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CN105896311B - A kind of white light laser closing beam technology based on semiconductor laser - Google Patents

A kind of white light laser closing beam technology based on semiconductor laser Download PDF

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Publication number
CN105896311B
CN105896311B CN201610457474.8A CN201610457474A CN105896311B CN 105896311 B CN105896311 B CN 105896311B CN 201610457474 A CN201610457474 A CN 201610457474A CN 105896311 B CN105896311 B CN 105896311B
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laser
axis collimation
collimation lens
semiconductor laser
spectroscopes
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CN105896311A (en
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董洪斌
张巍
张辰
孙婷婷
刘大巍
白戎
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Yangzhou Yangxin Laser Technology Co., Ltd.
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CHANGCHUN DEXIN PHOTOELECTRIC TECHNOLOGY CO LTD
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Surgery Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

A kind of white light laser closing beam technology based on semiconductor laser of the present invention, belongs to sharp combiner technical field.The present invention uses advanced sharp combiner technology, it is respectively 450nm to make three kinds of wavelength, 520nm, 650nm semiconductor lasers transmit in the same direction through fast axis collimation, slow axis collimation, in same vertical direction, same hot spot is focused on through achromatism condenser lens, white light laser is obtained, rear end can coupled into optical fibres or other device transmissions.Three kinds of wavelength lasers are detected respectively using photodetector, and are converted to electric signal, laser driving can be passed to and ensure the stability of laser power and the stability of three kinds of wavelength laser mixed proportions by adjusting each wavelength units laser light source.The white light laser of this structure can be applied to obtain different capacity parameter white light laser, be widely used in the fields such as wireless laser communication, laser lighting, laser imaging, laser display.

Description

A kind of white light laser closing beam technology based on semiconductor laser
Technical field
The invention belongs to swash combiner technical field, especially relate to a kind of based on the white of semiconductor laser conjunction beam technology Light laser.
Background technology
Laser is the another important invention of the mankind after atomic energy, computer, semiconductor, the 1960s come out with Come, plays an increasingly important role already in communication, medical treatment, processing and other fields.
The characteristics of conventional laser application industry, the overwhelming majority is using high monochromaticity, using mono-colour laser as light source, Such as medical field, the one-wavelength laser of different wave length, symptomatic treatment is used to can reach good therapeutic effect for different lesions; Manufacture field is cut, the operations such as mark using the higher 1064nm near-infrared lasers of Metal absorption efficiency, reaches processing effect Rate is high, high-quality, energy saving purpose.
And the laser application neck of emerging wireless laser communication, laser lighting, laser imaging, laser display etc. in recent years The application in domain, one-wavelength laser is greatly limited.The advantages that expand laser application field, making full use of laser high brightness, Scientist and engineers have started to develop white laser light source.
In field of laser illumination, the vertical university's experiment of State of Arizona, US shows extremely voluminous using every watt of White-light LED illumination Raw 150 lumens, and every watt of white laser can generate 400 lumens, can also be brought than conventional display color furthermore with white laser More bright-coloured, the higher display of contrast.In laser far-distance night-vision illumination system, white light laser illumination can also obtain The coloured image that traditional infrared laser lighting can not obtain.
In wireless laser communication field, one potential application of white laser is " Li-Fi ", even if using up an equipment networking, It can be 10 times faster than Wi-Fi or more.And at present for the research of Li-Fi using LED light source, and use white laser as light The Li-Fi in source will be 10 times faster than LED or more.
The characteristics of due to laser build-in attribute and monochromaticjty, the research and development rare breakthrough always of white laser.And recently as The development of laser technology and maturation, scientists and engineers gradually make progress in the exploitation of white laser light source.
The generation generally use red, green, blue three primary colours wave band of laser of white laser is mixed in a certain ratio at present.The U.S. It maintains the leading position in the field, Arizona State University develops a kind of novel semiconductor nano thin slice, can send out simultaneously Go out three kinds of wave band of laser of red, green, blue, when three kinds of laser meet, occurs as soon as white laser.But domestic expert points out, the achievement mesh Preceding is in laboratory stage, and also belongs to the mode that tricolor laser is mixed into white laser.
