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CN105637660A - Laminated article and method for manufacturing light-emitting device using same - Google Patents

Laminated article and method for manufacturing light-emitting device using same Download PDF

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Publication number
CN105637660A
CN105637660A CN201480056890.6A CN201480056890A CN105637660A CN 105637660 A CN105637660 A CN 105637660A CN 201480056890 A CN201480056890 A CN 201480056890A CN 105637660 A CN105637660 A CN 105637660A
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Prior art keywords
led chip
light
phosphor sheet
phosphor
emitting device
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CN105637660B (en
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川本一成
山本哲也
大关岳成
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Toray Industries Inc
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Toray Industries Inc
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/40Layered products comprising a layer of synthetic resin comprising polyurethanes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/50Properties of the layers or laminate having particular mechanical properties
    • B32B2307/54Yield strength; Tensile strength
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/062Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors

Landscapes

  • Led Device Packages (AREA)
  • Laminated Bodies (AREA)
  • Luminescent Compositions (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

本发明的目的在于提供一种能够在LED芯片的上表面及侧面追随性良好地且以均匀膜厚形成荧光体片材的层叠体。另外,本发明的目的在于提供一种发光装置的制造方法,所述制造方法中使用所述层叠体,利用生产率高的方法将LED芯片的上表面及侧面用荧光体片材进行被覆。所述层叠体包含支承基材和荧光体片材,所述荧光体片材含有荧光体及树脂,其中,利用拉伸试验求出的所述支承基材的23℃时的断裂伸长率为200%以上,且所述支承基材的23℃时的杨氏模量为600MPa以下。

An object of the present invention is to provide a laminate in which a phosphor sheet can be formed with a uniform thickness on the upper surface and side surfaces of an LED chip with good followability. Another object of the present invention is to provide a method of manufacturing a light-emitting device in which the upper surface and side surfaces of an LED chip are coated with a phosphor sheet by a method with high productivity using the laminate. The laminate includes a support substrate and a phosphor sheet, the phosphor sheet contains a phosphor and a resin, wherein the elongation at break at 23° C. of the support substrate obtained by a tensile test is 200% or more, and the Young's modulus at 23° C. of the support substrate is 600 MPa or less.

Description

层叠体及使用所述层叠体的发光装置的制造方法Laminated body and method of manufacturing light-emitting device using same

技术领域technical field

本发明涉及一种包含含有荧光体及树脂的荧光体片材的层叠体。更详细而言,涉及一种包含用于将来自LED芯片的上表面及侧面的发光波长进行转换的荧光体片材的层叠体。The present invention relates to a laminate including a phosphor sheet containing a phosphor and a resin. More specifically, it relates to a laminate including a phosphor sheet for converting the wavelength of light emitted from the upper surface and side surfaces of an LED chip.

背景技术Background technique

就发光二极管(LED,LightEmittingDiode)而言,在其发光效率显著提高的背景下,以低电力消耗、高寿命、外观设计性等为特长,不仅在液晶显示器(LCD)的背光源领域、车辆的头灯等车载领域,而且在普通照明领域,其市场也正在急剧扩大。As far as light-emitting diodes (LEDs, Light Emitting Diodes) are concerned, in the context of their significantly improved luminous efficiency, they are characterized by low power consumption, long life, and design. The automotive field such as headlights, and in the field of general lighting, its market is also rapidly expanding.

LED根据其安装模式,分为横向(lateral)型、垂直型及倒装芯片型,由于倒装芯片型LED能够提高亮度且放热性优异,所以倒装芯片型LED受到关注。然而,对于倒装芯片型LED而言,在利用现有的分配(dispense)方式进行的封装中,存在下述问题:无法在芯片的上表面与侧面之间使荧光体层的厚度一致,产生发光色的方位不均。LEDs are classified into a lateral type, a vertical type, and a flip-chip type according to their mounting mode. Flip-chip type LEDs are attracting attention because they can increase brightness and have excellent heat dissipation. However, for flip-chip LEDs, there is a problem that the thickness of the phosphor layer cannot be made uniform between the upper surface and the side surface of the chip in the packaging performed by the conventional dispensing method, resulting in The orientation of the luminous color is uneven.

针对该课题,提出了将含有荧光体的片材即荧光体片材追随性良好且均匀地粘贴在芯片周围的技术(例如,参见专利文献1~2)。专利文献1是使用形成有比LED芯片大一圈的凹部的加压部件将荧光体片材粘贴在LED芯片的侧面的方法。另外,专利文献2是下述方法:将包含支承基材和荧光体片材的层叠体载于LED芯片上,进行在真空状态下利用隔膜(diaphragm)对其进行加压的第一阶段的粘贴工序,之后除去支承基材,进一步经过基于非接触加压的第二阶段的粘贴工序,从而将荧光体片材粘贴于LED芯片侧面。In order to solve this problem, techniques have been proposed in which a phosphor sheet, which is a phosphor-containing sheet, is adhered uniformly around the chip with good followability (see, for example, Patent Documents 1 and 2). Patent Document 1 is a method of affixing a phosphor sheet to the side surface of the LED chip using a pressing member formed with a concave portion slightly larger than the LED chip. In addition, Patent Document 2 is a method of placing a laminate including a support base and a phosphor sheet on an LED chip, and performing a first-stage pasting in which a diaphragm (diaphragm) is used to pressurize the laminate in a vacuum state. After that, the supporting substrate is removed, and the phosphor sheet is bonded to the side surface of the LED chip through a second-stage bonding process by non-contact pressure.

专利文献1:日本特开2011-138831号公报Patent Document 1: Japanese Patent Laid-Open No. 2011-138831

专利文献2:国际公开第2012/023119号Patent Document 2: International Publication No. 2012/023119

发明内容Contents of the invention

然而,对于专利文献1的方法,由于每次改变LED的种类时必须重新制作作为加压部件的模具,所以经济性差。另外,由于使加压部件与荧光体片材接触并进行按压,所以存在发生片材的损伤、加压部件的污染,生产率差等问题。However, the method of Patent Document 1 is economical because it is necessary to newly manufacture a mold as a pressurizing member every time the type of LED is changed. In addition, since the pressing member is brought into contact with the phosphor sheet and pressed, there are problems such as damage to the sheet, contamination of the pressing member, and poor productivity.

另外,对于专利文献2的方法,仅利用第一阶段的隔膜加压工序时,因支承基材的柔软性不足而导致荧光体片材无法追随芯片侧面,因此,在恢复为大气压并除去支承基材后进行第二阶段的非接触加压工序,从生产率的观点考虑存在问题。In addition, in the method of Patent Document 2, when only the diaphragm pressurization step of the first stage is used, the phosphor sheet cannot follow the side surface of the chip due to insufficient flexibility of the support base material. Therefore, after returning to atmospheric pressure and removing the support base The non-contact pressurization process of the second stage is performed after the material, which is problematic from the viewpoint of productivity.

本发明的目的在于提供一种能够在LED芯片的上表面及侧面上追随性良好地且以均匀的膜厚形成荧光体片材的层叠体。另外,提供一种发光装置的制造方法,所述制造方法中使用所述层叠体,利用生产率高的方法将LED芯片的上表面及侧面用荧光体片材进行被覆。An object of the present invention is to provide a laminate in which a phosphor sheet can be formed with a uniform film thickness with good followability on the upper surface and side surfaces of the LED chip. In addition, there is provided a method of manufacturing a light-emitting device in which the upper surface and side surfaces of an LED chip are covered with a phosphor sheet by a method with high productivity using the laminate.

本发明如下所述。The present invention is as follows.

[1]一种层叠体,其包含支承基材和荧光体片材,所述荧光体片材含有荧光体及树脂,其中,利用拉伸试验求出的所述支承基材的23℃时的断裂伸长率为200%以上,且所述支承基材的23℃时的杨氏模量为600MPa以下。[1] A laminate comprising a support substrate and a phosphor sheet containing a phosphor and a resin, wherein the temperature of the support substrate at 23°C obtained by a tensile test is: The elongation at break is 200% or more, and the Young's modulus at 23° C. of the support substrate is 600 MPa or less.

[2]如[1]所述的层叠体,其中,所述支承基材的23℃时的杨氏模量为400MPa以下。[2] The laminate according to [1], wherein the Young's modulus at 23° C. of the support base is 400 MPa or less.

[3]如[1]所述的层叠体,其中,所述支承基材的23℃时的杨氏模量为100MPa以下。[3] The laminate according to [1], wherein the Young's modulus at 23° C. of the support base is 100 MPa or less.

[4]如[1]至[3]中任一项所述的层叠体,其中,所述支承基材为聚氯乙烯或聚氨酯。[4] The laminate according to any one of [1] to [3], wherein the supporting substrate is polyvinyl chloride or polyurethane.

[5]一种发光装置的制造方法,其包括下述工序(被覆工序):将接合于基板上的LED芯片的发光面用[1]至[4]中任一项所述的层叠体的荧光体片材进行被覆。[5] A method of manufacturing a light-emitting device, comprising the step (coating step) of covering the light-emitting surface of an LED chip bonded to a substrate with the laminate described in any one of [1] to [4]. The phosphor sheet is coated.

[6]一种发光装置的制造方法,其包括下述工序(被覆工序):将接合于基板上的LED芯片的上表面及侧面用[1]至[4]中任一项所述的层叠体的荧光体片材进行被覆。[6] A method of manufacturing a light-emitting device, comprising the step (coating step) of laminating the upper surface and side surfaces of an LED chip bonded to a substrate with the method described in any one of [1] to [4]. The bulk phosphor sheet is coated.

[7]如[5]或[6]所述的发光装置的制造方法,其中,所述LED芯片与所述荧光体片材在LED芯片的上表面接触的部分中的从LED芯片上表面到荧光体片材外表面的距离a[μm]和所述LED芯片与所述荧光体片材在LED芯片的侧面接触的部分中的从LED芯片侧面到荧光体片材外表面的距离b[μm]满足1.00<a/b<1.20的关系。[7] The method of manufacturing a light-emitting device according to [5] or [6], wherein the LED chip and the phosphor sheet are in contact with the upper surface of the LED chip from the upper surface of the LED chip to the upper surface of the LED chip. The distance a [μm] from the outer surface of the phosphor sheet and the distance b [μm] from the side surface of the LED chip to the outer surface of the phosphor sheet in the portion where the LED chip and the phosphor sheet are in contact with the side surface of the LED chip ] satisfies the relationship of 1.00<a/b<1.20.

[8]如[5]或[6]所述的发光装置的制造方法,其中,在用[1]至[4]中任一项所述的层叠体的荧光体片材进行被覆的工序(所述被覆工序)中,所述LED芯片与所述荧光体片材在LED芯片的上表面接触的部分中的从LED芯片上表面到荧光体片材外表面的距离a[μm]和所述LED芯片与所述荧光体片材在LED芯片的侧面接触的部分中的从LED芯片侧面到荧光体片材外表面的距离b[μm]满足1.00<a/b<1.20的关系。[8] The method for producing a light-emitting device according to [5] or [6], wherein in the step of coating with the phosphor sheet of the laminate described in any one of [1] to [4] ( In the covering step), the distance a [μm] from the upper surface of the LED chip to the outer surface of the phosphor sheet in the portion where the LED chip and the phosphor sheet are in contact with the upper surface of the LED chip and the The distance b [μm] from the side surface of the LED chip to the outer surface of the phosphor sheet in the portion where the LED chip and the phosphor sheet are in contact with the side surface of the LED chip satisfies the relationship of 1.00<a/b<1.20.

发明的效果The effect of the invention

根据本发明,能够将荧光体片材追随性良好地粘贴在LED芯片上部发光面及侧部发光面。并且由此可提供一种不存在发光色方位不均的问题的发光装置。According to the present invention, the phosphor sheet can be adhered to the upper light emitting surface and the side light emitting surface of the LED chip with good followability. And thus, it is possible to provide a light-emitting device that does not have the problem of unevenness in the direction of the light-emitting color.

附图说明Description of drawings

图1是本发明的层叠体的示意图。Fig. 1 is a schematic diagram of a laminate of the present invention.

图2是具有粘合剂的本发明的层叠体的示意图。Fig. 2 is a schematic diagram of a laminate of the present invention with an adhesive.

图3是使用了本发明的层叠体的发光装置的制造方法的一个例子。Fig. 3 is an example of a method of manufacturing a light-emitting device using the laminate of the present invention.

图4是用荧光体片材进行被覆后的发光装置的截面示意图及上表面图。4 is a schematic cross-sectional view and a top view of a light-emitting device covered with a phosphor sheet.

具体实施方式detailed description

图1中示出了本发明的层叠体。本发明的层叠体1包含支承基材2和含有荧光体及树脂的荧光体片材3,在23℃下,所述支承基材的拉伸试验中的断裂伸长率为200%以上,且杨氏模量为600MPa以下。The laminated body of this invention is shown in FIG. 1. The laminated body 1 of the present invention includes a supporting base material 2 and a fluorescent material sheet 3 containing a fluorescent material and a resin, and the supporting base material has an elongation at break of 200% or more in a tensile test at 23° C., and Young's modulus is 600 MPa or less.

即,本发明的层叠体是包含支承基材和荧光体片材的层叠体,所述荧光体片材含有荧光体及树脂,其中,利用拉伸试验求出的所述支承基材的23℃时的断裂伸长率为200%以上,且所述支承基材的23℃时的杨氏模量为600MPa以下。That is, the laminate of the present invention is a laminate comprising a support substrate and a phosphor sheet containing a phosphor and a resin, wherein the temperature of the support substrate at 23° C. obtained by a tensile test is The elongation at break at 200% or more, and the Young's modulus at 23° C. of the support substrate is 600 MPa or less.

