CN105826478B - Light emitting element - Google Patents

Abstract

This case discloses a light-emitting element, including a substrate, a first metal layer and a second metal layer formed sequentially on the substrate, and an organic material layer formed between the first metal layer and the second metal layer. Wherein, the thickness of the first metal layer can be uniform or include a plurality of metal parts or further include openings that expose part of the substrate surface. The organic material layer includes hole transport materials and electron transport materials that are in contact with each other to interact to generate peak wavelengths that can be emitted. The exciplex is located in the first range of light, and plasma coupling occurs between the first and second metal layers separated by the organic material layer. By adjusting the thickness of the first metal layer or the first metal layer and the second metal layer, plasma coupling occurs. The distance between the two metal layers is such that the peak wavelength of the light is shifted to the second range and/or the third range.

Description

Light emitting element

technical field

This case relates to a light-emitting element, especially an organic light-emitting element.

Background technique

Generally, light-emitting diodes (Light-Emitting Diode; LED) use semiconductor materials, make these materials into p-type and n-type by doping, etc., and then join them together to form a p-n junction, then electrons and holes can be separated from n Type and p-type materials are injected, and when electrons and holes meet and combine, energy is released in the form of photons.

Organic Light-Emitting Diode (OLED) uses organic materials. The light-emitting process of organic light-emitting diodes is roughly as follows: a forward bias voltage is applied, and electrons and holes are respectively injected from the cathode and the anode after overcoming the interface energy barrier. Finally, the electrons and holes combine in the light-emitting layer, and the excitons disappear and emit light energy. In addition, doping the guest fluorescent/phosphorescent light-emitting material in the light-emitting layer can improve the light-emitting efficiency and service life of the OLED.

In recent years, the luminous efficiency and service life of red, green or blue light-emitting materials of OLEDs have improved significantly, especially green light-emitting materials, but blue light-emitting materials are relatively backward. Although the efficiency of blue phosphorescent materials has been achieved To 20.4cd/A, but its life is only a few hundred hours.

Therefore, how to overcome the aforementioned problems, such as how to develop high-efficiency OLED devices without using blue fluorescent/phosphorescent guest light-emitting materials, is a key issue in the current market.

Contents of the invention

This case proposes a light-emitting device that does not include a light-emitting layer, and only interacts with a hole-transport material and an electron-transport material in an organic material layer to generate an exciplex capable of emitting light, thereby reducing manufacturing costs and processes.

The light-emitting element in this case includes: a substrate; a first metal layer formed on the substrate; a second metal layer formed on the first metal layer; and an organic material layer formed on the first metal layer and the first metal layer. The second metal layer includes a hole transport material and an electron transport material in contact with each other; wherein, the hole transport material interacts with the electron transport material to generate exciton recombination capable of emitting light with a peak wavelength in the first range plasmon coupling between the first metal layer and the second metal layer to shift the peak wavelength of the light, and adjust the distance between the first metal layer and the second metal layer or the first The thickness of the metal layer is such that the peak wave of the light is shifted to the second range or the third range.

This application proposes another light-emitting element, which includes: a substrate having a surface; a first metal layer formed on the substrate and having a first metal portion, a second metal portion, and a an opening between the metal parts and exposing part of the surface; a second metal layer formed above the first metal layer; and an organic material layer formed between the first metal layer and the second metal layer and cover the first metal part, the second metal part and the part of the surface exposed by the opening, the organic material layer also includes a hole transport material and an electron transport material in contact with each other; wherein, the hole transport material and the The electron transport material interacts to generate an exciplex capable of emitting light with a peak wavelength in the first range, and the first metal part and the second metal layer generate a first plasmon coupling so that the peak wavelength of the light is from The first range is shifted to a second range, and the second metal part and the second metal layer generate a second plasmon coupling to shift the peak wavelength of the light from the first range to a third range.

A light-emitting element, characterized in that the light-emitting element comprises: a substrate; a first metal layer formed on the substrate; a second metal layer formed above the first metal layer; a third metal layer formed above the second metal layer; a fourth metal layer formed above the third metal layer; a first organic material layer formed between the first metal layer and the second metal layer; a second organic material layer formed between the second metal layer and the third metal layer; and a third organic material layer formed between the third metal layer and the fourth metal layer; wherein the first organic material layer, the second organic material layer, and the third organic material layer each include a hole transport material and an electron transport material in contact with each other, and the exciplex generated by the interaction between the hole transport material and the electron transport material can be emit light with a peak wavelength in the first range, so that the peak wavelengths of the first light, second light, and third light emitted by the first organic material layer, the second organic material layer, and the third organic material layer are all In the first range, a second plasmon coupling is generated between the second metal layer and the third metal layer to shift the peak wavelength of the second light from the first range to a second range, and the third metal A third plasmon coupling is generated between the layer and the fourth metal layer to shift the peak wavelength of the third light from the first range to a third range.

This application proposes another light-emitting element, which includes a plurality of pixels, and each pixel includes: a substrate having a surface; a first metal layer formed on the substrate; a second metal layer formed on the first metal layer. above the layer; and an organic material layer formed between the first metal layer and the second metal layer and comprising a hole transport material and an electron transport material in contact with each other, and the hole transport material and the electron transport material interact with each other Acting to generate an exciplex capable of emitting light with a peak wavelength in a first range, and the first metal layer and the second metal layer through the organic material layer generate plasmon coupling to shift the peak wavelength of the light; Wherein, each pixel is one of the following: the first metal layer completely covers the surface, by adjusting the thickness of the first metal layer to be smaller or the distance between the first metal layer and the second metal layer to be larger so that The peak wavelength of the light is shifted from the first range to the second range, or by adjusting the thickness of the first metal layer to be larger or the distance between the first metal layer and the second metal layer to be smaller so that the The peak wavelength of the light is shifted from the first range to the third range; the first metal layer has a metal portion covering part of the surface of the substrate and an opening exposing the rest of the surface of the substrate, by adjusting the metal portion The smaller the thickness or the larger the distance between the metal part and the second metal layer, the peak wavelength of the light is shifted from the first range to the second range, or by adjusting the thickness of the metal part to be larger or the The smaller the distance between the metal portion and the second metal layer, the smaller the peak wavelength of the light is shifted from the first range to the third range; the first metal layer has a first metal portion and a second metal layer covering the surface part, by adjusting the thickness of the first metal part to be smaller or the distance between the first metal part and the second metal layer to be larger so that the peak wavelength of the light is shifted from the first range to the second range, by adjusting the thickness of the second metal part to be larger or the distance between the second metal part and the second metal layer to be smaller so that the peak wavelength of the light is shifted from the first range to the third range; and the first The metal layer has a first metal part, a second metal part, and an opening between the first metal part and the second metal part that exposes part of the surface. By adjusting the thickness of the first metal part to be smaller or the first metal part The greater the distance between the metal part and the second metal layer, the greater the peak wavelength of the light is shifted from the first range to the second range. By adjusting the thickness of the second metal part to be larger or the second metal part and the second metal layer The smaller the distance between the second metal layers, the smaller the peak wavelength of the light is shifted from the first range to the third range.

Description of drawings

FIG. 1A and FIG. 1B are schematic diagrams of an embodiment of the light-emitting element of the present case;

2A to 2C are schematic diagrams of another embodiment of the light-emitting element of the present case;

3A to 3C are schematic diagrams of another embodiment of the light-emitting element of the present case;

FIG. 4 is a schematic diagram of another embodiment of the light-emitting element of the present case;

5A and 5B are schematic diagrams of redshift and blueshift of the light-emitting element in FIG. 1A;

6A and 6B are schematic diagrams of redshift and blueshift of the light-emitting element in FIG. 1B;

7 is a schematic diagram of a periodic structure included in the light-emitting element of this case;

8A and 8B are graphs showing the relationship between the periodic structure and the applicable wavelength of the light-emitting element of this case;

9A and 9B are schematic diagrams of application examples of the light-emitting element of the present case; and

FIG. 10 is a schematic diagram of another embodiment of the light-emitting element of the present application.