In white laser research field, the R&D institutions such as domestic colleges and universities, research institute and some business units are also researching and developing And obtain certain achievement.Equally be to mix three kinds of wave band of laser of red, green, blue to obtain white lasers, domestic difference research units and Enterprise uses different modes.
Traditional approach has to be mixed using three wavelength solid state lasers, or using the pumping mixed dye output of a branch of one-wavelength laser Red, green, blue three primary colours, and mix acquisition white light laser.Its main feature is that technology maturation, power is higher, but usually this laser Device size is larger, and structure is more complex, and laser stability is poor.
Novel mode has by the way of optical-fiber bundling or the semiconductor laser of spectrum beam combination, polarization coupling closes the side of beam Tricolor laser is mixed and obtains white light laser by formula.Compared with traditional approach, novel white light laser acquisition pattern simplifies Laser structure is more easy to realize white light laser miniaturization, facilitates laser aobvious in wireless laser communication, laser imaging, laser Show the application in equal fields.But compared with traditional technology, domestic novel white light laser obtains technology and is in the starting stage, need into One step is developed and optimization.
We close beam technology using the technology and mode different from the above developmental achievement, based on semiconductor laser, using one The new semiconductor laser of kind closes beam mode and structure, has invented a kind of novel semi-conductor white light laser.
Invention content
A kind of white light laser closing beam technology based on semiconductor laser, it is characterized in that:Including the heat sink, 450nm of step type Semiconductor laser light resource, 450nm fast axis collimation lens, 450nm slow axis collimation lens, 450nm speculums, 450nm spectroscopes, 450nm detectors, 520nm semiconductor laser light resources, 520nm fast axis collimation lens, 520nm slow axis collimation lens, 520nm reflections Mirror, 520nm spectroscopes, 520nm detectors, 650nm semiconductor laser light resources, 650nm fast axis collimation lens, 650nm slow axis are accurate Straight lens, 650nm speculums, 650nm spectroscopes, 650nm detectors and achromatism condenser lens, what the step type was heat sink is upper Surface is in three layers of step structure, respectively highest flight, intermediate flight and minimum flight;On the highest flight It is installed with 450nm semiconductor laser light resources, 450nm fast axis collimation lens, 450nm slow axis collimation lens, 450nm point successively Light microscopic, 450nm detectors and 450nm speculums;It is installed with 520nm semiconductor lasers successively on the intermediate flight Source, 520nm fast axis collimation lens, 520nm slow axis collimation lens, 520nm spectroscopes, 520nm detectors and 520nm speculums; 650nm semiconductor laser light resources, 650nm fast axis collimation lens, 650nm slow axis are installed on the minimum flight successively Collimation lens, 650nm spectroscopes, 650nm detectors and 650nm speculums;
The 450nm semiconductor laser light resources emit blue laser, and it is accurate to carry out fast axle by 450nm fast axis collimation lens Directly, slow axis collimation is carried out using 450nm slow axis collimation lenses, then with 45 ° of incident angles to 450nm speculums, light path Direction changes 90 °, is incident to achromatism condenser lens;The 450nm spectroscopes be fixedly mounted on 450nm slow axis collimation lens with Between 450nm speculums, laser light incident that 450nm spectroscopes reflect to 450nm detectors;The 450nm detectors pass through Conducting wire is connect with laser driver;
The 520nm semiconductor laser light resources emit green laser, and it is accurate to carry out fast axle by 520nm fast axis collimation lens Directly, slow axis collimation is carried out using 520nm slow axis collimation lenses, then with 45 ° of incident angles to 520nm speculums, light path Direction changes 90 °, is incident to achromatism condenser lens;The 520nm spectroscopes be fixedly mounted on 520nm slow axis collimation lens with Between 520nm speculums, laser light incident that 520nm spectroscopes reflect to 520nm detectors;The 520nm detectors pass through Conducting wire is connect with laser driver;
It is accurate to carry out fast axle by 650nm fast axis collimation lens for the 650nm semiconductor laser light resources transmitting red laser beam Directly, slow axis collimation is carried out using 650nm slow axis collimation lenses, then with 45 ° of incident angles to 650nm speculums, light path Direction changes 90 °, is incident to achromatism condenser lens;The 650nm spectroscopes be fixedly mounted on 650nm slow axis collimation lens with Between 650nm speculums, laser light incident that 650nm spectroscopes reflect to 650nm detectors;The 650nm detectors pass through Conducting wire is connect with laser driver;
The achromatism condenser lens is located at stepped heat sink side, and achromatism condenser lens gathers three kinds of wavelength lasers Coke arrives same hot spot, is mixed into white light laser, and export;The laser driver is swashed by conducting wire and 450nm semiconductors respectively Radiant, 520nm semiconductor laser light resources and the connection of 650nm semiconductor laser light resources.
