CN105778774A - Chemical-mechanical polishing solution - Google Patents
Chemical-mechanical polishing solution Download PDFInfo
- Publication number
- CN105778774A CN105778774A CN201410828657.7A CN201410828657A CN105778774A CN 105778774 A CN105778774 A CN 105778774A CN 201410828657 A CN201410828657 A CN 201410828657A CN 105778774 A CN105778774 A CN 105778774A
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- China
- Prior art keywords
- polishing
- polishing fluid
- cerium oxide
- fluid
- acid
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- 238000005498 polishing Methods 0.000 title claims abstract description 131
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000126 substance Substances 0.000 claims abstract description 24
- 239000002253 acid Substances 0.000 claims abstract description 16
- 229920000642 polymer Polymers 0.000 claims abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 239000007800 oxidant agent Substances 0.000 claims abstract description 8
- 230000001105 regulatory effect Effects 0.000 claims abstract description 8
- 239000012530 fluid Substances 0.000 claims description 51
- 230000004888 barrier function Effects 0.000 claims description 22
- 239000003082 abrasive agent Substances 0.000 claims description 21
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 21
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 12
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 12
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 4
- 229920002125 Sokalan® Polymers 0.000 claims description 4
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 4
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims description 4
- 239000004471 Glycine Substances 0.000 claims description 2
- ODKSFYDXXFIFQN-BYPYZUCNSA-N L-arginine Chemical compound OC(=O)[C@@H](N)CCCN=C(N)N ODKSFYDXXFIFQN-BYPYZUCNSA-N 0.000 claims description 2
- 229930064664 L-arginine Natural products 0.000 claims description 2
- 235000014852 L-arginine Nutrition 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- 150000007513 acids Chemical class 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- -1 salt compounds Chemical class 0.000 claims description 2
- 229910004166 TaN Inorganic materials 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 abstract description 3
- 229910052718 tin Inorganic materials 0.000 abstract description 3
- 229910052719 titanium Inorganic materials 0.000 abstract description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 2
- 229940044927 ceric oxide Drugs 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000002738 chelating agent Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a chemical-mechanical polishing solution.Ceric oxide is used as abrasive of the polishing solution, and the polishing solution contains organic polyatomic acid and a high-molecular polymer.The polishing solution has high silicon dioxide polishing rate without a chemical oxidizing agent.The polishing speed of a blocking layer can be regulated within the range of 10-2000 A/min by adjusting the pH value of the polishing solution, and the polishing speed selection ratio of the blocking layer (Ta, Ti, TaN and TiN)/silicon dioxide can be adjusted and controlled by adding the high-molecular polymer and adjusting the pH value of the polishing solution.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid, particularly relate to a kind of chemical mechanical polishing liquid for STI field.
Background technology
Cerium oxide is a kind of chemically mechanical polishing abrasive material extensively concerned in recent years, and this is mainly due to its high polishing activity to silicon dioxide, and can reach high polishing effect under relatively low solid content.Therefore, the chemical mechanical polishing liquid being abrasive material with cerium oxide has bigger application prospect and the market advantage in performance and cost compared to traditional silicon oxide or alumina material.
At present, cerium oxide isolates the existing a large amount of reports of (STI) technique polishing research as abrasive applications in shallow trench, as patent 201310495424.5 reports a kind of chemically mechanical polishing (CMP) compositions isolating (STI) technique for shallow trench, compositions is with cerium oxide for abrasive material, and polishing requires that reaching high silicon oxide/silicon nitride polishing selects ratio；Patent 200510069987.3 reports a kind of chemical mechanical polishing slurry and the method for polishing substrate, involved polishing film is silicon oxide layer, require that silicon oxide is had high polishing speed and the generation of low defect, silicon nitride is shown low polishing speed, thus reaching high silicon oxide/silicon nitride polishing to select ratio.
