CN105762161B - Method for manufacturing light sensing unit of light sensing array and structure thereof - Google Patents
Method for manufacturing light sensing unit of light sensing array and structure thereof Download PDFInfo
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- CN105762161B CN105762161B CN201610107533.9A CN201610107533A CN105762161B CN 105762161 B CN105762161 B CN 105762161B CN 201610107533 A CN201610107533 A CN 201610107533A CN 105762161 B CN105762161 B CN 105762161B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000010410 layer Substances 0.000 claims abstract description 259
- 239000011241 protective layer Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims description 85
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000007769 metal material Substances 0.000 claims description 15
- 230000000873 masking effect Effects 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 23
- 239000000463 material Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 230000012447 hatching Effects 0.000 description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 12
- 229910052750 molybdenum Inorganic materials 0.000 description 12
- 239000011733 molybdenum Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 239000004411 aluminium Substances 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000002262 irrigation Effects 0.000 description 10
- 238000003973 irrigation Methods 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 7
- 229910001195 gallium oxide Inorganic materials 0.000 description 7
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- KWXIRYKCFANFRC-UHFFFAOYSA-N [O--].[O--].[O--].[Al+3].[In+3] Chemical compound [O--].[O--].[O--].[Al+3].[In+3] KWXIRYKCFANFRC-UHFFFAOYSA-N 0.000 description 3
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical compound Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- -1 IZO) Chemical compound 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
A method for manufacturing a light sensing unit of a light sensing array comprises providing a substrate having at least one unit region thereon. Active devices are formed in the cell regions on the substrate. A first electrode layer is formed in a unit area on a substrate and electrically connected with an active element. A protective layer is formed on the active device. A shielding layer is formed on the passivation layer to shield the active device. After the shielding layer is formed, a light sensing layer is formed on the protective layer in the unit area, and a second electrode layer is formed on the light sensing layer.
Description
Technical field
The invention relates to a kind of manufacturing methods of sensing unit, and in particular to a kind of light of light sensing array
The manufacturing method and its structure of sensing unit.
Background technique
Light sensing unit is that one kind is commonly used to mobile phone, tablet computer, notebook computer or medical diagnosis backman
The light sensitive component of the electronic devices such as tool.Traditionally, the manufacturing process of light sensing unit be after forming oxide semiconductor layer, then
Form corresponding light sensing unit.However, when carrying out the deposition step of light sensing unit, it can be right because of hydrionic generation
Oxide-semiconductor devices cause electrically unstable or electrical the phenomenon that degenerating.Based on hydrogen ion for oxide semiconductor layer
It electrically influences, the manufacturing process of existing light sensing unit can derive the problem of yield declines and cause the increasing of manufacturing cost
Add.In addition, existing oxide-semiconductor devices are also easy to be influenced by aqueous vapor, the electrically unstable of semiconductor element is caused
It is fixed.Therefore, the structure of the manufacturing process and semiconductor element that how to improve light sensing unit avoids hydrogen ion and aqueous vapor from being brought
Influence be an important topic must overcoming of current pole.
Summary of the invention
The present invention provides the manufacturing method and its structure of a kind of light sensing unit of light sensing array, can be used to solve hydrogen from
Problem is electrically influenced brought by son and aqueous vapor.
The manufacturing method of the light sensing unit of light sensing array of the invention, including substrate is provided, have at least on substrate
One unit area.Active member is formed in unit area on substrate.First electrode is formed in unit area on substrate
Layer, the first electrode layer and active member are electrically connected.Protective layer is formed on active member.Masking is formed on the protection layer
Layer, to cover active member.After forming shielding layer, light sensing layer is formed on the protective layer in unit area, and, in
The second electrode lay is formed on light sensing layer.
Wherein, it further includes and forms a barrier wall around the active member.
Wherein, the forming method of the active member includes:
A grid is formed on the substrate；
An insulating layer is formed on the gate；
Semi-conductor layer is formed on which insulating layer；
An etch stop layer is formed on the semiconductor layer；And
A source electrode and a drain electrode are formed on the etch stop layer, the source electrode and the drain electrode connect with the semiconductor layer
Touching, wherein the barrier wall includes one first barrier wall, and should in forming the barrier wall in the insulating layer and the etch stop layer
First barrier wall surrounds the active member.
Wherein, it further includes in forming the barrier wall in the protective layer, which includes one second barrier wall, second resistance
Partition wall surrounds the active member.
Wherein, which is located at the lower section of the protective layer, and the first electrode layer and the source electrode and drain electrode are same
When formed.
Wherein, which covers the active member and covers the entire unit area.
Wherein, the lamination light sensing layer is on the active member.
Wherein, it further includes in forming a flatness layer on the protective layer, and the shielding layer is located on the flatness layer.