<荧光体片材><Phosphor sheet>

荧光体片材只要主要含有树脂和荧光体即可,没有特别限定,可使用各种荧光体片材。也可根据需要包含其他成分。The phosphor sheet is not particularly limited as long as it mainly contains resin and phosphor, and various phosphor sheets can be used. Other ingredients may also be included as needed.

(荧光体片材的物性)(Physical properties of phosphor sheet)

对于荧光体片材,从保管性、搬运性及加工性的观点考虑,优选在室温附近弹性高。另一方面,从以追随LED芯片的方式进行变形且使其粘接的观点考虑,优选在一定的条件下弹性变低,显示出柔软性及粘接性(粘合性)。根据上述观点,优选的是,本荧光体片材通过60℃以上的加热而发生柔软化、显示出粘接性。The phosphor sheet preferably has high elasticity around room temperature from the viewpoint of storage properties, transport properties, and processability. On the other hand, from the viewpoint of deforming so as to follow the LED chip and bonding, it is preferable that the elasticity is lowered under certain conditions, and flexibility and adhesiveness (adhesiveness) are exhibited. From the above viewpoint, it is preferable that the present phosphor sheet is softened by heating at 60° C. or higher to exhibit adhesiveness.

上述荧光体片材的储能模量优选在25℃时为0.1MPa以上,在100℃时小于0.1MPa,更优选在25℃时为0.5MPa以上,在100℃时小于0.05MPa。The storage modulus of the phosphor sheet is preferably 0.1 MPa or more at 25°C and less than 0.1 MPa at 100°C, more preferably 0.5 MPa or more at 25°C and less than 0.05 MPa at 100°C.

此处所述的储能模量,是进行动态粘弹性测定时的储能模量。动态粘弹性是指,在对材料以某正弦频率施加剪切应变(shearstrain)时,将达到稳定状态时表现出的剪切应力分解为相位与应变一致的成分(弹性的成分)、和相位与应变相差90°的成分(粘性的成分),从而对材料的动态力学特性进行分析的方法。此处,相位与剪切应变一致的应力成分除以剪切应变而得到的值为储能模量G’,由于其表示材料相对于各温度下的动态应变的变形、追随,所以与材料的加工性、粘接性密切相关。The storage modulus mentioned here is the storage modulus at the time of dynamic viscoelasticity measurement. Dynamic viscoelasticity means that when a shear strain (shearstrain) is applied to a material at a certain sinusoidal frequency, the shear stress exhibited when it reaches a steady state is decomposed into a component (elastic component) whose phase is consistent with the strain, and a component whose phase is consistent with the strain. It is a method of analyzing the dynamic mechanical properties of materials by using components with a strain difference of 90° (viscous components). Here, the value obtained by dividing the stress component whose phase coincides with the shear strain by the shear strain is the storage modulus G'. Since it represents the deformation and follow-up of the material with respect to the dynamic strain at each temperature, it is related to the material's Processability and adhesiveness are closely related.

在本发明中的荧光体片材的情况下,通过具有25℃时0.1MPa以上的储能模量,即使对于室温(25℃)时的利用刃具进行的切断加工等快的剪切应力,也可将片材以周围无变形的方式切断,因此,可得到高尺寸精度下的加工性。室温时的储能模量的上限满足本发明的目的即可,没有特别限制,但考虑到降低与LED元件粘贴后的应力应变的必要性时,优选为1GPa以下。另外,通过使100℃时的储能模量小于0.1MPa,从而进行60℃~150℃时的加热粘贴时,荧光体片材快速地变形并追随LED芯片表面的形状,可获得高粘接力。如果是可于100℃得到小于0.1MPa的储能模量的荧光体片材,则储能模量随着从室温开始升高温度而降低,即使小于100℃,粘贴性也随着温度上升变得良好,但为了得到实用的粘接性,优选为60℃以上。另外,以高于100℃的温度加热上述荧光体片材时,会导致储能模量的降低进一步进行,粘贴性变得良好,但在高于150℃的温度时,应力缓和不足,同时树脂的固化快速进行,易于产生裂纹、剥离。因此,合适的加热粘贴温度为60℃~150℃,进一步优选为60℃~120℃。100℃时的储能模量的下限满足本发明的目的即可,没有特别限制,但如果在进行向LED元件上的加热粘贴时流动性过高,则在粘贴前无法保持通过切断、开孔进行加工而得到的形状,故优选为0.001MPa以上。In the case of the phosphor sheet in the present invention, by having a storage modulus of 0.1 MPa or more at 25° C., even against rapid shear stress such as cutting with a cutting tool at room temperature (25° C.), The sheet can be cut without deformation around it, so processability with high dimensional accuracy can be obtained. The upper limit of the storage modulus at room temperature is not particularly limited as long as it satisfies the object of the present invention, but it is preferably 1 GPa or less in consideration of the need to reduce stress and strain after bonding with LED elements. In addition, by reducing the storage modulus at 100°C to less than 0.1 MPa, the phosphor sheet deforms rapidly and follows the shape of the surface of the LED chip when heat-attached at 60°C to 150°C, thereby obtaining high adhesive force. . If it is a phosphor sheet that can obtain a storage modulus of less than 0.1MPa at 100°C, the storage modulus will decrease as the temperature rises from room temperature, and even if it is less than 100°C, the adhesiveness will change as the temperature rises. However, in order to obtain practical adhesiveness, it is preferably 60° C. or higher. In addition, when the above-mentioned fluorescent substance sheet is heated at a temperature higher than 100°C, the decrease in the storage modulus progresses and the adhesiveness becomes better, but at a temperature higher than 150°C, the stress relaxation is insufficient, and the resin The curing is fast, and it is easy to crack and peel off. Therefore, a suitable temperature for heating and pasting is 60°C to 150°C, more preferably 60°C to 120°C. The lower limit of the storage modulus at 100°C is not particularly limited as long as it satisfies the purpose of the present invention. However, if the fluidity is too high when heat-attached to the LED element, it will not be possible to keep passing through cutting and opening before attaching. The shape obtained by processing is preferably 0.001 MPa or more.

作为荧光体片材,只要能够得到上述储能模量,其中所含的树脂可以为未固化或半固化状态的树脂,但考虑到如下所述的片材的操作性·保存性等时,所含的树脂优选为固化后的树脂。树脂为未固化、或半固化状态时,有可能在荧光体片材的保存中在室温时发生固化反应,储能模量不在适当的范围内。为了防止上述情况,理想的是,树脂固化完成,或者于室温保存1个月左右的长时间,使固化进行至储能模量不发生变化的程度。As the phosphor sheet, as long as the above-mentioned storage modulus can be obtained, the resin contained therein may be an uncured or semi-cured resin, but when considering the handling and storage properties of the sheet as described below, the The resin contained is preferably a cured resin. When the resin is in an uncured or semi-cured state, a curing reaction may occur at room temperature during storage of the phosphor sheet, and the storage modulus may not be within an appropriate range. In order to prevent the above, it is desirable that the resin is cured, or stored at room temperature for a long time of about 1 month, so that the curing proceeds to such an extent that the storage modulus does not change.

(树脂)(resin)

本发明的荧光体片材所含的树脂只要是能使荧光体均匀地分散于内部、能形成片材的树脂即可,可以使用任意树脂。Any resin may be used as long as the resin contained in the phosphor sheet of the present invention can uniformly disperse the phosphor inside and form a sheet.

具体而言,可举出有机硅树脂、环氧树脂、聚芳酯树脂(polyarylateresin)、PET改性聚芳酯树脂、聚碳酸酯树脂、环状烯烃、聚对苯二甲酸乙二醇酯树脂、聚甲基丙烯酸甲酯树脂、聚丙烯树脂、改性丙烯酸树脂、聚苯乙烯树脂及丙烯腈·苯乙烯共聚物树脂等。此处,PET是聚对苯二甲酸乙二醇酯。本发明中,从透明性方面考虑,优选使用有机硅树脂、环氧树脂。进一步地,从耐热性方面考虑,特别优选使用有机硅树脂。Specifically, silicone resin, epoxy resin, polyarylate resin (polyarylate resin), PET modified polyarylate resin, polycarbonate resin, cyclic olefin, polyethylene terephthalate resin , Polymethyl methacrylate resin, polypropylene resin, modified acrylic resin, polystyrene resin and acrylonitrile-styrene copolymer resin, etc. Here, PET is polyethylene terephthalate. In the present invention, silicone resins and epoxy resins are preferably used from the viewpoint of transparency. Furthermore, it is particularly preferable to use a silicone resin from the viewpoint of heat resistance.

作为本发明中使用的有机硅树脂,优选固化型有机硅橡胶。可以使用一液型、二液型(三液型)中的任意种构成。固化型有机硅橡胶中,作为通过空气中的水分或催化剂而引起缩合反应的类型,有脱醇型、脱肟型、脱乙酸型、脱羟胺型等。另外,作为通过催化剂而引起氢化硅烷化反应的类型,有加成反应型。可以使用上述中任意类型的固化型有机硅橡胶。尤其是从不产生伴随固化反应的副产物、固化收缩小的方面、容易通过加热来加快固化方面考虑,更优选加成反应型的有机硅橡胶。As the silicone resin used in the present invention, curable silicone rubber is preferable. Either one-component type or two-component type (three-component type) can be used. Among curable silicone rubbers, there are dealcoholized type, deoximated type, deacetic acid type, and dehydroxylamine type, etc., as the type in which the condensation reaction is caused by moisture in the air or a catalyst. In addition, there is an addition reaction type as a type in which a hydrosilylation reaction is induced by a catalyst. Any of the types of curable silicone rubbers described above may be used. In particular, an addition reaction type silicone rubber is more preferable because it does not generate by-products accompanying the curing reaction, has little cure shrinkage, and is easy to accelerate curing by heating.

对于加成反应型的有机硅橡胶,作为一个例子,可以通过使含有与硅原子键合的链烯基的化合物、与具有与硅原子键合的氢原子的化合物进行氢化硅烷化反应而形成。作为这样的材料,可举出通过使乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、烯丙基三甲氧基硅烷、丙烯基三甲氧基硅烷、降冰片烯基三甲氧基硅烷、辛烯基三甲氧基硅烷等含有与硅原子键合的链烯基的化合物、与聚甲基氢硅氧烷(methylhydrogenpolysiloxane)、聚二甲基硅氧烷-CO-聚甲基氢硅氧烷、聚乙基氢硅氧烷、聚甲基氢硅氧烷-CO-聚甲基苯基硅氧烷等具有与硅原子键合的氢原子的化合物进行氢化硅烷化反应而形成的材料。另外,除上述材料以外,还可以利用例如日本特开2010-159411号公报所记载那样的已知物质。The addition reaction type silicone rubber can be formed, for example, by subjecting a compound containing an alkenyl group bonded to a silicon atom to a compound having a hydrogen atom bonded to a silicon atom to undergo a hydrosilylation reaction. Examples of such materials include vinyltrimethoxysilane, vinyltriethoxysilane, allyltrimethoxysilane, propenyltrimethoxysilane, norbornenyltrimethoxysilane, octane Compounds containing alkenyl groups bonded to silicon atoms, such as alkenyltrimethoxysilane, and polymethylhydrogenpolysiloxane, polydimethylsiloxane-CO-polymethylhydrogensiloxane, A material obtained by hydrosilylation of a compound having a hydrogen atom bonded to a silicon atom, such as polyethylhydrogensiloxane and polymethylhydrogensiloxane-CO-polymethylphenylsiloxane. In addition, other than the above-mentioned materials, for example, known substances described in JP 2010-159411 A can also be used.

通过将这些树脂进行适当设计,从而控制室温(25℃)时的储能模量和高温(100℃)时的储能模量,可获得对本发明的实施而言有用的树脂。By appropriately designing these resins so as to control the storage modulus at room temperature (25° C.) and the storage modulus at high temperature (100° C.), resins useful for the practice of the present invention can be obtained.

另外,作为市售的物质,也可以从通常的LED用途的有机硅密封材料中选择具有合适的储能模量的材料并使用。作为具体例,有东丽·道康宁公司制的OE-6630A/B、OE-6520A/B等。In addition, as a commercially available material, a material having an appropriate storage modulus may be selected from common silicone sealing materials for LEDs and used. Specific examples include OE-6630A/B and OE-6520A/B manufactured by Toray Dow Corning Corporation.

(荧光体)(phosphor)

荧光体吸收从LED芯片发出的蓝色光、紫色光、紫外光,将波长进行转换,发出与LED芯片的光为不同波长的红色、橙色、黄色、绿色、蓝色区域的波长的光。由此,一部分从LED芯片发出的光、和一部分从荧光体发出的光混合,得到包含白色的多色系的LED。具体而言,通过光学地组合蓝色系的LED和荧光体(其通过来自LED的光而发出黄色系的发光颜色),能够使用单一的LED芯片发出白色系的光。The phosphor absorbs blue light, violet light, and ultraviolet light emitted from the LED chip, converts the wavelength, and emits light of red, orange, yellow, green, and blue wavelengths different from the light of the LED chip. As a result, part of the light emitted from the LED chip and part of the light emitted from the phosphor are mixed to obtain a multi-color LED including white. Specifically, a single LED chip can emit white light by optically combining a blue LED and a phosphor (which emits a yellow light emission color by light from the LED).