Report is rarely had for abrasive applications in the research of barrier polishing with cerium oxide.At present, barrier polishing solution is mainly made up of functional components such as abrasive material, oxidant, chelating agent and other additives, involved abrasive material is mainly silicon oxide particle, in order to reach higher barrier polishing speed, it is necessary to polishing fluid has higher abrasive concentration and oxidant, chelating agent content.But, and while improving barrier polishing speed, inevitably this will cause other nonmetal medium (such as silicon oxide) and metal structure (such as copper) polishing planarization in polishing process to worsen to a certain extent, produce such as defects such as Dishing, Erosion.In order to overcome drawbacks described above, the present invention devises a kind of barrier polishing solution being abrasive material with cerium oxide, when relatively low abrasive concentration, it is not necessary to add oxidant, can reach higher polishing speed, and barrier layer/silicon dioxide polishing speed can be realized select more adjustable than within the specific limits.
Summary of the invention
The present invention proposes a kind of chemical mechanical polishing liquid, and this polishing fluid is with ceria for abrasive material, simultaneously possibly together with organic multicomponent acid, high molecular polymer.Polishing fluid disclosed by the invention still has high silicon dioxide polishing speed when without chemical oxidizing agent.And by regulating polishing fluid pH value, can realize barrier polishing speed is regulated and controled within the scope of 10-2000A/min, the regulation and control of ratio can be realized barrier layer (such as Ta, Ti, TaN and TiN)/silicon dioxide polishing speed is selected by adding high molecular polymer.
One method of the present invention is in that to provide a kind of polishing fluid, does not contain chemical oxidizing agent in polishing fluid, and it comprises: the acid of cerium oxide abrasives, organic multicomponent, high molecular polymer.
Wherein, cerium oxide abrasives average particle size is 40-300 nanometer, and cerium oxide abrasives average particle size is 15-100 nanometer, it is preferred that average particle size is 60-250 nanometer, it is preferable that average particle size is 20-60 nanometer.
Wherein, cerium oxide abrasives concentration is mass percent 0.1%-5.0%, it is preferred that concentration is mass percent 0.25%-2.0%.
Wherein, organic multicomponent acid selected by polishing fluid be in acetic acid, citric acid, succinic acid, glycine or L-arginine one or more, selected organic multicomponent acid concentration range in polishing fluid is mass percent 0.1%-0.5%.
In the present invention, high molecular polymer selected by polishing fluid can be selected from polycarboxylic acid compound or polyvinylpyrrolidone (PVP) compounds one or more.Wherein, polycarboxylic acid compound is polycarboxylic acids and salt compounds thereof, polycarboxylic acid compound is selected from one or more in polyacrylic acid (PAA) and sodium polyacrylate (PAAS), and polyacrylic acid (PAA) and sodium polyacrylate (PAAS) relative molecular weight preferably range from 1000-10000；Polyvinylpyrrolidone (PVP) compounds relative molecular weight preferably ranges from one or more polymer within the scope of 1000-10000000, and the K value of polyvinylpyrrolidone (PVP) compounds is 15,17,25 or 90；Selected high molecular polymer content in polishing fluid is mass percent 0.01%-1.0%, and what be more highly preferred to ranges for mass percent 0.1%-0.5%；.
In the present invention, the pH value range of polishing fluid is 4.0-11.0, and described polishing fluid farther includes pH value regulator, and described pH value regulator is KOH or HNO3Solution.
The polishing fluid of the present invention can have high silicon dioxide polishing speed, adjustable barrier polishing speed, and adjustable barrier layer (such as Ta, Ti, TaN and TiN)/silicon dioxide polishing speed and select ratio.
Another aspect of the present invention, it is in that the application providing a kind of chemical mechanical polishing liquid in regulating barrier polishing speed, this application includes: use the polishing fluid of component described above, and the pH value of this polishing fluid is adjusted to more than 7, so that barrier polishing speed reaches more than 1000A/min, or be adjusted to the pH value of this polishing fluid less than or equal to 7, so that barrier polishing speed reaches below 200A/min.
Another aspect of the present invention, is in that the application providing a kind of chemical mechanical polishing liquid in improving silicon dioxide polishing speed, and this application includes: use the polishing fluid of component described above.
Detailed description of the invention
Mode by the examples below further illustrates the present invention, does not therefore limit the present invention among described scope of embodiments.
