CN105957711A - Interface terminal of thin-film capacitor - Google Patents
Interface terminal of thin-film capacitor Download PDFInfo
- Publication number
- CN105957711A CN105957711A CN201610474893.2A CN201610474893A CN105957711A CN 105957711 A CN105957711 A CN 105957711A CN 201610474893 A CN201610474893 A CN 201610474893A CN 105957711 A CN105957711 A CN 105957711A
- Authority
- CN
- China
- Prior art keywords
- interface terminal
- film capacitor
- thin film
- busbar
- igbt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention provides an interface terminal of a thin-film capacitor. The interface terminal comprises a housing, wherein a busbar is arranged in the housing; a DC bus interface terminal and an IGBT interface terminal are led out from the busbar; the IGBT interface terminal comprises a positive interface terminal and a negative interface terminal; each of the positive interface terminal and the negative interface terminal is formed by interconnecting a vertically arranged connection plate connected with the busbar and a horizontally arranged wiring board for connecting an IGBT; and the wiring boards of the positive interface terminal and the negative interface terminal are isolated through an insulating board. The current loop area is proportional to an inductance value, the IGBT interface terminal is changed in vertical arrangement from horizontal arrangement and the loop area can be reduced, so that the loop inductance value is reduced. By the interface terminal provided by the invention, the disadvantages of the prior art are overcome; the equivalent inductance value of the thin-film capacitor is effectively reduced; and meanwhile, the interface terminal is simple in structure, convenient to process and manufacture and low in cost.
Description
Technical field
The present invention relates to the new interface terminal of a kind of thin film capacitor, this Interface Terminal and thin film capacitor are one
Body structure, is used for realizing being directly connected to of thin film capacitor and insulated gate bipolar transistor (IGBT), main
New energy automobile motor Drive technology field to be applied to.
Background technology
New-energy automobile, either hybrid power (HEV), hydrogen power or pure electronic, be required for motor and drive
Module, is also accomplished by capacitor, especially thin film capacitor and realizes filtering and support.Thin-film capacitor core
As electrode, roll up in pairs using organic film as dielectric, the metal level being deposited with on organic film surface
Around forming.Busbar two-plate and capacitor body the two poles of the earth use welding manner to carry out integrated design, and draw straight
Stream bus interface terminal and IGBT Interface Terminal.
At present, thin film capacitor IGBT Interface Terminal structure such as Fig. 1 institute used by New energy automobile motor driver
Show, at shell 1 built with dc bus Interface Terminal 3 and IGBT Interface Terminal 4, IGBT Interface Terminal 4
For slab construction, wide of slab construction be arranged in parallel with shell 1 base plate, same IGBT Interface Terminal 4
Positive and negative electrode Interface Terminal uses the setting that is spaced a distance between split structure, i.e. positive and negative electrode Interface Terminal,
In shell 1, rest utilizes casting glue 2 to fill.
The IGBT Interface Terminal of above-mentioned employing split structure is arranged so that the equivalent inductance value of capacitor compares
Greatly, it is sometimes difficult to meet the performance requirement of motor driver.Therefore, in busbar and fuse integrated design process
In, reduce capacitor equivalent inductance value and become the important requirement that have to take into account in design process.
Summary of the invention
The technical problem to be solved in the present invention is how to reduce the equivalent inductance of thin film capacitor, optimizes its electro permanent magnetic
Energy.
In order to solve above-mentioned technical problem, the technical scheme is that the interface end that a kind of thin film capacitor is provided
Son, including shell, is provided with busbar in shell, draw dc bus Interface Terminal and IGBT interface end from busbar
Son, it is characterised in that: described IGBT Interface Terminal includes positive and negative electrode Interface Terminal, positive and negative electrode interface end
Son is by the connecting plate being connected with described busbar being vertically arranged and the horizontally disposed wiring for connecting IGBT
Plate interconnects and constitutes, and is isolated by insulation board between the patch panel of positive and negative electrode Interface Terminal.
Preferably, described connecting plate medial extremity connects described busbar, and described connecting plate outboard end connects described wiring
Plate.
Preferably, described connecting plate is the slab construction being vertically arranged, the leptoprosopy of the most described connecting plate with described outside
It is arranged in parallel bottom shell.
Preferably, described patch panel is horizontally disposed slab construction, the wide face of the most described patch panel with described outside
It is arranged in parallel bottom shell.
Preferably, described patch panel is provided with the interface holes for being connected with IGBT.
Preferably, the patch panel of described positive and negative electrode Interface Terminal two sides with described insulation board respectively are close to.
Preferably, being provided with capacitor body in described shell, described busbar connects positive and negative the two of capacitor body
Pole.
Preferably, the two-plate of described busbar uses polyethylene terephthalate insulating paper insulation.
