CN105856444A - 基板及其加工方法与装置 - Google Patents
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Abstract
本发明提供一种基板及其加工方法与装置。该加工方法包括下列步骤:提供一基板本体,该基板本体具有一表面;放置一夹具于该表面上,其中该夹具作为一催化剂;将该基板本体及该夹具置于一反应性液体中;以及经由该反应性液体及该催化剂对该表面进行一化学反应,以加工该基板本体。
Description
【技术领域】
本发明关于一种基板加工方法,尤指一种利用化学反应的基板的加工方法。
【先前技术】
长久以来,由晶棒切割得到晶圆的方式,均采用以钻石线切割的方式进行。实际上,由于此种线切割方式属于机械加工,虽然实务上生产线均以接近全自动化的设备生产,但是仍无可避免地产生相当大的晶圆材料损耗,同时也需要花费相当大的水电与耗材(例如钻石切割液及金属切割线等),因此晶圆的切割制程已成为晶圆加工制程中追求降低成本的关键流程之一。
此外,对于在基板表面制造白光氮化镓发光二极管(LED)的制程,因为蓝宝石基板的加工不易,因此以硅基板取代蓝宝石基板的相关技术开发,便逐渐受到重视,同时也是台湾利用既有的硅产业技术与产业链,藉由技术杠杆来切入LED产业发展的机会。为了改善氮化镓LED材料与硅基板间的晶格常数差异、以及热膨胀系数差异等材料特性,在硅基板表面进行加工、甚至图案化已成为可能的解决方法,其中图案化的实现是使用黄光制程及光罩,将所需要的图案形成于基板表面。然而,利用黄光制程来制作图案的成本相当高,致使LED产品的成本无法有效下降。
因此,申请人有鉴于现有技术的缺陷,发明出本案「基板及其加工方法与装置」,以改善上述缺陷。
【发明内容】
本发明的一方面提供一种基板加工方法,包括下列步骤:提供一基板本体,该基板本体具有一表面;放置一夹具(jig,又称治具)于该表面上,其中该夹具作为一催化剂;将该基板本体及该夹具置于一反应性液体中;以及经由该反应性液体及该催化剂对该表面进行一化学反应,以加工该基板本体。
本发明的另一方面提供一种晶棒切割装置,包含:一装置本体,于其内容设一晶棒,其中该晶棒具至少二相邻切割周围(periphery),且该至少二相邻切割周围界定一晶圆;以及一催化切削组件,形成于该装置本体上,并催化该至少二相邻切割周围而对该晶棒进行切割以获得该晶圆。
本发明的又一方面提供一种于非导体基板上形成一图案的方法,包括下列步骤:提供一基板本体,该基板本体具有一表面;以及经由一催化反应,于该表面上形成该图案。
【图式简单说明】
图1A~1C:本发明第一实施例的晶棒加工装置及加工方法示意图。
图1D:本发明第一实施例的晶棒立体示意图。
图2:本发明第二实施例的晶圆加工装置及加工方法示意图。
图3A~3B:本发明第三实施例的晶圆加工装置及加工方法示意图。
图4:本发明第四实施例的晶圆加工装置及加工方法示意图。
图5A:本发明第五实施例夹具照片。
图5B:本发明第五实施例的加工后晶圆表面所形成图案照片。
图6A~6C:本发明第六实施例的反应性液体的循环伏安示意图。
【实施方式】
本发明的实施例的详细描述为如下所述,然而,除了该详细描述之外,本发明还可以广泛地以其他的实施例来施行。亦即,本发明的范围并不受已提出的实施例所限制,而应以本发明提出的申请专利范围为准。
本发明旨在利用一种化学反应,更可利用一种催化反应,来切割晶棒(ingot)而得到晶圆(或称为基板)、或是于基板表面上形成图案等,其中该基板的材质可为硅或氮化镓。本发明更可以同时藉由电化学反应来加速加工速率、改善基板表面的粗糙度、以及减少材料损耗。