Three kinds of wavelength lasers for being incident to achromatism condenser lens are propagated in the same direction in same perpendicular.
Difference in height between the intermediate flight and highest flight is 1mm, intermediate flight and minimum flight it Between difference in height be 1mm.
The 450nm fast axis collimation lens, 520nm fast axis collimation lens and 650nm fast axis collimation lens are that section is D The aspherical focal lens of shape.
The 450nm slow axis collimation lens, 520nm slow axis collimation lens and 650nm slow axis collimation lenses are that section is D The spherical surface focusing cylindrical lens of shape.
The 450nm speculums, 520nm speculums and 650nm speculums are plane mirror.
The 450nm spectroscopes, 520nm spectroscopes and 650nm spectroscopes are flat glass mirror.
By above-mentioned design scheme, the present invention can bring following advantageous effect:
Step type in the present invention is heat sink by forge piece of step type structure optimization design, make wavelength be respectively 450nm, 520nm, The three beams of laser of 650nm is propagated in the same direction in same vertical direction;Achromatism condenser lens is used using achromat-design In three kinds of wavelength lasers are focused on same focus, white light laser is generated.A kind of focal beam spot very little is obtained through the invention White light laser, rear end can coupled into optical fibres or other device transmissions.
The photodetector that the present invention is arranged, the detection to each wavelength laser power, and it is real-time by laser driver Each wavelength laser power is adjusted, ensures the stability of laser operation, while also ensuring the steady of each wavelength laser transmission ratio It is qualitative.
The present invention have it is small, laser stability is strong, simple in structure, feature easy to maintain can obtain different work( The white light laser of rate parameter, can be widely applied to the fields such as wireless laser communication, laser lighting, laser imaging, laser display.
Description of the drawings
Below in conjunction with the drawings and specific embodiments, the present invention is further illustrated:
Fig. 1 is a kind of structural schematic diagram for the white light laser closing beam technology based on semiconductor laser of the present invention.
Fig. 2 is fast axis collimation schematic diagram in a kind of white light laser closing beam technology based on semiconductor laser of the present invention.
Fig. 3 is that slow axis collimates schematic diagram in a kind of white light laser closing beam technology based on semiconductor laser of the present invention.
Fig. 4 is stepped heat sink in a kind of white light laser closing beam technology based on semiconductor laser of the present invention
The cross section structure schematic diagram in the directions A-A.
Fig. 5 be the present invention it is a kind of based on semiconductor laser close beam technology white light laser in three after respective speculum The three beams of laser hot spot schematic cross-section of wavelength.
In figure, 1- step types are heat sink, flight, the minimum flights of 4-, 201-450nm half among 2- highests flight, 3- Conductor Laser light source, 202-450nm fast axis collimation lens, 203-450nm slow axis collimation lens, 204-450nm speculums, 205- 450nm spectroscopes, 206-450nm detectors, 301-520nm semiconductor laser light resources, 302-520nm fast axis collimation lens, 303-520nm slow axis collimation lens, 304-520nm speculums, 305-520nm spectroscopes, 306-520nm detectors, 401- 650nm semiconductor laser light resources, 402-650nm fast axis collimation lens, 403-650nm slow axis collimation lens, 404-650nm reflections Mirror, 405-650nm spectroscopes, 406-650nm detectors, 5- achromatism condenser lenses.
Specific implementation mode
As shown in Figure 1, a kind of white light laser closing beam technology based on semiconductor laser, it is characterized in that:Including step type Heat sink 1,450nm semiconductor laser light resources 201,450nm fast axis collimation lens 202,450nm slow axis collimation lens 203,450nm Speculum 204,450nm spectroscopes 205,450nm detectors 206,520nm semiconductor laser light resources 301,520nm fast axis collimations Lens 302,520nm slow axis collimation lens 303,520nm speculums 304,520nm spectroscopes 305,520nm detectors 306, 650nm semiconductor laser light resources 401,650nm fast axis collimation lens 402,650nm slow axis collimation lens 403,650nm speculums 404,650nm spectroscopes 405,650nm detectors 406 and achromatism condenser lens 5.
