CN105717754A - Developing apparatus and method for reducing water stain defects by using same - Google Patents
Developing apparatus and method for reducing water stain defects by using same Download PDFInfo
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- CN105717754A CN105717754A CN201610212877.6A CN201610212877A CN105717754A CN 105717754 A CN105717754 A CN 105717754A CN 201610212877 A CN201610212877 A CN 201610212877A CN 105717754 A CN105717754 A CN 105717754A
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- wafer
- gas nozzle
- treatment
- developing unit
- water stain
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 230000007547 defect Effects 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims description 83
- 230000007246 mechanism Effects 0.000 claims abstract description 5
- 238000004528 spin coating Methods 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 80
- 230000008569 process Effects 0.000 claims description 66
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 238000007664 blowing Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000001914 calming effect Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 abstract 1
- 239000007921 spray Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 238000000671 immersion lithography Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000008346 aqueous phase Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 238000012800 visualization Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses a developing apparatus. The developing apparatus is provided with a spin-coating mechanism; the developing apparatus further comprises a wafer bearing platform, a first gas nozzle and a second gas nozzle, wherein the wafer bearing platform rotates through a rotary shaft and is used for bearing a to-be-processed wafer; the first gas nozzle and the second gas nozzle are both connected with external clean gas pressurized pipelines respectively, and are positioned on the upper and lower sides of the to-be-processed wafer on the wafer bearing platform respectively; and the pressurized gas between the first gas nozzle and the second gas nozzle sprays to the edge of the to-be-processed wafer. The developing apparatus provided by the invention is further provided with the wafer bearing platform rotating through the rotary shaft, and the first gas nozzle and the second gas nozzle arranged on the upper and lower sides of the to-be-processed wafer on the wafer bearing platform, so that the developing apparatus is simple in structure, and convenient to use; under the rotating centrifugal force, water stains are sprayed by clean gas, so separation and evaporation of the residual water stains are accelerated, defects of the water stains are reduced, and product yield is improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of developing unit and the method using this developing unit to reduce water stain defect.
Background technology
For existing immersion lithography process with filtered air, due in exposure process, aqueous phase between wafer and lens is as the movement of wafer and movement for wafer, and water self is also flowed by water system effect, and therefore the water of relative motion will inevitably remain crystal column surface after exposure.But, these water stain defects just influence whether the development effect of figure when follow-up development step, the defect of poor visualization occur, and eventually affect the yield of product.
After the lasting improvement of person skilled, although water obtains in the residual of crystal column surface and is greatly lowered, most of region of wafer solves water stain defect problem, but the marginal portion at wafer, especially proximate within the scope of edge 10mm, due to reasons such as photoresist flatness, edge remove photoresist, after the exposure within the scope of this, water stain defect probability is still too high.
Seek a kind of simple in construction, easy to use, and can effectively reduce the developing unit because water stain defect causes product yield to decline and method has become one of those skilled in the art's technical problem urgently to be resolved hurrily.
Therefore for prior art Problems existing, this case designer, by being engaged in the industry experience for many years, actively studies improvement, then there are a kind of developing unit of the present invention and the method using this developing unit to reduce water stain defect.
Summary of the invention
The present invention be directed in prior art, traditional immersion lithography process with filtered air, owing in exposure process, photoresist flatness, edge such as remove photoresist at the reason, it is easy to cause the water stain defect in marginal portion of wafer, cause that under product yield, degradation problem provides a kind of developing unit.
Second purpose of the present invention is in prior art, traditional immersion lithography process with filtered air, owing in exposure process, photoresist flatness, edge such as remove photoresist at the reason, easily cause the water stain defect in marginal portion of wafer, cause that under product yield, degradation problem provides a kind of method using this developing unit to reduce water stain defect.
For realizing the purpose of the present invention, the present invention provides a kind of developing unit, described kind of developing unit, has spin coating mechanism, and farther includes: wafer carrying platform, and described wafer carrying platform is rotated by rotating shaft, and treats the wafer of PROCESS FOR TREATMENT for carrying；First gas nozzle and the second gas nozzle, described first gas nozzle and described second gas nozzle all have pressure pipe road to be connected with extraneous clean gas, and be separately positioned on the upper and lower both sides of the wafer treating PROCESS FOR TREATMENT being positioned on wafer carrying platform, and the body of calming the anger that has of described first gas nozzle and described second gas nozzle is jetted towards the edge of the described wafer treating PROCESS FOR TREATMENT.
