CN105742390A - Laminated thin film solar battery and preparation method thereof - Google Patents
Laminated thin film solar battery and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 17
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 16
- 229910052738 indium Inorganic materials 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 4
- 239000011888 foil Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000010549 co-Evaporation Methods 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 2
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- 238000005215 recombination Methods 0.000 abstract 1
- 239000011669 selenium Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 229910004611 CdZnTe Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910000807 Ga alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
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- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910017612 Cu(In,Ga)Se2 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明公开了一种叠层薄膜太阳能电池，包括衬底和依次设置于衬底上的背电极、底电池、顶电池和窗口层，底电池和顶电池之间设有隧道结，隧道结包括n+型半导体层和p+型半导体层，n+型半导体层与底电池的n型半导体层接触，p+型半导体层与顶电池的p型半导体层接触；同时还提供了上述结构的制备方法，本发明在底电池和顶电池间利用隧道结的形式连接，实现两电池间的导电连接，相对机械叠层的方式更便于调节光学透过和电阻率。同时，本发明采用合适的隧道结实现叠层的连续生长，相对于机械叠层的方法减少工艺步骤，并增加了电池的可靠性，提升整体电池效率，可以减弱载流子界面复合。
The invention discloses a stacked thin film solar cell, which comprises a substrate, a back electrode, a bottom cell, a top cell and a window layer sequentially arranged on the substrate, a tunnel junction is arranged between the bottom cell and the top cell, and the tunnel junction includes The n+ type semiconductor layer and the p+ type semiconductor layer, the n+ type semiconductor layer is in contact with the n type semiconductor layer of the bottom cell, and the p+ type semiconductor layer is in contact with the p type semiconductor layer of the top cell; meanwhile, the preparation method of the above structure is also provided, the present invention The bottom cell and the top cell are connected in the form of a tunnel junction to realize the conductive connection between the two cells, which is easier to adjust the optical transmission and resistivity than the mechanical stacking method. At the same time, the present invention uses a suitable tunnel junction to realize the continuous growth of the stack, which reduces the process steps compared with the mechanical stacking method, increases the reliability of the battery, improves the overall battery efficiency, and can weaken the interface recombination of carriers.
Description
Technical field
The present invention relates to technical field of thin-film solar, be specifically related to a kind of overlapping thin film solar battery and preparation method thereof.
Background technology
In order to widen the absorption region of solar cell material, usually adopt the solar energy materials laminated construction of different band gap.Solar spectrum can be regarded as some sections, use low bandgap material to absorb long-wave band, use wide bandgap material to absorb for short-wave band, it is possible to be greatly improved performance and stability.
For hull cell, the laminated construction of growth is mainly used on silica-based and the solaode of III-V continuously.Wherein the world record of silica-based lamination solar cell is kept by LG company, and basic structure is a-Si:H/nc-Si:H/nc-Si:H, has been achieved with the electricity conversion of 13.4% at present；The laminated cell world record of III-V is the InGaP/GaAs/InGaAs battery of sharp company, and when 302 times of optically focused, electricity conversion reaches 44.4%.And restriction growth laminated construction main factor for development continuously has Cu (In, Ga) Se in copper-indium-galliun-selenium film solar cell2Band gap limit in 1.04-1.67ev scope and can not be directly applied in many sub-batteries.Even if by the CuGaSe of broad-band gap2As top battery, due to Cu (In, Ga) Se2The defect of self, adopts common CVD and PVD mode to can be only formed p-type semiconductor layer, be difficult to by mix other elements carry out highly doped formation p+ type semiconductor layer, so being hardly formed with Cu (In, Ga) Se2Tunnel knot.
So, the conventional patent documentation of current lamination copper-indium-galliun-selenium film solar cell is mainly mechanical laminated mode, such as patent CN101097968A.By two independent one broad-band gaps of solaode, a narrow band gap, the mode of bonding is used to press together formation laminated construction.Band gap respectively 1.7ev and the 1.0ev of general top battery and end battery.Although mechanical laminated mode can realize the light of the solar energy materials absorption different-waveband of different band gap, but there is great limitation, such as jointing material will certainly absorb the sunlight of a part, causing certain optical loss, the long-time stability of whole battery be will also result in some risks by the mode of this bonding.The sealant used in CN101097968A is as the connection of top layer and bottom cell, and transmitance can be poor, and the life-span is relatively low.Additionally, due to coupling part is non-conductive, it is necessary to extra extraction electrode again, too increasing the risk of contact resistance and loose contact, solaode is sensitive to temperature and material cross-contamination simultaneously, so being not suitable for Direct precipitation top battery on end battery.