Among them, reference signs:

100, 200, 300, 400, 500 light emitting elements

10, 201 pixels

201s subpixel

2 substrate

21 surface

3, 3’, 3”, 3a first metal layer

30 Periodic structures

31 First Metal Division

32 Second metal part

33 opening

4a First organic material layer

4b second organic material layer

4c third organic material layer

41, 43 Carrier injection/transport layer

42 organic material layers

421 hole transport layer

422 electron transport layer

5 second metal layer

6 Cathode

61 first metal layer

62 Second metal layer

63 third metal layer

64 fourth metal layer

7 anode

8 thin film transistors

D ₁ distance (thickness)

D _1-g , D _1-r , D _1-b distance

D ₂ , D ₃ , D _2-r , D _2-b , D _2-g thickness

W size

Λ cycle.

detailed description

The following describes the implementation of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed herein. The structures, proportions, sizes, etc. shown in the drawings attached to this manual are only used to match the content disclosed in the manual, for the understanding and reading of those familiar with this technology, and are not used to limit the conditions that can be implemented in this case. Therefore, any modifications, changes or adjustments should still fall within the scope covered by the technical content disclosed in this case without affecting the functions and goals that can be achieved in this case.

Please refer to FIG. 1A and FIG. 1B , the light-emitting element 100 of this case includes a substrate 2, a first metal layer 3, a carrier injection/transport layer 41, an organic material layer 42, a carrier injection/transport layer 43, and a second layer stacked in sequence. Two metal layers 5 .

The material of the substrate 2 can be glass, plastic or conductive metal oxide, such as indium tin oxide (ITO) or indium zinc oxide (IZO). When the substrate 2 is ITO or IZO, it can be used as an anode.

In this embodiment, the first metal layer 3 is formed on the substrate 2 to completely cover the substrate 2 , and the term “completely” here means that no surface of the substrate 2 is exposed. The material of the first metal layer 3 can be metal (such as aluminum or its alloy, silver or its alloy, gold or its alloy), such as Al/LiF, Ag/Al/Ag, Ag/Ge/Ag, or nano metal oxide , such as BCP/V ₂ O ₅ , MoO ₃ , ZnS/Ag/ZnO/Ag, ZnPc/C ₆₀ , and may also include nanometer metal wires. The first metal layer may also act as an electrode, such as an anode or cathode. In addition, as shown in FIG. 1A and FIG. 1B , the first metal layer 3 has a thickness D ₂ of about 5 nm-20 nm.

The carrier injection/transport layer 41 is formed on the first metal layer 3 . When the substrate 2 or the first metal layer 3 is used as an anode and the second metal layer 5 is used as a cathode, the carrier injection/transport layer 41 is a hole injection/transport layer; otherwise, when the substrate 2 or the first metal layer 3 is used as a cathode and When the second metal layer 5 is used as an anode, the carrier injection/transport layer 41 is an electron injection/transport layer.

The organic material layer 42 is formed on the carrier injection/transport layer 41 and includes a hole transport material and an electron transport material in contact with each other. As shown in Figure 1A, the organic material layer 42 is a mixed layer mixed with a hole transport material and an electron transport material; as shown in Figure 1B, the organic material layer 42 includes a hole transport layer 421 made of a hole transport material and The electron transport layer 422 made of electron transport material is in contact with and disposed on the hole transport layer 421 . When the carrier injection/transport layer 41 is a hole injection/transport layer, the hole transport layer 421 is adjacent to the hole injection/transport layer, and can also be regarded as adjacent to the first metal layer 3, while the electron transport layer 422 is adjacent to the electron transport layer 422. The carrier injection/transport layer 43 of the injection/transport layer can also be regarded as adjacent to the second metal layer 5 .

In this embodiment, hole transport materials such as 1,3-bis(nitrogen-carbazolyl)phenyl (1,3-bis(N-carbazolyl)benzene; mCP), 4,49,40-tri(nitrogen -carbazolyl)triphenylamine (4,49,40-tri(N-carbazolyl)triphenylamine; TCTA), 9,9-bis[4-(di-p-tolyl)aminophenyl]fluoro(9,9- di[4-(di-p-tolyl)aminophenyl]fluorine; DTAF), 1,1-bis[(di-4-methylphenylamino)phenyl]cyclohexane (1,1-bis[(di-4 -tolylamino)phenyl]cyclohexane; TAPC), or N,N'-diphenyl-N,N-di-[4-(N,N'diphenyl-amino)phenyl]benzidine (N,N' -diphenyl-N,N'-di-[4-(N,Ndiphenyl-amino)phenyl]benzidine; NPNPB), the structures of which are shown in formulas (1)-(5) respectively.

Electron transport materials such as PO-T2T or 4,6-bis(3,5-bis(3-pyridinyl)phenyl)-2-methylpyrimidine (4,6-Bis(3,5-di(pyridin-3 -yl)phenyl)-2-MethylpyriMidine; B3PYMPM), the structures of which are shown in formulas (6)-(7), respectively.

It should be noted that the hole transport material will interact with the electron transport material to form an exciplex. Using PO-T2T material as the electron transport material with different hole transport materials can produce exciters that can emit different light colors. base complex. For example, PO-T2T/mCP can emit blue light (its peak wavelength is about 380nm-495nm), PO-T2T/TCTA can emit green light (its peak wavelength is about 495nm-570nm), PO-T2T/DTAF can emit yellow light (its peak wavelength is about 570nm-590nm), PO-T2T/TAPC can emit orange light (its peak wavelength is about 590nm-620nm), PO-T2T/NPNPB can emit red light (its peak wavelength is about 570nm-750nm) .

The carrier injection/transport layer 43 is formed on the organic material layer 42 . When the substrate 2 or the first metal layer 3 is used as the anode and the second metal layer 5 is used as the cathode, the carrier injection/transport layer 43 is an electron injection/transport layer; otherwise, when the substrate 2 or the first metal layer 3 is used as the cathode and the second When the two metal layers 5 are used as anodes, the carrier injection/transport layer 43 is a hole injection/transport layer. In addition, as shown in FIG. 1A and FIG. 1B, the stack of the carrier injection/transport layer 41, the organic material layer 42 and the carrier injection/transport layer 43 has a thickness D ₁ of about 75nm-150nm, and the carrier injection/transport layer is adjusted. The thickness of any layer of the transport layer 41 , the organic material layer 42 and the carrier injection/transport layer 43 can change the distance D ₁ between the first metal layer 3 and the second metal layer 5 .

The second metal layer 5 is formed on the carrier injection/transport layer 43, so that the organic material layer 42 is interposed between the first metal layer 3 and the second metal layer 5, so that the first metal layer 3 and the second metal layer The distance between 5 is D ₁ . The material of the second metal layer 5 can be metal (such as aluminum or its alloy, silver or its alloy, gold or its alloy), such as Al/LiF, Ag/Al/Ag, Ag/Ge/Ag, or nano metal oxide , such as BCP/V ₂ O ₅ , MoO ₃ , ZnS/Ag/ZnO/Ag, ZnPc/C ₆₀ , are usually used as cathodes. In addition, as shown in FIG. 1A and FIG. 1B , the second metal layer 5 has a thickness D ₃ of about 20 nm or more.

