CN105914279A - Diode with luminous bottom - Google Patents

Abstract

The invention discloses a bottom-emitting diode, which is characterized in that it comprises a substrate made of a transparent material, on which an anode conductive layer made of a transparent conductive material, an electroluminescence layer and a metal material are stacked sequentially. The cathode conductive layer made; the electroluminescent layer includes a hole injection layer, a hole transport layer, an EL layer, an electron transport layer and an electron injection layer from bottom to top; the positive electrode of the driving power is connected to the anode conductive layer, and the driving power The negative electrode of the anode is connected to the cathode conductive layer; the transparent conductive material for the anode conductive layer can be indium tin oxide, indium zinc oxide or zinc oxide; the transparent material for the substrate can be quartz glass, soda glass or mica. The present invention properly selects the material of the substrate and the material of the anode conductive layer, and specifies the thickness range of the two, so that the luminous efficiency of the diode can be guaranteed under the condition that the corresponding functions can be satisfied.

Description

a bottom emitting diode

technical field

The invention relates to an active optical device, in particular to a bottom-emitting diode.

Background technique

Diodes are often used in image display devices and photographic devices. For diodes in the prior art, if the substrate is at the bottom and the cathode conductive layer is at the top, the light emitted from the diode is emitted from the direction of the top cathode conductive layer. In the prior art, there are also diodes that emit light through the substrate. However, in the common manufacturing process of diodes, the substrate material is relatively thick, and most of the materials of the anode conductive layer have poor transparency, so the luminous efficiency of the bottom light-emitting diode is low.

Contents of the invention

Aiming at the deficiencies of the prior art, the invention discloses a bottom-emitting diode.

Technical scheme of the present invention is as follows:

A bottom-emitting diode is characterized in that it includes a substrate made of a transparent material, and an anode conductive layer made of a transparent conductive material, an electroluminescent layer and a cathode made of a metal material are sequentially stacked on the substrate Conductive layer; the electroluminescent layer includes a hole injection layer, a hole transport layer, an EL layer, an electron transport layer and an electron injection layer from bottom to top; the positive pole of the driving power is connected to the anode conductive layer, and the negative pole of the driving power is connected to the cathode Conductive layer; the transparent conductive material for the anode conductive layer can be indium tin oxide, indium zinc oxide or zinc oxide; the transparent material for the substrate can be quartz glass, soda glass or mica.

Its further technical solution is that the thickness of the anode conductive layer is 50-200 nm.

Its further technical solution is that the thickness of the substrate is 100-600 nm.

The beneficial technical effect of the present invention is:

The present invention properly selects the material of the substrate and the material of the anode conductive layer, and specifies the thickness range of the two, so that the luminous efficiency of the diode can be guaranteed under the condition that the corresponding functions can be satisfied.

Description of drawings

Fig. 1 is a schematic structural view of the present invention.

detailed description

Fig. 1 is a schematic structural view of the present invention. As shown in Figure 1, the present invention includes a substrate 1 made of transparent material, on which an anode conductive layer 2 made of transparent conductive material, an electroluminescent layer 3 and an anode layer made of a metal material are laminated in sequence. Cathode conductive layer 4; the electroluminescent layer 3 sequentially includes a hole injection layer 31, a hole transport layer 32, an EL layer 33, an electron transport layer 34 and an electron injection layer 35 from bottom to top; Layer 2, the negative pole of the drive power supply is connected to the cathode conductive layer 4; the transparent conductive material that makes the anode conductive layer 2 can be indium tin oxide, indium zinc oxide or zinc oxide; the transparent material that makes the substrate 1 can be quartz glass, calcium Sodium glass or mica.

When a voltage is applied to the anode conductive layer 2 and the cathode conductive layer 4, holes are injected from the anode conductive layer 2 to the electroluminescent layer 3, and electrons are injected from the cathode conductive layer 4 to the electroluminescent layer 3, and conduction is conducted from the anode. The light emitted in the electroluminescent layer 3 is extracted on the layer 2 side.

Preferably, the thickness of the anode conductive layer 2 is 50-200 nm. The thickness of the substrate 1 is 100-600 nm.

In addition, the electroluminescent layer 3 also includes a hole injection layer 31 that is driven by a power source to inject holes; a hole transport layer 21 that inputs holes to the EL layer 33 (ie, the light emitting layer) and blocks electrons; The EL layer 33 that combines electrons and holes to emit light; the electron transport layer 34 that transports electrons to the EL layer and blocks holes; and the electron injection layer 35 that injects electrons from a driving power source.

What is described above is only a preferred embodiment of the present invention, and the present invention is not limited to the above examples. It can be understood that other improvements and changes directly derived or conceived by those skilled in the art without departing from the spirit and concept of the present invention should be considered to be included in the protection scope of the present invention.

Claims (3)

1. the diode of a bottom-emission, it is characterised in that include the substrate (1) that transparent material is made, Anode conductive layer (2), electroluminescent that transparent conductive material is made it is sequentially laminated with on substrate (1) Layer (3) and the cathode conductive layer (4) being made up of metal material；Described electroluminescence layer (3) is from the bottom to top Include hole injection layer (31), hole transporting layer (32), EL layer (33), electron supplying layer (34) successively With electron injecting layer (35)；Drive positive pole jointed anode conductive layer (2) of power supply, drive the negative pole of power supply Connect cathode conductive layer (4)；Make the transparent conductive material of anode conductive layer (2) can be tin indium oxide, Indium zinc oxide or zinc oxide；Making the transparent material of substrate (1) can be that quartz glass, calcium receive glass Or Muscovitum.

2. the diode of bottom-emission as claimed in claim 1, it is characterised in that described anode conducting The thickness of layer (2) is 50～200nm.

3. the diode of bottom-emission as claimed in claim 1, it is characterised in that described substrate (1) Thickness be 100～600nm.