Alternatively, treat described in that the wafer of PROCESS FOR TREATMENT is arranged on described wafer carrying platform by the mode that vac sorb is fixing.
Alternatively, the described rounded setting of wafer carrying platform, and the diameter of described wafer carrying platform is less than the 1/2 of the described diameter wafer treating PROCESS FOR TREATMENT.
Alternatively, described first gas nozzle and described second gas nozzle are configured according to the water stain residual quantity of the wafer treating PROCESS FOR TREATMENT relative to described wafer carrying platform height, winding-up angle, blowing gas flow.
For realizing second purpose of the present invention, the present invention provides a kind of method using described developing unit to reduce water logging defect, and described developing unit reduces the method for water logging defect, including:
Perform step S1: treat that the wafer of PROCESS FOR TREATMENT completes the rotary coating of photoresist and insolated layer materials in described developing unit；
Perform step S2: have in the wafer entrance immersed photoetching machine treating PROCESS FOR TREATMENT described in photoresist and insolated layer materials and complete exposure；
Perform step S3: the wafer return treating PROCESS FOR TREATMENT completing exposure technology is arranged on the wafer carrying platform of described developing unit, and removes residual water stain under the winding-up of described first gas nozzle and described second gas nozzle；
Perform step S4: remove the water stain wafer treating PROCESS FOR TREATMENT of residual and complete to bakee, develop in described developing unit, and terminate photolithography process.
Alternatively, the compression air that blowing gas is nitrogen or dried and clean of described first gas nozzle and described second gas nozzle.
Alternatively, treat described in described first gas nozzle distance that the vertical dimension of wafer upper surface of PROCESS FOR TREATMENT is more than 10mm, treats described in described second gas nozzle distance that the vertical dimension of wafer lower surface of PROCESS FOR TREATMENT is more than 10mm.
Alternatively, the floor projection distance of described first gas nozzle and the described crystal round fringes treating PROCESS FOR TREATMENT is more than 20mm, and the floor projection distance of described second gas nozzle and the described crystal round fringes treating PROCESS FOR TREATMENT is more than 20mm.
In sum, developing unit of the present invention is by arranging the wafer carrying platform rotated by rotating shaft further, and the upper and lower both sides of the wafer treating PROCESS FOR TREATMENT on described wafer carrying platform arrange the first gas nozzle and the second gas nozzle, be not only simple in structure, easy to use, and while rotary centrifugal force effect, can be jetted by clean gas, accelerate to remain water stain disengaging and evaporation, reduce water stain defect, improve product yield.
Accompanying drawing explanation
Fig. 1 show developing device structure schematic diagram of the present invention；
The working state schematic representation of developing unit of the present invention shown in Fig. 2；
Fig. 3 show the top view of the wafer carrying platform of developing unit of the present invention；
Fig. 4 show the flow chart of the method using the described developing unit water stain defect of reduction.
Detailed description of the invention
By describing the technology contents of the invention, structural feature in detail, being reached purpose and effect, below in conjunction with embodiment and coordinate accompanying drawing to be described in detail.
For existing immersion lithography process with filtered air, due in exposure process, aqueous phase between wafer and lens is as the movement of wafer and movement for wafer, and water self is also flowed by water system effect, and therefore the water of relative motion will inevitably remain crystal column surface after exposure.But, these water stain defects just influence whether the development effect of figure when follow-up development step, the defect of poor visualization occur, and eventually affect the yield of product.
After the lasting improvement of person skilled, although water obtains in the residual of crystal column surface and is greatly lowered, most of region of wafer solves water stain defect problem, but the marginal portion at wafer, especially proximate within the scope of edge 10mm, due to reasons such as photoresist flatness, edge remove photoresist, after the exposure within the scope of this, water stain defect probability is still too high.