上述那样的荧光体中,有发出绿色光的荧光体、发出蓝色光的荧光体、发出黄色光的荧光体、发出红色光的荧光体等多种荧光体。作为用于本发明的具体的荧光体,可举出有机荧光体、无机荧光体、荧光颜料、荧光染料等已知的荧光体。作为有机荧光体,可举出烯丙基磺酰胺(allylsulfoamide)·三聚氰胺甲醛共缩合染色物、苝类荧光体等。从可长期使用方面考虑,优选使用苝类荧光体。作为特别适合用于本发明的荧光物质,可举出无机荧光体。以下说明用于本发明的无机荧光体。Among the above-mentioned phosphors, there are various types of phosphors such as phosphors emitting green light, phosphors emitting blue light, phosphors emitting yellow light, and phosphors emitting red light. Specific examples of phosphors used in the present invention include known phosphors such as organic phosphors, inorganic phosphors, fluorescent pigments, and fluorescent dyes. Examples of organic phosphors include allylsulfoamide-melamine-formaldehyde co-condensation dyes, perylene-based phosphors, and the like. From the viewpoint of long-term use, it is preferable to use a perylene-based phosphor. An inorganic fluorescent substance is mentioned as a fluorescent substance suitable especially for this invention. The inorganic phosphor used in the present invention will be described below.

作为发出绿色光的荧光体,例如有SrAl2O4:Eu、Y2SiO5:Ce,Tb、MgAl11O19:Ce,Tb、Sr7Al12O25:Eu、(Mg、Ca、Sr、Ba中的至少1种以上)Ga2S4:Eu等。Examples of phosphors that emit green light include SrAl 2 O 4 : Eu, Y 2 SiO 5 : Ce, Tb, MgAl 11 O 19 : Ce, Tb, Sr 7 Al 12 O 25 : Eu, (Mg, Ca, Sr , Ba at least one or more) Ga 2 S 4 : Eu and the like.

作为发出蓝色光的荧光体,例如有Sr5(PO4)3Cl:Eu、(SrCaBa)5(PO4)3Cl:Eu、(BaCa)5(PO4)3Cl:Eu、(Mg、Ca、Sr、Ba中的至少一种以上)2B5O9Cl:Eu,Mn、(Mg、Ca、Sr、Ba中的至少一种以上)(PO4)6Cl2:Eu,Mn等。Examples of phosphors that emit blue light include Sr 5 (PO 4 ) 3 Cl:Eu, (SrCaBa) 5 (PO 4 ) 3 Cl:Eu, (BaCa) 5 (PO 4 ) 3 Cl:Eu, (Mg, At least one of Ca, Sr, Ba) 2 B 5 O 9 Cl: Eu, Mn, (at least one of Mg, Ca, Sr, Ba) (PO 4 ) 6 Cl 2 : Eu, Mn, etc. .

作为发出绿色至黄色光的荧光体,有至少用铈活化过的钇·铝氧化物荧光体、至少用铈活化过的钇·钆·铝氧化物荧光体、至少用铈活化过的钇·铝·石榴石氧化物荧光体、及至少用铈活化过的钇·镓·铝氧化物荧光体等(所谓YAG类荧光体)。具体而言,可使用Ln3M5O12:R(Ln为选自Y、Gd、La中的至少1种以上。M包含Al、Ca的至少任一者。R为镧系。)、(Y1-xGax)3(Al1-yGay)5O12:R(R为选自Ce、Tb、Pr、Sm、Eu、Dy、Ho中的至少1种以上。0<Rx<0.5、0<y<0.5。)。As phosphors emitting green to yellow light, there are yttrium-aluminum oxide phosphors activated with at least cerium, yttrium-gadolinium-aluminum oxide phosphors activated with at least cerium, and yttrium-aluminum oxides activated with at least cerium. Garnet oxide phosphors, yttrium-gallium-aluminum oxide phosphors activated with at least cerium (so-called YAG-based phosphors). Specifically, Ln 3 M 5 O 12 : R (Ln is at least one selected from Y, Gd, and La. M includes at least one of Al and Ca. R is a lanthanide.), ( Y 1-x Ga x ) 3 (Al 1-y Ga y ) 5 O 12 : R (R is at least one selected from Ce, Tb, Pr, Sm, Eu, Dy, Ho. 0<Rx< 0.5, 0<y<0.5.).

作为发出红色光的荧光体,例如有Y2O2S:Eu、La2O2S:Eu、Y2O3:Eu、Gd2O2S:Eu等。Examples of phosphors that emit red light include Y 2 O 2 S:Eu, La 2 O 2 S:Eu, Y 2 O 3 :Eu, Gd 2 O 2 S:Eu, and the like.

另外,作为对应于目前主流的蓝色LED进行发光的荧光体,可举出Y3(Al,Ga)5O12:Ce,(Y,Gd)3Al5O12:Ce,Lu3Al5O12:Ce,Y3Al5O12:Ce等YAG类荧光体、Tb3Al5O12:Ce等TAG类荧光体、(Ba,Sr)2SiO4:Eu类荧光体或Ca3Sc2Si3O12:Ce类荧光体、(Sr,Ba,Mg)2SiO4:Eu等硅酸盐类荧光体、(Ca,Sr)2Si5N8:Eu、(Ca,Sr)AlSiN3:Eu、CaSiAlN3:Eu等氮化物类荧光体、Cax(Si,Al)12(O,N)16:Eu等氮氧化物类荧光体,进而可举出(Ba,Sr,Ca)Si2O2N2:Eu类荧光体、Ca8MgSi4O16Cl2:Eu类荧光体、SrAl2O4:Eu,Sr4Al14O25:Eu等荧光体。In addition, examples of phosphors that emit light corresponding to currently mainstream blue LEDs include Y 3 (Al, Ga) 5 O 12 : Ce, (Y, Gd) 3 Al 5 O 12 : Ce, Lu 3 Al 5 O 12 : Ce, Y 3 Al 5 O 12 : YAG-based phosphors such as Ce, Tb 3 Al 5 O 12 : TAG-based phosphors such as Ce, (Ba, Sr) 2 SiO 4 : Eu-based phosphors or Ca 3 Sc 2 Si 3 O 12 : Ce-based phosphor, (Sr, Ba, Mg) 2 SiO 4 : Silicate-based phosphor such as Eu, (Ca, Sr) 2 Si 5 N 8 : Eu, (Ca, Sr)AlSiN 3 : Eu, CaSiAlN 3 : Nitride-based phosphors such as Eu, Cax(Si, Al) 12 (O, N) 16 : Nitride-based phosphors such as Eu, and further, (Ba, Sr, Ca)Si 2 O 2 N 2 : Eu-based phosphor, Ca 8 MgSi 4 O 16 Cl 2 : Eu-based phosphor, SrAl 2 O 4 : Eu, Sr 4 Al 14 O 25 : Eu phosphor.

其中,从发光效率、亮度等方面考虑,优选使用YAG类荧光体、TAG类荧光体、硅酸盐类荧光体。Among them, YAG-based phosphors, TAG-based phosphors, and silicate-based phosphors are preferably used from the viewpoint of luminous efficiency, brightness, and the like.

除了以上说明的之外,可以根据用途、目标发光颜色使用已知的荧光体。In addition to those described above, known phosphors can be used depending on applications and target emission colors.

对荧光体的粒子尺寸没有特别限制,但优选D50为0.05μm以上,更优选为3μm以上。另外,优选D50为30μm以下。此处,所谓D50,是指在利用激光衍射散射式粒度分布测定法进行测定而得到的体积基准粒度分布中,自小粒径侧起的累计通过率(cumulativepercentpassing)为50%时的粒径。D50为上述范围时,荧光体片材中的荧光体的分散性良好,可得到稳定的发光。The particle size of the phosphor is not particularly limited, but D50 is preferably 0.05 μm or more, more preferably 3 μm or more. In addition, D50 is preferably 30 μm or less. Here, D50 refers to the particle diameter at which the cumulative percent passing from the small particle diameter side is 50% in the volume-based particle size distribution measured by the laser diffraction scattering particle size distribution measurement method. When D50 is in the above-mentioned range, the dispersibility of the phosphor in the phosphor sheet is favorable, and stable light emission can be obtained.

在本发明中,对于荧光体的含量没有特别限制,但从提高来自LED芯片的发光的波长转换效率的观点考虑,优选为荧光体片材整体的30重量%以上,更优选为40重量%以上。对荧光体含量的上限没有特别规定,但从易于形成操作性优异的荧光体片材这样的观点考虑,优选为荧光体片材总体的95重量%以下,更优选为90重量%以下,进一步优选为85重量%以下,特别优选为80重量%以下。In the present invention, the content of the phosphor is not particularly limited, but from the viewpoint of improving the wavelength conversion efficiency of light emitted from the LED chip, it is preferably at least 30% by weight of the entire phosphor sheet, and more preferably at least 40% by weight. . The upper limit of the phosphor content is not particularly specified, but it is preferably 95% by weight or less of the phosphor sheet as a whole, more preferably 90% by weight or less, and even more preferably It is 85% by weight or less, particularly preferably 80% by weight or less.

本发明的荧光体片材特别优选用于LED芯片的表面被覆用途。此时,通过使荧光体片材中的荧光体的含量在上述范围,可得到显示优异的性能的LED发光装置。The phosphor sheet of the present invention is particularly preferably used for surface coating of LED chips. In this case, by setting the content of the phosphor in the phosphor sheet within the above-mentioned range, an LED light-emitting device exhibiting excellent performance can be obtained.

(聚硅氧烷微粒)(polysiloxane microparticles)

为了提高用于制作荧光体片材的树脂组合物的流动性、使涂布性良好,本发明的荧光体片材可含有聚硅氧烷微粒。所含有的聚硅氧烷微粒优选为由有机硅树脂和/或有机硅橡胶形成的微粒。特别优选为通过以下方法而得的聚硅氧烷微粒:将有机三烷氧基硅烷或有机二烷氧基硅烷、有机三乙酰氧基硅烷、有机二乙酰氧基硅烷、有机三肟硅烷、有机二肟硅烷等有机硅烷水解,接着进行缩合。The phosphor sheet of the present invention may contain polysiloxane fine particles in order to improve the fluidity of the resin composition used for producing the phosphor sheet and to improve applicability. The polysiloxane microparticles contained are preferably microparticles made of silicone resin and/or silicone rubber. Particular preference is given to polysiloxane microparticles obtained by combining organotrialkoxysilanes or organodialkoxysilanes, organotriacetoxysilanes, organodiacetoxysilanes, organotrioxime silanes, organic Organosilanes such as dioximesilane are hydrolyzed followed by condensation.

作为有机三烷氧基硅烷,可举出甲基三甲氧基硅烷、甲基三乙氧基硅烷、甲基三正丙氧基硅烷、甲基三异丙氧基硅烷、甲基三正丁氧基硅烷、甲基三异丁氧基硅烷、甲基三仲丁氧基硅烷、甲基三叔丁氧基硅烷、乙基三甲氧基硅烷、正丙基三甲氧基硅烷、异丙基三甲氧基硅烷、正丁基三丁氧基硅烷、异丁基三丁氧基硅烷、仲丁基三甲氧基硅烷、叔丁基三丁氧基硅烷、N-β-(氨基乙基)-γ-氨基丙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、乙烯基三甲氧基硅烷、苯基三甲氧基硅烷等。Examples of organotrialkoxysilanes include methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltriisopropoxysilane, methyltri-n-butoxysilane methylsilane, methyltriisobutoxysilane, methyltri-sec-butoxysilane, methyltri-tert-butoxysilane, ethyltrimethoxysilane, n-propyltrimethoxysilane, isopropyltrimethoxysilane butylsilane, n-butyltributoxysilane, isobutyltributoxysilane, sec-butyltrimethoxysilane, tert-butyltributoxysilane, N-β-(aminoethyl)-γ- Aminopropyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, vinyltrimethoxysilane, phenyltrimethoxysilane and the like.

作为有机二烷氧基硅烷,可举出二甲基二甲氧基硅烷、二甲基二乙氧基硅烷、甲基乙基二甲氧基硅烷、甲基乙基二乙氧基硅烷、二乙基二乙氧基硅烷、二乙基二甲氧基硅烷、3-氨基丙基甲基二乙氧基硅烷、N-(2-氨基乙基)-3-氨基丙基甲基二甲氧基硅烷、N-(2-氨基乙基)-3-氨基异丁基甲基二甲氧基硅烷、N-乙基氨基异丁基甲基二乙氧基硅烷、(苯基氨基甲基)甲基二甲氧基硅烷、乙烯基甲基二乙氧基硅烷等。Examples of organodialkoxysilanes include dimethyldimethoxysilane, dimethyldiethoxysilane, methylethyldimethoxysilane, methylethyldiethoxysilane, Ethyldiethoxysilane, diethyldimethoxysilane, 3-aminopropylmethyldiethoxysilane, N-(2-aminoethyl)-3-aminopropylmethyldimethoxy N-(2-aminoethyl)-3-aminoisobutylmethyldimethoxysilane, N-ethylaminoisobutylmethyldiethoxysilane, (phenylaminomethyl)methyldimethylsilane Oxysilane, Vinylmethyldiethoxysilane, etc.

作为有机三乙酰氧基硅烷,可举出甲基三乙酰氧基硅烷、乙基三乙酰氧基硅烷、乙烯基三乙酰氧基硅烷等。As organotriacetoxysilane, methyltriacetoxysilane, ethyltriacetoxysilane, vinyltriacetoxysilane, etc. are mentioned.

作为有机二乙酰氧基硅烷,可举出二甲基二乙酰氧基硅烷、甲基乙基二乙酰氧基硅烷、乙烯基甲基二乙酰氧基硅烷、乙烯基乙基二乙酰氧基硅烷等。Examples of organodiacetoxysilane include dimethyldiacetoxysilane, methylethyldiacetoxysilane, vinylmethyldiacetoxysilane, vinylethyldiacetoxysilane, etc. .

