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CN105745339A - Silver alloy bonding wire and method for manufacturing same - Google Patents

Silver alloy bonding wire and method for manufacturing same Download PDF

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Publication number
CN105745339A
CN105745339A CN201480048613.0A CN201480048613A CN105745339A CN 105745339 A CN105745339 A CN 105745339A CN 201480048613 A CN201480048613 A CN 201480048613A CN 105745339 A CN105745339 A CN 105745339A
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CN
China
Prior art keywords
closing line
silver alloy
palladium
heat treatment
weight
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Pending
Application number
CN201480048613.0A
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Chinese (zh)
Inventor
金相烨
许永一
李钟哲
金承贤
文晶琸
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MK Electron Co Ltd
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MK Electron Co Ltd
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Publication of CN105745339A publication Critical patent/CN105745339A/en
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Powder Metallurgy (AREA)

Abstract

The present invention relates to a silver alloy bonding wire containing silver (Ag) as a main component, palladium (Pd), and gold (Au), and, more specifically, to an alloy bonding wire in which the palladium (Pd) content is 0.1 to 0.4 wt% and the weight content ratio of gold (Au) to palladium (Pd) is 0.25 to 1.0. The use of the silver alloy bonding wire of the present invention can improve the ball shape uniformity and the bonding ball shape of a ball which is formed on the tip of a wire and provide excellent reliability, loop linearity, and binding strength.

Description

Silver alloy closing line and manufacture method thereof
Technical field
The present invention relates to silver alloy closing line and manufacture method thereof, and relate more specifically to the silver alloy closing line of joint ball shape and spherical uniformity, excellent reliability, the weld-ring linearity (looplinearity) and the bond strength with the online most advanced and sophisticated upper ball formed of improvement and its manufacture method.
Background technology
There are the various package structures for mounting semiconductor, and closing line has been widely used for substrate being connected to semiconductor device or connecting multiple semiconductor device.Gold closing line has been widely used as closing line, but, they are expensive and become costly.Therefore, there is the demand to the closing line that can substitute for gold closing line.
Copper cash is concerned as the replacement material of gold (Au) line.But, due to the high rigidity that copper is intrinsic, wherein during ball bond, the pad fracture phenomena of wafer damage is likely to frequent generation.Additionally, due to the high rigidity of copper and high oxidation effect, it is impossible to solve stitch (stitch-on-bump) on the salient point that highly integrated packaging part needs and engage.
As the solution of problem above, research contains the silver (Ag) closing line as key component energetically.Although efforts have been made develop by by metal element alloyed to silver and other and there is the closing line of excellent properties, still have the space of a large amount of raising.
<prior art literature>
Korean patent publication 2007-0031998
Detailed Description Of The Invention
Technical problem
The invention provides the silver alloy closing line of the joint ball shape of the online most advanced and sophisticated upper ball formed with improvement and spherical uniformity, excellent reliability, the weld-ring linearity and bond strength.
The method that present invention provide for manufacturing silver alloy closing line, described silver alloy closing line has joint ball shape and spherical uniformity, excellent reliability, the weld-ring linearity and the bond strength of the online most advanced and sophisticated upper ball formed of improvement.
Technical scheme
According to an aspect of the present invention, thering is provided containing silver (Ag) as key component and the silver alloy closing line containing palladium (Pd) and gold (Au), wherein palladium (Pd) content can be about 0.1 weight % and can be about 0.25 to about 1.0 to the weight content ratio of about 4.0 weight % and gold (Au) and palladium (Pd).
The twin boundary of the crystal grain of silver alloy closing line can be about 2% to about 10%.
The weight content ratio of gold (Au) and palladium (Pd) can be about 0.4 to about 0.7.
Palladium (Pd) content can be about 1.5 weight % to about 3.5 weight %.
Silver alloy closing line can also comprise the component of one or more choosings freely element of the group of following composition: iridium (Ir), titanium (Ti), platinum (Pt), beryllium (Be), calcium (Ca), lanthanum (La), yttrium (Y), cerium (Ce), bismuth (Bi), cobalt (Co) and magnesium (Mg) are as Properties Control component, and wherein the content of Properties Control component can be about 3wtppm to about 5000wtppm.
Properties Control component can include platinum (Pt), and platinum (Pt) content is about 500wtppm to about 5000wtppm.