Composition and proportions polishing fluid, mix homogeneously according to embodiment each in table 1 and comparative example.It is further to note that the aqueous dispersions that cerium oxide particle is original concentration 10wt% to 20wt% used in polishing fluid, the particle diameter of granule is on average to amount to diameter, and its mean diameter is measured by the Nano-ZS90 laser particle size analyzer of Malvern company；The grain size of the cerium oxide particle used in polishing fluid is by the test of XRD-6100 Shimadzu X-ray diffractometer.
In table 1, the concrete dispensing mode of polishing fluid is: by the component except abrasive grains according to content listed in table, mix homogeneously in deionized water, it is adjusted to required pH value with KOH, it is subsequently adding dispersion of abrasive particles, if pH declines, it is adjusted to required pH value with KOH, and supply percentage composition to 100wt% with deionized water, can be prepared by chemical mechanical polishing liquid.
The chemical mechanical polishing liquid Example formulations of table 1 present invention and comparative example formula
1Mean molecule quantity is 1000；2Mean molecule quantity is 10000；3Mean molecule quantity is 4500
The chemical mechanical polishing liquid of table 2 present invention implements comparative example formula
The chemical mechanical polishing liquid of table 3 present invention implements comparative example formula
3Mean molecule quantity is 4500
Effect example
With the chemical mechanical polishing slurry of polishing fluid 1-12 in above-described embodiment and contrast 1-6, blank Cu wafer is polished respectively, polishing condition is identical, burnishing parameters is as follows: Logitech polishing pad, downward pressure 3psi, rotary speed/rubbing head rotating speed=60/80rpm, polishing time 60s, chemical machinery throws flow rate of slurry 100mL/min.Polishing wafer coupons used forms by commercially available (such as U.S. SVTC company produces) 8 inches of plated film wafer coupons.The RT-7O/RG-7B tester that in the metallic film wafer coupons that polishing is used, metallic film layer thickness is produced by NAPSON company records, and the RT-7O/RG-7B tester that TEOS thickness is produced by TEOSNANOMatrics company records.Namely obtaining metallic film removal rate by the thickness difference recorded before and after polishing divided by the polishing consumption time, polishing time is 1 minute.
The experimental technique of unreceipted actual conditions in embodiment, generally conventionally condition, or according to manufacturer it is proposed that condition.
The chemical mechanical polishing liquid embodiment of table 4 present invention and comparative example polishing effect
From table 4, it can be seen that in embodiment 1-12, with cerium oxide for abrasive material, by adding key chemical and the regulation and control to pH, it is possible to reach higher TEOS polishing speed, realize barrier film polishing speed is regulated and controled within the scope of 10-2000A/min simultaneously；Especially, embodiment 7-10 is when chemical constituent is close, only change the pH of polishing fluid, barrier film polishing speed is occur in that obvious turnover before and after 7.0 at pH, when pH≤7.0, barrier film correspondence polishing speed is relatively low, as pH > 7.0, barrier film correspondence polishing speed quickly increases, illustrate in cerium oxide abrasives polishing fluid system, when being not added with oxidant, barrier film correspondence polishing speed can by regulating the regulation and control of polishing fluid pH.The polishing speed of TEOS is then mainly through adding the high molecular polymer realization regulation and control to polishing speed.The scope that comparative example's 1-2 correspondence formula pH value comprises beyond the present invention, limits under ambit in polishing fluid pH scope beyond the present invention, polishing fluid stability extremely unstable；Comparative example 3-6 is respectively with silicon oxide and aluminium oxide for abrasive material, it is shown that corresponding TEOS polishing speed is very low, barrier film polishing speed is relatively low, and is not regulated and controled by polishing fluid pH.
Above specific embodiments of the invention being described in detail, but it is intended only as example, the present invention is not restricted to particular embodiments described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and replacement are also all among scope of the invention.Therefore, the equalization made without departing from the spirit and scope of the invention converts and amendment, all should contain within the scope of the invention.
Claims (20)
1. a chemical mechanical polishing liquid, does not contain chemical oxidizing agent in polishing fluid, it comprises: the acid of cerium oxide abrasives, organic multicomponent, high molecular polymer.