首先,请参阅第1A~1C图,其为本发明第一实施例的晶棒10的加工装置18及加工方法的示意图。该加工装置18为一晶棒切割装置,其中使用至少一条切割线11作为一夹具。第1A图所示的加工方法使用两条切割线11,将该切割线11置于该晶棒10的待切割处,其中该切割线11同时作为一催化剂。接着,将一反应性液体12加入该加工装置18,其中该反应性液体12包括一蚀刻液,而该晶棒10及该反应性液体12在该切割线11的催化下,会于该晶棒10及该切割线11之间的一接触面14发生化学反应,以蚀刻该晶棒10。随着时间的流逝,该接触面14会沿着重力方向15移动,最后将该晶棒10切开。假如该切割线11的数量为两条以上,便可得到一片以上的晶圆13。为了确保该晶棒10被顺利切割,对于该切割线11更可增加一重量负荷(图中未显示),使该切割线11与该晶棒10能维持良好接触。
当然,本发明的另一实施例可参考前述实施例,惟与前述实施例不同处在于,将该晶棒10置于该切割线上方,与该蚀刻液一同置于该加工装置18内,必要时亦可对该晶棒10增加一重量负荷,使该晶棒10与该切割线11能维持良好接触。
请参阅第1D图,其为本发明第一实施例的晶棒10的示意图。对于将该晶棒10切割成该晶圆13,也可作如下描述。该晶棒10的待切割处视为至少二相邻的切割周围(periphery)16,该至少二相邻切割周围16界定切割后所形成的该晶圆13,并使用该切割线11作为一催化切削组件,用于催化该至少二相邻切割周围16而对该晶棒10进行切割,以获得该晶圆13。
请再参阅第1A~1C图,本发明的晶棒10的切割方法包含下列步骤:(1)清洗该晶棒10的表面;(2)将氢氟酸(作为蚀刻液)与过氧化氢(作为氧化剂)以适当比例进行混合,以形成该反应性液体12,必要时可以再加入添加剂、蚀刻促进剂(例如甘胺酸(Glycine)、赖胺酸(Lysine)、硫酸铜、硝酸铜、氯化铜等)或其他氧化剂(例如臭氧);(3)调整与维持该反应性液体12于弱酸环境;(4)以直径为约0.5mm的该金属线11(本发明采用银金属线,也可选用铂线、铜线、铱线、钯线、金线、不锈钢线或其组合;或该金属线11的表面的材质为银、铂、铜、铱、钯、金或其组合)作为催化剂;(5)在该反应性液体12中将该金属线11与该晶棒10的表面接触以进行蚀刻,同时测量该晶棒10上的蚀刻深度以计算蚀刻速率,并测量切割面的粗糙度,以取得较佳的切割条件及切割质量。
在前述例子中,如果该切割线11的材料选自银或是其他可以作为催化剂的金属材料,该反应性液体12为过氧化氢及氢氟酸的混合物,而该晶棒12为硅晶棒,所发生的化学反应表示如下:
(一)银的催化反应机构:
(二)氢氟酸的蚀刻反应机制:
(三)总反应式:
请参阅第2图,其为本发明第二实施例的晶圆20的加工装置28及加工方法示意图。该加工装置28为于该晶圆20表面上形成图案的装置,若是想要于晶圆20上加工以形成一线形凹槽26,可利用一切割线21以及该反应性液体12,并采用上述同样的方式,待该晶圆20被蚀刻达到一预定深度D2时,将该晶圆20取出,即可于该晶圆20上形成该线形凹槽26。若是想要于该晶圆20上形成一格状图案,则使用对应于该格状图案的一网状夹具来取代该切割线21,即可于该晶圆20上形成该格状图案。
