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CN105755438A - High temperature self compensation multilayered composite film strain gauge and preparation method thereof - Google Patents

High temperature self compensation multilayered composite film strain gauge and preparation method thereof Download PDF

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Publication number
CN105755438A
CN105755438A CN201610194927.2A CN201610194927A CN105755438A CN 105755438 A CN105755438 A CN 105755438A CN 201610194927 A CN201610194927 A CN 201610194927A CN 105755438 A CN105755438 A CN 105755438A
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layer
tan
strain
strained layer
pacr
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CN105755438B (en
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张丛春
王岩磊
丁桂甫
段力
杨申勇
刘哲
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Shanghai Jiao Tong University
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance

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  • General Physics & Mathematics (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

本发明提供一种高温自补偿多层复合薄膜应变计及其制备方法，所述应变计包括高温合金构件基底、氧化铝绝缘层、第一TaN应变层、PaCr应变层、第二TaN应变层、氧化铝或氧化硅保护层和Pt电极。以高温合金构件为基底，在基底上双离子束溅射沉积氧化铝绝缘薄膜，在绝缘薄膜上射频磁控溅射沉积TaN和PaCr自补偿应变层，在应变层上双离子束溅射氧化铝或氧化硅保护层。本发明适用于在构件工作过程中的实时测量；采用TaN和PaCr合金应变层，克服了温度变化对构件应变测量的影响，使高温测量精度大大提高；采用离子束溅射氧化铝或氧化硅保护层结构致密、结合力好，对功能结构起到了非常好的保护作用。

The invention provides a high-temperature self-compensating multilayer composite film strain gauge and a preparation method thereof. The strain gauge comprises a high-temperature alloy member substrate, an alumina insulating layer, a first TaN strain layer, a PaCr strain layer, a second TaN strain layer, Aluminum oxide or silicon oxide protective layer and Pt electrodes. Using superalloy components as the substrate, deposit aluminum oxide insulating films on the substrate by dual ion beam sputtering, deposit TaN and PaCr self-compensating strain layers on the insulating films by radio frequency magnetron sputtering, and double ion beam sputtering alumina on the strained layers or silicon oxide protective layer. The invention is suitable for real-time measurement during the working process of the component; the TaN and PaCr alloy strain layer is used to overcome the influence of temperature changes on the strain measurement of the component, so that the high-temperature measurement accuracy is greatly improved; the aluminum oxide or silicon oxide protection is adopted by ion beam sputtering The layer structure is dense and the bonding force is good, which plays a very good role in protecting the functional structure.

Description

A kind of high-temperature self-compensating multi-layer compound film strain gauge and preparation method thereof
Technical field
The present invention relates to thin film sensor design and production technical field, concrete, relate to a kind of in superalloy components original position prepare, the high temperature film strain gauge with temperature self-compensation function and preparation method thereof.
Background technology
For the parts of at high temperature longtime running, its creep is the principal element causing inefficacy.Such as, in modern turbine aircraft engines technology, turbo blade is operated in the extreme environment of high temperature, high pressure, highly corrosive.Therefore the design of turbo blade and selection become vital link during electromotor manufactures and designs.In order to determine the structural model of turbine engine blade and the assessment to blade new material performance, the mechanical behavior monitoring blade in real time is necessary.
Traditional foil gauge has metal wire type or foil gage.And thin film strain meter is compared to traditional foil gauge, thickness is in micron dimension, it is possible to achieve original position makes and measures, and the structure influence of tested component can be ignored, and corresponding speed is fast, test accuracy is high, highly sensitive.
