate, 3.220V power lead and plug, 4.12V power supply mould
Block, 5. controls mainboard, 6.IGBT power amplifier board, 7. signal and load board, 8. connecting line between plate.
In embodiment shown in Fig. 1, this test system includes transparent acrylic shell (1), touch control display plate (2), 220V
Power lead and plug (3), 12V power module (4), control mainboard (5), IGBT power amplifier board (6), signal and load board (7) and
Connecting line (8) between plate.
Described test system is completed touch control display plate (2), 12V power module (4) by connecting line (8) between plate, is controlled
Mainboard (5), IGBT power amplifier board (6) and signal and the interconnection of load board (7).
Described test system is completed power supply powered by 220V power lead and plug (3) thereof.
Described test system simulates main circuit power supply state by 12V power module (4), by arranging touch control display plate
(2) adjustment completing to control mainboard (5) running status controls, it is ensured that whole system can be properly functioning.
Described test system, by substituting detection IGBT or mainboard PCB, simulates each components and parts operating mode, according to IGBT
Heat condition, i.e. can determine whether whether testing circuit exists exception, and then stops IGBT and burn.
Claims (5)
1. the full-bridge test system that an anti-insulated gate bipolar transistor burns, it is characterised in that it includes outside transparent acrylic
Shell, touch control display plate, 220V power lead and plug, 12V power module, control mainboard, IGBT power amplifier board, signal and load board
And connecting line between plate.
Test system the most according to claim 1, it is characterised in that: it is to complete touch-control by connecting line between plate (8) to show
Show plate, 12V power module, control mainboard, IGBT power amplifier board and signal and the interconnection of load board.
Test system the most according to claim 1, it is characterised in that: it is to be completed by 220V power lead and plug thereof
Power supply is powered.
Test system the most according to claim 1, it is characterised in that: it is that 12V power module simulates main circuit power supply shape
State, the adjustment completing to control mainboard running status by arranging touch control display plate controls, it is ensured that whole system can be properly functioning.
Test system the most according to claim 1, it is characterised in that: it is by substituting detection IGBT or mainboard PCB,
Simulate each components and parts operating mode, according to IGBT heat condition, i.e. can determine whether whether testing circuit exists exception, and then stop IGBT
Burn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610340338.0A CN106019112A (en) | 2016-05-21 | 2016-05-21 | Full-bridge test system preventing insulated gate bipolar transistor (IGBT) from burnout |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610340338.0A CN106019112A (en) | 2016-05-21 | 2016-05-21 | Full-bridge test system preventing insulated gate bipolar transistor (IGBT) from burnout |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106019112A true CN106019112A (en) | 2016-10-12 |
Family
ID=57095328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610340338.0A Pending CN106019112A (en) | 2016-05-21 | 2016-05-21 | Full-bridge test system preventing insulated gate bipolar transistor (IGBT) from burnout |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106019112A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201562034U (en) * | 2009-10-20 | 2010-08-25 | 美的集团有限公司 | Circuit for short-circuit protection and working frequency tracking detection under static state of IGBT |
| JP2010276477A (en) * | 2009-05-28 | 2010-12-09 | Fuji Electric Systems Co Ltd | Semiconductor chip test apparatus and test method |
| CN102361319A (en) * | 2011-10-25 | 2012-02-22 | 杭州日鼎控制技术有限公司 | IGBT (Insulated Gate Bipolar Translator) short circuit protection detection circuit based on driving chip |
| CN103105572A (en) * | 2013-01-25 | 2013-05-15 | 北京金风科创风电设备有限公司 | Device for testing IGBT module |
| CN103969568A (en) * | 2014-05-27 | 2014-08-06 | 北京天源科创风电技术有限责任公司 | IGBT (Insulated Gate Bipolar Transistor) integration module testing method |
-
2016
- 2016-05-21 CN CN201610340338.0A patent/CN106019112A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010276477A (en) * | 2009-05-28 | 2010-12-09 | Fuji Electric Systems Co Ltd | Semiconductor chip test apparatus and test method |
| CN201562034U (en) * | 2009-10-20 | 2010-08-25 | 美的集团有限公司 | Circuit for short-circuit protection and working frequency tracking detection under static state of IGBT |
| CN102361319A (en) * | 2011-10-25 | 2012-02-22 | 杭州日鼎控制技术有限公司 | IGBT (Insulated Gate Bipolar Translator) short circuit protection detection circuit based on driving chip |
| CN103105572A (en) * | 2013-01-25 | 2013-05-15 | 北京金风科创风电设备有限公司 | Device for testing IGBT module |
| CN103969568A (en) * | 2014-05-27 | 2014-08-06 | 北京天源科创风电技术有限责任公司 | IGBT (Insulated Gate Bipolar Transistor) integration module testing method |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161012 |