CN105826241A - Wafer structure manufacturing method and wafer structure - Google Patents
Wafer structure manufacturing method and wafer structure Download PDFInfo
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- CN105826241A CN105826241A CN201510007310.0A CN201510007310A CN105826241A CN 105826241 A CN105826241 A CN 105826241A CN 201510007310 A CN201510007310 A CN 201510007310A CN 105826241 A CN105826241 A CN 105826241A
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Abstract
The invention discloses a wafer structure manufacturing method and a wafer structure. The manufacturing method comprises the following steps: a wafer is provided, wherein the wafer comprises an edge area and a middle area; a metal barrier layer and a negative photoresist layer covering the surface of the wafer are sequentially formed; photoetching is carried out on the negative photoresist layer, etching is carried out on the metal barrier layer, the negative photoresist layer and the metal barrier layer located in the edge area are kept, and an opening is formed in the negative photoresist layer and the metal barrier layer located in the middle area; and a metallide is formed in the wafer in the opening. According to the manufacturing method of the invention, the metallide can be prevented from forming at the wafer edge, peeling of a BEOL device layer caused by poor cohesion between the metallide and the BEOL device layer is further reduced, the manufacturing method only needs to change the photoetching process, and thus, the existing manufacturing method can be improved conveniently.
Description
Technical field
The application relates to the technical field of semiconductor integrated circuit, in particular to manufacture method and the crystal circle structure of a kind of crystal circle structure.
Background technology
In the manufacturing process of integrated circuit, it usually needs forming various device on wafer to form crystal circle structure, then cutting crystal wafer is to form chip, finally is packaged making semiconductor product to chip.Wherein, the making of crystal circle structure generally includes FEOL and back-end process.FEOL refers to the processing procedure on wafer before formation interconnection layer, such as, form the process such as transistor, isolation structure.BEOL refers to be formed the processing procedure of interconnection layer on wafer, such as, form the process such as interconnecting metal layer, passivation layer.
The manufacture method of existing crystal circle structure generally includes following steps: first, sequentially forms metal barrier and the positive photoresist layer covering crystal column surface；Then, the positive photoresist layer using photomask to be pointed in the middle of wafer is exposed；It follows that the positive photoresist layer being pointed to crystal round fringes is exposed；It follows that develop the positive photoresist layer after exposure, the positive photoresist layer being positioned at crystal round fringes after this step process can be removed, and be positioned in the positive photoresist layer in the middle of wafer and can form pattern；It follows that with the positive photoresist layer after development for mask etching metal barrier, the metal barrier being positioned at crystal round fringes after this step process can be removed, and it is positioned in the metal barrier in the middle of wafer and can form multiple opening；Finally, being formed and cover the metal level of crystal column surface and perform Technology for Heating Processing, after this step process, crystal round fringes can form metal compound with the position corresponding with above-mentioned opening in the middle of wafer.
In the manufacturing process of above-mentioned crystal circle structure, the etching process of metal barrier is included WEE step, this WEE step can cause the positive photoresist layer of crystal round fringes to be exposed, and then causes the metal barrier of crystal round fringes to be removed, and forms metal compound on crystal round fringes.But, the cohesive force between the device layer that metal compound and BEOL processing procedure are formed is poor, causes the BEOL device layer on crystal round fringes to be susceptible to peel off, and then causes crystal circle structure to lose efficacy.Even if not carrying out WEE step, the metal barrier on crystal round fringes the most also can be removed, and causes being formed on crystal round fringes metal compound, and then causes the BEOL device layer on crystal round fringes to be susceptible to peel off.For the problems referred to above, there is presently no effective solution.
Summary of the invention
The application aims to provide manufacture method and the crystal circle structure of a kind of crystal circle structure, and to avoid being formed metal compound on crystal round fringes, and then it is peeling-off to reduce the BEOL device layer caused due to the cohesive force difference between metal compound and BEOL device layer.
To achieve these goals, this application provides the manufacture method of a kind of crystal circle structure, this manufacture method comprises the following steps: providing wafer, wafer includes marginal zone and mesozone；Sequentially form metal barrier and the negative photo glue-line covering crystal column surface；Negative photo glue-line carried out photoetching and metal barrier is performed etching, to retain the negative photo glue-line and metal barrier being positioned on marginal zone, and in the negative photo glue-line being positioned on mesozone and metal barrier, forming opening；Wafer in the opening is formed metal compound.