On hardware, original position prepares strain gauge, and device and the high-temperature insulation of substrate are always up restricting the key factor of real-time monitoring.Aluminum oxide film generally selected by insulant.The aluminum oxide film deposited by the method for reactive sputtering mentioned in patent " a kind of semiconductive thin film high temperature deformation sensor " (CN103900460A).It is harsh that the method prepares the condition required for aluminum oxide film, it is necessary to accurately controls the flow-rate ratio of oxygen and argon, and reaction at high temperature carries out, and the requirement of equipment is relatively stricter, and manufacturing cost is also higher.The drawback that reactive sputtering aluminium oxide there is also is in sputter procedure, if condition controls bad, it is easy to target " poisoning " phenomenon occurs, is that sputter procedure cannot complete, will have a strong impact on the quality of thin film.The first high-temperature process NiCoCrAlY alloy substrates mentioned in patent " a kind of thin film strain takes into account its preparation method " (CN103921500A) produces the alumina transition layer of 1～2 μm, then utilizes the aluminium oxide that the method for electron beam evaporation deposits 10～15 μm.During the excessive layer of high-temperature process NiCoCrAlY, it is easy to generate the electrical conductivity such as the NiO oxide higher than aluminium oxide more than ten times, the insulating properties of dielectric film will be had a strong impact on.This method there is also the shortcomings such as complicated process of preparation.
Owing to the change of temperature can produce bigger resistance variations when electric resistance wire strain gauge works in the extreme environment of electromotor, thus causing that measurement result deviation is big.And use the composite strain membrane structure that temperature-coefficient of electrical resistance (TCR) is little can slow down this effect.And PdCr alloy has positive TCR, TaN to have negative both TCR reasonably combination to can be obtained by the self compensation laminated film strain gauge of TCR nearly zero.
Summary of the invention
In order to overcome the defect of prior art, the present invention provides a kind of high-temperature self-compensating multi-layer compound film strain gauge that on high temperature alloy structural member prepared by original position and preparation method thereof, not only achieve hardware in site measurement at high temperature, and it is thinned the overall dimensions of device, enormously simplify processing technology.
This invention address that the technical scheme that the problems referred to above adopt is:
According to an aspect of the present invention; a kind of high-temperature self-compensating multi-layer compound film strain gauge is provided; described strain gauge includes superalloy components substrate, alumina insulating layer, a TaN strained layer, PaCr strained layer, the 2nd TaN strained layer, aluminium oxide or silicon oxide protective layer and Pt electrode, wherein:
Alumina insulating layer is deposited in superalloy components substrate；Oneth TaN strained layer is deposited on alumina insulating layer；PaCr strained layer is deposited on a TaN strained layer, and the 2nd TaN strained layer is deposited on PaCr strained layer；Aluminium oxide or silicon oxide protective layer are covered on the 2nd TaN strained layer；Pt electrode deposition is connected with a TaN strained layer, PaCr strained layer, the 2nd TaN strained layer and aluminium oxide or silicon oxide protective layer on alumina insulating layer and with sidewall simultaneously, while Pt electrode upper surface be exposed to outside aluminium oxide or silicon oxide protective layer for going between.
Preferably, prepared by described strain gauge original position in superalloy components substrate, the application of temperature of superalloy components substrate is at 500～1200 DEG C.
Preferably, in a described TaN strained layer, PaCr strained layer and the 2nd TaN strained layer, PaCr strained layer is positioned in the middle of a TaN strained layer and the 2nd TaN strained layer, oneth TaN strained layer, PaCr strained layer and the 2nd TaN strained layer are collectively forming the composite strain layer of sandwich structure, i.e. composition self-compensating strain layer, in order to eliminate resistance temperature effect.
According to another aspect of the present invention, it is provided that the preparation method of a kind of high-temperature self-compensating multi-layer compound film strain gauge, described method comprises the steps:
Step 1, cleaning superalloy components substrate；
Step 2, use double ion beam sputtered machine, sputtering sedimentation alumina insulating layer in superalloy components substrate；
Step 3, in the superalloy components substrate complete step 2 reaction magnetocontrol sputtering the oneth TaN strained layer；
Step 4, in the superalloy components substrate complete step 3 rf magnetron sputtering PaCr strained layer；
Step 5, in the superalloy components substrate complete step 4 reaction magnetocontrol sputtering the 2nd TaN strained layer；
Step 6, on the component complete above-mentioned steps spin coating photoresist, utilize strained layer mask plate to carry out UV exposure, development；
Step 7, utilizing ion etching, sputtering has formation strained layer figure on the sandwich structure composite strain layer component of a TaN strained layer, PaCr strained layer and the 2nd TaN strained layer after development；
Step 8, utilizing acetone to wash away photoresist, deionized water cleans, dry；
Step 9, again completing the component surface spin coating photoresist of above-mentioned steps, utilize electrode layer mask plate to carry out UV exposure, development；
Step 10, complete the component surface magnetron sputtering Pt electrode of above-mentioned steps；
Step 11, utilizing acetone to wash away photoresist, deionized water cleans, dry；
Step 12, utilize double ion beam sputtered machine, complete component surface sputtering sedimentation aluminium oxide or the silicon oxide protective layer of above-mentioned steps.
