CN105932864A - Intelligent IGBT (insulated gate bipolar transistor) constant-current driving device - Google Patents
Intelligent IGBT (insulated gate bipolar transistor) constant-current driving device Download PDFInfo
- Publication number
- CN105932864A CN105932864A CN201610563586.1A CN201610563586A CN105932864A CN 105932864 A CN105932864 A CN 105932864A CN 201610563586 A CN201610563586 A CN 201610563586A CN 105932864 A CN105932864 A CN 105932864A
- Authority
- CN
- China
- Prior art keywords
- igbt
- current
- module
- pld
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 claims abstract description 22
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 26
- 230000008859 change Effects 0.000 description 25
- 230000008569 process Effects 0.000 description 24
- 230000001276 controlling effect Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000007599 discharging Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000009194 climbing Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 230000009514 concussion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses an intelligent IGBT (insulated gate bipolar transistor) constant-current driving device. The intelligent IGBT constant-current driving device comprises an isolation DC (direct current)-DC module, a PLD (programmable logic device) digital control module, a DAC (digital-to-analog converter) module, a controlled constant-current source, a voltage comparison logic circuit, a gate-level current acquisition circuit and a current comparison logic circuit. A driving power source and a driving signal of a primary side control portion provide an isolated driving power source and a driving signal for a secondary side through the isolation DC-DC module, and an alarming signal of the secondary side provides an isolated alarming signal for the primary side through the isolation DC-DC module. Output ends of the driving signals, the voltage comparison logic circuit and the current comparison logic circuit are connected with an input end of a PLD digital signal, output of PLD is connected with input of the DAC module, outputs of the DAC module and a subtraction circuit are connected with input of the controlled constant-current source, and output of the controlled constant-current source is connected with gate level of IGBT. On the basis of PLD digital control, output of a control circuit can be regulated according to parameter differences of different types of IGBTs to realize optimal control of different series and different types of the IGBTs.
Description
Technical field
The present invention relates to a kind of IGBT drive circuit, a kind of intelligentized IGBT constant current driving device.
Background technology
Along with developing rapidly of Power Electronic Technique and semiconductor technology, Power Electronic Technique constantly penetrates into new neck
Territory.Insulated gate bipolar transistor IGBT (Insulated Gate Bipo1arTransistor) had both had the work of MOSFET
Making that speed is fast, input impedance is high, drive circuit is simple, the advantage of Heat stability is good, the current-carrying capacity containing again GTR is big, block
The multiple advantages such as voltage is high, are the perfect switch devices replacing GTR.Therefore, its range of application in modern power electronics technology
More and more extensive.Nowadays, rated current and the rated voltage of IGBT have been respectively increased 3600A and 6500V, by high-power
The modernization MW class current transformer that IGBT is constituted is widely used in the middle of all types of industries, and traction and auxiliary such as rolling stock supply
Electricity system etc..
The drive circuit of IGBT is the interface between power electronics main circuit and control circuit, is power electronic equipment
Important step, the service behaviour of whole circuit is had a great impact by the quality of its performance.Use drive circuit of good performance,
Power electronic devices can be made to be operated in comparatively ideal on off state, shorten switch time, reduce switching loss, the operation to device
Efficiency, reliability, security have important meaning.The running environment of high-power IGBT is relatively more severe, and voltage is typically at kilovolt
Above, obtain the most in time processing once break down, the most serious consequence can be caused, even can cause security incident, because of
It is most important to the safe operation of equipment that this designs drive circuit.Traditional high-power IGBT drives and is usually by discrete unit
Part, pure analog circuit form, it is achieved defencive function limited, the accuracy of protection is by the accuracy guarantee of components and parts, at IGBT
Can produce asynchronous during series and parallel, so can leave potential safety hazard.
The drive circuit of traditional IGBT drive circuit many uses open loop approach, i.e. can only be driven by single change grid
Dynamic resistance or regulation gate drive voltage control the switching process of IGBT, and the details for IGBT switching process does not has
Carry out deep analysis and control in real time, thus some unnecessary switching delay and switching losses can be increased.Recently as
The development of technology, occurring in that some intelligent IGBT drive can realize controlling, such as to the switching process details of IGBT:
(1) the IGBT drive system of multistage resistance switching, the IGBT that collector current rate of change is directly controlled by (2) drives
System.
Chinese utility model patent " intelligent digitalized high-power IGBT driving means " (Authorization Notice No.
