CN105656323A - Power conversion device and railway vehicle including the same - Google Patents
Power conversion device and railway vehicle including the same Download PDFInfo
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- CN105656323A CN105656323A CN201510809734.9A CN201510809734A CN105656323A CN 105656323 A CN105656323 A CN 105656323A CN 201510809734 A CN201510809734 A CN 201510809734A CN 105656323 A CN105656323 A CN 105656323A
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- power
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- 238000006243 chemical reaction Methods 0.000 title abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 104
- 239000003990 capacitor Substances 0.000 claims abstract description 100
- 239000000463 material Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 239000004744 fabric Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000024241 parasitism Effects 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- KXLUWEYBZBGJRZ-POEOZHCLSA-N Canin Chemical compound O([C@H]12)[C@]1([C@](CC[C@H]1C(=C)C(=O)O[C@@H]11)(C)O)[C@@H]1[C@@]1(C)[C@@H]2O1 KXLUWEYBZBGJRZ-POEOZHCLSA-N 0.000 description 1
- GPFVKTQSZOQXLY-UHFFFAOYSA-N Chrysartemin A Natural products CC1(O)C2OC2C34OC3(C)CC5C(CC14)OC(=O)C5=C GPFVKTQSZOQXLY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/66—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal
- H02M7/68—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters
- H02M7/72—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/79—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/797—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L9/00—Electric propulsion with power supply external to the vehicle
- B60L9/16—Electric propulsion with power supply external to the vehicle using AC induction motors
- B60L9/18—Electric propulsion with power supply external to the vehicle using AC induction motors fed from DC supply lines
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L2210/00—Converter types
- B60L2210/40—DC to AC converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Transportation (AREA)
- Mechanical Engineering (AREA)
- Electric Propulsion And Braking For Vehicles (AREA)
Abstract
A power conversion device and a railway vehicle including the same are disclosed. The issue of the invention is to unifyand reduce surge voltages resulting from parasitic inductances at the time of switching in the power conversion device in which a plurality of semiconductor modules is connected in parallel. The device includes first and second capacitors, and first and second semiconductor modules. The positive terminals of the first and second capacitors and positive terminals of the first and second semiconductor modules are connected by positive wiring. Negative terminals of the first and second capacitors and negative terminals of the first and second semiconductor modules are connected by negative wiring. The first capacitor is connected to first ends of the positive wiring and the negative wiring via the positive terminal and the negative terminal and the second capacitor is connected to second ends of the positive wiring and the negative wiring via the positive terminal and the negative terminal. The first and second semiconductor modules are connected by the positive wiring via the positive terminals and connected by the negative wiring via the negative terminals in areas between the first ends and the second ends of the positive wiring and the negative wiring. The arrangement is particularly suitable for a railway vehicle.
Description
Technical field
The present invention relates to power-converting device.
Background technology
In recent years, in inverter, the power-converting device of converter representative, applied semiconductor module,This semiconductor module is equipped with multiple IGBT (InsulatedGateBipolar in order to reduce the wastageTransistor, insulated gate bipolar transistor)), MOSFET (MetalOxcideSemiconductorFieldEffectTransistor, mos field effect transistor) etc.
Although form the material of semiconductor module always centered by Si (Silicon) and develop,For the further reduction of loss, studying SiC (SiliconCarbide, carborundum),The application of the wide band gap semiconducter of GaN (GalliumNitride, gallium nitride) etc. SiC is compared with SiBreaker acting speed high speed can be made, and switching loss can be reduced.
On the other hand, result from the capacitor and the semiconductor module that form power-converting device are connectedThe stray inductance of the wiring connecing can produce the high voltage surge voltage of moment in the time of switch motion. OneAs, if make breaker acting speed high speed, surge voltage can increase. If this surge voltage existsDifferent or exceed the maximum rated of semiconductor module in each semiconductor module, can become deteriorated, thereforeThe reason of barrier.