Preferably, in step 2, the thickness of described alumina insulating layer is 2～4 μm, and the target used by deposition is 99.99% high-purity sapphire target.
It is highly preferred that in step 2, the Al:O stoichiometric proportion of described alumina insulating layer is 2:3.
Preferably, in step 3, the thickness of a described TaN strained layer is 100～400nm.
Preferably, in step 4, the thickness of described PaCr strained layer is 200～600nm.
Preferably, in step 5, the thickness of the 2nd described TaN strained layer is 100～400nm.
Preferably, in step 12, described aluminium oxide or the thickness of silicon oxide protective layer are 1～2 μm, and the target used by deposition is 99.99% high-purity sapphire target.
It is highly preferred that in step 12, the Al:O stoichiometric proportion of described aluminium oxide or silicon oxide protective layer is 2:3.
Each preferred parameter designing more than present invention, it is possible to obtain the theory of evolution metering aluminum oxide film of ratio and enough thickness, to ensure insulating properties that alumina insulating film is good and the protectiveness that strained layer is good.Ensure that the best proportion of each layer thickness of composite strain layer so that the temperature-coefficient of electrical resistance of strain gauge is close to zero.
Compared with prior art, the present invention has following beneficial effect:
The present invention adopts double ion beam sputtered alumina insulating film and protective layer, and its film forming is uniform, fine and close, and high temperature insulation characteristic is good.Wherein, alumina insulating film ensure that the proper device operation prepared in superalloy components original position and not by the impact of conductive substrates.Further, the thickness of 2～4 μm for component run produce impact can ignore, it is achieved do not affect component properly functioning when carry out in site measurement.Aluminium oxide or silicon oxide protective layer, because of the characteristic of its densification, make strain figures from erosion under extreme working environment, it is ensured that the normal operation of device.
The TaN/PdCr composite strain layer that the present invention adopts, temperature-coefficient of electrical resistance according to TaN is negative value, the temperature-coefficient of electrical resistance of PdCr be on the occasion of, both are reasonable must modulate the composite strain layer obtaining temperature-coefficient of electrical resistance nearly zero, counteract the measurement error that electric resistance wire strain gauge causes due to the intrinsic resistance-temperature characteristic of material, make the precision of strain measurement be greatly improved.
Accompanying drawing explanation
By reading detailed description non-limiting example made with reference to the following drawings, the other features, objects and advantages of the present invention will become more apparent upon:
Fig. 1 is the high-temperature self-compensating strain gauge structure schematic diagram that one embodiment of the invention is deposited directly on hardware.
Fig. 2 is the top view (B-B sectional view) of the high-temperature self-compensating strain gauge that one embodiment of the invention is deposited directly on hardware.
In figure: 1 be nickel based metal construction basis, 2 be alumina insulating layer, 3 be TaN strained layer, 4 be PaCr strained layer, 5 be TaN strained layer, 6 be aluminium oxide or silicon oxide protective layer, 7 be Pt electrode.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in detail.Following example will assist in those skilled in the art and are further appreciated by the present invention, but do not limit the present invention in any form.It should be pointed out that, to those skilled in the art, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement.These broadly fall into protection scope of the present invention.
As shown in Figure 1 and Figure 2, the structural representation of the high-temperature self-compensating strain gauge for being deposited directly on hardware, wherein, Fig. 2 is B-B sectional view shown in Fig. 1, and A-A section shown in Fig. 2 and Fig. 1.