作为有机三肟硅烷,可举出甲基三甲基乙基酮肟硅烷、乙烯基三甲基乙基酮肟硅烷,作为有机二肟硅烷,可举出甲基乙基二甲基乙基酮肟硅烷等。Examples of organotrixime silanes include methyltrimethylethylketoxime silane and vinyltrimethylethylketoxime silane, and examples of organodioxime silanes include methylethyldimethylethylketone oxime silane etc.

具体而言,上述粒子可通过以下方法获得:日本特开昭63-77940号公报中所报道的方法、日本特开平6-248081号公报中所报道的方法、日本特开2003-342370号公报中所报道的方法、日本特开平4-88022号公报中所报道的方法等。另外也已知如下方法:将有机三烷氧基硅烷或有机二烷氧基硅烷、有机三乙酰氧基硅烷、有机二乙酰氧基硅烷、有机三肟硅烷、有机二肟硅烷等有机硅烷及/或其部分水解物添加于碱性水溶液中,使其水解、缩合而获得粒子的方法;在水或酸性溶液中添加有机硅烷及/或其部分水解物,而获得该有机硅烷及/或其部分水解物的水解部分缩合物后,添加碱进行缩合反应而获得粒子的方法;使有机硅烷及/或其水解物为上层,使碱或碱与有机溶剂的混合液为下层,在这些层的界面使该有机硅烷及/或其水解物水解、缩聚而获得粒子的方法等,利用上述任一种方法,均可获得本发明中所用的粒子。Specifically, the above-mentioned particles can be obtained by the following methods: the method reported in Japanese Patent Laid-Open No. 63-77940, the method reported in Japanese Patent Laid-Open No. 6-248081, the method reported in Japanese Patent Laid-Open No. 2003-342370 The reported method, the method reported in Japanese Patent Application Laid-Open No. 4-88022, and the like. In addition, the following methods are known: organosilanes such as organotrialkoxysilane or organodialkoxysilane, organotriacetoxysilane, organodiacetoxysilane, organotrioximine silane, organodioxime silane and/or A method in which a particle is obtained by adding its partial hydrolyzate to an alkaline aqueous solution to hydrolyze and condense it; adding an organosilane and/or its partial hydrolyzate to water or an acidic solution to obtain the organosilane and/or its part A method in which particles are obtained by adding a base to carry out a condensation reaction after the hydrolyzate is partially hydrolyzed; the organic silane and/or its hydrolyzate is the upper layer, and the base or the mixture of the base and the organic solvent is the lower layer, and at the interface of these layers The particles used in the present invention can be obtained by any of the methods of obtaining particles by hydrolyzing and polycondensing the organosilane and/or its hydrolyzate.

其中,在使有机硅烷及/或其部分水解物水解、缩合来制造球状聚硅氧烷微粒时,优选通过在反应溶液内添加水溶性高分子、表面活性剂等高分子分散剂的方法来得到聚硅氧烷微粒。水溶性高分子只要在溶剂中作为保护胶体发挥作用即可,可使用合成高分子、天然高分子中的任意种。具体而言,可举出聚乙烯醇、聚乙烯吡咯烷酮等水溶性高分子。表面活性剂只要通过在分子中具有亲水性部位和疏水性部位而作为保护胶体发挥作用即可。具体而言,可举出十二烷基苯磺酸钠、十二烷基苯磺酸铵、月桂基硫酸钠、月桂基硫酸铵、聚氧乙烯烷基醚硫酸钠等阴离子型表面活性剂、月桂基三甲基氯化铵,硬脂基三甲基氯化铵等阳离子型表面活性剂;聚氧乙烯烷基醚、聚氧乙烯二苯乙烯化苯基醚、聚氧亚烷基链烯基醚、脱水山梨糖醇单烷基酯等醚系或酯系的非离子型表面活性剂;聚醚改性聚二甲基硅氧烷、聚酯改性聚二甲基硅氧烷、芳烷基改性聚烷基硅氧烷等聚硅氧烷系表面活性剂;及含有全氟烷基的寡聚物等氟系表面活性剂;丙烯酸系表面活性剂。作为分散剂的添加方法,可列举预先添加于反应初液中的方法、同时添加有机三烷氧基硅烷及/或其部分水解物的方法、使有机三烷氧基硅烷及/或其部分水解物水解部分缩合后进行添加的方法,也可选择这些方法中的任一种方法。分散剂的添加量相对于1重量份的反应液量优选为5×10-7~0.1重量份的范围。低于下限时,粒子彼此之间容易凝集而形成块状物。另外,高于上限时,粒子中的分散剂残留物变多,成为着色的原因。Among them, when organosilane and/or its partial hydrolyzate are hydrolyzed and condensed to produce spherical polysiloxane microparticles, it is preferably obtained by adding a polymer dispersant such as a water-soluble polymer or a surfactant to the reaction solution. Polysiloxane microparticles. As long as the water-soluble polymer functions as a protective colloid in a solvent, any of synthetic polymers and natural polymers can be used. Specifically, water-soluble polymers such as polyvinyl alcohol and polyvinylpyrrolidone are mentioned. The surfactant should just function as a protective colloid by having a hydrophilic part and a hydrophobic part in the molecule. Specifically, anionic surfactants such as sodium dodecylbenzenesulfonate, ammonium dodecylbenzenesulfonate, sodium lauryl sulfate, ammonium lauryl sulfate, sodium polyoxyethylene alkyl ether sulfate, Cationic surfactants such as lauryl trimethyl ammonium chloride and stearyl trimethyl ammonium chloride; polyoxyethylene alkyl ether, polyoxyethylene distyrenated phenyl ether, polyoxyalkylene alkenes Ether-based or ester-based nonionic surfactants such as base ethers and sorbitan monoalkyl esters; polyether-modified polydimethylsiloxane, polyester-modified polydimethylsiloxane, aromatic Polysiloxane-based surfactants such as alkyl-modified polyalkylsiloxanes; and fluorine-based surfactants such as perfluoroalkyl-containing oligomers; acrylic-based surfactants. As the method of adding the dispersant, the method of adding in advance to the initial reaction liquid, the method of adding the organotrialkoxysilane and/or its partial hydrolyzate at the same time, and the method of hydrolyzing the organotrialkoxysilane and/or its part The method of adding after the hydrolysis and partial condensation of the product can also be selected from any one of these methods. The added amount of the dispersant is preferably in the range of 5×10 −7 to 0.1 parts by weight relative to 1 part by weight of the reaction liquid. When it is less than the lower limit, the particles tend to aggregate to form lumps. Moreover, when it exceeds an upper limit, the dispersing agent residue in a particle will increase and it will become a cause of coloring.

对于上述聚硅氧烷粒子,还可以基于控制向基质成分的分散性、润湿性等目的,利用表面改性剂对粒子表面进行修饰。作为表面改性剂,可以为利用物理吸附进行修饰的物质,还可以为利用化学反应进行修饰的物质,具体而言,可举出硅烷偶联剂、硫醇偶联剂、钛酸酯偶联剂、铝酸酯偶联剂、氟系涂布剂等,从耐热性强、不阻碍固化的方面考虑,特别优选为利用硅烷偶联剂进行的修饰。The above polysiloxane particles may be modified with a surface modifying agent for the purpose of controlling dispersibility to matrix components, wettability, and the like. The surface modifying agent may be modified by physical adsorption or modified by chemical reaction, specifically, silane coupling agent, thiol coupling agent, titanate coupling agent, etc. Modification with a silane coupling agent is particularly preferable in terms of strong heat resistance and no inhibition of curing.

作为聚硅氧烷微粒所含的有机取代基,优选为甲基、苯基,可通过这些取代基的含量来调整聚硅氧烷微粒的折射率。为了不使LED发光装置的亮度降低、而欲在不使从粘合剂树脂即有机硅树脂中通过的光发生散射的情况下进行使用时,优选聚硅氧烷微粒的折射率d1、与除该聚硅氧烷微粒及荧光体以外的成分的折射率d2的折射率差小。聚硅氧烷微粒的折射率d1、与除该聚硅氧烷微粒及荧光体以外的成分的折射率d2的折射率差,优选小于0.10,更优选为0.03以下。通过将折射率控制为上述范围,能够降低聚硅氧烷微粒与有机硅组合物在界面处的反射、散射,获得高透明性、透光率,不会使LED发光装置的亮度降低。The organic substituent contained in the polysiloxane microparticles is preferably a methyl group or a phenyl group, and the refractive index of the polysiloxane microparticles can be adjusted by the content of these substituents. In order not to reduce the brightness of the LED light-emitting device and to use it without scattering the light passing through the silicone resin, which is the binder resin, it is preferable that the refractive index d1 of the polysiloxane microparticles and the diluent The refractive index difference of the refractive index d2 of the components other than the polysiloxane fine particles and the phosphor is small. The difference between the refractive index d1 of the silicone fine particles and the refractive index d2 of components other than the silicone fine particles and the phosphor is preferably less than 0.10, more preferably 0.03 or less. By controlling the refractive index to the above range, the reflection and scattering at the interface between the polysiloxane microparticles and the silicone composition can be reduced, and high transparency and light transmittance can be obtained without reducing the brightness of the LED light emitting device.

关于折射率的测定,全反射法可使用阿贝(Abbe)折射计、浦耳弗里奇(Pulfrich)折射计、液浸型折射计、液浸法、最小偏向角法等,但有机硅组合物的折射率测定中阿贝折射计有用,聚硅氧烷微粒的折射率测定中液浸法有用。Regarding the determination of the refractive index, the total reflection method can use Abbe refractometer, Pulfrich refractometer, liquid immersion refractometer, liquid immersion method, minimum deflection angle method, etc., but the silicone combination The Abbe refractometer is useful for the measurement of the refractive index of objects, and the liquid immersion method is useful for the measurement of the refractive index of polysiloxane particles.

另外,作为用于控制上述折射率差的手段,可通过改变构成聚硅氧烷微粒的原料的量比来进行调整。即,例如,通过调整作为原料的甲基三烷氧基硅烷与苯基三烷氧基硅烷的混合比,增加甲基的构成比,从而可实现接近1.4的低折射率化,反之,通过增加苯基的构成比,可实现相对高折射率化。In addition, as a means for controlling the above-mentioned difference in refractive index, it is possible to adjust by changing the molar ratio of the raw materials constituting the polysiloxane fine particles. That is, for example, by adjusting the mixing ratio of methyltrialkoxysilane and phenyltrialkoxysilane as raw materials and increasing the composition ratio of methyl groups, a low refractive index close to 1.4 can be achieved. Conversely, by increasing The composition ratio of the phenyl group enables a relatively high refractive index.

本发明中,聚硅氧烷微粒的平均粒径以中值粒径(D50)表示,该平均粒径的下限优选为0.01μm以上,更优选为0.05μm以上。另外,上限优选为2.0μm以下,进一步优选为1.0μm以下。若平均粒径为0.01μm以上,则容易制作控制了粒径的粒子,另外,通过使平均粒径为2.0μm以下,荧光体片材的光学特性变得良好。另外,通过使平均粒径为0.01μm以上、2.0μm以下,可充分获得荧光体片材制造用树脂液的流动性提高效果。另外,优选使用单分散且圆球状的粒子。本发明中,荧光体片材所含的聚硅氧烷微粒的平均粒径即中值粒径(D50)及粒度分布,可通过片材剖面的SEM(扫描式电子显微镜)观察进行测定。对利用SEM得到的测定图像进行图像处理而求出粒径分布,在由此获得的粒度分布中,将自小粒径侧起的累计通过率为50%的粒径作为中值粒径D50而求出。此时,也与荧光体粒子的情形相同,根据荧光体片材的剖面SEM图像求出的聚硅氧烷微粒的平均粒径,与真实的平均粒径相比,理论上为真实的平均粒径的78.5%、实际上大约为70%~85%的值,本发明中的聚硅氧烷微粒的平均粒径定义为通过上述测定方法而求出的值。In the present invention, the average particle diameter of the polysiloxane fine particles is represented by a median diameter (D50), and the lower limit of the average particle diameter is preferably 0.01 μm or more, more preferably 0.05 μm or more. In addition, the upper limit is preferably 2.0 μm or less, more preferably 1.0 μm or less. When the average particle diameter is 0.01 μm or more, it is easy to produce particles with a controlled particle diameter, and by making the average particle diameter 2.0 μm or less, the optical characteristics of the phosphor sheet become favorable. Moreover, the fluidity improvement effect of the resin liquid for fluorescent substance sheet manufacture can fully be acquired by making an average particle diameter into 0.01 micrometer or more and 2.0 micrometer or less. In addition, monodisperse and spherical particles are preferably used. In the present invention, the median diameter (D50) and particle size distribution of the polysiloxane fine particles contained in the phosphor sheet can be measured by SEM (scanning electron microscope) observation of a cross section of the sheet. The particle size distribution was obtained by image processing the measurement image obtained by SEM, and in the particle size distribution thus obtained, the particle size at which the cumulative pass rate from the small particle size side was 50% was defined as the median particle size D50. Find out. At this time, as in the case of the phosphor particles, the average particle diameter of the polysiloxane microparticles obtained from the cross-sectional SEM image of the phosphor sheet is theoretically the true average particle diameter compared with the true average particle diameter. The average particle diameter of the polysiloxane microparticles in the present invention is defined as a value obtained by the above-mentioned measuring method.