The upper surface of the step type heat sink 1 is in three layers of step structure, respectively highest flight 2, intermediate flight 3 With minimum flight 4;450nm semiconductor laser light resources 201,450nm fast axles are installed on the highest flight 2 successively Collimation lens 202,450nm slow axis collimation lens 203,450nm spectroscopes 205,450nm detectors 206 and 450nm speculums 204;520nm semiconductor laser light resources 301,520nm fast axis collimation lens are installed on the intermediate flight 3 successively 302,520nm slow axis collimation lens 303,520nm spectroscopes 305,520nm detectors 306 and 520nm speculums 304;It is described most It is slow that 650nm semiconductor laser light resources 401,650nm fast axis collimation lens 402,650nm are installed on low flight 4 successively Axis collimation lens 403,650nm spectroscopes 405,650nm detectors 406 and 650nm speculums 404;
The 450nm semiconductor laser light resources 201,520nm semiconductor laser light resources 301,650nm semiconductor laser light resources 401 export 450nm, 520nm, 650nm laser respectively, and respectively blue, green, red tricolor laser passes through respective wave respectively first The long 450nm fast axis collimation lens 202,520nm fast axis collimation lens 302,650nm fast axis collimation lens 402, carry out fast axle Collimation;It is saturating using the respective 450nm slow axis collimation lens 203,520nm slow axis collimation lens 303,650nm slow axis collimation Mirror 403 carries out slow axis collimation;With 45 ° of incident angles respectively the 450nm speculums 204,520nm speculums 304,650nm Speculum 404, optical path direction change 90 °;By heat sink 1 Optimal Structure Designing of the step type, make wavelength be respectively 450nm, The three beams of laser of 520nm, 650nm are propagated in the same direction in same vertical direction;The achromatism condenser lens 5 is defeated in laser Outlet is mixed into white light laser for three kinds of wavelength lasers to be focused on same hot spot;The 450nm spectroscopes 205,520nm Spectroscope 305,650nm spectroscopes 405 are separately mounted to 450nm slow axis collimation lens 203,520nm slow axis described in respective wavelength Collimation lens 303,650nm slow axis collimation lens 403 and the 450nm speculums 204,520nm speculums 304,650nm reflect Between mirror 404, for changing the fraction of laser light direction of propagation once;Through the 450nm spectroscopes 205,520nm spectroscopes 305, 650nm spectroscopes 405 change nyctitropic sub-fraction laser and are respectively radiated to the respective 450nm detectors 206,520nm spies On survey device 306,650nm detectors 406, the 450nm detectors 206,520nm detectors 306,650nm detectors 406 can incite somebody to action Respective wavelength laser power is converted to electric signal, and laser driver is passed to by conducting wire, for adjusting each wavelength laser driving Electric current ensures the stability of each wavelength laser power stability and mixed proportion.
The 450nm semiconductor laser light resources 201,520nm semiconductor laser light resources 301 and 650nm semiconductor lasers Source 401 is unit semiconductor laser, and power is that 10mW~50mW is adjustable, can be connect with laser driver by conducting wire, by Laser driver provides electric current, and power is in a linear relationship with driving current, and electric current is bigger, and power is higher.Due to the 450nm half Conductor Laser light source 201,520nm semiconductor laser light resources 301 and 650nm semiconductor laser light resources 401 are elemental semiconductor Laser, the laser sent out are divided into fast axle and slow axis both direction, and wherein fast axis direction is vertical direction, and the angle of divergence is larger, about 30 °~70 °, slow-axis direction is horizontal direction, and the angle of divergence is smaller, about 8 °~10 °.Since the fast and slow axis angle of divergence is uneven, need It to be directed to three wavelength fast axles respectively and slow axis is collimated.
