CN105870307A - Low-light-decay ultraviolet LED and manufacturing method thereof - Google Patents
Low-light-decay ultraviolet LED and manufacturing method thereof Download PDFInfo
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- CN105870307A CN105870307A CN201610293879.2A CN201610293879A CN105870307A CN 105870307 A CN105870307 A CN 105870307A CN 201610293879 A CN201610293879 A CN 201610293879A CN 105870307 A CN105870307 A CN 105870307A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000003292 glue Substances 0.000 claims abstract description 118
- 239000003822 epoxy resin Substances 0.000 claims abstract description 18
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 229910000521 B alloy Inorganic materials 0.000 claims 2
- 238000005538 encapsulation Methods 0.000 claims 2
- 238000007711 solidification Methods 0.000 claims 2
- 230000008023 solidification Effects 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 abstract description 5
- 230000032798 delamination Effects 0.000 abstract description 4
- 230000035939 shock Effects 0.000 abstract description 4
- 238000002834 transmittance Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 7
- UEHLZRCCIWVHBH-UHFFFAOYSA-N 2-cyclopropyl-2-methylcyclopropane-1-carboxylic acid Chemical compound C1CC1C1(C)CC1C(O)=O UEHLZRCCIWVHBH-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
本发明公开了一种低光衰紫光LED及其制造方法，包括碗杯，所述碗杯的内底部通过固晶胶固定有一紫光芯片，所述紫光芯片通过一对键合金丝分别与正极导柱和负极导柱相连接，在所述碗杯中填充内胶，所述碗杯外封装有一外胶；所述内胶为有机硅改性环氧树脂，其中AB胶比例为A胶10重量份，B胶6重量份；所述外胶为环氧树脂，其中AB胶比例为A胶100重量份，B胶100重量份。本发明中外胶和内胶组成成分大体一致，如此内胶和外胶的结合时，使得气泡及分层这一难题得到彻底解决。同时内胶和外胶膨胀系数较为一致，内应力基本消除，经100次冷热冲击，LED仍能正常工作，由于内胶组份进行硅改性，紫外光透光性及其光衰性能大幅提高。
The invention discloses a low light attenuation purple light LED and a manufacturing method thereof. The column is connected to the negative pole guide column, and the inner glue is filled in the bowl cup, and an outer glue is packaged outside the bowl cup; the inner glue is silicone modified epoxy resin, and the proportion of AB glue is 10 weight of A glue part, 6 parts by weight of B glue; the outer glue is epoxy resin, wherein the proportion of AB glue is 100 parts by weight of A glue, and 100 parts by weight of B glue. In the present invention, the components of the outer glue and the inner glue are substantially the same, so that when the inner glue and the outer glue are combined, the problem of air bubbles and delamination is completely solved. At the same time, the expansion coefficients of the inner rubber and the outer rubber are relatively consistent, and the internal stress is basically eliminated. After 100 thermal shocks, the LED can still work normally. Because the inner rubber components are modified by silicon, the ultraviolet light transmittance and light attenuation performance are greatly improved. improve.
Description
技术领域technical field
本发明涉及LED生产技术领域，更具体地说是一种低光衰紫光LED及其制造方法。The invention relates to the technical field of LED production, in particular to a low light attenuation violet LED and a manufacturing method thereof.
背景技术Background technique
现有技术中，紫光LED的UVA波段(365～415nm)进行直插式封装时，采用以下两种方法：(1)第一种，采用环氧树脂直接封装，封装后灯杯被环氧树脂填充，其不足之处是紫外光会破坏环氧树脂，造成紫外光透过性差，使用一段时间后，紫外光功率下降很多，最终影响使用。In the prior art, when the UVA band (365-415nm) of the purple LED is in-line packaged, the following two methods are adopted: (1) The first method is directly packaged with epoxy resin, and the lamp cup is covered with epoxy resin after packaging. The disadvantage of filling is that the ultraviolet light will destroy the epoxy resin, resulting in poor ultraviolet light transmission. After a period of use, the ultraviolet light power will drop a lot, which will eventually affect the use.
