CN105790585A - Thermoelectric direct current voltage stabilizer - Google Patents
Thermoelectric direct current voltage stabilizer Download PDFInfo
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- CN105790585A CN105790585A CN201410812712.3A CN201410812712A CN105790585A CN 105790585 A CN105790585 A CN 105790585A CN 201410812712 A CN201410812712 A CN 201410812712A CN 105790585 A CN105790585 A CN 105790585A
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- electric arm
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Abstract
The invention discloses a thermoelectric direct current voltage stabilizer. The voltage stabilizer comprises a primary loop and a secondary loop, wherein the primary loop is connected with a power supply; the primary loop comprises heating elements and a switching component with a controllable duty ratio; the switching component is electrically connected with the corresponding heating elements; the switching component controls the thermal power of the corresponding heating elements; the secondary loop comprises one or more semiconductor electric arms; the corresponding semiconductor electric arms are connected with the corresponding heating elements in an insulation and thermal conduction manner; each corresponding semiconductor electric arm is provided with at least one section of intentional non-uniform doping section to form non-uniform semiconductor attribute distribution; and the intentional non-uniform doping section of each corresponding semiconductor electric arm absorbs heat, converts the heat into electric energy, and outputs the electric energy. The thermoelectric direct current voltage stabilizer, based on the non-uniform doped semiconductor thermoelectric conversion, realizes the steady voltage output; and meanwhile, the thermoelectric direct current voltage stabilizer is simple in structure and relatively high in thermoelectric conversion efficiency.
Description
Technical field
The present invention relates to semiconductor heat power conversion technology field, refer in particular to a kind of thermoelectricity direct current stabilizer.
Background technology
In prior art, manostat generally has two kinds: a kind of for adopting the mode of electric resistance partial pressure, namely adopts linear mode to carry out pressure regulation.Have a disadvantage in that: dividing potential drop mode often can only blood pressure lowering, and power attenuation is bigger；Magnetic core manostat volume is big, and weight is big, high material consumption.
Another kind is similar transformator, and such as the DC/DC manostat etc. of PWM mode, by alternating current or pulse current, based on the electric current of change, cooperation corresponding capacitance, inductance element carry out voltage transformation.Having a disadvantage in that: the DC/DC manostat based on variable-current, its output electric current needs through over commutation, filtering etc., could the comparatively straight steady-state current of output waveform, but, even if taking described measure, its output yet suffers from fluctuation；DC/DC manostat needs to coordinate corresponding electric capacity, inductance element, and circuit is more complicated, and is not suitable for large-power occasions；Or even DC/DC manostat generally requires at least tens of KHz, even hundreds of K switching frequency of number MHz, and frequency level is higher, and electromagnetic interference ratio is more serious.
In view of this, the present invention is based on the thermoelectric conversion device of non-uniform doping quasiconductor, itself both can realize the conversion of electric energy → heat energy, can also realizing the conversion of heat energy → electric energy, both combine, it is possible to achieve the transfer of electrical power, and then the regulation and control of output end voltage can be realized, switching frequency is relatively low, disturbs little, and this case thus produces.
Summary of the invention
It is an object of the invention to provide a kind of thermoelectricity direct current stabilizer, the thermo-electric conversion based on non-uniform doping quasiconductor realizes voltage stabilizing output, its simple in construction, and conversion efficiency of thermoelectric is higher.
For reaching above-mentioned purpose, the solution of the present invention is:
A kind of thermoelectricity direct current stabilizer, including primary return and secondary loop；Primary return connects power supply, and primary return includes heater element and the controlled switching component of dutycycle, and switching component is formed with heater element and electrically connects, the thermal power of switching component control heater element；Secondary loop includes quasiconductor electric arm, quasiconductor electric arm is connected with heater element insulating heat-conductive, quasiconductor electric arm arranges at least one section of intentional non-uniform doping section, forms uneven semiconductor properties distribution, and the intentional non-uniform doping section heat absorption of quasiconductor electric arm is converted to electric energy and exports.
Further, the DC resistance of heater element, with the ratio concatenating with it the equivalent d.c. resistance value being in other circuit part within reference voltage node in primary return be more than or equal to 4.
Further, lead hot linked quasiconductor electric arm and heater element periphery cladding thermal insulation layer, meanwhile, quasiconductor electric arm and heater element insulating heat-conductive junction, and quasiconductor electric arm and heater element end connect and be also coated with thermal insulation layer outside wire.
