CN105802506B - Chemical mechanical polishing solution - Google Patents
Chemical mechanical polishing solution Download PDFInfo
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- CN105802506B CN105802506B CN201410840093.9A CN201410840093A CN105802506B CN 105802506 B CN105802506 B CN 105802506B CN 201410840093 A CN201410840093 A CN 201410840093A CN 105802506 B CN105802506 B CN 105802506B
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- polishing solution
- chemical mechanical
- mechanical polishing
- cyclodextrin
- chemical
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- 238000005498 polishing Methods 0.000 title claims abstract description 46
- 239000000126 substance Substances 0.000 title claims abstract description 29
- 239000002245 particle Substances 0.000 claims abstract description 11
- 239000000654 additive Substances 0.000 claims abstract description 8
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 229920000858 Cyclodextrin Polymers 0.000 claims description 6
- 229910000160 potassium phosphate Inorganic materials 0.000 claims description 4
- 235000011009 potassium phosphates Nutrition 0.000 claims description 4
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical class O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001116 FEMA 4028 Substances 0.000 claims description 3
- WHGYBXFWUBPSRW-FOUAGVGXSA-N beta-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO WHGYBXFWUBPSRW-FOUAGVGXSA-N 0.000 claims description 3
- 235000011175 beta-cyclodextrine Nutrition 0.000 claims description 3
- 229960004853 betadex Drugs 0.000 claims description 3
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims description 3
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 3
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 3
- 229920001450 Alpha-Cyclodextrin Polymers 0.000 claims description 2
- HFHDHCJBZVLPGP-RWMJIURBSA-N alpha-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO HFHDHCJBZVLPGP-RWMJIURBSA-N 0.000 claims description 2
- 229940043377 alpha-cyclodextrin Drugs 0.000 claims description 2
- GDSRMADSINPKSL-HSEONFRVSA-N gamma-cyclodextrin Chemical class OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO GDSRMADSINPKSL-HSEONFRVSA-N 0.000 claims description 2
- OQZCJRJRGMMSGK-UHFFFAOYSA-M potassium metaphosphate Chemical compound [K+].[O-]P(=O)=O OQZCJRJRGMMSGK-UHFFFAOYSA-M 0.000 claims description 2
- 229940099402 potassium metaphosphate Drugs 0.000 claims description 2
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 claims description 2
- 229910000396 dipotassium phosphate Inorganic materials 0.000 claims 1
- 235000019797 dipotassium phosphate Nutrition 0.000 claims 1
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 9
- 230000002378 acidificating effect Effects 0.000 abstract description 3
- 230000007935 neutral effect Effects 0.000 abstract description 3
- 239000007800 oxidant agent Substances 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 239000003899 bactericide agent Substances 0.000 description 1
- -1 cyclodextrin compound Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229940080345 gamma-cyclodextrin Drugs 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to a chemical mechanical polishing solution, which contains cerium dioxide abrasive particles, one or more chemical additives and water, the polishing solution does not contain a chemical oxidant, the addition amount of the abrasive particles is very low, the polishing solution can keep a higher removal rate on silicon oxide under acidic, neutral and alkaline conditions, meanwhile, the polishing solution has a lower removal rate on silicon nitride, the content of different chemical additives is adjusted, the silicon oxide-silicon nitride has a higher selection ratio, and the polishing solution has a certain prospect in application.
Description
Technical Field
The invention relates to a chemical mechanical polishing solution, in particular to a cerium oxide chemical mechanical polishing solution with high selectivity ratio for polishing silicon oxide.
Background
The use of wiring interconnection technology in integrated circuits results in irregular surface topography formed by the layer-by-layer deposition of thin film materials, and thus the surface needs to be planarized to form a regular and flat surface topography in the next Chemical Mechanical Polishing (CMP) process, which facilitates the subsequent cutting and packaging of devices. In a typical CMP process, a substrate is brought into contact with a polishing pad, a pressure is applied to the back surface of the substrate, and during the polishing process, the pad and the platen are rotated, a thin film on the surface of the substrate is brought into contact with an abrasive slurry containing an abrasive, and the polishing slurry chemically reacts with the thin film to start the polishing process.
