CN105717337B - Dc bias measuring system and method adjust system and method with sorptive force - Google Patents
Dc bias measuring system and method adjust system and method with sorptive force Download PDFInfo
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- CN105717337B CN105717337B CN201410726706.6A CN201410726706A CN105717337B CN 105717337 B CN105717337 B CN 105717337B CN 201410726706 A CN201410726706 A CN 201410726706A CN 105717337 B CN105717337 B CN 105717337B
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Abstract
A kind of Dc bias measuring system of present invention offer and method adjust system and method with sorptive force, first obtain the voltage of the radio-frequency power supply of electrostatic chuck, and rule of thumb formula seeks the first DC bias value present on wafer；DC power supply is fed back according to the first DC bias value, when generating the DC voltage of smooth sorption wafer, the leakage current of the DC power supply under stable state is measured, and obtains the DC voltage and system resistance value, accurate second DC bias value on wafer is sought based on Ohm's law.Second DC bias value is fed back into DC power supply, can further adjust the numerical value of DC voltage, realizes the adjustment to the sorptive force of wafer.The present invention can obtain real-time Dc bias based on the leakage current of DC power supply, realize accurately controlling to the sorptive force of wafer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to the Dc bias measuring system in a kind of electrostatic chuck and side
Method adjusts system and method with sorptive force.
Background technology
Electrostatic chuck（Electrostatic chuck, abbreviation ESC）By provide one with the DC voltage difference of wafer come
Sorption wafer, and good heat is provided and is transmitted.
By taking plasma processing apparatus shown in FIG. 1 as an example, electrostatic chuck 10 is generally arranged in the reaction chamber 40 of device
Bottom；The top of reaction chamber 40 is provided with spray head 30（Shower Head）Or similar device imports process gas
In reaction chamber 40；One set by the top of a lower electrode 11 for connecting radio-frequency power supply RF, with reaction chamber 40 set by electrostatic chuck 10
Between the top electrode of a ground connection, rf electric field is formed to inspire the plasma corresponding to process gas, is opposite to electrostatic chuck
Wafer 20 on disk 10 is etched or other processing.
In processing procedure, electrostatic chuck 10 is connected to direct current by the DC electrode 12 being arranged in its top dielectric
Power supply, to generate the DC voltage V of sorption waferHV,The DC voltage is higher, and typically larger than 700V even can reach 2000V-
3000V.In setting DC voltage VHVNumerical value when, need to consider requirement below：If DC voltage is too small, will cause to inhale
Put forth effort deficiency, the helium that wafer 20 may can be cooled in technical process（He）Back pressure is blown away.If DC voltage is excessive,
It will be in wafer 20（Especially there are the wafer of insulating layer, silicon oxide layer or the wafer for being coated with photoresist）On leave it is excessive residual
Remaining charge leads to that after technique release cannot be desorbed in time（de-chuck）Wafer 20 causes it to be ruptured when being crawled, very
To so that there is potential plasma damage in the semiconductor devices for processing formation on wafer 20（PID）Phenomenon.
On the other hand, due to existing plasma in reaction chamber 40, Dc bias Vdc can be generated on wafer 20（Or
Claim automatic bias）.And in order to ensure the stabilization of sorptive force, generally require to the Dc bias Vdc on wafer 20 carry out estimation or
It after measurement, feeds back in the DC power supply of electrostatic chuck 10, to adjust DC voltage VHVOutput.
Traditional Dc bias Vdc measurement methods are：The voltage Vpp for measuring radio-frequency power supply RF, it is public by certain experience
Dc bias Vdc is calculated in Formula V dc=F (Vpp).However, this traditional measurement method based on empirical equation obtain be
A kind of approximation, when radio-frequency power span is very big（100W-10000W ranges）, it is difficult often accurate measure.So existing
Vdc measurement methods cannot achieve the specific process technology for needing to accurately control Vdc.