2. polishing fluid as claimed in claim 1, wherein, described cerium oxide abrasives average particle size is 40-300 nanometer.
3. polishing fluid as claimed in claim 1, wherein, described cerium oxide abrasives average particle size is 15-100 nanometer.
4. polishing fluid as claimed in claim 1, wherein, described cerium oxide abrasives average particle size is 60-250 nanometer.
5. polishing fluid as claimed in claim 1, wherein, described cerium oxide abrasives average particle size is 20-60 nanometer.
6. polishing fluid as claimed in claim 1, wherein, described cerium oxide abrasives concentration is mass percent 0.1%-5.0%.
7. polishing fluid as claimed in claim 6, wherein, described cerium oxide abrasives concentration is mass percent 0.25%-2.0%.
8. polishing fluid as claimed in claim 1, wherein, described organic multicomponent acid be in acetic acid, citric acid, succinic acid, glycine or L-arginine one or more.
9. polishing fluid as claimed in claim 1, wherein, the concentration range of described organic multicomponent acid is mass percent 0.1%-0.5%.
10. polishing fluid as claimed in claim 1, wherein, described high molecular polymer in polycarboxylic acid compound or polyvinylpyrrolidone (PVP) compounds one or more.
11. polishing fluid as claimed in claim 10, wherein, described polycarboxylic acid compound is polycarboxylic acids and salt compounds thereof.
12. polishing fluid as claimed in claim 10, wherein, described polycarboxylic acid compound is selected from one or more in polyacrylic acid (PAA) and sodium polyacrylate (PAAS).
13. polishing fluid as claimed in claim 12, wherein, described polyacrylic acid (PAA) and sodium polyacrylate (PAAS) relative molecular weight preferably range from 1000-10000.
14. polishing fluid as claimed in claim 10, wherein, described polyvinylpyrrolidone (PVP) compounds relative molecular weight preferably ranges from 1000-10000000 scope.
15. polishing fluid as claimed in claim 10, wherein, the K value of described polyvinylpyrrolidone (PVP) compounds is 15,17,25 or 90.
16. polishing fluid as claimed in claim 1, wherein, the content of described high molecular polymer is mass percent 0.01%-1.0%.
17. polishing fluid as claimed in claim 16, wherein, the content of described high molecular polymer is mass percent 0.1%-0.5%.
18. polishing fluid as claimed in claim 1, wherein, the pH value range of described polishing fluid is 4.0-11.0.
19. the application that a chemical mechanical polishing liquid is in regulating barrier polishing speed, this application includes: use the polishing fluid as described in any one of claim 1-18, and the pH value of described polishing fluid is adjusted to more than 7, so that barrier polishing speed reaches more than 1000A/min, or be adjusted to the pH value of described polishing fluid less than or equal to 7, so that barrier polishing speed reaches below 200A/min.
20. the application that chemical mechanical polishing liquid is in improving silicon dioxide polishing speed, this application includes: use the polishing fluid as described in any one of claim 1-18.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410828657.7A CN105778774A (en) | 2014-12-23 | 2014-12-23 | Chemical-mechanical polishing solution |
| TW104141062A TW201623559A (en) | 2014-12-23 | 2015-12-08 | CMP slurry |
| PCT/CN2015/000896 WO2016101332A1 (en) | 2014-12-23 | 2015-12-14 | Chemical mechanical polishing slurry |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410828657.7A CN105778774A (en) | 2014-12-23 | 2014-12-23 | Chemical-mechanical polishing solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105778774A true CN105778774A (en) | 2016-07-20 |
Family
ID=56149027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410828657.7A Pending CN105778774A (en) | 2014-12-23 | 2014-12-23 | Chemical-mechanical polishing solution |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN105778774A (en) |
| TW (1) | TW201623559A (en) |
| WO (1) | WO2016101332A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111378385A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子（上海）有限公司 | Application of alpha alumina abrasive in polishing of PI (polyimide) material |