When a voltage is applied across the second metal layer 5 and the first metal layer 3 or the substrate 2, the hole transport material and the electron transport material in the organic material layer 42 will interact to generate exciters capable of emitting light. At this time, through the coupling between the first metal layer 3 and the second metal layer 5, that is, the plasmon coupling (plasmon coupling) effect, the peak wavelength of the light emitted by the exciplex can be shifted, for example to Shift in the direction of longer wavelength (called red shift, redshift) or shift in the direction of shorter wavelength (blue shift, blue shift). Therefore, adjusting the distance D1 between the _first metal layer 3 and the second metal layer 5 or the thickness D2 of the first metal layer ₃ can make the peak wavelength of the light emitted by the organic material layer 42 redshift or blueshift to different For example, red-shifted from the green band (its peak wavelength is about 495nm-570nm) to the red band (its peak wavelength is about 570nm-750nm), or from the red band (its peak wavelength is about 570nm-750nm) ) red-shifted to the near-infrared light band (its peak wavelength is about less than 1240nm); or, blue-shifted from the green light band to the blue light band (its peak wavelength is about 380nm-495nm).

Referring next to FIGS. 2A to 2C , the light emitting element 200 of this embodiment differs from the light emitting element 100 shown in FIGS. 1A to 1B only in that the first metal layer 3 ′ includes a first metal portion covering the surface of the substrate 2 31 and the second metal part 32. Certainly, the organic material layer 42 also includes a hole transport material and an electron transport material in contact with each other as shown in FIG. 1A or FIG. 1B .

The thickness D _2-r of the first metal portion 31 is adjusted between 5nm-20nm and the distance D _1-r between the first metal portion 31 and the second metal layer 5 is adjusted between 75nm-150nm so that the organic material layer 42 The peak wavelength of the light emitted is shifted from the first range to the second range (that is, red-shifted to a longer peak wavelength); the thickness D _2-b of the second metal part 32 is adjusted between 5nm-20nm And the distance D1 _-b between the second metal part 32 and the second metal layer 5 is adjusted between 75nm-150nm so that the peak wavelength of the light emitted by the organic material layer 42 is shifted from the first range to the third range (that is, blue-shifted to a shorter peak wavelength), and wherein the thickness D _2-b of the second metal portion 32 is greater than the thickness D _2-r of the first metal portion 31 or the second metal portion 32 and the second metal The distance D _1-b between the layers 5 is smaller than the distance D _1-r between the first metal portion 31 and the second metal layer 5 . Thereby, the light emitting element 200 can simultaneously emit light of two different wavelength bands. Alternatively, one of the first metal portion 31 and the second metal portion 32 can be replaced with an opening (not shown in the figure), then the light emitting element 200 can emit the light originally generated by the exciplex and the red-shifted or Light after blue shift.

In addition, adjusting the thickness D _{2 -r} of the first metal portion 31 or the distance D _{1 -r} between the first metal portion 31 and the second metal layer 5 can change the value in the second range. Adjusting the thickness D _{2 - b} of the second metal portion 32 or the distance D _{1 - b} between the second metal portion 32 and the second metal layer 5 can change the value in the third range. As shown in FIG. 2A, the thickness D _2-r of the first metal portion 31 is different from the thickness D _2-b of the second metal portion 32, and the distance D ₁ -b between the first metal portion 31 and the second metal layer 5 _r and the distance D1 _-b between the second metal portion 32 and the second metal layer 5 are the same, that is, the overall thickness of the stack of the carrier injection/transport layer 41, the organic material layer 42 and the carrier injection/transport layer 43 Similarly, the overall thickness _D3 of the second metal layer 5 is the same. 2B and 2C, the thickness D _2-r of the first metal portion 31 is the same as the thickness D _2-b of the second metal portion 32, and the distance between the first metal portion 31 and the second metal layer 5 D _1-r and the distance D _1-b between the second metal part 32 and the second metal layer 5 are different; wherein, in FIG. 2B , the organic material layer 42 is mainly used to adjust the first metal part 31 and the second metal layer 5 The distance D _1-r between and the distance D _1-b between the second metal part 32 and the second metal layer 5, while the overall thickness of the carrier injection/transport layer 41 is the same, and the overall thickness of the carrier injection/transport layer 43 is Similarly, the overall thickness _D3 of the second metal layer 5 is the same; in addition, in FIG. 2C , the distance D1 _-r between the first metal part 31 and the second metal layer 5 and the second The distance D _1-b between the metal portion 32 and the second metal layer 5 is the same overall thickness of the organic material layer 42 , and the overall thickness D ₃ of the carrier injection/transport layer 43 is the same as the second metal layer 5 . Also, the carrier injection/transport layer 43 can be used to adjust the distance D 1-r between the first metal portion 31 and the second metal layer 5 and the distance D _{1 -r} between the second metal portion 32 and the second metal layer 5 . _b .

3A to 3C, the light emitting element 300 of this embodiment differs from the light emitting element 100 shown in FIGS. 1A to 1B only in that the first metal layer 3" can be a patterned metal layer or a grid metal layer. , which includes a first metal portion 31 covering the surface 21 of the substrate 2, a second metal portion 32, and an opening 33 between the first metal portion 31 and the second metal portion 32 to expose part of the surface 21. Of course, the organic material Layer 42 also includes a hole transport material and an electron transport material in contact with each other as shown in FIG. 1A or FIG. 1B .

In the light emitting device 300 , the hole transport material in the organic material layer 42 interacts with the electron transport material to generate an exciplex capable of emitting light, and the peak wavelength of the light is in the first range. In addition, the first coupling occurs between the first metal portion 31 and the second metal layer 5, that is, the plasmon coupling effect, so that the peak wavelength of the light is shifted from the first range to the second range (for example, red shifted to longer peak wavelengths). In addition, the second plasmon coupling is generated between the second metal part 32 and the second metal layer 5 , so that the peak wavelength of the light is shifted from the first range to the third range (eg blue-shifted to a shorter peak wavelength).

It should be noted that the light is isotropic. When the second metal layer 5 has a reflection effect, light with a peak wavelength in the first range can pass through the opening 33 to leave the light emitting element 300. The peak wavelength The light in the second range can pass through the first metal part 31 to leave the light-emitting element 300, and the light with the peak wavelength in the third range can pass through the second metal part 32 to leave the light-emitting element 300; when the second metal layer 5 is transparent At this time, the aforementioned light rays with peak wavelengths in the first range, the second range and the third range can also pass through the second metal layer 5 to leave the light emitting element 300 .

Adjusting the thickness D _{2 -r} of the first metal portion 31 or the distance D _{1 -r} between the first metal portion 31 and the second metal layer 5 can change the value in the second range. Adjusting the thickness D _{2 - b} of the second metal portion 32 or the distance D _{1 - b} between the second metal portion 32 and the second metal layer 5 can change the value in the third range. As shown in FIG. 3A , the thickness D _2-r of the first metal portion 31 is different from the thickness D _2-b of the second metal portion 32, and the distance D ₁ -b between the first metal portion 31 and the second metal layer 5 _r , the distance D _1-b between the second metal portion 32 and the second metal layer 5 and the distance D _1-g between the substrate 2 corresponding to the opening 33 and the second metal layer 5 are the same, that is, carrier injection The overall thickness of the stack of the /transport layer 41 , the organic material layer 42 and the carrier injection/transport layer 43 is the same, and the overall thickness _D3 of the second metal layer 5 is the same. As shown in FIG. 3B and FIG. 3C, the thickness D _2-r of the first metal portion 31 is the same as the thickness D _2-b of the second metal portion 32, and the distance between the first metal portion 31 and the second metal layer 5 D _1-r and the distance D _1-b between the second metal part 32 and the second metal layer 5 are different; wherein, in FIG. 3B , the organic material layer 42 is mainly used to adjust the first metal part 31 and the second metal layer 5 The distance D _1-r between and the distance D _1-b between the second metal part 32 and the second metal layer 5, while the overall thickness of the carrier injection/transport layer 41 is the same, and the overall thickness of the carrier injection/transport layer 43 is Similarly, the thickness _{D3 of} the second metal layer 5 is the same as a whole; in addition, in FIG. The distance D _1-b between the metal portion 32 and the second metal layer 5 is the same overall thickness of the organic material layer 42 , and the overall thickness D ₃ of the carrier injection/transport layer 43 is the same as the second metal layer 5 . Also, the carrier injection/transport layer 43 can be used to adjust the distance D 1-r between the first metal portion 31 and the second metal layer 5 and the distance D _{1 -r} between the second metal portion 32 and the second metal layer 5 . _b .