Invention content
The purpose of the present invention is to provide the Dc bias measuring systems and method and sorptive force tune in a kind of electrostatic chuck
Whole system and method obtains real-time Dc bias based on the leakage current of DC power supply, to realize the sorptive force to wafer
Accurately control.
In order to achieve the above object, first technical solution of the invention is to provide a kind of Dc bias measurement method,
In include following procedure：
Electrode power supply of the DC power supply into electrostatic chuck is controlled, is provided the straight of the smooth sorption of wafer on electrostatic chuck
Galvanic electricity presses VHV, detect the leakage current I numerical value of the DC power supply under stable state；
According to the leakage current I, and obtain the DC voltage V of the DC power supplyHVNumerical value and electrostatic chuck where etc.
The system resistance value R of gas ions processing unit, based on Ohm's law I=（VHV-Vdc-2）It is straight to seek present on wafer second by/R
Flow bias value Vdc-2。
Preferably, also include following procedure in the Dc bias measurement method：
Obtain the voltage Vpp of the radio-frequency power supply RF of electrostatic chuck；
According to the empirical equation V between wafer Dc bias and the voltage Vpp of the radio-frequency power supply RFdc-1=F (Vpp) comes
Seek the first DC bias value V present on waferdc-1；
Again by the first DC bias value Vdc-1DC power supply is fed back to, to control the initial DC electricity of DC power supply output
Press VHV。
Preferably, by DC power supply according to the first DC bias value Vdc-1DC voltage V caused by feedbackHV,
Its practical sorptive force provided to wafer is more than the necessary sorptive force needed for sorption wafer, to ensure wafer by smooth sorption.
Preferably, the system resistance value R is the equiva lent impedance of the equivalent internal resistance and electrostatic chuck and wafer of DC power supply
Resistance value after series connection；Alternatively, the system resistance value R is by the equivalent of the equivalent internal resistance of DC power supply, electrostatic chuck and wafer
Resistance value after impedance, the equiva lent impedance series connection of plasma in plasma processing apparatus reaction chamber.
Preferably, by the second DC bias value Vdc-2DC power supply is fed back to, to adjust DC power supply offer
DC voltage VHVNumerical value, complete to realize the sorptive force to wafer when detecting that leakage current I numerical value is given current value I '
Adjustment.
Second technical solution of the present invention is to provide a kind of Dc bias measuring system, wherein including：
Radio-frequency voltage reading unit obtains the electricity of radio-frequency power supply RF outputs from the radio-frequency power supply RF of electrostatic chuck
Press Vpp；
First arithmetic device receives the voltage Vpp that the radio-frequency voltage reading unit obtains, and is based on empirical equation Vdc-1=F
(Vpp), the first DC bias value V present on the wafer in electrostatic chuck sorption is calculateddc-1And feed back to DC power supply；
DC voltage reading unit obtains the DC voltage V to sorption wafer from DC power supplyHV；
Leakage current test unit is connected to the DC power supply and is detected to obtain leakage current I；
Second arithmetic device receives the DC voltage V that the DC voltage reading unit obtains respectivelyHV, and the electric leakage
The leakage current I that stream detection unit measures, and according to the system resistance value R of plasma processing apparatus where electrostatic chuck, be based on
Ohm's law I=（VHV-Vdc-2）The second DC bias value V present on current wafer is calculated in/Rdc-2。
The third technical solution of the present invention is to provide a kind of sorptive force method of adjustment, including following procedure：
The electrode power supply of step 1, control DC power supply into electrostatic chuck, provides and smoothly inhales the wafer on electrostatic chuck
The DC voltage VHVWhen, detect the leakage current I of the DC power supply under stable state；
Step 2 carries out the given current value I ' of plasma processing apparatus where the numerical value of leakage current I and electrostatic chuck
Compare, if leakage current I and given current value I ' is unanimously, carries out step 5；If leakage current I and given current value I ' are inconsistent, carry out
