CN105990509A - High thermal conductivity light emitting diode - Google Patents
High thermal conductivity light emitting diode Download PDFInfo
- Publication number
- CN105990509A CN105990509A CN201510052453.3A CN201510052453A CN105990509A CN 105990509 A CN105990509 A CN 105990509A CN 201510052453 A CN201510052453 A CN 201510052453A CN 105990509 A CN105990509 A CN 105990509A
- Authority
- CN
- China
- Prior art keywords
- heat
- light
- conducting
- plate body
- heat conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000835 fiber Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 6
- 239000004917 carbon fiber Substances 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 229920001568 phenolic resin Polymers 0.000 claims description 4
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- 238000009941 weaving Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000004634 thermosetting polymer Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims 1
- 229920000914 Metallic fiber Polymers 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 238000005275 alloying Methods 0.000 claims 1
- 210000003850 cellular structure Anatomy 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000005087 graphitization Methods 0.000 claims 1
- 239000004033 plastic Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- -1 polysilicone Polymers 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 15
- 229910002601 GaN Inorganic materials 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005187 foaming Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000007849 furan resin Substances 0.000 description 3
- 229920001169 thermoplastic Polymers 0.000 description 3
- 229910002065 alloy metal Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002134 carbon nanofiber Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- 238000010097 foam moulding Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
技术领域technical field
本发明涉及一种发光二极体,特别是涉及一种高导热发光二极体。The invention relates to a light-emitting diode, in particular to a light-emitting diode with high thermal conductivity.
背景技术Background technique
参阅图1,现有的发光二极体1,以水平式发光二极体为例说明,主要包含一蓝宝石基板11、一设置于该蓝宝石基板11上的发光单元12,及两电极单元13。Referring to FIG. 1 , the existing light-emitting diode 1 , taking a horizontal light-emitting diode as an example, mainly includes a sapphire substrate 11 , a light-emitting unit 12 disposed on the sapphire substrate 11 , and two electrode units 13 .
该发光单元12包括一形成于该蓝宝石基板11表面的n型氮化镓(n-GaN)层121、一盖设于该n型氮化镓(n-GaN)层121的一表面的多重量子层(MQW)122,及一盖设于该多重量子层(MQW)122表面的p型氮化镓(p-GaN)层。该电极单元13包括一设置该p型氮化镓(p-GaN)层的顶电极,及一设置该n型氮化镓层的底电极。当自该电极单元13通入一电流时,驱动该p型氮化镓(p-GaN)层123的数个电洞与该n型氮化镓(n-GaN)层121的数个电子于该多重量子层(MQW)122内结合而发光。然而,由于该发光单元12发光时产生巨幅的热能,且该蓝宝石基板11的热传系数(thermal conductivity)低(约40W/m·K),导致散热效果差,而降低了该发光二极体1整体的发光效率。The light-emitting unit 12 includes an n-type gallium nitride (n-GaN) layer 121 formed on the surface of the sapphire substrate 11, a multi-quantum layer covering a surface of the n-type gallium nitride (n-GaN) layer 121. layer (MQW) 122, and a p-type gallium nitride (p-GaN) layer covering the surface of the multiple quantum layer (MQW) 122 . The electrode unit 13 includes a top electrode with the p-type gallium nitride (p-GaN) layer, and a bottom electrode with the n-type gallium nitride layer. When a current is passed through the electrode unit 13, the holes in the p-type gallium nitride (p-GaN) layer 123 and the electrons in the n-type gallium nitride (n-GaN) layer 121 are driven to The multiple quantum layers (MQW) 122 combine to emit light. However, since the light-emitting unit 12 generates a huge amount of heat when it emits light, and the sapphire substrate 11 has a low thermal conductivity (about 40W/m·K), the heat dissipation effect is poor, and the light-emitting diode is reduced. The luminous efficiency of body 1 as a whole.
为了解决蓝宝石基板的散热问题,如美国第US8809898B2核准公告号发明专利案,公开一种垂导式发光二极体的制作方法,主要是利用基板转移的方式,将蓝宝石基板转换成散热性佳的金属基板,以提升散热效率。然而,利用基板转移的过程使得制程较为繁复,且须使用激光剥离(laser lift-off)移除该蓝宝石基板,也提高制造成本,且置换后的该金属基板也会增加额外的重量。In order to solve the heat dissipation problem of the sapphire substrate, such as the invention patent case of US8809898B2 Approval Announcement, a manufacturing method of a vertical light-emitting diode is disclosed, which mainly uses the substrate transfer method to convert the sapphire substrate into a good heat dissipation Metal substrate to improve heat dissipation efficiency. However, using the substrate transfer process makes the manufacturing process more complicated, and the sapphire substrate must be removed by laser lift-off, which also increases the manufacturing cost, and the replaced metal substrate will also add extra weight.