Referring to Fig. 1, Fig. 2, Fig. 1 show developing device structure schematic diagram of the present invention.The working state schematic representation of developing unit of the present invention shown in Fig. 2.Described developing unit 1, has spin coating mechanism (not shown), and farther includes: wafer carrying platform 11, and described wafer carrying platform 11 is rotated by rotating shaft 12, and treats the wafer 10 of PROCESS FOR TREATMENT for carrying；First gas nozzle 13 and the second gas nozzle 14, described first gas nozzle 13 and described second gas nozzle 14 all have pressure pipe road (not shown) to be connected with extraneous clean gas, and be separately positioned on the upper and lower both sides of wafer 10 treating PROCESS FOR TREATMENT being positioned on described wafer carrying platform 11, and the body of calming the anger that has of described first gas nozzle 13 and described second gas nozzle 14 is jetted towards edge 101 place of the described wafer 10 treating PROCESS FOR TREATMENT.
In order to disclose the technical scheme of the present invention more intuitively, highlight the beneficial effect of the present invention, be example in conjunction with detailed description of the invention, the structure of developing unit of the present invention is illustrated with the operation principle of the method using described developing unit to reduce water stain defect.In a specific embodiment, the planform of each functional part of described developing unit, size, position are arranged, and blowing gas flow etc. is only and enumerates, and is not construed as the restriction to technical solution of the present invention.
Referring to Fig. 3, and Fig. 1, Fig. 2 are consulted in combination, Fig. 3 show the top view of the wafer carrying platform of developing unit of the present invention.Described developing unit 1, has spin coating mechanism (not shown), and farther includes: wafer carrying platform 11, and described wafer carrying platform 11 is rotated by rotating shaft 12, and treats the wafer 10 of PROCESS FOR TREATMENT for carrying；First gas nozzle 13 and the second gas nozzle 14, described first gas nozzle 13 and described second gas nozzle 14 all have pressure pipe road (not shown) to be connected with extraneous clean gas, and be separately positioned on the upper and lower both sides of wafer 10 treating PROCESS FOR TREATMENT being positioned on described wafer carrying platform 11, and the body of calming the anger that has of described first gas nozzle 13 and described second gas nozzle 14 is jetted towards edge 101 place of the described wafer 10 treating PROCESS FOR TREATMENT.
Specifically, treat described in that the wafer 10 of PROCESS FOR TREATMENT is arranged on described wafer carrying platform 11 by the mode that vac sorb is fixing.The described rounded setting of wafer carrying platform 11.Meanwhile, the water stain residual winding-up for the ease of described wafer 10 edge 101 place treating PROCESS FOR TREATMENT is removed, it is preferable that the diameter of described wafer carrying platform 11 is less than the 1/2 of described wafer 10 diameter treating PROCESS FOR TREATMENT.On the other hand, as those skilled in the art, it is understood that ground, in order to treat that the water stain residual at wafer 10 edge 101 place of PROCESS FOR TREATMENT, described first gas nozzle 13 and described second gas nozzle 14 can be configured according to the water stain residual quantity of the described wafer 10 treating PROCESS FOR TREATMENT relative to described wafer carrying platform 11 height, winding-up angle, blowing gas flow described in effectively removing.
Refer to Fig. 4, and combine the flow chart consulting the method that Fig. 1～Fig. 3, Fig. 4 show the use described developing unit water stain defect of reduction.Described developing unit reduces the method for water stain defect, including:
Perform step S1: treat that the wafer 10 of PROCESS FOR TREATMENT completes the rotary coating of photoresist and insolated layer materials in described developing unit 1；
Perform step S2: have treat described in photoresist and isolated material the wafer 10 of PROCESS FOR TREATMENT enter immersed photoetching machine completes exposure；
Perform step S3: the wafer 10 the treating PROCESS FOR TREATMENT return completing exposure technology is arranged on the wafer carrying platform 11 of described developing unit 1, and removes residual water stain under the winding-up of described first gas nozzle 13 and described second gas nozzle 14；
Perform step S4: remove the water stain wafer 10 treating PROCESS FOR TREATMENT of residual and complete to bakee, develop in described developing unit 1, and terminate photolithography process.
In order to avoid described first gas nozzle 13 and described second gas nozzle 14 in winding-up to introduce the compression air that blowing gas is nitrogen or dried and clean of new contaminating impurity, described first gas nozzle 13 and described second gas nozzle 14 time described in removing until the water stain residual at wafer 10 edge 101 place of PROCESS FOR TREATMENT.