CN204633582U) the IGBT drive system of a kind of multistage grid electricity group switching is disclosed.First pass through the detection of di/dt module
The on off state of IGBT, according to the IGBT state in which driving resistance by switching IGBT real-time for CPLD, on the one hand reduces
The switching delay of IGBT and Miller plateau time, reduce switching loss;On the other hand IGBT collection when turning on and off is reduced
The rate of change of electrode current, thus due to voltage spikes when reducing due to voltage spikes when opening and turn off, reduce IGBT because of beyond peace
Full workspace and the risk that lost efficacy.Although using the Intelligent IGBT Drive Circuit changing resistance realization to have above excellent
Point, but the gate drive voltage of its drive system is still fixed voltage, the duty change stage by stage according only to IGBT is driven
Dynamic resistance, it is impossible to realize IGBT gate drive current and the Linear Control of the rate of change of collector current accurately, it is impossible to
Realize ensureing that IGBT is operated in safety operation area on the basis of at utmost reducing switching loss.
Chinese invention patent application " High Power IGBT Driver Circuit of the automatic tracing control of a kind of switching process " (publication number
CN105429440A) disclose the High Power IGBT Driver Circuit of the automatic tracing control of a kind of switching process, drive including three steps
Control module, three step drive control modules respectively with diC/ dt detection module, power amplifier module connect, diC/ dt detection module,
Power amplifier module is all connected with IGBT.Directly by collector current rate of change di/dt is sampled, by sample magnitude warp
Cross operational amplifier to process, according to the comparison with outside specified value, the change of real-time control gate driving voltage, use up and reality
The purpose of existing domination set electrode current rate of change di/dt.Technical scheme disclosed in this patent, simply achieves collector current
The Linear Control of rate of change di/dt, does not realize farthest reducing switching loss.Only at collector current rate of change
The change of the control gate driving voltage that stage that di/dt changes is real-time, for switching delay and Miller platform phase, collection
Electrode current rate of change di/dt is not changed in, the mode remaining constant-voltage charge that IGBT gate charges uses.Along with electric capacity electricity
The rising of pressure, charging current necessarily reduces, especially Miller platform phase, and grid capacitance voltage is with charging voltage difference the most very
Little, charging current is smaller, so can not realize farthest reducing switching delay and Miller plateau time, reduction is opened
Close loss.
Summary of the invention
The technical problem to be solved, is the defect overcoming prior art to exist, and proposes a kind of intelligentized
IGBT constant current driving device.Its basic ideas are: digital control as core with PLD, by detection collector current ICPenetrate with pole
Step voltage UCEJudge the duty of IGBT accurately, according to the duty of IGBT, the charging of real-time change IGBT grid
Electric current, it is achieved the optimum control to IGBT, (1) is digital control as core with PLD, can be according to the difference of different model IGBT parameter
Regulation controls the output in loop, it is achieved to different series, the IGBT optimum control of different model.(2) just the essence of IGBT is driven
Being the control to IGBT grid current discharge and recharge, this patent uses real-time enter IGBT grid charging and discharging currents of digital-control constant-flow source
Row closed-loop control, on the one hand can limit the maximum of IGBT grid charging and discharging currents, prevents grid and whole IGBT from occurring
Concussion, on the other hand can realize optimized control to IGBT switching process.(3) IGBT collector current is effectively being suppressed
Rate of change di/dt, due to voltage spikes when reducing current spike when opening and turn off, prevent IGBT because of beyond safety operation area
And on the basis of damaging, reduce switching delay and Miller plateau time to greatest extent, reduce switching loss, improve system effect
Rate.(4) in the case of being short-circuited, a grade V can be penetrated according to IGBT poleCEWith collector current ICState to distinguish a class short
Road and the short circuit of two classes, select corresponding mode to turn off IGBT, and the electric discharge speed of the size control gate electric current according to short circuit current
Degree, it is achieved soft switching, it is to avoid occur due to voltage spikes during shutoff, beyond the safety operation area of IGBT.
The present invention is for realizing goal of the invention, and the concrete scheme used is as follows:
A kind of intelligentized IGBT constant current driving device, turns including isolation DC-DC module, PLD digital control module, DAC digital-to-analogue
Die change block, controlled constant-current source, voltage ratio relatively logic circuit, gate leve current collection circuit and current ratio relatively logic circuit composition.One
Secondary side control part drive power supply and drive signal through isolation DC-DC module be secondary side provide isolation driving power supply and
Driving signal, the alarm signal of secondary side provides the alarm signal of isolation through isolation DC-DC module for primary side.Drive letter
Number, voltage ratio be connected with the input of PLD data signal compared with the output of logic circuit with current ratio compared with logic circuit, PLD's
Output is connected with the input of DAC D/A converter module, and it is defeated that DAC D/A converter module and subtraction circuit export with controlled constant-current source
Entering connected, the output of controlled constant-current source is connected through the gate leve of resistance Rg with IGBT that overdrive.