For example, the peak wavelength of the light emitted by the exciplex is 495nm-570nm, the thickness D _2-r of the first metal part 31 is about 5nm-20nm and the distance D _1-r between it and the second metal layer 5 is about 75nm-150nm, the first plasmon coupling will be generated between the first metal part 31 and the second metal layer 5 to shift the peak wavelength of the light to 570nm-750nm, and the thickness D of the second metal part 32 is _2-b About 5nm-20nm and the distance D1 _-b between it and the second metal layer 5 is about 75nm-150nm, wherein the thickness D2 _-b of the second metal part 32 is greater than the thickness D2 _-r of the first metal part 31 or The distance D _1-b between the second metal part 32 and the second metal layer 5 is smaller than the distance D _1-r between the first metal part 31 and the second metal layer 5, then the second metal part 32 and the second metal layer 5 The second plasmon coupling can be generated between the layers 5 to shift the peak wavelength of the light to 380nm-495nm (blue light band). For another example, the peak wavelength of the light emitted by the exciplex is 570nm-750nm, the thickness D _2-r of the first metal part 31 is about 5nm-20nm and the distance D _1-r between it and the second metal layer 5 About 150nm-1000nm, the first plasmon coupling will be generated between the first metal part 31 and the second metal layer 5 so that the peak wavelength of the light is shifted to less than 1240nm, and the thickness D of the second metal part 32 is _2-b About 5nm-20nm and the distance D1 _-b between it and the second metal layer 5 is about 30nm-75nm, then the second plasmon coupling can be generated between the second metal part 32 and the second metal layer 5 so that the light The peak wavelength is shifted to greater than 305 nm. In this way, the light-emitting element 300 can emit light of three different wavelength bands, such as red light, green light and blue light, to be mixed into white light. In addition, by adjusting the thickness of the first metal part 31 and the second metal part 32 covering the surface 21 of the substrate 2 The area and the area of the exposed surface of the opening 33 can change the ratio of green light, red light and blue light.

1A-1B, 2A-2C and 3A-3C are used to illustrate the structure of the light-emitting element of this case, which includes the substrate 2 and the first metal layer 3 (or 3' or 3") stacked in sequence. , a carrier injection/transport layer 41, an organic material layer 42 having a hole transport material and an electron transport material, a carrier injection/transport layer 43 and a second metal layer 3, without including the light-emitting layer described in the prior art, wherein , the first metal layer 3 (or 3' or 3") can be one of the following: the thickness is uniform and completely covers the surface of the substrate 2, as shown in Fig. 1A-Fig. light; including at least two metal parts 31 and 32 with different thicknesses or different distances from the second metal layer and there is no space between these metal parts 31 and 32, as shown in Figures 2A-2C, the formed The light-emitting element 200 can emit light in two wavelength bands; and includes at least two metal parts 31 and 32 and an opening 33 between the metal parts that exposes part of the surface of the substrate 2, as shown in FIGS. 3A-3C . The formed light emitting element 300 can emit light of three wavelength bands.

Please refer to FIG. 4 , in this embodiment, a light-emitting element 400 includes a substrate 2, a first metal layer 61, a first organic material layer 4a, a second metal layer 62, a second organic material layer 4b, and a first stacked in sequence. Three metal layers 63 , a third organic material layer 4 c , and a fourth metal layer 64 .

The size and material of the substrate 2 are the same as those of the substrate 2 in the first embodiment. The first metal layer 61, the second metal layer 62, and the third metal layer 63 are the same in size and material as the first metal layer 3 in the first embodiment, for example, at 5nm-20nm, can be made of metal (Al/LiF, Ag/ Al/Ag, Ag/Ge/Ag) or nano metal oxides (BCP/V ₂ O ₅ , MoO ₃ , ZnS/Ag/ZnO/Ag, ZnPc/C ₆₀ ). The fourth metal layer 64 has the same size and material as the second metal layer 5 in the first embodiment to serve as a cathode, and one of the substrate 2 or the first metal layer 61 can serve as an anode. The first organic material layer 4a, the second organic material layer 4b and the third organic material layer 4c are the same as the organic material layer 4 in the first embodiment, such as green fluorescent Alq ₃ material, and include hole transport materials in contact with each other with electron transport materials.

The first organic material layer 4a, the second organic material layer 4b, and the third organic material layer 4c all have electron-transport materials and hole-transport materials, and the electron-transport materials and hole-transport materials interact to generate peak wavelengths that can be emitted. The light in the first range makes the peak wavelength of the first light emitted by the first organic material layer 4a, the second light emitted by the second organic material layer 4b, and the third light emitted by the third organic material layer 4c Both in the first range, the first metal layer 61 and the second metal layer 62 are used to generate gain for the first light, and the second plasmon coupling is generated between the second metal layer 62 and the third metal layer 63 to make the first light The peak wavelength of the second light is shifted from the first range to the second range, and a third plasmon coupling is generated between the third metal layer 63 and the fourth metal layer 64 so that the peak wavelength of the third light is shifted from the first range to the third range. In addition, adjust the thickness D _2-g of the first metal layer 61 , the thickness D _2-r of the second metal layer 62 , or the distance D _1-g between the first metal layer 61 and the second metal layer 62 to change The gain of the first ray. Adjust the thickness D _2-r of the second metal layer 62, the thickness D _2-b of the third metal layer 63, or the distance D _1-r between the second metal layer 62 and the third metal layer 63 to change the second range value. Adjust the thickness D _2-b of the third metal layer 63 , the thickness of the fourth metal layer 64 , or the distance D _1-b between the third metal layer 63 and the fourth metal layer 64 to change the value in the third range.

For example, the peak wavelengths of the first, second, and third light rays are between 495nm and 570nm, wherein the wavelength band of the second light rays can cover 495nm-750nm, and the waveband of the third light rays can cover 380nm _- 570nm, then the thickness D2 _-r and D _2-b are both within 5nm-20nm and the distance D _1-r is between 75nm-150nm after the second plasmon coupling between the second metal layer 62 and the third metal layer 63, the peak wavelength shift of the second light to 570nm-750nm, and after the third plasma coupling between the third metal layer 63 and the fourth metal layer 64 whose distance D _1-b is 75nm-150nm and less than the distance D _1-r , the peak wavelength of the third light Shift to 380nm-495nm. For another example, the peak wavelengths of the first, second, and third rays are between 570nm and 750nm, wherein the wavelength band of the second light can cover 570nm-1240nm, and the waveband of the third light can cover 305nm-750nm, then the thickness D _2-r and D _2-b are both within 5nm-20nm and the distance D _1-r is between 150nm-1000nm after the second plasmon coupling between the second metal layer 62 and the third metal layer 63, the peak wavelength of the second light The peak wavelength of the third light is shifted to less than 1240nm, and after the third plasmon coupling between the third metal layer 63 and the fourth metal layer 64 whose distance D _1-b is 30nm-75nm and less than the distance D _1-r shifted to greater than 305nm. Accordingly, the light emitting element 300 can generate light in three wavelength bands of green, red, and blue, and emit white light composed of the light in the three wavelength bands.