Further, thermal insulation layer is internal fills electric-insulation heat-conduction material.
Further, the form that quasiconductor electric arm is connected with heater element insulating heat-conductive includes mutual stacking, or is mutually reverse, or is mutually wind, or is close to each other；Quasiconductor electric arm and heater element are straight lines along macroscopic electrical current direction, or camber line, or broken line, or coiled helical wire shaped.
Further, the contact surface that quasiconductor electric arm and heater element are connected with insulated heat-conducting medium therebetween is burnishing surface, or is zigzag, or is dressing, or the structure mutually agreed with for concaveconvex shape.
Further, intentional non-uniform doping section be semiconductor properties from N to P or from N+ to N-, or from P-to P+ the semiconductor properties distribution of monotone variation.
Further, the position being adjacent to quasiconductor electric arm inside thermal insulation layer arranges temperature sensitive AFE (analog front end) or temperature monitoring chip.
Further, more than two-layer or the two-layer that the quasiconductor electric arm that insulating heat-conductive is connected is configured to mutual stacking is carried out with same heater element；Thermally coupled is realized between each layer quasiconductor electric arm；Each layer all or part of being electrically connected of quasiconductor electric arm exports afterwards；Closer to the preceding layer quasiconductor electric arm all or part of heat release position in the course of the work of heater element, contact with the insulated heat-conducting medium of the opposite side further from heater element direction.
Further, when independent step-down applications, by doping treatment, the output voltage of configuring semiconductor electric arm, in default duty cycle range, lower than the input voltage at heater element two ends；When individually boosting application, in default duty cycle range, by doping treatment, the output voltage of configuring semiconductor electric arm is higher than input voltage；Both need to realize blood pressure lowering and be also required to realize the application of boosting, pass through doping treatment, make to preset in duty cycle range and be divided into two regions, in the scope that wherein dutycycle is bigger, the output voltage of the intentional non-uniform doping section of quasiconductor electric arm is higher than input voltage, in the scope that dutycycle is less, the output voltage of the intentional non-uniform doping section of quasiconductor electric arm is lower than input voltage.
Further, thermoelectricity direct current stabilizer either internally or externally circuit configures voltage detector component and circuit, configuration master element and circuit, configuration driven circuit；Voltage detecting circuit gathers the output voltage signal of secondary loop, it is transferred to master element, master element calculates actual voltage value, compare with default required voltage stabilizing value scope, and adjust the control signal to switching device accordingly, dutycycle and the frequency of switching device is adjusted, by adjusting so that the output voltage of thermoelectricity direct current stabilizer meets preset level directly or by drive circuit；When initial output voltage is relatively low, tunes up dutycycle, otherwise then turn dutycycle down.
After adopting such scheme, primary return of the present invention connects power supply, electric current makes it produce heat by heater element, and heater element is connected with quasiconductor electric arm insulating heat-conductive, quasiconductor electric arm arranges at least one section of intentional non-uniform doping section, forms uneven semiconductor properties distribution, using intentional non-uniform doping section as heat absorption position, sucking thermal power and carry out thermo-electric conversion, the intentional non-uniform doping section heat absorption of quasiconductor electric arm is converted to electric energy and exports.
Meanwhile, primary return arranges the switching component that dutycycle is controlled, by adjusting the conducting duration dutycycle of primary return, adjust the size of effectively average input electric power.Conducting dutycycle is more big, and the average conducting duration of circuit is more long, then corresponding electrical power input level is more high, and the thermal power of heater element release is more big, it is allowed to the electrical power output valve of secondary loop is more high；Otherwise then electromotive power output is more little.Therefore, it can by adjusting the secondary voltage output that the conducting duration dutycycle of primary return remains stable.
The intentional non-uniform doping section of quasiconductor electric arm, node thermoelectrical potential drop and intentional non-uniform doping two essential parts of section thermoelectrical potential drop can be decomposed into, wherein configure the thermoelectrical potential drop+Δ Ec of intentional non-uniform doping section generation with output voltage in the same direction, and node thermoelectrical potential drop Δ Ea and Δ Eb is likely resistant to voltage, take negative value simultaneously, it is also possible to take respectively on the occasion of and negative value.Overall output voltage U=Δ Ec-(Δ Ea+ Δ Eb), or U=Δ Ec-(Δ Ea-Δ Eb), or U=Δ Ec-(-Δ Ea+ Δ Eb).
