CN105957910A - Carbon silicon heterojunction solar cell and preparation method thereof - Google Patents
Carbon silicon heterojunction solar cell and preparation method thereof Download PDFInfo
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- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 53
- 239000010409 thin film Substances 0.000 claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000002161 passivation Methods 0.000 claims abstract description 35
- 230000000737 periodic effect Effects 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 18
- 238000004528 spin coating Methods 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000004549 pulsed laser deposition Methods 0.000 claims description 6
- 238000007772 electroless plating Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 9
- 238000001228 spectrum Methods 0.000 abstract description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
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- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
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- H—ELECTRICITY
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- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
- H10F77/1662—Amorphous semiconductors including only Group IV materials
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- Y02E10/548—Amorphous silicon PV cells
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Abstract
本发明公开了一种碳硅异质结太阳能电池及其制备方法，该电池包括：硅衬底；钝化层，其制作在硅衬底下表面，覆盖硅衬底，为周期性开孔结构；第一电极，其制作在钝化层下表面，覆盖钝化层，通过钝化层的周期性开孔与硅衬底形成周期性接触；第一非晶碳薄膜层，其制作在硅衬底上表面，覆盖硅衬底；第二非晶碳薄膜层，其制作在第一非晶碳薄膜层上表面，覆盖第一非晶碳薄膜层；第二电极，其制作在第二非晶碳薄膜层上表面，宽度小于第二非晶碳薄膜层。与传统晶体硅电池相比，该电池可以更加有效的利用太阳光谱，该电池既可以独立使用，也可以与目前的晶体硅电池组成机械叠层结构，从而提高晶体硅电池的效率，降低成本。
The invention discloses a carbon-silicon heterojunction solar cell and a preparation method thereof. The cell comprises: a silicon substrate; a passivation layer, which is made on the lower surface of the silicon substrate, covers the silicon substrate, and has a periodic opening structure; The first electrode, which is made on the lower surface of the passivation layer, covers the passivation layer, and forms periodic contact with the silicon substrate through the periodic openings of the passivation layer; the first amorphous carbon film layer, which is made on the silicon substrate The upper surface covers the silicon substrate; the second amorphous carbon thin film layer is made on the upper surface of the first amorphous carbon thin film layer and covers the first amorphous carbon thin film layer; the second electrode is made on the second amorphous carbon thin film layer The upper surface of the film layer has a width smaller than that of the second amorphous carbon film layer. Compared with traditional crystalline silicon cells, this cell can use the solar spectrum more effectively. The cell can be used independently or form a mechanical stack structure with current crystalline silicon cells, thereby improving the efficiency of crystalline silicon cells and reducing costs.
Description
技术领域technical field
本专利涉及能源技术领域，尤其涉及一种碳硅异质结太阳能电池及其制备方法This patent relates to the field of energy technology, in particular to a carbon-silicon heterojunction solar cell and its preparation method
背景技术Background technique
近几年全世界环境污染、温室效应等问题日趋严重，而且传统能源储量越来越少，价格越来越高，所以人类对清洁能源的需求越来越大，太阳能光伏发电作为一种清洁能源越来越受到人们的重视。目前，市场上销售的太阳能光伏电池大部分是单晶硅和多晶硅太阳能电池，晶体硅材料的能带宽度为1.12eV，截止波长为1107nm，因此不能有效利用太阳能光谱的红外和紫外波段。In recent years, problems such as environmental pollution and the greenhouse effect have become increasingly serious around the world, and traditional energy reserves have become less and less, and prices have become higher and higher. Therefore, human demand for clean energy is increasing. Solar photovoltaic power generation as a clean energy More and more attention has been paid. At present, most of the solar photovoltaic cells sold on the market are monocrystalline silicon and polycrystalline silicon solar cells. The energy band width of crystalline silicon materials is 1.12eV, and the cut-off wavelength is 1107nm, so the infrared and ultraviolet bands of the solar spectrum cannot be effectively used.
发明内容Contents of the invention
本发明的目的在于提供一种碳硅异质结太阳能电池及其制备方法，该电池基于目前最成熟的晶体硅电池制造技术，在晶体硅衬底上制备两层廉价的带隙可调的非晶碳薄膜，构成PIN结构太阳能电池，非晶碳薄膜的带隙可以在0.2到3eV之间进行调制，因此与传统晶体硅电池相比，该碳硅异质结电池可以更加有效的利用太阳光谱。The object of the present invention is to provide a carbon-silicon heterojunction solar cell and its preparation method. The cell is based on the most mature crystalline silicon cell manufacturing technology. The crystalline carbon film constitutes a PIN structure solar cell, and the band gap of the amorphous carbon film can be modulated between 0.2 and 3eV. Therefore, compared with the traditional crystalline silicon cell, the carbon-silicon heterojunction cell can use the solar spectrum more effectively .
