CN105914223A - Display panel manufacturing method and display panel - Google Patents
Display panel manufacturing method and display panel Download PDFInfo
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- CN105914223A CN105914223A CN201610290086.5A CN201610290086A CN105914223A CN 105914223 A CN105914223 A CN 105914223A CN 201610290086 A CN201610290086 A CN 201610290086A CN 105914223 A CN105914223 A CN 105914223A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 208000034699 Vitreous floaters Diseases 0.000 claims 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 238000002360 preparation method Methods 0.000 description 14
- 238000001259 photo etching Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 239000002253 acid Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000001723 curing Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention discloses a display panel manufacturing method and a display panel. The method comprises: providing a substrate; forming a pixel limitation layer with a plurality of openings on the substrate and an insulated column located on the pixel limitation layer; depositing and forming a first electrode layer in the openings; forming a luminescent layer on the first electrode layer; and forming a second electrode layer on the luminescent layer. According to the technical scheme, the problem is solved that the reflection electrode quality is decreased in the manufacturing process of the display panel in the prior art, the technology flow is decreased, and the production cost is reduced.
Description
Technical field
The present embodiments relate to Display Technique, particularly relate to manufacture method and the display surface of a kind of display floater
Plate.
Background technology
Organic Light Emitting Diode (OLED) has that self-luminous, low in energy consumption, reaction speed be very fast, contrast more
The features such as high and visual angle is wider, are applied in a new generation's Display Technique, are with a wide range of applications.
Existing OLED preparation flow, after planarization layer completes, whole of substrate uses physical sputtering method deposition
Obtain reflective electrode film layer, carry out photoetching and acid solution etching the most again, then complete two-layer organic film, i.e.
Pixel defining layer and the photoetching of insulated column layer and be heating and curing, treat that the operation of pixel defining layer and insulated column layer is complete
Cheng Hou, just carries out luminescent material evaporation.
In OLED preparation process on existing display floater, whole of reflecting electrode deposition, light requirement is carved and acid solution
Just can form pixel confining layers after etching, therefore reflective electrode surface and side all may be affected by acid liquid corrosion,
And reflecting electrode preparation is accomplished to the placement before luminescent material evaporation, and the oxidation etc. of reflecting electrode can be caused to ask
Topic, causes OLED hydraulic performance decline.
Summary of the invention
The invention discloses manufacture method and the display floater of display floater, to solve during manufacture craft
Impact on reflecting electrode causes quality to decline problem.
First aspect, embodiments provides the manufacture method of a kind of display floater, including:
Substrate is provided；
Formed on the substrate and there is the pixel confining layers of multiple opening and be positioned in described pixel confining layers
Insulated column；
In described opening, deposit forms the first electrode layer；
Described first electrode layer is formed luminescent layer；
Form the second electrode lay on the light-emitting layer.
Second aspect, the embodiment of the present invention additionally provides a kind of display floater, by showing in above-mentioned first aspect
Show that the manufacture method of panel is fabricated by.
The present invention is by, after forming pixel confining layers and being positioned at the insulated column in pixel confining layers, being formed
First electrode layer, can solve pixel confining layers forming process and use photoetching process to cause the electricity of the first electrode layer
The problem that superfine product matter declines, such as the etching acid solution of the use in photoetching process and heat curing process cause electricity
The problem that the quality of pole declines.It addition, deposit forms the first electrode layer in pixel confining layers opening, with existing
Have technology to need to use the techniques such as photoetching and etching to form the first electrode layer to compare, it is possible to reduce technological process,
Reduce production cost.