Referring to accompanying drawing 1-2: a kind of high-temperature self-compensating multi-layer compound film strain gauge being deposited directly on hardware; including: nickel based metal construction basis 1, alumina insulating layer 2, TaN strained layer 3, PaCr strained layer 4, TaN strained layer 5, aluminium oxide or silicon oxide protective layer 6, Pt electrode 7, wherein:
Alumina insulating layer 2 is deposited on nickel based metal construction basis 1；TaN strained layer 3 is deposited on alumina insulating layer 2；PaCr strained layer 4 is deposited on TaN strained layer 3；TaN strained layer 5 is deposited on PaCr strained layer 4；Aluminium oxide or silicon oxide protective layer 6 are covered on TaN strained layer 5；Pt electrode 7 is deposited on alumina insulating layer 2 and is connected with aN strained layer 3, PaCr strained layer 4, TaN strained layer 5 and aluminium oxide or silicon oxide protective layer 6 with sidewall simultaneously, while Pt electrode 7 upper surface be exposed to outside aluminium oxide or silicon oxide protective layer 6 for going between.
In above-mentioned strain gauge: described PaCr strained layer 4 is positioned in the middle of TaN strained layer 3 and TaN strained layer 5, and TaN strained layer 3, PaCr strained layer 4, TaN strained layer 5 are collectively forming the composite strain layer of sandwich structure, in order to eliminate resistance temperature effect.
In above-mentioned strain gauge: described alumina insulating layer 2 adopts double ion beam sputtered system to prepare, it is achieved that alumina preparation technique simplifies.Simultaneously as the thin film consistency prepared by double ion beam sputtered system is high, uniformity is good, so the thickness of alumina insulating layer 2 only 2～4 μm of insulation effect that just can reach a high temperature.
In above-mentioned strain gauge: having negative TCR owing to described PaCr strained layer 4 varies with temperature positive TCR, TaN strained layer variation with temperature, both are reasonable must arrange in pairs or groups, it is possible to modulation obtains TCR close to the composite strain layer of zero, substantially increases the precision of strain measurement.
As an optimal way, prepared by described strain gauge original position on nickel based metal construction basis 1, the application of temperature of superalloy components substrate 1 is at 500～1200 DEG C.
Further, based on said structure, the present invention also optimizes the preparation method devising above-mentioned high-temperature self-compensating multi-layer compound film strain gauge, specifically includes following steps:
Step 1: with dehydrated alcohol, acetone, deionized water ultrasonic cleaning nickel based metal construction basis 1；
Step 2: put in double ion beam sputtered machine by nickel based metal construction basis 1, uses high-purity sapphire target, is extracted into base vacuum 10-3～10-4Pa, passes into Ar gas and O2Gas, regulating operating air pressure is 10-2Pa, the thickness of sputtering sedimentation alumina insulating layer 2 is to 2～4 μm；
Target used by deposition is 99.99% high-purity sapphire target；The Al:O stoichiometric proportion of described alumina insulating layer 2 is 2:3；
Step 3: the nickel based metal construction basis 1 completing step 2 is put in magnetron sputter, is evacuated to 10-3～10-4Pa, passes into nitrogen, regulates operating air pressure 0～10Pa, sputtering power 100W, and the thickness of sputtering TaN strained layer 3 is to 100～400nm；
Step 4: magnetron sputtering PaCr strained layer 4, takes out base vacuum to 10-3～10-4Pa, passes into Ar gas, and adjustment operating air pressure is 0～10Pa, and sputtering power is 100～400W, and the thickness of sputtering PaCr strained layer 4 is to 200～600nm；