Preferably, in described shell, rest utilizes casting glue to fill.
The design principle of the Interface Terminal of the thin film capacitor that the present invention provides is: because of current loop area and inductance
Amount is directly proportional, and changes into being vertically arranged by being horizontally disposed with by IGBT Interface Terminal, it is possible to reduce loop area, from
And make loop inductance amount reduce therewith.
The Interface Terminal that the present invention provides overcomes the deficiencies in the prior art, significantly reduces thin film capacitor
Equivalent inductance value, simultaneously simple in construction, processing, easily manufactured, with low cost.
Accompanying drawing explanation
Fig. 1 is the Interface Terminal structural representation of conventional films capacitor；
The Interface Terminal structural representation of the thin film capacitor that Fig. 2 provides for the present embodiment；
Fig. 3 is that the present embodiment thin film capacitor busbar assembles schematic diagram with fuse；
Fig. 4 is return flux and the time dependent song of loop current of the capacitor using legacy interface terminal
Line；
The return flux of the capacitor of the Interface Terminal that Fig. 5 provides for using the present embodiment and loop current are at any time
Between change curve；
In figure, 1 is shell, and 2 is casting glue, and 3 is dc bus Interface Terminal, and 4 is IGBT Interface Terminal,
5 is busbar, and 6 is fuse, and 7 is polyethylene terephthalate (PET) insulating paper.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is expanded on further.Should be understood that these embodiments are merely to illustrate
The present invention rather than restriction the scope of the present invention.In addition, it is to be understood that read the present invention lecture content it
After, the present invention can be made various changes or modifications by those skilled in the art, and these equivalent form of values fall within this equally
Application appended claims limited range.
The Interface Terminal structural representation of the thin film capacitor that Fig. 2 provides for the present embodiment, described thin-film capacitor
The Interface Terminal structure of device includes shell 1, and in conjunction with Fig. 3, busbar 5 uses welding manner to connect capacitor body
Positive and negative the two poles of the earth of 6, the two-plate of busbar 5 uses polyethylene terephthalate (PET) insulating paper 7 exhausted
Edge, draws dc bus Interface Terminal 3 and IGBT Interface Terminal 4, rest in shell 1 from busbar 5
Casting glue 2 is utilized to fill.
IGBT Interface Terminal 4 includes positive and negative electrode Interface Terminal, and positive and negative electrode Interface Terminal is by being vertically arranged
Connecting plate 4-1 and horizontally disposed patch panel 4-2 interconnect constitute.Connecting plate 4-1 is be vertically arranged
Slab construction, the i.e. leptoprosopy of connecting plate 4-1 be arranged in parallel bottom shell 1, and the wide face of connecting plate 4-1 is vertical
Arrange bottom shell 1.Patch panel 4-2 is horizontally disposed slab construction, i.e. the wide face of patch panel 4-2 is with outer
It is arranged in parallel bottom shell 1, patch panel 4-2 has the interface holes for being connected with IGBT.
Connecting plate 4-1 medial extremity connects busbar 5, and outboard end connects patch panel 4-2.Same IGBT Interface Terminal
The patch panel 4-2 of positive and negative electrode Interface Terminal press close to arrange, and between isolated by insulation board 8.The most just,
The patch panel 4-2 of negative pole Interface Terminal is close to two sides with insulation board 8 respectively.
On the premise of other parameter is the most identical, to using the thin film capacitor of traditional Interface Terminal with use originally
The thin film capacitor of Interface Terminal that embodiment provides carries out loop test, obtain return flux and loop current with
The curve of time change is the most as shown in Figure 4 and Figure 5.Can be obtained by Fig. 4 and Fig. 5, use legacy interface terminal
The stray inductance of capacitor be 27.9nH, use capacitor spuious of the Interface Terminal that the present embodiment provides
Inductance is 20.5nH.
Visible, compare traditional structure, use the inductance value of capacitor of the Interface Terminal of the present embodiment offer significantly
Reduce.
Claims (9)
1. an Interface Terminal structure for thin film capacitor, including shell (1), is provided with busbar (5) in shell (1),
Dc bus Interface Terminal (3) and IGBT Interface Terminal (4) is drawn from busbar (5), it is characterised in that:
Described IGBT Interface Terminal (4) includes positive and negative electrode Interface Terminal, and positive and negative electrode Interface Terminal is by vertically
The connecting plate (4-1) being connected with described busbar (5) and horizontally disposed for connecting connecing of IGBT arranged
Line plate (4-2) interconnects and constitutes, and passes through insulation board between the patch panel (4-2) of positive and negative electrode Interface Terminal
(8) isolation.