本发明采用的技术方案是：The technical scheme adopted in the present invention is:
一种碳硅异质结太阳能电池，包括：A carbon-silicon heterojunction solar cell, comprising:
硅衬底；Silicon substrate;
钝化层，其制作在硅衬底下表面，覆盖硅衬底，为周期性开孔结构；A passivation layer, which is made on the lower surface of the silicon substrate, covers the silicon substrate, and has a periodic opening structure;
第一电极，其制作在钝化层下表面，覆盖钝化层，通过钝化层的周期性开孔与硅衬底形成周期性接触；The first electrode is made on the lower surface of the passivation layer, covers the passivation layer, and forms periodic contact with the silicon substrate through the periodic openings of the passivation layer;
第一非晶碳薄膜层，其制作在硅衬底上表面，覆盖硅衬底；The first amorphous carbon thin film layer is made on the upper surface of the silicon substrate and covers the silicon substrate;
第二非晶碳薄膜层，其制作在第一非晶碳薄膜层上表面，覆盖第一非晶碳薄膜层；The second amorphous carbon thin film layer, which is made on the upper surface of the first amorphous carbon thin film layer, covers the first amorphous carbon thin film layer;
第二电极，其制作在第二非晶碳薄膜层上表面，宽度小于第二非晶碳薄膜层。The second electrode is made on the upper surface of the second amorphous carbon thin film layer and has a width smaller than that of the second amorphous carbon thin film layer.
进一步的，其中所述硅衬底为单晶硅或多晶硅材料，为P型或N型掺杂。Furthermore, the silicon substrate is made of single crystal silicon or polycrystalline silicon material, doped with P-type or N-type.
进一步的，其中所述钝化层为Al2O3、SiO2、SiNx和Ca2O3中的一种或多种的组合，其厚度小于1000纳米。Further, the passivation layer is a combination of one or more of Al 2 O 3 , SiO 2 , SiNx and Ca 2 O 3 , and its thickness is less than 1000 nanometers.
进一步的，其中所述第一非晶碳薄膜层为本征掺杂；所述第二非晶碳薄膜层的掺杂类型与硅衬底相反，第二非晶碳薄膜层的能带宽度大于第一非晶碳薄膜层。Further, wherein the first amorphous carbon thin film layer is intrinsically doped; the doping type of the second amorphous carbon thin film layer is opposite to that of the silicon substrate, and the energy band width of the second amorphous carbon thin film layer is greater than The first amorphous carbon thin film layer.
一种碳硅异质结太阳能电池的制备方法，包括：A method for preparing a carbon-silicon heterojunction solar cell, comprising:
步骤1：在硅衬底上表面制备微纳陷光结构；Step 1: Prepare a micro-nano trapping light structure on the upper surface of the silicon substrate;
步骤2：在硅衬底上表面制备第一非晶碳薄膜层；Step 2: preparing a first amorphous carbon film layer on the upper surface of the silicon substrate;
步骤3：在第一非晶碳薄膜层上表面制备第二非晶碳薄膜层；Step 3: preparing a second amorphous carbon thin film layer on the upper surface of the first amorphous carbon thin film layer;
步骤4：在硅衬底下表面制备钝化层；Step 4: preparing a passivation layer on the lower surface of the silicon substrate;
步骤5：在第二非晶碳薄膜层上表面制备第二电极；Step 5: preparing a second electrode on the upper surface of the second amorphous carbon film layer;
步骤6：在钝化层下表面制备第一电极；Step 6: preparing a first electrode on the lower surface of the passivation layer;
步骤7：使钝化层形成周期性开孔结构的同时使第一电极通过开孔与硅衬底形成周期性接触。Step 7: Make the passivation layer form a periodic opening structure and at the same time make the first electrode form periodic contact with the silicon substrate through the openings.
进一步的，其中步骤1的微纳陷光结构的制备采用的是化学溶液腐蚀或等离子体刻蚀的方法。Further, the preparation of the micro-nano light-trapping structure in step 1 adopts the method of chemical solution etching or plasma etching.
进一步的，其中步骤2的第一非晶碳薄膜层以及步骤3的第二非晶碳薄膜层的制备采用的是原子层沉积、化学气相沉积、脉冲激光沉积、磁控溅射、喷涂或旋涂的方法，该第一、第二非晶碳薄膜层制备完成后，采用化学溶液对其进行化学处理。Further, the preparation of the first amorphous carbon thin film layer in step 2 and the second amorphous carbon thin film layer in step 3 adopts atomic layer deposition, chemical vapor deposition, pulsed laser deposition, magnetron sputtering, spray coating or spin coating. In the coating method, after the first and second amorphous carbon thin film layers are prepared, they are chemically treated with a chemical solution.