Properties Control component can be iridium (Ir) or titanium (Ti).
According to an aspect of the present invention, providing containing silver (Ag) as key component and the silver alloy closing line containing palladium (Pd) and gold (Au), wherein palladium (Pd) content is the twin boundary ratio of about 0.1 weight % to 4.0 weight % and crystal grain is about 2% to about 10%.
Silver alloy closing line can also comprise the component of one or more choosings freely element of the group of following composition as Properties Control component: iridium (Ir), titanium (Ti), platinum (Pt), beryllium (Be), calcium (Ca), lanthanum (La), yttrium (Y), cerium (Ce), bismuth (Bi), cobalt (Co) and magnesium (Mg), wherein the content of Properties Control component can be about 3wtppm to about 5000wtppm.
According to an aspect of the present invention, method for manufacturing silver alloy closing line is provided, described method includes manufacturing containing silver (Ag) as key component and the alloy sheet containing palladium (Pd) and gold (Au), wherein palladium (Pd) content is the weight content ratio of about 0.1 to 4.0 weight % and gold (Au) and palladium (Pd) is about 0.25 to about 1.0, carry out stretching and heat treatment with involutory gold plaque, wherein involutory gold plaque carries out stretching including with heat treatment: when wire diameter ranges for about 0.5mm to about 5mm, the fine rule obtained by stretching alloy sheet is carried out the first heat treatment, and the first heat treatment carries out about 0.5 second to about 5 seconds at the temperature of about 550 DEG C to about 700 DEG C.
Can carry out stretching with heat treatment so that the twin boundary rate of the crystal grain of silver alloy closing line ranges for about 2% to about 10%.
First heat treatment can carry out about 2 seconds to about 4 seconds at the temperature of about 600 DEG C to about 650 DEG C.
The fine rule carrying out stretching and heat treatment can also include obtaining by stretching alloy sheet carries out the second heat treatment when wire diameter ranges for about 0.05mm to about 0.4mm, and the second heat treatment can carry out about 0.5 second to about 5 seconds at the temperature of about 550 DEG C to about 700 DEG C.
Second heat treatment can carry out about 2 seconds to about 4 seconds at the temperature of about 600 DEG C to about 650 DEG C.
Beneficial effect
The silver alloy closing line of the use present invention can improve the joint ball shape of the online most advanced and sophisticated upper ball formed and spherical uniformity, and provides the reliability of excellence, the weld-ring linearity and bond strength.
Accompanying drawing explanation
Fig. 1 is the block diagram of the method for manufacturing the silver alloy closing line according to exemplary.
Fig. 2 A and 2B illustrates that the misorientation (misorientation) of exemplary 1 analyzes the result with twin boundary graphical analysis.
Fig. 3 A and 3B illustrates the misorientation analysis of comparative example 1 and the result of twin boundary graphical analysis.
Fig. 4 shows the first of the zygosity of the silver alloy closing line in order to check manufacture and engages the schematic side elevation that side and second engages the method for testing of side.
Best mode
The exemplary of present inventive concept is described in detail with reference to the accompanying drawings.But, present inventive concept is not limited to this, and it should be understood that, it is possible to make the spirit and scope being varied without departing from following claims in various forms and details wherein.That is, it is possible to the description providing ad hoc structure or function is used only for explaining the exemplary of present inventive concept.Similar accompanying drawing labelling refers to similar key element.Additionally, the various key elements schematically shown in accompanying drawing and region.Therefore, present inventive concept is not limited to the relative size shown in accompanying drawing or spacing.
Term is only used for describing various element herein such as " first " and " second ", but element is not limited by described term.This type of term is only used for a purpose element and another element distinguished.Such as, when without departing substantially from the interest field of present inventive concept, the first element can be referred to as the second element, and vice versa.
The term used in this manual is for explaining concrete exemplary, but is not used in restriction present inventive concept.Therefore, the expression used in the singular in this manual also includes the expression with its plural form, unless context specifies expressly otherwise.In addition, term such as " includes " or " including " can be construed to represent some feature, quantity, step, operation, element or their combination, but can be not construed as getting rid of the existence of the probability increasing one or more other features, quantity, step, operation, element or their combination.