Step 3；
The DC voltage V that step 3, DC power supply provide itHVNumerical value be adjusted, and then make the DC power supply
Leakage current I is adjusted therewith；
The numerical value of adjustment back leak electric current I under step 4, detection stable state, by the numerical value of leakage current I after adjustment and given electricity
Flow valuve I ' is compared, if the numerical value of leakage current I and given current value I ' are unanimously after adjustment, carries out step 5；If leaking electricity after adjustment
Numerical value and the given current value I ' for flowing I are inconsistent, execute step 3 again；
Step 5, the basis leakage current I consistent with given current value I ' numerical value, and obtain the direct current of the DC power supply
Press VHVAnd the system resistance value R of plasma processing apparatus, based on Ohm's law I=（VHV-Vdc-2’）/ R seeks depositing on wafer
The second DC bias value given value Vdc-2’。
Preferably, also include following procedure in the sorptive force method of adjustment：
Obtain the voltage Vpp of the radio-frequency power supply RF of electrostatic chuck；
According to the empirical equation V between wafer Dc bias and the voltage Vpp of the radio-frequency power supply RFdc-1=F (Vpp) comes
Seek the first DC bias value V present on waferdc-1；
Again by the first DC bias value Vdc-1DC power supply is fed back to, ensures wafer by the direct current of smooth sorption to generate
Voltage VHV。
Preferably, according to leakage current I and DC voltage VHVNumerical value in electrifying DC power supply or after each adjustment, and
System resistance value R, based on Ohm's law I=（VHV-Vdc-2）/ R seeks real-time existing second DC bias value V on waferdc-2。
Preferably, in step 3, if leakage current I is less than given current value, DC power supply is by increasing DC voltage VHVNumber
Value, to increase leakage current I；
If leakage current I is more than given current value, DC power supply is by reducing DC voltage VHVNumerical value, come reduce electric leakage
Flow I.
The 4th technical solution of the present invention is to provide a kind of sorptive force adjustment system, wherein including：
Radio-frequency voltage reading unit obtains the electricity of radio-frequency power supply RF outputs from the radio-frequency power supply RF of electrostatic chuck
Press Vpp；
First arithmetic device receives the voltage Vpp that the radio-frequency voltage reading unit obtains, and is based on empirical equation Vdc-1=F
(Vpp), the first DC bias value V present on the wafer in electrostatic chuck sorption is calculateddc-1And feed back to DC power supply；
DC voltage reading unit obtains the DC voltage V to sorption wafer from DC power supplyHV；
Leakage current test unit is connected to the DC power supply and is detected to obtain leakage current I；
Constant current reading unit is given, to obtain the given current value of electrostatic chuck place plasma processing apparatus
I’；
Leakage current comparing unit, from leakage current test unit and give constant current reading unit, respectively receive leakage current I and
Given current value I ' carries out numeric ratio pair；
Second arithmetic device, when the electric current comparison result of leakage current comparing unit is inconsistent, the second arithmetic device receives
The leakage current I that the leakage current test unit measures also receives the DC voltage V that the DC voltage reading unit obtainsHV, and
According to the system resistance value R of plasma processing apparatus, based on Ohm's law I=（VHV-Vdc-2）/ R is calculated on wafer currently
The second DC bias value Vdc-2, and by the second DC bias value Vdc-2DC power supply is fed back to, to adjust DC power supply
The DC voltage V of offerHVNumerical value, realize the adjustment to the sorptive force of wafer；
When the electric current comparison result of leakage current comparing unit is consistent, the second arithmetic device is according to current DC voltage
VHV, system resistance value R, the leakage current test unit leakage current I consistent with given current value I ' numerical value that measures, it is fixed based on ohm
Rule I=（VHV-Vdc-2’）The given value V of the second DC bias value is calculated in/Rdc-2’；DC power supply can be according to described second
The given value V of DC bias valuedc-2', the DC voltage of appropriate value is exported, the necessary sorptive force to wafer is provided.