(2)第二种，采用灯杯内点硅胶，外封环氧树脂，紫外光功率有明显改善，但因为两种胶组份及其膨胀系数差异大，封装后极易产生气泡，并且内外胶分层及内应力大，造成可见光的一致性差，同时品质可靠性也下降，在进行波峰焊接加工作业时，死灯率较高。(2) The second type uses silica gel inside the lamp cup and epoxy resin on the outside. The UV light power is significantly improved. Glue delamination and internal stress lead to poor consistency of visible light, and the quality and reliability are also reduced. During the wave soldering process, the dead light rate is high.
发明内容Contents of the invention
本发明的目的在于克服现有技术以上缺陷，提供一种既能提高紫外光透光性又能提高光衰稳定性的低光衰紫光LED及其制造方法。The object of the present invention is to overcome the above defects of the prior art, and provide a low-light-fading purple LED and a manufacturing method thereof that can improve both the transmittance of ultraviolet light and the stability of light decay.
为了达到以上目的，本发明是通过以下技术方案实现的：一种低光衰紫光LED，包括一上口大下底小的碗杯，以及一对正负电极导柱，所述正负电极导柱进一步包括正极导柱和负极导柱，所述负极导柱与所述碗杯直接相连，而所述正极导柱与所述碗杯间隔分离，其特征在于，所述碗杯的内底部通过固晶胶固定有一紫光芯片，所述固晶胶的高度为所述紫光芯片高度的1/3～1/2，所述紫光芯片通过一对键合金丝分别与所述正极导柱和负极导柱相连接，固定好所述紫光芯片后，在所述碗杯中填充内胶，所述内胶充满整个碗杯，所述碗杯外封装有一固化后呈子弹头形的外胶，其中所述正极导柱和负极导柱伸出所述外胶外；In order to achieve the above purpose, the present invention is achieved through the following technical solutions: a low-light decay purple LED, including a bowl with a large upper mouth and a small lower bottom, and a pair of positive and negative electrode guide posts. The column further includes a positive pole guide post and a negative pole guide post, the negative pole guide post is directly connected to the bowl, and the positive pole guide post is spaced apart from the bowl cup, and it is characterized in that the inner bottom of the bowl cup passes through A crystal-bonding adhesive fixes a purple light chip, the height of the crystal-bonding glue is 1/3 to 1/2 of the height of the purple light chip, and the purple light chip is respectively connected to the positive pole guide column and the negative pole conductor through a pair of bonding gold wires. After the purple light chip is fixed, the inner glue is filled in the bowl, the inner glue fills the whole bowl, and the outer glue of the bowl is packaged with a bullet-shaped outer glue after curing. The positive pole guide post and the negative pole guide post protrude from the outside of the outer rubber;
所述固晶胶为硅胶[化学分子式为mSiO2·nH2O]；The crystal-bonding glue is silica gel [chemical molecular formula is mSiO2 nH2O];
所述内胶为有机硅改性环氧树脂[化学分子式为(C8H12O2)n(C8H12O2)n(C8H12O2)nC6H14O3+Si-O]，其中AB胶比例为A胶10重量份，B胶6重量份；The inner glue is silicone modified epoxy resin [chemical molecular formula is (C8H12O2)n(C8H12O2)n(C8H12O2)nC6H14O3+Si-O], wherein the proportion of AB glue is 10 parts by weight of A glue, and 6 parts by weight of B glue ;
所述外胶为环氧树脂[化学分子式为(C8H12O2)n(C8H12O2)n(C8H12O2)nC6H14O3]，其中AB胶比例为A胶100重量份，B胶100重量份。The outer glue is epoxy resin [chemical molecular formula is (C8H12O2)n(C8H12O2)n(C8H12O2)nC6H14O3], wherein the proportion of AB glue is 100 parts by weight of A glue, and 100 parts by weight of B glue.
作为优选，所述紫光芯片的UVA波段范围在365～415nm。Preferably, the UVA band of the violet light chip is in the range of 365-415nm.
