CN105826356B - Display panel with high aperture ratio and manufacturing method thereof - Google Patents
Display panel with high aperture ratio and manufacturing method thereof Download PDFInfo
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- CN105826356B CN105826356B CN201610287980.7A CN201610287980A CN105826356B CN 105826356 B CN105826356 B CN 105826356B CN 201610287980 A CN201610287980 A CN 201610287980A CN 105826356 B CN105826356 B CN 105826356B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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Abstract
The invention discloses a display panel with high aperture ratio and a manufacturing method thereof, wherein the method comprises the steps of manufacturing a convex structure in a pixel light emitting area of a substrate with a TFT array; depositing a reflective pixel electrode on the convex structure; manufacturing a pixel bank in the peripheral area of the adjacent reflection pixel electrode, and depositing a light-emitting layer and a transparent electrode on the reflection pixel electrode in sequence, wherein the light-emitting layer and the transparent electrode form a light-emitting element, and the light-emitting element and the convex surface structure have the same radian; and manufacturing a convex lens structure on the transparent electrode to obtain the display panel. According to the invention, the planar light-emitting element is made into a convex surface shape, and the convex lens structure is introduced into the light-emitting end of the light-emitting element, so that the emitted light emitted by the convex surface-shaped light-emitting element is refracted by the convex lens structure and then becomes parallel light, thereby increasing the aperture opening ratio of the pixel and further improving the display effect of the display panel.
Description
Technical Field
The invention relates to the technical field of displays, in particular to a display panel with a high aperture opening ratio and a manufacturing method thereof.
Background
In the contemporary information society, the importance of displays as a visual information transmission medium is further strengthened, and displays are being developed toward the trend of lighter, thinner, lower power consumption, lower cost, and better image quality in order to dominate in the future.
Organic Light Emitting Diodes (OLEDs) have a promising potential market in the industry due to their advantages of self-luminescence, fast response, wide viewing angle, high brightness, thinness, and the like. Quantum dot light emitting diodes (QLEDs) have recently become a strong competitor to OLEDs due to their advantages of high light color purity, high light emission quantum efficiency, easy color adjustment of light emission, and the like. Therefore, these two display technologies are two main directions of development in the display field at present.
Compared with the conventional liquid crystal display, the OLED and the QLED require a more complex driving circuit, and meanwhile due to factors such as evaporation and printing alignment, the aperture ratio of the light-emitting pixel unit with a planar structure is small, as shown in fig. 1, 1 is an opening region, the opening region 1 is small, generally less than 40%, and the display effect of the display panel is seriously affected.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, an object of the present invention is to provide a display panel with a high aperture ratio and a method for manufacturing the same, which aims to solve the problem that the display effect of the display panel is seriously affected due to the small aperture ratio of the conventional display panel.
The technical scheme of the invention is as follows:
a method for manufacturing a display panel with high aperture ratio comprises the following steps:
A. manufacturing a convex structure in a pixel light emitting area of a substrate with a TFT array;
B. depositing a reflective pixel electrode on the convex structure;
C. manufacturing a pixel bank in the peripheral area of the adjacent reflection pixel electrode, and depositing a light-emitting layer and a transparent electrode on the reflection pixel electrode in sequence, wherein the light-emitting layer and the transparent electrode form a light-emitting element, and the light-emitting element and the convex surface structure have the same radian;
D. and manufacturing a convex lens structure on the transparent electrode to obtain the display panel.
In the manufacturing method of the display panel with the high aperture ratio, in the step A, the TFT array is a silicon-based TFT array or a metal oxide TFT array.
In the manufacturing method of the display panel with the high aperture ratio, in the step A, the focal length of the convex structure is 0.1-0.5 mm.
In the step B, the radian and the focal length of the reflective pixel electrode and the convex structure are the same.
In the step B, the reflective pixel electrode is connected to the S/D electrode of the TFT array through the connection hole.
In the method for manufacturing a display panel with a high aperture ratio, in step B, the reflective pixel electrode is Al, Ag, Mo, or a stacked structure or an alloy thereof.
In the step C, the light-emitting layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, a hole blocking layer and an electron blocking layer.
In the manufacturing method of the display panel with the high aperture ratio, in the step C, the transparent electrode is a conductive metal oxide or a metal film.
In the step C, the light emitting element and the convex structure have the same focal length.
A display panel with high aperture ratio is manufactured by the manufacturing method of the display panel with high aperture ratio.
Has the advantages that: according to the invention, the planar light-emitting element is made into a convex surface shape, and the convex lens structure is introduced into the light-emitting end of the light-emitting element, so that the emitted light emitted by the convex surface-shaped light-emitting element is refracted by the convex lens structure and then becomes parallel light, thereby increasing the aperture opening ratio of the pixel and further improving the display effect of the display panel.