Wherein, which is located on the flatness layer, and the first electrode layer is formed simultaneously with the shielding layer.
The present invention separately provides a kind of light sensing unit of light sensing array, including substrate, active member, first electrode layer,
Protective layer, shielding layer, light sensing layer and the second electrode lay.The substrate includes an at least unit area.Active member is located at
In the unit area of substrate.First electrode layer is located in unit area and is electrically connected with active member.Protective layer covering is actively
Element and first electrode layer.Shielding layer is located on protective layer, wherein shielding layer masking active member and the entire cellular zone of masking
Domain.Light sensing layer is located on protective layer and is electrically connected with first electrode layer.The second electrode lay is located on light sensing layer.
Wherein, a barrier wall is further included, the active member is surrounded.
Wherein, which includes:
One grid is located on the substrate；
One insulating layer is located on the grid；
Semi-conductor layer is located on the insulating layer；
One etch stop layer is located on the semiconductor layer；And
One source electrode and a drain electrode are located on the etch stop layer, and the source electrode and the drain electrode are contacted with the semiconductor layer.
Wherein, which is located in the etch stop layer and the protective layer, and first barrier wall is metal
Material.
Wherein, which is located at the lower section of the protective layer, and the first electrode layer and the source electrode and the drain electrode
Belong to same film layer.
Wherein, which includes one first barrier wall, which is located at the insulating layer and the etch-stop
In layer, and first barrier wall surrounds the active member.
Wherein, first barrier wall and the first electrode layer belong to same film layer.
Wherein, which includes one second barrier wall, which is located in the protective layer, and second barrier
Walled is around the active member.
Wherein, second barrier wall and the shielding layer belong to same film layer.
Wherein, a flatness layer is further included, is located on the protective layer, and the shielding layer is located on the flatness layer.
Wherein, which is located on the flatness layer, and the first electrode layer and the shielding layer belong to same film layer.
Wherein, which covers the entire unit area.
Wherein, the lamination light sensing layer is on the active member.
Based on above-mentioned, the light sensing unit that the manufacturing method of the present invention is formed by light sensing array includes first electrode
The structure of layer, shielding layer and barrier wall.Therefore, when subsequent step forms light sensing layer, the structure can be used to stop hydrogen
The dispersal behavior of ion or aqueous vapor avoids influencing the electrical property of semiconductor element.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and cooperate institute's accompanying drawings
It is described in detail below.
Detailed description of the invention
Fig. 1 is the light sensing array schematic diagram according to one embodiment of the invention.
Fig. 2A to Fig. 2 F is the upper schematic diagram of the manufacturing process of the light sensing unit of one embodiment of the invention.
Fig. 3 A to Fig. 3 G is the diagrammatic cross-section of the manufacturing process of the light sensing unit of one embodiment of the invention.
Fig. 4 is the light sensing unit schematic diagram of another embodiment of the present invention.
Fig. 5 is the light sensing unit schematic diagram of another embodiment of the present invention.
Fig. 6 is the light sensing unit schematic diagram of another embodiment of the present invention.
Fig. 7 is the light sensing unit schematic diagram of another embodiment of the present invention.
Fig. 8 is the light sensing unit schematic diagram of another embodiment of the present invention.
Fig. 9 A is the upper schematic diagram of the semiconductor element of the light sensing unit of another embodiment of the present invention.
Fig. 9 B is the diagrammatic cross-section that Fig. 9 A prolongs hatching line A-A '.
Fig. 9 C is the diagrammatic cross-section that Fig. 9 A prolongs hatching line B-B '.
Figure 10 A is the IV curve graph of existing semiconductor element.
Figure 10 B is the IV curve graph of the semiconductor element of the light sensing unit of one embodiment of the invention.
Figure 10 C is the IV curve graph of the semiconductor element of the light sensing unit of a comparative example of the invention.
Wherein, appended drawing reference:
DL: data line
GL: grid line
TFT: active member
PS: light sensing layer
R: unit area
Sub: substrate
G: grid
GI: insulating layer
AL: semiconductor layer
ES: etch stop layer
V1, V2, OP: opening
T1: the first irrigation canals and ditches
T2: the second irrigation canals and ditches
S: source electrode
D: drain electrode
' 1 M1, M: first electrode layer
M2: the second electrode lay
BW0: barrier wall
' 1: the first BW1, BW barrier wall
' 2: the second BW2, BW barrier wall
PL1: the first protective layer
PL2: the second protective layer
PL3: third protective layer
SD: shielding layer
PN, PLN: flatness layer
CH: contact hole
Specific embodiment
Fig. 1 is the light sensing array schematic diagram according to one embodiment of the invention.In the present embodiment, light sensing array includes
Multiple light sensing units.Each light sensing unit is located at region defined in multiple data lines DL and a plurality of gate lines G L (also
That is unit area R) in.Based on the considerations of electric conductivity, gate lines G L and data line DL are usually to use metal material.So, this hair
Bright without being limited thereto, according to other embodiments, other conductive materials are also can be used in gate lines G L and data line DL.Such as: alloy,
The nitride of metal material, the oxide of metal material, the nitrogen oxides of metal material or other suitable materials or gold
Belong to material and other stack layers for leading material.In addition, each light sensing unit respectively includes active member TFT and light sensing layer
PS, wherein active member TFT is electrically connected with data line DL, gate lines G L and light sensing layer PS respectively.Hereinafter, will be directed to
The manufacturing process of a part of light sensing unit in the R of unit area is illustrated, such as Fig. 2A to Fig. 2 F and Fig. 3 A to Fig. 3 G
It is shown.