Accompanying drawing explanation
Fig. 1 a is the schematic flow sheet of the manufacture method of the first display floater that the embodiment of the present invention provides；
Fig. 1 b-1e is the profile of preparation method each step counter structure of the display floater in Fig. 1 a；
Fig. 2 is the structure of a kind of display floater that the display floater manufacture method that the embodiment of the present invention provides is formed
Schematic diagram；
Fig. 3 is the knot of another display floater that the display floater manufacture method that the embodiment of the present invention provides is formed
Structure schematic diagram；
Fig. 4 a is the knot of the passive type display floater that the display floater manufacture method that the embodiment of the present invention provides is formed
Structure schematic diagram；
Fig. 4 b is the schematic flow sheet of the manufacture method of passive type display floater shown in Fig. 4 a；
Fig. 4 c-4e is the schematic diagram of preparation method each step counter structure of the display floater in Fig. 4 b；
Fig. 5 a is the knot of the active display panel that the display floater manufacture method that the embodiment of the present invention provides is formed
Structure schematic diagram；
Fig. 5 b is the schematic flow sheet of the manufacture method of active display panel shown in Fig. 5 a；
Fig. 5 c-5h is the profile of preparation method each step counter structure of the display floater in Fig. 5 b.
Detailed description of the invention
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings.It is understood that this
Specific embodiment described by place is used only for explaining the present invention, rather than limitation of the invention.The most also need
It is noted that for the ease of describing, accompanying drawing illustrate only part related to the present invention and not all knot
Structure.
Fig. 1 a is the schematic flow sheet of the manufacture method of a kind of display floater that the embodiment of the present invention provides, figure
1b-1e is the profile of preparation method each step counter structure of the display floater in Fig. 1 a.Below in conjunction with aobvious
Show that the profile of preparation method each step counter structure of panel is discussed in detail the display that the embodiment of the present invention provides
The preparation method of panel.Seeing Fig. 1 a, the method specifically includes following steps:
S110, offer substrate.
Described substrate is preferably glass substrate.
S120, on the substrate formation have the pixel confining layers of multiple opening and are positioned at described pixel limit
Insulated column in given layer.
See Fig. 1 b, can have multiple opening 122 by photoetching and etching technics in substrate 11 formation
Pixel confining layers 121, and be positioned at the insulated column 13 above pixel confining layers 121.Pixel confining layers 121
For limiting multiple pixel cell, the corresponding pixel cell of the most each opening 122.For strengthening stability,
Can also heat after the pixel confining layers 121 completing there is multiple opening 122 and insulated column 13
Curing process.The material of pixel confining layers 121 and insulated column 13 is insulating materials, known in the art
What suitable insulating materials is used equally to this pixel confining layers 121 and insulated column 13.Such as pixel confining layers
121 and insulated column 13 can also is that organic insulation.
It should be noted that have the pixel confining layers 121 of multiple opening 122 and insulated column 13 can with
One manufacture craft is made up of same material, such as can by exposure, develop and the photoetching process such as etching with
Time formed there is the pixel confining layers 121 of multiple opening 122 and be positioned at the isolation in pixel confining layers 121
Post 13.Can also independently form in twice technique, i.e. by exposure, develop and the photoetching process shape such as etching
After becoming to have the pixel confining layers 121 of multiple opening 122, again by exposure, develop and the photoetching such as etching
Technique forms insulated column 13 in pixel confining layers 121.Employing exemplary for Fig. 1 b is single in twice technique
Solely formed and there is the pixel confining layers 121 of multiple opening 122 and be positioned at the isolation in pixel confining layers 121
Post 13.
S130, in described opening deposit formed the first electrode layer.
See Fig. 1 c, mask plate can be used, in the opening 122 of pixel confining layers 121, deposit formation the
One electrode layer 14.Specifically, vapor deposition or sputtering deposit technique can be passed through, be formed in opening 122
First electrode layer 14.
S140, on described first electrode layer formed luminescent layer.
See Fig. 1 d, vapor deposition, sputtering deposit or spin-on deposition technique can be passed through, at the first electrode layer
Luminescent layer 15 is formed on 14.Concrete, luminescent layer 15 can be luminous organic material.
S150, form the second electrode lay on the light-emitting layer.