Isolation DC-DC module is mainly used in the isolation realizing between primary side and secondary side, on the one hand for realizing once
The isolation of power supply between side and secondary side, on the other hand for realize primary side and secondary side drive signal and alarm signal every
From transmission.
PLD digital control module is the core of whole system, penetrates step voltage Uce by detection collector current Ic and collection real
Time the state judging the residing work of IGBT, export corresponding data signal according to the duty of IGBT, control rear class system
Realize the closed-loop control of whole drive system.Its Main Function includes: it is optimum that (1) realizes the IGBT to different series different model
Control;(2) PWM is carried out digital filtering and suppresses short pulse;(3) according to IGBT duty, the discharge and recharge of IGBT grid is changed
Electric current improves switching characteristic, reduces Dead Time and switching loss;(4) comprehensive utilization VCEDetection and ICDetection difference one class is short
Road and the short circuit of two classes, select corresponding mode to turn off IGBT;(5) in the case of being short-circuited, can be according to short circuit current
The velocity of discharge of size control gate electric current, it is achieved soft switching, it is to avoid occur due to voltage spikes during shutoff, beyond the safe work of IGBT
Make district.
DAC D/A converter module is mainly used in being converted into the data signal that PLD exports the voltage signal of correspondence, as rear
The input of level controlled constant-current source, uses the high-speed digital-analog conversion chip of two-way output.DAC D/A converter module can also use by
Switching device and the circuit realiration digital-to-analogue conversion of corresponding resistance network composition, as shown in Figure 2 (a) shows, switching device S11-S1n's
One end with resistance R11-R1n respectively, one end is connected, and the other end is connected with resistance R10, and the data signal of PLD output is by controlling
Turning on and off of S11-S1n can export adjustable analog quantity Vref1, controls IGBT for the input as controllable constant-current source
Opening process.As shown in Fig. 2 (b), the input analog amount Vref2 of the turn off process constant-current source of IGBT, circuit structure and Vref1
Identical, this kind of digital-to-analogue conversion structure is complicated, and the voltage of output is linear not, but it is fast to perform speed, and cost performance is higher.
The Main Function of controlled constant current source module is to realize the accurate control to IGBT grid current, DAC module output
The set-point of analog quantity Vref1 and Vref2 grid current closed-loop system time respectively IGBT opens and when IGBT turns off, grid level
The feedback quantity that analog quantity VRg is grid current closed-loop system of current sampling circuit output.Controlled constant current source module is according to given
Value and feedback quantity, the grid current of real-time control IGBT, it is achieved IGBT grid current closed-loop control.
Step voltage U is penetrated in IGBT pole by voltage ratio relatively logic circuitCECarry out electric resistance partial pressure and compare with corresponding threshold value voltage
Relatively, the digital quantity after comparing gives PLD;The electric current flowing through IGBT emitter stage is filtered processing by current logic comparison circuit
And the digital quantity compared after comparing with corresponding threshold value voltage gives PLD;PLD passes through voltage logic circuit and current logic
The digital quantity of circuit output can judge the duty of IGBT accurately.
The Main Function of gate leve current collection circuit is to be filtered processing also to the electric current flowing through IGBT resistance Rg
It is sent to controlled constant current source module, as the input of controlled constant-current source.
The present invention intelligentized IGBT constant current driving device, IGBT opening process as shown in Figure 3: (1) is when PWM rising edge
During arrival, in T1 to the T2 stage, grid voltage UGE rises to U (th) (IGBT gate turn-on voltage) from negative pressure, with bigger driving
Streaming current, reduces and opens time delay, so can improve the response speed of system;(2) grid voltage reach VGE (th) it
After, electric current IC begins to ramp up, and IGBT enters linear zone, and from T2 to the T3 moment, electric current IC is directly proportional to gate drive voltage UGE,
The slope risen by controlling UGE can efficiently control the climbing of electric current IC, according to, pass through control gate
The charging current of electric capacity, can efficiently control the climbing of grid voltage, so efficiently control electric current IC climbing and
The Reverse recovery stress of diode;(3) after electric current IC reaches maximum, the voltage at module CE two ends begins to decline, from T4
To the T5 moment, its speed declined is determined by gate charging current, and charging current is the biggest, and UCE decrease speed is the fastest, due to
Turn-on consumption is approximately equal to the area of the triangle encircled a city when electric current rises and when collector voltage declines, so accelerating UCE's
Fall off rate, can shorten " Miller " effect duration, reduces the area that electric current IC and collector voltage UCE surrounds, from
And it is effectively reduced the turn-on consumption of IGBT.IGBT turn off process is as shown in Figure 4: (1) when PWM trailing edge arrives, at T1-
In the T2 stage, with the energy of bigger current draw grid, make UGE be reduced to Miller platform voltage as soon as possible, shorten turn-off delay,
IC and UCE will not be impacted by this period;(2) Miller platform is arrived, in the T2-T3 stage, due to Miller when grid voltage
The existence of platform, UCE starts slowly to rise, and IC continues to keep constant, needs the energy with bigger current draw grid, reduces
Miller platform duration;(3) penetrating step voltage UCE when pole and rise to certain threshold values, in the T3-T4 stage, UGE is from Muller platform
Drop to UGE(th), IC declines with speed quickly, and owing to there is stray inductance in major loop, too high IC rate of change can produce
Raw too high due to voltage spikes, in order to avoid when turning off, IGBT is caused damage by too high voltages spike, this stage needs employing less
The energy of current draw grid, reduce the rate of change of UGE, thus the rate of change of domination set electrode current IC, reduce voltage point
Peak.(4) when collector current IC is less than certain threshold values, in the T4-T5 stage, with the energy of bigger current draw grid, contracting
Short streaking current time, reduces turn-off power loss.