请参阅第3A图,其为本发明第三实施例的晶圆30的加工装置38及加工方法示意图。该加工装置38为于该晶圆30表面上形成图案的装置,若是想要于晶圆30上加工以形成一立体形状图案,例如一圆柱状图案(图中未显示),可利用具有对应于该立体形状图案的一中空夹具31以及该反应性液体12,采用上述同样的方式,待该晶圆30被蚀刻达到一预定深度D3时,将该晶圆30取出,即可于该晶圆30上形成该立体形状图案。同样地,使用于表面具有对应于一粗糙面图案的另一夹具来取代该中空夹具31,即可于该晶圆30上形成该粗糙面图案。
此外,如第3B图所示,更可于该中空夹具31旁设置一对应电极33,以该中空夹具31作为阴极,而该对应电极33作为阳极,并设置一电源供应器34,其中该电源供应器34经由一线路35与该中空夹具31及该对应电极33电连接,并施加一固定电压或一固定电流,利用阴极防蚀(cathode protection)的原理,可达到减少该中空夹具31的损耗以及保护该金属线11的目的。再者,亦可以该中空夹具31作为阳极,而该对应电极33作为阴极,并施加另一固定电压或另一固定电流,以达到加速蚀刻的功效。本发明的实施更可藉由一物体36经由该中空夹具31对该晶圆30的表面施加一压力,以确保蚀刻过程中该中空夹具31与该晶圆30保持良好接触,以确保蚀刻质量。
当然,本发明的另一实施例可参考前述实施例,惟与前述实施例不同处在于,将该晶圆30置于该中空夹具31上方,与该反应性液体12一同置于该加工装置38内,必要时也亦可对该晶圆30增加一重量负荷,使该晶圆30与该中空夹具31能维持良好接触。
该反应性液体12的配制比例及结果说明如表1所示。由表1可知,本发明于选用适当的氧化剂与蚀刻条件下,硅晶棒可以被顺利切割,而且当过氧化氢的浓度愈高,银线的溶解速率(dissolution rate)愈低,故银的损耗量也愈低。
表1
本发明的方法为将晶棒切割成晶圆,由于并非采用机械加工的方法,晶棒的损耗量仅约10%,甚至远低于此数值。若采用现有技术将晶棒切割成晶圆,则依据所使用切割线的线宽与其上的钻石或研磨颗粒的大小,有所不同,但晶棒的损耗量都超过50%以上,特别是当晶圆厚度越来越薄时,由于机械切割时产生切割应力,容易使晶圆破裂,因此造成更多切割不良的损失。因此,使用本发明所提出的方法可大幅提升晶圆的产出率。
请参阅第4图,其为本发明第四实施例的晶圆40的加工装置48及加工方法示意图。本实施例采用一金字塔形夹具41,该金字塔形夹具41于一反应性液体12中,藉由该夹具41上方的一物体46对该晶圆40的表面施加一压力,以进行蚀刻,使该晶圆40表面形成一倒金字塔形状图案。
请参阅第5A图,其系本发明第五实施例的夹具的照片,该照片系以扫描式电子显微镜(scanning electron microscope,SEM)所拍摄。该夹具系由复数个如第四实施例所示的金字塔形夹具排列成金字塔数组,使用该夹具,可以于硅晶圆的表面形成对应的倒金字塔数组图案,如第5B图所示使用SEM所拍摄的照片。
根据本发明的第六实施例,也可选用硫酸来作为蚀刻液,以取代前述的氢氟酸。在此实施例中,分别采用浓度为0.5M、1M及2M的硫酸,以该银线为工作电极,而石墨棒为对应电极,经由电化学循环伏安法(Cyclic Voltammetry,CV)测试,得到循环发生还原及氧化反应时电流对电位(相对于对应电极)的曲线,如第6A~6C图所示。根据氧化与还原曲线的峰高对称性来判断该化学反应的可逆性,有助于了解所采用的该反应性液体的电化学特性,从而可据以设计或改善该反应性液体的配方、以及加速或抑制加工的进行。
此外,由于本发明不需要使用黄光制程及光罩,故可大幅降低生产设备的投资成本。且根据本发明的方法,可以简单地于基板上或晶圆上形成一维、二维或三维的图案。