Drawings
Fig. 1 is a schematic cross-sectional view of a conventional display panel.
FIG. 2 is a flowchart illustrating a method for fabricating a display panel with a high aperture ratio according to a preferred embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view obtained after step S100 in fig. 2.
Fig. 4 is a schematic cross-sectional view obtained after step S200 in fig. 2.
Fig. 5 is a schematic cross-sectional view of the pixel bank fabricated in step S300 of fig. 2.
Fig. 6 is a schematic cross-sectional view of the light emitting layer and the transparent electrode deposited in step S300 of fig. 2.
Fig. 7 is a schematic cross-sectional view obtained after step S400 in fig. 2.
FIG. 8 is a schematic cross-sectional view of a display panel with a high aperture ratio according to a preferred embodiment of the invention.
Detailed Description
The present invention provides a display panel with a high aperture ratio and a method for manufacturing the same, and the present invention is further described in detail below to make the objects, technical solutions, and effects of the present invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 2, fig. 2 is a flowchart illustrating a method for manufacturing a display panel with a high aperture ratio according to a preferred embodiment of the present invention, as shown in the figure, the method includes the steps of:
s100, manufacturing a convex structure in a pixel light emitting area of a substrate with a TFT array;
s200, depositing a reflective pixel electrode on the convex structure;
s300, manufacturing a pixel bank in the peripheral area of the adjacent reflection pixel electrode, and depositing a light-emitting layer and a transparent electrode on the reflection pixel electrode in sequence, wherein the light-emitting layer and the transparent electrode form a light-emitting element, and the light-emitting element and the convex surface structure have the same radian;
s400, manufacturing a convex lens structure on the transparent electrode to obtain the display panel.
According to the invention, the planar light-emitting element is made into a convex surface shape, and the convex lens structure is introduced into the light-emitting end of the light-emitting element, so that the emitted light emitted by the convex surface-shaped light-emitting element is refracted by the convex lens structure and then becomes parallel light, thereby increasing the aperture opening ratio of the pixel and further improving the display effect of the display panel.
FIGS. 3 to 7 are schematic cross-sectional views obtained after the steps in FIG. 2. To explain the above steps in detail, step S100 is to fabricate the convex structure 3 in the pixel light emitting area of the substrate 2 with TFT array, as shown in fig. 3, of the substrate 2 with TFT array. Namely, the convex structures 3 are arranged on the substrate 2 with the TFT array and correspond to the pixel opening areas one by one, and the focal length of the convex structures 3 is 0.1-0.5 mm. The TFT array can drive light-emitting pixels, and can be a silicon-based TFT array or a metal oxide TFT array.
In step S200, as shown in fig. 4, the reflective pixel electrode 4 is deposited on the convex structure 3. I.e. the reflective pixel electrode 4 is arranged on the convex structure 3, the reflective pixel electrode 4 has the same radian and focal length as the convex structure 3. And the reflective pixel electrode 4 is connected to the S/D electrode of the TFT array through a connection hole. Preferably, the reflective pixel electrode 4 is a metal electrode with high electrical conductivity and high reflectivity, for example, the reflective pixel electrode 4 may be Al, Ag, Mo or their stacked structure or alloy. Wherein the thickness of the reflective pixel electrode 4 is preferably 30-100 nm.
In order to prevent the edge of the reflective pixel electrode 4 from short-circuiting during the process of manufacturing the device, the present invention additionally manufactures a pixel defining layer (pixel bank) covering the edge portion of the reflective pixel electrode 4. In step S300, as shown in fig. 5, a pixel bank5 is formed in the peripheral region of the reflective pixel electrode 4. A light-emitting layer 6 and a transparent electrode 7 are then deposited in sequence on the reflective pixel electrode 4, the light-emitting layer 6 and the transparent electrode 7 forming a light-emitting element having the same arc and focal length as the convex structure 3, as shown in fig. 6. Preferably, the light emitting layer 6 is one or more of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron blocking layer. Wherein, the light emitting layer can be an organic light emitting layer or a quantum dot light emitting layer or an organic/quantum dot hybrid light emitting layer. The transparent electrode 7 may be a conductive metal oxide (e.g., ITO, IZO, etc.) or a metal thin film (e.g., Al, Ag, etc.). Preferably, the thickness of the metal thin film is 5 to 20 nm.
In step S400, as shown in fig. 7, the convex lens structure 8 is fabricated on the transparent electrode 7, and the display panel is fabricated. The convex lens structure 8 is located the light-emitting side of light emitting component, with light emitting component one-to-one, convex lens structure 8 with the interval of convex surface light emitting component's central line is convex surface light emitting component's focus with the sum of convex lens structure's focus. And finally, packaging the manufactured whole structure to obtain the display panel. As shown in fig. 8, the display panel of the present invention includes, in order from the bottom up: a substrate 2, a convex structure 3, a reflective pixel electrode 4, a bank5, a light-emitting layer 6, a transparent electrode 7, and a convex lens structure 8. As can be seen from the figure, the improved opening region 10 of the present invention has a larger opening ratio than the original region 9, thereby improving the display effect of the display panel. In addition, the emitted light of the convex light-emitting element is parallel after being refracted by the convex lens structure, so that the light-emitting aperture ratio of the pixel is increased, and the display effect of the display panel is improved.