As the background technology of the art, there is TOHKEMY 2009-153246 communique (patentDocument 1). In this communique, record and " be connected in the semiconductor module of output stage by being respectively in parallelPiece forms DC-AC translation circuit, and above the semiconductor module of each phase via electric capacityDevice supporting tool supports the position of connecting electrode to multiple electrolytic capacitors alternately, by each phaseThe semiconductor module connecting portion of the direct current conductor the installed each electrolytic capacitor that is connected in parallel that is connected in parallel,And connect each cross streams conductor at the outlet side of each phase semiconductor module. ".
Formerly technical literature
Patent documentation
Patent documentation 1:JP JP 2009-153246 communique
Summary of the invention
The problem that invention will solve
As the method that suppresses the surge voltage producing at semiconductor element as mentioned above, exist by pictureAbove-mentioned patent documentation 1 shortens the length of wiring like that, reduces the method for the stray inductance of wiring. ButBe, even if the stray inductance of wiring is lowered, if but the length of arrangement wire of capacitor and semiconductor module interblockThere is deviation, can in the stray inductance between each semiconductor module and capacitor, produce deviation, respectivelyThe surge voltage that semiconductor module produces occurs unbalance, easily occurs bad at specific semiconductor module, as a result of there is the problem such as the reliability decrease of power-converting device in change, fault.
Therefore, the object of the invention is to, make the wiring that capacitor is connected with semiconductor moduleStray inductance homogenising realize the homogenising of the surge voltage producing at each semiconductor module.
For solving the means of problem
In order to solve above-mentioned problem, the formation that adopts for example claims to record. The application comprisesThe means of the above-mentioned problem of multiple solutions, if enumerate a wherein example, are a kind of power-converting devices, itsBe characterised in that to possess the first and second capacitor and the first and second semiconductor module, firstAnd the positive terminal of described the second capacitor and first and the positive pole of described the second semiconductor moduleTerminal is connected with positive side wiring, the negative terminal of the first and second capacitor and first and the second halfThe negative terminal of conductor module is connected by minus side wiring, and the first capacitor is via positive terminal and negative pole endSon, is connected in one end that positive side wiring and minus side connect up, and the second capacitor is via positive terminal and negativeGate terminal, is connected in the other end that positive side wiring and minus side connect up, the first and second semiconductor moduleOne end in positive side and minus side wiring of piece and the region between the other end, via positive terminal with justSide wiring connects, and is connected with minus side wiring via negative terminal.
Invention effect
Realize the homogenising of the surge voltage producing at each semiconductor module of power-converting device.
Brief description of the drawings
Fig. 1 is the rail truck that becomes the application examples of the power-converting device of embodiments of the invention 1The schematic diagram of drive unit.
Fig. 2 is the circuit diagram of the Monophase electric power converting means of record in embodiments of the invention 1.
Fig. 3 is the action waveforms of the Monophase electric power converting means of record in embodiments of the invention 1.
Fig. 4 is the decomposition plan view of the Monophase electric power converting means of record in embodiments of the invention 1.
Fig. 5 is the top view of the Monophase electric power converting means of record in embodiments of the invention 1.
Fig. 6 is the capacitor of recording in embodiments of the invention 1.
Fig. 7 is the capacitor module of recording in embodiments of the invention 1.
Fig. 8 is the decomposition plan view of the Monophase electric power converting means of record in embodiments of the invention 2.
Fig. 9 is the circuit diagram of the 3-phase power conversion device of record in embodiments of the invention 3.
Figure 10 is the top view of the 3-phase power conversion device of record in embodiments of the invention 3.
Figure 11 is the decomposition plan view of the Monophase electric power converting means of record in embodiments of the invention 4.
Figure 12 is the decomposition plan view of Monophase electric power converting means as a comparative example.
Detailed description of the invention
Utilize accompanying drawing to describe embodiment below. In addition, in accompanying drawing and embodiment, adoptMOSFET is as semiconductor module, but the present invention also can be applied to IGBT.
[embodiment 1]
Fig. 1 is the signal that becomes the drive unit of the rail truck of an example of application of the present inventionFigure. The drive unit of rail truck is provided electric power from stringing 2 via current collecting equipment, and via electricityForce conversion system 1 provides the alternating electromotive force of variable voltage variable frequency to motor 111, it is right to come thusMotor 111 drives. Motor 111 links with the axletree of rail truck, by motor 111Control travelling of rail truck. Connect via track 3 electrical ground. At this, the voltage of stringing 2Can be any one in direct current and interchange, say taking DC voltage as 1500V belowBright. Be that interchange, drive unit is at power-converting device 1 and stringing at the voltage of stringing 2Between carry exchange conversion become to the converter apparatus of direct current.