经上述说明可知,如何解决发光二极体的散热问题以提升发光效率,且同时避免使用该金属基板以降低重量与制造成本是此技术领域的相关技术人员所待突破的难题。From the above description, it can be seen that how to solve the problem of heat dissipation of the light-emitting diode to improve the luminous efficiency, and at the same time avoid using the metal substrate to reduce the weight and manufacturing cost is a difficult problem for those skilled in the art to break through.
发明内容Contents of the invention
本发明的目的在于提供一种高导热发光二极体。The object of the present invention is to provide a light-emitting diode with high thermal conductivity.
本发明高导热发光二极体,包含一导热基板、一发光单元,及一电极单元。该导热基板包括一板本体与数个分散于该板本体的导热纤维。该板本体具有一基面,及一反向于该基面的底面。所述导热纤维的至少一部分会裸露于该板本体外。该发光单元设置于该板本体的基面上。该电极单元与该发光单元电连接,用于提供电能使该发光单元发光。The high thermal conductivity light-emitting diode of the present invention includes a heat-conductive substrate, a light-emitting unit, and an electrode unit. The heat conduction substrate includes a board body and several heat conduction fibers dispersed on the board body. The board body has a base surface and a bottom surface opposite to the base surface. At least a part of the heat conducting fiber is exposed outside the board body. The light emitting unit is arranged on the base surface of the board body. The electrode unit is electrically connected with the light-emitting unit for providing electric energy to make the light-emitting unit emit light.
较佳地,前述高导热发光二极体,其中所述导热纤维是以交错编织方式排列并具有多孔性结构。Preferably, in the aforementioned high thermal conductivity light-emitting diode, the thermal conductive fibers are arranged in a staggered weaving manner and have a porous structure.
较佳地,前述高导热发光二极体,其中所述导热纤维自该基面裸露。Preferably, in the aforementioned high thermal conductivity light-emitting diode, the thermal conductive fibers are exposed from the base surface.
较佳地,前述高导热发光二极体,其中所述导热纤维自该底面裸露而直接与外界接触。Preferably, in the aforementioned high thermal conductivity light-emitting diode, the thermal conductive fiber is exposed from the bottom surface and directly contacts with the outside.
较佳地,前述高导热发光二极体,其中该板本体还具有数个彼此间隔的支撑块,所述导热纤维分布于所述支撑块间,并自所述支撑块的间隙露出。Preferably, the above-mentioned high thermal conductivity light-emitting diode, wherein the board body further has several support blocks spaced apart from each other, the thermal conductive fibers are distributed among the support blocks and exposed from the gaps of the support blocks.
较佳地,前述高导热发光二极体,其中所述导热纤维是沿一个与该发光单元实质垂直的方向排列分布于该板本体。Preferably, in the aforementioned high thermal conductivity light emitting diode, the thermal conductive fibers are arranged and distributed on the board body along a direction substantially perpendicular to the light emitting unit.
较佳地,前述高导热发光二极体,其中所述导热纤维的导热系数介于380至2000W/m·K。Preferably, in the aforementioned high thermal conductivity light-emitting diode, the thermal conductivity of the thermal conductive fiber is between 380 and 2000 W/m·K.
较佳地,前述高导热发光二极体,其中所述导热纤维选自金属纤维、高导热碳纤维,或石墨化气相沉积碳纤维。Preferably, in the aforementioned high thermal conductivity light-emitting diode, the thermal conductive fibers are selected from metal fibers, high thermal conductive carbon fibers, or graphitized vapor deposition carbon fibers.
较佳地,前述高导热发光二极体,其中该板本体选自金属、合金金属、热固性高分子或热塑性高分子。Preferably, in the aforementioned high thermal conductivity light-emitting diode, the plate body is selected from metal, alloy metal, thermosetting polymer or thermoplastic polymer.
较佳地,前述高导热发光二极体,其中该板本体的构成材料选自下列群组其中一种:银、铝、铜、锡、锑、氧化铝合金、酚醛树脂、呋喃树脂、聚硅氧树脂、环氧树脂。Preferably, the above-mentioned high thermal conductivity light-emitting diode, wherein the constituent material of the board body is selected from one of the following groups: silver, aluminum, copper, tin, antimony, aluminum oxide, phenolic resin, furan resin, polysilicon Oxygen resin, epoxy resin.