Compared with prior art, system and method provided by the invention, the advantage is that：The present invention is obtained using the prior art
To Dc bias feed back to DC power supply and ensure wafer sorption, examined after waiting for the leakage current of DC power supply to stablize
It surveys, can more directly calculate real-time Dc bias on wafer.DC voltage is controlled using leakage current feedback in the present invention,
The Dc bias of approaching to reality gradually, to realize accurate sorptive force control；The leakage current of feedback is one and constant gives
When constant current value, obtained DC voltage has suitable numerical value, can ensure that wafer sorption and desorption releasing effect are stablized, protect
Demonstrate,prove smaller plasma damage（PID）.
Description of the drawings
Fig. 1 is the system structure diagram using Dc bias measurement method described in the prior art；
Fig. 2 is the system structure diagram using Dc bias measurement method of the present invention；
Fig. 3 is the flow chart of heretofore described Dc bias measurement method；
Fig. 4 is the flow chart of heretofore described sorptive force method of adjustment；
Fig. 5 is the structural schematic diagram of heretofore described Dc bias measuring system；
Fig. 6 is the structural schematic diagram of heretofore described sorptive force adjustment system.
Specific implementation mode
Shown in Fig. 2, Fig. 3, the Dc bias measurement method in electrostatic chuck of the present invention, including following procedure：
A1, using the measurement method of existing Dc bias, measure the first DC bias value；
In the measurement method of existing Dc bias, the voltage Vpp of radio-frequency power supply RF is obtained first；Radio-frequency power supply RF with it is anti-
A lower electrode 11 connection set by bottom electrostatic chuck 10 in chamber 40 is answered, for being powered on one set by 40 top of reaction chamber
Pole coordinates, and rf electric field is formed in reaction chamber 40 to inspire the plasma of process gas.Voltage Vpp can pass through
Directly read the voltage output value shown on radio-frequency voltage RF, or by radio-frequency power supply RF connecting detection device etc. it is various
Mode obtains.
Later, according to the Dc bias for being existed by plasma and being generated on wafer 20, with the radio-frequency power supply RF's
Empirical equation between voltage Vpp obtains the first DC bias value Vdc-1=F(Vpp)。
B1, by the first DC bias value Vdc-1DC power supply is fed back to, it is straight by being connected in electrostatic chuck 10 set one
The DC power supply on galvanic electricity pole 12 provides a DC voltage VHV.And by the first DC bias value V of feedbackdc-1,
It calculates and obtains the DC voltage V that the DC power supply providesHVInitial value, which should be guaranteed that the crystalline substance on electrostatic chuck 10
Circle 20 is by smooth sorption.Due to the first DC bias value Vdc-1Measurement it is inaccurate when radio-frequency power span is very big, then for
Ensure that there is enough sorptive forces, at this time may show as practical sorptive force more than the necessary sorptive force needed for sorption wafer 20
The case where, that is, there is a kind of phenomenon that leakage current is excessive（over-chuck）.Due to the DC electrode 12 of electrostatic chuck and top
Wafer 20 and lower section lower electrode 11 between all across insulation material layer, to ensure electrostatic induction generates on wafer charge
It will not be neutralized.Although this upper layer and lower layer insulation material layer impedance is very big, due to DC electrode 12 and the crystalline substance of electrostatic chuck
Round distance is close, and insulation material layer is very thin, so remaining able to detect direct current of a small amount of leakage current from electrostatic chuck
Electrode 12 flows out and flows to wafer 20.The insulation performance of insulation material layer is basicly stable, so flowing to wafer from DC electrode 12
The resistance R that centre is passed through is fixed, and the size of electric current is only by both end voltage VHVWith the influence of practical Vdc differences.Fixed resistance R
Test can be passed through in the lab to obtain and store in the controller as preset parameter.Electrostatic chuck is after long-time service
Micro variation may occur for resistance value, can obtain the resistance value by testing and calculating again.
C1, work as electrifying DC power supply, when wafer 20 is by smooth sorption, after waiting for leakage current I to stablize, detect the leakage current
The numerical value of I.
Assuming that an equivalent circuit, obeys Ohm's law：I=（VHV-Vdc-2）/R.Wherein, system resistance value R be by etc.