The relationship between the thickness of each layer and the peak wavelength of light emitted by the exciplex is further illustrated in Tables 1-12 below.

First, Table 1 and Table 2 illustrate the difference between the comparative example not including the first metal layer (ie, its thickness D2 is ₀ nm) and the experimental example including the first metal layer. It should be noted that, in Comparative Example 1-4, the material of the second metal layer is aluminum; in Experimental Example 1-4, the materials of the first metal layer and the second metal layer are all aluminum; in Comparative Example 1- 2 and Experimental Example 1-2, the organic material layer is a mixed layer of 1:1 TAPC and B3PYMPM; in Comparative Example 3-4 and Experimental Example 3-4, the organic material layer includes a layer of parallel stacking TAPC and a layer of B3PYMPM. In addition, in Table 1-Table 12, D ₁ represents the distance between the first metal layer and the second metal layer, which can also represent D _1-r and D _1-b ; D ₂ represents the thickness of the first metal layer, which can also represent Can represent D _2-r , D _2-b .

Table 1

D ₁ (nm) D ₂ (nm) Peak wavelength(nm) displacement Comparative example 1 100 0 520 before shifting Experimental example 1 100 15 497 blue shift Comparative example 2 130 0 517 before shifting Experimental example 2 130 15 572 redshift

According to Table 1 and referring to Fig. 5A and Fig. 5B, it is found that Comparative Example ₁ is compared with Experimental Example ₁ , when the distance D1 is 100nm and the thickness D2 of the first metal layer is 0nm, the peak wavelength of the light is 520nm, as shown in Fig. As shown in the solid line curve of 5A; when the thickness D ₂ of the first metal layer is 15 nm, the peak wavelength of the light is blue-shifted to 497 nm, as shown in the dotted line curve of FIG. 5A . Comparative Example 2 Compared with Experimental Example ₂ , when the distance D1 is 130nm and the _first metal layer thickness D2 is 0nm, the peak wavelength of the light is 517nm, as shown in the solid line curve of Figure 5B; when the first metal layer When the layer thickness D ₂ is 15 nm, the peak wavelength of the light is red-shifted to 572 nm, as shown in the dotted curve in Fig. 5B.

Table 2

D ₁ (nm) D ₂ (nm) Peak wavelength(nm) displacement Comparative example 3 90 0 492 before shifting Experimental example 3 90 15 460 blue shift Comparative example 4 130 0 506 before shifting Experimental example 4 130 15 569 redshift

According to Table 2 and referring to Fig. 6A and Fig. 6B, it is found that comparative example 3 is compared with experimental example ₃ , when the distance D1 is 90nm and the thickness D2 of the first metal layer is 0nm, the peak wavelength of the light is _492nm , as shown in Fig. As shown in the solid line curve of 6A; when the thickness D ₂ of the first metal layer is 15 nm, the peak wavelength of the light is blue-shifted to 460 nm, as shown in the dotted line curve of FIG. 6A . Compared with Experimental Example 4 in Comparative Example ₄ , when the distance D1 is 130nm and the thickness D2 of the _first metal layer is 0nm, the peak wavelength of the light is 506nm, as shown in the solid line curve of Figure 6B; when the first metal layer When the layer thickness D ₂ is 15 nm, the peak wavelength of the light is red-shifted to 569 nm, as shown in the dotted line curve in Fig. 6B.

Therefore, Table 1-2 and Figures 5A-6B show that the greater the distance D1 between the _first metal layer and the second metal layer, the more the peak wavelength of the light shifts to the red band; the first metal layer and the second metal layer The smaller the distance D ₁ between layers, the more the peak wavelength of the light shifts to the blue light band. Accordingly, the plasmon coupling effect between the first metal layer and the second metal layer in this case can shift the peak wavelength of the light emitted by the exciplex, if the peak wavelength of the light falls within the first range ( For example, about 495nm-570nm) and the light covers the visible light range, then the plasmon coupling effect can make the peak wavelength of the light redshift to the second range (for example, red light band, about 570nm-750nm) or blue shift to the third Range (such as blue light band, about 380nm-495nm).

Then use Table 3-12 to illustrate the adjustment of the thickness D ₂ of the first metal layer and the distance D ₁ between the first metal layer and the second metal layer (that is, the carrier injection/transport layer, the organic material layer, and the carrier injection/transport layer The relationship between the stack thickness) and the peak wavelength of the light. It should be noted that in Table 3-5, the electron transport material and hole transport material used are PO-T2T and TCTA respectively, the peak wavelength of the light emitted by the exciplex is about 530nm, and the used The materials of the first metal layer and the second metal layer are respectively Al/Al, Ag/Ag, Au/Au in Table 3-5. In Table 6-9, the peak wavelength of the light emitted by the exciplex is about 630nm. For example, PO-T2T and NPNPB are used as the electron transport material and the hole transport material respectively, and the first metal layer and the The materials of the second metal layer are respectively Al/Al, Ag/Ag, Au/Au in Table 6-8. (Extinction coefficient)) value is set to 1.75 red shift simulation results. In Table 10-12, the peak wavelength of the light emitted by the exciplex is between 570nm and 750nm, and the materials used for the first metal layer and the second metal layer are Al/Al, Ag/Ag , Au/Au.

table 3

Table 4

table 5

Table 6

Table 7

Table 8

Table 9

D ₁ (nm) Peak wavelength(nm) 200 500 500 850 1000 1240

Table 10

Table 11

Table 12

It can be known from Table 3-5 that the thickness D ₂ of the first metal layer can be adjusted between 5 nm-20 nm, and the distance D ₁ between the first metal layer and the second metal layer can be adjusted between 75 nm-150 nm. The greater the distance D1 between the _first metal layer and the _second metal layer, and the smaller the thickness D2 of the first metal layer, the more the peak wavelength of the light shifts to the red light band so that the light becomes red light; the first metal The smaller the distance D1 between the _first metal layer and the _second metal layer, and the larger the thickness D2 of the first metal layer, the more the peak wavelength of the light shifts to the blue band to make the light blue.

It can be seen from Table 6-9 that the thickness D2 of the first metal layer can be adjusted between 5nm _- 20nm, and the distance D1 between the _first metal layer and the second metal layer can also be adjusted between 150nm-500nm, even At 1000nm, the light can shift from the red light band (570nm-750nm) to the near-infrared band (about less than 1240nm). Especially from Table 9, when the distance D ₁ between the first metal layer and the second metal layer is 200, 500 or 1000 nm, the light emitting element can emit light with a peak wavelength of 500 nm, 850 nm or 1240 nm.

It can be seen from Table 10-12 that the thickness D2 of the first metal layer can be adjusted between 5nm _- 20nm, and the distance D1 between the _first metal layer and the second metal layer can also be adjusted between 30nm-75nm. The light can shift from the red light band (570nm-750nm) to the near ultraviolet band (about greater than 305nm).

In addition, please refer to FIG. 7 , the metal parts 31 and 32 in the light emitting element 300 can form a plurality of periodic structures 30 to generate gain for light with peak wavelengths in different ranges. As shown in FIG. 7 , the size W of the periodic structure 30 is between 40nm-437nm, and the period Λ is between 50nm-965nm. That is to say, the respective widths of the metal portions 31 and 32 are the width W of the periodic structure 30 , and the period Λ of the periodic structure 30 is from the tail end of the metal portion 31 to the tail end of the metal portion 32 . It should be noted that although the shape of the periodic structure is shown in the diagram as a square wave, this case does not limit its shape. In this way, the light generated by the exciplex, or the red-shifted or blue-shifted light generated by the plasmon coupling effect, can pass through the periodic structure 30 to generate gain.