一种低光衰紫光LED的制造方法，其特征在于，步骤如下：A method for manufacturing a low light attenuation violet LED, characterized in that the steps are as follows:
(1)将紫光芯片放入碗杯的内底部，然后将固晶胶置于固晶机上进行固晶作业，固定住紫光芯片，固晶胶的高度为紫光芯片高度的1/3～1/2；(1) Put the Ziguang chip into the inner bottom of the bowl, and then put the crystal-bonding glue on the crystal-bonding machine for the crystal-bonding operation to fix the Ziguang chip. The height of the crystal-bonding glue is 1/3~1/ of the height of the Ziguang chip. 2;
(2)将固定好紫光芯片的碗杯放入烤箱中进行烘烤，烘烤分为两个阶段，第一阶段烘烤温度为100℃，时间为60分钟，使固晶胶中的反应抑制剂挥发，第二阶段烘烤温度为150℃，时间为120分钟，使固晶胶固化；(2) Put the bowl with the Ziguang chip fixed into the oven for baking. The baking is divided into two stages. The first stage is baked at 100°C for 60 minutes to inhibit the reaction in the die-bonding glue. The agent is volatilized, and the second-stage baking temperature is 150°C, and the time is 120 minutes, so that the die-bonding glue is cured;
(3)将碗杯内的紫光芯片通过一对键合金丝分别与正极导柱和负极导柱相连接，其中紫光芯片、键合金丝、正极导柱以及负极导柱与碗杯牵连于一起，以下内容中再出现时简称为碗杯及其附属件；(3) Connect the purple light chip in the bowl to the positive guide post and the negative guide post respectively through a pair of bonding gold wires, wherein the purple light chip, the bonding gold wire, the positive guide post and the negative guide post are involved in the bowl together When the following content reappears, it is referred to as bowl cup and its accessories;
(4)将有机硅改性环氧树脂按照A胶10重量份和B胶6重量份比例混合好倒入容器中，搅拌30分钟，使其混合均匀，制成内胶；(4) Mix the silicone modified epoxy resin according to the ratio of 10 parts by weight of glue A and 6 parts by weight of glue B and pour it into the container, stir for 30 minutes, make it mix evenly, and make the inner glue;
(5)将调配好的内胶置于点胶机上进行点胶作业，点胶温度为30℃，内胶点满整个碗杯；(5) Place the prepared inner glue on the glue dispenser for dispensing operation, the dispensing temperature is 30°C, and the inner glue is dotted over the entire bowl;
(6)将点胶后的碗杯及其附属件一同放入烤箱进行烘烤，烘烤温度为150℃，时间为60分钟；(6) Put the bowl cup and its accessories after dispensing into the oven for baking, the baking temperature is 150°C, and the baking time is 60 minutes;
(6)将环氧树脂按照A胶100重量份和B胶100重量份比例混合好倒入容器中，搅拌30分钟，使其混合均匀，制成外胶；(6) Mix the epoxy resin according to the ratio of 100 parts by weight of glue A and 100 parts by weight of glue B and pour it into the container, stir for 30 minutes, make it mix evenly, and make the outer glue;
(7)将内胶固化后的碗杯及其附属件置于封胶机上进行封装作业，封装时碗杯需粘外胶，粘外胶温度为80℃，且每小时换外胶一次；(7) Put the bowl cup and its accessories after the inner glue has cured on the sealing machine for packaging operation. When sealing, the bowl cup needs to be glued to the outer glue.
(8)将封装后的碗杯放入烤箱进行烘烤，烘烤分为三个阶段，第一阶段烘烤温度为90℃，时间为20分钟，第二阶段烘烤温度为110℃，时间为20分钟，第三阶段烘烤温度为130℃，时间为40分钟；使内胶与外胶更好地融合，固化后形成产品。(8) Put the packaged cup into the oven for baking. The baking is divided into three stages. The baking temperature of the first stage is 90°C for 20 minutes, and the baking temperature of the second stage is 110°C for 20 minutes. 20 minutes, the third stage of baking temperature is 130 ℃, the time is 40 minutes; make the inner glue and outer glue better blend, and form a product after curing.
有益效果：本发明中的外胶和内胶组成成分大体一致，如此内胶和外胶的结合时，使得气泡及分层这一困扰业界十几年的难题得到彻底解决。同时内胶和外胶膨胀系数较为一致，内应力基本消除，经100次冷热冲击，LED仍能正常工作(高温100℃，低温-40℃)，由于内胶组份进行硅改性，紫外光透光性及其光衰性能大幅提高。Beneficial effects: the composition of the outer glue and the inner glue in the present invention are roughly the same, so that when the inner glue and the outer glue are combined, the problem of air bubbles and delamination that has plagued the industry for more than ten years is completely solved. At the same time, the expansion coefficients of the inner rubber and the outer rubber are relatively consistent, and the internal stress is basically eliminated. After 100 thermal shocks, the LED can still work normally (high temperature 100°C, low temperature -40°C). The light transmittance and light attenuation performance are greatly improved.