Fig. 2A to Fig. 2 F is the upper schematic diagram of the manufacturing process of the light sensing unit of one embodiment of the invention.Fig. 3 A extremely schemes
3G is the diagrammatic cross-section of the manufacturing process of the light sensing unit of one embodiment of the invention.Fig. 3 A to Fig. 3 F is respectively corresponding diagram 2A
To the diagrammatic cross-section of Fig. 2 F.Firstly, Fig. 2A and Fig. 3 A is please referred to, the light sensing unit of the light sensing array of the present embodiment
Manufacturing method includes providing substrate Sub, has an at least unit area R on the substrate Sub (as Fig. 1 is indicated).Substrate Sub
Material can be glass, quartz, organic polymer or metal etc..
In forming active member in the unit area R on substrate Sub.The forming method of the active member is included in substrate
The gate lines G L for forming grid G on Sub and being connect with grid G, and grid G with form insulating layer on gate lines G L
GI.Then, semiconductor layer AL is formed on insulating layer GI.In particular, semiconductor layer AL can be oxide semiconductor material, including
Such as indium gallium zinc (Indium-Gallium-Zinc Oxide, IGZO), zinc oxide (ZnO) tin oxide (SnO), indium oxide
Zinc (Indium-Zinc Oxide, IZO), gallium oxide zinc (Gallium-Zinc Oxide, GZO), zinc-tin oxide (Zinc-Tin
Oxide, ZTO) or tin indium oxide (Indium-Tin Oxide, ITO) etc., but not limited to this.Semiconductor layer AL is also possible to
Amorphous silicon, polysilicon or other semiconductor materials.
From the above, Fig. 2 B and Fig. 3 B is please referred to, forms etching eventually in the top of semiconductor layer AL and insulating layer GI
Only layer ES.There is opening V1 and the first irrigation canals and ditches T1 in etch stop layer ES.In particular, the first irrigation canals and ditches T1 is through etching
Stop layer ES and insulating layer GI to extend to the surface of substrate Sub, and the first irrigation canals and ditches T1 by semiconductor layer AL with grid G packet
Enclose (as shown in Figure 2 B).
Then, Fig. 2 C and Fig. 3 C is please referred to, forms source S and drain D on etch stop layer ES, and at the same time
First electrode layer M1 is formed in unit area R on substrate Sub.In the present embodiment, first electrode layer M1 and source S and leakage
Pole D is simultaneously formed, and belongs to same film layer.In addition, source S and drain D are to contact through opening V1 with semiconductor layer AL.
The first electrode layer M1 is electrically connected with drain D.If Fig. 3 C is indicated, above-mentioned grid G, source S, drain D and partly lead
Body layer AL forms active member TFT.In this present embodiment, barrier wall BW0 is formed around active member TFT, wherein obstructing
Wall BW0 includes the first barrier wall BW1.While forming first electrode layer M1, source S and drain D, further include in insulating layer
The first barrier wall BW1 is formed in the first irrigation canals and ditches T1 of GI and etch stop layer ES.First barrier wall BW1 material may include metal
Oxide conducting material such as tin indium oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum oxide indium, indium oxide
(InO), gallium oxide (gallium oxide, GaO) or other metal conductive oxide materials, graphene, metal material such as molybdenum
(Mo), titanium (Ti) or other metal materials, metal alloy such as molybdenum nitride (MoN), above-mentioned material combination or other have
The conductive material of low resistance.First electrode layer M1 be metal material include metal such as aluminium, titanium/aluminium/titanium, molybdenum, molybdenum/aluminium/molybdenum, on
The alloy or other suitable metal or alloy for stating metal composition are in this present embodiment.First barrier wall BW1 and first electrode layer
M1 can be formed for same steps.First barrier wall BW1 is to insert in the first irrigation canals and ditches T1, and the first barrier wall BW1 is around master
Dynamic element TFT.In the present embodiment, the first barrier wall BW1 and first electrode layer M1 can be formed for different step, and material can be for not
Together, so this is not intended to limit the invention.Since the first barrier wall BW1 surrounds active member TFT, it is walked in subsequent technique
In rapid, it can avoid hydrogen ion and diffusion of moisture and the electrical property of active member TFT made to be affected.In the present embodiment, actively
Element TFT is illustrated by taking bottom grid film transistor as an example, however, the present invention is not limited thereto.According to other embodiments, institute
Stating active member TFT can be top gate-type thin film transistor.