Fig. 2 is the circuit diagram of the Monophase electric power converting means 4 shown in embodiments of the invention 1. Single-phasePower-converting device 4 is by dc source 101 is carried out to level and smooth capacitor 102～103 and switch unitPart Q1～Q4 forms. Respectively same envelope having used switch element Q1, Q2 and Q3, Q4In the situation of the 2in1 packaging part of piece installing, Monophase electric power converting means 4 by have switch element Q1,The semiconductor module 108 of Q2 forms with the semiconductor module 109 with switch element Q3, Q4.Capacitor 102～103 can be any one in electrolytic capacitor, thin film capacitor, also canIn order to make capacitor 102～103 high capacities therein by the capacitor unit of many low capacitiesBe connected in parallel to form. At this, in the situation that switch element Q1～Q4 is IGBT, needTo oppositely be connected in parallel to diode D1～D4 respectively with IGBT, and at switch elementQ1～Q4 is in the situation of MOSFET, can utilize the parasitic diode of MOSFET as twoUtmost point pipe D1～D4. In addition, record the drain electrode of switch element Q1 with D, record with GGate electrode, records source electrode with S.
Semiconductor module 108 is connected in series and is formed by switch element Q1 and Q2, switch element Q1Become the output point that exchanges to motor 111 with the tie point of Q2. Similarly, semiconductor module 109Be connected in series and formed by switch element Q3 and Q4, the tie point of switch element Q3 and Q4 becomesTo the interchange output point of motor 111.
For capacitor 102～103 and semiconductor module 108,109 are electrically connected and use clothLine. In this wiring, there is stray inductance 104,105,106, its value depend on wiring material,Length, shape. Fig. 3 is the action waveforms of embodiments of the invention 1. As Monophase electric power conversion dressPut 4 action and be configured to: provide direct current power from dc source 101, by switch element Q1～Q4 carries out switch motion and is transformed into alternating electromotive force, and motor 111 is driven. Below to openClosing element Q1 is that example describes.
In the time of t=t0, between the gate-to-source of switch element Q1, voltage VGS is 0V. Now switchElement Q1 is in cut-off (OFF) state, and therefore drain electrode-voltage between source electrodes VDS applies direct currentThe 1500V in source 101, drain current ID does not flow.
In the time of t=t1, if voltage VGS is applied in the unlatching of switch element Q1 between gate-to-sourceSuch as 15V of voltage more than threshold voltage, switch element Q1 becomes conducting (ON) state, leaksElectrode current ID starts to flow. The ON time of switch element Q1 is come by the electric current that flows to motor 111Control, for example, carry out PWM (PulseWidthModulation, pulsewidth modulation) and control.
In the time of t=t2, between the gate-to-source of switch element Q1, voltage VGS becomes 0V, changes intoCut-off state. Now, drain current ID follows current changing rate di/dt and electric current reduces to 0A,Therefore the stray inductance of the wiring between capacitor 102～103 and semiconductor module 108,109104, produce induced electromotive force in 105,106. , electricity between drain electrode-source electrode of switch element Q1Press VDS to produce the surge voltage 11 of moment, if the maximum rated voltage that exceedes switch element Q1Monophase electric power converting means 4 can break down.
The timing of the grid cut-off of t=t4, t6, t8 also with t=t2 similarly, at switch element Q1Grid voltage VGS produce surge voltage 11 when becoming 0V and changing cut-off state into. This surgeVoltage calculates by the multiplying of the value of current changing rate di/dt and wiring parasitic inductance. Although oneAs current changing rate di/dt there are differences according to each switch element Q1～Q4, but capacitor 102,103 and semiconductor module 108,109 between the difference of wiring parasitic inductance give surge voltage 11Affect larger. The surge, producing at switch element Q1～Q4 due to the difference of wiring parasitic inductanceVoltage 11 differences. Therefore, in the larger situation of difference of the wiring parasitic inductance of each semiconductor intermoduleUnder, there are the different such problems of progress of deteriorated, the fault of switch element Q1～Q4. Therefore,Make the wiring parasitic inductance homogenising of each semiconductor intermodule become problem. In addition more preferably make,Its reduction becomes problem.