Unless otherwise defined, whole terms used herein, including technology or scientific terminology, all there are those identical implications that the those of ordinary skill of the technical field belonging to being likely to present inventive concept is generally understood that.Term, those as defined in conventional dictionary, it is interpreted as having the implication matched with the implication in the context of correlation technique, and unless limited expressly otherwise, be not construed as ideal form or excessive form.
Present inventive concept discloses containing silver (Ag) as key component and the silver alloy closing line containing palladium (Pd) and gold (Au).Key component represents that in total component, the concentration of element is more than 50%.In other words, silver (Ag) represents that as key component the concentration of the silver in the total amount of silver and other elements is more than 50%.Concentration represents the concentration based on atomic molar number.
The content of palladium (Pd) can be about 0.1 weight % to about 4 weight %.If the content of palladium (Pd) is too low, acid-resisting becomes worse, thus silver alloy closing line is likely to easily by nitric acid or sulfuric acid corrosion or cut-out.Specifically, if without palladium, the antioxidation of silver alloy closing line dies down.If on the contrary, palladium content is too high, during wire bonding, the rigidity of the online most advanced and sophisticated ball formed excessively increases, thus pad and/or substrate below are likely to be broken.
Based on weight, gold (Au) can be about 0.25 to about 1.0 with the content ratio of palladium (Pd) (i.e. the ratio of [golden (Au) content]/[palladium (Pd) content]).The content of gold (Au) and palladium (Pd) is than preferably about 0.4 to about 0.7.
If gold (Au) is too low with the content ratio of palladium (Pd), the shape of the ball that closing line tip place is formed deviates from real spheroid, thus zygosity is likely to deterioration.Additionally, closing line surface is likely to easily oxidized and fades.
By contrast, if content ratio is too high, sphericity (character as the real ball) deterioration of the ball that closing line tip place is formed.Additionally, along with the rigidity of the ball of closing line tip place formation excessively increases, pad and/or substrate below are likely to be broken.
If additionally, the total content of palladium (Pd) and gold (Au) is excessive, resistance increases and therefore conductivity deterioration.
More than consideration, palladium (Pd) content can be about 0.1 weight % to about 4.0 weight %.Additionally, palladium content may be preferred that about 1.5 weight % to about 3.5 weight %.In this case, it is possible to determine gold (Au) content based on the content ratio between gold (Au) as above and palladium (Pd).
Twin boundary is by grain formation a kind of border and has the network forming mirror image.In detail, it is referred to as twin boundary relative to the border of its atomic arrangement in side and the formation mirror image of the atomic arrangement at opposite side.
When the ratio of twin boundary with the whole border formed by all crystal grains is high, the shape of the ball of formation is likely to deviate from real spheroid and what therefore high twin boundary ratio was not preferred.In detail, twin boundary can be about less than 10% with the ratio on the whole border formed by all crystal grains.The ratio on twin boundary and the whole border formed by all crystal grains can be about 2% to about 10%.
Twin boundary ratio can represent the ratio on border and the border formed by all crystal grains meeting the definition of above-mentioned twin boundary on closing line cross section.By using such as EBSD (electronbackscatterdiffraction, EBSD) equipment, it is possible to relatively easily measure twin boundary ratio.
The inventors found that, the ball shape of closing line and twin boundary rate have close relation, and also it is found that such problem: when twin boundary ratio exceedes about 10%, the sphericity of the ball that closing line tip place is formed deteriorates, and/or the first shape of looking squarely engaging side place joint deviates from proper circle shape or has colored shape.In other words, by by the twin boundary rate control in the cross section crystallographic structure of closing line about less than 10%, there is such effect: improve closing line tip place formed ball sphericity and first side place engage shape of looking squarely there is proper circle shape.
When manufacture silver alloy closing line with have about less than 2% twin boundary ratio time, it is possible to manufacturing cost can be improved.
Silver alloy closing line can also contain the component of one or more choosings freely type of the group of following composition as Properties Control component: iridium (Ir), titanium (Ti), platinum (Pt), beryllium (Be), calcium (Ca), lanthanum (La), yttrium (Y), cerium (Ce), bismuth (Bi), cobalt (Co) and magnesium (Mg).Properties Control component can be added to improve performance, such as high temperature reliability, high humidity reliability, zygosity, percentage elongation standard deviation etc..
The content of Properties Control component can be about 3 weight (wt) ppm to about 5000wtppm.If Properties Control constituent content is too low, it is possible to can not get required performance and improve.If additionally, Properties Control constituent content is too high, resistance increases, and it is economically disadvantageous.