Then, Fig. 2 D and Fig. 3 D is please referred to, forms the first protective layer PL1 on active member TFT, wherein first electrode
Layer M1 is positioned at the lower section of the first protective layer PL1.First protective layer PL1 has the second irrigation canals and ditches T2 and opening V2.Described second
Irrigation canals and ditches T2 is through protective layer PL1 and extends to the surface of first electrode layer M1, and the second irrigation canals and ditches T2 surrounds above-mentioned active member
TFT (as shown in Figure 2 D).
Come again, please refer to Fig. 2 E and Fig. 3 E, forms shielding layer SD, on protective layer PL1 to cover active member TFT.
The shielding layer SD covers the active member TFT in entire unit area R, and shielding layer SD is made of opaque metal.
The metal material includes the alloy or other suitable of metal such as aluminium, titanium/aluminium/titanium, molybdenum, molybdenum/aluminium/molybdenum, above-mentioned metal composition
Metal or alloy in this present embodiment.In addition, further including the second ditch in protective layer PL1 while forming shielding layer SD
Barrier wall BW0 is formed in canal T2, wherein barrier wall BW0 includes the second barrier wall BW2, and the second barrier wall BW2 is around master
Dynamic element TFT.The material of second barrier wall BW2 may include metal conductive oxide material such as tin indium oxide (ITO), indium oxide
Zinc (IZO), aluminum zinc oxide (AZO), aluminum oxide indium, indium oxide (InO), gallium oxide (gallium oxide, GaO) or other gold
Belong to oxide conducting material, graphene, metal material such as molybdenum (Mo), titanium (Ti) or other metal materials, metal alloy is for example
Molybdenum nitride (MoN), the combination of above-mentioned material or other conductive materials with low resistance.In addition, the second barrier wall BW2 with
Shielding layer SD can be formed for same steps, and the second barrier wall BW2 and shielding layer SD belong to same film layer.However, in this implementation
In example, the second barrier wall BW2 and shielding layer SD can be formed for different step, and material can be difference, and so this is not to limit
The present invention.Since the first barrier wall BW1 and the second barrier wall BW2 surrounds active member TFT, in subsequent process steps
In, the diffusion of hydrogen ion and aqueous vapor can be further avoided and the electrical property of active member TFT is made to be affected.
Come again, please refer to Fig. 2 F and Fig. 3 F, after forming shielding layer SD, forms light sensing layer in the R of unit area
PS, wherein light sensing layer PS is inserted in the opening V2 of protective layer PL1.Light sensing layer PS is through opening V2 and first electrode
Layer M1 is electrically connected.After forming light sensing layer PS, can be respectively formed above light sensing layer PS the second protective layer PL2,
The second electrode lay M2 and third protective layer PL3 is to form light sensing unit structure as shown in Figure 3 G.
Specifically, light sensing unit structure shown in Fig. 3 G can correspond to the semiconductor element of one embodiment of the invention,
And to prolong the diagrammatic cross-section of hatching line X-X ' corresponding to Fig. 2 F.With reference to Fig. 3 G, semiconductor element includes substrate Sub, active member
TFT, protective layer PL1 and the first barrier wall BW1.Active member TFT is located on substrate Sub.In particular, active member TFT packet
Include grid G, insulating layer GI, semiconductor layer AL, etch stop layer ES, source S and drain D.From the above, insulating layer GI is covered
Grid G.Semiconductor layer AL is located above grid G.Etch stop layer ES covers semiconductor layer AL.Source S and drain D are located at erosion
It carves on stop layer ES, and in electrical contact with semiconductor layer AL.
In addition, protective layer PL1 is to cover active member TFT, and the first barrier wall BW1 surrounds active member TFT.Scheming
In the embodiment of 3G, semiconductor element further include first electrode layer M1, shielding layer SD, light sensing layer PS, the second electrode lay M2 with
And the second barrier wall BW2 (see Fig. 3 E).From the above, first electrode layer M1 and active member TFT is electrically connected, and protective layer
PL1 covers first electrode layer M1.Second barrier wall BW2 is located in protective layer PL1, and surrounds active member TFT.Shielding layer SD
In on protective layer PL1, and cover active member TFT.Light sensing layer PS is located on protective layer PL1, and electric with first electrode layer M1
Property connection.In addition, the second electrode lay M2 is located on light sensing layer PL1.