Step 5: the nickel based metal construction basis 1 completing step 4 is put in magnetron sputter, is evacuated to 10-3～10-4Pa, passes into nitrogen, regulates operating air pressure 0～10Pa, sputtering power 100W, and the thickness of sputtering TaN strained layer 5 is to 100～400nm；
Step 6: spin coating photoresist on the component complete above-mentioned steps, utilizes strained layer mask plate to carry out UV exposure, development；
Step 7: utilize ion etching, sputtering has formation strained layer figure on the sandwich structure composite strain layer component of TaN strained layer 3, PaCr strained layer 4 and TaN strained layer 5 after development；
Step 8: utilize acetone to wash away photoresist, deionized water cleans, dry；
Step 9: again completing the component surface spin coating photoresist of above-mentioned steps, utilize electrode layer mask plate to carry out UV exposure, development；
Step 10: completing the component surface magnetron sputtering Pt electrode 7 of above-mentioned steps, take out base vacuum to 10-3～10-4Pa, passes into Ar gas, and adjustment operating air pressure is 0～10Pa, and sputtering power is 100～400W；
Step 11: utilize acetone to wash away photoresist, deionized water cleans, dry；
Step 12: put in double ion beam sputtered machine by the component completing above-mentioned steps, uses high-purity sapphire target, is extracted into base vacuum 10-3～10-4Pa, passes into Ar gas and O2Gas, regulating operating air pressure is 10-2Pa, the aluminium oxide of sputtering sedimentation 1～2 μ m thick or silicon oxide protective layer 6；
Target used by deposition is 99.99% high-purity sapphire target；The Al:O stoichiometric proportion of described aluminium oxide or silicon oxide protective layer is 2:3.
In the present embodiment, described TaN strained layer 3, PaCr strained layer 4, TaN strained layer 5 film thickness can be adjusted as required.
The present invention utilizes double ion beam sputtered system film forming feature fine and close, uniform, and the alumina insulating film utilizing the method to prepare is applied to the high-temperature insulation of superalloy components substrate and strain strained layer.And the temperature resistance characteristic according to TaN and PaCr, is prepared for self-compensating high-temp strain strained layer.Processing technology of the present invention is simple, with low cost, strain gauge dependable performance, it is possible to solve at present the component strain worked in high temperature environments to be monitored predicament in real time that run into.
To sum up, the ion beam sputtering alumina insulating film that the present invention adopts, thickness is thin, dependable performance, and the impact of component can be ignored, it is adaptable to the real-time measurement in component work process；Adopt TaN and PaCr alloy strained layer, made by auto-compensation the temperature coefficient TCR of resistance of strain gauge close to 0, overcome the variations in temperature impact on component strain measurement, make high temperature measurement precision be greatly improved；Adopt ion beam sputtering aluminium oxide or silicon oxide protective layer compact structure, adhesion good, functional structure is served extraordinary protective effect.
Above specific embodiments of the invention are described.It is to be appreciated that the invention is not limited in above-mentioned particular implementation, those skilled in the art can make various deformation or amendment within the scope of the claims, and this has no effect on the flesh and blood of the present invention.