Further, negative photo glue-line is carried out photoetching and the step that performs etching metal barrier includes: negative photo glue-line is carried out photoetching, the negative photo glue-line being positioned on marginal zone with reservation, and form pre-opening in the negative photo glue-line being positioned on mesozone；Along pre-opening etching metal barrier to exposing the surface of wafer, to form opening.
Further, the step that negative photo glue-line carries out photoetching includes: the negative photo glue-line being pointed on marginal zone is exposed, and the negative photo glue-line using photomask to be pointed on mesozone is exposed, and the light tight district in photomask is corresponding with the position being intended to be formed pre-opening；Negative photo glue-line after exposure is developed, the negative photo glue-line being positioned on marginal zone with reservation, and form pre-opening in the negative photo glue-line being positioned on mesozone.
Further, carrying out negative photo glue-line in the step of photoetching, the negative photo glue-line being first pointed on marginal zone is exposed, and the negative photo glue-line using photomask to be pointed on mesozone the most again is exposed；Or the negative photo glue-line first using photomask to be pointed on mesozone is exposed, the negative photo glue-line being pointed to the most again on marginal zone is exposed.
Further, the width of marginal zone is less than 3.5mm.
Further, the width of marginal zone is 2.5～3.5mm.
Further, the step forming metal compound includes: form the metal level of the crystal column surface covered in opening；Perform Technology for Heating Processing, so that metal level and wafer reaction form metal compound；Remove negative photo glue-line.
Further, wafer is silicon chip, and metal compound is metal silicide.
Further, the material of metal barrier is SiO2 or SiN, and the material of metal compound is CoSi, TiSi or NiSi.
Further, after forming metal compound, manufacture method is additionally included in the step forming interconnecting metal layer in metal compound.
Present invention also provides a kind of crystal circle structure, the above-mentioned manufacture method that this crystal circle structure is provided by the application is made.
The technical scheme of application the application, by sequentially forming the metal barrier and negative photo glue-line covering crystal column surface, then negative photo glue-line is carried out photoetching and metal barrier is performed etching, to retain the negative photo glue-line and metal barrier being positioned on marginal zone, and in the negative photo glue-line being positioned on mesozone and metal barrier, form opening, wafer the most in the opening is formed metal compound.This manufacture method is it can be avoided that form metal compound on crystal round fringes, and then it is peeling-off to reduce the BEOL device layer caused due to the cohesive force difference between metal compound and BEOL device layer.Meanwhile, this manufacture method only needs to change the technical process of photoetching, consequently facilitating improve existing manufacture method.
Accompanying drawing explanation
The Figure of description of the part constituting the application is used for providing further understanding of the present application, and the schematic description and description of the application is used for explaining the application, is not intended that the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows the schematic flow sheet of the manufacture method of the crystal circle structure that the application preferred implementation provided；
Fig. 2 shows in the manufacture method of the crystal circle structure provided in the application preferred implementation, it is provided that include the cross-sectional view of the matrix after the wafer of marginal zone and mesozone；
Fig. 3 shows the cross-sectional view sequentially forming the matrix after covering the metal barrier of crystal column surface and negative photo glue-line；
Fig. 4 shows and negative photo glue-line is carried out photoetching, with the negative photo glue-line that is positioned on marginal zone of reservation, and the cross-sectional view of the matrix after forming pre-opening in the negative photo glue-line being positioned on mesozone；
Fig. 5 shows along pre-opening etching metal barrier to the surface exposing wafer, to retain the negative photo glue-line and metal barrier being positioned on marginal zone, and in the negative photo glue-line being positioned on mesozone and metal barrier, form the cross-sectional view of the matrix after opening；And
Fig. 6 shows the cross-sectional view of the matrix after forming metal compound in wafer in the opening.
Detailed description of the invention
It should be noted that in the case of not conflicting, the embodiment in the application and the feature in embodiment can be mutually combined.Describe the application below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
It should be noted that term used herein above merely to describe detailed description of the invention, and be not intended to the restricted root illustrative embodiments according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to include plural form, in addition, it is to be further understood that, when using term " to comprise " in this manual and/or time " including ", it indicates existing characteristics, step, operation, device, assembly and/or combinations thereof.