The one intelligentized IGBT constant current driving device that the present invention proposes, digital control as core with PLD, by detection
Collector current ICStep voltage U is penetrated with poleCEJudge the duty of IGBT accurately, according to the duty of IGBT, real-time
Change the charging current of IGBT grid, it is achieved the optimum control to IGBT, (1) is digital control as core with PLD, can be according to difference
The difference of model IGBT parameter regulates the output controlling loop automatically, it is achieved optimum to the IGBT of different series, different model
Control.(2) essence driving IGBT is exactly the control to IGBT grid current discharge and recharge, and this patent uses digital-control constant-flow source real-time
IGBT grid charging and discharging currents is carried out closed-loop control, on the one hand can limit the maximum of IGBT grid charging and discharging currents,
Prevent grid and whole IGBT from concussion occurring, on the other hand IGBT switching process can be realized optimized control.(3) exist
Effectively suppress the rate of change di/dt of IGBT collector current, due to voltage spikes when reducing current spike when opening and turn off,
On the basis of preventing IGBT because damaging beyond safety operation area, when reducing switching delay and Miller platform to greatest extent
Between, reduce switching loss, improve system effectiveness.(4) in the case of being short-circuited, a grade V can be penetrated according to IGBT poleCEAnd collection
Electrode current ICState distinguish a class short circuit and the short circuit of two classes, select corresponding mode turn off IGBT according to, and according to short circuit
The velocity of discharge of the size control gate electric current of electric current, it is achieved soft switching, it is to avoid due to voltage spikes occurs, beyond IGBT's during shutoff
Safety operation area.
A kind of intelligentized IGBT constant current driving device of the present invention, digital control as core with PLD, can be according to different model
The difference regulation of IGBT parameter controls the output in loop, it is achieved to different series, the IGBT optimum control of different model.
The present invention, what employing digital-control constant-flow source was real-time carries out closed-loop control, on the one hand energy to IGBT grid charging and discharging currents
Enough limit the maximum of IGBT grid charging and discharging currents, prevent grid and whole IGBT from concussion occurring, on the other hand by right
The closed-loop control that IGBT grid charging and discharging currents enters can realize the optimization controlling IGBT switching process.
The present invention intelligentized IGBT constant current driving device, is suppressing the rate of change di/ of IGBT collector current effectively
Dt, due to voltage spikes when reducing current spike when opening and turn off, prevent IGBT because of the base damaged beyond safety operation area
On plinth, reduce switching delay and Miller plateau time to greatest extent, reduce switching loss, improve system effectiveness.
The intelligent IGBT drive module of 4 present invention, in the case of being short-circuited, can penetrate a grade V according to IGBT poleCE
With collector current ICState distinguish a class short circuit and the short circuit of two classes, select corresponding mode turn off IGBT according to, and according to
The velocity of discharge of the size control gate electric current of short circuit current, it is achieved soft switching, it is to avoid due to voltage spikes occurs during shutoff, exceeds
The safety operation area of IGBT.
Accompanying drawing explanation
Fig. 1 is a kind of intelligentized IGBT constant current driving device circuit diagram of the present invention.
Fig. 2 is the D/A converting circuit schematic diagram that the present invention is realized by switching device and corresponding resistance network.Figure (a) is
IGBT opening process D/A converting circuit schematic diagram;Figure (b) is IGBT turn off process D/A converting circuit schematic diagram.
Fig. 3 is IGBT opening process schematic diagram.
Fig. 4 is IGBT turn off process schematic diagram.