In the semiconductor element of Fig. 3 G, since the first barrier wall BW1 and the second barrier wall BW2 surrounds active member
Therefore TFT can further avoid the diffusion of hydrogen ion and aqueous vapor and the electrical property of active member TFT is made to be affected.
Fig. 4 is the light sensing unit schematic diagram of another embodiment of the present invention.The light sensing unit structure of Fig. 4 and the light of Fig. 3 G
Sensing unit structure is similar, and is similarly the section for prolonging hatching line X-X ' corresponding to Fig. 2 F, and therefore, similar elements are with identical label table
Show, and it will not go into details.The light sensing unit difference of Fig. 4 and Fig. 3 G is, the manufacturing method of the light sensing unit of Fig. 4 further include in
Flatness layer PN is formed on protective layer PL1, and shielding layer SD is to be located on protective layer PL1 and flatness layer PN, and cover active element
Part TFT and the entire unit area R of masking.Due to increasing flatness layer PN, first electrode layer M ' 1 and active element can be reduced
The chance of occurrence of part TFT parasitic capacitance, while the flatness of photoinduction layer PS is also ensured.First electrode layer M ' 1 is to be located at
On flatness layer PN, and first electrode layer M ' 1 and shielding layer SD is simultaneously formed.In other words, first electrode layer M ' 1 and shielding layer SD
It is to belong to same film layer.In addition, the light sensing unit structure compared to Fig. 3 G, light sensing layer PS is to be stacked on active member TFT
On, therefore increase the sensing area of light sensing layer PS.In the present embodiment, since first electrode layer M ' 1 and shielding layer SD are
It is formed simultaneously in the top of active member TFT, therefore, when forming light sensing layer PS, can avoid the expansion of hydrogen ion and aqueous vapor
It dissipates and the electrical property of active member TFT is made to be affected.
Fig. 5 is the light sensing unit schematic diagram of another embodiment of the present invention.The light sensing unit of Fig. 5 embodiment is with similar
It is formed in the manufacturing method of Fig. 4 light sensing unit.The light sensing unit structure of Fig. 5 and the light sensing unit structure of Fig. 4 are similar,
And it is similarly the section for prolonging hatching line X-X ' corresponding to Fig. 2 F, therefore, similar elements are given the same reference numerals, and it will not go into details.Fig. 5
It is that the manufacturing method of the light sensing unit of Fig. 5 further includes around active member TFT with the light sensing unit difference of Fig. 4
Form the first barrier wall BW ' 1.In the present embodiment, since the first barrier wall BW ' 1 surrounds active member TFT, in subsequent
In processing step, it can avoid the diffusion of hydrogen ion and aqueous vapor and the electrical property of active member TFT made to be affected.
Fig. 6 is the light sensing unit schematic diagram of another embodiment of the present invention.The light sensing unit of Fig. 6 embodiment is with similar
It is formed in the manufacturing method of Fig. 5 light sensing unit.The light sensing unit structure of Fig. 6 and the light sensing unit structure of Fig. 5 are similar,
And it is similarly the section for prolonging hatching line X-X ' corresponding to Fig. 2 F, therefore, similar elements are given the same reference numerals, and it will not go into details.Fig. 6
It is with the light sensing unit difference of Fig. 5, the manufacturing method of the light sensing unit of Fig. 6 is further included in forming second in flatness layer PN
Barrier wall BW ' 2, wherein the second barrier wall BW ' 2 surrounds active member TFT.In the present embodiment, due to the first barrier wall BW ' 1
And second barrier wall BW ' 2 surround active member TFT, therefore, in subsequent process steps, can further avoid hydrogen ion with
And aqueous vapor diffusion and so that the electrical property of active member TFT is affected.
Fig. 7 is the light sensing unit schematic diagram of another embodiment of the present invention.The light sensing unit of Fig. 7 embodiment is with similar
It is formed in the manufacturing method of Fig. 4 light sensing unit.The light sensing unit structure of Fig. 7 and the light sensing unit structure of Fig. 4 are similar,
And it is similarly the section for prolonging hatching line X-X ' corresponding to Fig. 2 F, therefore, similar elements are given the same reference numerals, and it will not go into details.Fig. 7
It is with the light sensing unit difference of Fig. 4, the light sensing unit of Fig. 7 does not include flatness layer PN, and light sensing layer PS is directly formed
In the top of first electrode layer M ' 1 and shielding layer SD, and it is stacked on active member TFT.In the present embodiment, due to first
Electrode layer M ' 1 and shielding layer SD are simultaneously formed in the top of active member TFT, therefore, when forming light sensing layer PS, can be kept away
Exempt from the diffusion of hydrogen ion and aqueous vapor and the electrical property of active member TFT is made to be affected.