附图说明Description of drawings
图1为本发明的结构示意图；Fig. 1 is a structural representation of the present invention;
图2为本发明冷热冲击曲线图；Fig. 2 is a thermal shock curve diagram of the present invention;
图3为本发明光衰曲线图。Fig. 3 is a light attenuation curve diagram of the present invention.
图中：1-碗杯，2-负极导柱，3-正极导柱，4-固晶胶，5-紫光芯片，6-内胶，7-外胶，8-键合金丝。In the picture: 1-bowl, 2-negative pole guide post, 3-positive pole guide post, 4-crystal-bonding glue, 5-purple chip, 6-inner glue, 7-outer glue, 8-bonding gold wire.
具体实施方式detailed description
为了使本发明的技术手段、创作特征与达成目的易于明白理解，以下结合具体实施例进一步阐述本发明。In order to make the technical means, creative features and objectives of the present invention easy to understand, the present invention is further described below in conjunction with specific embodiments.
实施例：如图1所示，一种低光衰紫光LED，包括一上口大下底小的碗杯1，以及一对正负电极导柱，正负电极导柱进一步包括正极导柱3和负极导柱2，负极导柱2与碗杯1直接相连，而正极导柱3与碗杯1间隔分离，碗杯1的内底部通过固晶胶4固定有一紫光芯片5，紫光芯片5的UVA波段范围选用在365～415nm。固晶胶4的高度为紫光芯片5高度的1/3～1/2。紫光芯片5通过一对键合金丝8分别与正极导柱3和负极导柱2相连接，固定好紫光芯片5后，在碗杯1中填充内胶6，内胶6充满整个碗杯1，碗杯1外封装有一固化后呈子弹头形的外胶7，其中正极导柱3和负极导柱2伸出外胶7外。Embodiment: As shown in Figure 1, a low-light decay purple light LED includes a bowl cup 1 with a large upper mouth and a small lower bottom, and a pair of positive and negative electrode guide posts. The positive and negative electrode guide posts further include a positive electrode guide post 3 And the negative pole guide post 2, the negative pole guide post 2 is directly connected with the bowl cup 1, and the positive pole guide post 3 is spaced apart from the bowl cup 1, and the inner bottom of the bowl cup 1 is fixed with a violet light chip 5 by crystal-bonding glue 4, and the purple light chip 5 The range of UVA band is selected from 365 to 415nm. The height of the die-bonding glue 4 is 1/3-1/2 of the height of the purple chip 5 . The purple light chip 5 is respectively connected to the positive pole guide post 3 and the negative pole guide post 2 through a pair of bonded gold wires 8. After the purple light chip 5 is fixed, the inner glue 6 is filled in the bowl cup 1, and the inner glue 6 fills the whole bowl cup 1. The bowl cup 1 is packaged with an outer glue 7 which is bullet-shaped after curing, wherein the positive pole guide post 3 and the negative pole guide post 2 protrude from the outer glue 7 .
固晶胶4为硅胶。The crystal-bonding glue 4 is silica gel.
内胶6为有机硅改性环氧树脂，其中AB胶比例为A胶10重量份，B胶6重量份。The inner glue 6 is a silicone modified epoxy resin, wherein the proportion of the AB glue is 10 parts by weight of the A glue, and 6 parts by weight of the B glue.
外胶7为环氧树脂，其中AB胶比例为A胶100重量份，B胶100重量份。The outer glue 7 is epoxy resin, wherein the proportion of AB glue is 100 parts by weight of A glue, and 100 parts by weight of B glue.