Can be configured according to the water stain residual quantity of the wafer 10 treating PROCESS FOR TREATMENT relative to described wafer carrying platform 11 height, winding-up angle, blowing gas flow as specifically embodiment, described first gas nozzle 13 and described second gas nozzle 14.Enumerate without limitation, described first gas nozzle 13 apart from the vertical dimension of described wafer 10 upper surface treating PROCESS FOR TREATMENT more than 10mm, described second gas nozzle 14 apart from the vertical dimension of described wafer 10 lower surface treating PROCESS FOR TREATMENT more than 10mm.The floor projection distance at described first gas nozzle 13 and described wafer 10 edge 101 treating PROCESS FOR TREATMENT is more than 20mm, and the floor projection distance at described second gas nozzle 14 and described wafer 10 edge 101 treating PROCESS FOR TREATMENT is more than 20mm.
It is apparent that the wafer 10 treating PROCESS FOR TREATMENT completing exposure technology returns and is arranged on the wafer carrying platform 11 of described developing unit 1, and under the winding-up of described first gas nozzle 13 and described second gas nozzle 14, remove residual water stain.Namely, the wafer 10 treating PROCESS FOR TREATMENT completing exposure technology is arranged on described wafer carrying platform 11 by the mode that vac sorb is fixing, and rotated by described rotating shaft 12, water stain the throwing away to the outside at edge 101 under the influence of centrifugal force of the described wafer 10 edge 101 place residual treating PROCESS FOR TREATMENT, the body of calming the anger that has of described first gas nozzle 13 and described second gas nozzle 14 is jetted towards edge 101 place of the described wafer 10 treating PROCESS FOR TREATMENT simultaneously, further speed up the water stain disengaging of residual and evaporation, reduce water stain defect.
In sum, developing unit of the present invention is by arranging the wafer carrying platform rotated by rotating shaft further, and the upper and lower both sides of the wafer treating PROCESS FOR TREATMENT on described wafer carrying platform arrange the first gas nozzle and the second gas nozzle, be not only simple in structure, easy to use, and while rotary centrifugal force effect, can be jetted by clean gas, accelerate to remain water stain disengaging and evaporation, reduce water stain defect, improve product yield.
Those skilled in the art are all it will be appreciated that without departing from the spirit or scope of the present invention, it is possible to the present invention is carried out various modifications and variations.Thus, if any amendment or modification fall in the protection domain of appended claims and equivalent, it is believed that the present invention contains these amendment and modification.
Claims (8)
1. a developing unit, has spin coating mechanism, it is characterised in that described developing unit, farther includes:
Wafer carrying platform, described wafer carrying platform is rotated by rotating shaft, and treats the wafer of PROCESS FOR TREATMENT for carrying；
First gas nozzle and the second gas nozzle, described first gas nozzle and described second gas nozzle all have pressure pipe road to be connected with extraneous clean gas, and be separately positioned on the upper and lower both sides of the wafer treating PROCESS FOR TREATMENT being positioned on wafer carrying platform, and the body of calming the anger that has of described first gas nozzle and described second gas nozzle is jetted towards the edge of the described wafer treating PROCESS FOR TREATMENT.
2. developing unit as claimed in claim 1, it is characterised in that described in treat that the mode that the wafer of PROCESS FOR TREATMENT is fixed by vac sorb is arranged on described wafer carrying platform.
3. developing unit as claimed in claim 1, it is characterised in that the described rounded setting of wafer carrying platform, and the diameter of described wafer carrying platform is less than the 1/2 of the described diameter wafer treating PROCESS FOR TREATMENT.
4. developing unit as claimed in claim 1, it is characterized in that, described first gas nozzle and described second gas nozzle are configured according to the water stain residual quantity of the wafer treating PROCESS FOR TREATMENT relative to described wafer carrying platform height, winding-up angle, blowing gas flow.
5. one kind uses the method that developing unit as claimed in claim 1 reduces water stain defect, it is characterised in that use the method that described developing unit reduces water stain defect, including:
Perform step S1: treat that the wafer of PROCESS FOR TREATMENT completes the rotary coating of photoresist and insolated layer materials in described developing unit；
Perform step S2: have in the wafer entrance immersed photoetching machine treating PROCESS FOR TREATMENT described in photoresist and insolated layer materials and complete exposure；
Perform step S3: the wafer return treating PROCESS FOR TREATMENT completing exposure technology is arranged on the wafer carrying platform of described developing unit, and removes residual water stain under the winding-up of described first gas nozzle and described second gas nozzle；
Perform step S4: remove the water stain wafer treating PROCESS FOR TREATMENT of residual and complete to bakee, develop in described developing unit, and terminate photolithography process.
