CN105779937A - Method for depositing amorphous diamond thick film on steel substrate by using multi-energy ion beams - Google Patents
Method for depositing amorphous diamond thick film on steel substrate by using multi-energy ion beams Download PDFInfo
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 44
- 239000010432 diamond Substances 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 238000000151 deposition Methods 0.000 title claims abstract description 26
- 229910000831 Steel Inorganic materials 0.000 title claims abstract description 20
- 239000010959 steel Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 20
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 5
- 229910000851 Alloy steel Inorganic materials 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 229910000997 High-speed steel Inorganic materials 0.000 claims 1
- 229910001069 Ti alloy Inorganic materials 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 7
- 230000007704 transition Effects 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000541 cathodic arc deposition Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 10
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000007545 Vickers hardness test Methods 0.000 description 2
- 238000009396 hybridization Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 carbon ions Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
- C23C14/0611—Diamond
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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Abstract
使用多能量离子束在钢衬底上沉积厚度20μm以上非晶金刚石膜的方法,属于硬质耐磨涂层制备领域。本发明的目的是使用磁过滤阴极孤沉积技术,通过在靶上加脉冲负偏压得到多能量的混合离子束,降低薄膜内应力,在低温下,在钢衬底制备出具有高硬度、低摩擦系数、极好的抗磨损性能、20μm以上的非晶金刚石厚膜。具体涉及:钢衬底,低温,磁过滤阴极弧沉积技术,多能量离子束,大体积靶和无金属过渡层。本发明所使用的磁过滤阴极弧沉积设备是拥有自主知识产权的,设备操作简单,制备出的非晶金刚石厚膜适合所有刀具轴承等工业零件中高硬耐磨涂层沉积应用。
A method for depositing an amorphous diamond film with a thickness of more than 20 μm on a steel substrate by using multi-energy ion beams belongs to the field of hard wear-resistant coating preparation. The purpose of the present invention is to use the magnetic filter cathode arc deposition technology to obtain a multi-energy mixed ion beam by applying a pulsed negative bias on the target, reduce the internal stress of the film, and prepare a steel substrate with high hardness and low temperature at low temperature. Friction coefficient, excellent anti-wear performance, thick film of amorphous diamond above 20μm. Specifically involved: steel substrates, low temperature, magnetically filtered cathodic arc deposition techniques, multi-energy ion beams, large volume targets and metal-free transition layers. The magnetic filter cathodic arc deposition equipment used in the present invention has independent intellectual property rights, and the equipment is easy to operate, and the prepared amorphous diamond thick film is suitable for the application of high-hardness and wear-resistant coating deposition in industrial parts such as tool bearings.
Description
技术领域technical field
本发明属于硬质耐磨涂层领域,具体涉及使用多能量离子束在钢衬底制备厚非晶金刚石膜的方法。The invention belongs to the field of hard wear-resistant coatings, in particular to a method for preparing thick amorphous diamond films on steel substrates by using multi-energy ion beams.
技术背景technical background
非晶金刚石(amorphousdiamond,a-D),又称四面体非晶碳(tetrahedralamorphouscarbon,ta-C),是指SP3杂化的含量超过80%以上的无氢类金刚石碳。与非晶碳(a-C)相比,非晶金刚石具有SP3杂化含量高,膜层致密等优点;与氢化非晶碳(a-C:H)相比,非晶金刚石具有沉积温度低、更好的光热稳定性和更高的力学、光学和电学等性能指标;与金刚石膜相比,非晶金刚石具有结构和性能可调、在室温下制备、表面光滑、沉积面积大等优点,因此具备更高的实际应用价值,被广泛应用于机械、电子与微电子、生物医学及航空航天等各个领域,尤其在军工领域DLC涂层发挥着极其重要的作用。Amorphous diamond (amorphous diamond, aD), also known as tetrahedral amorphous carbon (tetrahedral amorphous carbon, ta-C), refers to a hydrogen-free diamond-like carbon with a SP 3 hybridization content exceeding 80%. Compared with amorphous carbon (aC), amorphous diamond has the advantages of high SP 3 hybridization content and dense film; compared with hydrogenated amorphous carbon (aC:H), amorphous diamond has lower deposition temperature and better Excellent photothermal stability and higher mechanical, optical and electrical performance indicators; compared with diamond films, amorphous diamond has the advantages of adjustable structure and properties, preparation at room temperature, smooth surface, and large deposition area, so it has With higher practical application value, it is widely used in various fields such as machinery, electronics and microelectronics, biomedicine and aerospace, especially in the field of military industry. DLC coating plays an extremely important role.