The Interface Terminal structure of a kind of thin film capacitor the most as claimed in claim 1, it is characterised in that: described company
Fishplate bar (4-1) medial extremity connects described busbar (5), and described connecting plate (4-1) outboard end connects described wiring
Plate (4-2).
The Interface Terminal structure of a kind of thin film capacitor the most as claimed in claim 1 or 2, it is characterised in that: institute
Stating connecting plate (4-1) is the slab construction being vertically arranged, the leptoprosopy of the most described connecting plate (4-1) with described outside
Shell (1) bottom be arranged in parallel.
The Interface Terminal structure of a kind of thin film capacitor the most as claimed in claim 1 or 2, it is characterised in that: institute
Stating patch panel (4-2) is horizontally disposed slab construction, the wide face of the most described patch panel (4-2) with described outside
Shell (1) bottom be arranged in parallel.
The Interface Terminal structure of a kind of thin film capacitor the most as claimed in claim 1 or 2, it is characterised in that: institute
State patch panel (4-2) and be provided with the interface holes for being connected with IGBT.
The Interface Terminal structure of a kind of thin film capacitor the most as claimed in claim 1, it is characterised in that: described just,
The patch panel (4-2) of negative pole Interface Terminal two sides with described insulation board (8) respectively are close to.
The Interface Terminal structure of a kind of thin film capacitor the most as claimed in claim 1, it is characterised in that: outside described
Being provided with capacitor body (6) in shell (1), described busbar (5) connects the positive and negative of capacitor body (6)
The two poles of the earth.
8. the Interface Terminal structure of a kind of thin film capacitor as described in claim 1 or 7, it is characterised in that: institute
The two-plate stating busbar (5) uses polyethylene terephthalate insulating paper (7) insulation.
The Interface Terminal structure of a kind of thin film capacitor the most as claimed in claim 1, it is characterised in that: outside described
Shell (1) interior rest utilizes casting glue (2) to fill.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610474893.2A CN105957711A (en) | 2016-06-25 | 2016-06-25 | Interface terminal of thin-film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610474893.2A CN105957711A (en) | 2016-06-25 | 2016-06-25 | Interface terminal of thin-film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105957711A true CN105957711A (en) | 2016-09-21 |
Family
ID=56904919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610474893.2A Pending CN105957711A (en) | 2016-06-25 | 2016-06-25 | Interface terminal of thin-film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105957711A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109599813A (en) * | 2018-12-10 | 2019-04-09 | 南通新江海动力电子有限公司 | A kind of bulk packaging type busbar dropping self-induction |
| CN110462770A (en) * | 2017-03-21 | 2019-11-15 | 松下知识产权经营株式会社 | Capacitor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202384178U (en) * | 2011-12-07 | 2012-08-15 | 厦门法拉电子股份有限公司 | Capacitor structure with internal laminated bus bars |
| CN103872935A (en) * | 2008-10-29 | 2014-06-18 | 日立汽车系统株式会社 | Power conversion device |
| CN204332694U (en) * | 2014-11-28 | 2015-05-13 | 比亚迪股份有限公司 | film capacitor |
| WO2015133218A1 (en) * | 2014-03-06 | 2015-09-11 | 株式会社村田製作所 | Capacitor module |
| CN104934223A (en) * | 2015-06-28 | 2015-09-23 | 无锡宸瑞新能源科技有限公司 | Thin-film capacitor for automobile |
| CN205900321U (en) * | 2016-06-25 | 2017-01-18 | 上海鹰峰电子科技股份有限公司 | Film capacitor's interface terminal |
-
2016
- 2016-06-25 CN CN201610474893.2A patent/CN105957711A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872935A (en) * | 2008-10-29 | 2014-06-18 | 日立汽车系统株式会社 | Power conversion device |
| CN202384178U (en) * | 2011-12-07 | 2012-08-15 | 厦门法拉电子股份有限公司 | Capacitor structure with internal laminated bus bars |
| WO2015133218A1 (en) * | 2014-03-06 | 2015-09-11 | 株式会社村田製作所 | Capacitor module |
| CN204332694U (en) * | 2014-11-28 | 2015-05-13 | 比亚迪股份有限公司 | film capacitor |
| CN104934223A (en) * | 2015-06-28 | 2015-09-23 | 无锡宸瑞新能源科技有限公司 | Thin-film capacitor for automobile |
| CN205900321U (en) * | 2016-06-25 | 2017-01-18 | 上海鹰峰电子科技股份有限公司 | Film capacitor's interface terminal |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110462770A (en) * | 2017-03-21 | 2019-11-15 | 松下知识产权经营株式会社 | Capacitor |
| CN109599813A (en) * | 2018-12-10 | 2019-04-09 | 南通新江海动力电子有限公司 | A kind of bulk packaging type busbar dropping self-induction |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160921 |
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| RJ01 | Rejection of invention patent application after publication |