Fig. 8 is the light sensing unit schematic diagram of another embodiment of the present invention.The light sensing unit of Fig. 8 embodiment is with similar
It is formed in the manufacturing method of Fig. 7 light sensing unit.The light sensing unit structure of Fig. 8 and the light sensing unit structure of Fig. 7 are similar,
And it is similarly the section for prolonging hatching line X-X ' corresponding to Fig. 2 F, therefore, similar elements are given the same reference numerals, and it will not go into details.Fig. 8
It is that the manufacturing method of the light sensing unit of Fig. 8 further includes around active member TFT with the light sensing unit difference of Fig. 7
Form the first barrier wall BW ' 1.In the present embodiment, since the first barrier wall BW ' 1 surrounds active member TFT, in subsequent
In processing step, it can avoid the diffusion of hydrogen ion and aqueous vapor and the electrical property of active member TFT made to be affected.
Fig. 9 A is the upper schematic diagram of the semiconductor element of the light sensing unit of another embodiment of the present invention.Fig. 9 B is Fig. 9 A
Prolong the diagrammatic cross-section of hatching line A-A '.Fig. 9 C is the diagrammatic cross-section that Fig. 9 A prolongs hatching line B-B '.Please also refer to Fig. 9 A, Fig. 9 B with
And Fig. 9 C.The semiconductor element of the light sensing unit of the present embodiment include substrate Sub, active member TFT, protective layer PL1 with
And shielding layer SD.Active member TFT is located on substrate Sub, and active member TFT includes grid G, insulating layer GI, semiconductor layer
AL, etch stop layer ES, source S and drain D.From the above, insulating layer GI covers grid G, and semiconductor layer AL is located at grid G
Top.Etch stop layer ES covers semiconductor layer AL.Source S and drain D are located on etch stop layer ES, and and semiconductor layer
AL is in electrical contact.
In the present embodiment, semiconductor element further includes the top that flatness layer PLN is located at protective layer PL1.Opening OP is surrounded
Active member TFT, and be located in flatness layer PLN and protective layer PL1.Shielding layer SD is located on protective layer PL1, wherein covering
Layer SD covers active member TFT, and shielding layer SD covers entire unit area.Shielding layer SD is made of opaque metal,
The metal material includes the alloy or other suitable of metal such as aluminium, titanium/aluminium/titanium, molybdenum, molybdenum/aluminium/molybdenum, above-mentioned metal composition
Metal or alloy in this present embodiment.In addition, in the section of hatching line A-A ', barrier wall BW0 can insert flatness layer PLN and
The opening OP of protective layer PL1.It will be appreciated, however, that opening OP is through flatness layer PLN and extends in the section of hatching line B-B '
To the surface of protective layer PL1.In other words, in the section of hatching line B-B ', shielding layer SD can only insert the opening of flatness layer PLN
OP, so that it is electrically insulated with data line DL.
The material of barrier wall BW0 may include metal conductive oxide material such as tin indium oxide (ITO), indium zinc oxide
(IZO), aluminum zinc oxide (AZO), aluminum oxide indium, indium oxide (InO), gallium oxide (gallium oxide, GaO) or other metals
Oxide conducting material, graphene, metal material such as tungsten, molybdenum, titanium, copper, aluminium or silver or other metal materials, metal alloy example
Such as molybdenum nitride (MoN), the combination of above-mentioned material or other conductive materials with low resistance.Shielding layer SD and barrier wall BW0
It can be formed for same steps, however, the invention is not limited thereto.In this present embodiment, barrier wall BW0 can be different from shielding layer SD
Step is formed, and material can be difference, and so this is not intended to limit the invention.
With reference to Fig. 9 A to Fig. 9 C, barrier wall BW0 is around active member TFT.That is, barrier wall BW0 is that filling is opened
Mouthful OP and around the side of active member TFT, and the top of shielding layer SD covering active member TFT.Barrier wall BW0 by
The contact hole CH of opening OP is contacted with the drain D of active member TFT.In addition, the thickness of shielding layer SD is greater than 100 nanometers.?
In the present embodiment, since barrier wall BW0 can surround active member TFT, the diffusion of hydrogen ion and aqueous vapor can be stopped, kept away
The electrical property for exempting from active member TFT is affected.In addition, in the semiconductor element shown in Fig. 9 A to Fig. 9 C, it can be in barrier wall
Light sensing layer is formed above BW0, makes light sensing layer laminate on active member TFT, to reach the light of another embodiment of the present invention
Sensing unit structure.
Embodiment
In order to prove that the semiconductor element of light sensing unit of the present invention can be used to stop the diffusion of hydrogen ion and aqueous vapor, keep away
The electrical property for exempting from active member TFT is affected, especially using following Examples as explanation.