Specifically, according to exemplary, Properties Control component can be platinum (Pt).The content of platinum (Pt) can be about 500wtppm to about 5000wtppm.
Alternatively, according to another exemplary, Properties Control component can be iridium (Ir) and/or titanium (Ti).The content of iridium (Ir) and/or titanium (Ti) can be about 500wtppm to about 5000wtppm.
Alternatively, according to another exemplary, Properties Control component substantially contains platinum (Pt), and also can contain iridium (Ir) and/or titanium (Ti).In this case, the summation of platinum (Pt) content and iridium (Ir) and/or titanium (Ti) content can be about 500wtppm to about 5000wtppm.
In the following description, the method describing silver alloy closing line for manufacturing the exemplary according to present inventive concept.Fig. 1 is the block diagram of the method for manufacturing the silver alloy closing line according to exemplary.
With reference to Fig. 1, the fusing in fusing stove of the metal material containing silver (Ag), gold (Au) and palladium (Pd), thus obtaining desired composition, is thus manufactured the alloy liquid (S1) of metal material.In this case, it is possible to add desilver (Ag), gold (Au) and palladium (Pd) Properties Control component outward.
Afterwards, the alloy liquid of metal material cooled down and solidifies, and therefore can obtain alloy sheet (S2) by forging and/or rolling.It follows that can first refine there is the diameter (S3) of about 6mm to about 9mm by alloy sheet.
It is refined first fine rule experience drawing process and the heat treatment (S4) with the diameter of about 6mm to about 9mm.Drawing process and heat treatment can include the process that refined gradually by the first fine rule and it is carried out heat treatment.In order to refine the first fine rule, the first fine rule is through multistage mould and the sectional area therefore reducing fine rule.
Specifically, in order to by twin boundary rate control about less than 10%, when wire diameter is about 0.5mm to about 5mm, the exemplary of the present invention can include carrying out the first heat treated process.First heat treatment can such as carry out about 0.5 second to about 5 seconds at the temperature of about 550 DEG C to about 700 DEG C.Specifically, the first heat treatment can carry out about 2 seconds to about 4 seconds at the temperature of about 600 DEG C to about 650 DEG C.
Optionally, in order to by twin boundary rate control within about 10%, when wire diameter is about 0.05mm to about 0.4mm, the exemplary of the present invention can further include and carries out the second heat treated process.Second heat treatment can such as carry out about 0.5 second to about 5 seconds at the temperature of about 550 DEG C to about 700 DEG C.Specifically, the second heat treatment can carry out about 2 seconds to about 4 seconds at the temperature of about 600 DEG C to about 650 DEG C.
It will appreciated by the skilled person that wire diameter along with fine rule sequentially passes through multiple moulds and reduce.In other words, wire diameter is arranged such that along with fine rule sequentially passes through multiple moulds that hole dimension is gradually lowered reduce.
When wire diameter is in respective range, it is possible to carry out above heat treatment between some mould.In other words, when wire diameter is about 0.5mm to about 5mm, it is possible to carry out the first heat treatment between certain two mould.When wire diameter is about 0.05mm to about 0.4mm, it is possible to carry out the second heat treatment between certain two mould.
The sectional area of line is reduced, until had the closing line of required diameter by drawing process manufacture by continuously elongated fine rule.The reduction of closing line area before and after mould can be adjusted to about 7% to about 15%.In other words, when the line in drawing process is through certain mould, described process may be configured so that, compared with the sectional area before mould, the sectional area after mould reduces about 7% to about 15%.Specifically, it is possible to will regulate to about 7% to about 15% with the reduction rate with the area of closing line in the process of less than about 50 μm diameters at stretching fine rule.
If the reduction rate of the area of closing line is too high, in closing line, the distribution of sizes of crystal grain is likely to excessive.If additionally, the area reduction rate of closing line is too low, it is thus achieved that the quantity of the drawing process needed for the closing line of required diameter excessively increases, and it is economically disadvantageous.
Alternatively, in order to regulate percentage elongation, it is possible to be additionally annealed (S5) after drawing process completes.Although the annealing conditions regulating percentage elongation is likely to change according to the condition such as fine rule composition, area reduction rate, heat treatment, annealing can carry out about 1 second to about 20 minutes at about 400 DEG C of temperature with 600 DEG C, and those of ordinary skill in the art can properly select concrete annealing conditions.