Claims (10)

1.一种高温自补偿多层复合薄膜应变计，其特征在于，所述应变计包括高温合金构件基底(1)、氧化铝绝缘层(2)、第一TaN应变层(3)、PaCr应变层(4)、第二TaN应变层(5)、氧化铝或氧化硅保护层(6)和Pt电极(7)，其中：氧化铝绝缘层(2)沉积于高温合金构件基底(1)上；第一TaN应变层(3)沉积于氧化铝绝缘层(2)上；PaCr应变层(4)沉积于第一TaN应变层(3)上；第二TaN应变层(5)沉积于PaCr应变层(4)上；氧化铝或氧化硅保护层(6)覆盖于第二TaN应变层(5)之上；Pt电极(7)沉积于氧化铝绝缘层(2)上并以侧壁同时与第一TaN应变层(3)、PaCr应变层(4)、第二TaN应变层(5)和氧化铝或氧化硅保护层(6)相连，同时Pt电极(7)的上表面暴露于氧化铝或氧化硅保护层(6)之外用于引线。1. A high-temperature self-compensating multilayer composite film strain gauge is characterized in that, said strain gauge comprises superalloy member substrate (1), aluminum oxide insulating layer (2), the first TaN strain layer (3), PaCr strain gauge layer (4), second TaN strain layer (5), aluminum oxide or silicon oxide protective layer (6) and Pt electrode (7), wherein: aluminum oxide insulating layer (2) is deposited on the superalloy component substrate (1) ; The first TaN strained layer (3) is deposited on the alumina insulating layer (2); the PaCr strained layer (4) is deposited on the first TaN strained layer (3); the second TaN strained layer (5) is deposited on the PaCr strained layer (4); the aluminum oxide or silicon oxide protection layer (6) covers the second TaN strain layer (5); the Pt electrode (7) is deposited on the aluminum oxide insulating layer (2) and is connected with the The first TaN strained layer (3), the PaCr strained layer (4), the second TaN strained layer (5) are connected to the aluminum oxide or silicon oxide protective layer (6), and the upper surface of the Pt electrode (7) is exposed to the aluminum oxide Or the silicon oxide protective layer (6) is used for lead wires. 2.根据权利要求1所述的一种高温自补偿多层复合薄膜应变计，其特征在于，所述的应变计在高温合金构件基底(1)上原位制备，高温合金构件基底(1)的应用温度在500～1200℃。2. A kind of high-temperature self-compensating multilayer composite film strain gauge according to claim 1, characterized in that, the strain gauge is prepared in situ on the superalloy member substrate (1), and the superalloy member substrate (1) The application temperature is 500～1200℃. 3.根据权利要求1所述的一种高温自补偿多层复合薄膜应变计，其特征在于，所述的第一TaN应变层(3)、PaCr应变层(4)和第二TaN应变层(5)中，PaCr应变层(4)位于第一TaN应变层(3)和第二TaN应变层(5)中间，第一TaN应变层(3)、PaCr应变层(4)和第二TaN应变层(5)共同形成三明治结构的复合应变层，即组成自补偿应变层，用以消除电阻温度效应。3. a kind of high-temperature self-compensating multilayer composite film strain gauge according to claim 1, is characterized in that, described first TaN strain layer (3), PaCr strain layer (4) and the second TaN strain layer ( 5), the PaCr strained layer (4) is located between the first TaN strained layer (3) and the second TaN strained layer (5), the first TaN strained layer (3), the PaCr strained layer (4) and the second TaN strained layer The layers (5) together form a composite strain layer of a sandwich structure, that is, form a self-compensating strain layer to eliminate the temperature effect of resistance. 4.一种权利要求1-3任一项所述的高温自补偿多层复合薄膜应变计的制备方法，其特征在于，所述方法包括如下步骤：4. a preparation method of the high-temperature self-compensating multilayer composite film strain gauge described in any one of claims 1-3, is characterized in that, described method comprises the steps: 步骤1、清洗高温合金构件基底(1)；Step 1, cleaning the substrate of the superalloy component (1); 步骤2、用双离子束溅射机，在高温合金构件基底(1)上溅射沉积氧化铝绝缘层(2)；Step 2, using a dual ion beam sputtering machine to sputter deposit an aluminum oxide insulating layer (2) on the superalloy component substrate (1); 步骤3、在完成步骤2的高温合金构件基底(1)上反应磁控溅射第一TaN应变层(3)；Step 3, reactive magnetron sputtering the first TaN strained layer (3) on the superalloy member substrate (1) that completed step 2; 步骤4、在完成步骤3的高温合金构件基底(1)上射频磁控溅射PaCr应变层(4)；Step 4, radio frequency magnetron sputtering PaCr strain layer (4) on the superalloy member substrate (1) that has completed step 3; 步骤5、在完成步骤4的高温合金构件基底(1)上反应磁控溅射第二TaN应变层(5)；Step 