Quasiconductor electric arm can configure a heat release node, another node and intentional non-uniform doping section all as heat absorption position, and the direction of thermoelectrical potential drop is consistent with final voltage direction, and the ratio therefore resisting voltage reduces, and conversion efficiency and power are improved.Simultaneously, quasiconductor electric arm relies on the distribution of self semiconductor properties, thermoelectrical potential total drop value Δ Ec is realized connecting in the distance that node is longer, bigger than the absolute value connecting the thermoelectrical potential drop Δ Ea or Δ Eb that node relies on the short distance semiconductor properties sudden change of material difference formation to be formed, retaining the magnitude of voltage got off after counteracting higher, output voltage, power, conversion efficiency are all higher.
Therefore, the present invention realizes voltage stabilizing output, its simple in construction based on the thermo-electric conversion of non-uniform doping quasiconductor, and conversion efficiency of thermoelectric is higher.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Fig. 2 a is heater element of the present invention and quasiconductor electric arm insulating heat-conductive connection diagram one；
Fig. 2 b is heater element of the present invention and quasiconductor electric arm insulating heat-conductive connection diagram two；
Fig. 2 c is heater element of the present invention and quasiconductor electric arm insulating heat-conductive connection diagram three.
Label declaration
Primary return 1 heater element 11
Switching component 12 secondary loop 2
Quasiconductor electric arm 21 thermal insulation layer 3
Thermal insulation layer 4.
Detailed description of the invention
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Consulting shown in Fig. 1 to Fig. 2 c, a kind of thermoelectricity direct current stabilizer that the present invention discloses, including primary return 1 and secondary loop 2.
Primary return 1 connects power supply, and primary return 1 includes heater element 11 and the controlled switching component 12 of dutycycle, and switching component 12 is formed with heater element 11 and electrically connects, and switching component 12 controls the thermal power of heater element 11.
Heater element 11 possesses DC resistance Rr, and when primary return turns on, electric current flows through heater element 11 and produces heat.In order to improve efficiency and control accuracy, in heater element 11 resistance Rr and circuit, other all elements include the ratio between the resistance value Rs of wire be more than or equal to 4, namely the DC resistance Rr institute consumption of electric power of heater element 11 accounts for the ratio of whole power supply input electric power be more than or equal to 80%, ratio less meaning power attenuation is excessive, efficiency is too low, and dutycycle adjustment is obvious not on the impact of heating power, deterioration in accuracy.
Heater element 11 could be arranged to multiple, can be in parallel or series each other, or the mode that series connection mixes with parallel connection is electrically connected, to strengthen power-carrying.
Secondary loop 2 includes quasiconductor electric arm 21, quasiconductor electric arm 21 is connected with heater element 11 insulating heat-conductive, quasiconductor electric arm 21 arranges at least one section of intentional non-uniform doping section, forming uneven semiconductor properties distribution, the intentional non-uniform doping section heat absorption of quasiconductor electric arm 21 is converted to electric energy and exports.
Supply voltage Ui is usually change, and the on-load voltage for heater element 11 DC resistance Rr is typically also change, and its thermal power varies in size, and causes the fluctuation of temperature.In order to realize the adjustable control of temperature and stable, at primary return 1, a controlled switching component of dutycycle 12 is set, this switching component 12 can be switching device or switch arrays, by controlling the dutycycle of conducting duration, adjust effective input value of supply voltage, so that it is guaranteed that heater element 11 is stable with the actual temperature of secondary loop 2 quasiconductor electric arm 21, and then guarantee stablizing of output voltage.
Intentional non-uniform doping section be semiconductor properties from N to P or from N+ to N-, or from P-to P+ the semiconductor properties distribution of monotone variation.The semiconductor properties average rate of change in the unit length of each intentional non-uniform doping section is more big, and corresponding output voltage amplitude is more high；Along current phasor positive direction, semiconductor properties from N to P or from N+ to N-, or from P-to P+ the total length of the segment section of monotone variation, more big with the ratio of the total length of the segment section of semiconductor properties monotone variation in opposite direction, output voltage amplitude is more high；Adjust doping parameters, it is possible to control the amplitude of output voltage；Change the monotone variation direction of secondary semiconductor non-uniform doping, or exchange the lead-out wire being connected with these quasiconductor two ends, it is possible to adjust the direction of output current phasor.