If annealing temperature is too low, engages the required ductility (ductility) of bonding and malleability (malleability) is likely to can not be guaranteed.If on the contrary, annealing temperature is too high, the size of crystal grain is likely to defect that is excessive and that be likely to produce such as weld-ring sagging (sagging) during engaging bonding.
If additionally, annealing time is too short, ductility and malleability that processing is required are likely to can not be guaranteed.If on the contrary, annealing time is long, the size of crystal grain is likely to excessive, and it is probably economically disadvantageous.
Can such as by closing line being annealed process through stove with suitable speed.Furthermore, it is possible to determined the closing line speed through stove by the size of annealing time and stove.
The mode of inventive concept
Although following structure and the effect describing present inventive concept by detailed exemplary and comparative example, it will be understood that embodiment is only illustrative meaning rather than for purposes of limitation.In following exemplary embodiment and comparative example, evaluate physical property by methods as described below.
[spherical uniformity]
By using 5%H2+N2The tip with the closing line of 20 μ m diameter is made the ball with 2WD (diameter of the twice of the diameter of line) as protective gas and catches their image afterwards and measure the degree of deviation with proper circle by gas.The degree of deviation with proper circle is quantified by the difference being expressed as a percentage between the short axle of ball and ratio and 1 of major axis.
When quantized value is less than 2%, spherical uniformity is be evaluated as ◎.When quantized value is equal to or more than 2% and during less than 5%, spherical uniformity is be evaluated as O.When quantized value is equal to or more than 5% and during less than 8%, spherical uniformity is be evaluated as Δ.When quantized value is equal to or more than 8%, spherical uniformity is be evaluated as X.
[joint ball shape]
Use 5%H2+N2The tip with the closing line of 20 μ m diameter is made the ball with 2WD (diameter of the twice of the diameter of line) as protective gas and is bonded on pad by gas.Afterwards, whether observing the ratio of horizontal direction and the longitudinal direction length recorded close to 1, whether closing line is positioned at the center of ball, and whether whether edge be the smooth of proper circle form, or exist as petal sweep.
When determining that the ratio engaging the horizontal direction of ball and longitudinal direction length is equal to or more than 0.99, closing line is positioned at the center of ball, and edge be proper circle rather than petal time, this joint ball shape is be evaluated as ◎.When determining that the ratio engaging the horizontal direction of ball and longitudinal direction length is equal to or more than 0.96 and less than 0.99, closing line is positioned at the center of ball, and edge be proper circle rather than petal time, this joint ball shape is be evaluated as O.When determining that the ratio engaging the horizontal direction of ball and longitudinal direction length is equal to or more than 0.9, edge is absent from petal and engages ball shape when not corresponding to ◎ or O, engages ball shape and is be evaluated as Δ.Otherwise, engage ball shape and be evaluated as X.
[high temperature reliability]
By measuring the packaging part of heating epoxy moulding resin encapsulating at 175 DEG C of temperature after wire bonding until there is the persistent period disconnected on composition surface, evaluate high temperature reliability.If when disconnect in composition surface occur time be 500 little time more than, it is be evaluated as ◎.If when disconnect in composition surface occur time be 384 little time less than 500 little time, it is be evaluated as O.If when disconnect in composition surface occur time be 192 little time less than 384 little time, it is be evaluated as Δ.If when the time that disconnection occurs in composition surface is little less than 192, it is be evaluated as X.
[high humidity reliability]
By being maintained under the temperature of 121 DEG C and the humidity of 85% by the packaging part encapsulated with epoxy moulding resin after measuring wire bonding until there is the persistent period disconnected on composition surface, evaluate high humidity reliability.If when disconnect in composition surface occur time be 192 little time more than, it is be evaluated as ◎.If when disconnect in composition surface occur time be 168 little time less than 192 little time, it is be evaluated as O.If when disconnect in composition surface occur time be 96 little time less than 168 little time, it is be evaluated as △.If when the time that disconnection occurs in composition surface is little less than 96, it is be evaluated as X.