较佳地,前述高导热发光二极体,其中该板本体具有数个孔洞,所述导热纤维自所述孔洞部分裸露。Preferably, in the aforementioned high thermal conductivity light-emitting diode, the board body has several holes, and the heat-conducting fibers are partially exposed from the holes.
较佳地,前述高导热发光二极体,其中该发光单元包括一个设置于该导热基板上的第一型半导体层、一个形成于该第一型半导体层上的主动层,及一个盖设该主动层上的第二型半导体层,该电极单元具有一个介于该导热基板与该发光单元间的底电极,及一个位于该发光单元的一个顶面的顶电极。Preferably, the above-mentioned high thermal conductivity light-emitting diode, wherein the light-emitting unit includes a first-type semiconductor layer disposed on the heat-conductive substrate, an active layer formed on the first-type semiconductor layer, and a cover covering the The second-type semiconductor layer on the active layer, the electrode unit has a bottom electrode between the heat-conducting substrate and the light-emitting unit, and a top electrode located on a top surface of the light-emitting unit.
较佳地,前述高导热发光二极体,其中该发光单元包括一个设置于该导热基板上的第一型半导体层、一个部分盖设于该第一型半导体层上的主动层,及一个盖设该主动层上的第二型半导体层,该电极单元具有一个形成于该第一型半导体层的一表面的底电极,及一个形成于该第二型半导体层的一表面的顶电极。Preferably, the above-mentioned high thermal conductivity light-emitting diode, wherein the light-emitting unit includes a first-type semiconductor layer disposed on the heat-conductive substrate, an active layer partially covered on the first-type semiconductor layer, and a cover Assuming the second type semiconductor layer on the active layer, the electrode unit has a bottom electrode formed on a surface of the first type semiconductor layer, and a top electrode formed on a surface of the second type semiconductor layer.
本发明的有益效果在于:通过该导热基板的所述导热纤维将该发光单元发光时所产生的热能导离该发光单元,以提升发光效率。The beneficial effect of the present invention is that: the thermal energy generated when the light-emitting unit emits light is guided away from the light-emitting unit through the heat-conducting fiber of the heat-conducting substrate, so as to improve the light-emitting efficiency.
附图说明Description of drawings
图1是一示意图,说明一种现有的发光二极体;FIG. 1 is a schematic diagram illustrating a conventional light-emitting diode;
图2是一示意图,说明本发明高导热发光二极体的一第一实施例;Fig. 2 is a schematic diagram illustrating a first embodiment of the high thermal conductivity light-emitting diode of the present invention;
图3是一立体示意图,说明该第一实施例的数个导热纤维于该板本体中的排列态样;Fig. 3 is a three-dimensional schematic diagram illustrating the arrangement of several heat-conducting fibers in the board body of the first embodiment;
图4是一立体示意图,说明所述导热纤维于该板本体中的另一排列态样;Fig. 4 is a schematic perspective view illustrating another arrangement of the heat-conducting fibers in the board body;
图5是一示意图,说明该第一实施例的一垂直导通态样;FIG. 5 is a schematic diagram illustrating a vertical conduction state of the first embodiment;
图6是一示意图,说明所述导热基板的另一态样;及Figure 6 is a schematic diagram illustrating another aspect of the thermally conductive substrate; and
图7是一示意图,说明该第二实施例的板本体。FIG. 7 is a schematic diagram illustrating the board body of the second embodiment.
具体实施方式detailed description
下面结合附图及实施例对本发明进行详细说明。The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
参阅图2并配合图3与图4,本发明高导热发光二极体的一第一实施例包含一导热基板2、一发光单元3,及一电极单元4。Referring to FIG. 2 together with FIG. 3 and FIG. 4 , a first embodiment of the high thermal conductivity light-emitting diode of the present invention includes a heat-conductive substrate 2 , a light-emitting unit 3 , and an electrode unit 4 .
该导热基板2包括一板本体21与数条分散于该板本体21的导热纤维22。该板本体21具有一基面211,及一反向于该基面211的底面212。该板本体21的构成材料选自金属、合金金属,热固性高分子或热塑性高分子,例如但不限于选自下列群组其中一种:银、铝、铜、锡、锑、氧化铝合金、酚醛树脂、呋喃树脂、聚硅氧树脂、环氧树脂。且所述导热纤维22的至少一部分会裸露于该板本体21外。The heat-conducting substrate 2 includes a board body 21 and several heat-conducting fibers 22 scattered on the board body 21 . The board body 21 has a base surface 211 and a bottom surface 212 opposite to the base surface 211 . The material of the plate body 21 is selected from metals, alloy metals, thermosetting polymers or thermoplastic polymers, such as but not limited to one of the following groups: silver, aluminum, copper, tin, antimony, aluminum oxide, phenolic resin, furan resin, silicone resin, epoxy resin. And at least a part of the heat conducting fiber 22 is exposed outside the board body 21 .