Quasiconductor electric arm 21 could be arranged to independent one or independent one layer, namely thermo-electric conversion can be realized, for improving conversion efficiency and conversion power, quasiconductor electric arm 21 is usually arranged as multiple or multilamellar, the thermally coupled separated or indirectly fitted formation electric insulation by insulated heat-conducting medium close to each other between quasiconductor electric arm 21 more than two-layer or two-layer, thermal power is series flow wherein.Preceding layer or all or part of release end of heat of previous quasiconductor electric arm 21 closer to heater element contact with the insulated heat-conducting medium of the opposite side further from heater element direction, in fact carry out thermally coupled with the heat absorbing end of later layer or later quasiconductor electric arm 21, the former release all or part of thermal power as the latter absorb heat generating part or main energy sources.Wherein realize electrical connection between all or part of quasiconductor electric arm 21, and be finally connected with the wire of output terminal of manostat.
As it is shown in figure 1, be coated with one layer of thermal insulation layer 3 on quasiconductor electric arm 21 and heater element 11, meanwhile, quasiconductor electric arm 21 and heater element 11 insulating heat-conductive junction are also coated with one layer of thermal insulation layer 3.
Thermal insulation layer 3 can stop heat externally to scatter and disappear, or stops outside heat to flow into, and plays and the effect of external thermal environments Isolated Shield.Effect of heat insulation is more good, and hot-fluid vector is more little, and thermal energy is more easy to be absorbed by the heat absorption generating quasiconductor electric arm 21 of secondary loop 2, and the efficiency of power transfer is more high.
In order to strengthen effect of heat insulation, the outside heat-barrier material of all heater elements 11 with quasiconductor electric arm 21 can be wrapped up, the wire of the neighbouring position being connected with this subelement or a part for the parts such as framework, auxiliary material are all wrapped up simultaneously, reduce scattering and disappearing of thermal energy as far as possible, improve the work efficiency of manostat.
In order to equalization temperature is distributed, it is possible to fill electric-insulation heat-conduction layer (not shown) inside thermal insulation layer 3.The heat absorption power generation performance of non-uniform doping quasiconductor is not only relevant with mean temperature, also relevant with profiling temperatures, gap between outer layer thermal insulation layer 3 and internal semiconductor electric arm 21, fills electric-insulation heat-conduction material of good performance, same or similar with the temperature promoting various places inside.This insulating heat-conduction material can be solid-state, it is also possible to be liquid, or the semi liquid state of similar glue, it is also possible to be gaseous state.For the Heat Conduction Material of non-solid, in the manostat example of such as relatively high power, in order to equalization temperature is distributed, it is also possible to join corresponding pipeline and pump, make Heat Conduction Material flow, promote that temperature everywhere is similar or identical.
As shown in Figure 2 a, quasiconductor electric arm 21 and heater element 11 insulating heat-conductive are connected as mutual stacking, stacking thermal insulation layer 4 between quasiconductor electric arm 21 and heater element 11, as shown in Figure 2 b, or it is mutually reverse, as shown in Figure 2 c, or it is mutually wind, or is close to each other.The thermal energy that the target that quasiconductor electric arm 21 is connected with heater element 11 insulating heat-conductive is heater element 11 release as far as possible successfully, is nondestructively transmitted in heat adsorption semiconductor electric arm 21.
Inside manostat, the shape of heater element and quasiconductor electric arm, observe along the macroscopic electrical current direction of propagation, it is possible to for rectilinear form, or be camber line, or broken line, or the line of fall shape of coiled fashion.Overall purpose is to reduce to take volume or area, or takies height, and guarantees enough Power Exchange levels.
Carry out close thermally coupled between heater element 11 and heat absorption generating quasiconductor electric arm 21, but electrically insulated from one another must be guaranteed simultaneously.In order to realize electric insulation, must be spaced from each other between two parts, or separate for intermediary's form with heat-conducting insulation material.
The surface that contacts for increase available heat connection area, quasiconductor electric arm 21 and heater element 11 with intermediate insulation heat-conducting medium can be burnishing surface, or be zigzag, or is dressing, or is other concaveconvex shape, the surface texture mutually agreed with.