See Fig. 1 e, evaporation process can be used to form the second electrode lay 16 on luminescent layer 15.
In the present embodiment, due to formed pixel confining layers and be positioned at the insulated column in pixel confining layers it
Rear formation the first electrode layer, compared to being initially formed the first electrode layer in prior art, then forms pixel confining layers
And it is positioned at the insulated column in pixel confining layers, pixel confining layers forming process can be solved and use photoetching process
Cause the problem that the electrode quality of the first electrode layer declines.Such as in preparation pixel confining layers and insulated column mistake
Etching acid solution that photoetching process in journey uses and being heating and curing cause the quality of the first electrode layer decline (aoxidize,
Sulfuration and rough surface increase etc.) problem.The present embodiment deposits formation in pixel confining layers opening
One electrode layer, with prior art use film forming, exposes, develop and the technique such as etching forms electrode layer, no
Only with Simplified flowsheet, and can avoid the bad shadow that the first electrode layer is produced by acid solution in etching process
Ring, such as, the first electrode layer burn into is produced cavity etc..Additionally, the embodiment of the present invention is formed the first electricity
The technological process of pole layer is adjacent with the technological process forming luminescent layer, therefore after deposit forms the first electrode layer,
The preparation of follow-up luminescent layer can also be formed by consecutive deposition, decreases sudden and violent in external environment condition of the first electrode layer
The dew time, solve oxidation and sulfuration that the first electrode layer causes because of single dwell course in external environment condition
Etc. problem.Therefore the manufacture method of the display floater that the embodiment of the present invention provides improves properties of product and yield,
Decrease technological process, reduce production cost.
On the basis of above-described embodiment, due to formed on the substrate 11 pixel confining layers 121, separation layer 13,
Before first electrode layer 14, luminescent layer 15 and the second electrode lay 16, it is also possible to form other functional membranes
Layer, such as some metal lead wires.After the formation of these functional film layer can cause surface irregularity, and then impact
The display effect of continuous display floater.Therefore, the embodiment of the present invention preferably in step S120, at described substrate
Before upper formation has the pixel confining layers of multiple opening and is positioned at the insulated column in described pixel confining layers,
Also include: form planarization layer on the substrate.The material of planarization layer is also insulating materials.In preparation
In technological process, planarization layer can use single manufacturing process.For reducing manufacturing process, improve and produce
Efficiency can also be made planarization layer by same material in same manufacture craft and have multiple opening 122
Pixel confining layers 121.Further, it is also possible in same manufacture craft by same material make planarization layer,
There is the pixel confining layers 121 of multiple opening 122, and the insulated column 13 being positioned in pixel confining layers 121.
In an embodiment of the present embodiment, seeing Fig. 2, the first electrode layer 15 is metallic reflector,
The material that magnesium silver isoreflectance is high can be used.The second electrode lay 16 is transparency conducting layer, concretely aoxidizes
Indium tin nesa coating.Owing to metallic reflector has the effect of reflection light, the light that luminescent layer 15 produces, warp
After the reflection of the first electrode layer 14, penetrate from the second electrode lay 16.Arrow in figure represents display floater
Light emission direction.As shown in Figure 2, the display floater that the present embodiment provides is emission structure at top.
In the another embodiment of the present embodiment, seeing Fig. 3, the first electrode layer 14 is transparency conducting layer,
Described the second electrode lay 16 is metallic reflector.Relative to above-mentioned emission structure at top, luminescent layer 15 produces
Light, after the second electrode lay 16 reflects, penetrates from the first electrode layer 14.Arrow in figure represents display surface
The light emission direction of plate.From the figure 3, it may be seen that the display floater that the present embodiment provides is bottom emitting structure.
Exemplary in Fig. 2 and Fig. 3 show planarization layer 17.
It should be noted that the manufacture method of the display floater of embodiment of the present invention offer can be prepared active
OLED display panel, it is also possible to prepare passive type OLED display panel.