所述导热纤维22是选自导热系数不小于380W/m·K的纤维,适用于该第一实施例的导热纤维22的导热系数介于380~2000W/m·K,选自金属纤维(metal fiber)、高导热碳纤维(high thermalconductivity carbon fiber),或石墨化气相沉积碳纤维(Graphitized VGCF)。The thermally conductive fiber 22 is selected from fibers with a thermal conductivity not less than 380W/m·K, and the thermally conductive fiber 22 suitable for the first embodiment has a thermal conductivity between 380 and 2000W/m·K, and is selected from metal fibers (metal fiber), high thermal conductivity carbon fiber (high thermal conductivity carbon fiber), or graphitized vapor deposition carbon fiber (Graphitized VGCF).
详细的说,所述导热纤维22可以是是沿一个与该发光单元3实质垂直的方向排列分布于该板本体21;亦可以是以交错编织方式排列并具有多孔性结构,例如但不限于如图3所示,以交错编织的方式分布于该板本体21(图3中该板本体21是以点划线表示),或是如图4所示,沿一实质垂直于第一型半导体层31的垂直方向Z延伸。其中,当所述导热纤维22是以交错叠置的方式沿一垂直方向Z堆叠(如图3所示)时,所述导热纤维22于X-Y平面方向排列会具有最佳的导热效果;而当所述导热纤维22是沿该垂直方向Z延伸,则该导热基板2在该垂直方向Z具有极佳的导热性。较佳地,该导热基板2于沿所述导热纤维22的排列方向的导热系数不小于300W/m·K。In detail, the heat-conducting fibers 22 can be arranged and distributed on the board body 21 along a direction substantially perpendicular to the light-emitting unit 3; they can also be arranged in a staggered weaving manner and have a porous structure, such as but not limited to As shown in FIG. 3 , it is distributed on the board body 21 in a staggered weaving manner (the board body 21 is indicated by a dotted line in FIG. 3 ), or as shown in FIG. 4 , along a line substantially perpendicular to the first type semiconductor layer. The vertical direction Z of 31 extends. Wherein, when the heat-conducting fibers 22 are stacked along a vertical direction Z in a staggered manner (as shown in FIG. 3 ), the heat-conducting fibers 22 arranged in the X-Y plane direction will have the best heat conduction effect; and when The thermally conductive fibers 22 extend along the vertical direction Z, and the thermally conductive substrate 2 has excellent thermal conductivity in the vertical direction Z. Preferably, the thermal conductivity of the thermally conductive substrate 2 along the arrangement direction of the thermally conductive fibers 22 is not less than 300 W/m·K.
更具体的说,所述导热纤维22可自该板本体21的任意处露出该板本体21外而直接与外界接触,以增加该导热基板2整体的散热性,较佳地,所述导热纤维22可分别自该板本体21的基面211、底面212,或同时自该板本体21的基面211及底面212对外裸露。当所述导热纤维22自该板本体21的基面211裸露时,该发光单元3能与所述导热纤维22直接接触,加速将该发光单元3所产生的热能导至该导热基板2;当所述导热纤维22自该板本体21的底面212裸露时,能提升将热能自该导热基板2导离该发光单元3并逸散至外界的效率;更佳地,所述导热纤维22亦能同时自该板本体21的基面211与底面212裸露,则可进一步加强导热及散热效果。于本实施例中是以所述导热纤维22为如图3所示,成多层叠置排列分布于该板本体21,并分别自该板本体21的该基面211及该底面212裸露为例做说明。More specifically, the heat-conducting fiber 22 can be exposed from any part of the board body 21 to directly contact the outside world, so as to increase the heat dissipation of the heat-conducting substrate 2 as a whole. Preferably, the heat-conducting fiber 22 can be exposed from the base surface 211 and the bottom surface 212 of the board body 21 respectively, or from the base surface 211 and the bottom surface 212 of the board body 21 at the same time. When the heat-conducting fiber 22 is exposed from the base surface 211 of the board body 21, the light-emitting unit 3 can be in direct contact with the heat-conducting fiber 22, accelerating the conduction of heat energy generated by the light-emitting unit 3 to the heat-conducting substrate 2; When the heat-conducting fibers 22 are exposed from the bottom surface 212 of the board body 21, the efficiency of conducting heat energy from the heat-conducting substrate 2 away from the light-emitting unit 3 and dissipating to the outside can be improved; more preferably, the heat-conducting fibers 22 can also At the same time, the base surface 211 and the bottom surface 212 of the board body 21 are exposed, so that the heat conduction and heat dissipation effects can be further enhanced. In this embodiment, as shown in FIG. 3 , the heat-conducting fibers 22 are stacked and arranged in multiple layers and distributed on the board body 21 , and are respectively exposed from the base surface 211 and the bottom surface 212 of the board body 21 as an example. Explain.