一种低光衰紫光LED的制造方法，步骤如下：A method for manufacturing a low light attenuation violet LED, the steps are as follows:
(1)将紫光芯片放入碗杯的内底部，然后将固晶胶置于固晶机上进行固晶作业，固定住紫光芯片，固晶胶的高度为紫光芯片高度的1/3～1/2；(1) Put the Ziguang chip into the inner bottom of the bowl, and then put the crystal-bonding glue on the crystal-bonding machine for the crystal-bonding operation to fix the Ziguang chip. The height of the crystal-bonding glue is 1/3~1/ of the height of the Ziguang chip. 2;
(2)将固定好紫光芯片的碗杯放入烤箱中进行烘烤，烘烤分为两个阶段，第一阶段烘烤温度为100℃，时间为60分钟，使固晶胶中的反应抑制剂挥发，第二阶段烘烤温度为150℃，时间为120分钟，使固晶胶固化；(2) Put the bowl with the Ziguang chip fixed into the oven for baking. The baking is divided into two stages. The first stage is baked at 100°C for 60 minutes to inhibit the reaction in the die-bonding glue. The agent is volatilized, and the second-stage baking temperature is 150°C, and the time is 120 minutes, so that the die-bonding glue is cured;
(3)将碗杯内的紫光芯片通过一对键合金丝分别与正极导柱和负极导柱相连接，其中紫光芯片、键合金丝、正极导柱以及负极导柱与碗杯牵连于一起，以下内容中再出现时简称为碗杯及其附属件；(3) Connect the purple light chip in the bowl to the positive guide post and the negative guide post respectively through a pair of bonding gold wires, wherein the purple light chip, the bonding gold wire, the positive guide post and the negative guide post are involved in the bowl together When the following content reappears, it is referred to as bowl cup and its accessories;
(4)将有机硅改性环氧树脂按照A胶10重量份和B胶6重量份比例混合好倒入容器中，搅拌30分钟，使其混合均匀，制成内胶；(4) Mix the silicone modified epoxy resin according to the ratio of 10 parts by weight of glue A and 6 parts by weight of glue B and pour it into the container, stir for 30 minutes, make it mix evenly, and make the inner glue;
(5)将调配好的内胶置于点胶机上进行点胶作业，点胶温度为30℃，内胶点满整个碗杯；(5) Place the prepared inner glue on the glue dispenser for dispensing operation, the dispensing temperature is 30°C, and the inner glue is dotted over the entire bowl;
(6)将点胶后的碗杯及其附属件一同放入烤箱进行烘烤，烘烤温度为150℃，时间为60分钟；(6) Put the bowl cup and its accessories after dispensing into the oven for baking, the baking temperature is 150°C, and the baking time is 60 minutes;
(6)将环氧树脂按照A胶100重量份和B胶100重量份比例混合好倒入容器中，搅拌30分钟，使其混合均匀，制成外胶；(6) Mix the epoxy resin according to the ratio of 100 parts by weight of glue A and 100 parts by weight of glue B and pour it into the container, stir for 30 minutes, make it mix evenly, and make the outer glue;
(7)将内胶固化后的碗杯及其附属件置于封胶机上进行封装作业，封装时碗杯需粘外胶，粘外胶温度为80℃，且每小时换外胶一次；(7) Put the bowl cup and its accessories after the inner glue has cured on the sealing machine for packaging operation. When sealing, the bowl cup needs to be glued to the outer glue.
(8)将封装后的碗杯放入烤箱进行烘烤，烘烤分为三个阶段，第一阶段烘烤温度为90℃，时间为20分钟，第二阶段烘烤温度为110℃，时间为20分钟，第三阶段烘烤温度为130℃，时间为40分钟；使内胶与外胶更好地融合，固化后形成产品。(8) Put the packaged cup into the oven for baking. The baking is divided into three stages. The baking temperature of the first stage is 90°C for 20 minutes, and the baking temperature of the second stage is 110°C for 20 minutes. 20 minutes, the third stage of baking temperature is 130 ℃, the time is 40 minutes; make the inner glue and outer glue better blend, and form a product after curing.
使用：本发明中的外胶和内胶组成成分大体一致，如此内胶和外胶的结合时，使得气泡及分层这一困扰业界十几年的难题得到彻底解决。同时内胶和外胶膨胀系数较为一致，内应力基本消除，经100次冷热冲击，LED仍能正常工作(如图2所示)，由于内胶组份进行硅改性，紫外光透光性及其光衰性能大幅提高(如图3所示)。Use: The composition of the outer glue and the inner glue in the present invention are roughly the same, so that when the inner glue and the outer glue are combined, the problem of air bubbles and delamination that has plagued the industry for more than ten years is completely solved. At the same time, the expansion coefficients of the inner rubber and the outer rubber are relatively consistent, and the internal stress is basically eliminated. After 100 thermal shocks, the LED can still work normally (as shown in Figure 2). Since the inner rubber components are modified by silicon, the ultraviolet light is transparent. Sex and its light attenuation performance are greatly improved (as shown in Figure 3).
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