作为聚硅氧烷微粒的含量,相对于有机硅树脂100重量份,作为下限优选为1重量份以上,进一步优选为2重量份以上。另外,作为上限,优选为20重量份以下,进一步优选为10重量份以下。通过含有1重量份以上的聚硅氧烷微粒,从而可获得特别良好的荧光体分散稳定化效果,另一方面,通过含有20重量份以下的聚硅氧烷微粒,从而不会使有机硅组合物的粘度过度上升。The lower limit of the content of the polysiloxane fine particles is preferably 1 part by weight or more, more preferably 2 parts by weight or more, relative to 100 parts by weight of the silicone resin. In addition, the upper limit is preferably 20 parts by weight or less, more preferably 10 parts by weight or less. By containing more than 1 part by weight of polysiloxane fine particles, a particularly good phosphor dispersion stabilization effect can be obtained. On the other hand, by containing 20 parts by weight or less of polysiloxane fine particles, it is possible to prevent the combination of silicone The viscosity of the substance rises excessively.

(其他成分)(other ingredients)

对于本发明的荧光体片材,为了赋予粘度调整、光扩散、涂布性提高等效果,还可以进一步包含无机微粒填充剂。作为上述用途的填充剂,可举出二氧化硅、氧化铝、二氧化钛,氧化锆、钛酸钡、氧化锌等。The phosphor sheet of the present invention may further contain an inorganic fine particle filler in order to impart effects such as viscosity adjustment, light diffusion, and coating property improvement. Examples of fillers for the above-mentioned use include silica, alumina, titania, zirconia, barium titanate, zinc oxide and the like.

另外,在本发明中,在制作荧光体片材时所使用的有机硅树脂组合物中,作为其他成分,为了抑制常温下的固化、延长贮存期,优选配合炔属醇(acetylenealcohol)等氢化硅烷化反应阻滞剂。另外,作为其他添加剂,还可以添加用于涂布膜稳定化的均化剂(levellingagent),作为片材表面的改性剂的硅烷偶联剂等粘接辅助剂等。In addition, in the present invention, in the silicone resin composition used for producing the phosphor sheet, as other components, in order to suppress curing at room temperature and prolong the shelf life, it is preferable to mix hydrosilanes such as acetylenealcohol or the like. chemical reaction blocker. In addition, as other additives, a leveling agent for stabilizing the coating film, an adhesion auxiliary agent such as a silane coupling agent as a modifier of the sheet surface, and the like may be added.

(膜厚)(film thickness)

本发明的荧光体片材的膜厚由荧光体含量和所期望的光学特性决定。关于荧光体含量,如上所述,从操作性的观点考虑存在限度,所以膜厚优选为10μm以上。另一方面,从提高荧光体片材的光学特性·放热性的观点考虑,荧光体片材的膜厚优选为1000μm以下,更优选为200μm以下,进一步优选为100μm以下。通过使荧光体片材为1000μm以下的膜厚,能够降低由粘合剂树脂、荧光体导致的光吸收、光散射,因此,形成光学优异的荧光体片材。The film thickness of the phosphor sheet of the present invention is determined by the phosphor content and desired optical properties. The phosphor content is limited from the viewpoint of handling as described above, so the film thickness is preferably 10 μm or more. On the other hand, the film thickness of the phosphor sheet is preferably 1000 μm or less, more preferably 200 μm or less, still more preferably 100 μm or less, from the viewpoint of improving the optical properties and heat dissipation of the phosphor sheet. By making the phosphor sheet have a film thickness of 1000 μm or less, light absorption and light scattering by the binder resin and the phosphor can be reduced, and thus an optically excellent phosphor sheet can be formed.

另外,若片材膜厚存在偏差,则每一个LED芯片的荧光体量产生差异,结果,发光光谱(色温度、亮度、色度)产生偏差。因此,片材膜厚的偏差优选在±5%以内,进一步优选在±3%以内。In addition, if the film thickness of the sheet varies, the amount of phosphor varies for each LED chip, and as a result, the emission spectrum (color temperature, luminance, chromaticity) varies. Therefore, the variation in film thickness of the sheet is preferably within ±5%, more preferably within ±3%.

本发明中的荧光体片材的膜厚是指,基于JISK7130(1999)塑料-膜及片材-厚度测定方法中的利用机械扫描进行的厚度的测定方法A法而测得的膜厚(平均膜厚)。另外,使用所述平均膜厚,基于下述数学式计算出荧光体片材的膜厚偏差。更具体而言,使用利用机械扫描进行的厚度的测定方法A法的测定条件,使用市售的接触式厚度计等测微计测定膜厚,计算得到的膜厚的最大值或最小值与平均膜厚之差,用该值除以平均膜厚,并用百分率表示,得到的值为膜厚偏差B(%)。The film thickness of the phosphor sheet in the present invention refers to the film thickness (average film thickness). Moreover, using the said average film thickness, the film thickness variation of a phosphor sheet was calculated based on the following mathematical formula. More specifically, the film thickness is measured using a micrometer such as a commercially available contact thickness meter under the measurement conditions of the method A method of measuring the thickness by mechanical scanning, and the calculated maximum value or minimum value and the average value of the film thickness are For the difference in film thickness, this value is divided by the average film thickness and expressed as a percentage, and the obtained value is the film thickness deviation B (%).

膜厚偏差(%)={(最大膜厚偏离值-平均膜厚)/平均膜厚}×100Film thickness deviation (%)={(maximum film thickness deviation value-average film thickness)/average film thickness}×100

此处,最大膜厚偏离值选择膜厚的最大值或最小值中与平均膜厚之差大的一者。Here, as the maximum film thickness deviation value, one of the maximum value or the minimum value of the film thickness, which has a larger difference from the average film thickness, is selected.

<支承基材><Support base material>

支承基材保护形状易于变形的荧光体片材,使保管、搬运、加工变得容易,并且在向LED芯片的粘贴工序中使操作变得容易,防止对加压基材的附着、污染。The support substrate protects the easily deformable phosphor sheet, facilitates storage, transportation, and processing, and facilitates handling in the process of attaching LED chips to prevent adhesion and contamination to the press substrate.

(支承基材的物性)(Physical properties of supporting substrate)

支承基材在23℃时断裂伸长率为200%以上,且杨氏模量为600MPa以下。支承基材的断裂伸长率小于200%或杨氏模量大于600MPa时,在LED粘贴工序中在侧面与荧光体片材之间产生空隙,追随性恶化。从对LED芯片的追随性的观点考虑,断裂伸长率优选为300%以上,更优选为500%以上。另外,杨氏模量优选为400MPa以下,更优选为100MPa以下,进一步优选为10MPa以下。对于断裂伸长率的上限,没有特别限制,从裁剪变得容易的观点考虑,优选为1500%以下,更优选为1000%以下,进一步优选为800%以下,特别优选为750%以下。另外,对于杨氏模量的下限,没有特别限制,从支承基材不变形地保护荧光体片材的观点考虑,优选为0.1MPa以上,更优选为1MPa以上,进一步优选为1.6MPa以上。The support substrate has an elongation at break of 200% or more at 23°C and a Young's modulus of 600 MPa or less. When the elongation at break of the supporting base material is less than 200% or the Young's modulus exceeds 600 MPa, gaps are formed between the side surface and the phosphor sheet in the LED bonding process, resulting in poor followability. From the viewpoint of followability to the LED chip, the elongation at break is preferably 300% or more, and more preferably 500% or more. In addition, the Young's modulus is preferably 400 MPa or less, more preferably 100 MPa or less, even more preferably 10 MPa or less. The upper limit of the elongation at break is not particularly limited, but is preferably 1500% or less, more preferably 1000% or less, still more preferably 800% or less, particularly preferably 750% or less, from the viewpoint of ease of cutting. The lower limit of Young's modulus is not particularly limited, but it is preferably 0.1 MPa or more, more preferably 1 MPa or more, and still more preferably 1.6 MPa or more, from the viewpoint of protecting the phosphor sheet without deformation of the supporting substrate.

断裂伸长率及杨氏模量的测定可利用基于ASTM-D882-12的方法进行测定。作为具体的测定法,在保持一定温度的环境下,使用拉伸试验机,以300mm/分钟的速度拉伸试验片。将试验前的试验片长度设为L0、将切断(断裂)后的试验片的长度设为L时,通过下式计算出断裂伸长率。The elongation at break and the Young's modulus can be measured by a method based on ASTM-D882-12. As a specific measurement method, the test piece is stretched at a speed of 300 mm/min using a tensile testing machine in an environment maintained at a constant temperature. When the length of the test piece before the test is L 0 and the length of the test piece after cutting (breaking) is L, the elongation at break was calculated by the following formula.

断裂伸长率(%)=100×(L-L0)/L0Elongation at break (%)=100×(LL 0 )/L 0 .

另外,杨氏模量可由试验片即将变形前的最大弹性、即将试验片的伸长度和对其施加的负荷制图而得到的S-S曲线的最大倾斜求出。对于断裂伸长率及杨氏模量的测定次数,为了提高精度,将测定次数设为3次,求出其平均值。In addition, the Young's modulus can be obtained from the maximum elasticity of the test piece immediately before deformation, that is, the maximum inclination of the S-S curve obtained by plotting the elongation of the test piece and the load applied thereto. The number of measurements of elongation at break and Young's modulus was three times in order to improve accuracy, and the average value was calculated|required.

如上所述,荧光体片材的粘贴温度优选为60℃~150℃,进一步优选为60℃~120℃。因此,作为支承基材的热特性,优选在该温度范围不发生熔化。从该观点考虑,支承基材的熔点优选为120℃以上,进一步优选为150℃以上。As described above, the sticking temperature of the phosphor sheet is preferably 60°C to 150°C, more preferably 60°C to 120°C. Therefore, as the thermal characteristics of the supporting base material, it is preferable that melting does not occur in this temperature range. From this viewpoint, the melting point of the support substrate is preferably 120°C or higher, more preferably 150°C or higher.

另外,对于支承基材,从同时实现用于保持荧光体片材的粘接性和用于在粘贴于LED芯片之后将支承基材剥离的剥离性的观点考虑,支承基材的剥离力优选在0.5~2.5N/20mm的范围内。此处所述的剥离力,是通过JISZ0237(2009)中规定的粘合胶带·粘合片材方法中的、利用90度撕裂进行的粘合性试验方法而得到的值。In addition, for the supporting base material, the peeling force of the supporting base material is preferably between In the range of 0.5 ~ 2.5N/20mm. The peeling force described here is a value obtained by an adhesiveness test method by a 90-degree tear in the adhesive tape/adhesive sheet method prescribed in JIS Z0237 (2009).

对于支承基材,通常而言,从发光的均匀性的观点考虑,表面平均粗糙度Ra优选为1μm以下,但为了提高光射出的量,可以进行压纹加工等表面加工。In general, the supporting base material preferably has an average surface roughness Ra of 1 μm or less from the viewpoint of uniformity of light emission, but surface processing such as embossing may be performed in order to increase the amount of emitted light.

(支承基材的材质)(Material of supporting substrate)

作为支承基材的材质,具体而言,可举出聚氯乙烯、聚氨酯、有机硅(silicone)、低密度聚乙烯(LDPE)、聚乙烯醇缩醛等。聚氯乙烯根据增塑剂的添加量的不同而存在硬质和软质,优选为软质的聚氯乙烯。另外,有机硅中有树脂和橡胶,优选伸缩性优异的有机硅橡胶。其中,从高伸长率、低杨氏模量、热特性、粘接性及剥离性的观点考虑,优选聚氯乙烯、聚氨酯或有机硅。更优选为聚氯乙烯或聚氨酯,特别优选为软质聚氯乙烯或聚氨酯,最优选为聚氨酯(聚氨酯膜)。Specific examples of the material of the supporting substrate include polyvinyl chloride, polyurethane, silicone, low-density polyethylene (LDPE), and polyvinyl acetal. Polyvinyl chloride has hard and soft properties depending on the amount of plasticizer added, and soft polyvinyl chloride is preferred. In addition, there are resins and rubbers in silicone, and silicone rubber excellent in stretchability is preferable. Among them, polyvinyl chloride, polyurethane, or silicone is preferable from the viewpoint of high elongation, low Young's modulus, thermal properties, adhesiveness, and peelability. It is more preferably polyvinyl chloride or polyurethane, particularly preferably soft polyvinyl chloride or polyurethane, most preferably polyurethane (polyurethane film).

上述材质的膜可通过例如低密度化、无拉伸化、柔软成分的单体量的增量、增塑剂的增量等,将断裂伸长率及杨氏模量控制在上述优选的范围内。For the film made of the above materials, elongation at break and Young's modulus can be controlled within the above preferred ranges by, for example, low density, non-stretching, increase in the monomer amount of the soft component, increase in plasticizer, etc. Inside.

(支承基材的膜厚)(Film thickness of supporting substrate)

支承基材的膜厚优选为5μm~500μm,更优选为20μm~200μm,进一步优选为40μm~100μm。另外,支承基材的膜厚相对于荧光体片材膜厚优选满足以下数学式。The film thickness of the supporting substrate is preferably 5 μm to 500 μm, more preferably 20 μm to 200 μm, and still more preferably 40 μm to 100 μm. In addition, the film thickness of the supporting base material preferably satisfies the following mathematical formula with respect to the film thickness of the phosphor sheet.

