CN105680297A - Laser driving circuit of half-bridge/inversion circuit - Google Patents
Laser driving circuit of half-bridge/inversion circuit Download PDFInfo
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- CN105680297A CN105680297A CN201610213613.2A CN201610213613A CN105680297A CN 105680297 A CN105680297 A CN 105680297A CN 201610213613 A CN201610213613 A CN 201610213613A CN 105680297 A CN105680297 A CN 105680297A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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Abstract
Description
技术领域technical field
本发明涉及一种激光器的驱动电路,属于光电子技术领域。The invention relates to a driving circuit of a laser, belonging to the field of optoelectronic technology.
背景技术Background technique
激光器的种类有很多种,像固体激光器,气体激光器,半导体激光器,光纤激光器等等。在这些激光器当中,除部分半导体激光器属于直接电流泵浦之外,其余激光器基本上都是通过泵浦源进行泵浦的,特别是对于大功率的激光器,需要使用大功率的驱动电路对泵浦源进行驱动,从而产生大功率的泵浦光,但是现有技术中一般是针对不同的激光器设计不同的驱动电路,一般的驱动电路很少通过简单改变即可适用到其它激光器上。并且,对于大功率激光器的驱动电路来说,高功率激光器一般需要的驱动电压也比较高,此时,变压器不易设计,主要体现在绝缘不好,寄生电容大,漏感大等问题,再者这样电路中变压器的次级器件不容易选取。本发明正是针对上述问题而提出来的。There are many types of lasers, such as solid-state lasers, gas lasers, semiconductor lasers, fiber lasers and so on. Among these lasers, except for some semiconductor lasers that are directly pumped by current, the rest of the lasers are basically pumped by the pump source, especially for high-power lasers, it is necessary to use a high-power drive circuit for pumping. The source is driven to generate high-power pump light, but in the prior art, different driving circuits are generally designed for different lasers, and general driving circuits are seldom applicable to other lasers through simple changes. Moreover, for the driving circuit of high-power lasers, the driving voltage generally required by high-power lasers is also relatively high. At this time, the transformer is not easy to design, mainly due to problems such as poor insulation, large parasitic capacitance, and large leakage inductance. It is not easy to select the secondary device of the transformer in this circuit. The present invention proposes at the above-mentioned problem just.
发明内容Contents of the invention
根据本发明的一实施例,提供了一种软开关逆变电路激光器驱动电路,具体组成如下:According to an embodiment of the present invention, a soft-switching inverter circuit laser drive circuit is provided, and the specific composition is as follows:
包括输入端,其中输入端包括正输入端vin+和负输入端vin-,正输入端分别连接到电容C1的一端,电容C2的一端以及绝缘栅型场效应晶体管IGBT1的集电极,电容C2的另外一端连接到电容C3的一端,变压器T1初级线圈的一端以及电流传感器ISEN1的一个输入端,电流传感器ISEN1的另外一个输入端连接电感L3的一端,电感L3的另外一端与变压器T1初级线圈的另外一端连接之后共同连接到绝缘栅型场效应晶体管IGBT1的发射极和绝缘栅型场效应晶体管IGBT2的集电极,负输入端vin-与电容C1和C3的另外一端连接后共同连接到IGBT2的发射极,IGBT1和IGBT2的门极都连接到微处理器MCU。变压器T1次级的两个输出端,一个输出端连接二极管D1的阴极和二极管D2的阳极,另外一个输出端连接二极管D3的阴极和二极管D4的阳极,D2和D4的阳极都连接到电感L2的一端,二极管D1和D3的阳极都连接到直流滤波电容Cd的一端,直流滤波电容Cd的另外一端连接到电感L2的另外一端,输出电压检测电路和电感R3均与直流滤波电容Cd并联。输出电压检测电路的输出以及电流传感器ISEN1的输出端均连接到微处理器MCU。电阻R3的一端还连接到可控硅SCR的阳极,SCR的阴极连接到激光器的一端,电阻R3的另外一端还连接到激光器的另外一端。Including the input terminal, wherein the input terminal includes a positive input terminal vin+ and a negative input terminal vin-, the positive input terminal is respectively connected to one end of the capacitor C1, one end of the capacitor C2 and the collector of the insulated gate field effect transistor IGBT1, and the other of the capacitor C2 One end is connected to one end of the capacitor C3, one end of the primary coil of the transformer T1 and one input end of the current sensor ISEN1, the other input end of the current sensor ISEN1 is connected to one end of the inductor L3, and the other end of the inductor L3 is connected to the other end of the primary coil of the transformer T1 After the connection, it is commonly connected to the emitter of the insulated gate field effect transistor IGBT1 and the collector of the insulated gate field effect transistor IGBT2, and the negative input terminal vin- is connected to the other end of the capacitors C1 and C3 and then is commonly connected to the emitter of the IGBT2. Both the gates of IGBT1 and IGBT2 are connected to the microprocessor MCU. The two output terminals of the secondary of the transformer T1, one output terminal is connected to the cathode of the diode D1 and the anode of the diode D2, and the other output terminal is connected to the cathode of the diode D3 and the anode of the diode D4, and the anodes of D2 and D4 are connected to the inductor L2 At one end, the anodes of diodes D1 and D3 are connected to one end of DC filter capacitor Cd, the other end of DC filter capacitor Cd is connected to the other end of inductor L2, and the output voltage detection circuit and inductor R3 are connected in parallel with DC filter capacitor Cd. The output of the output voltage detection circuit and the output terminal of the current sensor ISEN1 are connected to the microprocessor MCU. One end of the resistor R3 is also connected to the anode of the thyristor SCR, the cathode of the SCR is connected to one end of the laser, and the other end of the resistor R3 is also connected to the other end of the laser.