Tables 13-15 respectively show the relationship between period Λ, size W and applicable wavelength of periodic structures of Al, Ag and Au.

Table 13

wavelength(nm) 340 400 450 500 550 600 650 700 750 800 Period (nm) 348 435 507 579 646 714 778 845 910 965 Size (nm) 170 208 237 268 298 327 345 383 411 437

Table 14

wavelength(nm) 380 400 450 500 550 600 650 700 750 800 Period (nm) 50 171 300 392 466 534 596 657 716 773 Size (nm) 40 124 189 229 267 300 334 365 398 429

Table 15

wavelength(nm) 510 525 550 600 650 700 750 800 Period (nm) 62 223 462 462 545 615 680 738 Size (nm) 45 157 209 260 299 326 356 382

Referring to Table 13-15 and Fig. 8A and Fig. 8B, wherein, the curves shown in Fig. 8A and Fig. 8B respectively represent Al, Ag and Au from top to bottom, taking the material as Al and the wavelength of 550nm (green light) as an example, When the period Λ of the periodic structure 30 is 646 nm and the size W is 298 nm, light with a peak wavelength at 550 nm will generate gain. Taking the material as Ag and the wavelength of 450nm (blue light) as an example, when the period Λ of the periodic structure 30 is 300nm and the size W is 189nm, the light with the peak wavelength at 450nm will generate gain. Taking the material as Au and the wavelength of 650nm (red light) as an example, when the period Λ of the periodic structure 30 is 545nm and the size W is 299nm, the light with the peak wavelength at 650nm will generate gain, and it can be seen from Table 15 , Au is more suitable for long wavelength gain. Therefore, by adjusting the period Λ and the size W of the periodic structure 30 , light with a peak wavelength in a certain wavelength band can generate gain.

In addition, the above-mentioned light-emitting device 300 can be applied to an active-matrix organic light-emitting diode (AMOLED) display or a passive-matrix organic light-emitting diode (PMOLED) display. Referring to FIG. 9A, the light-emitting element 300 is used as a pixel 201 in the display of FIG. 9A. The pixel 201 also includes three sub-pixels 201s of R, G, and B. Each sub-pixel 201s is actuated to emit light by a thin-film transistor (TFT) 8, so that Pixel 201 can emit red, green, and blue light, and use TFT as current control to adjust the luminous ratio of R, G, and B three sub-pixels 201s to adjust the luminous color of each pixel 201, so that the AMOLED display can present dynamic color grayscale images. Also refer to FIG. 9B . The difference from FIG. 9A lies in the actuated light emitting method. The passive matrix organic light emitting diode display uses the cathode 6 and the anode 7 to actuate the light emission, and other features are the same as in FIG. 9A .

In addition, in other embodiments, the light-emitting element of this application can be used as one of the pixels of the display. In other words, each pixel can include a substrate, a first metal layer, an organic material layer and a second layer stacked on the substrate in sequence. A metal layer, wherein the first metal layer can be one of the following: the thickness of the first metal layer is zero, then the pixel will emit light generated by the organic material layer; the thickness of the first metal layer is uniform and completely covers the substrate surface, the pixel can emit light of a wavelength band, that is, light after redshift or blueshift; the first metal layer includes a metal part covering part of the surface of the substrate and an opening exposing the rest of the surface of the substrate , then the pixel can emit light of two wavelength bands, that is, the light generated by the organic material layer and the light after red shift or blue shift; the first metal layer includes at least two metal parts covering the surface of the substrate, then the The pixel can emit light of two wavelength bands, that is, light after red shift and blue shift; and the first metal layer includes at least two metal parts covering the surface of the substrate and a part between the two metal parts exposing the substrate With the opening on the surface, the pixel can emit light of three wavelength bands, that is, the light generated by the organic material layer, the red-shifted and the blue-shifted light. For example, please refer to FIG. 10 , the light-emitting element 500 of this case includes a plurality of pixels 10, and each pixel 10 includes a substrate 2, a first metal layer 3a, a carrier injection/transport layer 41, an organic material layer 42, and a carrier layer stacked in sequence. The sub-injection/transport layer 43, the second metal layer 5, and the organic material layer 42 can emit light with a peak wavelength in the first range. In each pixel 10, the substrate 2, the organic material layer 42 and the second metal layer 5 are the same as those shown in the above-mentioned embodiments, and the first metal layer 3a can be one of the following: the thickness is uniform and completely covers the surface of the substrate 2 (The second or six pixels are counted from the left as in Fig. 10), the smaller the thickness of the first metal layer 3a or the larger the distance between the first metal layer 3a and the second metal layer 5, the light can be made The peak wavelength of the light is shifted from the first range to the second range, or, the greater the thickness of the first metal layer 3a or the smaller the distance between the first metal layer 3a and the second metal layer 5, the light can be made The peak wavelength is shifted from the first range to the third range; the first metal layer 3a has a metal portion covering part of the surface of the substrate 2 and an opening that exposes the remaining surface of the substrate 2 (as counted from the left in FIG. 10 three pixels), by adjusting the thickness of the metal part to be smaller or the distance between the metal part and the second metal layer 5 to be larger, the peak wavelength of the light can be shifted from the first range to the second range, or , by adjusting the thickness of the metal part to be larger or the distance between the metal part and the second metal layer 5 to be smaller, the peak wavelength of the light can be shifted from the first range to the third range; the first metal layer 3a Having a first metal part and a second metal part, by adjusting the thickness of the first metal part to be smaller or the distance between the first metal part and the second metal layer 5 to be larger, the peak wavelength of the light can be changed from the first metal part to the second metal layer 5. A range is shifted to the second range, and the peak wavelength of the light can be changed from the first range by adjusting the thickness of the second metal part to be larger or the distance between the second metal part and the second metal layer 5 to be smaller. Displaced to the third range; the first metal layer 3a has a first metal portion, a second metal portion and an opening formed between the first metal portion and the second metal portion to expose part of the surface of the substrate 2 (as shown in FIG. 10 from the left to the first or five pixels), by adjusting the smaller the thickness of the first metal part or the larger the distance between the first metal part and the second metal layer, the peak wavelength of the light can be made Shifting from the first range to the second range, the peak wavelength of the light can be changed from the second metal layer to the second metal layer by adjusting the thickness of the second metal part to be larger or the distance between the second metal part and the second metal layer to be smaller. The first range is shifted to the third range; and when the thickness of the first metal layer 3 a is zero (the fourth pixel counted from the left as shown in FIG. 10 ), the original wavelength will be maintained without shifting.

In summary, the light-emitting element of this case does not include a light-emitting layer, and only interacts with the hole-transport material and the electron-transport material in the organic material layer to generate an exciplex capable of emitting light, thereby reducing production costs and In addition, through the plasmon coupling effect of the first and second metal layers on the upper and lower sides of the organic material layer, the peak wavelength of the light of the exciplex can be red-shifted or blue-shifted, so as to generate blue fluorescence/phosphorescence A light-emitting element that emits blue light without using a guest luminescent material, a light-emitting element that emits red light without using a red fluorescent/phosphorescent guest luminescent material, or a light-emitting element that emits white light without using a red or blue fluorescent/phosphorescent guest luminescent material.

The above-mentioned embodiments are only illustrative to illustrate the effects of this case, and are not intended to limit this case. Anyone skilled in this art can modify and change the above-mentioned embodiments without violating the spirit and scope of this case. Therefore, the protection scope of rights in this case should be as listed in the claims.