1/5≤(支承基材的膜厚/荧光体片材的膜厚)≤31/5≤(film thickness of support substrate/film thickness of phosphor sheet)≤3

为下限以上时,支承基材可得到为保护荧光体片材而充分的机械强度。另外,为上限以下时,在荧光体片材的粘贴中,可得到对LED芯片充分的追随性。从该观点考虑,(支承基材的膜厚/荧光体片材的膜厚)的下限更优选为1/2以上。另外,上限更优选为2以下,进一步优选为1以下。When it is more than the lower limit, the supporting base material can acquire sufficient mechanical strength for protecting a fluorescent substance sheet. Moreover, when it is below an upper limit, sufficient followability with respect to an LED chip can be acquired in bonding of a fluorescent substance sheet. From this point of view, the lower limit of (film thickness of supporting substrate/film thickness of phosphor sheet) is more preferably 1/2 or more. In addition, the upper limit is more preferably 2 or less, and still more preferably 1 or less.

<层叠体中的其他构成><Other components in the laminate>

本发明的层叠体还可以在支承基材上具有粘合剂。图2是具有粘合剂的层叠体的例子。这种情况下,以使涂布了粘合剂4的面与荧光体片材3接触的方式形成层叠体1,通过粘合剂4将荧光体片材3固定在支承基材2上。从将荧光体片材保持在支承基材上的观点考虑,粘合剂的粘合力优选为0.1N/20mm以上。另外,从用荧光体片材被覆LED芯片后将支承基材剥离的观点考虑,粘合剂的粘合力优选为1.0N/20mm以下。The laminate of the present invention may also have an adhesive on the supporting substrate. Fig. 2 is an example of a laminate with an adhesive. In this case, the laminate 1 is formed so that the surface coated with the adhesive 4 is in contact with the phosphor sheet 3 , and the phosphor sheet 3 is fixed to the support base 2 via the adhesive 4 . From the viewpoint of holding the phosphor sheet on the support base, the adhesive force of the adhesive is preferably 0.1 N/20 mm or more. In addition, the adhesive force of the adhesive is preferably 1.0 N/20 mm or less from the viewpoint of peeling the support substrate after covering the LED chip with the phosphor sheet.

另外,本发明的层叠体基于保护荧光体片材的表面的目的,还可以在荧光体片材上设置保护基材。作为保护基材,可以使用已知的金属、膜、玻璃、陶瓷、纸等。具体而言,可举出铝(也包含铝合金)等的金属板、箔;乙酸纤维素、聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚酯、聚酰胺、聚酰亚胺、聚苯硫醚、聚苯乙烯、聚丙烯、聚碳酸酯、芳族聚酰胺、氟树脂等的膜;树脂层压纸、树脂涂布纸等加工纸。优选预先对上述保护基材的表面进行剥离处理,以使荧光体片材在保管中不发生附着。另外,优选强度高的基材,以使在保管中或搬运中荧光体片材不发生弯曲或表面受伤。从满足上述要求特性的观点考虑,优选为膜或纸,其中,从经济性和操作性方面考虑,更优选为剥离处理PET膜或剥离纸。In addition, in the laminate of the present invention, for the purpose of protecting the surface of the phosphor sheet, a protective base material may be provided on the phosphor sheet. As the protective substrate, known metals, films, glass, ceramics, paper and the like can be used. Specifically, metal plates and foils such as aluminum (including aluminum alloys); cellulose acetate, polyethylene terephthalate (PET), polyethylene, polyester, polyamide, polyimide, etc.; Films of amine, polyphenylene sulfide, polystyrene, polypropylene, polycarbonate, aramid, fluororesin, etc.; processed paper such as resin-laminated paper, resin-coated paper, etc. It is preferable to perform peeling treatment on the surface of the protective substrate in advance so that the phosphor sheet does not adhere during storage. In addition, a high-strength substrate is preferable so that the phosphor sheet does not bend or have surface damage during storage or transportation. From the viewpoint of satisfying the above-mentioned required properties, a film or paper is preferable, and among them, a release-treated PET film or release paper is more preferable from the viewpoint of economy and handleability.

<层叠体的制造方法><Manufacturing method of laminated body>

本发明的层叠体的制造方法可以为能够形成所述层叠体的任意方法,可列举直接涂布法、利用粘合剂进行的转印法及热转印法。The method for producing the laminate of the present invention may be any method capable of forming the laminate, and examples thereof include a direct coating method, a transfer method using an adhesive, and a thermal transfer method.

直接涂布法是在将荧光体片材制作用组合物涂布在支承基材上之后进行加热固化的方法。需要说明的是,“荧光体片材制作用组合物”的详细内容在后面进行叙述,所谓“荧光体片材制作用组合物”,是作为荧光体片材形成用的涂布液而使用的组合物,是将荧光体分散于树脂中而得到的组合物。The direct coating method is a method in which the composition for producing a phosphor sheet is coated on a support substrate and then cured by heating. The details of the "phosphor sheet preparation composition" will be described later, but the "phosphor sheet preparation composition" is used as a coating liquid for phosphor sheet formation. The composition is a composition obtained by dispersing a phosphor in a resin.

利用粘合剂进行的转印法为下述方法,即,将具有粘合剂的支承基材的粘合面粘贴于在第二基材上制作的荧光体片材,将荧光体片材从第二基材上转印到支承基材上。The transfer method using an adhesive is a method in which the adhesive surface of a supporting base material having an adhesive is attached to a phosphor sheet produced on a second base material, and the phosphor sheet is removed from the The second substrate is transferred onto the support substrate.

热转印法为下述方法,即,将在第二基材上制作的荧光体片材与支承基材进行加热压接,将荧光体片材从第二基材上转印到支承基材上。The thermal transfer method is a method in which a phosphor sheet produced on a second base material is bonded to a support base material under heat and pressure, and the phosphor sheet is transferred from the second base material to the support base material. superior.

作为层叠体的制造方法,从制作膜厚精度高的荧光体片材的观点考虑,优选为利用粘合剂进行的转印法和热转印法,从粘贴LED芯片后的支承基材的剥离性的观点考虑,进一步优选热转印法。As a method for producing the laminate, from the viewpoint of producing a phosphor sheet with high film thickness accuracy, the transfer method and thermal transfer method using an adhesive are preferred. From the viewpoint of stability, thermal transfer method is more preferable.

此处,对荧光体片材的制作进行说明。需要说明的是,以下是一个例子,荧光体片材的制作方法并不限定于此。首先,作为荧光体片材形成用的涂布液,制作将荧光体分散于树脂中而成的组合物(以下称为“荧光体片材制作用组合物”)。基于抑制荧光体的沉降的目的,可以添加聚硅氧烷微粒,还可以添加无机微粒、均化剂及粘接助剂等其他添加物。另外,在作为树脂使用加成反应型有机硅树脂的情况下,也可以配合氢化硅烷化反应阻滞剂来延长贮存期。为了得到适当的流动性,根据需要,也可以添加溶剂从而制成溶液。溶剂只要能够调整流动状态的树脂的粘度即可,没有特别限制。例如可举出甲苯、甲基乙基酮、甲基异丁基酮、己烷、丙酮、萜品醇等。Here, production of the phosphor sheet will be described. In addition, the following is an example, and the manufacturing method of a fluorescent substance sheet is not limited to this. First, as a coating liquid for phosphor sheet formation, a composition in which phosphor was dispersed in a resin (hereinafter referred to as "phosphor sheet preparation composition") was produced. For the purpose of suppressing sedimentation of the phosphor, polysiloxane fine particles may be added, and other additives such as inorganic fine particles, leveling agents, and adhesion aids may be added. In addition, when an addition reaction type silicone resin is used as the resin, a hydrosilylation reaction retarder may be added to prolong the pot life. In order to obtain appropriate fluidity, a solvent may be added to form a solution as necessary. The solvent is not particularly limited as long as it can adjust the viscosity of the resin in a fluid state. For example, toluene, methyl ethyl ketone, methyl isobutyl ketone, hexane, acetone, terpineol, etc. are mentioned.

按照规定的组成混合这些成分后,用均化器、自转/公转型搅拌机、三辊磨、球磨机、行星式球磨机、珠磨机等搅拌机、混炼机均匀地进行混合分散,由此得到荧光体片材制作用组合物。混合分散后或在混合分散的过程中,还优选在真空或减压条件下进行脱泡。After mixing these components according to the prescribed composition, they are uniformly mixed and dispersed by homogenizers, rotation/revolution type mixers, three-roll mills, ball mills, planetary ball mills, bead mills, and other mixers and kneaders to obtain phosphors. Composition for sheet production. After mixing and dispersing or during mixing and dispersing, it is also preferable to perform defoaming under vacuum or reduced pressure.

接下来,将荧光体片材制作用组合物涂布在基材上,进行干燥。涂布可利用逆转辊涂布机、刮片涂布机(bladecoater)、缝模涂布机(slitdiecoater)、直接槽辊涂布机(directgravurecoater)、补偿槽辊涂布机(offsetgravurecoater)、逆转辊涂布机、刮片涂布机、吻合式涂布机、自然辊涂布机(naturalrollcoater)、气刀涂布机、辊式刮刀涂布机(rollbladecoater)、可调刮棒辊式刮刀涂布机(vari-barrollbladecoater)、双流涂布机(twostreamcoater)、棒式涂布机、线棒涂布机(wirebarcoater)、涂敷器(applicator)、浸涂机、淋幕涂布机、旋转涂布机、刮刀式涂布机(knifecoater)等进行。为了获得荧光体片材的膜厚均匀性,优选用缝模涂布机进行涂布。另外,本发明的荧光体片材还可以使用丝网印刷、凹版印刷、平版印刷等印刷法来制作。使用印刷法时,特别优选使用丝网印刷。Next, the composition for phosphor sheet production is applied on the base material and dried. Coating can use reverse roll coater, blade coater, slit die coater, direct gravure coater, offset gravure coater, reverse roll Coater, blade coater, kiss coater, natural roll coater (natural roll coater), air knife coater, roll blade coater (roll blade coater), adjustable bar roll blade coating Machine (vari-barroll bladecoater), double stream coater (twostreamcoater), rod coater, wire bar coater (wirebarcoater), applicator (applicator), dip coater, curtain coater, spin coater machine, knife coater (knifecoater), etc. In order to obtain the film thickness uniformity of the phosphor sheet, it is preferable to perform coating with a slot die coater. In addition, the phosphor sheet of the present invention can also be produced using printing methods such as screen printing, gravure printing, and offset printing. When using the printing method, it is particularly preferable to use screen printing.

对于荧光体片材的干燥·固化,可使用热风干燥机、红外线干燥机等通常的加热装置进行。加热固化条件通常为在80℃~200℃下2分钟~3小时,但为了成为可通过加热而软化并显示出粘合性的所谓B阶段状态,优选为在80℃~120℃下加热30分钟~2小时。Drying and curing of the phosphor sheet can be carried out using a common heating device such as a hot air dryer or an infrared dryer. The heat curing conditions are usually 2 minutes to 3 hours at 80°C to 200°C, but it is preferable to heat at 80°C to 120°C for 30 minutes in order to obtain a so-called B-stage state that can be softened by heating and exhibit adhesiveness. ~2 hours.

在使用第二基材(其在利用粘合剂进行的转印法和热转印法中被采用)的情况下,没有特别限制,可以使用已知的金属、膜、玻璃、陶瓷、纸等。为了制作膜厚精度高的荧光体片材,优选在23℃时第二基材的断裂伸长率小于200%,且杨氏模量大于600MPa,尤其是杨氏模量更优选为4000MPa以上。另外,优选为在树脂的固化反应快速进行的150℃以上的温度下变形少的基材。In the case of using the second substrate (which is employed in the transfer method using an adhesive and the thermal transfer method), there is no particular limitation, and known metals, films, glass, ceramics, paper, etc. can be used . In order to produce a phosphor sheet with high film thickness accuracy, the elongation at break of the second base material at 23°C is preferably less than 200%, and the Young's modulus is greater than 600 MPa, especially the Young's modulus is more preferably 4000 MPa or more. In addition, it is preferably a base material with little deformation at a temperature of 150° C. or higher at which the curing reaction of the resin proceeds rapidly.

具体而言,可举出铝(也包括铝合金)、锌、铜、铁等金属的板或箔、乙酸纤维素、聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚酯、聚酰胺、聚酰亚胺、聚苯硫醚、聚苯乙烯、聚丙烯、聚碳酸酯、聚乙烯醇缩醛、芳族聚酰胺等塑料的膜、层压有所述塑料的纸、或经所述塑料涂布过的纸、层压或蒸镀有所述金属的纸、层压或蒸镀有所述金属的塑料膜等。Specifically, aluminum (including aluminum alloy), zinc, copper, iron and other metal plates or foils, cellulose acetate, polyethylene terephthalate (PET), polyethylene, polyester, Films of plastics such as polyamide, polyimide, polyphenylene sulfide, polystyrene, polypropylene, polycarbonate, polyvinyl acetal, aramid, paper laminated with the above plastics, or Paper coated with the plastic, paper laminated or vapor-deposited with the metal, plastic film laminated or vapor-deposited with the metal, and the like.

上述基材中,从上述要求特性、经济性方面考虑,优选为树脂膜,特别优选为PET膜或聚苯硫醚膜。另外,在树脂的固化、或将荧光体片材粘贴在LED上时需要200℃以上的高温的情况下,从耐热性方面考虑,优选聚酰亚胺膜。Among the above-mentioned substrates, resin films are preferable, and PET films or polyphenylene sulfide films are particularly preferable in view of the above-mentioned required properties and economical efficiency. In addition, when a high temperature of 200° C. or higher is required for curing the resin or attaching the phosphor sheet to the LED, a polyimide film is preferable from the viewpoint of heat resistance.