Fig. 4 a is the knot of the passive type display floater that the display floater manufacture method that the embodiment of the present invention provides is formed
Structure schematic diagram.Fig. 4 b is the schematic flow sheet of the manufacture method of passive type display floater shown in Fig. 4 a.Fig. 4 c-
Fig. 4 e is the schematic diagram of preparation method each step counter structure of the display floater in Fig. 4 b.See Fig. 4 a,
Unlike the display panel structure in above-described embodiment, the first electrode layer 14 includes multiple arranged in parallel
First sub-electrode 141.The second electrode lay 16 includes multiple second sub-electrode 161 arranged in parallel, the first son
Electrode 141 and described second sub-electrode 161 insulation intersect.Seeing Fig. 4 b, the method specifically includes following step
Rapid:
S210, offer substrate.
S220, form planarization layer on the substrate.
S230, on described planarization layer formed there is the pixel confining layers of multiple opening and be positioned at described picture
Insulated column in element confining layers.
See Fig. 4 c, after forming planarization layer 17 on the substrate 11, planarization layer 17 is formed and has
The pixel confining layers 121 of multiple openings 122, and the insulated column 13 being positioned in pixel confining layers 121.
S240, in described opening deposit formed the first electrode layer, wherein, described first electrode layer includes many
Individual first sub-electrode arranged in parallel.
Seeing Fig. 4 d, in the opening of pixel confining layers, deposit forms the first electrode layer 14, the first electricity of formation
Pole layer 14 includes multiple first sub-electrode 141 arranged in parallel.
S250, on described first electrode layer formed luminescent layer.
See Fig. 4 e, the first electrode layer 14 is formed luminescent layer 15.
S260, forming the second electrode lay on the light-emitting layer, wherein, the second electrode lay includes multiple parallel
Second sub-electrode of arrangement.
Seeing Fig. 4 a, form the second electrode lay 16 on luminescent layer 15, the second electrode lay 16 of formation includes
Multiple second sub-electrodes 161 arranged in parallel.First sub-electrode 141 and the second sub-electrode 161 cross arrangement.
In the passive type display floater that said method is formed, display floater includes N row the second sub-electrode and M row
First sub-electrode (Fig. 4 a exemplary 5 row the second sub-electrodes and 5 row the first sub-electrodes are set).Use by
The mode of row scanning, applies pulse cyclically to often row the second electrode, executes to all row the first sub-electrodes simultaneously
Add drive current, thus realize the display of pixel line by line.
Fig. 5 a is the knot of the active display panel that the display floater manufacture method that the embodiment of the present invention provides is formed
Structure schematic diagram.Fig. 5 b is the schematic flow sheet of the manufacture method of active display panel shown in Fig. 5 a.Fig. 5 c-
Fig. 5 h is the profile of preparation method each step counter structure of the display floater in Fig. 5 b.
Seeing Fig. 5 a, unlike the display panel structure in above-described embodiment, active display panel is also
Including forming transistor array 18 on the substrate.First electrode layer 14 includes the first of matrix arrangement
Sub-electrode 141, and each first sub-electrode 141 electrically connects with a transistor.The second electrode lay 16 is planar
Electrode (hardware and software platform layer, pixel confining layers and insulated column are not shown).See Fig. 5 b, the method specifically include as
Lower step:
S310, offer substrate.
S320, form transistor array on the substrate.
See Fig. 5 c, photoetching process can be used to form transistor array 18 on the substrate 11.
S330, in described transistor array formed planarization layer.
See Fig. 5 d, transistor array 18 is formed planarization layer 17.
S340, on described planarization layer formed there is the pixel confining layers of multiple opening and be positioned at described picture
Insulated column in element confining layers.
See Fig. 5 e, can by exposure, develop and the photoetching process such as etching is formed at planarization layer 17 and to have
The pixel confining layers 121 of multiple openings 122 and the insulated column 13 being positioned in pixel confining layers 121.