The fixed value that this body structure of gas ions processing unit is determined is codetermined by the equiva lent impedance of each device inside device：
Such as in some embodiments can be that the equivalent internal resistance of DC power supply is connected with the equiva lent impedance of electrostatic chuck 10 and wafer 20
Afterwards as the numerical value of system resistance；In another example be in other embodiments by the numerical value of aforementioned series resistance again with reaction chamber 40
Numerical value, etc. after the equiva lent impedance series connection of interior plasma as system resistance.Therefore, if the numerical value of leakage current I passes through
Detection is it was determined that voltage difference（VHV-Vdc-2）Numerical value can be calculated and determine by Ohm's law, and then by knowing direct current
The DC voltage V that power supply providesHVNumerical value, it will be able to seek accurate second DC bias value Vdc-2。
Wherein, when the structure determination of a plasma processing apparatus, the system resistance value R can be by the device
User's manual, equipment nameplate etc. directly know corresponding resistance value parameter, or can be had by regulation other parameters
Secondary experiment is limited to measure.The DC voltage VHVCan by directly reading the voltage output value shown on DC power supply, or
Person by DC power supply the various modes such as connecting detection device obtain.The leakage current I can be by DC power supply
（Or at other any elements on equivalent circuit）Connecting detection device obtains.
As shown in figure 5, in Dc bias measuring system in electrostatic chuck 10 provided by the invention, including：
Radio-frequency voltage reading unit 51 obtains the numerical value of voltage Vpp from radio-frequency power supply RF；
First arithmetic device 52 receives the voltage Vpp that the radio-frequency voltage reading unit 52 obtains, public based on above-mentioned experience
The first DC bias value V is calculated in formuladc-1And feed back to DC power supply；
DC voltage reading unit 53 obtains the DC voltage V to sorption wafer from DC power supplyHVNumerical value；
Leakage current test unit 54 is connected to the DC power supply and is detected to obtain leakage current I；
Second arithmetic device 56 receives the DC voltage V that the DC voltage reading unit 53 obtains respectivelyHVAnd it is described
The leakage current I that leakage current test unit 54 measures, and according to the system resistance value R of plasma processing apparatus, it is fixed based on ohm
Current accurate second DC bias value V is calculated in ruledc-2。
It can be further by the second DC bias value Vdc-2DC power supply is fed back to, to adjust the direct current of its offer
Voltage VHV, realize the adjustment to the sorptive force of wafer.Pass through the DC voltage V exported to DC power supplyHVAdjustment can obtain not
Same leakage current value I is represented when leakage current value I reaches best setting value I ' and has also been reached optimum value to the suction of wafer.
Whether electrostatic chuck is suitable numerical value depending on the DC voltage to the suitable sorptive force of wafer；It is different
Example described in suitable numerical value can refer to a suitable numerical point, a suitable numberical range can also be referred to.Properly
The DC voltage of numerical value is capable of providing the necessary sorptive force needed for sorption wafer, and the sorptive force to wafer will not be caused insufficient,
The residual charge on wafer will not be caused excessive.In the plasma processing apparatus of one structure determination, with the appropriate value
The numerical value of leakage current corresponding to DC voltage is a constant given current value.
Shown in Fig. 2, Fig. 4, it is based on above-mentioned principle, the present invention also provides come from by leakage current in a kind of electrostatic chuck
The method of dynamic adjustment sorptive force, can carry out when each manufacturing process starts.
The method includes following procedure：
A2, using the measurement method of existing Dc bias, i.e.,：The voltage Vpp for obtaining radio-frequency power supply RF, according to Dc bias
Empirical equation between the voltage Vpp of the radio-frequency power supply RF, to measure the first DC bias value Vdc-1=F(Vpp)。
B2, by the first DC bias value Vdc-1DC power supply is fed back to, so that it is provided one and ensures that wafer 20 is smoothly inhaled
The DC voltage VHV。
C2, after waiting for the leakage current I on DC power supply to stablize, the numerical value of leakage current I is detected, and judge leakage current I
Numerical value it is whether consistent with given current value I '：
If leakage current I is less than given current value I ', DC power supply is by increasing DC voltage VHVNumerical value, come increase leakage
Electric current I；
If leakage current I is more than given current value I ', DC power supply is by reducing DC voltage VHVNumerical value, come reduce leakage
Electric current I.