It is as shown in Figure 2 for three wavelength laser fast axis direction collimations.It is described since the fast axis direction angle of divergence is larger 450nm fast axis collimation lens 202,520nm fast axis collimation lens 302 and 650nm fast axis collimation lens 402 are that section is D-shaped Aspherical focal lens, for respective wavelength plate anti-reflection film, transmitance be more than 99%, can be by respective wavelength laser fast axle side It is compressed to a few milliradian orders of magnitude to the angle of divergence.
It is as shown in Figure 3 for three wavelength laser slow-axis direction collimations.The 450nm slow axis collimation lens 203,520nm Slow axis collimation lens 303 and 650nm slow axis collimation lens 403 are the spherical surface focusing cylindrical lens that section is D-shaped, for respective wave Long plating anti-reflection film, transmitance are more than 99%, can the respective wavelength laser fast axis direction angle of divergence be compressed to tens milliradian quantity Grade.
The 450nm speculums 204,520nm speculums 304 and 650nm speculums 404 are plane mirror, are used for Change respective wavelength laser optical path direction, three wavelength lasers is made to be propagated in the same direction in same perpendicular.For each Highly reflecting films are coated with from 45 ° of incidence angles of wavelength laser, reflectivity is more than 99%.
The step type heat sink 1 is oxygen-free copper material, as the pedestal of semiconductor laser light resource, is swashed for conductive semiconductor The heat that radiant generates.The step type heat sink 1 by step type design, make three semiconductor laser light resources and respectively The fast axis collimation lens, slow axis collimation lens, reflective mirror, spectroscope etc. are mounted on different ladders, generate 1mm or so height Difference makes the three beams of laser of three kinds of colors be transmitted in the same direction on same vertical plane after the respective speculum.Through reflection Three beams of laser after mirror reflection in vertical direction difference in height is respectively 1mm, as shown in Figure 5.By the achromatism condenser lens 5 Before, hot spot transmits in the same direction in the horizontal direction in perpendicular, 450nm laser faculas, 520nm laser faculas and 650nm laser faculas from top to bottom differ 1mm respectively.
The achromatism condenser lens 5, using achromat-design, for three kinds of wavelength lasers to be focused on same focus, Generate white light laser.It the rear end of achromatism condenser lens 5 can be with coupled into optical fibres or other devices.
The 450nm spectroscopes 205,520nm spectroscopes 305 and 650nm spectroscopes 405 are flat glass mirror, for Respective 45 ° of incidence angles of wavelength laser plate certain reflectivity film, transmitance 90%, reflectivity 10%.For changing sub-fraction Laser optical path direction, can 450nm detectors 206,520nm detectors 306,650nm detectors described in incident respectively wavelength 406。
The 450nm detectors 206,520nm detectors 306 and 650nm detectors 406 are used to respond respective wavelength and swash Light is simultaneously converted to electric signal, can be connect with laser driver by conducting wire.By the detection to each wavelength laser power, can lead to It crosses laser driver and adjusts each wavelength laser power in real time, ensure the stability of laser operation, and ensure that each wavelength laser passes The stability of defeated ratio.

Claims (7)

1. a kind of white light laser closing beam technology based on semiconductor laser, it is characterized in that:Including stepped heat sink (1), 450nm Semiconductor laser light resource (201), 450nm fast axis collimation lens (202), 450nm slow axis collimation lens (203), 450nm speculums (204), 450nm spectroscopes (205), 450nm detectors (206), 520nm semiconductor laser light resources (301), 520nm fast axles are accurate Straight lens (302), 520nm slow axis collimation lens (303), 520nm speculums (304), 520nm spectroscopes (305), 520nm are visited Survey device (306), 650nm semiconductor laser light resources (401), 650nm fast axis collimation lens (402), 650nm slow axis collimation lenses (403), 650nm speculums (404), 650nm spectroscopes (405), 650nm detectors (406) and achromatism condenser lens (5), The upper surface of the step type heat sink (1) is in three layers of step structure, respectively highest flight (2), intermediate flight (3) and Minimum flight (4);It is installed with 450nm semiconductor laser light resources (201), 450nm successively on the highest flight (2) Fast axis collimation lens (202), 450nm slow axis collimation lens (203), 450nm spectroscopes (205), 450nm detectors (206) and 450nm speculums (204);Be installed with successively on the intermediate flight (3) 520nm semiconductor laser light resources (301), 520nm fast axis collimation lens (302), 520nm slow axis collimation lens (303), 520nm spectroscopes (305), 520nm detectors (306) and 520nm speculums (304);It is installed with 650nm semiconductor laser light resources successively on the minimum flight (4) (401), 650nm fast axis collimation lens (402), 650nm slow axis collimation lens (403), 650nm spectroscopes (405), 650nm are visited Survey device (406) and 650nm speculums (404);