Figure 10 A is the IV curve graph (Ids-Vgs curve) of existing semiconductor element.In the embodiment of Figure 10 A, it is
Without any hydrogen ion and in the state of aqueous vapor, the IV curve of voltage and current relationship is measured for existing semiconductor element
Figure.By Figure 10 A, it can be seen that, without any hydrogen ion and in the state of aqueous vapor, the active member of general semiconductor element exists
Under different voltage VD (0.1V and 10V), all can normally it be switched.
Figure 10 B is the IV curve graph of the semiconductor element of the light sensing unit of one embodiment of the invention.Figure 10 B is that have
In the state of hydrogen ion and aqueous vapor, for the semiconductor element of the light sensing unit of Fig. 9 A to Fig. 9 C, that is, there is barrier
The IV curve graph of voltage and current relationship that the semiconductor element of wall BW0 is measured.It is found by the experimental result of Figure 10 B, even if
With hydrogen ion and in the state of aqueous vapor, the IV curve graph of the semiconductor element of Fig. 9 A to Fig. 9 C and the IV curve of Figure 10 A
Figure is no different.That is, semiconductor element of the invention is due to including barrier wall BW0 to stop hydrogen ion and aqueous vapor pair
Therefore the influence of active member TFT is no different under voltage and current relationship and normal condition.In other words, with hydrogen ion with
And in the state of aqueous vapor, the active member TFT of semiconductor element of the invention (0.1V and 10V) at different voltage VD, all
It can normally be switched.
Figure 10 C is the IV curve graph of the semiconductor element of the light sensing unit of a comparative example of the invention.Figure 10 C is that have
It for existing semiconductor element, that is, does not include the semiconductor element of barrier wall BW0 in the state of hydrogen ion and aqueous vapor
The IV curve graph of the voltage and current relationship that are measured.It is found by the experimental result of Figure 10 C, with hydrogen ion and aqueous vapor
Under state, influence that the electric characteristics of the active member of existing semiconductor element will receive.Specifically, due to existing half
Conductor element does not include barrier wall BW0, therefore, it is impossible to effectively stop the diffusion of hydrogen ion and aqueous vapor.In other words, have
In the state of hydrogen ion and aqueous vapor, the active member of existing semiconductor element (0.1V and 10V) at different voltage VD,
It can not normally be switched.
In conclusion the light sensing unit that the manufacturing method of the present invention is formed by light sensing array includes first electrode
Layer M1 (M ' 1), shielding layer SD, barrier wall BW0 (including first, second barrier wall) structure.In particular, first electrode layer M1 (M '
1) and shielding layer SD is formed at the top of active member TFT, to cover active member TFT.In addition, barrier wall BW0 meeting
Active member TFT is surrounded.Therefore, when being subsequently formed the step of light sensing layer PS, above structure can be used to stop hydrogen ion
Or the diffusion effect of aqueous vapor avoids the electrical property of active member TFT from being affected.In addition, in the above-described embodiment, due to light
Sensed layer PS is formed after first electrode layer M1 (M ' 1) and shielding layer SD, therefore, can avoid the erosion in light sensing layer PS
During quarter, damage of the used plasma-based to the channel generation of active member TFT.
Certainly, the present invention can also have other various embodiments, without deviating from the spirit and substance of the present invention, ripe
Various corresponding changes and modifications, but these corresponding changes and modifications can be made according to the present invention by knowing those skilled in the art
It all should belong to the protection scope of the claims in the present invention.
Claims (20)
1. a kind of manufacturing method of the light sensing unit of light sensing array characterized by comprising
One substrate is provided, there is an at least unit area on the substrate；
An active member is formed in the unit area on the substrate；
A first electrode layer is formed in the unit area on the substrate, which electrically connects with the active member
It connects；
A protective layer is formed on the active member；
A shielding layer is formed, on the protective layer to cover the active member；
After forming the shielding layer, a light sensing layer is formed on the protective layer in the unit area；In the light sensing layer
One the second electrode lay of upper formation；And
A barrier wall is formed around the active member.
2. the manufacturing method of the light sensing unit of light sensing array according to claim 1, which is characterized in that the active element
The forming method of part includes:
A grid is formed on the substrate；
An insulating layer is formed on the gate；
Semi-conductor layer is formed on which insulating layer；
An etch stop layer is formed on the semiconductor layer；And
A source electrode is formed on the etch stop layer and a drain electrode, the source electrode and the drain electrode are contacted with the semiconductor layer,
In in forming the barrier wall in the insulating layer and the etch stop layer, which includes one first barrier wall, and this first
Barrier wall surrounds the active member.
3. the manufacturing method of the light sensing unit of light sensing array according to claim 2, which is characterized in that further include in
The barrier wall is formed in the protective layer, which includes one second barrier wall, which surrounds the active member.