D2, etc. it is to be adjusted after leakage current I again stablize when, detect and judge its whether with given current value I ' unanimously,
Repeated if inconsistent voltage shown in step C2 adjustment operation and D2 shown in leakage current test and with given current value ratio
To operation, when leakage current I is consistent with the given numerical value of current value I ', adjustment compare step terminate.
In adjustment DC voltage V each timeHV, and when the leakage current I of detection stable state, it can be fixed according to above-mentioned ohm
The formula of rule, by system resistance value R known to acquisition, current real-time second DC bias value V is calculateddc-2.Its
In, when leakage current I is given current value I ' especially after adjustment, corresponding conversion obtains VHvWith Vdc-2Difference, the difference
It is also related between electrostatic attraction the practical charge accumulated on wafer is reacted, as long as so ensureing that leakage current is finally adjusted so as to
The stabilization of electrostatic attraction is also ensured that I ', as long as the selection of the I ' values of optimization, can optimize the size of final electrostatic attraction.
Due to VHvIt is accurately known numerical value, so the V that conversion obtainsdc-2It is also accurate.
As shown in fig. 6, the sorptive force in electrostatic chuck provided by the invention adjusts system, including：
Radio-frequency voltage reading unit 51 obtains the numerical value of voltage Vpp from radio-frequency power supply RF；
First arithmetic device 52 receives the voltage Vpp that the radio-frequency voltage reading unit 51 obtains, public based on above-mentioned experience
The first DC bias value V is calculated in formuladc-1And feed back to DC power supply；
DC voltage reading unit 53 obtains the DC voltage V to sorption wafer from DC power supplyHVNumerical value；
Leakage current test unit 54 is connected to the DC power supply and is detected to obtain leakage current I；
To constant current reading unit 57, the given current value I ' in plasma processing apparatus can be obtained；
Leakage current comparing unit 58 from leakage current test unit 54 and gives constant current reading unit 57, receives leakage current I
Numeric ratio pair is carried out with given current value I '；
Second arithmetic device 56 receives the DC voltage V that the DC voltage reading unit 53 obtainsHV, and plasma
The system resistance value R of processing unit, and when the electric current comparison result of leakage current comparing unit 58 is inconsistent, receive the electric leakage
The leakage current I that stream detection unit 54 currently measures, the second DC bias value V is calculated based on Ohm's lawdc-2, and will be described
Second DC bias value Vdc-2DC power supply is fed back to, to adjust the DC voltage V of its offerHV, realize the sorption to wafer
The adjustment of power；
And when the electric current comparison result of leakage current comparing unit 58 is consistent, second arithmetic device 56 is then according to DC voltage
VHV, the leakage current I that currently measures of system resistance value R, leakage current test unit 54（It has the number equal with given current value I '
Value）, the given value V of the second DC bias value is calculated based on Ohm's lawdc-2’.DC power supply can be according to described second
The given value V of DC bias valuedc-2', export the DC voltage of appropriate value so that sorption and desorption of the electrostatic chuck to wafer
Releasing effect is stablized, and ensures smaller plasma damage（PID）.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (11)
1. a kind of Dc bias measurement method, which is characterized in that include following procedure：
Electrode power supply of the DC power supply into electrostatic chuck is controlled, is provided the direct current of the smooth sorption of wafer on electrostatic chuck
Press VHV, detect the leakage current I numerical value of the DC power supply under stable state；
According to the leakage current I, and obtain the DC voltage V of the DC power supplyHVNumerical value and electrostatic chuck where plasma
The system resistance value R of body processing unit, based on Ohm's law I=（VHV-Vdc-2）It is inclined to seek the second direct current present on wafer by/R
Pressure value Vdc-2。
2. Dc bias measurement method as described in claim 1, which is characterized in that also include following procedure：
Obtain the voltage Vpp of the radio-frequency power supply RF of electrostatic chuck；
According to the empirical equation V between wafer Dc bias and the voltage Vpp of the radio-frequency power supply RFdc-1=F (Vpp), to seek
First DC bias value V present on waferdc-1；
Again by the first DC bias value Vdc-1DC power supply is fed back to, to control the initial DC voltage of DC power supply output
VHV。
3. Dc bias measurement method as claimed in claim 2, which is characterized in that
By DC power supply according to the first DC bias value Vdc-1DC voltage V caused by feedbackHV, provided to wafer
Practical sorptive force be more than sorption wafer needed for necessary sorptive force, to ensure wafer by smooth sorption.