该发光单元3设置于该板本体21的基面211上,且包括一设置于该导热基板2上的第一型半导体层31、一部分盖设于该第一型半导体层31上的主动层32,及一盖设该主动层32上的第二型半导体层33。该电极单元4与该发光单元3电连接,用于提供电能使该发光单元3发光,该电极单元4可以是具有一个介于该导热基板2与该发光单元3间的底电极,及一个位于该发光单元3的一个顶面的顶电极;亦可以是具有一形成于该第一型半导体层31的一表面的底电极41,及一形成于该第二型半导体层33的一表面的顶电极42。由上述结构可知该第一实施例呈如图2所示的水平导通态样。由于该发光二极体的结构及相关材料的选择为本技术领域所周知,且非为本技术的重点,故不再多加说明。在该第一实施例中,该第一型半导体层31、该主动层32、该第二型半导体层33,及该电极单元4分别是以n型氮化镓层、多重量子井层、p型氮化镓层,及金为例做说明。The light-emitting unit 3 is disposed on the base surface 211 of the board body 21 and includes a first-type semiconductor layer 31 disposed on the heat-conducting substrate 2 and an active layer 32 partially covering the first-type semiconductor layer 31 , and a second-type semiconductor layer 33 covering the active layer 32 . The electrode unit 4 is electrically connected with the light-emitting unit 3, and is used to provide electric energy to make the light-emitting unit 3 emit light. The electrode unit 4 may have a bottom electrode between the heat-conducting substrate 2 and the light-emitting unit 3, and a The top electrode of a top surface of the light-emitting unit 3; may also have a bottom electrode 41 formed on a surface of the first type semiconductor layer 31, and a top electrode formed on a surface of the second type semiconductor layer 33 electrode 42. It can be seen from the above structure that the first embodiment is in the horizontal conduction state as shown in FIG. 2 . Since the structure of the light-emitting diode and the selection of related materials are well known in the art and are not the focus of this technology, no further description is given here. In the first embodiment, the first-type semiconductor layer 31, the active layer 32, the second-type semiconductor layer 33, and the electrode unit 4 are respectively made of n-type gallium nitride layer, multiple quantum well layer, p type gallium nitride layer, and gold as an example for illustration.
参阅图4、5,当所述导热纤维22于该导热基板2中的数量足够时,该导热基板2亦可作为导电用途,因此,也可直接将具有导热及导电性质的该导热基板2设置于该发光单元3下,得到一呈垂直导通态样的发光二极体。要说明的是,所述导热纤维22的含量愈多虽然可提升导电性,然而,过多的导热纤维22却会降低该板本体21对所述导热纤维22的包覆性,而不易成形,较佳地,所述导热纤维22于该导热基板2的体积占有百分比介于10%至60%。详细的说,若该板本体21的材质为环氧树脂(epoxy),所述导热纤维22体积占有百分比介于10%至60%,较佳地,所述导热纤维22体积占有百分比介于30%至60%;若该板本体21的材质为铝,所述导热纤维22体积占有百分比介于10%至35%。更具体地说,当该板本体21的材质为环氧树脂(epoxy),且所述导热纤维22体积占有百分比为50%时,该导热基板2的电阻率即可达0.0011Ω·cm。Referring to Figures 4 and 5, when the number of the heat-conducting fibers 22 in the heat-conducting substrate 2 is sufficient, the heat-conducting substrate 2 can also be used for electrical conduction, therefore, the heat-conducting substrate 2 with thermal and electrical properties can also be directly arranged Under the light-emitting unit 3, a light-emitting diode in a vertical conduction state is obtained. It should be noted that the more the heat-conducting fibers 22 are contained, the electrical conductivity can be improved, but too much heat-conducting fibers 22 will reduce the covering property of the board body 21 on the heat-conducting fibers 22, making it difficult to shape. Preferably, the heat-conducting fiber 22 accounts for 10% to 60% of the volume of the heat-conducting substrate 2 . Specifically, if the board body 21 is made of epoxy resin, the volume percentage of the thermally conductive fibers 22 is between 10% and 60%, preferably, the volume percentage of the thermally conductive fibers 22 is between 30%. % to 60%; if the board body 21 is made of aluminum, the volume percentage of the heat conducting fiber 22 is between 10% and 35%. More specifically, when the board body 21 is made of epoxy resin and the volume percentage of the heat-conducting fibers 22 is 50%, the resistivity of the heat-conducting substrate 2 can reach 0.0011Ω·cm.