4. the manufacturing method of the light sensing unit of light sensing array according to claim 2, which is characterized in that first electricity
Pole layer is located at the lower section of the protective layer, and the first electrode layer is formed simultaneously with the source electrode and drain electrode.
5. the manufacturing method of the light sensing unit of light sensing array according to claim 1, which is characterized in that the shielding layer
It covers the active member and covers the entire unit area.
6. the manufacturing method of the light sensing unit of light sensing array according to claim 5, which is characterized in that the lamination light
Sensed layer is on the active member.
7. the manufacturing method of the light sensing unit of light sensing array according to claim 1, which is characterized in that further include in
A flatness layer is formed on the protective layer, and the shielding layer is located on the flatness layer.
8. the manufacturing method of the light sensing unit of light sensing array according to claim 7, which is characterized in that first electricity
Pole layer is located on the flatness layer, and the first electrode layer is formed simultaneously with the shielding layer.
9. a kind of light sensing unit of light sensing array characterized by comprising
One substrate, including an at least unit area；
One active member, in the unit area of the substrate；
One first electrode layer is located in the unit area and is electrically connected with the active member；
One protective layer covers the active member and the first electrode layer；
One shielding layer is located on the protective layer, and wherein the shielding layer covers the active member；
One light sensing layer is located on the protective layer and is electrically connected with the first electrode layer；
One the second electrode lay is located on the light sensing layer；And
One first barrier wall surrounds the active member.
10. the light sensing unit of light sensing array according to claim 9, which is characterized in that the active member includes:
One grid is located on the substrate；
One insulating layer is located on the grid；
Semi-conductor layer is located on the insulating layer；
One etch stop layer is located on the semiconductor layer；And
One source electrode and a drain electrode are located on the etch stop layer, and the source electrode and the drain electrode are contacted with the semiconductor layer.
11. the light sensing unit of light sensing array according to claim 10, which is characterized in that first barrier wall is located at
In the etch stop layer and the protective layer, and first barrier wall is metal material.
12. the light sensing unit of light sensing array according to claim 10, which is characterized in that the first electrode layer is located at
The lower section of the protective layer, and the first electrode layer belongs to same film layer with the source electrode and the drain electrode.
13. the light sensing unit of light sensing array according to claim 12, which is characterized in that the barrier wall includes one the
One barrier wall, first barrier wall are located in the insulating layer and the etch stop layer, and first barrier wall is around the active
Element.
14. the light sensing unit of light sensing array according to claim 13, which is characterized in that first barrier wall with should
First electrode layer belongs to same film layer.
15. the light sensing unit of light sensing array according to claim 13, which is characterized in that the barrier wall includes one the
Two barrier walls, second barrier wall are located in the protective layer, and second barrier wall surrounds the active member.
16. the light sensing unit of light sensing array according to claim 15, which is characterized in that second barrier wall with should
Shielding layer belongs to same film layer.
17. the light sensing unit of light sensing array according to claim 16, which is characterized in that a flatness layer is further included,
On the protective layer, and the shielding layer is located on the flatness layer.
18. the light sensing unit of light sensing array according to claim 17, which is characterized in that the first electrode layer is located at
On the flatness layer, and the first electrode layer and the shielding layer belong to same film layer.
19. the light sensing unit of light sensing array according to claim 9, which is characterized in that shielding layer masking is entire
The unit area.
20. the light sensing unit of light sensing array according to claim 19, which is characterized in that the lamination light sensing layer in
On the active member.
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| TW104140041 | 2015-12-01 | ||
| TW104140041A TWI590426B (en) | 2015-12-01 | 2015-12-01 | Manufacturing method and structure of light sensing unit of light sensing array |
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| CN109065558B (en) | 2018-08-09 | 2021-10-12 | 京东方科技集团股份有限公司 | Back plate, manufacturing method thereof and detection device |
| CN115117108A (en) * | 2022-01-19 | 2022-09-27 | 友达光电股份有限公司 | sensing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050122458A1 (en) * | 2003-12-05 | 2005-06-09 | Chien-Sheng Yang | [pixel structure and fabricating method thereof] |
| US20110102696A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, driving method of the same, and electronic appliance including the same |
| CN102646687A (en) * | 2011-02-16 | 2012-08-22 | 精工爱普生株式会社 | Photoelectric conversion device, electronic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050122458A1 (en) * | 2003-12-05 | 2005-06-09 | Chien-Sheng Yang | [pixel structure and fabricating method thereof] |
| US20110102696A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, driving method of the same, and electronic appliance including the same |
| CN102646687A (en) * | 2011-02-16 | 2012-08-22 | 精工爱普生株式会社 | Photoelectric conversion device, electronic equipment |
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