Claims (39)

1. a kind of light-emitting component, it is characterized in that, the light-emitting component includes：

Substrate；

The first metal layer, it is formed on the substrate；

Second metal layer, it is formed above the first metal layer；And

Organic material layer, it is formed between the first metal layer and the second metal layer and the hole transport including contacting with each other Material and electron transport material,

Wherein, the hole mobile material and the electron transport material interact can send peak wavelength and be located at the first model to produce The exciplex of the light enclosed, and plasmon coupling is produced between the first metal layer and the second metal layer so that the light The peak wavelength displacement of line, and adjust the thickness of the distance or the first metal layer between the first metal layer and the second metal layer Degree, can make the peak wavelength of the light be moved to the second scope or the 3rd scope.

2. light-emitting component as claimed in claim 1, it is characterized in that, the substrate has a surface, and the first metal layer is formed In on the substrate so that the surface of the substrate is completely covered.

3. light-emitting component as claimed in claim 1, it is characterized in that, the thickness of the first metal layer is in 5nm-20nm, and this first Distance between metal level and the second metal layer exists in 75nm-150nm, first scope in 495nm-570nm, second scope 570nm-750nm, the 3rd scope in 380nm-495nm, when the thickness of the first metal layer is smaller or the first metal layer with Distance between the second metal layer is bigger, and the peak wavelength of the light is from first range displacement to second scope；When this The thickness of one metal level is bigger or distance between the first metal layer and the second metal layer is smaller, the peak wavelength of the light from First range displacement is to the 3rd scope.

4. light-emitting component as claimed in claim 1, it is characterized in that, the thickness of the first metal layer is in 5nm-20nm, and this first Distance between metal level and the second metal layer is in 150nm-1000nm, and first scope is in 570nm-750nm, second model Enclose more than first scope and be less than 1240nm.

5. light-emitting component as claimed in claim 1, it is characterized in that, the thickness of the first metal layer in 5nm-20nm, and this Distance between one metal level and the second metal layer is less than first scope and is more than in 30nm-75nm, then the 3rd scope 305nm。

6. light-emitting component as claimed in claim 1, it is characterized in that, first scope exists in 495nm-570nm, second scope 570nm-750nm, the 3rd scope is in 380nm-495nm, and the first metal layer includes the first metal portion and the second metal portion, The thickness of first metal portion adjusts between 5nm-20nm and the distance between first metal portion and the second metal layer exists Adjusted between 75nm-150nm, the peak wavelength of the light can be made from first range displacement to second scope；Second gold medal The thickness in category portion adjusts between 5nm-20nm and the distance between second metal portion and the second metal layer is in 75nm-150nm Between adjust, the peak wavelength of the light can be made from first range displacement to the 3rd scope, and the thickness of second metal portion Degree is less than first metal portion more than the distance between the thickness or second metal portion and the second metal layer of first metal portion With the distance between the second metal layer.

7. light-emitting component as claimed in claim 1, it is characterized in that, the material of the substrate is glass, plastic cement or conducting metal oxygen Compound.

8. light-emitting component as claimed in claim 6, it is characterized in that, first gold medal can be adjusted by adjusting the thickness of the organic material layer The distance between distance and second metal portion and the second metal layer between category portion and the second metal layer.

9. light-emitting component as claimed in claim 1, it is characterized in that, the organic material layer includes by the hole mobile material and is somebody's turn to do The mixed layer that electron transport material mixing is formed.

10. light-emitting component as claimed in claim 1, it is characterized in that, the organic material layer is included by the hole mobile material institute The hole transmission layer of composition and contact and the electronics for being arranged on the hole transmission layer and being made up of the electron transport material Transport layer.

11. light-emitting component as claimed in claim 10, it is characterized in that, the substrate or the first metal layer are as anode, and this Two metal levels are as negative electrode；The hole transmission layer is adjacent to the first metal layer, and the electron transfer layer is adjacent to the second metal layer.

12. light-emitting component as claimed in claim 1, it is characterized in that, the substrate or the first metal layer as anode, and this Two metal levels are as negative electrode；Formed with hole injection layer between the first metal layer and the organic material layer, and second metal Formed with electron injecting layer between layer and the organic material layer.

13. light-emitting component as claimed in claim 1, it is characterized in that, the first metal layer and the second metal layer by metal or Nano-metal-oxide is formed.

14. a kind of light-emitting component, it is characterized in that, the light-emitting component includes：

Substrate, it has a surface；

The first metal layer, it is formed on the substrate and with the first metal portion, the second metal portion and positioned at first metal portion And second between the metal portion and exposed part surface opening portion；

Second metal layer, it is formed above the first metal layer；And

Organic material layer, it is formed between the first metal layer and the second metal layer and covers the first metal portion, second Metal portion and by the exposed part in the opening portion surface, the organic material layer and the hole mobile material including contacting with each other And electron transport material,

Wherein, the hole mobile material and the electron transport material interact and generation can send peak wavelength and be located at the first model The exciplex of the light enclosed, and first metal portion produces the first plasmon coupling so that the light with the second metal layer The peak wavelength of line from first range displacement to the second scope, second metal portion and the second metal layer produce the second grade from Daughter couples so that the peak wavelength of the light is from first range displacement to the 3rd scope.

15. light-emitting component as claimed in claim 14, it is characterized in that, first scope is in 495nm-570nm, second scope In 570nm-750nm, the 3rd scope adjusted between 5nm-20nm in 380nm-495nm, the thickness of first metal portion and Distance between first metal portion and the second metal layer adjusts between 75nm-150nm, can make the peak wavelength of the light certainly First range displacement is to the second scope；The thickness of second metal portion adjusted between 5nm-20nm and second metal portion with Distance between the second metal layer adjusts between 75nm-150nm, can make the peak wavelength of the light from first range displacement To the 3rd scope, and the thickness of second metal portion is more than the thickness or second metal portion and second gold medal of first metal portion Belong to the distance of interlayer less than the distance between first metal portion and the second metal layer.

16. light-emitting component as claimed in claim 14, it is characterized in that, first scope is green light band, and second scope is Red spectral band, the 3rd scope are blue wave band, to send the white light being made up of green glow, feux rouges and blue light in the light-emitting component When, it is adjusted by that first metal portion covers the area on the surface, second metal portion covers the area and the opening on the surface The area on the surface of the exposed part in portion can change the ratio of the green glow, the feux rouges and the blue light.

17. light-emitting component as claimed in claim 14, it is characterized in that, first scope is in 570nm-750nm, second scope More than first scope and it is less than 1240nm, the 3rd scope is less than first scope and is more than 305nm, first metal portion Thickness adjusts between 5nm-20nm and the distance between first metal portion and the second metal layer is between 150nm-1000nm Adjustment, the thickness of second metal portion is adjusted between 5nm-20nm and the distance between second metal portion and the second metal layer Adjusted between 30nm-75nm.

18. light-emitting component as claimed in claim 14, it is characterized in that, the material of the substrate is glass, plastic cement or conducting metal Oxide.

19. light-emitting component as claimed in claim 14, it is characterized in that, the organic material layer include by the hole mobile material and The mixed layer that electron transport material mixing is formed.

20. light-emitting component as claimed in claim 14, it is characterized in that, the organic material layer is included by the hole mobile material institute The hole transmission layer of composition and contact and the electronics for being arranged on the hole transmission layer and being made up of the electron transport material Transport layer.

21. light-emitting component as claimed in claim 20, it is characterized in that, the substrate or the first metal layer are as anode, and this Two metal levels are as negative electrode；The hole transmission layer is adjacent to the first metal layer, and the electron transfer layer is adjacent to the second metal layer.

22. light-emitting component as claimed in claim 14, it is characterized in that, the substrate or the first metal layer are somebody's turn to do as anode Second metal layer is as negative electrode；Formed with hole injection layer between the first metal layer and the organic material layer, and second gold medal Belong between layer and the organic material layer formed with electron injecting layer.

23. light-emitting component as claimed in claim 14, it is characterized in that, the first metal layer and the second metal layer are by metal Or nano-metal-oxide is formed, and the first metal layer is patterned metal layer or grid-shaped metal layer.