| CN111378371A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子科技（上海）股份有限公司 | Application of pyrogallic acid in polishing of silicon dioxide |
| CN111378372A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子（上海）有限公司 | Application of acetic acid in STI polishing |
| CN115056132A (en) * | 2022-03-21 | 2022-09-16 | 康劲 | Control method for dielectric and copper rate selection ratio in CMP process |
| WO2023098719A1 (en) * | 2021-11-30 | 2023-06-08 | 安集微电子（上海）有限公司 | Method for preparing cerium oxide nanocomposite, cerium oxide nanocomposite, and chemical mechanical polishing solution |
| WO2023116867A1 (en) * | 2021-12-23 | 2023-06-29 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing slurry and usage method therefor |
| CN119529678A (en) * | 2025-01-22 | 2025-02-28 | 齐芯微(绍兴)电子材料科技有限公司 | A chemical mechanical polishing liquid and its preparation method and application |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116970343B (en) * | 2023-08-02 | 2024-08-30 | 包头天骄清美稀土抛光粉有限公司 | Rare earth polishing solution for polishing curved glass cover plate and preparation method and application thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006339594A (en) * | 2005-06-06 | 2006-12-14 | Seimi Chem Co Ltd | Abrasive for semiconductor |
| KR100812052B1 (en) * | 2005-11-14 | 2008-03-10 | 주식회사 엘지화학 | Cerium carbonate powder, cerium oxide powder, method for preparing the same, and cmp slurry comprising the same |
| WO2008081943A1 (en) * | 2006-12-28 | 2008-07-10 | Kao Corporation | Polishing liquid composition |
| KR101094662B1 (en) * | 2008-07-24 | 2011-12-20 | 솔브레인 주식회사 | Chemical Mechanical Abrasive Composition Containing Polysilicon Abrasive Stopping Agent |
| KR101084676B1 (en) * | 2008-12-03 | 2011-11-22 | 주식회사 엘지화학 | Slurry composition for primary chemical mechanical polishing and chemical mechanical polishing method |
| WO2011049318A2 (en) * | 2009-10-13 | 2011-04-28 | 주식회사 엘지화학 | Slurry composition for cmp, and polishing method |
| CN103865402A (en) * | 2012-12-17 | 2014-06-18 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid |
-
2014
- 2014-12-23 CN CN201410828657.7A patent/CN105778774A/en active Pending
-
2015
- 2015-12-08 TW TW104141062A patent/TW201623559A/en unknown
- 2015-12-14 WO PCT/CN2015/000896 patent/WO2016101332A1/en active Application Filing
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111378385A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子（上海）有限公司 | Application of alpha alumina abrasive in polishing of PI (polyimide) material |
| CN111378371A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子科技（上海）股份有限公司 | Application of pyrogallic acid in polishing of silicon dioxide |
| CN111378372A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子（上海）有限公司 | Application of acetic acid in STI polishing |
| CN111378371B (en) * | 2018-12-28 | 2022-05-13 | 安集微电子科技（上海）股份有限公司 | Application of pyrogallic acid in polishing of silicon dioxide |
| CN111378372B (en) * | 2018-12-28 | 2022-05-13 | 安集微电子（上海）有限公司 | Application of acetic acid in STI polishing |
| CN111378385B (en) * | 2018-12-28 | 2023-08-08 | 安集微电子（上海）有限公司 | Application of alpha alumina abrasive in PI material polishing |
| WO2023098719A1 (en) * | 2021-11-30 | 2023-06-08 | 安集微电子（上海）有限公司 | Method for preparing cerium oxide nanocomposite, cerium oxide nanocomposite, and chemical mechanical polishing solution |
| WO2023116867A1 (en) * | 2021-12-23 | 2023-06-29 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing slurry and usage method therefor |
| CN115056132A (en) * | 2022-03-21 | 2022-09-16 | 康劲 | Control method for dielectric and copper rate selection ratio in CMP process |
| CN119529678A (en) * | 2025-01-22 | 2025-02-28 | 齐芯微(绍兴)电子材料科技有限公司 | A chemical mechanical polishing liquid and its preparation method and application |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016101332A1 (en) | 2016-06-30 |
| TW201623559A (en) | 2016-07-01 |
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Application publication date: 20160720 |