4. Dc bias measurement method as described in claim 1, which is characterized in that
The system resistance value R is the resistance after the equivalent internal resistance of DC power supply is connected with the equiva lent impedance of electrostatic chuck and wafer
Value；Alternatively, the system resistance value R is by the equiva lent impedance of the equivalent internal resistance of DC power supply, electrostatic chuck and wafer, plasma
Resistance value after the equiva lent impedance series connection of plasma in body processing unit reaction chamber.
5. Dc bias measurement method as claimed in claim 1 or 2, which is characterized in that
By the second DC bias value Vdc-2DC power supply is fed back to, to adjust the DC voltage V of DC power supply offerHV's
Numerical value completes the adjustment to the sorptive force of wafer when detecting that leakage current I numerical value is given current value I '.
6. a kind of Dc bias measuring system, which is characterized in that include：
Radio-frequency voltage reading unit obtains the voltage of radio-frequency power supply RF outputs from the radio-frequency power supply RF of electrostatic chuck
Vpp；
First arithmetic device receives the voltage Vpp that the radio-frequency voltage reading unit obtains, and is based on empirical equation Vdc-1=F
(Vpp), the first DC bias value V present on the wafer in electrostatic chuck sorption is calculateddc-1And feed back to DC power supply；
DC voltage reading unit obtains the DC voltage V to sorption wafer from DC power supplyHV；
Leakage current test unit is connected to the DC power supply and is detected to obtain leakage current I；
Second arithmetic device receives the DC voltage V that the DC voltage reading unit obtains respectivelyHV, and leakage current inspection
The leakage current I that unit measures is surveyed, and according to the system resistance value R of plasma processing apparatus where electrostatic chuck, is based on ohm
Law I=（VHV-Vdc-2）The second DC bias value V present on current wafer is calculated in/Rdc-2。
7. a kind of sorptive force method of adjustment, which is characterized in that include following procedure：
The electrode power supply of step 1, control DC power supply into electrostatic chuck, is provided the smooth sorption of wafer on electrostatic chuck
DC voltage VHVWhen, detect the leakage current I of the DC power supply under stable state；
Step 2 compares the numerical value of leakage current I and the given current value I ' of plasma processing apparatus where electrostatic chuck
Compared with, if leakage current I and given current value I ' is unanimously, progress step 5；If leakage current I and given current value I ' are inconsistent, walked
Rapid 3；
The DC voltage V that step 3, DC power supply provide itHVNumerical value be adjusted, and then make the electric leakage of the DC power supply
Stream I is adjusted therewith；
The numerical value of adjustment back leak electric current I under step 4, detection stable state, by the numerical value of leakage current I after adjustment and given current value
I ' is compared, if the numerical value of leakage current I and given current value I ' are unanimously after adjustment, carries out step 5；If leakage current I after adjustment
Numerical value and given current value I ' it is inconsistent, again execute step 3；
Step 5, the basis leakage current I consistent with given current value I ' numerical value, and obtain the DC voltage V of the DC power supplyHV,
And the system resistance value R of plasma processing apparatus, based on Ohm's law I=（VHV-Vdc-2’）/ R, seeks present on wafer
The given value V of second DC bias valuedc-2’。
8. sorptive force method of adjustment as claimed in claim 7, which is characterized in that also include following procedure：
Obtain the voltage Vpp of the radio-frequency power supply RF of electrostatic chuck；
According to the empirical equation V between wafer Dc bias and the voltage Vpp of the radio-frequency power supply RFdc-1=F (Vpp), to seek
First DC bias value V present on waferdc-1；