进一步的，其中步骤4的钝化层的制备采用的是原子层沉积、化学气相沉积、脉冲激光沉积、磁控溅射、喷涂或旋涂的方法。Further, the passivation layer in step 4 is prepared by atomic layer deposition, chemical vapor deposition, pulsed laser deposition, magnetron sputtering, spray coating or spin coating.
进一步的，其中步骤5的第二电极的制备和步骤6的第一电极的制备采用的是电子束蒸发、热蒸发、磁控溅射、电镀、化学镀、丝网印刷、喷涂或旋涂的方法。Further, the preparation of the second electrode in step 5 and the first electrode in step 6 adopt electron beam evaporation, thermal evaporation, magnetron sputtering, electroplating, electroless plating, screen printing, spray coating or spin coating method.
进一步的，其中步骤7的使钝化层形成周期性开孔结构采用的是用脉冲或连续激光对第一电极进行周期选择性辐照的方法，使第一电极被激光辐照部分熔融烧穿钝化层然后冷却，从而使第一电极通过开孔与硅衬底形成周期性接触。Further, the step 7 of forming the passivation layer with a periodic opening structure adopts a method of periodically selectively irradiating the first electrode with a pulse or continuous laser, so that the first electrode is partially melted and burned through by laser irradiation The passivation layer is then cooled so that the first electrode makes periodic contact with the silicon substrate through the openings.
本发明的有益效果是：与传统晶体硅电池相比，该电池可以更加有效的利用太阳光谱，该电池既可以独立使用，也可以与目前的晶体硅电池组成机械叠层结构，从而提高晶体硅电池的效率，降低成本。The beneficial effects of the present invention are: compared with the traditional crystalline silicon battery, the battery can use the solar spectrum more effectively, and the battery can be used independently, or can be combined with the current crystalline silicon battery to form a mechanical stack structure, thereby improving the crystalline silicon battery. The efficiency of the battery reduces the cost.
附图说明Description of drawings
图1是提供的一种碳硅异质结太阳能电池的结构示意图Figure 1 is a structural schematic diagram of a carbon-silicon heterojunction solar cell provided
图2是本发明实施例中提供的一种碳硅异质结太阳能电池的制备方法流程图Fig. 2 is a flow chart of a method for preparing a carbon-silicon heterojunction solar cell provided in an embodiment of the present invention
具体实施方式detailed description
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明作进一步的详细说明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
图1示出了本发明实施例中提供的一种碳硅异质结太阳能电池的结构示意图。如图1所示，该碳硅异质结太阳能电池包括：Fig. 1 shows a schematic structural diagram of a carbon-silicon heterojunction solar cell provided in an embodiment of the present invention. As shown in Figure 1, the carbon-silicon heterojunction solar cell includes:
一硅衬底1，硅衬底为单晶硅或多晶硅材料，为P型或N型掺杂；A silicon substrate 1, the silicon substrate is a single crystal silicon or polycrystalline silicon material, doped with P-type or N-type;
一钝化层2，其制作在硅衬底1下表面，覆盖硅衬底1，为周期性开孔结构，该钝化层的材料为Al2O3、SiO2、SiNx和Ca2O3中的一种或多种的组合，其厚度小于1000纳米；A passivation layer 2, which is made on the lower surface of the silicon substrate 1, covers the silicon substrate 1, and has a periodic opening structure, and the material of the passivation layer is Al 2 O 3 , SiO 2 , SiNx and Ca 2 O 3 A combination of one or more of the above, the thickness of which is less than 1000 nm;
一第一电极3，其制作在钝化层2下表面，覆盖钝化层2，通过钝化层2的周期性开孔与硅衬底1形成周期性接触；A first electrode 3, which is made on the lower surface of the passivation layer 2, covers the passivation layer 2, and forms periodic contact with the silicon substrate 1 through the periodic openings of the passivation layer 2;
一第一非晶碳薄膜层4，其制作在硅衬底1上表面，覆盖硅衬底1，为本征掺杂；A first amorphous carbon thin film layer 4, which is made on the upper surface of the silicon substrate 1, covers the silicon substrate 1, and is intrinsically doped;
一第二非晶碳薄膜层5，其制作在第一非晶碳薄膜层4上表面，覆盖第一非晶碳薄膜层4，掺杂类型与硅衬底1相反，第二非晶碳薄膜层5的能带宽度大于第一非晶碳薄膜层4；A second amorphous carbon thin film layer 5, which is made on the upper surface of the first amorphous carbon thin film layer 4, covers the first amorphous carbon thin film layer 4, the doping type is opposite to that of the silicon substrate 1, and the second amorphous carbon thin film The energy band width of layer 5 is greater than that of the first amorphous carbon thin film layer 4;
一第二电极6，其制作在第二非晶碳薄膜层5上表面，宽度小于第二非晶碳薄膜层5。A second electrode 6 is fabricated on the upper surface of the second amorphous carbon thin film layer 5 and has a width smaller than that of the second amorphous carbon thin film layer 5 .