[thermal shock reliability]
Commercially available thermal cycle test (TCT) equipment is used to determine thermal shock reliability.After wire bonding, closing line is by epoxy molding compound (EMC) encapsulating, under harsh conditions (from-45 DEG C/30 minutes to+125 DEG C/30 minutes), repeatedly apply thermal shock, then measure the quantity of the closing line damaged due to shrink/expanded.If not having line loss bad in 6000 lines, then it is evaluated as ◎.If the quantity of the line damaged then is evaluated as O between being 1 to 4.If the quantity of the line damaged then is evaluated as △ between being 5 to 19.If the quantity of the line damaged is more than 20, then it is evaluated as X.
[the weld-ring linearity]
By carrying out ball bond and form salient point on the side with spaced two row's pads of 120 μm.On relative side, carry out ball bond subsequently, and while forming weld-ring, salient point is carried out stitch bond.
Afterwards, the interval between the position measurement ring that interval between ring is minimum wherein, and the representative value at the interval that the interval recorded is defined as between ring.When interval between ring as determined above is 111 μm to 125 μm, the weld-ring linearity is be evaluated as ◎.When interval between ring as determined above is equal to or more than 105 μm and less than 111 μm, the weld-ring linearity is be evaluated as O.When interval between ring as determined above is less than 105 μm, the weld-ring linearity is be evaluated as △.
[BPT (joint pull-out test) and SPT (stitch pull-out test)]
As shown in FIG. 4, by using the pad 20 that the pad 10 at the first joint side place is engaged side place by the silver alloy closing line manufactured with second to be engaged with each other.In other words, form ball at the tip of silver alloy closing line 100, and the first pad 10 engaging side place is carried out ball bond.Afterwards, the second pad 20 engaging side place is carried out stitch bond.
In this case, will be close to a part of drawing of the first joint side with the vertically upward direction such as pointed out by arrow A, and evaluate when first engages the load (BPT) when separating.Additionally, will be close to a part of drawing of the second joint side by arrow B with the vertically upward direction such as pointed out, and evaluate when second engages the load (SPT) when separating.
Prepared by 2000 samples for each in exemplary and comparative example.1000 samples are carried out BPT and another 1000 samples are carried out SPT.As shown in Table 1, obtain and determine the meansigma methods measuring load.
[table 1]
Determine BPT load (g) SPT load (g)
Equal to or more than 7.5g Equal to or more than 6.5g
O Equal to or more than 7.0g and less than 7.5g Equal to or more than 6.0g and less than 6.5g
Equal to or more than 6.0g and less than 7.0g Equal to or more than 5.0g and less than 6.0g
X Less than 6.0g Less than 5.0g
[BST (ball shearing test)]
As shown in Figure 4, by using the pad 20 that the pad 10 at the first joint side place is engaged side place by the silver alloy closing line manufactured with second to be engaged with each other.
Afterwards, by shearing force to be laterally applied to the first bonding part, and evaluate when first engages load when separating.
Prepared by 1000 samples for each in exemplary and comparative example, and this sample is carried out BST.As shown in Table 2, obtain and determine the meansigma methods measuring load.
[table 2]
Determine BST load (g)
Equal to or more than 26g
O Equal to or more than 21g and less than 26g
Equal to or more than 15g and less than 21g
X Less than 15g
<exemplary 1-4>
After manufacturing the ingot bar having formed as shown in table 3 below, manufacture the closing line with 20 μ m diameter by the ingot bar manufactured being carried out the first heat treatment and the second heat treatment and stretching.First heat treatment temperature and the second heat treatment temperature are shown below in 3.When diameter is 0.5mm to 0.08mm, carry out above heat treatment each 3 seconds.
<comparative example 1>
After manufacturing the ingot bar having formed as shown in table 3 below, manufacture the closing line with 20 μ m diameter by the ingot bar manufactured being carried out the first heat treatment and the second heat treatment and stretching.First heat treatment temperature and the second heat treatment temperature are shown below in 3.When diameter is 8mm to 0.08mm, carry out above heat treatment each 3 seconds.
The above sample of exemplary 1 to exemplary 4 manufactured and the sample of comparative example 1 are carried out twin boundary analysis.By using EBSD (EBSD) equipment and the JEOLJSM-6500 equipment equipped with HKLCHANNEL5 software to carry out twin boundary analysis.In this case, inclination angle is 70 °, and grain boundary standard is the region of the grain orientation difference with more than 15 °, and measuring process is set as relative to 0.05 μm of surface and relative to 0.2 μm, longitudinal cross-section.