Additionally, also have an other patent to refer to the laminated construction of growth continuously, such as CN102945893A refer to employing nanometer metallic film and transparent metal oxide combination of electrodes.Nanometer metallic film cannot well regulate electric current by the problem with light penetration.
Summary of the invention
For this, present invention aim at providing a kind of overlapping thin film solar battery and preparation method thereof, by suitable tunnel knot material and film layer structure, it is achieved the overlapping thin film solar battery of growth continuously, promote integral battery door performance.
Adopted technical scheme is as described below:
On the one hand, the invention provides a kind of overlapping thin film solar battery, a kind of overlapping thin film solar battery, including back electrode, end battery, top battery, Window layer and front electrode that substrate and being sequentially overlapped is arranged on described substrate, being provided with tunnel knot between battery of the described end and top battery, the band gap of battery of the described end is less than the band gap of described top battery；Described end battery and top battery form by p-type semiconductor layer and n-type semiconductor layer, described tunnel knot includes n+ type semiconductor layer and p+ type semiconductor layer, described n+ type semiconductor layer contacts with the n-type semiconductor layer in battery of the described end, and described p+ type semiconductor layer contacts with the p-type semiconductor layer of described top battery.
Described tunnel knot is made up of wide bandgap material, and its doping content is more than the doping content of absorbed layer in described top battery and end battery.
P+-Cd is become in described tunnelxZn1-xTe and n+-CdS, wherein x=0-1, its thickness is 10-50nm.
The Cu that absorbed layer band gap is 1.0-1.2eV (In, the Ga) Se of battery of the described end2, the CdxZn that absorbed layer band gap is 1.6-1.8eV of described top battery1-xTe。
Described substrate is flexible substrate.
Described substrate is metal foil substrate or polyimide substrate.
First window layer that described Window layer is made up of the semi-conducting material of broad-band gap and the second Window layer, described first window layer is arranged on the battery of described top, it is the metal conductive oxide layer of intrinsic, described second Window layer is arranged on described first window layer, and it is the composite conductive layers of n-type doping.
On the other hand, the preparation method that present invention also offers a kind of overlapping thin film solar battery, specifically include following steps:
Step one, forms back electrode by magnetically controlled sputter method on substrate；
Step 2, forms the p-type semiconductor layer of end battery on back electrode by the method for magnetron sputtering or coevaporation；
Step 3, in the p-type semiconductor layer of end battery, forms the n-type semiconductor layer of end battery by the method for magnetron sputtering or chemical bath；
Step 4, in the n-type semiconductor layer of end battery, is grown formation n+ type semiconductor layer and p+ type semiconductor layer successively, obtains tunnel knot by a kind of mode in magnetron sputtering, CVD or MBE (molecular beam epitaxy)；
Step 5, at tunnel junctions, grows p-type semiconductor layer and the n-type semiconductor layer of top battery by a kind of mode in magnetron sputtering, CVD or MBE (molecular beam epitaxy)；
Step 6, forms intrinsic ZnO and ZnO:Al by the method for magnetron sputtering or CVD in the n-type semiconductor layer of top battery, obtains Window layer；
Step 7, forms front electrode by silk screen printing or the method with mask plating in Window layer.
Tunnel knot in described step 4 is made up of wide bandgap material, and its doping content is more than the doping content of absorbed layer in described top battery and end battery.
P+-Cd is become in described tunnelxZn1-xTe and n+-CdS, wherein x=0-1, its thickness is 10-50nm.
The Cu that absorbed layer band gap is 1.0-1.2eV (In, the Ga) Se of battery of the described end2, the Cd that absorbed layer band gap is 1.6-1.8eV of described top batteryxZn1-xTe。
Substrate in described step one is flexible substrate, first passes through magnetically controlled sputter method and forms barrier layer on flexible substrates, forms back electrode again through magnetically controlled sputter method on substrate.
In described step 4 and step 5, after the rete that employing MBE mode grows, carry out the annealing steps containing doped chemical again, namely under the atmosphere of doped chemical, anneal at 10 DEG C～150 DEG C.