目前,非晶金刚石制备技术大体分为化学气相沉积和物理气相沉积,具体有PECVD法、溅射法、离子镀、激光脉冲沉积和真空电弧沉积等。这些已有方法制备非晶金刚石需要在高温下,而钢衬底在高温下会发生相变,这就使非晶金刚石无法沉积在钢衬底。制备的非晶金刚石膜厚度一般为几百纳米,一方面由于膜基结合力较差,通常使用金属过渡层方法提高结合力,另一方面是由于非晶金刚石膜层的内应力较高,非晶金刚石膜在如此高的内应力下容易崩裂。At present, the preparation technology of amorphous diamond is roughly divided into chemical vapor deposition and physical vapor deposition, specifically PECVD method, sputtering method, ion plating, laser pulse deposition and vacuum arc deposition. The preparation of amorphous diamond by these existing methods requires high temperature, and the steel substrate will undergo phase transformation at high temperature, which prevents the deposition of amorphous diamond on the steel substrate. The thickness of the prepared amorphous diamond film is generally several hundred nanometers. On the one hand, due to the poor bonding force of the film base, the method of metal transition layer is usually used to improve the bonding force. On the other hand, due to the high internal stress of the amorphous diamond film layer, the non-crystalline Crystalline diamond films are prone to cracking under such high internal stress.
针对上述情况,本发明介绍一种使用磁过滤阴极弧技术,低温下,在钢衬底上沉积非晶金刚石厚膜的方法。通过对基底加脉冲负偏压,使到达基底的碳离子束能量不再是单一能量,而是高能量与低能量的混合,这样可以有效降低膜内应力至2-3GPa,解决了由于应力高使膜无法长厚的问题,制备厚度高达20μm、硬度高于5000HV,且具有较好的结合力的非晶金刚石厚膜。In view of the above situation, the present invention introduces a method for depositing an amorphous diamond thick film on a steel substrate at low temperature using the magnetic filter cathodic arc technology. By applying pulsed negative bias to the substrate, the energy of the carbon ion beam reaching the substrate is no longer a single energy, but a mixture of high energy and low energy, which can effectively reduce the internal stress of the film to 2-3GPa, and solve the problem caused by high stress. To solve the problem that the film cannot grow thick, prepare an amorphous diamond thick film with a thickness of up to 20 μm, a hardness higher than 5000HV, and a good bonding force.
发明内容Contents of the invention
本发明的目的是介绍一种使用多能量离子束的磁过滤阴极弧技术,低温下在钢衬底上沉积非晶金刚石厚膜方法。与传统等离子体制备非晶金刚石技术不同,整个制备过程,靶上都加www.w有脉冲负偏压,得到多能量离子束,使到达膜表面的离子能量不再是单一的,而是混合能量,降低膜的内应力,使其可以长厚。本发明中非晶金刚石膜形成过程包括渐变层和沉积层,渐变层是通过高能碳离子轰击表面形成的非晶态,这样可改善膜基结合力。通过使用双弯管,过滤掉大颗粒和中性粒子,提高薄膜纯度。通过控制上下磁场强度、弯管正偏压、靶上负偏压大小、以及负偏压的占空比,以优化非晶金刚石膜的厚度、硬度、摩擦系数、内应力以及结合力等技术指标。The purpose of this invention is to introduce a method of depositing amorphous diamond thick film on steel substrate at low temperature by using the magnetic filter cathodic arc technology of multi-energy ion beam. Different from the traditional plasma preparation of amorphous diamond technology, during the whole preparation process, a pulsed negative bias is applied to the target to obtain a multi-energy ion beam, so that the ion energy reaching the surface of the film is no longer single, but mixed. Energy, reduce the internal stress of the film, so that it can grow thick. The formation process of the amorphous diamond film in the present invention includes a graded layer and a deposition layer. The graded layer is an amorphous state formed by bombarding the surface with high-energy carbon ions, which can improve the bonding force of the film base. Through the use of double elbows, large particles and neutral particles are filtered out to improve membrane purity. By controlling the strength of the upper and lower magnetic fields, the positive bias of the bend, the magnitude of the negative bias on the target, and the duty cycle of the negative bias, the technical indicators such as the thickness, hardness, friction coefficient, internal stress, and bonding force of the amorphous diamond film are optimized. .