For the ease of describing, here can use space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for describing such as a device shown in the figure or feature and other devices or the spatial relation of feature.It should be appreciated that space relative terms is intended to comprise the different azimuth in use or operation in addition to the orientation that device is described in the drawings.Such as, " below other devices or structure " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can include " in ... top " and " in ... lower section " two kinds of orientation.This device can also other different modes location, and space used herein above described relatively make respective explanations.
As described in background technology, the manufacture method of existing crystal circle structure can form metal compound on crystal round fringes, and the cohesive force between metal compound and BEOL device layer is poor, and then causes the BEOL device layer on crystal round fringes to be susceptible to peel off.Present inventor studies for the problems referred to above, thus provides the manufacture method of a kind of crystal circle structure.As it is shown in figure 1, this manufacture method comprises the following steps: providing wafer, wafer includes marginal zone and mesozone；Sequentially form metal barrier and the negative photo glue-line covering crystal column surface；Negative photo glue-line carried out photoetching and metal barrier is performed etching, to retain the negative photo glue-line and metal barrier being positioned on marginal zone, and in the negative photo glue-line being positioned on mesozone and metal barrier, forming opening；Wafer in the opening is formed metal compound.
Above-mentioned manufacture method is by sequentially forming the metal barrier and negative photo glue-line covering crystal column surface, then negative photo glue-line is carried out photoetching and metal barrier is performed etching, to retain the negative photo glue-line and metal barrier being positioned on marginal zone, and in the negative photo glue-line being positioned on mesozone and metal barrier, form opening, wafer the most in the opening is formed metal compound.This manufacture method is it can be avoided that form metal compound on crystal round fringes, and then it is peeling-off to reduce the BEOL device layer caused due to the cohesive force difference between metal compound and BEOL device layer.Meanwhile, this manufacture method only needs to change the technical process of photoetching, consequently facilitating improve existing manufacture method.
The illustrative embodiments of manufacture method of the crystal circle structure provided according to the application is provided.But, these illustrative embodiments can be implemented by multiple different form, and should not be construed to be limited solely to embodiments set forth herein.Should be understood that, these embodiments are provided so that disclosure herein is thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expand the thickness in layer and region, and make to be presented with like reference characters identical device, thus description of them will be omitted.
Fig. 2 to Fig. 6 shows in the manufacture method of the semiconductor device that the application provides, the cross-sectional view of the matrix obtained after each step.Below in conjunction with Fig. 2 to Fig. 6, further illustrate the manufacture method of semiconductor device provided herein.
First, it is provided that including the wafer 10 of marginal zone 11 and mesozone 13, its structure is as shown in Figure 2.Wherein, wafer 10 can use silicon wafer commonly used in the prior art, and the size of wafer 10 can be 200mm or 300mm etc..Meanwhile, those skilled in the art can be according to being intended on wafer 10 edge be formed the width of the width setup marginal zone 11 of metal compound 50.In concrete production technology, the width of marginal zone 11 is generally less than 3.5mm, is more preferably 2.5～3.5mm.It should be noted that, during actual process marginal zone 11 and mesozone 13 follow-up negative photo glue-line 30 is carried out WEE after formed, wafer 10 is divided into the purpose of marginal zone 11 and mesozone 13 be easy for describing the technical scheme that the application provides in this step.
After completing to provide the step of the wafer 10 including marginal zone 11 and mesozone 13, sequentially form metal barrier 20 and the negative photo glue-line 30 covering wafer 10 surface, and then form basal body structure as shown in Figure 3.Wherein, the material of metal barrier 20 can be barrier material commonly used in the art, such as SiO2 or SiN etc., and the technique forming metal barrier 20 can be chemical gaseous phase deposition or sputtering etc..
In this step, conventional negative photoresist is to link reinforcement based on main chain and the sagging cross between chain to make the insoluble principle of glue after exposure.At present, most popular negative photoresist is b-rubber impedance agent, and its main base is cyclisation many body rubbers base.After exposure, the photosensitizer in negative photoresist is lost nitrogen and produces nitric acid after photolysis, and nitric acid immediately engages in the series reaction of the cross link strengthening resin, thus after exposure, negative photoresist is soluble.
After completing the step of the metal barrier 20 and negative photo glue-line 30 sequentially forming covering wafer 10 surface, negative photo glue-line 30 is carried out photoetching and metal barrier 20 is performed etching, to retain the negative photo glue-line 30 and metal barrier 20 being positioned on marginal zone 11, and in the negative photo glue-line 30 being positioned on mesozone 13 and metal barrier 20, form opening 40.After this step, the metal barrier 20 on marginal zone 11 is retained, and then avoids being formed on wafer 10 edge metal compound 50 in subsequent step.