In the past common inventions or literature reports, cerium oxide research is concentrated on polishing silicon dioxide, and the silicon oxide and the silicon nitride both have higher removal rates, so that the selectivity ratio of the silicon oxide to the silicon nitride is not high. In the invention, a cerium oxide chemical mechanical polishing solution which is used for adjusting the selectivity ratio of silicon dioxide to silicon nitride, keeps a high selectivity ratio, can be suitable for a range from weak acidity to alkalinity, can be used for the field of Shallow Trench Isolation (Shalow Trench Isolation) polishing and has a good application prospect.
Disclosure of Invention
The invention aims to provide a chemical mechanical polishing solution for polishing a silicon oxide film well under acidic, neutral and alkaline conditions, and the chemical mechanical polishing solution keeps a high selection ratio to silicon nitride.
The above object of the present invention is achieved by the following technical solutions: the polishing solution comprises cerium oxide abrasive particles and water, and further comprises one or more chemical additives.
The chemical additive of the present invention may be one or more phosphorus-containing compounds.
The chemical additive of the present invention may also be one or more cyclodextrin-type compounds.
Preferably, the phosphorus-containing compound is a phosphate salt, which may comprise one or more of potassium phosphate, potassium dihydrogen phosphate, dipotassium hydrogen phosphate, potassium pyrophosphate, potassium metaphosphate.
Preferably, the cyclodextrin-containing compound may comprise α -cyclodextrin, β -cyclodextrin, γ -cyclodextrin and derivatives thereof.
The phosphorus-containing compound of the present invention is preferably potassium phosphate and/or potassium dihydrogen phosphate and/or dipotassium hydrogen phosphate.
The particle size of the cerium dioxide abrasive particles is 150-300 nanometers.
The concentration of the cerium dioxide abrasive particles is 0.1-2% by weight.
The weight percentage concentration of the phosphorus-containing compound is 0.04-0.5% or respectively.
The weight percentage concentration of the cyclodextrin compound is 0.1-2% or respectively.
The chemical mechanical polishing solution of the invention contains water as the rest.
The pH value of the polishing solution is 5-11.
The polishing solution of the present invention may further contain a pH adjuster, a viscosity adjuster, a bactericide, and the like to achieve the inventive effects of the present invention.
The chemical mechanical polishing solution can be prepared by the following method: mixing the above chemical components at a certain proportion, and adding pH regulator (such as KOH or HNO)3) Adjusting to the required pH value, and mixing uniformly before use.
The reagents and starting materials used in the present invention are commercially available.
The invention has the remarkable advantages that: the polishing solution does not contain a chemical oxidizing agent, has low addition amount of grinding particles, can keep higher removal rate on silicon oxide under acidic, neutral or alkaline conditions, has lower removal rate on silicon nitride, adjusts different chemical additive contents, can achieve higher selection ratio of silicon oxide to silicon nitride, and has a certain application prospect.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention.
The chemical mechanical polishing solution can be prepared by the following method: mixing the above chemical components at a certain proportion, and adding pH regulator (such as KOH or HNO)3) Adjusting to the required pH value, and mixing uniformly before use.
The reagents and starting materials used in the present invention are commercially available. In the examples, the percentages of the components are by mass.
The formulations of the polishing solutions of the present invention in the examples and the comparative examples are shown in table 1, and the polishing solutions of the examples can be obtained by uniformly mixing the components and the contents thereof given in the table, with the balance being water.
Table 1 shows the formulations of examples of the present invention and comparative examples
Effects of the embodiment
The polishing solutions of comparative examples 1 to 2 and the polishing solutions of some examples of the present invention were used for polishing, and the removal rates are shown in Table 2.
Polishing materials: a silicon oxide film wafer of a silicon substrate, a silicon nitride film wafer of the silicon substrate;
the technological parameters during polishing are as follows: down force 3psi, polishing disk (14 inch diameter) rotation 70rpm, polishing head rotation 80rpm, slurry flow 150mL/min, Logitech polishing pad, Logitech LP50 polisher.
TABLE 2
The polishing solution of the present invention and the comparative polishing solution 1 show that the addition of potassium phosphate and β -cyclodextrin can significantly improve the removal rate of silicon dioxide and inhibit the removal rate of silicon nitride, respectively, thereby significantly improving the selectivity ratio of the two, and compared with the comparative polishing solution 2 in which silicon oxide is used as an abrasive, the polishing solution of the present invention has significant technical advantages in terms of polishing effect.