另外,为了使荧光体片材的转印变得容易,优选预先对第二基材的表面进行剥离处理。In addition, in order to facilitate the transfer of the phosphor sheet, it is preferable to perform a peeling treatment on the surface of the second base material in advance.

第二基材的厚度没有特别限制,作为下限,优选为30μm以上,更优选为50μm以上。另外,作为上限,优选为5000μm以下,更优选为3000μm以下。The thickness of the second base material is not particularly limited, but the lower limit is preferably 30 μm or more, more preferably 50 μm or more. In addition, the upper limit is preferably 5000 μm or less, more preferably 3000 μm or less.

为了不混入空气,从第二基材向支承基材上的利用粘合剂进行的转印优选利用带有辊的层压机进行。In order not to mix air, the transfer from the second base material to the support base material with the adhesive is preferably performed using a laminator with rollers.

另外,从第二基材向支承基材上的热转印优选利用具备加热机构和加压机构的热层压机进行。此处,从使荧光体片材软化、显示粘合性的观点考虑,热转印优选在60℃以上进行。另外,从保持荧光体片材的B阶段状态(即半固化的状态)的观点考虑,优选在120℃以下进行。另外,从维持膜厚均匀性的观点考虑,加压压力优选为0.3MPa以下,加压时间优选为30秒以下,更优选为10秒以下。In addition, thermal transfer from the second base material to the support base material is preferably performed by a thermal laminator equipped with a heating mechanism and a pressurizing mechanism. Here, thermal transfer is preferably performed at 60° C. or higher from the viewpoint of softening the phosphor sheet and exhibiting adhesiveness. Moreover, it is preferable to carry out at 120 degreeC or less from a viewpoint of maintaining the B-stage state (that is, the semi-cured state) of a fluorescent substance sheet. In addition, from the viewpoint of maintaining the uniformity of film thickness, the pressing pressure is preferably 0.3 MPa or less, and the pressing time is preferably 30 seconds or less, more preferably 10 seconds or less.

<发光装置的制造方法><Manufacturing method of light-emitting device>

对使用了本发明的层叠体的发光装置的制造方法进行说明。A method of manufacturing a light-emitting device using the laminate of the present invention will be described.

在本发明中,优选通过具有下述工序的制造方法来制造发光装置,所述工序为将接合(安装)于基板上的LED芯片的发光面用本发明的层叠体的荧光体片材进行被覆的工序(被覆工序)。In the present invention, it is preferable to manufacture a light-emitting device by a manufacturing method having the step of coating the light-emitting surface of an LED chip bonded (mounted) on a substrate with the phosphor sheet of the laminate of the present invention. process (coating process).

另外,在LED芯片的发光面为LED芯片的上表面及侧面的情况下等,优选通过具有下述工序的制造方法来制造发光装置,所述工序为将接合(安装)于基板上的LED芯片的上表面及侧面用本发明的层叠体的荧光体片材进行被覆的工序(被覆工序)。In addition, when the light-emitting surface of the LED chip is the upper surface and the side surface of the LED chip, etc., it is preferable to manufacture the light-emitting device by a manufacturing method having the following steps of bonding (mounting) the LED chip on the substrate. A step of coating the upper surface and side surfaces of the laminate with the phosphor sheet of the present invention (coating step).

如上所述,使用了本发明的层叠体的发光装置优选如下制造,即,在将LED芯片接合(安装)在基板上后,使用本发明的层叠体将LED芯片的上部发光面及侧部发光面用荧光体片材进行被覆。As described above, the light-emitting device using the laminated body of the present invention is preferably produced by bonding (mounting) the LED chip to the substrate, and then emitting light from the upper light-emitting surface and side portions of the LED chip using the laminated body of the present invention. The surface was covered with a phosphor sheet.

基板是将LED芯片固定并与布线连接的物质。基板例如可以为基底基板(basesubstrate),还可以为子基板(submountsubstrate)。作为基板的材料,没有特别限定,可列举聚邻苯二甲酰胺(PPA)、液晶聚合物、有机硅等树脂、氮化铝(AlN)、氧化铝(Al2O3)、氮化硼(BN)等陶瓷、铝等金属。The substrate is a substance that fixes the LED chip and connects it to wiring. The substrate may be, for example, a base substrate, or may be a submount substrate. The material of the substrate is not particularly limited, and examples thereof include resins such as polyphthalamide (PPA), liquid crystal polymer, and silicone, aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), boron nitride ( BN) and other ceramics, aluminum and other metals.

使用在基板上通过例如银等形成电极图案的基板。另外,还可以具有放热机构。A substrate on which an electrode pattern is formed with, for example, silver or the like is used. In addition, a heat release mechanism may also be provided.

LED芯片优选使用发出蓝色光或紫外光的LED芯片。作为这样的LED芯片,特别优选氮化镓系的LED芯片。As the LED chip, it is preferable to use an LED chip that emits blue light or ultraviolet light. As such an LED chip, a gallium nitride-based LED chip is particularly preferable.

LED芯片的模式可以使用横向型、垂直型、倒装芯片型中的任意种,从高亮度、高放热性的观点考虑,特别优选倒装芯片型。在本发明中,所谓将LED芯片接合(安装)在基板上,优选为将LED芯片与基板电接合的状态。对于倒装芯片的接合(安装),可举出焊料接合、共晶接合、导电性糊剂接合。The pattern of the LED chip can be any of a lateral type, a vertical type, and a flip-chip type, but the flip-chip type is particularly preferable from the viewpoint of high brightness and high heat dissipation. In the present invention, bonding (mounting) the LED chip to the substrate is preferably a state where the LED chip is electrically bonded to the substrate. The bonding (mounting) of a flip chip includes solder bonding, eutectic bonding, and conductive paste bonding.

可以将单个LED芯片接合(安装)在基板上,还可以将多个LED芯片接合(安装)在基板上。另外,可以将各个封装体(package)分别用荧光体片材进行被覆,还可以将排列有多个封装体而成的物件一并用荧光体片材进行被覆后,通过切割等进行单片化。A single LED chip may be bonded (mounted) to a substrate, or a plurality of LED chips may be bonded (mounted) to a substrate. In addition, individual packages may be coated with a phosphor sheet, or an article in which a plurality of packages are arrayed may be coated with a phosphor sheet collectively, and then singulated by dicing or the like.

LED芯片的膜厚没有特别限定,从在LED芯片上表面、角部处降低施加于荧光体片材的压力、维持膜厚均匀性的观点考虑,优选为500μm以下,更优选为300μm以下,进一步优选为200μm以下。The film thickness of the LED chip is not particularly limited, but it is preferably 500 μm or less, more preferably 300 μm or less, from the viewpoint of reducing the pressure applied to the phosphor sheet on the upper surface and corners of the LED chip and maintaining uniform film thickness. Preferably it is 200 μm or less.

另外,LED芯片及其与基板的连接部的总膜厚和荧光体片材的膜厚优选满足以下关系式。In addition, the total film thickness of the LED chip and its connection with the substrate and the film thickness of the phosphor sheet preferably satisfy the following relational expression.

1≤(LED芯片及其与基板的连接部的总膜厚/荧光体片材的膜厚)≤10。1≦(total film thickness of the LED chip and its connection with the substrate/film thickness of the phosphor sheet)≦10.

为下限以上时,易于抑制发光色的方位不均。另外,为上限以下时,易于维持荧光体片材膜厚均匀性。从该观点考虑,下限优选为2以上。另外,上限优选为5以下,更优选为4以下。When it is more than the lower limit, it becomes easy to suppress the azimuth unevenness of the emission color. Moreover, when it is below an upper limit, it becomes easy to maintain the film thickness uniformity of a phosphor sheet. From this viewpoint, the lower limit is preferably 2 or more. In addition, the upper limit is preferably 5 or less, and more preferably 4 or less.

从使荧光体片材软化、显示出粘合性的方面考虑,本发明的层叠体向LED芯片的粘贴优选在加热条件下进行。从荧光体片材充分软化、并且不发生急剧的固化的观点考虑,加热温度优选为60℃~150℃,更优选为60℃~120℃。From the viewpoint of softening the phosphor sheet and exhibiting adhesiveness, it is preferable to perform the bonding of the laminate of the present invention to the LED chip under heating conditions. The heating temperature is preferably from 60°C to 150°C, more preferably from 60°C to 120°C, from the viewpoint of sufficiently softening the phosphor sheet and preventing rapid curing.

另外,从提高对芯片侧面的追随性的观点考虑,层叠体向LED芯片的粘贴优选在加压条件下进行。从能够将荧光体片材按压在LED芯片侧面、并且能够维持膜厚的方面考虑,压力优选为0.1MPa~0.3MPa。In addition, it is preferable to carry out the bonding of the laminate to the LED chip under pressure from the viewpoint of improving the followability to the side surface of the chip. The pressure is preferably 0.1 MPa to 0.3 MPa from the viewpoint that the phosphor sheet can be pressed against the side surface of the LED chip and the film thickness can be maintained.

作为加压方法,具体而言,可列举使挠性片材膨胀而进行挤压的方法、注入空气等气体而以非接触的方式进行挤压的方法、按压根据LED芯片的形状所制的模型而进行挤压的方法、或用辊进行挤压的方法。另外,还可以将这些方法组合多种。Specific examples of pressurization methods include a method of pressing a flexible sheet by expanding it, a method of injecting gas such as air and pressing it in a non-contact manner, and pressing a mold made according to the shape of an LED chip. And the method of extruding, or the method of extruding with a roll. In addition, these methods can also be combined multiple types.

进而,为了防止在荧光体片材与LED芯片及基板之间混入空气,层叠体向LED芯片的粘贴优选在真空气氛条件下进行。Furthermore, in order to prevent air from being mixed between the phosphor sheet, the LED chip, and the substrate, the bonding of the laminate to the LED chip is preferably performed under vacuum atmosphere conditions.

作为使用本发明的层叠体进行向LED芯片的粘贴的装置,只要为满足上述条件的装置即可,没有特别限定,从通用性高、生产率优异的观点考虑,优选为具有设置了压制机构(在压板(platen)上附带设置有挠性片材)的真空腔室的真空层叠装置。作为这样的真空层叠装置,例如可举出专利3646042号公报中记载的装置。The device for attaching the LED chip using the laminate of the present invention is not particularly limited as long as it satisfies the above-mentioned conditions, but is preferably equipped with a pressing mechanism (in the A vacuum lamination device with a vacuum chamber attached to a platen (platen). As such a vacuum lamination apparatus, the apparatus described in Japanese Patent No. 3646042 is mentioned, for example.

用图3来说明使用了上述真空层叠装置的发光装置的制造方法的一个例子。该真空层叠装置由压制机构11(其具备上部压板6、挠性片材8及由它们所包围的密闭空间9、和空气注入·排出口10)、具有加热器的下部压板7、和真空腔室5(其具有另一空气注入·排出口12)构成。在所述下部压板7上设置接合(安装)有LED芯片14的基板13,进而将包含支承基材2和荧光体片材3而成的层叠体1以荧光体片材3与LED芯片表面接触的朝向依次重合(图3a)。接下来,从空气注入·排出口10及空气注入·排出口12,沿图3b中以虚线表示的箭头的方向将空气排出(抽真空),由此使真空腔室5及压制机构11的密闭空间9内成为真空气氛(图3b)。接下来,一边用未图示的加热器对下部压板7进行加热,一边从空气注入·排出口10沿图3c的箭头的方向注入空气,由此向压制机构11的密闭空间9注入空气,使挠性片材8膨胀从而将层叠体1粘贴在LED芯片14上(图3c)。接下来,从空气注入·排出口12沿图3d的箭头的方向注入空气,由此向真空腔室5内注入空气,恢复至常压(图3d),取出发光装置15(图3e)。最后从粘贴在发光装置15上的层叠体1中除去支承基材2(图3f)。如上所述,本发明的发光装置最终优选为图3f所示那样的不含支承基材的构成。这是因为,发光装置在多数情况下以从发光装置的层叠体中除去了支承基材的构成进行使用、或者流通。An example of a method of manufacturing a light-emitting device using the vacuum lamination apparatus described above will be described with reference to FIG. 3 . This vacuum lamination apparatus consists of a press mechanism 11 (which includes an upper press plate 6, a flexible sheet 8, a closed space 9 surrounded by them, and an air injection/exhaust port 10), a lower press plate 7 with a heater, and a vacuum chamber. Chamber 5 (which has another air injection and discharge port 12) constitutes. The substrate 13 on which the LED chip 14 is bonded (mounted) is provided on the lower platen 7, and the laminate 1 including the supporting base material 2 and the phosphor sheet 3 is brought into contact with the surface of the LED chip through the phosphor sheet 3. The orientations of them coincide in turn (Fig. 3a). Next, from the air injection/discharge port 10 and the air injection/discharge port 12, the air is discharged (vacuumized) in the direction of the arrow indicated by the dotted line in FIG. The space 9 becomes a vacuum atmosphere (FIG. 3b). Next, while heating the lower platen 7 with a heater not shown, air is injected from the air injection/discharge port 10 in the direction of the arrow in FIG. The flexible sheet 8 expands to stick the laminate 1 on the LED chip 14 (FIG. 3c). Next, air is injected from the air injection/exhaust port 12 in the direction of the arrow in FIG. 3d, thereby injecting air into the vacuum chamber 5, returning to normal pressure (FIG. 3d), and taking out the light emitting device 15 (FIG. 3e). Finally, the support substrate 2 is removed from the laminated body 1 attached to the light-emitting device 15 ( FIG. 3 f ). As described above, it is preferable that the light-emitting device of the present invention finally has a configuration that does not include a support base material as shown in FIG. 3f. This is because the light-emitting device is often used or distributed in a configuration in which the support base is removed from the laminated body of the light-emitting device.