Detailed description of the invention
With embodiment, the present invention is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 is a kind of intelligentized IGBT constant current driving device schematic diagram of the present invention, including isolation DC-DC module, PLD number
Word control module, DAC D/A converter module, controlled constant-current source, voltage ratio relatively logic circuit, gate leve current collection circuit and electric current
CL Compare Logic circuit forms.Drive power supply and the driving signal of primary side control part are the input isolating DC-DC module, are two
Secondary side provides the driving power supply of isolation and drives signal, and the positive voltage driving power supply through isolation DC-DC module is+VCC, negative
Voltage is-VEE, provides power supply for circuit such as rear class PLD digital control module, DAC D/A converter module, controlled constant-current sources;Two
The output of secondary side PLD digital control module is connected with the input of isolation DC-DC module, provides the alarm signal of isolation for primary side
Number.Isolation DC-DC module, voltage ratio are compared with defeated compared with the output of logic circuit and PLD data signal of logic circuit and current ratio
Entering end to be connected, the output of PLD is connected with the input of DAC D/A converter module, and DAC D/A converter module and gate leve electric current are adopted
Collector output is connected with the input of controlled constant-current source, and the output of controlled constant-current source is through overdriving resistance Rg's Yu IGBT
Grid is connected.
Fig. 2 be the present invention be to realize the number realized by switching device and corresponding resistance network of DAC digital-to-analogue conversion invention
Analog conversion circuit schematic diagram, as shown in Figure 2 (a) shows, one end of switching device S11-S1n respectively with one end phase of resistance R11-R1n
Even, the other end is connected with resistance R10, by control S11-S1n's, the data signal of PLD output turns on and off that can export can
Analog quantity Vref1 adjusted, for controlling the opening process of IGBT as the input in controllable constant-current source.As shown in Fig. 2 (b), IGBT
The input analog amount Vref2 of turn off process constant-current source, circuit structure is identical with Vref1, and this kind of digital-to-analogue conversion structure is complicated, defeated
The voltage gone out is linear not, but it is fast to perform speed, and cost performance is higher.
When normally working, the driving signal that intelligentized IGBT constant current driving device controls part according to primary side is efficient
Control turning on and off of IGBT.Intelligentized IGBT constant current driving device is with PLD digital control chip as core, according to voltage
CL Compare Logic circuit and current ratio are compared with the output valve of logic circuit, and the real-time duty judging IGBT, according to the work of IGBT
Make state, the input of real-time regulation controlled constant-current source, change the charging and discharging currents of IGBT grid, it is achieved the optimum control to IGBT
System.When being high level state when driving signal by low transition, IGBT is open-minded, and PLD digital control chip is according to the work of IGBT
Making state, the real-time input Vref1 controlling controlled constant-current source, thus control the opening process of IGBT efficiently, it is concrete
Opening process is as shown in Figure 3: (1), when PWM rising edge arrives, in T1 to the T2 stage, electric current IC=0, grid voltage UGE are from negative
Press and be raised to U (th) (IGBT gate turn-on voltage), the driving electric current that the output of IGBT constant current driving device is bigger, reduce to open and prolong
Late the time, so can improve the response speed of system;(2) after grid voltage reaches VGE (th), on electric current IC starts
Rising, IGBT enters linear zone, and from T2 to the T3 moment, electric current IC is directly proportional to gate drive voltage UGE, rises by controlling UGE
Slope can efficiently control the climbing of electric current IC, according to, by the charging current of control gate electric capacity,
The climbing of grid voltage can be efficiently controlled, and then efficiently control the climbing of electric current IC and the Reverse recovery of diode
Stress;(3) after electric current IC reaches maximum, the voltage at module CE two ends begins to decline, and from T4 to the T5 moment, it declines
Speed is determined by gate charging current, and charging current is the biggest, and UCE decrease speed is the fastest, owing to turn-on consumption is approximately equal to
The area of the triangle encircled a city when electric current rises and when collector voltage declines, so accelerating the fall off rate of UCE, can shorten
" Miller " effect duration, reduces the area that electric current IC and collector voltage UCE surrounds, thus is effectively reduced IGBT's
Turn-on consumption.When drive signal be converted to low level state by high level time, IGBT turn off, PLD digital control chip according to
The duty of IGBT, the real-time input Vref2 controlling controlled constant-current source, thus control the turn off process of IGBT efficiently,
Turn off process concrete for IGBT is as shown in Figure 4: (1), when PWM trailing edge arrives, in the T1-T2 stage, takes out with bigger electric current
Taking the energy of grid, make UGE be reduced to Miller platform voltage as soon as possible, shorten turn-off delay, this period will not be to IC and UCE
Impact;(2) arriving Miller platform when grid voltage, in the T2-T3 stage, due to the existence of Miller platform, UCE starts slowly
Rising, IC continues to keep constant, needs the energy with bigger current draw grid, reduces Miller platform duration;(3)
Penetrating step voltage UCE when pole and rise to certain threshold values, in the T3-T4 stage, UGE drops to UGE(th from Muller platform), IC is with quickly
Speed decline, owing to there is stray inductance in major loop, too high IC rate of change can produce too high due to voltage spikes, in order to keep away
When exempting to turn off, IGBT is caused damage by too high voltages spike, and this stage needs to use the energy of less current draw grid, fall
The rate of change of low UGE, thus the rate of change of domination set electrode current IC, reduce due to voltage spikes.(4) it is less than as collector current IC
During certain threshold values, in the T4-T5 stage, with the energy of bigger current draw grid, shorten the tail currents time, reduce and close breakdown
Consumption.