5, reactive magnetron sputtering the second TaN strain layer (5) on the superalloy component substrate (1) after completing step 4; 步骤6、在完成上述步骤的构件上旋涂光刻胶，利用应变层掩膜板进行UV曝光、显影；Step 6. Spin-coat photoresist on the components that have completed the above steps, and use a strained layer mask to perform UV exposure and development; 步骤7、利用离子刻蚀，在显影后溅射有第一TaN应变层(3)、PaCr应变层(4)和第二TaN应变层(5)的三明治结构复合应变层构件上形成应变层图形；Step 7, using ion etching to form a strained layer pattern on the sandwich structure composite strained layer member sputtered with the first TaN strained layer (3), PaCr strained layer (4) and the second TaN strained layer (5) after development ; 步骤8、利用丙酮洗去光刻胶，去离子水清洗，干燥；Step 8, using acetone to wash off the photoresist, washing with deionized water, and drying; 步骤9、再次在完成上述步骤的构件表面旋涂光刻胶，利用电极层掩膜板进行UV曝光、显影；Step 9. Spin-coat the photoresist on the surface of the component that has completed the above steps again, and use the electrode layer mask to perform UV exposure and development; 步骤10、在完成上述步骤的构件表面磁控溅射Pt电极(7)；Step 10, magnetron sputtering Pt electrode (7) on the surface of the component that has completed the above steps; 步骤11、利用丙酮洗去光刻胶，去离子水清洗，干燥；Step 11, using acetone to wash off the photoresist, washing with deionized water, and drying; 步骤12、利用双离子束溅射机，在完成上述步骤的构件表面溅射沉积氧化铝或氧化硅保护层(6)。Step 12, using a dual ion beam sputtering machine to sputter-deposit an aluminum oxide or silicon oxide protective layer (6) on the surface of the component that has completed the above steps. 5.根据权利要求4所述的一种高温自补偿多层复合薄膜应变计的制备方法，其特征在于，步骤2中，所述的氧化铝绝缘层(2)的厚度为2～4μm。5. The method for preparing a high-temperature self-compensating multilayer composite film strain gauge according to claim 4, characterized in that, in step 2, the thickness of the alumina insulating layer (2) is 2-4 μm. 6.根据权利要求4所述的一种高温自补偿多层复合薄膜应变计的制备方法，其特征在于，所述的氧化铝绝缘层(2)和所述的氧化铝或氧化硅保护层(6)沉积所用的靶材均为99.99％高纯蓝宝石靶。6. the preparation method of a kind of high-temperature self-compensating multilayer composite film strain gauge according to claim 4 is characterized in that, described aluminum oxide insulating layer (2) and described aluminum oxide or silicon oxide protection layer ( 6) The target materials used for deposition are all 99.99% high-purity sapphire targets. 7.根据权利要求4所述的一种高温自补偿多层复合薄膜应变计的制备方法，其特征在于，所述的氧化铝绝缘层(2)和所述的氧化铝或氧化硅保护层(6)的Al：O化学计量比为2：3。7. the preparation method of a kind of high-temperature self-compensating multilayer composite film strain gauge according to claim 4 is characterized in that, described aluminum oxide insulating layer (2) and described aluminum oxide or silicon oxide protection layer ( 6) The Al:O stoichiometric ratio is 2:3. 8.根据权利要求4所述的一种高温自补偿多层复合薄膜应变计的制备方法，其特征在于，步骤3中，所述的第一TaN应变层(3)的厚度为100～400nm；步骤5中，所述的第二TaN应变层(5)的厚度为100～400nm。8. The method for preparing a high-temperature self-compensating multilayer composite film strain gauge according to claim 4, characterized in that, in step 3, the thickness of the first TaN strain layer (3) is 100-400nm; In step 5, the thickness of the second TaN strained layer (5) is 100-400 nm. 9.根据权利要求4所述的一种高温自补偿多层复合薄膜应变计的制备方法，其特征在于，步骤4中，所述的PaCr应变层(4)的厚度为200～600nm。9. The method for preparing a high-temperature self-compensating multilayer composite film strain gauge according to claim 4, characterized in that, in step 4, the thickness of the PaCr strain layer (4) is 200-600 nm. 10.根据权利要求4所述的一种高温自补偿多层复合薄膜应变计的制备方法，其特征在于，步骤12中，所述的氧化铝或氧化硅保护层(6)的厚度为1～2μm。10. The preparation method of a kind of high-temperature self-compensating multilayer composite film strain gauge according to claim 4, characterized in that, in step 12, the thickness of the aluminum oxide or silicon oxide protective layer (6) is 1- 2 μm.
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