In addition, if even reduction switching loss and make breaker acting speed high speed curent changeIt is large that rate di/dt becomes, the parasitism between capacitor 102,103 and semiconductor module 108,109It is large that the induced electromotive force producing in inductance becomes, and therefore can become Monophase electric power converting means 4 and break downReason. , can make breaker acting speed high speed in use compared with existing Si switch elementUtilization in the situation of switch element of SiC, GaN, above-mentioned problem becomes more remarkable.
Fig. 4 is the decomposition inclination figure of the Monophase electric power converting means 4 shown in embodiments of the invention 1,Fig. 5 is the inclination figure of the Monophase electric power converting means 4 shown in embodiments of the invention 1. Capacitor102, the positive lateral electrode of 103 positive lateral electrode and semiconductor module 108,109 is used positive side busbar(busbar) 201 be electrically connected, the minus side electrode of capacitor 102,103 and semiconductor module 108,109 minus side electrode is electrically connected with minus side busbar 202. At this, positive side busbar 201,, there is respectively stray inductance in minus side busbar 202, the Size-dependent of stray inductance is in current pathMaterial, length, shape.
Because design, manufacturing process are complicated thereby can't be according to each semiconductor module in realityChange material, the shape of wiring. Therefore, as mentioned above, for make each semiconductor module 108,In 109 till the stray inductance homogenising of the wiring of capacitor 102,103 need to make from partly leadingThe positive lateral electrode of module 108 turns back to the minus side electrode of semiconductor module 108 via capacitor 102Cloth line length and turn back to semiconductor module from the positive lateral electrode of semiconductor module 108 via capacitor 103The summation of the cloth line length of the minus side electrode of piece 108, with positive lateral electrode from semiconductor module 109 viaCapacitor 102 turn back to semiconductor module 109 minus side electrode cloth line length and from semiconductor module109 positive lateral electrode turns back to the wiring of the minus side electrode of semiconductor module 109 via capacitor 103Long summation is roughly equal.
Therefore as shown in Figure 4, connect up by positive side, by each semiconductor module just in the present invention,Lateral electrode is connected with the positive lateral electrode of two capacitors 102,103, connects up by minus side, willThe minus side electrode of each semiconductor module is connected with the minus side electrode of two capacitors 102,103,And in positive side wiring and minus side wiring, will join with the tie point of each electrode of each semiconductor moduleBe set in and the tie point of each electrode of two capacitors 102,103 between. , capacitor 102Each electrode be connected in one end of positive side and minus side wiring, each electrode of capacitor 103 is just connected inThe other end of side and minus side wiring, and each electrode of semiconductor module 108,109 is just connected inThe central portion of side and minus side wiring.
By this formation, thereby can make the busbar cloth from capacitor 102 to semiconductor module 108The length of line 201,202, with busbar wiring 201 from capacitor 103 to semiconductor module 109,202 equal in length, and busbar from capacitor 102 to semiconductor module 109 wiring 201,202 length, with busbar wiring 201,202 from capacitor 103 to semiconductor module 108Equal in length. , the parasitism electricity between semiconductor module 108 and two capacitors 102,103Stray inductance between sense, semiconductor module 109 and two capacitors 102,103 becomes and equatesValue.
Illustrate that Figure 12 as a comparative example. In Figure 12, in positive side wiring and minus side wiring, withThe tie point of each electrode of each semiconductor module not with each electrode of two capacitors 102,103Tie point between, but wiring one end be connected with capacitor, at the other end and semiconductor moduleConnect. In the case of connecting according to such configuration, due to semiconductor module 109 with partly leadModule 108 is compared the position that can be disposed at more close capacitor on circuit, the parasitism therefore connecting upIn inductance, produce deviation.
Fig. 6 is the capacitor using in the Monophase electric power converting means 4 shown in embodiments of the invention 1102,103. As shown in Figure 5, positive side wiring and minus side wiring are configured to tabular, and, withNearer distance is configured abreast to each wiring, and the electric current of same amount is to reverse flow thus, because ofThis magnetic flux offsets and reduces wiring inductance, can reduce surge voltage.