System be short-circuited fault time, intelligentized IGBT constant current driving device can penetrate grade VCE and collection according to IGBT pole
The state of electrode current IC distinguishes a class short circuit and the short circuit of two classes, select corresponding mode turn off IGBT according to, and according to short circuit
The velocity of discharge of the size control gate electric current of electric current, it is achieved soft switching, it is to avoid due to voltage spikes occurs, beyond IGBT's during shutoff
Safety operation area.When being high level when driving signal, and IGBT output loop occurs that short-circuit conditions, intelligentized IGBT constant current are driven
Dynamic device by voltage ratio compared with logic circuit and current ratio compared with the output valve of logic circuit, the real-time shape monitoring IGBT short circuit
State, according to the input Vref2 regulating controlled constant-current source that the size of short circuit current is real-time, changes the discharge current of IGBT grid,
The velocity of discharge of efficient control gate electric current, it is achieved soft switching, is avoiding the occurrence of due to voltage spikes beyond IGBT safety operation area
In the case of, turn off IGBT as soon as possible, reduce the energy impact suffered by IGBT in short-circuit process, thus at utmost in system
IGBT module is protected in the case of being short-circuited.Detect that system is short-circuited fault at intelligentized IGBT constant current driving device
Time, on the one hand can block the output driving signal at once, on the other hand alarm signal can be sent to once by DC-DC module
Side controls part, it is achieved the protection to whole system.
Claims (1)
1. an intelligentized IGBT constant current driving device, including isolation DC-DC module, PLD digital control module, DAC digital-to-analogue
Modular converter, controlled constant-current source, voltage ratio relatively logic circuit, gate leve current collection circuit and current ratio relatively logic circuit;It is special
Levy and be: drive power supply and the driving signal of primary side control part provide driving of isolation through isolation DC-DC module for secondary side
Dynamic power supply and driving signal, the alarm signal of secondary side provides the alarm signal of isolation through isolation DC-DC module for primary side;
Signal, voltage ratio is driven to be connected with the input of PLD data signal compared with the output of logic circuit with current ratio compared with logic circuit,
The output of PLD is connected with the input of DAC D/A converter module, DAC D/A converter module and subtraction circuit output and controlled constant current
The input in source is connected, and the output of controlled constant-current source is connected through the gate leve of resistance Rg with IGBT that overdrive.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610563586.1A CN105932864B (en) | 2016-07-18 | 2016-07-18 | A kind of intelligentized IGBT constant current driving device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610563586.1A CN105932864B (en) | 2016-07-18 | 2016-07-18 | A kind of intelligentized IGBT constant current driving device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105932864A true CN105932864A (en) | 2016-09-07 |
CN105932864B CN105932864B (en) | 2018-11-16 |
Family
ID=56827564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610563586.1A Active CN105932864B (en) | 2016-07-18 | 2016-07-18 | A kind of intelligentized IGBT constant current driving device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105932864B (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106849621A (en) * | 2017-01-03 | 2017-06-13 | 昂宝电子(上海)有限公司 | A kind of system and method for realizing gate driving circuit |
CN109714033A (en) * | 2019-02-22 | 2019-05-03 | 无锡瓴芯电子科技有限公司 | The driving device and method of power device |
CN110022141A (en) * | 2019-03-26 | 2019-07-16 | 瓴芯电子科技(无锡)有限公司 | The driving device of power device and the method for obtaining power device real-time status |
CN110474522A (en) * | 2019-08-19 | 2019-11-19 | 阳光电源股份有限公司 | A kind of more level analog driving circuits of I font and its soft breaking circuit |