In this step, one preferred embodiment comprises the following steps: negative photo glue-line 30 is carried out photoetching, the negative photo glue-line 30 being positioned on marginal zone 11 with reservation, and in the negative photo glue-line 30 being positioned on mesozone 13, form pre-opening 40, and then form basal body structure as shown in Figure 4；Metal barrier 20 is etched to the surface exposing wafer 10 along pre-opening 40, to retain the negative photo glue-line 30 and metal barrier 20 being positioned on marginal zone 11, and in the negative photo glue-line 30 being positioned on mesozone 13 and metal barrier 20, form opening 40, and then form basal body structure as shown in Figure 5.
Specifically, the step that negative photo glue-line 30 is carried out photoetching includes: the negative photo glue-line 30 being pointed on marginal zone 11 is exposed, and the negative photo glue-line 30 using photomask to be pointed on mesozone 13 is exposed, and the light tight district in photomask is corresponding with the position being intended to be formed pre-opening 40；Negative photo glue-line 30 after exposure is developed, the negative photo glue-line 30 being positioned on marginal zone 11 with reservation, and in the negative photo glue-line 30 being positioned on mesozone 13, form pre-opening 40.
In the above-mentioned step being exposed negative photo glue-line 30, the negative photo glue-line 30 that can first be pointed on marginal zone 11 is exposed, and the negative photo glue-line 30 using photomask to be pointed on mesozone 13 the most again is exposed；The negative photo glue-line 30 that can also first use photomask to be pointed on mesozone 13 is exposed, and the negative photo glue-line 30 being pointed to the most again on marginal zone 11 is exposed.Wherein, the process being exposed the negative photo glue-line 30 on marginal zone 11 can use WEE step, will be irradiated on the marginal zone 11 of wafer 10 and rotate wafer 10 by exposure light source, so that the negative photo glue-line 30 on wafer 10 edge is exposed.During the negative photo glue-line 30 using photomask to be pointed on mesozone 13 is exposed, the light tight district in photomask is corresponding with the position being intended to be formed pre-opening 40, will form exposure figure by the negative photo glue-line 30 on mesozone 13 after exposure.The concrete technology parameter of above-mentioned exposure is referred to prior art, does not repeats them here.
After negative photo glue-line 30 is exposed, the negative photo glue-line 30 after exposure is developed.The method of development includes the development of whole box silicon chip immersion, continuous spray development and the development of puddle formula.Wherein, continuous spray development refer to use one or more nozzles spray developer solution at silicon chip surface, silicon chip low speed rotation simultaneously；Formula development in puddle refers to spray enough developer solutions to silicon chip surface, and forms puddle shape.The developer solution that negative photoresist is conventional is dimethylbenzene, and cleanout fluid is ethyl acetate or ethanol, trichloro ethylene.
Complete negative photo glue-line 30 carries out photoetching and metal barrier 20 is performed etching, to retain the negative photo glue-line 30 and metal barrier 20 being positioned on marginal zone 11, and after forming the step of opening 40 in the negative photo glue-line 30 being positioned on mesozone 13 and metal barrier 20, wafer 10 in opening 40 is formed metal compound 50, and then forms basal body structure as shown in Figure 6.Preferably, the step forming metal compound 50 includes: form the metal level on wafer 10 surface covered in opening 40；Perform Technology for Heating Processing, so that metal level and wafer 10 reaction form metal compound 50；Remove negative photo glue-line 30, it is thus achieved that basal body structure as shown in Figure 6.
The material of above-mentioned metal level can be Co, Ti or Ni etc., and the technique forming metal level can be sputtering.The technological parameter of Technology for Heating Processing can be set according to the material of used metal level, and its concrete technological parameter is referred to prior art.Above-mentioned technique is state of the art, does not repeats them here.When wafer 10 is silicon chip, above-mentioned metal level forms metal silicide, such as CoSi, TiSi or NiSi etc. with wafer 10 reaction.
After forming metal compound 50, the manufacture method that the application provides is additionally included in the step forming interconnecting metal layer in metal compound 50.Interconnecting metal layer can be Cu or Al etc., and the technique forming interconnecting metal layer is referred to prior art.Certainly, the manufacture method that the application provides is additionally included between interconnecting metal layer formation connected medium layer, and forms passivation layer and the step of pad on top layer metallic layer.