The present invention is when independent step-down applications, and the level of input Ui is higher than the Uo of output, and therefore in default duty cycle range, by doping treatment, the output voltage Uo of configuring semiconductor electric arm 21 is always lower than Ui；Equally, the present invention is when individually boosting application, and in default duty cycle range, by doping treatment, the output voltage Uo of configuring semiconductor electric arm 21 is always above Ui；And for both needing to realize the application that blood pressure lowering is also required to realize boosting simultaneously, pass through doping treatment, make to preset in duty cycle range and be divided into two regions, in the scope that wherein dutycycle is bigger, the output voltage Uo of quasiconductor electric arm 21 electrical generation components is always higher than Ui, in the scope that dutycycle is less, the output voltage Uo of quasiconductor electric arm 21 electrical generation components is always lower than Ui.For the horizontal Ui of input voltage, by adjusting different dutycycles, boosting both can be realized, it is also possible to realize blood pressure lowering.
The duty of manostat includes voltage, electric current, the parameters such as temperature, it is required for configuring corresponding circuit and components and parts are monitored, obtained parameter information passes to controller by telecommunication circuit, especially the sample information of the output voltage amplitude of manostat needs to be delivered to control circuit, controller is compared according to pre-set programs or external command, analyze, adjust control instruction, directly or by required drive circuit, control the frequency of switching device, the parameters such as dutycycle, realize the maintenance to required output voltage target, described circuit part is existing routine techniques, do not repeat herein.
Manostat is not when working, and primary return 1 is cut off by switching component 12, and heater element 11 does not discharge thermal power, descends loop just can turn on only in working order, and heater element 11 just can generate heat.
When manostat is by the handoff procedure of the work that do not work, or in inverse process, heater element 11 and the quasiconductor electric arm 21 being thermally coupled thereto require time for the transformation making its actual temperature from ambient temperature to stabilized operating temperature or rightabout transformation, and manostat needs response time.
Heater element 11 is more little with the thermal capacity of quasiconductor electric arm 21, and volume is more little, and the thermal energy corresponding to variations in temperature is more few, response time is more short, therefore, selects heater element 11 and quasiconductor electric arm 21 that thermal capacity is less, reduction volume, contributes to shortening response time.
Reduction heater element 11 and each leisure of quasiconductor electric arm 21 are perpendicular to the thickness of thermal power flow direction, increase thermally coupled area, adopt larger surface area at contact surface, select the modes such as the material that thermal capacity is little, it is possible to improve response speed and power-carrying simultaneously.
In strict accordance with the uneven decision output parameter of temperature inside thermoelectricity manostat, thus typically require and its temperature is monitored, occur to avoid abnormal conditions to continue.Need to be adjacent to the position of quasiconductor electric arm 21 for this inside thermal insulation layer 3 and temperature sensitive AFE (analog front end) is set, or temperature monitoring chip and corresponding circuit.
The foregoing is only the preferred embodiments of the present invention, not the restriction to this case design, all equivalent variations done according to the design key of this case, each fall within the protection domain of this case.
Claims (11)
1. a thermoelectricity direct current stabilizer, it is characterised in that: include primary return and secondary loop；Primary return connects power supply, and primary return includes heater element and the controlled switching component of dutycycle, and switching component is formed with heater element and electrically connects, the thermal power of switching component control heater element；Secondary loop includes quasiconductor electric arm, quasiconductor electric arm is connected with heater element insulating heat-conductive, quasiconductor electric arm arranges at least one section of intentional non-uniform doping section, forms uneven semiconductor properties distribution, and the intentional non-uniform doping section heat absorption of quasiconductor electric arm is converted to electric energy and exports.
2. a kind of thermoelectricity direct current stabilizer as claimed in claim 1, it is characterised in that: the DC resistance of heater element, with the ratio concatenating with it the equivalent d.c. resistance value being in other circuit part within reference voltage node in primary return be more than or equal to 4.
3. a kind of thermoelectricity direct current stabilizer as claimed in claim 1 or 2, it is characterized in that: lead hot linked quasiconductor electric arm and heater element periphery cladding thermal insulation layer, simultaneously, quasiconductor electric arm and heater element insulating heat-conductive junction, and quasiconductor electric arm and heater element end connect and be also coated with thermal insulation layer outside wire.
4. a kind of thermoelectricity direct current stabilizer as claimed in claim 3, it is characterised in that: thermal insulation layer is internal fills electric-insulation heat-conduction material.
5. a kind of thermoelectricity direct current stabilizer as claimed in claim 1 or 2, it is characterised in that: the form that quasiconductor electric arm is connected with heater element insulating heat-conductive includes mutual stacking, or is mutually reverse, or is mutual winding, or is close to each other；Quasiconductor electric arm and heater element are straight lines along macroscopic electrical current direction, or camber line, or broken line, or coiled helical wire shaped.