当自该电极单元4提供电能令该发光单元3作动时,特别针对高功率发光二极体,由于该导热基板2的导热纤维22直接接触该发光单元3,因此,该发光单元3于发光过程中产生的巨幅热能,能通过该导热基板2的导热纤维22导离该发光单元3;并且能再进一步通过裸露于该底面212外的导热纤维22将热能传导至外界,而具有极佳的散热效果。另外,所述裸露于该板本体21而未被该板本体21包覆的导热纤维22间还可通过碳粒子彼此黏结成一体,而维持完整的导热通道,并避免既有的导热纤维或颗粒因掺混掉落造成的元件污染问题。When electric energy is supplied from the electrode unit 4 to activate the light emitting unit 3, especially for high-power light emitting diodes, since the heat conducting fiber 22 of the heat conducting substrate 2 directly contacts the light emitting unit 3, the light emitting unit 3 emits light The huge heat energy generated during the process can be conducted away from the light-emitting unit 3 through the heat-conducting fiber 22 of the heat-conducting substrate 2; and the heat energy can be further conducted to the outside through the heat-conducting fiber 22 exposed outside the bottom surface 212, thus having an excellent cooling effect. In addition, the heat-conducting fibers 22 that are exposed on the board body 21 but not covered by the board body 21 can also be bonded together by carbon particles to maintain a complete heat-conducting channel and avoid existing heat-conducting fibers or particles. The problem of component contamination caused by mixing and dropping.
此外,要补充说明的是,为了提升该导热基板2的散热性,该板本体21也可以进一步具有其它不同的镂空的结构,而令所述导热纤维22可自该板本体21的其它位置裸露,以增加所述导热纤维22与该板本体21的接触面积或是与外界接触面积,而提升该导热基板2整体的导热及散热性。In addition, it should be supplemented that, in order to improve the heat dissipation of the heat-conducting substrate 2, the board body 21 may further have other different hollow structures, so that the heat-conducting fibers 22 may be exposed from other positions of the board body 21. , so as to increase the contact area between the heat-conducting fiber 22 and the board body 21 or the contact area with the outside, so as to improve the overall heat conduction and heat dissipation of the heat-conducting substrate 2 .
前述导热纤维22可以于发光二极体作晶粒切割(dicing)时,所述导热纤维22便能自各晶粒的侧周缘裸露于外。或者额外利用激光方式将该板本体21的部分结构移除,让所述导热纤维22裸露于外即可,并无特别限制。例如,参阅图5、6,可以利用激光方式移除该板本体21的部分结构,令该板本体21形成具有多个彼此间隔的支撑块214的镂空结构,如此,所述导热纤维22则是分布于所述支撑块214间,并自所述支撑块214间的间隙露出,而可增加所述导热纤维22与该板本体21与外界的接触面积,以提升该导热基板2的散热性;而通过调整该发光单元3与所述导热纤维22的接触面积,还能优化自该导热基板2磊置该发光单元3的磊晶效果。The heat-conducting fibers 22 can be exposed from the side edges of each crystal grain when the light-emitting diodes are diced. Alternatively, a part of the structure of the board body 21 may be removed by laser to expose the heat-conducting fibers 22 to the outside, and there is no special limitation. For example, referring to FIGS. 5 and 6, part of the structure of the board body 21 can be removed by laser, so that the board body 21 forms a hollow structure with a plurality of support blocks 214 spaced apart from each other. In this way, the heat-conducting fiber 22 is Distributed between the support blocks 214 and exposed from the gaps between the support blocks 214, the contact area between the heat-conducting fibers 22 and the board body 21 and the outside world can be increased to improve the heat dissipation of the heat-conducting substrate 2; And by adjusting the contact area between the light-emitting unit 3 and the heat-conducting fiber 22 , the epitaxial effect of the light-emitting unit 3 epitaxially formed from the heat-conducting substrate 2 can also be optimized.