本发明有以下优益效果:整个沉积过程温度低,低于钢的相变温度,可以成功的在钢衬底沉积非晶金刚石膜,提高钢件表面性能的同时,又不影响钢件本身的性能。制备高能量的渐变层,渐变层为非晶态,与钢衬底结合良好,同时,过渡层和沉积层使用同一石墨阴极,免去其他金属过渡层换源的复杂操作。在靶上加脉冲偏压,使到达基材的离子能量为混合状态的多能量离子束,这样有效降低非晶金刚石膜的内应力。本发明靶上所加的脉冲负偏压大小可调,占空比可调,达到控制到达钢衬底的离子束能量的目的。本发明提供的磁过滤等离子体沉积非晶金刚石厚膜技术,操作简单,制备的厚膜具有高硬度、耐磨损,低摩擦系数、高结合力等特点,适合应用于刀具及轴承等工件表面沉积等领域。The invention has the following advantageous effects: the temperature of the entire deposition process is low, lower than the phase transition temperature of steel, and the amorphous diamond film can be successfully deposited on the steel substrate, improving the surface performance of the steel piece without affecting the quality of the steel piece itself. performance. Prepare a high-energy gradient layer. The gradient layer is amorphous and well combined with the steel substrate. At the same time, the transition layer and the deposition layer use the same graphite cathode, eliminating the need for complex operations of changing sources for other metal transition layers. Apply pulse bias voltage on the target, so that the ion energy reaching the substrate is a multi-energy ion beam in a mixed state, which effectively reduces the internal stress of the amorphous diamond film. The pulse negative bias applied to the target in the invention can be adjusted in size and duty ratio, so as to achieve the purpose of controlling the energy of the ion beam reaching the steel substrate. The magnetic filtration plasma deposition amorphous diamond thick film technology provided by the present invention is simple to operate, and the prepared thick film has the characteristics of high hardness, wear resistance, low friction coefficient, high binding force, etc., and is suitable for use on the surface of workpieces such as tools and bearings. deposition and other fields.
附图说明Description of drawings
通过附图以及具体实施方式进行说明,本发明上述特征和优点将会变得更加清楚和容易理解。The above-mentioned features and advantages of the present invention will become clearer and easier to understand by describing the accompanying drawings and specific embodiments.
图1为本发明的非晶金刚石厚膜结构示意图,Fig. 1 is the schematic diagram of amorphous diamond thick film structure of the present invention,
附图标号说明:201-衬底,202-渐变层,203-沉积层;Explanation of reference numerals: 201-substrate, 202-gradient layer, 203-deposition layer;
图2为本发明双弯管磁过滤沉积装置结构示意图;Fig. 2 is the structure schematic diagram of the magnetic filtration deposition device of the double elbow of the present invention;
附图标号说明:101-钢衬底、102-石墨阴极源、103-进气口(本方法未使用)、104-进气口(本方法未使用)、105-负偏压、106-磁过滤弯管、107-磁过滤线圈、108-观察窗、109-泵接口;Description of reference numerals: 101-steel substrate, 102-graphite cathode source, 103-inlet (not used in this method), 104-inlet (not used in this method), 105-negative bias, 106-magnetic Filter elbow, 107-magnetic filter coil, 108-observation window, 109-pump interface;
图3为本发明的不锈钢衬底非晶金刚石膜层示意图;Fig. 3 is the stainless steel substrate amorphous diamond film layer schematic diagram of the present invention;
图4为本发明的不锈钢衬底非晶金刚石膜层拉曼测试示意图;Fig. 4 is the Raman test schematic diagram of the stainless steel substrate amorphous diamond film layer of the present invention;
图5为本发明非晶金刚石膜层维氏硬度测试结果;Fig. 5 is the Vickers hardness test result of the amorphous diamond film layer of the present invention;
图6为本发明的合金钢衬底非晶金刚石膜层的摩擦磨损测试示意图。Fig. 6 is a schematic diagram of the friction and wear test of the alloy steel substrate amorphous diamond film layer of the present invention.
具体实施方式detailed description
结合附图说明,以石墨为弧源,不锈钢为衬底为例,详细的介绍本发明磁过滤等离子体沉积制备非晶金刚石厚膜工艺流程,实施步骤如下:In conjunction with the description of the accompanying drawings, taking graphite as the arc source and stainless steel as the substrate as an example, the technical process for preparing an amorphous diamond thick film by magnetic filtration plasma deposition of the present invention is introduced in detail. The implementation steps are as follows:
1.基材清洗:1. Substrate cleaning:
依次使用乙醇、丙酮对不锈钢衬底各超声清洗20分钟。Sequentially use ethanol and acetone to ultrasonically clean the stainless steel substrates for 20 minutes respectively.
2.膜层制备:2. Film layer preparation:
(a)过渡层:将衬底不锈钢固定在靶上,正对磁过滤弯管出口,关闭腔室,抽真空,启动弧源,样品开始加负偏压,开启弯管磁场和正偏压。孤源石墨为纯度99.9%,真空度在10-3GPa以下,弧流100A,弧压约为24V,接近孤源的弯管磁电流为1.50A,接近腔室的弯管磁场电流为2.00A,弯管正偏压为15V,调节离子束能量从高能量逐渐降到沉积能量。整个过程约为10分钟。(a) Transition layer: fix the substrate stainless steel on the target, facing the outlet of the magnetic filter elbow, close the chamber, evacuate, start the arc source, start to apply negative bias to the sample, and turn on the magnetic field and positive bias of the elbow. The purity of the isolated source graphite is 99.9%, the vacuum degree is below 10-3GPa, the arc current is 100A, the arc voltage is about 24V, the magnetic current of the curved tube close to the isolated source is 1.50A, and the magnetic current of the curved tube close to the chamber is 2.00A. The positive bias voltage of the elbow is 15V, and the energy of the ion beam is adjusted from high energy to deposition energy gradually. The whole process takes about 10 minutes.