The present invention has the advantages that relative to prior art
A. the present invention utilizes the form of tunnel knot to connect between end battery and top battery, it is achieved being conductively connected between the two, and the mode of relative mechanical lamination is more convenient for regulating optics and is passed through and resistivity.Meanwhile, the present invention adopts tunnel knot to realize the continuous growth of lamination, reduces processing step relative to mechanical laminated method, and adds the reliability of battery, promotes integral battery door efficiency；It addition, the tunnel knot that the present invention adopts p-type and n-type material can be regulated by doping content, it is possible to weaken carrier Interface composites.
B. the battery in the present invention is made up of the battery that band gap is different, and the band gap of top battery is more than the band gap of end battery, and its absorption region is bigger；Cell substrate adopts flexible substrate, can, by battery applications in curved surface, use wider.
Accompanying drawing explanation
In order to make present disclosure be more likely to be clearly understood, below according to specific embodiments of the invention and in conjunction with accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the overlapping thin film solar battery structural representation with tunnel knot provided by the present invention；
Fig. 2 is CIGS/CdZnTe laminated cell structural representation provided by the present invention.
In figure: 1-substrate；2-barrier layer；3-back electrode；Battery at the bottom of 4-, 41-p type semiconductor layer, 42-n type semiconductor layer；5-tunnel knot, 51-n+ type semiconductor layer, 52-p+ type semiconductor layer；6-pushes up battery, 61-p type semiconductor layer, 62-n type semiconductor layer；7-Window layer, 71-first window layer, 72-the second Window layer；8-front electrode.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
As shown in Fig. 1 structure, the invention provides a kind of overlapping thin film solar battery, including substrate 1 and the back electrode 3 being set in turn on substrate 1 from bottom to top, end battery 4, tunnel knot 5, top battery 6, Window layer 7 and front electrode 8, tunnel knot 5 includes n+ type semiconductor layer 51 and p+ type semiconductor layer 52, n+ type semiconductor layer 51 contacts with the n-type semiconductor layer 42 of end battery 4, and p+ type semiconductor layer 41 contacts with the p-type semiconductor layer 61 of top battery 6.
Wherein the doping content of tunnel knot 5 is more than the doping content in end battery 4 and top battery 6, and tunnel knot 5 forms for wide bandgap material；Preferably, tunnel knot 5 adopts p+-CdxZn1-xTe and n+-CdS, its thickness is 10-50nm.
In order to make laminated cell have more flexibility, in the present invention, substrate 1 is flexible substrate, and its thickness is 10～100 μm.Wherein preferably employing metal foil substrate or polyimide substrate, its thickness is 30-50 μm.
Wherein the thickness of end battery 4 is 0.5-3 μm, and its absorbed layer band gap is Cu (In, the Ga) Se of 1.0-1.2eV scope2；Top battery 6 thickness is 0.5-2 μm, and its absorbed layer band gap is at the CdxZn of 1.6-1.8eV scope1-xTe。
Additionally, first window layer 71 that Window layer 7 is made up of the semi-conducting material of broad-band gap and the second Window layer 72, first window layer 71 is arranged on the battery 6 of top, and it is the metal conductive oxide layer of intrinsic, the composite conductive layers that second Window layer 72 is adulterated for n-type, is arranged on first window layer 71.
As in figure 2 it is shown, for two junction batteries, top battery obsorbing layer is CdxZn1-xTe, x=0.6-0.7, end battery obsorbing layer is Cu (In, Ga) Se2.The manufacturing process of overlapping thin film solar battery is described below in detail.
Embodiment 1
[101] being formed back electrode 3 on substrate 1 by magnetically controlled sputter method, it prepares thickness is 500nm；
[102] on back electrode 3, the p-type semiconductor layer 41 of end battery 4, i.e. P type Cu (In, Ga) Se is formed by the method for magnetron sputtering or coevaporation2Semiconductor layer, its thickness is 500nm, and doping content is at 1x1017cm-3, band gap is 1.0eV, adopts Cu, In, Ga alloys target, forms p-type Cu (In, Ga) Se under air pressure 0.1Pa, Se atmosphere2Semi-conducting material absorbed layer, wherein Cu/ (In+Ga): Ga/ (In+Ga) of alloys target changes in gradient, it is possible to be optimized according to Technical expression.