6. a kind of thermoelectricity direct current stabilizer as claimed in claim 1 or 2, it is characterized in that: the contact surface that quasiconductor electric arm and heater element are connected with insulated heat-conducting medium therebetween is burnishing surface, or be zigzag, or be dressing, or the structure mutually agreed with for concaveconvex shape.
7. thermoelectricity direct current stabilizer as claimed in claim 1 or 2 a kind of, it is characterised in that: deliberately non-uniform doping section be semiconductor properties from N to P or from N+ to N-, or from P-to P+ the semiconductor properties distribution of monotone variation.
8. a kind of thermoelectricity direct current stabilizer as claimed in claim 1 or 2, it is characterised in that: the position being adjacent to quasiconductor electric arm inside thermal insulation layer arranges temperature sensitive AFE (analog front end) or temperature monitoring chip.
9. thermoelectricity direct current stabilizer as claimed in claim 1 or 2 a kind of, it is characterised in that: more than two-layer or the two-layer that the quasiconductor electric arm that insulating heat-conductive is connected is configured to mutual stacking is carried out with same heater element；Thermally coupled is realized between each layer quasiconductor electric arm；Each layer all or part of being electrically connected of quasiconductor electric arm exports afterwards；Closer to the preceding layer quasiconductor electric arm all or part of heat release position in the course of the work of heater element, contact with the insulated heat-conducting medium of the opposite side further from heater element direction.
10. a kind of thermoelectricity direct current stabilizer as claimed in claim 1 or 2, it is characterised in that: when independent step-down applications, by doping treatment, the output voltage of configuring semiconductor electric arm, in default duty cycle range, lower than the input voltage at heater element two ends；When individually boosting application, in default duty cycle range, by doping treatment, the output voltage of configuring semiconductor electric arm is higher than input voltage；Both need to realize blood pressure lowering and be also required to realize the application of boosting, pass through doping treatment, make to preset in duty cycle range and be divided into two regions, in the scope that wherein dutycycle is bigger, the output voltage of the intentional non-uniform doping section of quasiconductor electric arm is higher than input voltage, in the scope that dutycycle is less, the output voltage of the intentional non-uniform doping section of quasiconductor electric arm is lower than input voltage.
11. a kind of thermoelectricity direct current stabilizer as claimed in claim 1 or 2, it is characterised in that: in thermoelectricity direct current stabilizer either internally or externally circuit, configure voltage detector component and circuit, configuration master element and circuit, configuration driven circuit；Voltage detecting circuit gathers the output voltage signal of secondary loop, it is transferred to master element, master element calculates actual voltage value, compare with default required voltage stabilizing value scope, and adjust the control signal to switching device accordingly, dutycycle and the frequency of switching device is adjusted, by adjusting so that the output voltage of thermoelectricity direct current stabilizer meets preset level directly or by drive circuit；When initial output voltage is relatively low, tunes up dutycycle, otherwise then turn dutycycle down.
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| CN201410812712.3A CN105790585A (en) | 2014-12-24 | 2014-12-24 | Thermoelectric direct current voltage stabilizer |
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| CN201410812712.3A CN105790585A (en) | 2014-12-24 | 2014-12-24 | Thermoelectric direct current voltage stabilizer |
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| CN103094468A (en) * | 2011-11-04 | 2013-05-08 | 廖建能 | High-efficiency thermoelectric material |
| CN103745816A (en) * | 2013-12-31 | 2014-04-23 | 联合汽车电子有限公司 | High-energy ignition coil |
| CN103918095A (en) * | 2011-09-08 | 2014-07-09 | 耶德研究和发展有限公司 | Efficiency-enhanced thermoelectric devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3316474A (en) * | 1964-05-21 | 1967-04-25 | Rosemount Eng Co Ltd | Thermoelectric transformer |
| CN1406704A (en) * | 2001-09-05 | 2003-04-02 | 清华同方股份有限公司 | Thermocouple preparation and its apparatus |
| CN101656291A (en) * | 2009-09-21 | 2010-02-24 | 吉林大学 | Functional grade thermoelectric material n-PbTe and preparation method thereof |
| CN103918095A (en) * | 2011-09-08 | 2014-07-09 | 耶德研究和发展有限公司 | Efficiency-enhanced thermoelectric devices |
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Application publication date: 20160720 |