附图说明Description of drawings
附图1是本发明的激光器驱动电路的示意图。Accompanying drawing 1 is the schematic diagram of the laser drive circuit of the present invention.
具体实施方式detailed description
下面将在结合附图的基础上详细描述本发明的激光器驱动电路。本发明的激光器驱动电路具体组成如下:The laser driving circuit of the present invention will be described in detail below in conjunction with the accompanying drawings. The specific composition of the laser drive circuit of the present invention is as follows:
包括输入端,其中输入端包括正输入端vin+和负输入端vin-,正输入端分别连接到电容C1的一端,电容C2的一端以及绝缘栅型场效应晶体管IGBT1的集电极,电容C2的另外一端连接到电容C3的一端,变压器T1初级线圈的一端以及电流传感器ISEN1的一个输入端,电流传感器ISEN1的另外一个输入端连接电感L3的一端,电感L3的另外一端与变压器与变压器T初级线的另外一端连接后共同连接到绝缘栅型场效应晶体管IGBT1的发射极和绝缘栅型场效应晶体管IGBT2的集电极,负输入端vin-与电容C1和C3的另外一端连接后共同连接到IGBT2的发射极,IGBT1和IGBT2的门极都连接到微处理器MCU。变压器T1次级的两个输出端,一个输出端连接二极管D1的阴极和二极管D2的阳极,另外一个输出端连接二极管D3的阴极和二极管D4的阳极,D2和D4的阳极都连接到电感L2的一端,二极管D1和D3的阳极都连接到直流滤波电容Cd的一端,直流滤波电容Cd的另外一端连接到电感L2的另外一端,输出电压检测电路和电感R3均与直流滤波电容Cd并联。输出电压检测电路的输出以及电流传感器ISEN1的输出端均连接到微处理器MCU。电阻R3的一端还连接到可控硅SCR的阳极,SCR的阴极连接到激光器的一端,电阻R3的另外一端还连接到激光器的另外一端。Including the input terminal, wherein the input terminal includes a positive input terminal vin+ and a negative input terminal vin-, the positive input terminal is respectively connected to one end of the capacitor C1, one end of the capacitor C2 and the collector of the insulated gate field effect transistor IGBT1, and the other of the capacitor C2 One end is connected to one end of the capacitor C3, one end of the primary coil of the transformer T1 and one input end of the current sensor ISEN1, the other input end of the current sensor ISEN1 is connected to one end of the inductor L3, and the other end of the inductor L3 is connected to the primary line of the transformer and the transformer T The other end is connected to the emitter of the insulated gate field effect transistor IGBT1 and the collector of the insulated gate field effect transistor IGBT2, and the negative input terminal vin- is connected to the other end of the capacitors C1 and C3 to be connected to the emitter of the IGBT2 The gates of IGBT1 and IGBT2 are connected to the microprocessor MCU. The two output terminals of the secondary of the transformer T1, one output terminal is connected to the cathode of the diode D1 and the anode of the diode D2, and the other output terminal is connected to the cathode of the diode D3 and the anode of the diode D4, and the anodes of D2 and D4 are connected to the inductor L2 At one end, the anodes of diodes D1 and D3 are connected to one end of DC filter capacitor Cd, the other end of DC filter capacitor Cd is connected to the other end of inductor L2, and the output voltage detection circuit and inductor R3 are connected in parallel with DC filter capacitor Cd. The output of the output voltage detection circuit and the output terminal of the current sensor ISEN1 are connected to the microprocessor MCU. One end of the resistor R3 is also connected to the anode of the thyristor SCR, the cathode of the SCR is connected to one end of the laser, and the other end of the resistor R3 is also connected to the other end of the laser.