Present invention also provides a kind of crystal circle structure.The above-mentioned manufacture method that this crystal circle structure is provided by the application is made.This crystal circle structure is formed without on crystal round fringes metal compound, and then it is peeling-off to decrease the BEOL device layer on crystal round fringes.
As can be seen from the above description, the application the above embodiments achieve following technique effect:
The manufacture method that the application provides is by sequentially forming the metal barrier and negative photo glue-line covering crystal column surface, then negative photo glue-line is carried out photoetching and metal barrier is performed etching, to retain the negative photo glue-line and metal barrier being positioned on marginal zone, and in the negative photo glue-line being positioned on mesozone and metal barrier, form opening, wafer the most in the opening is formed metal compound.This manufacture method is it can be avoided that form metal compound on crystal round fringes, and then it is peeling-off to reduce the BEOL device layer caused due to the cohesive force difference between metal compound and BEOL device layer.
This manufacture method only needs to change the technical process of photoetching, consequently facilitating improve existing manufacture method.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.All within spirit herein and principle, any modification, equivalent substitution and improvement etc. made, within should be included in the protection domain of the application.
Claims (11)
1. the manufacture method of a crystal circle structure, it is characterised in that described manufacture method comprises the following steps:
Thering is provided wafer, described wafer includes marginal zone and mesozone；
Sequentially form metal barrier and the negative photo glue-line covering described crystal column surface；
Described negative photo glue-line is carried out photoetching and described metal barrier is performed etching, to retain the described negative photo glue-line and described metal barrier being positioned on described marginal zone, and in the described negative photo glue-line being positioned on described mesozone and described metal barrier, form opening；
Described wafer in said opening is formed metal compound.
Manufacture method the most according to claim 1, it is characterised in that described negative photo glue-line is carried out photoetching and the step that performs etching described metal barrier includes:
Described negative photo glue-line is carried out photoetching, the described negative photo glue-line being positioned on described marginal zone with reservation, and form pre-opening in the described negative photo glue-line being positioned on described mesozone；
Described metal barrier is etched to exposing the surface of described wafer, to form described opening along described pre-opening.
Manufacture method the most according to claim 2, it is characterised in that the step that described negative photo glue-line is carried out photoetching includes:
The described negative photo glue-line being pointed on described marginal zone is exposed, and the described negative photo glue-line using photomask to be pointed on described mesozone is exposed, and the light tight district in described photomask is corresponding with the position being intended to be formed described pre-opening；
Described negative photo glue-line after exposure is developed, the described negative photo glue-line being positioned on described marginal zone with reservation, and form described pre-opening in the described negative photo glue-line being positioned on described mesozone.
Manufacture method the most according to claim 3, it is characterised in that described negative photo glue-line is carried out in the step of photoetching,
The described negative photo glue-line being first pointed on described marginal zone is exposed, and the described negative photo glue-line using photomask to be pointed on described mesozone the most again is exposed；Or
The described negative photo glue-line first using photomask to be pointed on described mesozone is exposed, and the described negative photo glue-line being pointed to the most again on described marginal zone is exposed.
Manufacture method the most according to any one of claim 1 to 4, it is characterised in that the width of described marginal zone is less than 3.5mm.
Manufacture method the most according to claim 5, it is characterised in that the width of described marginal zone is 2.5～3.5mm.
Manufacture method the most according to any one of claim 1 to 4, the step forming metal compound includes:
Form the metal level of the crystal column surface covered in described opening；
Perform Technology for Heating Processing, so that described metal level and the reaction of described wafer form described metal compound；
Remove described negative photo glue-line.
Manufacture method the most according to claim 7, it is characterised in that described wafer is silicon chip, described metal compound is metal silicide.
Manufacture method the most according to claim 8, it is characterised in that the material of described metal barrier is SiO2Or SiN, the material of described metal compound is CoSi, TiSi or NiSi.
Manufacture method the most according to claim 7, it is characterised in that after forming described metal compound, described manufacture method is additionally included in the step forming interconnecting metal layer in described metal compound.
11. 1 kinds of crystal circle structures, it is characterised in that described crystal circle structure is made by the manufacture method according to any one of claim 1 to 10.
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Application publication date: 20160803 |