S350, in described opening deposit formed the first electrode layer, wherein said first electrode layer includes matrix
First sub-electrode of formula arrangement, and each described first sub-electrode and a transistor electrically connect.
Seeing Fig. 5 f, in pixel confining layers opening 122, deposit forms the first electrode layer 14.First electrode layer
14 the first sub-electrodes 141 including matrix arrangement.Each first sub-electrode 141 is by planarization layer 17
Via and a transistor connect.
S360, on described first electrode layer formed luminescent layer.
See Fig. 5 g, form luminescent layer 15 at the first electrode layer 14.
S370, forming the second electrode lay on the light-emitting layer, described the second electrode lay is plane-shape electrode.
Seeing Fig. 5 h, form the second electrode lay 16 on luminescent layer 15, the second electrode lay 16 is plane-shape electrode.
In the active display panel that said method is formed, in the opening 122 of each pixel confining layers 121 the
The corresponding pixel cell of one sub-electrode 141, by controlling opening and disconnecting of each transistor, Xiang Yujing
The first sub-electrode 141 that body pipe connects applies to drive electric current, and the opening 122 controlling pixel confining layers 121 is right
The pixel cell answered sends the light of respective color, each first sub-electrode 141 independently can be adjusted and
Control.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.Those skilled in the art
It will be appreciated that the invention is not restricted to specific embodiment described here, can enter for a person skilled in the art
Row various obvious changes, readjust and substitute without departing from protection scope of the present invention.Therefore, though
So by above example, the present invention is described in further detail, but the present invention be not limited only to
Upper embodiment, without departing from the inventive concept, it is also possible to include other Equivalent embodiments more,
And the scope of the present invention is determined by scope of the appended claims.
Claims (13)
1. the manufacture method of a display floater, it is characterised in that including:
Substrate is provided；
Formed on the substrate and there is the pixel confining layers of multiple opening and be positioned in described pixel confining layers
Insulated column；
In described opening, deposit forms the first electrode layer；
Described first electrode layer is formed luminescent layer；
Form the second electrode lay on the light-emitting layer.
Method the most according to claim 1, it is characterised in that described first electrode layer is metallic reflection
Layer；Described the second electrode lay is transparency conducting layer.
Method the most according to claim 1, it is characterised in that described first electrode layer is electrically conducting transparent
Layer, described second electrode is metallic reflector.
Method the most according to claim 1, it is characterised in that described deposit formation in described opening
First electrode layer, including:
By vapor deposition or sputtering deposit technique, in described opening, form the first electrode layer.
Method the most according to claim 1, it is characterised in that described shape on described first electrode layer
Become luminescent layer, including:
By vapor deposition, sputtering deposit or spin-on deposition technique, described first electrode layer is formed and sends out
Photosphere.
Method the most according to claim 1, it is characterised in that formation has multiple on the substrate
The pixel confining layers of opening and before being positioned at the insulated column in described pixel confining layers, also includes:
Form planarization layer on the substrate.
Method the most according to claim 1, it is characterised in that also wrapped before forming described insulated column
Include:
Planarization layer and the described pixel limit with multiple opening is made by same material in same manufacture craft
Given layer, wherein, described in there is the pixel confining layers of multiple opening be positioned at above described planarization layer.
Method the most according to claim 1, it is characterised in that described pixel confining layers and described isolation
Post is made up of same material in same manufacture craft.
Method the most according to claim 1, it is characterised in that described pixel confining layers and described substrate
Between be additionally provided with planarization layer；
Described planarization layer, described in there is the pixel confining layers of multiple opening and described insulated column in same system
Make technique is made up of same material.
Method the most according to claim 1, it is characterised in that described luminescent layer is organic light emission material
Material.
11. methods according to claim 1, it is characterised in that described first electrode layer includes multiple
First sub-electrode arranged in parallel, described the second electrode lay includes multiple second sub-electrode arranged in parallel, institute
State the first sub-electrode and described second sub-electrode insulation intersects.