24. light-emitting component as claimed in claim 14, it is characterized in that, first metal portion and second metal portion composition are multiple Periodic structure, so that peak wavelength produces gain, the cycle in the light of first scope, the second scope or the 3rd scope Property structure size is between 40nm-437nm and the cycle is between 50nm-965nm.

25. a kind of light-emitting component, it is characterized in that, the light-emitting component includes：

Substrate；

The first metal layer, it is formed on the substrate；

Second metal layer, it is formed above the first metal layer；

3rd metal level, it is formed above the second metal layer；

4th metal level, it is formed at the 3rd metal layer；

First organic material layer, it is formed between the first metal layer and the second metal layer；

Second organic material layer, it is formed between the second metal layer and the 3rd metal level；And

3rd organic material layer, it is formed between the 3rd metal level and the 4th metal level；

Wherein, first organic material layer, second organic material layer, the 3rd organic material layer each include what is contacted with each other Hole mobile material and electron transport material, and swash caused by the hole mobile material and electron transport material interaction Base complex can send the light that peak wavelength is located at the first scope, so that first organic material layer, second organic material Layer, the 3rd organic material layer each send the peak wavelength of the first light, the second light, the 3rd light all in the first scope It is interior, the second plasmon coupling is produced between the second metal layer and the 3rd metal level so that the peak wavelength of second light From first range displacement to the second scope, and three plasma body coupling is produced between the 3rd metal level and the 4th metal level Close so that the peak wavelength of the 3rd light is from first range displacement to the 3rd scope.

26. light-emitting component as claimed in claim 25, it is characterized in that, first scope is in 495nm-570nm, and second model It is trapped among 570nm-750nm, in 380nm-495nm, the thickness of the second metal layer and the 3rd metal level all exists the 3rd scope The distance of 5nm-20nm, the second metal layer and the 3rd metal interlevel is in 75nm-150nm, the 3rd metal level and the 4th The distance of metal interlevel is in 75nm-150nm and less than the second metal layer and the distance of the 3rd metal interlevel.

27. light-emitting component as claimed in claim 25, it is characterized in that, first scope is in 570nm-750nm, second scope More than first scope and be less than 1240nm, the 3rd scope is less than first scope and is more than 305nm, the second metal layer and The thickness of 3rd metal level is all in 5nm-20nm, and the second metal layer and the distance of the 3rd metal interlevel are in 150nm- The distance of 1000nm, the 3rd metal level and the 4th metal interlevel is in 30nm-75nm.

28. light-emitting component as claimed in claim 25, it is characterized in that, adjust thickness, the 3rd metal of the second metal layer The thickness of layer or the second metal layer and the distance of the 3rd metal interlevel can change the numerical value of second scope, and adjust and be somebody's turn to do Thickness, the thickness of the 4th metal level or the distance of the 3rd metal level and the 4th metal interlevel of 3rd metal level can change Become the numerical value of the 3rd scope.

29. light-emitting component as claimed in claim 25, it is characterized in that, the substrate or the first metal layer are as anode, and this Four metal levels are as negative electrode.

30. light-emitting component as claimed in claim 25, it is characterized in that, the first metal layer, the second metal layer, the 3rd gold medal Belonging to layer or the 4th metal level is made up of metal or nano-metal-oxide.

31. light-emitting component as claimed in claim 25, it is characterized in that, first organic material layer, second organic material layer, 3rd organic material layer each includes the mixed layer being made up of the hole mobile material and electron transport material mixing.

32. light-emitting component as claimed in claim 25, it is characterized in that, first organic material layer, second organic material layer, 3rd organic material layer each includes the hole transmission layer being made up of the hole mobile material and contact and is arranged at this The electron transfer layer formed on hole transmission layer and by the electron transport material.

33. a kind of light-emitting component, including multiple pixels, it is characterized in that, respectively the pixel includes：

Substrate, it has a surface；

The first metal layer, it is formed on the substrate；

Second metal layer, it is formed above the first metal layer；And

Organic material layer, it is formed between the first metal layer and the second metal layer and the hole transport including contacting with each other Material and electron transport material, and the hole mobile material can send peak value ripple with electron transport material interaction to produce The exciplex of the long light positioned at the first scope, and across the first metal layer and second metal of the organic material layer Layer produces the peak wavelength displacement that plasmon coupling causes the light,

Wherein, respectively the pixel for it is following one of them：

The surface is completely covered in the first metal layer, the thickness by adjusting the first metal layer is smaller or the first metal layer with Distance between the second metal layer is bigger, can make the peak wavelength of the light from first range displacement to the second scope, or Thickness by adjusting the first metal layer is bigger or distance between the first metal layer and the second metal layer is smaller, can make this The peak wavelength of light is from first range displacement to the 3rd scope；

The first metal layer has the metal portion on the covering part surface and the opening portion on the exposed remaining surface, should by adjustment The thickness of metal portion is smaller or distance between the metal portion and the second metal layer is bigger, can make the peak wavelength of the light from should The thickness of the metal portion is bigger or the metal portion and second metal to second scope, or by adjusting for first range displacement The distance of interlayer is smaller, can make the peak wavelength of the light from first range displacement to the 3rd scope；

The first metal layer has the first metal portion and the second metal portion for covering the surface, by adjusting first metal portion Thickness is smaller or distance between first metal portion and the second metal layer is bigger, can make the peak wavelength of the light from this first Range displacement is to second scope, and the thickness by adjusting second metal portion is bigger or second metal portion and second metal The distance of interlayer is smaller, can make the peak wavelength of the light from first range displacement to the 3rd scope；And

The first metal layer has the first metal portion, the second metal portion and is formed between first metal portion and the second metal portion The opening portion on the exposed parts surface, the thickness by adjusting first metal portion is smaller or first metal portion and second gold medal It is bigger to belong to the distance of interlayer, the peak wavelength of the light can be made from first range displacement to second scope, should by adjustment The thickness of second metal portion is bigger or distance between second metal portion and the second metal layer is smaller, can make the peak value of the light Wavelength is from first range displacement to the 3rd scope.

34. light-emitting component as claimed in claim 33, it is characterized in that, first scope is in 495nm-570nm, second scope In 570nm-750nm, the 3rd scope is in 380nm-495nm, the first metal layer, first metal portion and second metal portion Thickness adjusted between 5nm-20nm, between the first metal layer and the second metal layer, first metal portion and second gold medal Distance between category interlayer and second metal portion and the second metal layer adjusts between 75nm-150nm.

35. light-emitting component as claimed in claim 33, it is characterized in that, first scope is in 570nm-750nm, second scope More than first scope and it is less than 1240nm, the 3rd scope is less than first scope and is more than 305nm, first metal portion Thickness adjusts between 5nm-20nm and the distance between first metal portion and the second metal layer is between 150nm-1000nm Adjustment, the thickness of second metal portion is adjusted between 5nm-20nm and the distance between second metal portion and the second metal layer Adjusted between 30nm-75nm.

36. light-emitting component as claimed in claim 33, it is characterized in that, the organic material layer include by the hole mobile material and The mixed layer that electron transport material mixing is formed.

37. light-emitting component as claimed in claim 33, it is characterized in that, the organic material layer is included by the hole mobile material institute The hole transmission layer of composition and contact and the electronics for being arranged on the hole transmission layer and being made up of the electron transport material Transport layer.

38. light-emitting component as claimed in claim 33, it is characterized in that, the material of the substrate is glass, plastic cement or conducting metal Oxide.

39. light-emitting component as claimed in claim 33, it is characterized in that, the light-emitting component is passive-matrix Organic Light Emitting Diode Or active-matrix Organic Light Emitting Diode.