CN111490528A (en) * | 2020-04-23 | 2020-08-04 | 国电南瑞科技股份有限公司 | Overcurrent protection device suitable for wide bandgap power device |
CN111525914A (en) * | 2020-02-17 | 2020-08-11 | 瓴芯电子科技(无锡)有限公司 | Driving device and method of power device |
CN113098241A (en) * | 2021-04-13 | 2021-07-09 | 浙江大学 | Closed-loop active driving circuit, driving method and switching power supply |
CN113433378A (en) * | 2020-03-23 | 2021-09-24 | 中车株洲电力机车研究所有限公司 | CE voltage detection device and method for IGBT |
CN113472184A (en) * | 2021-06-10 | 2021-10-01 | 矽力杰半导体技术(杭州)有限公司 | Driving method and driving circuit |
CN114448405A (en) * | 2021-12-30 | 2022-05-06 | 赛晶亚太半导体科技(浙江)有限公司 | IGBT grid self-adaptation actuating system |
CN114759767A (en) * | 2021-04-16 | 2022-07-15 | 安徽大学 | Intelligent gate driver for silicon carbide power module |
CN115021734A (en) * | 2022-06-22 | 2022-09-06 | 国网智能电网研究院有限公司 | An IGBT driver optimization method and system |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1256556A (en) * | 1998-12-03 | 2000-06-14 | 株式会社日立制作所 | Grid driving circuit of voltage-driven switch element |
CN101088221A (en) * | 2004-04-26 | 2007-12-12 | 勒图尔纽科技钻孔系统公司 | Adaptive gate drive for switching devices of inverter |
US20100060326A1 (en) * | 2006-09-13 | 2010-03-11 | Cambridge Enterprise Limited | Control of power semiconductor devices |
CN102315763A (en) * | 2011-09-08 | 2012-01-11 | 周卫国 | Intelligent power module having soft turn off function |
JP2015056979A (en) * | 2013-09-12 | 2015-03-23 | 東芝シュネデール・インバータ株式会社 | Gate drive circuit and power conversion device |
CN204633582U (en) * | 2015-03-13 | 2015-09-09 | 武汉征原电气有限公司 | Intelligent digital high-power IGBT driver |
CN205829454U (en) * | 2016-07-18 | 2016-12-21 | 南京埃斯顿自动控制技术有限公司 | A kind of intelligentized IGBT constant current driving device |
-
2016
- 2016-07-18 CN CN201610563586.1A patent/CN105932864B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1256556A (en) * | 1998-12-03 | 2000-06-14 | 株式会社日立制作所 | Grid driving circuit of voltage-driven switch element |
CN101088221A (en) * | 2004-04-26 | 2007-12-12 | 勒图尔纽科技钻孔系统公司 | Adaptive gate drive for switching devices of inverter |
US20100060326A1 (en) * | 2006-09-13 | 2010-03-11 | Cambridge Enterprise Limited | Control of power semiconductor devices |
CN102315763A (en) * | 2011-09-08 | 2012-01-11 | 周卫国 | Intelligent power module having soft turn off function |
JP2015056979A (en) * | 2013-09-12 | 2015-03-23 | 東芝シュネデール・インバータ株式会社 | Gate drive circuit and power conversion device |
CN204633582U (en) * | 2015-03-13 | 2015-09-09 | 武汉征原电气有限公司 | Intelligent digital high-power IGBT driver |
CN205829454U (en) * | 2016-07-18 | 2016-12-21 | 南京埃斯顿自动控制技术有限公司 | A kind of intelligentized IGBT constant current driving device |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106849621B (en) * | 2017-01-03 | 2019-05-28 | 昂宝电子(上海)有限公司 | A kind of system and method for realizing gate driving circuit |
CN106849621A (en) * | 2017-01-03 | 2017-06-13 | 昂宝电子(上海)有限公司 | A kind of system and method for realizing gate driving circuit |
CN109714033A (en) * | 2019-02-22 | 2019-05-03 | 无锡瓴芯电子科技有限公司 | The driving device and method of power device |
CN109714033B (en) * | 2019-02-22 | 2023-06-30 | 瓴芯电子科技(无锡)有限公司 | Driving device and method for power device |
CN110022141B (en) * | 2019-03-26 | 2023-12-12 | 瓴芯电子科技(无锡)有限公司 | Driving device of power device and method for acquiring real-time state of power device |
CN110022141A (en) * | 2019-03-26 | 2019-07-16 | 瓴芯电子科技(无锡)有限公司 | The driving device of power device and the method for obtaining power device real-time status |
CN110474522A (en) * | 2019-08-19 | 2019-11-19 | 阳光电源股份有限公司 | A kind of more level analog driving circuits of I font and its soft breaking circuit |
CN110474522B (en) * | 2019-08-19 | 2020-11-10 | 阳光电源股份有限公司 | I-shaped multi-level analog driving circuit and soft turn-off circuit thereof |
CN111525914A (en) * | 2020-02-17 | 2020-08-11 | 瓴芯电子科技(无锡)有限公司 | Driving device and method of power device |
CN113433378A (en) * | 2020-03-23 | 2021-09-24 | 中车株洲电力机车研究所有限公司 | CE voltage detection device and method for IGBT |
CN113433378B (en) * | 2020-03-23 | 2022-04-26 | 中车株洲电力机车研究所有限公司 | CE voltage detection device and method for IGBT |