图2示出了本发明实施例中提供的一种碳硅异质结太阳能电池的制备方法，该方法包含以下步骤：Figure 2 shows a method for preparing a carbon-silicon heterojunction solar cell provided in an embodiment of the present invention, the method includes the following steps:
步骤1：在硅衬底1上表面采用硝酸等酸性或氢氧化钠等碱性化学溶液腐蚀或等离子体刻蚀方法制备微纳陷光结构，使硅衬底1的上表面形成微米或纳米量级的随机或规则的微小金字塔结构或坚锥结构或棒状结构或孔结构，从而减少碳硅异质结太阳能电池上表面对入射光的反射；Step 1: On the upper surface of the silicon substrate 1, use an acidic or alkaline chemical solution such as nitric acid or sodium hydroxide to etch or plasma etch to prepare a micro-nano optical structure, so that the upper surface of the silicon substrate 1 forms a micron or nanometer Random or regular micro-pyramid structure or cone structure or rod structure or hole structure, thereby reducing the reflection of incident light on the upper surface of carbon-silicon heterojunction solar cells;
步骤2：在硅衬底1上表面采用原子层沉积、化学气相沉积、脉冲激光沉积、磁控溅射、喷涂或旋涂的方法制备第一非晶碳薄膜层4，该薄膜层制备完成后，采用硝酸、盐酸等化学溶液对其进行化学处理；Step 2: Prepare the first amorphous carbon thin film layer 4 on the upper surface of the silicon substrate 1 by atomic layer deposition, chemical vapor deposition, pulsed laser deposition, magnetron sputtering, spray coating or spin coating. After the thin film layer is prepared , use nitric acid, hydrochloric acid and other chemical solutions to chemically treat it;
步骤3：在第一非晶碳薄膜层4上表面采用原子层沉积、化学气相沉积、脉冲激光沉积、磁控溅射、喷涂或旋涂的方法制备第二非晶碳薄膜层5，该薄膜层制备完成后，采用硝酸、盐酸等化学溶液对其进行化学处理；Step 3: Prepare the second amorphous carbon thin film layer 5 on the upper surface of the first amorphous carbon thin film layer 4 by atomic layer deposition, chemical vapor deposition, pulsed laser deposition, magnetron sputtering, spray coating or spin coating. After the layer is prepared, it is chemically treated with chemical solutions such as nitric acid and hydrochloric acid;
步骤4：在硅衬底1下表面采用原子层沉积、化学气相沉积、脉冲激光沉积、磁控溅射、喷涂或旋涂的方法制备钝化层2；Step 4: Prepare a passivation layer 2 on the lower surface of the silicon substrate 1 by atomic layer deposition, chemical vapor deposition, pulsed laser deposition, magnetron sputtering, spray coating or spin coating;
步骤5：在第二非晶碳薄膜层5上表面采用电子束蒸发、热蒸发、磁控溅射、电镀、化学镀、丝网印刷、喷涂或旋涂的方法制备第二电极6；Step 5: Prepare the second electrode 6 on the upper surface of the second amorphous carbon film layer 5 by means of electron beam evaporation, thermal evaporation, magnetron sputtering, electroplating, electroless plating, screen printing, spray coating or spin coating;
步骤6：在钝化层2下表面采用电子束蒸发、热蒸发、磁控溅射、电镀、化学镀、丝网印刷、喷涂或旋涂的方法制备第一电极3；Step 6: Prepare the first electrode 3 on the lower surface of the passivation layer 2 by means of electron beam evaporation, thermal evaporation, magnetron sputtering, electroplating, electroless plating, screen printing, spray coating or spin coating;
步骤7：用脉冲或连续激光对第一电极进行周期选择性辐照，使第一电极被激光辐照部分熔融烧穿钝化层2然后冷却，从而使钝化层2形成周期性开孔结构，同时使第一电极通过开孔与硅衬底1形成周期性接触。Step 7: Periodically and selectively irradiate the first electrode with a pulsed or continuous laser, so that the part of the first electrode irradiated by the laser melts and burns through the passivation layer 2 and then cools, so that the passivation layer 2 forms a periodic opening structure , and at the same time make the first electrode form periodic contact with the silicon substrate 1 through the opening.
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