It should be understood that wt% in the present invention refers to mass percentage.
The embodiments of the present invention have been described in detail, but the embodiments are merely examples, and the present invention is not limited to the embodiments described above. Any equivalent modifications and substitutions to those skilled in the art are also within the scope of the present invention. Accordingly, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be covered by the present invention.
Claims (4)
1. The chemical mechanical polishing solution is characterized by comprising cerium dioxide abrasive particles, one or more chemical additives and water, wherein the chemical additives are phosphorus-containing compounds and/or cyclodextrin compounds, the phosphorus-containing compounds are one or more of potassium phosphate, monopotassium phosphate, dipotassium phosphate, potassium pyrophosphate and potassium metaphosphate, the cyclodextrin compounds are α -cyclodextrin, β -cyclodextrin, gamma-cyclodextrin compounds and derivatives thereof, the concentration of the phosphorus-containing compounds is 0.04-0.5% by mass, and the concentration of the cyclodextrin compounds is 0.01-2% by mass.
2. The chemical mechanical polishing solution according to claim 1, wherein the ceria abrasive particles have a particle size of 150 to 300 nm.
3. The chemical mechanical polishing solution according to claim 1, wherein the concentration of the ceria abrasive particles is 0.1 to 2% by mass.
4. The chemical mechanical polishing solution according to claim 1, wherein the pH of the chemical mechanical polishing solution is 5 to 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410840093.9A CN105802506B (en) | 2014-12-29 | 2014-12-29 | Chemical mechanical polishing solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410840093.9A CN105802506B (en) | 2014-12-29 | 2014-12-29 | Chemical mechanical polishing solution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105802506A CN105802506A (en) | 2016-07-27 |
| CN105802506B true CN105802506B (en) | 2020-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410840093.9A Active CN105802506B (en) | 2014-12-29 | 2014-12-29 | Chemical mechanical polishing solution |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2018062403A1 (en) * | 2016-09-29 | 2019-07-11 | 花王株式会社 | Polishing liquid composition |
| CN109251679A (en) * | 2017-07-13 | 2019-01-22 | 安集微电子科技（上海）股份有限公司 | A kind of chemical mechanical polishing liquid |
| CN109251678A (en) * | 2017-07-13 | 2019-01-22 | 安集微电子科技（上海）股份有限公司 | A kind of chemical mechanical polishing liquid |
| CN109251672B (en) * | 2017-07-13 | 2022-02-18 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution |
| CN111378371B (en) * | 2018-12-28 | 2022-05-13 | 安集微电子科技（上海）股份有限公司 | Application of pyrogallic acid in polishing of silicon dioxide |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1475540A (en) * | 2002-08-16 | 2004-02-18 | ���ǵ�����ʽ���� | Chemical/mechanical polishing paste and chemical mechanical polishing method using said paste |
| CN102473621A (en) * | 2009-12-10 | 2012-05-23 | 日立化成工业株式会社 | CMP polishing liquid, substrate polishing method, and electronic component |
| CN102666760A (en) * | 2009-11-11 | 2012-09-12 | 可乐丽股份有限公司 | Slurry for chemical mechanical polishing and polishing method for substrate using same |
| CN103666276A (en) * | 2012-09-25 | 2014-03-26 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| CN103975001A (en) * | 2011-12-21 | 2014-08-06 | 巴斯夫欧洲公司 | Method for manufacturing cmp composition and application thereof |
-
2014
- 2014-12-29 CN CN201410840093.9A patent/CN105802506B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1475540A (en) * | 2002-08-16 | 2004-02-18 | ���ǵ�����ʽ���� | Chemical/mechanical polishing paste and chemical mechanical polishing method using said paste |
| CN102666760A (en) * | 2009-11-11 | 2012-09-12 | 可乐丽股份有限公司 | Slurry for chemical mechanical polishing and polishing method for substrate using same |
| CN102473621A (en) * | 2009-12-10 | 2012-05-23 | 日立化成工业株式会社 | CMP polishing liquid, substrate polishing method, and electronic component |
| CN103975001A (en) * | 2011-12-21 | 2014-08-06 | 巴斯夫欧洲公司 | Method for manufacturing cmp composition and application thereof |
| CN103666276A (en) * | 2012-09-25 | 2014-03-26 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
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| CN105802506A (en) | 2016-07-27 |
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