(b)沉积层:渐变层做完后,将负偏压调为200V到400V,其他参数不变,继续沉积。当弧源石墨持续断弧时,更换弧源,重复步骤(a)后,将负偏压调为200V到400V,继续沉积,沉积时间总共为20小时。(b) Deposition layer: After finishing the gradient layer, adjust the negative bias voltage to 200V to 400V, keep other parameters unchanged, and continue to deposit. When the arc source graphite continues to break the arc, replace the arc source, repeat step (a), adjust the negative bias voltage to 200V to 400V, and continue deposition. The total deposition time is 20 hours.
为对非晶金刚石厚膜性能进行说明,这里可参照图3、4、5以及6,其分别为本发明在不锈钢衬底上沉积非晶金刚石膜厚度示意图、拉曼测试分峰结果示意图以及摩擦磨损测试结果示意图,图5为非晶金刚石膜维氏硬度测试结果。如图3所示非晶金刚石膜厚度为20μm,结合图5可知,非晶金刚石膜层平均维氏硬度在9000HV。此处,图4中拉曼分析是为了表示非晶金刚石层中sp3键含量,D峰面积与G峰面积比反应石墨团簇尺寸大小,经分峰拟合ID/IG为0.354,说明石墨团簇尺寸很小,说明膜中SP3键含量很高。,图6为非晶金刚石厚膜在摩擦磨损设备上(干摩擦,对象为碳化硅圆珠)的摩擦系数示意图,由图可知膜层的平均摩擦系数为0.0882。In order to illustrate the performance of the amorphous diamond thick film, reference can be made here to Figures 3, 4, 5 and 6, which are respectively a schematic diagram of the thickness of the amorphous diamond film deposited on a stainless steel substrate in the present invention, a schematic diagram of the Raman test peak split results, and a friction diagram. Schematic diagram of wear test results, Figure 5 shows the Vickers hardness test results of amorphous diamond film. As shown in FIG. 3 , the thickness of the amorphous diamond film is 20 μm. From FIG. 5 , it can be known that the average Vickers hardness of the amorphous diamond film layer is 9000 HV. Here, the Raman analysis in Figure 4 is to indicate the sp 3 bond content in the amorphous diamond layer, the ratio of the D peak area to the G peak area reflects the size of the graphite cluster, and the ID/IG is 0.354 through peak fitting, indicating that graphite The cluster size is small, indicating a high SP3 bond content in the membrane. , Figure 6 is a schematic diagram of the friction coefficient of the amorphous diamond thick film on the friction and wear equipment (dry friction, the object is a silicon carbide ball). It can be seen from the figure that the average friction coefficient of the film layer is 0.0882.
与现有技术相比,本发明的实施例具有以下优点:Compared with the prior art, the embodiments of the present invention have the following advantages:
1)沉积温度低,可以在不改变钢衬底性能的情况下沉积。1) The deposition temperature is low, and it can be deposited without changing the properties of the steel substrate.
2)与一般制备非晶金刚石膜的方法相比,本方法无需金属过渡层,使设备大大简化。2) Compared with the general method for preparing amorphous diamond film, this method does not need a metal transition layer, which greatly simplifies the equipment.
3)利用脉冲靶上加脉冲的磁过滤双弯管沉积能得到sp3键含量高的非晶金刚石厚膜,膜层硬度高,摩擦系数小,磨损量小。3) The use of pulsed magnetic filtration double elbow deposition on the pulsed target can obtain a thick film of amorphous diamond with high sp 3 bond content, high film hardness, small friction coefficient and small wear.
需要注意的是,以上内容是结合具体的实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施方式仅限于此,在本发明的上述教导下,本领域技术人员可以在上述实施例的基础上进行各种改进和变形,而这些改进或者变形落在本发明的保护范围内。本领域技术人员应该明白,上面的具体描述只是为了解释本发明的目的,并非用于限制本发明。本发明的保护范围由权利要求及其等同物限定。It should be noted that the above content is a further detailed description of the present invention in conjunction with specific embodiments, and it cannot be considered that the specific embodiments of the present invention are limited thereto. Various improvements and modifications are made on the basis of the invention, and these improvements or modifications fall within the protection scope of the present invention. Those skilled in the art should understand that the above specific description is only for the purpose of explaining the present invention, and is not intended to limit the present invention. The protection scope of the present invention is defined by the claims and their equivalents.
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