6. use the method that this developing unit reduces water stain defect as claimed in claim 5, it is characterised in that the compression air that blowing gas is nitrogen or dried and clean of described first gas nozzle and described second gas nozzle.
7. use the method that this developing unit reduces water stain defect as claimed in claim 5, it is characterized in that, treat described in described first gas nozzle distance that the vertical dimension of wafer upper surface of PROCESS FOR TREATMENT is more than 10mm, treats described in described second gas nozzle distance that the vertical dimension of wafer lower surface of PROCESS FOR TREATMENT is more than 10mm.
8. use the method that this developing unit reduces water stain defect as claimed in claim 6, it is characterized in that, the floor projection distance of described first gas nozzle and the described crystal round fringes treating PROCESS FOR TREATMENT is more than 20mm, and the floor projection distance of described second gas nozzle and the described crystal round fringes treating PROCESS FOR TREATMENT is more than 20mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610212877.6A CN105717754A (en) | 2016-04-07 | 2016-04-07 | Developing apparatus and method for reducing water stain defects by using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610212877.6A CN105717754A (en) | 2016-04-07 | 2016-04-07 | Developing apparatus and method for reducing water stain defects by using same |
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| Publication Number | Publication Date |
|---|---|
| CN105717754A true CN105717754A (en) | 2016-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610212877.6A Pending CN105717754A (en) | 2016-04-07 | 2016-04-07 | Developing apparatus and method for reducing water stain defects by using same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110648945A (en) * | 2019-08-16 | 2020-01-03 | 中国电子科技集团公司第十一研究所 | Device and method for drying substrate |
| CN112859548A (en) * | 2019-11-27 | 2021-05-28 | 长鑫存储技术有限公司 | Developing device and developing method thereof |
| CN112965347A (en) * | 2020-11-12 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Wafer developing device and method and wafer |
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| TWI230974B (en) * | 2003-09-23 | 2005-04-11 | Mosel Vitelic Inc | Method for developing |
| CN1892433A (en) * | 2005-06-30 | 2007-01-10 | 台湾积体电路制造股份有限公司 | Method for performing wet immersion lithography, wet immersion lithography system, and device |
| CN101651085A (en) * | 2008-08-14 | 2010-02-17 | 中芯国际集成电路制造(北京)有限公司 | Device and method for cleaning chip |
| WO2015193036A1 (en) * | 2014-06-16 | 2015-12-23 | Asml Netherlands B.V. | Lithographic apparatus, method of transferring a substrate and device manufacturing method |
| CN105336565A (en) * | 2014-06-12 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Immersed type method for cleaning watermark after explosion |
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2016
- 2016-04-07 CN CN201610212877.6A patent/CN105717754A/en active Pending
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| TWI230974B (en) * | 2003-09-23 | 2005-04-11 | Mosel Vitelic Inc | Method for developing |
| CN1892433A (en) * | 2005-06-30 | 2007-01-10 | 台湾积体电路制造股份有限公司 | Method for performing wet immersion lithography, wet immersion lithography system, and device |
| CN101651085A (en) * | 2008-08-14 | 2010-02-17 | 中芯国际集成电路制造(北京)有限公司 | Device and method for cleaning chip |
| CN105336565A (en) * | 2014-06-12 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Immersed type method for cleaning watermark after explosion |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110648945A (en) * | 2019-08-16 | 2020-01-03 | 中国电子科技集团公司第十一研究所 | Device and method for drying substrate |
| CN112859548A (en) * | 2019-11-27 | 2021-05-28 | 长鑫存储技术有限公司 | Developing device and developing method thereof |
| CN112859548B (en) * | 2019-11-27 | 2024-03-26 | 长鑫存储技术有限公司 | Developing device and developing method thereof |
| CN112965347A (en) * | 2020-11-12 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Wafer developing device and method and wafer |
| CN112965347B (en) * | 2020-11-12 | 2023-11-03 | 重庆康佳光电科技有限公司 | Wafer developing device, method and wafer |
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Application publication date: 20160629 |