Fig. 2 A and 2B illustrates the misorientation analysis of exemplary 1 and the result of twin boundary graphical analysis.Fig. 3 A and 3b illustrates the misorientation analysis of comparative example 1 and the result of twin boundary graphical analysis.
[table 3]
As shown in above table, it can be seen that when twin boundary rate is more than 10%, spherical uniformity and joint ball shape somewhat deteriorate.In addition, it is seen that high temperature reliability deteriorates relatively, it seems to come from that the deterioration engaging ball shape.
<exemplary 5-10 and comparative example 2-4>
As shown in Table 4, by changing the composition manufacture closing line of palladium (Pd) and gold (Au).To measure twin boundary ratio and other physical properties with those the identical methods for foregoing exemplary embodiment 1-4 and comparative example 1.Table 5 illustrates their result.
[table 4]
[table 5]
As shown in table 4 and 5, it can be seen that when twin boundary rate is equal to or less than 10%, spherical uniformity is relative excellent with engaging ball shape.In addition, it can be seen that, when palladium (Pd) content more than the content ratio of 4 weight % or gold (Au)/palladium (Pd) more than 1 time, although twin boundary rate is equally likely to or less than 10% (comparative example 3 and comparative example 4), physical property is deterioration such as spherical uniformity and thermal shock reliability.
<exemplary 11-18 and comparative example 5-10>
As shown in Table 6, by changing the composition of palladium (Pd) and golden (Au) and being added thereto to Properties Control component and manufacture closing line.To measure twin boundary ratio and other physical properties with those the identical methods for foregoing exemplary embodiment 1-4 and comparative example 1.Table 7 illustrates their result.
[table 6]
[table 7]
As shown in Table 7, it can be seen that when twin boundary ratio is more than 10%, spherical uniformity and joint ball shape are more worse than the situation that wherein twin boundary rate equals to or less than 10%.Additionally, high temperature reliability, high humidity reliability and thermal shock reliability are generally likely to deterioration, this is because spherical uniformity and/or joint ball shape deterioration.
Additionally, not only the weld-ring linearity but also performance such as BPT, SPT and BST also generally deteriorate, even and if this deterioration can not be solved when being added thereto to Properties Control component.Additionally, in exemplary 11,12 and 14-16, analysis draws, improve performance such as thermal shock reliability, the weld-ring linearity and/or BPT by adding the Properties Control component of about 500wtppm to about 5000wtppm.
Although use particular term be specifically illustrated in and describe present inventive concept with reference to preferred embodiment, it will be understood that embodiment and term are only illustrative meanings rather than for purposes of limitation.Therefore, it will be recognized by those of ordinary skill in the art that the various changes can made wherein in form and details, without deviating from the spirit and scope of the present inventive concept being determined by the claims that follow.
Industrial applicibility
Present inventive concept may be used for semi-conductor industry.

Claims (14)

1. a silver alloy closing line, described silver alloy closing line contains silver (Ag) as key component and containing palladium (Pd) and gold (Au), wherein palladium (Pd) content is about 0.1 weight % to about 4.0 weight %, and the weight content ratio of gold (Au) and palladium (Pd) is about 0.25 to about 1.0.
2. silver alloy closing line according to claim 1, wherein the twin boundary of crystal grain is about 2% to about 10%.
3. silver alloy closing line according to claim 1, wherein gold (Au) is about 0.4 to about 0.7 with the weight content ratio of palladium (Pd).
4. silver alloy closing line according to claim 3, wherein palladium (Pd) content is about 1.5 weight % to about 3.5 weight %.
5. silver alloy closing line according to claim 1, described silver alloy closing line also comprises the component of one or more choosings freely element of the group of following composition as Properties Control component: iridium (Ir), titanium (Ti), platinum (Pt), beryllium (Be), calcium (Ca), lanthanum (La), yttrium (Y), cerium (Ce), bismuth (Bi), cobalt (Co) and magnesium (Mg)
The content of wherein said Properties Control component is about 3wtppm to about 5000wtppm.
6. silver alloy closing line according to claim 5, wherein said Properties Control component includes platinum (Pt), and platinum (Pt) content is about 500wtppm to about 5000wtppm.
7. silver alloy closing line according to claim 5, wherein said Properties Control component is iridium (Ir) or titanium (Ti).