[103] in the p-type semiconductor layer 41 of end battery 4, formed the n-type semiconductor layer 42 of end battery 4, i.e. n-type CdS cushion by the method for magnetron sputtering or chemical bath, adopt CdS target, at air pressure 0.1Pa, Ar, O2, H2Forming n-type CdS cushion under atmosphere, buffer layer thickness is 30nm.
[104] in the n-type semiconductor layer 41 of end battery 4, formation p+-CdxZn is grown successively by magnetron sputtering mode1-xTe and n+-CdS, obtains tunnel knot 5, and tunnel knot 5 thickness is 5nm；
[105] on tunnel knot 5, being grown p-type semiconductor layer 61 and the n-type semiconductor layer 62 of top battery 6 by magnetron sputtering mode, its thickness is 250nm；
[106] on the battery 6 of top, form intrinsic ZnO and ZnO:Al by magnetically controlled sputter method, obtain Window layer 7.Adopt ZnO and ZnO:Al target, form ZnO and ZnO:Al Window layer, its thickness respectively 200nm and 400nm under an ar atmosphere.
[107] in Window layer 7, front electrode 8, front electrode 8 thickness 20 μm are formed by silk screen printing or the method with mask plating, thus preparing CIGS/CdZnTe overlapping thin film solar battery.
Embodiment 2
[201] in the metal foil substrate 1 that thickness is 50 μm, by the method for magnetron sputtering, adopting metal titanium targets, be 10Pa at air pressure, process gas is argon, prepares the Titanium barrier layer 2 that thickness is 500nm.
[202] on Titanium barrier layer 2, by the method for magnetron sputtering, adopting molybdenum target, be 10Pa at air pressure, process gas is argon, prepares molybdenum that thickness is 700nm as back electrode 3.
[203] on back electrode 3, by the method for magnetron sputtering, adopt Cu, In, Ga alloys target, under air pressure 10Pa, Se atmosphere, form p-type Cu (In, Ga) Se2Semiconductor layer.Cu/ (In+Ga): Ga/ (In+Ga) of alloys target changes in gradient, it is possible to be optimized according to Technical expression.Cu(In,Ga)Se2Semiconductor material thicknesses is at 2000nm.Doping content is 1x1017cm-3, band gap is 1.2eV.
[204] in the p-type semiconductor layer 41 of end battery 4, CdS target is adopted, under air pressure 10Pa, Ar, O2、H2Form n-type semiconductor layer 42, i.e. n-type CdS cushion under atmosphere, cushion thickness 80nm.
[205] in the n-type semiconductor layer 42 of end battery 4, growing tunnel knot 5 by MBE mode, process atmospheric pressures is at 1x10-6Pa, technological temperature is 400 DEG C, first growth n+ type semiconductor layer 51, i.e. n+-CdS, and doped chemical is In, and doping content is 1 × 1018cm-3, thickness is 10nm；Then, under In atmosphere, anneal at 150 DEG C.
[206] in n+ type semiconductor layer 51, p+ type semiconductor layer 52 is grown by MBE mode, i.e. p+-CdxZn1-xTe, x=0.7, doped chemical is As, and doping content is 1 × 1019cm-3, thickness is 20nm, then under As atmosphere, anneals at 150 DEG C.
[207] on tunnel knot 5, p-type semiconductor layer 61 and the n-type semiconductor layer 62, p-Cd of top battery 6 is grown by MBE modexZn1-xTe, x=0.6, doped chemical As, doping content is 1 × 1018cm-3And n+-CdxZn1-xTe, x=0.6, doped chemical In, doping content is 1 × 1018cm-3, thickness is 750nm and 500nm respectively.
[208] by magnetically controlled sputter method on the battery 6 of top, adopt ZnO and ZnO:Al target, form ZnO and ZnO:Al Window layer 7 under an ar atmosphere.Thickness is 400nm, 600nm respectively.
[209] in Window layer 7, Cu front electrode 8, thickness of electrode 20 μm are formed by method for printing screen, thus preparing CIGS/CdZnTe overlapping thin film solar battery.
Embodiment 3
[301] at the bottom of the stainless steel lining that thickness is 40 μm 1, by the method for magnetron sputtering, adopting metal titanium targets, be 5Pa at air pressure, process gas is the Titanium barrier layer 2 that argon prepares that thickness is 400nm.
[302] on Titanium barrier layer 2, by the method for magnetron sputtering, adopting molybdenum target, be 5Pa at air pressure, process gas is that argon prepares molybdenum that thickness is 600nm as back electrode 3.