CN111490528A (en) * | 2020-04-23 | 2020-08-04 | 国电南瑞科技股份有限公司 | Overcurrent protection device suitable for wide bandgap power device |
CN111490528B (en) * | 2020-04-23 | 2022-06-07 | 国电南瑞科技股份有限公司 | Overcurrent protection device suitable for wide bandgap power device |
CN113098241A (en) * | 2021-04-13 | 2021-07-09 | 浙江大学 | Closed-loop active driving circuit, driving method and switching power supply |
CN113098241B (en) * | 2021-04-13 | 2022-06-17 | 浙江大学 | A closed-loop active driving circuit, driving method and switching power supply |
CN114759767A (en) * | 2021-04-16 | 2022-07-15 | 安徽大学 | Intelligent gate driver for silicon carbide power module |
CN114759767B (en) * | 2021-04-16 | 2024-03-26 | 安徽大学 | Intelligent gate driver for silicon carbide power module |
CN113472184A (en) * | 2021-06-10 | 2021-10-01 | 矽力杰半导体技术(杭州)有限公司 | Driving method and driving circuit |
CN113472184B (en) * | 2021-06-10 | 2023-12-15 | 矽力杰半导体技术(杭州)有限公司 | Driving method and driving circuit |
CN114448405A (en) * | 2021-12-30 | 2022-05-06 | 赛晶亚太半导体科技(浙江)有限公司 | IGBT grid self-adaptation actuating system |
CN114448405B (en) * | 2021-12-30 | 2024-11-08 | 赛晶亚太半导体科技(浙江)有限公司 | An IGBT gate adaptive drive system |
CN115021734A (en) * | 2022-06-22 | 2022-09-06 | 国网智能电网研究院有限公司 | An IGBT driver optimization method and system |
Also Published As
Publication number | Publication date |
---|---|
CN105932864B (en) | 2018-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105932864A (en) | Intelligent IGBT (insulated gate bipolar transistor) constant-current driving device | |
CN111211762B (en) | A SiC MOSFET driving circuit with high turn-on performance | |
CN101617471B (en) | Control method and circuit for power semiconductor devices | |
CN205829454U (en) | A kind of intelligentized IGBT constant current driving device | |
CN100405738C (en) | Drive Protection Circuit of Reverse Resistance Insulated Gate Bipolar Transistor | |
CN110190838A (en) | A kind of SiC MOSFET short-circuit protection circuit and method based on short circuit current inhibition | |
CN101242136B (en) | Voltage source frequency converter bridge arm direct pass protector for three level integrated gate pole conversion transistor | |
CN204462763U (en) | A kind of drive and protection device of high-power IGBT | |
CN102315763B (en) | Intelligent power module having soft turn off function | |
CN109375087A (en) | A kind of protection circuit and method with high speed detection IGBT short trouble | |
CN101882927A (en) | A Soft Switching Device for AC Solid State Power Controller | |
CN201752109U (en) | Soft switch device of alternating current solid-state power controller | |
CN204013200U (en) | One is applicable to three-level current transformer IGBT drive circuit | |
CN104779593A (en) | Direct-current solid circuit breaker and control method thereof | |
CN202564928U (en) | Insulated gate bipolar transistor protection circuit | |
CN204633582U (en) | Intelligent digital high-power IGBT driver | |
CN109495102A (en) | A kind of SiC MOSFET one kind short circuit current suppression circuit and method | |
CN210297240U (en) | IGBT short-circuit fault rapid protection circuit | |
CN205377644U (en) | Three level IGBT drive circuit on T type | |
CN105490511A (en) | T-type three-level IGBT drive circuit | |
CN101950949A (en) | Short-circuit shutoff method for insulated gate bipolar transistor (IGBT) of high-power current transformer | |
CN209676209U (en) | A kind of SiC MOSFET one kind short circuit current suppression circuit | |
CN104767368A (en) | High-reliable tri-level inverter circuit current-limiting control method | |
CN110061480A (en) | A kind of full-time protection driver of rail traffic IGBT | |
CN209389689U (en) | Parallel intelligent DC protection switch |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190417 Address after: 211100 No. 155 General South Road, Jiangning Economic and Technological Development Zone, Nanjing City, Jiangsu Province Patentee after: Nanjing Estun Automation Co., Ltd. Address before: 211100 No. 155 General Avenue, Jiangning Economic Development Zone, Nanjing City, Jiangsu Province Patentee before: Nanjing Estun Automatic Control Technology Co., Ltd. |