12. methods according to claim 1, it is characterised in that formation has many on the substrate
The pixel confining layers of individual opening and before being positioned at the insulated column in described pixel confining layers, is additionally included in described
Transistor array is formed on substrate；
Wherein, described first electrode layer includes the first sub-electrode of matrix arrangement, and each described first son
Electrode and transistor electrical connection, described the second electrode lay is plane-shape electrode.
13. 1 kinds of display floaters, it is characterised in that by the method manufacture described in any one of claim 1-12
Form.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107393946A (en) * | 2017-07-31 | 2017-11-24 | 京东方科技集团股份有限公司 | A kind of organic LED display panel and preparation method thereof |
| CN107565040A (en) * | 2017-08-30 | 2018-01-09 | 深圳市华星光电半导体显示技术有限公司 | Oled substrate and preparation method thereof |
| CN108598274A (en) * | 2018-05-15 | 2018-09-28 | 上海瀚莅电子科技有限公司 | QLED light-emitting display devices and preparation method thereof |
| CN108832009A (en) * | 2018-05-29 | 2018-11-16 | 深圳市华星光电半导体显示技术有限公司 | A kind of preparation method of inkjet printing AMOLED display panel |
| CN108922867A (en) * | 2018-06-25 | 2018-11-30 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN109065749A (en) * | 2018-07-23 | 2018-12-21 | 武汉华星光电半导体显示技术有限公司 | OLED display |
| CN109257943A (en) * | 2017-05-12 | 2019-01-22 | 京东方科技集团股份有限公司 | The driving method and manufacturing method of organic LED display panel and equipment and organic LED display panel |
| CN109427846A (en) * | 2017-08-28 | 2019-03-05 | 上海和辉光电有限公司 | A kind of array substrate and preparation method thereof, display panel, display device |
| CN109585523A (en) * | 2019-01-03 | 2019-04-05 | 京东方科技集团股份有限公司 | Pixel defining layer and the production method of display panel, display panel |
| CN110137226A (en) * | 2019-05-05 | 2019-08-16 | 深圳市华星光电半导体显示技术有限公司 | Substrate, manufacturing method and the peel plate of the electroluminescent Organic Light Emitting Diode of passive type |
| CN110827762A (en) * | 2018-08-14 | 2020-02-21 | 云谷（固安）科技有限公司 | Display panel, display screen, control method of display screen and display terminal |
| US10651250B2 (en) | 2018-06-25 | 2020-05-12 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and method for manufacturing same |
| CN111162189A (en) * | 2018-11-07 | 2020-05-15 | 广东聚华印刷显示技术有限公司 | Light-emitting device, preparation method thereof and mask |
| US10692945B2 (en) | 2018-05-29 | 2020-06-23 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Manufacturing method for an inkjet printing AMOLED display panel |
| EP3555922A4 (en) * | 2016-12-16 | 2020-08-12 | Boe Technology Group Co. Ltd. | DISPLAY SUBSTRATE WITH ORGANIC LIGHT-EMITTING DIODES, DISPLAY DEVICE WITH ORGANIC LIGHT-EMITTING DIODES, AND METHOD FOR MANUFACTURING THE DISPLAY SUBSTRATE WITH ORGANIC LIGHT-EMITTING DIODES |
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Effective date of registration: 20211027 Address after: No.8, liufangyuan Henglu, Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: WUHAN TIANMA MICROELECTRONICS Co.,Ltd. Patentee after: Wuhan Tianma Microelectronics Co.,Ltd. Shanghai Branch Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: Room 509, building 1, No. 6111, Longdong Avenue, Pudong New Area, Shanghai, 200120 Patentee before: SHANGHAI TIANMA AM-OLED Co.,Ltd. Patentee before: Tianma Micro-Electronics Co.,Ltd. |