[303] on back electrode 3, by the method for magnetron sputtering, adopt Cu, In, Ga alloys target, under air pressure 6Pa, Se atmosphere, form p-type Cu (In, Ga) Se2Semiconductor layer.Cu/ (In+Ga): Ga/ (In+Ga) of alloys target changes in gradient.Cu (In, Ga) Se2 semiconductor material thicknesses is 1000nm, and doping content is at 1x1017cm-3, band gap is 1.1eV.
[304] in the p-type semiconductor layer 41 of end battery 4, CdS target is adopted, at air pressure 6Pa, Ar, O2, H2Form n-type semiconductor layer 42, i.e. n-type CdS cushion under atmosphere, cushion thickness 50nm.
[305] in the n-type semiconductor layer 42 of end battery 4, growing tunnel knot 5 by MBE mode, process atmospheric pressures is at 1x10-5pa.Technological temperature is 300 DEG C.First growth n+ type semiconductor layer 51, i.e. n+-CdS, doped chemical is In, and doping content is 4 × 1018cm-3, thickness is 8nm；Then, under In atmosphere, anneal at 10 DEG C.
[306] in n+ type semiconductor layer 51, p+ type semiconductor layer 52 is grown by MBE mode, i.e. p+-CdxZn1-xTe, x=0.6, doped chemical is As, and doping content is 4 × 1019cm-3, thickness is 15nm；Then, under As atmosphere, anneal at 10 DEG C.
[307] on tunnel knot 5, p-type semiconductor layer 61 and the n-type semiconductor layer 62, p-Cd of top battery 6 is grown by MBE modexZn1-xTe, x=0.7, doped chemical As, doping content is 5 × 1017cm-3And n+-CdxZn1-xTe, x=0.7, doped chemical In, doping content is 5 × 1018cm-3.Thickness is 500nm, 300nm respectively
[308] by magnetically controlled sputter method on the battery 6 of top, adopt ZnO and ZnO:Al target, form ZnO and ZnO:Al Window layer 7 under an ar atmosphere.Thickness is 300nm, 500nm respectively.
[309] in Window layer 8, Cu front electrode 8, thickness of electrode 20 μm are formed by method for printing screen, thus preparing CIGS/CdZnTe overlapping thin film solar battery.
Obviously, above-described embodiment is only for clearly demonstrating example, and is not the restriction to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also cannot all of embodiment be given exhaustive.And the apparent change thus extended out or variation are still among protection scope of the present invention.
Claims (13)
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409961A (en) * | 2016-11-23 | 2017-02-15 | 常熟理工学院 | N-Si/CdSSe laminated solar cell and preparation method thereof |
| CN110112248A (en) * | 2019-05-13 | 2019-08-09 | 中国科学院电工研究所 | Four end CIGS/CBTS binode stacked solar cell, cascade solar cells and preparation method thereof |
| CN112349801A (en) * | 2020-10-16 | 2021-02-09 | 泰州隆基乐叶光伏科技有限公司 | Intermediate series layer of laminated battery, production method and laminated battery |
| CN113875025A (en) * | 2019-03-29 | 2021-12-31 | 新加坡国立大学 | Solar cell and method for manufacturing solar cell |
| CN115084302A (en) * | 2021-03-16 | 2022-09-20 | 北京理工大学 | Photoelectric device based on photoelectric recovery effect enhancement, preparation method and application |
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| CN113875025A (en) * | 2019-03-29 | 2021-12-31 | 新加坡国立大学 | Solar cell and method for manufacturing solar cell |
| CN110112248A (en) * | 2019-05-13 | 2019-08-09 | 中国科学院电工研究所 | Four end CIGS/CBTS binode stacked solar cell, cascade solar cells and preparation method thereof |
| CN112349801A (en) * | 2020-10-16 | 2021-02-09 | 泰州隆基乐叶光伏科技有限公司 | Intermediate series layer of laminated battery, production method and laminated battery |
| CN112349801B (en) * | 2020-10-16 | 2023-12-01 | 泰州隆基乐叶光伏科技有限公司 | Intermediate series layer of laminated battery, production method thereof and laminated battery |
| CN115084302A (en) * | 2021-03-16 | 2022-09-20 | 北京理工大学 | Photoelectric device based on photoelectric recovery effect enhancement, preparation method and application |
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