本发明高导热发光二极体的一第二实施例大致上是相同于该第一实施例,其不同处在于,配合参阅图7,该板本体21具有数个孔洞213,所述导热纤维22(显示于图3)分布于板本体21,且部分自所述孔洞213显露于外。通过所述孔洞213可令所述导热纤维22裸露与外界接触,而得以具有极佳的导热及散热性,此外,还可减轻该板本体21单位体积的重量。A second embodiment of the high thermal conductivity light-emitting diode of the present invention is substantially the same as the first embodiment, the difference is that, referring to FIG. (shown in FIG. 3 ) are distributed on the board body 21 and partially exposed from the hole 213 . Through the holes 213 , the heat-conducting fibers 22 can be exposed to the outside world, so as to have excellent heat conduction and heat dissipation properties. In addition, the weight per unit volume of the board body 21 can also be reduced.
具体的说,该板本体21是选自热固性或热塑性等可适用于发泡成型的高分子材料,例如环氧树脂、酚醛树脂,及呋喃树脂等,经由物理发泡或化学发泡后而得。由于利用高分子材料进行发泡的相关制程为本技术领域所知悉,因此,不再多加说明。于本实施例中,该板本体21是利用化学发泡后而得。要再说明的是,所述孔洞213的目的是要令所述导热纤维22可通过此等孔洞213与外界接触,并减轻该板本体21单位体积的重量,然而,虽然所述孔洞213愈多,所述导热纤维22与外界接触的面积愈多而可增加散热性且单位体积的重量愈轻,但是,过多的孔洞213亦会影响该板本体21的机械强度,因此,在导热性、重量及机械强度整体的考量下,较佳地,该板本体21密度介于0.4g/cm3至0.9g/cm3。Specifically, the board body 21 is selected from thermosetting or thermoplastic polymer materials suitable for foam molding, such as epoxy resin, phenolic resin, and furan resin, etc., obtained through physical foaming or chemical foaming. . Since the related process of foaming by using polymer materials is known in the technical field, no further description is given here. In this embodiment, the board body 21 is obtained by chemical foaming. It should be further explained that the purpose of the holes 213 is to allow the heat-conducting fibers 22 to contact the outside through these holes 213, and to reduce the weight per unit volume of the board body 21, however, although the more holes 213 , the more the heat-conducting fiber 22 is in contact with the outside, the more heat dissipation can be increased and the weight per unit volume will be lighter. However, too many holes 213 will also affect the mechanical strength of the board body 21. Therefore, in terms of thermal conductivity, In consideration of overall weight and mechanical strength, preferably, the density of the board body 21 is between 0.4 g/cm 3 and 0.9 g/cm 3 .
综上所述,本发明高导热发光二极体,通过将该发光单元3直接形成于具有高导热及散热性的该导热基板2上,由于该导热基板2具有高导热性的导热纤维22,且所述导热纤维22会对外露出,因此,该发光单元3于作动时所产生的热能通过所述导热纤维22迅速导离该发光单元3并向外界散出,而可具有极佳的散热性;此外,还能进一步通过将该板本体21形成镂空或孔洞213结构,不仅可提升该导热基板2的导热及散热性,此外,还可减轻该板本体21单位体积的重量。To sum up, the high thermal conductivity light-emitting diode of the present invention forms the light-emitting unit 3 directly on the thermally conductive substrate 2 with high thermal conductivity and heat dissipation. Since the thermally conductive substrate 2 has thermally conductive fibers 22 with high thermal conductivity, And the heat-conducting fiber 22 will be exposed to the outside, therefore, the heat energy generated by the light-emitting unit 3 when it is actuated is quickly guided away from the light-emitting unit 3 through the heat-conducting fiber 22 and dissipated to the outside, which can have excellent heat dissipation In addition, by further forming the board body 21 into a hollow or hole 213 structure, not only the heat conduction and heat dissipation of the heat conduction substrate 2 can be improved, but also the weight per unit volume of the board body 21 can be reduced.