Based on the preparation method, the invention also provides a display panel with high aperture ratio, which is prepared by adopting the preparation method of the display panel with high aperture ratio. Due to the adoption of the aperture opening ratio increasing structure, the display panel has high aperture opening ratio, so that the display effect is improved.
In summary, according to the display panel with a high aperture ratio and the manufacturing method thereof provided by the present invention, the planar light emitting element is made into a convex shape, and the convex lens structure is introduced into the light emitting end of the light emitting element, so that the emitted light emitted by the convex light emitting element is refracted by the convex lens structure and then becomes parallel light, thereby increasing the aperture ratio of the pixel and further improving the display effect of the display panel.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A method for manufacturing a display panel with high aperture ratio is characterized by comprising the following steps:
A. manufacturing a convex structure in a pixel light emitting area of a substrate with a TFT array;
B. depositing a reflective pixel electrode on the convex structure;
C. manufacturing a pixel bank in the peripheral area of the adjacent reflection pixel electrode, and depositing a light-emitting layer and a transparent electrode on the reflection pixel electrode in sequence, wherein the light-emitting layer and the transparent electrode form a light-emitting element, and the light-emitting element and the convex surface structure have the same radian; the reflective pixel electrode and the convex structure have the same radian;
D. manufacturing a convex lens structure on the transparent electrode to manufacture a display panel;
the light emitted by the light-emitting element is parallel after being refracted by the convex lens structure.
2. The method according to claim 1, wherein in step a, the TFT array is a silicon-based TFT array or a metal oxide TFT array.
3. The method as claimed in claim 1, wherein in the step A, the focal length of the convex structure is 0.1-0.5 mm.
4. The method as claimed in claim 1, wherein in step B, the reflective pixel electrode and the convex structure have the same focal length.
5. The method according to claim 1, wherein in step B, the reflective pixel electrode is connected to the S/D electrode of the TFT array via a connection hole.
6. The method of claim 1, wherein in step B, the reflective pixel electrode is Al, Ag, Mo or their stack structure or alloy.
7. The method for manufacturing a display panel with a high aperture ratio according to claim 1, wherein in the step C, the light-emitting layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron blocking layer.
8. The method as claimed in claim 1, wherein in step C, the transparent electrode is a conductive metal oxide or a metal thin film.
9. The method as claimed in claim 1, wherein in step C, the light emitting device and the convex structure have the same focal length.
10. A display panel with high aperture ratio, characterized in that it is manufactured by the method for manufacturing a display panel with high aperture ratio as claimed in any one of claims 1 to 9.
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| CN109243305B (en) * | 2018-09-17 | 2021-10-12 | 京东方科技集团股份有限公司 | Display panel, display device, and method for manufacturing display panel |
| CN111668390B (en) | 2020-07-01 | 2023-04-11 | 合肥视涯技术有限公司 | Organic light-emitting display panel |
| CN111863860B (en) * | 2020-07-28 | 2022-12-02 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof, and display device |
| CN112349872A (en) * | 2020-11-05 | 2021-02-09 | 合肥京东方卓印科技有限公司 | Display screen packaging method, display screen and electronic equipment |
| CN115394814A (en) * | 2022-08-29 | 2022-11-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
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| CN104409020A (en) * | 2014-12-15 | 2015-03-11 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN104733632A (en) * | 2013-12-18 | 2015-06-24 | 昆山国显光电有限公司 | Organic light emitting display and manufacturing method thereof |
| CN105390528A (en) * | 2015-12-24 | 2016-03-09 | 昆山工研院新型平板显示技术中心有限公司 | Display device with high luminous aperture ratio and preparation method thereof |
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| JP4418525B2 (en) * | 2008-02-28 | 2010-02-17 | パナソニック株式会社 | Organic EL display panel |
| JP2012252836A (en) * | 2011-06-01 | 2012-12-20 | Canon Inc | Display device |
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| CN104733632A (en) * | 2013-12-18 | 2015-06-24 | 昆山国显光电有限公司 | Organic light emitting display and manufacturing method thereof |
| CN104409020A (en) * | 2014-12-15 | 2015-03-11 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN105390528A (en) * | 2015-12-24 | 2016-03-09 | 昆山工研院新型平板显示技术中心有限公司 | Display device with high luminous aperture ratio and preparation method thereof |
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