本发明为一种半桥\逆变电路激光器驱动电路。其中C1,C2,C3为直流滤波电容,D1,D2,D3,D4,L2,Cd为输出整流滤波电路,R1,R2为驱动电阻,MCU为控制器。The invention is a half-bridge\inverter circuit laser driving circuit. Among them, C1, C2, and C3 are DC filter capacitors, D1, D2, D3, D4, L2, and Cd are output rectification filter circuits, R1, R2 are drive resistors, and MCU is a controller.
工作方式如下,IGBT1导通,后关断,后IGBT2导通,后又关断,如此循环。其中IGBT1,与IGBT2的导通时间相同,导通时间由需要的输出电压决定,需要的输出电压高时,MCU输出IGBT1和IGBT2的驱动脉冲宽度变大,需要的输出电压低时,MCU输出IGBT1和IGBT2的驱动脉冲变小,通过调节驱动脉冲的大小来达到控制输出电压的目的。The working method is as follows, IGBT1 is turned on, then turned off, then IGBT2 is turned on, then turned off, and so on. Among them, the conduction time of IGBT1 and IGBT2 is the same, and the conduction time is determined by the required output voltage. When the required output voltage is high, the driving pulse width of MCU outputting IGBT1 and IGBT2 becomes larger. When the required output voltage is low, MCU outputs IGBT1. The driving pulse of IGBT2 and IGBT2 becomes smaller, and the purpose of controlling the output voltage is achieved by adjusting the size of the driving pulse.
由于实际电路中器件参数的差异,IGBT2和IGBT1的导通时间不可能完全相同,这会在变压器T1上产生一个直流分量,此直流分量的累加可能会导致变压器T1饱和。实际中解决此问题可以与T1串接隔直电容阻断直流通路,但是此方法成本昂贵。也可以在T1初级加入电流检测装置,时刻检测直流分量,从而时刻调节IGBT2和IGBT1导通之间达到消除直流分量的目的。但是由于一般回路中交流电流很大,而直流分量可能不到整个电流的1%,而这个小的直流分量就有可能导致变压器饱和,能检测整个电流范围的电流检测装置在检测小的直流分量时,精度不够,可能根本检测不到直流分量,小的量程的电流检测装置精度好,但是在这种大电流的情况下,无法应用。Due to the difference in device parameters in the actual circuit, the conduction time of IGBT2 and IGBT1 cannot be exactly the same, which will generate a DC component on the transformer T1, and the accumulation of this DC component may cause the saturation of the transformer T1. To solve this problem in practice, a DC blocking capacitor can be connected in series with T1 to block the DC path, but this method is expensive. It is also possible to add a current detection device at the primary stage of T1 to detect the DC component at all times, so as to adjust the conduction between IGBT2 and IGBT1 at all times to achieve the purpose of eliminating the DC component. However, due to the large AC current in the general circuit, the DC component may be less than 1% of the entire current, and this small DC component may cause the transformer to saturate. The current detection device that can detect the entire current range is detecting the small DC component. When the accuracy is not enough, the DC component may not be detected at all. The current detection device with a small range has good accuracy, but it cannot be applied in the case of such a large current.
本发明在T1初级并入电感L3,且在L3上串接电流检测装置ISEN1,L3的电感量远大于L1的电感量和T1的励磁电感,但是L3的直流阻抗R远小于L1的直流阻抗和T1的直流阻抗,这样,回路中的交流电流极少流过L3,但是大部分的直流分量会通过L3,这样ISEN1就可以用小量程高精度电流检测装置,精确测量直流分量大小,从而时刻调节IGBT2和IGBT1导通时间达到消除直流分量的目的。In the present invention, an inductance L3 is incorporated into the primary stage of T1, and a current detection device ISEN1 is connected in series on L3. The inductance of L3 is much greater than the inductance of L1 and the excitation inductance of T1, but the DC resistance R of L3 is much smaller than the DC resistance and The DC impedance of T1, in this way, the AC current in the loop seldom flows through L3, but most of the DC component will pass through L3, so that ISEN1 can use a small-range high-precision current detection device to accurately measure the size of the DC component, so as to adjust at all times The conduction time of IGBT2 and IGBT1 achieves the purpose of eliminating the DC component.
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CN109378704A (en) * | 2017-03-23 | 2019-02-22 | 英飞凌科技股份有限公司 | Circuit and method for driving a laser diode |
CN109863654A (en) * | 2016-10-14 | 2019-06-07 | 伟摩有限责任公司 | GaNFETs as energy storage for fast laser pulse generators |
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