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510052453.3A CN105990509A (en) | 2015-02-02 | 2015-02-02 | High thermal conductivity light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510052453.3A CN105990509A (en) | 2015-02-02 | 2015-02-02 | High thermal conductivity light emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105990509A true CN105990509A (en) | 2016-10-05 |
Family
ID=57036868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510052453.3A Pending CN105990509A (en) | 2015-02-02 | 2015-02-02 | High thermal conductivity light emitting diode |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105990509A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265537A (en) * | 2019-05-17 | 2019-09-20 | 电子科技大学中山学院 | Substrate, substrate production method and packaging structure |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0732743A2 (en) * | 1995-03-17 | 1996-09-18 | Texas Instruments Incorporated | Heat sinks |
JPH1149578A (en) * | 1997-07-30 | 1999-02-23 | Furukawa Electric Co Ltd:The | Radiating member for semiconductor device and its production |
US20020041959A1 (en) * | 2000-06-23 | 2002-04-11 | Chihiro Kawai | High thermal conductivity composite material, and method for producing the same |
CN201100973Y (en) * | 2007-10-18 | 2008-08-13 | 秦文隆 | Cooling module |
CN101832528A (en) * | 2009-03-09 | 2010-09-15 | 亿光电子工业股份有限公司 | Heat radiation module for light-emitting device and light-emitting diode device |
CN103748674A (en) * | 2012-07-07 | 2014-04-23 | 迪睿合电子材料有限公司 | Thermally conductive sheet |
CN103958578A (en) * | 2011-10-19 | 2014-07-30 | 日东电工株式会社 | Thermal-conductive sheet, led mounting substrate, and led module |
CN104025290A (en) * | 2011-12-28 | 2014-09-03 | 东洋纺株式会社 | Insulating and thermally conductive sheet |
-
2015
- 2015-02-02 CN CN201510052453.3A patent/CN105990509A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0732743A2 (en) * | 1995-03-17 | 1996-09-18 | Texas Instruments Incorporated | Heat sinks |
JPH1149578A (en) * | 1997-07-30 | 1999-02-23 | Furukawa Electric Co Ltd:The | Radiating member for semiconductor device and its production |
US20020041959A1 (en) * | 2000-06-23 | 2002-04-11 | Chihiro Kawai | High thermal conductivity composite material, and method for producing the same |
CN201100973Y (en) * | 2007-10-18 | 2008-08-13 | 秦文隆 | Cooling module |
CN101832528A (en) * | 2009-03-09 | 2010-09-15 | 亿光电子工业股份有限公司 | Heat radiation module for light-emitting device and light-emitting diode device |
CN103958578A (en) * | 2011-10-19 | 2014-07-30 | 日东电工株式会社 | Thermal-conductive sheet, led mounting substrate, and led module |
CN104025290A (en) * | 2011-12-28 | 2014-09-03 | 东洋纺株式会社 | Insulating and thermally conductive sheet |
CN103748674A (en) * | 2012-07-07 | 2014-04-23 | 迪睿合电子材料有限公司 | Thermally conductive sheet |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265537A (en) * | 2019-05-17 | 2019-09-20 | 电子科技大学中山学院 | Substrate, substrate production method and packaging structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8344412B2 (en) | Chip level package of light-emitting diode | |
US20140175498A1 (en) | Led chip unit with current baffle | |
CN101855734B (en) | Semiconductor light emitting device | |
CN103594584B (en) | Light emitting semiconductor device and its manufacture method and luminaire | |
JP2013038438A (en) | Wire bond free wafer level led | |
US10177277B2 (en) | Flip chip type light-emitting diode and method for manufacturing the same | |
TW201025680A (en) | Optoelectronic semiconductor body | |
TWI501427B (en) | Solid state light emitting device with point contact and related manufacturing method | |
US9722162B2 (en) | Semiconductor light emitting device | |
JP2012033935A (en) | Vertical light-emitting diode (vled) die with electrode frame, and method of producing the same | |
CN101614326A (en) | Light emitting diode | |
CN205159366U (en) | Light emitting element | |
US20130313606A1 (en) | Illuminating device | |
US8841172B2 (en) | Method for forming package substrate | |
CN102544274A (en) | Wafer substrate bonding structure, light emitting device and method for manufacturing the same | |
US10763416B2 (en) | Light emitting device and leadframe thereof | |
US20160351751A1 (en) | Semiconductor light emitting structure and manufacturing method thereof | |
Horng et al. | Effect of diamond like carbon layer on heat dissipation and optoelectronic performance of vertical-type InGaN light emitting diodes | |
US9099612B2 (en) | Semiconductor light-emitting device and the manufacturing method thereof | |
CN105990509A (en) | High thermal conductivity light emitting diode | |
TWI438949B (en) | Semiconductor light-emitting chip and method of manufacturing same | |
TWI556480B (en) | High thermal conductivity light emitting diodes | |
JP2013093575A (en) | Light-emitting diode element | |
CN102082222A (en) | Light emitting diode chip and manufacture method thereof | |
KR101242093B1 (en) | LED device improved radient heat efficiency and fabricating method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161005 |
|
WD01 | Invention patent application deemed withdrawn after publication |