In addition, these two capacitors 102,103 are configured at the mask of the opposition side of opposed faces electricityThe utmost point. By configured electrodes face as shown in Figure 4, Figure 5, thus can be by adjacent capacitor 102,103Configuration, therefore can be configured to a capacitor module by capacitor 102,103.
If capacitor 103 is given an example, with the face of the opposition side of opposed of capacitor 102There is positive lateral electrode 301～304 and minus side electrode 305～308. Although be provided with in the present invention8 electrode for capacitors 301～308, but just lateral electrode, minus side electrode respectively have 1. At this,If on the face of the configured electrodes of capacitor 103, have in the configuration of electrode for capacitors 301～308Deviation, can from the electric current of capacitor 102,103 output, occur unbalance, become capacitor 102,The reason of 103 deteriorated, fault. In order to eliminate this problem, capacitor 102,103 of the present inventionElectrode on the face of configured electrodes equally spaced configuration. By by these capacitors 102,103Positive lateral electrode 301～304 is connected with positive side busbar 201, and by the minus side of capacitor 102,103Electrode 305～308 is connected with minus side busbar 202, thereby can make positive side busbar 201, minus sideThe CURRENT DISTRIBUTION homogenising of busbar 202, can near the electricity of suppression capacitor electrode 301～308In adfluxion. In addition, by positive lateral electrode 301～304 and minus side electrode 305～308 are handed over respectivelyBe configured to zigzag, thereby positive side busbar 201 becomes phase with the opposed area of minus side busbar wronglyDeng, make in positive side busbar 201, minus side busbar 202 the mobile respectively caused magnetic of electric currentThe effect that field offsets improves, and also can contribute to the reduction of stray inductance 104,105.
[embodiment 2]
Fig. 8 is the Monophase electric power converting means of recording in embodiments of the invention 2. Usually, makeWhen power-converting device high capacity, by multiple semiconductor modules are connected in parallel, increase electricityCurrent capacity. Fig. 8 is formation when multiple semiconductor modules are connected in parallel. Capacitor 102,103 with described Monophase electric power converting means 4 similarly, by the wiring of positive side and minus side wiring withThe tie point of each electrode of each semiconductor module 203～210 be configured in two capacitors 102,Between the tie point of each electrode of 103, this formation similarly to Example 1.
Semiconductor module 203～210 is connected in parallel respectively. At this, be made as semiconductor module 203～206Form respectively 1 support (1eg) of power-converting device with semiconductor module 207～210. Now,If from capacitor 102,103 to semiconductor module 203～210 cloth line length difference separately, can produceThe deviation of raw described surge voltage.
Therefore, use the busbar 201,202 of recording in embodiment 1, to multiple capacitors 102,103 are connected with semiconductor module 203～210. At this, make semiconductor module 203～206High-potential side electrode and low-potential side electrode align respectively in same direction, make semiconductor module207～210 high-potential electrode and low-potential electrode align respectively in same direction. By this structureBecome, thus the wiring of the busbar that capacitor 102 is connected with semiconductor module 203～206Long, with the cloth line length of the busbar that capacitor 103 and semiconductor module 207～210 are connectedEquate, and the cloth of the busbar that capacitor 102 is connected with semiconductor module 207～210Line length, with the wiring of the busbar that capacitor 103 and semiconductor module 203～206 are connectedAppearance etc. , stray inductance equates, does not therefore produce the deviation of surge voltage.
[embodiment 3]
Fig. 9 has applied the of the present invention of 3-phase power conversion device 5 as power-converting device 1Another embodiment. 3-phase power conversion device 5 by capacitor 102,103 and semiconductor module 108～110 form. 3-phase power conversion device 5 is that the direct current power of dc source 101 is transformed into interchangeElectric power the formation that threephase motor 311 is driven. At this, the action of switch element Q1 withAbove-mentioned identical, therefore omit. With described Monophase electric power converting means 4 similarly, use busbar 201The positive lateral electrode of capacitor 102,103 is electrically connected with the positive lateral electrode of semiconductor module 108～110,Use minus side busbar 202 by the minus side electrode of capacitor 102,103 and semiconductor module 108～110Minus side electrode electrical connection, in this wiring, there is stray inductance 104～106. This stray inductance 104～106 depend on the shape of wiring, if the value difference of stray inductance 104～106 can be at semiconductor module108～110 produce surge voltages in produce deviation, become 3-phase power conversion device 5 deteriorated,The reason of fault.