The 450nm semiconductor laser light resources (201) emit blue laser, are carried out by 450nm fast axis collimation lens (202) fast Axis collimates, and slow axis collimation is carried out using 450nm slow axis collimation lens (203), then anti-to 450nm with 45 ° of incident angles Mirror (204) is penetrated, optical path direction changes 90 °, is incident to achromatism condenser lens (5);The fixed peace of the 450nm spectroscopes (205) Between 450nm slow axis collimation lens (203) and 450nm speculums (204), laser that 450nm spectroscopes (205) reflect It is incident to 450nm detectors (206);The 450nm detectors (206) are connect by conducting wire with laser driver;
The 520nm semiconductor laser light resources (301) emit green laser, are carried out by 520nm fast axis collimation lens (302) fast Axis collimates, and slow axis collimation is carried out using 520nm slow axis collimation lens (303), then anti-to 520nm with 45 ° of incident angles Mirror (304) is penetrated, optical path direction changes 90 °, is incident to achromatism condenser lens (5);The fixed peace of the 520nm spectroscopes (305) Between 520nm slow axis collimation lens (303) and 520nm speculums (304), laser that 520nm spectroscopes (305) reflect It is incident to 520nm detectors (306);The 520nm detectors (306) are connect by conducting wire with laser driver;
650nm semiconductor laser light resources (401) transmitting red laser beam carries out fast by 650nm fast axis collimation lens (402) Axis collimates, and slow axis collimation is carried out using 650nm slow axis collimation lens (403), then anti-to 650nm with 45 ° of incident angles Mirror (404) is penetrated, optical path direction changes 90 °, is incident to achromatism condenser lens (5);The fixed peace of the 650nm spectroscopes (405) Between 650nm slow axis collimation lens (403) and 650nm speculums (404), laser that 650nm spectroscopes (405) reflect It is incident to 650nm detectors (406);The 650nm detectors (406) are connect by conducting wire with laser driver;
The achromatism condenser lens (5) is located at the side of stepped heat sink (1), and achromatism condenser lens (5) is by three kinds of wavelength Laser focuses on same hot spot, is mixed into white light laser, and export;The laser driver passes through conducting wire and 450nm half respectively Conductor Laser light source (201), 520nm semiconductor laser light resources (301) and 650nm semiconductor laser light resources (401) connection.
2. a kind of white light laser closing beam technology based on semiconductor laser according to claim 1, it is characterized in that:It is described Three kinds of wavelength lasers for being incident to achromatism condenser lens (5) are propagated in the same direction in same perpendicular.
3. a kind of white light laser closing beam technology based on semiconductor laser according to claim 1, it is characterized in that:It is described Difference in height between intermediate flight (3) and highest flight (2) is 1mm, intermediate flight (3) and minimum flight (4) it Between difference in height be 1mm.
4. a kind of white light laser closing beam technology based on semiconductor laser according to claim 1, it is characterized in that:It is described 450nm fast axis collimation lens (202), 520nm fast axis collimation lens (302) and 650nm fast axis collimation lens (402) are section For the aspherical focal lens of D-shaped.
5. a kind of white light laser closing beam technology based on semiconductor laser according to claim 1, it is characterized in that:It is described 450nm slow axis collimation lens (203), 520nm slow axis collimation lens (303) and 650nm slow axis collimation lens (403) are section For the spherical surface focusing cylindrical lens of D-shaped.
6. a kind of white light laser closing beam technology based on semiconductor laser according to claim 1, it is characterized in that:It is described 450nm speculums (204), 520nm speculums (304) and 650nm speculums (404) are plane mirror.
7. a kind of white light laser closing beam technology based on semiconductor laser according to claim 1, it is characterized in that:It is described 450nm spectroscopes (205), 520nm spectroscopes (305) and 650nm spectroscopes (405) are flat glass mirror.
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