8. a silver alloy closing line, described silver alloy closing line contains silver (Ag) as key component and containing palladium (Pd) and gold (Au), wherein palladium (Pd) content is about 0.1 weight % to 4.0 weight %, and the twin boundary rate of crystal grain is about 2% to about 10%.
9. silver alloy closing line according to claim 8, described silver alloy closing line also comprises the component of one or more choosings freely element of the group of following composition as Properties Control component: iridium (Ir), titanium (Ti), platinum (Pt), beryllium (Be), calcium (Ca), lanthanum (La), yttrium (Y), cerium (Ce), bismuth (Bi), cobalt (Co), magnesium (Mg)
The content of wherein said Properties Control component is about 3wtppm to about 5000wtppm.
10. the method for manufacturing silver alloy closing line, described method includes:
Manufacture containing silver (Ag) as key component and the alloy sheet containing palladium (Pd) and gold (Au), wherein palladium (Pd) content is about 0.1 to 4.0 weight %, and the weight content ratio of gold (Au) and palladium (Pd) is about 0.25 to about 1.0;With
Described alloy sheet is stretched and heat treatment,
Wherein said described alloy sheet is stretched and heat treatment includes:, the fine rule obtained by stretching described alloy sheet is carried out the first heat treatment when wire diameter ranges for about 0.5mm to about 5mm, and
Wherein said first heat treatment carries out about 0.5 second to about 5 seconds at the temperature of about 550 DEG C to about 700 DEG C.
11. method according to claim 10, wherein carry out described stretching and described heat treatment so that the twin boundary rate of crystal grain of described silver alloy closing line ranges for about 2% to about 10%.
12. method according to claim 10, wherein said first heat treatment carries out about 2 seconds to about 4 seconds at the temperature of about 600 DEG C to about 650 DEG C.
13. method according to claim 10, wherein said carry out stretching and heat treatment also includes: carry out the second heat treatment to passing through to stretch the fine rule that obtains of described alloy sheet when wire diameter ranges for about 0.05mm extremely about 0.4mm, and
Described second heat treatment carries out about 0.5 second to about 5 seconds at the temperature of about 550 DEG C to about 700 DEG C.
14. method according to claim 13, wherein said second heat treatment carries out about 2 seconds to about 4 seconds at the temperature of about 600 DEG C to about 650 DEG C.
CN201480048613.0A 2013-09-04 2014-09-04 Silver alloy bonding wire and method for manufacturing same Pending CN105745339A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107299245A (en) * 2017-06-19 2017-10-27 河北德田半导体材料有限公司 Semiconductor-sealing-purpose silver alloy wire and preparation method thereof
CN108062991A (en) * 2016-11-08 2018-05-22 光大应用材料科技股份有限公司 silver alloy wire

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101678806B1 (en) * 2014-07-10 2016-11-23 신닛테츠스미킹 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device
KR101687598B1 (en) * 2015-05-07 2016-12-20 엠케이전자 주식회사 Silver alloy bonding wire and manufacturing method thereof
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102154574A (en) * 2010-10-18 2011-08-17 东莞市正奇电子有限公司 Alloy wire for connecting semiconductor components
CN102592700A (en) * 2011-07-11 2012-07-18 大瑞科技股份有限公司 Composite silver wire
CN103184362A (en) * 2012-01-02 2013-07-03 乐金股份有限公司 Alloy wire and method for producing same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4247863B2 (en) * 1999-07-12 2009-04-02 ソニー株式会社 Metal materials for electronic components, wiring materials for electronic components, electrode materials for electronic components, electronic components, electronic equipment, processing methods for metal materials, and electro-optical components
KR101001700B1 (en) * 2007-03-30 2010-12-15 엠케이전자 주식회사 Silver Alloy Wire for Semiconductor Package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102154574A (en) * 2010-10-18 2011-08-17 东莞市正奇电子有限公司 Alloy wire for connecting semiconductor components
CN102592700A (en) * 2011-07-11 2012-07-18 大瑞科技股份有限公司 Composite silver wire
CN103184362A (en) * 2012-01-02 2013-07-03 乐金股份有限公司 Alloy wire and method for producing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108062991A (en) * 2016-11-08 2018-05-22 光大应用材料科技股份有限公司 silver alloy wire
CN107299245A (en) * 2017-06-19 2017-10-27 河北德田半导体材料有限公司 Semiconductor-sealing-purpose silver alloy wire and preparation method thereof

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