Figure 10 is the top view of the 3-phase power conversion device 5 of record in embodiments of the invention 2.Capacitor 102,103 is characterised in that, with described Monophase electric power converting means 4 similarly, will be justBeing connected of in side wiring and minus side wiring and each electrode each semiconductor module 108,109,110Point be configured in and the tie point of each electrode of two capacitors 102,103 between. In addition, halfConductor module 108～110 is arranged in same plane shape side by side. By this formation, thereby to capacitorThe cloth line length of 102 busbars that are connected with semiconductor module 108 with to capacitor 103 with partly leadThe wiring appearance of the busbar that module 109 connects etc. At this, to capacitor 102 with partly leadThe cloth line length of the busbar that module 110 connects and described to capacitor 102 and semiconductor moduleThe wiring appearance ratio of the busbar that piece 108 connects, physically grows with semiconductor module 108The corresponding amount of size. But, because positive side busbar 201 has formed parallel with minus side busbar 202Slab construction, sense of current mobile in positive side busbar 201 is with in minus side busbar 202Mobile sense of current is reverse each other, and therefore magnetic field offsets, stray inductance 104～106 definitelyValue becomes the little value to number nH. That is, stray inductance 105 is very little with the difference of stray inductance 106,Can there is not the problem of the deviation of surge voltage. Similarly, to capacitor 102 and semiconductor module 109The cloth line length of the busbar connecting with capacitor 103 and semiconductor module 108 be connectedThe wiring appearance of busbar etc., with respect to this, connect capacitor 103 and semiconductor module 110The cloth line length of the busbar connecing and the busbar that capacitor 102 and semiconductor module 109 are connectedWiring appearance shorter, stray inductance is also less. With similarly above-mentioned, due to parallel plate structureThereby the difference of stray inductance is very little, can there is not the problem that deviation appears in surge voltage.
[embodiment 4]
Figure 11 has applied the of the present invention of Monophase electric power converting means as power-converting device 1Another embodiment. In embodiment 1, though the electrode surface of two capacitors is disposed to rear side,But as shown in figure 11, also can be disposed at the same face. In this case, also by the wiring of positive side andIn minus side wiring and the tie point of each electrode each semiconductor module 108,109 be configured inBetween the tie point of each electrode of two capacitors 102,103, in this with other embodimentIdentical.
Symbol description
1 power-converting device
2 stringings
3 tracks
4 Monophase electric power converting means
5 3-phase power conversion devices
11 surge voltages
Q1～Q6 switch element
D1～D6 diode
101 dc sources
102,103 capacitors
104～106 stray inductances
108～110 semiconductor modules
111 single-phase motors
112 capacitor modules
201 positive side busbars
202 minus side busbars
203～210 low capacity semiconductor modules
The positive lateral electrode of 301～304 capacitors
The minus side electrode of 305～308 capacitors
311 threephase motors
Claims (8)
1. a power-converting device, is characterized in that,
Possess the first capacitor and the second capacitor and the first semiconductor module and the second semiconductorModule,
The positive terminal of described the first capacitor and described the second capacitor and described the first semiconductorThe positive terminal of module and described the second semiconductor module is connected with positive side wiring,
The negative terminal of described the first capacitor and described the second capacitor and described the first semiconductorThe negative terminal of module and described the second semiconductor module is connected by minus side wiring,
Described the first capacitor, via described positive terminal and described negative terminal, is connected in described positive sideOne end of wiring and the wiring of described minus side,
Described the second capacitor, via described positive terminal and described negative terminal, is connected in described positive sideThe other end of wiring and the wiring of described minus side,
Described the first semiconductor module and described the second semiconductor module in described positive side wiring andDescribed one end in minus side wiring and the region between the described other end, via described positive terminal and instituteState positive side wiring and connect, and be connected with described minus side wiring via described negative terminal.