本发明以较佳的实施例说明如上,仅用于帮助了解本发明的实施,非用以限定本发明的精神,而本领域技术人员于领悟本发明的精神后,在不脱离本发明的精神范围内,当可作些许更动修饰及等同的变化替换,其专利保护范围当视后附的申请专利范围及其等同领域而定。
【符号说明】
10 晶棒
11 切割线
12 反应性液体
13、20、30、40 晶圆
14 接触面
15 重力方向
16 至少二相邻切割周围
18、28、38、48 加工装置
21 切割线
26 线形凹槽
31 中空夹具
33 对应电极
34 电源供应器
35 线路
36、46 物体
41 金字塔形夹具
D2、D3 预定深度
Claims (10)
1.一种基板加工方法,包括下列步骤:
提供一基板本体,该基板本体具有一表面;
放置一夹具于该表面上,其中该夹具作为一催化剂;
将该基板本体及该夹具置于一反应性液体中;以及
经由该反应性液体及该催化剂对该表面进行一化学反应,以加工该基板本体。
2.如权利要求1所述的方法,更包括下列步骤:
于该反应性液体中设置一对应电极(counter electrode)对置于该夹具;以及
提供一电源至该夹具及该对应电极,以对该夹具及该对应电极施加一固定电压或一固定电流。
3.如权利要求2所述的方法,更包含下列步骤其中之一:
当该夹具为一阳极时,对该夹具施加该固定电压或该固定电流以加速该化学反应;以及
当该夹具为一阴极时,对该夹具施加该固定电压或该固定电流以对于该夹具进行防蚀。
4.如权利要求1所述的方法,其中:
该反应性液体包括一蚀刻液,该蚀刻液为氢氟酸、硫酸、盐酸、硝酸或其任意组合;以及
该反应性液体更包括一氧化剂及一蚀刻促进剂,其中该氧化剂为过氧化氢或臭氧,该蚀刻促进剂系选自甘胺酸(Glycine)、赖胺酸(Lys ine)、硫酸铜、硝酸铜、氯化铜或其组合。
5.如权利要求1所述的方法,其中:
该夹具为线状、面状或立体状;
该夹具的表面材质为一金属,该金属为银、铂、铜、铱、钯、金、不锈钢或其组合;
该基板本体的材质为硅、或氮化镓;以及
该方法更包含对该夹具、该晶棒或其组合施加一压力,以使该夹具保持接触该基板本体。
6.如权利要求1所述的方法,其中加工该基板本体系包含下列步骤其中之一:
于该基板本体的表面形成一图案;以及
对该基板本体进行切割。
7.一种晶棒切割装置,包含:
一装置本体,于其内容设一晶棒,其中该晶棒具至少二相邻切割周围(periphery),且该至少二相邻切割周围界定一晶圆;以及
一催化切削组件,形成于该装置本体上,并催化该至少二相邻切割周围而对该晶棒进行切割以获得该晶圆。
8.如权利要求7所述的装置,其中:
该催化切削组件包括一金属线,该金属线为一催化剂,该催化剂系选自银、铂、铜、铱、钯、金、不锈钢或其组合;以及
该装置更包括:
一压力源,对该夹具、该晶棒或其组合施加一压力;以及
一蚀刻液,藉由该金属线的催化来切割该晶棒。
9.一种于非导体基板上形成一图案的方法,包括下列步骤:
提供一基板本体,该基板本体具有一表面;以及
经由一催化反应,于该表面上形成该图案。
10.如权利要求9所述的方法,其中:
该催化反应利用一金属夹具接触该表面,以形成一接触面;以及
经由该基板本体为一反应物、该液体为一蚀刻液以及该金属夹具为一催化剂,使得该接触面承受该重力而持续向下移动时进行该催化反应,使该表面形成具有与该接触面的投影面相同形状的该图案。
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