Again by the first DC bias value Vdc-1DC power supply is fed back to, ensures wafer by the DC voltage of smooth sorption to generate
VHV。
9. sorptive force method of adjustment as claimed in claim 7, which is characterized in that
According to leakage current I and DC voltage VHVNumerical value in electrifying DC power supply or after each adjustment and system resistance value
R, based on Ohm's law I=（VHV-Vdc-2）/ R seeks real-time existing second DC bias value V on waferdc-2。
10. sorptive force method of adjustment as claimed in claim 7, which is characterized in that
In step 3, if leakage current I is less than given current value, DC power supply is by increasing DC voltage VHVNumerical value, come increase leakage
Electric current I；
If leakage current I is more than given current value, DC power supply is by reducing DC voltage VHVNumerical value, to reduce leakage current I.
11. a kind of sorptive force adjusts system, which is characterized in that include：
Radio-frequency voltage reading unit obtains the voltage of radio-frequency power supply RF outputs from the radio-frequency power supply RF of electrostatic chuck
Vpp；
First arithmetic device receives the voltage Vpp that the radio-frequency voltage reading unit obtains, and is based on empirical equation Vdc-1=F
(Vpp), the first DC bias value V present on the wafer in electrostatic chuck sorption is calculateddc-1And feed back to DC power supply；
DC voltage reading unit obtains the DC voltage V to sorption wafer from DC power supplyHV；
Leakage current test unit is connected to the DC power supply and is detected to obtain leakage current I；
Constant current reading unit is given, to obtain the given current value I ' of electrostatic chuck place plasma processing apparatus；
Leakage current comparing unit, from leakage current test unit and gives constant current reading unit, receives leakage current I respectively and gives
Current value I ' carries out numeric ratio pair；
Second arithmetic device, when the electric current comparison result of leakage current comparing unit is inconsistent, described in the second arithmetic device reception
The leakage current I that leakage current test unit measures also receives the DC voltage V that the DC voltage reading unit obtainsHV, and according to
The system resistance value R of plasma processing apparatus, based on Ohm's law I=（VHV-Vdc-2）/ R is calculated on wafer current the
Two DC bias value Vdc-2, and by the second DC bias value Vdc-2DC power supply is fed back to, is provided to adjust DC power supply
DC voltage VHVNumerical value, realize the adjustment to the sorptive force of wafer；
When the electric current comparison result of leakage current comparing unit is consistent, the second arithmetic device is according to current DC voltage VHV、
The leakage current I consistent with given current value I ' numerical value that system resistance value R, leakage current test unit measure is based on Ohm's law I
=（VHV-Vdc-2’）The given value V of the second DC bias value is calculated in/Rdc-2’；DC power supply can be according to second direct current
The given value V of bias valuedc-2', the DC voltage of appropriate value is exported, the necessary sorptive force to wafer is provided.
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| CN201410726706.6A CN105717337B (en) | 2014-12-04 | 2014-12-04 | Dc bias measuring system and method adjust system and method with sorptive force |
| TW104127778A TWI573221B (en) | 2014-12-04 | 2015-08-25 | DC bias measuring system and method and suction force adjusting system and method thereof |
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| US7218503B2 (en) * | 1998-09-30 | 2007-05-15 | Lam Research Corporation | Method of determining the correct average bias compensation voltage during a plasma process |
| CN101211752A (en) * | 2006-12-30 | 2008-07-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and device for controlling wafer DC auto-bias and compensating electrostatic gravitational force between direct current electrode and water |
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