2. power-converting device according to claim 1, is characterized in that,
Described power-converting device also possesses the 3rd semiconductor module,
The positive terminal of described the 3rd semiconductor module is connected with described positive side wiring,
The negative terminal of described the 3rd semiconductor module is connected with described minus side wiring,
Described the 3rd semiconductor module described one end in described positive side wiring and minus side wiring withRegion between the described other end, is connected with described positive side wiring via described positive terminal, and viaDescribed negative terminal is connected with described minus side wiring.
3. power-converting device according to claim 1 and 2, is characterized in that,
Described the first capacitor and the second capacitor are configured to a capacitor module.
4. according to the power-converting device described in any one in claim 1～3, it is characterized in that,
Described the first semiconductor module and the second semiconductor module possess respectively anti-parallel connection and have connectedThe first switch element of one diode has been connected the second switch element of the second diode with anti-parallel connection,And be configured to the electronegative potential terminal of described the first switch element and the high potential of described second switch elementTerminal connects.
5. according to the power-converting device described in any one in claim 1～4, it is characterized in that,
Described the first semiconductor module and the second semiconductor module possess be connected in parallel many in insideIndividual switch element.
6. according to the power-converting device described in any one in claim 1～5, it is characterized in that,
Described switch element is IGBT or MOSFET.
7. according to the power-converting device described in any one in claim 1～6, it is characterized in that,
Described switch element or described diode are with silicon or have the semiconductor material of the band gap larger than siliconMaterial is mother metal.
8. a rail truck, it possesses:
Power-converting device in claim 1～7 described in any one;
Motor, it is driven by described power-converting device; With
Current collecting equipment, it obtains electric power from stringing and offers described power-converting device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014240726A JP6457800B2 (en) | 2014-11-28 | 2014-11-28 | Power conversion device and railway vehicle equipped with the same |
| JP2014-240726 | 2014-11-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105656323A true CN105656323A (en) | 2016-06-08 |
| CN105656323B CN105656323B (en) | 2019-02-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510809734.9A Active CN105656323B (en) | 2014-11-28 | 2015-11-20 | Power-converting device and the rail truck for having the power-converting device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6457800B2 (en) |
| CN (1) | CN105656323B (en) |
| DE (1) | DE102015223002A1 (en) |
| GB (1) | GB2533212B (en) |
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| CN111742480A (en) * | 2018-02-22 | 2020-10-02 | 日本电产株式会社 | Inverter with a voltage regulator |
| CN111742481A (en) * | 2018-03-07 | 2020-10-02 | 三电控股株式会社 | Power conversion device |
| CN112152447A (en) * | 2019-06-27 | 2020-12-29 | 瑞萨电子株式会社 | Electronic device |
| CN112260560A (en) * | 2019-07-05 | 2021-01-22 | 松下知识产权经营株式会社 | Power conversion device |
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| EP3308996B1 (en) | 2016-10-11 | 2021-12-01 | ALSTOM Transport Technologies | An auxiliary converter for a railway vehicle |
| WO2018145746A1 (en) * | 2017-02-09 | 2018-08-16 | Rabb Schweiz Ag | High-voltage power electronic building block design |
| JP6906431B2 (en) * | 2017-11-22 | 2021-07-21 | 株式会社日立製作所 | Flow reducer |
| DE102019202777A1 (en) * | 2018-12-18 | 2020-06-18 | Robert Bosch Gmbh | Low inductance connector |
| WO2020250425A1 (en) * | 2019-06-14 | 2020-12-17 | 株式会社 東芝 | Semiconductor device |
| JP7203249B2 (en) * | 2019-12-13 | 2023-01-12 | 三菱電機株式会社 | power converter |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN105656323B (en) | 2019-02-05 |
| DE102015223002A1 (en) | 2016-06-02 |
| JP6457800B2 (en) | 2019-01-23 |
| GB2533212A (en) | 2016-06-15 |
| GB2533212B (en) | 2016-12-14 |
| JP2016103897A (en) | 2016-06-02 |
| GB201519871D0 (en) | 2015-12-23 |
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