通过如上所述地使用本发明的层叠体,能够通过一个阶段的挤压将荧光体片材被覆于LED芯片,能够提供生产率高的发光装置的制造方法。By using the laminate of the present invention as described above, the phosphor sheet can be coated on the LED chip by one-stage pressing, and a method for producing a light-emitting device with high productivity can be provided.

另外,例如,对于专利文献2中记载那样的现有的二阶段挤压法,即,连续进行基于挠性片材的接触挤压和基于空气注入的非接触挤压的方法,也可适用本发明的层叠体。In addition, for example, this method can also be applied to the conventional two-stage extrusion method described in Patent Document 2, that is, a method in which contact extrusion by a flexible sheet and non-contact extrusion by air injection are continuously performed. Invented laminate.

尤其是在将在基板上以1000μm以下的间隔排列的多个LED芯片用荧光体片材进行被覆的情况下,即使单独使用二阶段挤压法,也存在无法获得充分的粘贴精度(被覆精度)的倾向。但是,即使在这样的情况下,通过除使用二阶段挤压法以外还使用本发明的层叠体(使用了杨氏模量小的支承基材),能够以高精度进行被覆。Especially in the case of coating a plurality of LED chips arranged at intervals of 1000 μm or less on a substrate with a phosphor sheet, even if the two-stage extrusion method is used alone, sufficient adhesion accuracy (coating accuracy) may not be obtained. Propensity. However, even in such a case, coating can be performed with high precision by using the laminate of the present invention (using a supporting base material having a small Young's modulus) in addition to the two-stage extrusion method.

<发光装置><light emitting device>

对使用本发明的层叠体而得到的发光装置进行说明。图4是将隔着凸块(bump)18(例如金制的凸块)而接合在基板13上的LED芯片14用荧光体片材3进行被覆而成的发光装置(一个例子)的截面及上表面的示意图。A light-emitting device obtained by using the laminate of the present invention will be described. 4 is a cross-sectional view of a light-emitting device (an example) in which an LED chip 14 bonded to a substrate 13 is covered with a phosphor sheet 3 via bumps 18 (such as gold bumps). Schematic diagram of the upper surface.

在图4的下部,示出了发光装置的上表面的示意图。此处,16表示LED芯片上表面及侧面中的被覆部,17表示基材中的被覆部。In the lower part of Fig. 4, a schematic view of the upper surface of the light emitting device is shown. Here, 16 denotes the covering portion on the upper surface and side surfaces of the LED chip, and 17 denotes the covering portion on the base material.

另一方面,在图4的上部,示出了发光装置的截面。图4的上部所示的截面图作为例子示出了俯视图中的虚线II的位置处的截面。这样的被覆有荧光体片材的芯片的截面可通过下述方法进行确认,即,利用机械研磨法、离子研磨法(包括截面抛光法(crosssectionpolishingmethod))等制作截面(使截面露出),用数码显微镜(digitalmicroscope)、SEM(扫描式电子显微镜)对所述截面进行观察的方法;或者不经过研磨等截面制作工序,以非破坏的方式利用X射线CT扫描进行观察的方法。On the other hand, in the upper part of FIG. 4 , a cross section of the light emitting device is shown. The cross-sectional view shown in the upper part of FIG. 4 shows, as an example, a cross-section at the position of the dotted line II in the top view. The cross section of such a phosphor sheet-coated chip can be confirmed by making a cross section (exposing the cross section) using a mechanical grinding method, an ion milling method (including a cross section polishing method) or the like, and digitally Microscope (digital microscope), SEM (scanning electron microscope) method of observing the above-mentioned section; or method of non-destructively using X-ray CT scanning to observe without going through the section production process such as grinding.

发光装置至少包括基板、接合(安装)在基板上的LED芯片、和将LED芯片的发光面进行被覆的荧光体片材。此处,所谓发光面是指发出LED的光的面。作为发光面不同的分类,可举出如倒装芯片型、横向型芯片那样的从上表面及侧面发出光的类型、如垂直型那样的仅从上表面发出光的类型。进而作为例子还可举出设置倒装芯片的侧面反射层、使得仅从上表面发出光那样的类型。另外,基于赋予粘接性等目的,还可以在荧光体片材与LED的发光面之间存在透明树脂。此处,作为透明树脂,可举出丙烯酸树脂、环氧树脂、有机硅树脂等热固性树脂,其中,从耐热性、耐光性的观点考虑,最优选有机硅树脂。A light-emitting device includes at least a substrate, an LED chip bonded (mounted) to the substrate, and a phosphor sheet that covers the light-emitting surface of the LED chip. Here, the light-emitting surface refers to a surface that emits light from the LED. Classifications with different light emitting surfaces include types that emit light from the top surface and side surfaces such as flip chip type and lateral type chip, and types that emit light only from the top surface such as vertical type. Furthermore, as an example, a type in which a side reflective layer of a flip chip is provided so that light is emitted only from the upper surface is also mentioned. Moreover, for the purpose of providing adhesiveness etc., a transparent resin may exist between a fluorescent substance sheet and the light emitting surface of LED. Here, examples of the transparent resin include thermosetting resins such as acrylic resins, epoxy resins, and silicone resins, among which silicone resins are most preferable from the viewpoint of heat resistance and light resistance.

上述中,从能扩大发光角、且能减少方位不均的观点考虑,优选荧光体片材被覆LED芯片的上表面及侧面。更优选荧光体片材与LED芯片的上表面及侧面直接密合地进行被覆。通过使用本发明的层叠体,能够制作从层叠体所粘贴的荧光体片材与LED芯片的上部发光面面积的80%以上及侧部发光面积的50%以上直接密合地进行被覆的发光装置。最终地,也能够制作从层叠体所粘贴的荧光体片材与LED芯片的上部发光面面积的100%以上及侧部发光面积的50%以上直接密合地进行被覆的发光装置。Among the above, it is preferable to coat the upper surface and the side surface of the LED chip with the phosphor sheet from the viewpoint of expanding the light emission angle and reducing the unevenness in orientation. More preferably, the upper surface and the side surface of the LED chip are coated with the phosphor sheet in direct contact with each other. By using the laminate of the present invention, it is possible to produce a light-emitting device in which 80% or more of the upper light-emitting surface area of the LED chip and 50% or more of the side light-emitting area of the LED chip are directly covered by the phosphor sheet pasted on the laminate. . Finally, it is also possible to produce a light-emitting device in which 100% or more of the upper light-emitting surface area of the LED chip and 50% or more of the side light-emitting area of the LED chip are directly covered by the phosphor sheet pasted from the laminate.

此处,所谓“直接密合”,是指在荧光体片材与LED芯片的上部发光面或侧部发光面之间,不存在空隙等地进行粘接的状态。在对LED芯片上部发光面的被覆中,若直接密合部少,则有时荧光体片材易于剥离、成为发光装置不良的原因。在本发明中,直接密合部实质上为LED芯片上部发光面面积的80%以上时,荧光体片材的剥离不易发生,能够抑制发光装置的不良。从该观点考虑,直接密合部更优选为上部发光面面积的90%以上,最优选实质上为100%。所谓直接密合部实质上为100%,是指下述状态,即,在使用显微镜以500倍的倍率对用荧光体片材进行被覆的LED芯片的截面进行观察时,相对于LED芯片的发光面的区域,与所述LED芯片(发光面)直接密合的荧光体片材的区域为100%。Here, the term "directly adhered" refers to a state in which there is no gap or the like between the phosphor sheet and the upper light emitting surface or side light emitting surface of the LED chip. In the coating of the light-emitting surface on the upper part of the LED chip, if there are few directly bonded parts, the phosphor sheet may be easily peeled off, which may cause a defect in the light-emitting device. In the present invention, when the direct bonding portion is substantially 80% or more of the area of the light-emitting surface of the upper part of the LED chip, peeling of the phosphor sheet is less likely to occur, and defects in the light-emitting device can be suppressed. From this point of view, the direct contact portion is more preferably 90% or more of the area of the upper light emitting surface, most preferably substantially 100%. The direct bonding portion is substantially 100% refers to the following state, that is, when the cross-section of the LED chip covered with the phosphor sheet is observed with a microscope at a magnification of 500 times, relative to the light emission of the LED chip As for the area of the surface, the area of the phosphor sheet that is in direct contact with the LED chip (light-emitting surface) is 100%.

另外,如果在LED芯片的发光面与荧光体片材之间存在折射率小的空气层,则光发出效率降低。因此,在对LED芯片的侧部发光面的被覆中,如果直接密合部实质上小于LED芯片的侧部发光面积的50%,则存在来自LED芯片侧面的发光效率变低、亮度降低的情况。即,在对LED芯片的侧部发光面的被覆中,直接密合部为LED芯片的侧部发光面积的50%以上时,能够抑制来自LED芯片侧面的光发出效率的降低。从该观点考虑,直接密合部优选为LED芯片侧部发光面积的70%以上,更优选为90%以上。In addition, if an air layer with a low refractive index exists between the light emitting surface of the LED chip and the phosphor sheet, light emission efficiency will decrease. Therefore, in the coating of the side light-emitting surface of the LED chip, if the direct bonding part is substantially smaller than 50% of the side light-emitting area of the LED chip, the luminous efficiency from the side of the LED chip may decrease and the brightness may decrease. . That is, in the coating of the side light emitting surface of the LED chip, when the direct bonding portion is 50% or more of the side light emitting area of the LED chip, it is possible to suppress a decrease in light emission efficiency from the side surface of the LED chip. From this point of view, the direct bonding portion is preferably 70% or more of the light emitting area of the side portion of the LED chip, more preferably 90% or more.

在使用本发明的层叠体而得到的发光装置中,从抑制发光的方位不均的观点考虑,优选被覆LED芯片的荧光体片材的膜厚在任意部位变化小,进而,由于与来自芯片上表面的发光强度相比来自侧面的发光强度弱,所以优选LED芯片侧面部的膜厚比芯片上表面部的膜厚薄。此处,所谓发光的方位不均,是表示发光装置的光的所视效果(日语为“見え方”)因角度而异。这样的方位不均可以用在垂直方向上相距发光装置的LED芯片上表面为10cm的距离处的色温度(以下称为垂直色温度)与在倾斜45°上方相距发光装置的LED芯片上表面为10cm的距离处的色温度(以下称为45°色温度)之差的绝对值的大小来判定。在本发明中,该差的绝对值越小,发光的方位不均越小,故而优选。In the light-emitting device obtained by using the laminate of the present invention, from the viewpoint of suppressing azimuth unevenness of light emission, it is preferable that the film thickness of the phosphor sheet covering the LED chip varies little at any position, Since the luminous intensity from the surface is weaker than that from the side, it is preferable that the film thickness of the side surface of the LED chip be thinner than that of the top surface of the chip. Here, the azimuth unevenness of light emission means that the visual effect of the light from the light emitting device ("see え square" in Japanese) varies depending on the angle. Such azimuth unevenness can be determined by the color temperature at a distance of 10 cm from the upper surface of the LED chip of the light-emitting device in the vertical direction (hereinafter referred to as the vertical color temperature) and the upper surface of the LED chip of the light-emitting device at an angle of 45°. The color temperature at a distance of 10 cm (hereinafter referred to as 45° color temperature) is judged by the absolute value of the difference. In the present invention, the smaller the absolute value of the difference, the smaller the azimuth unevenness of light emission, which is preferable.

从上述观点考虑,在本发明中,将LED芯片14与荧光体片材3在LED芯片14的上表面接触的部分(区域)中从LED芯片14的上表面到荧光体片材3的外表面的距离设为距离a[μm]、将LED芯片14与荧光体片材3在LED芯片14的侧面接触的部分(区域)中从LED芯片14的侧面到荧光体片材3的外表面的距离设为距离b[μm]时,从抑制发光不均的观点考虑,优选满足0.80<a/b<1.50的关系,更优选为1.00<a/b<1.20,进一步优选为1.00<a/b<1.05。From the above viewpoint, in the present invention, in the portion (area) where the LED chip 14 and the phosphor sheet 3 are in contact with the upper surface of the LED chip 14, from the upper surface of the LED chip 14 to the outer surface of the phosphor sheet 3 The distance is set as the distance a [μm], the distance from the side surface of the LED chip 14 to the outer surface of the phosphor sheet 3 in the portion (area) where the LED chip 14 and the phosphor sheet 3 are in contact with the side face of the LED chip 14 When the distance b [μm] is used, it is preferable to satisfy the relationship of 0.80<a/b<1.50, more preferably 1.00<a/b<1.20, and still more preferably 1.00<a/b< 1.05.

即,对于本发明的发光装置,优选[a/b]的关系满足上述范围。另外,在制造上述发光装置时,优选采用在得到的发光装置中使[a/b]的关系满足上述范围的制造方法。That is, in the light-emitting device of the present invention, it is preferable that the relationship of [a/b] satisfies the above range. In addition, when producing the above-mentioned light-emitting device, it is preferable to adopt a production method in which the relationship of [a/b] satisfies the above-mentioned range in the obtained light-emitting device.

因此,为了满足上述关系,用于获得本发明的发光装置的优选的制造方法包括用本发明的层叠体的荧光体片材将接合在基板上的LED芯片(特别是LED芯片的发光面、或上表面及侧面)进行被覆的工序(被覆工序)。Therefore, in order to satisfy the above relationship, a preferred manufacturing method for obtaining the light-emitting device of the present invention includes bonding the LED chip (in particular, the light-emitting surface of the LED chip, or The upper surface and the side surface) are coated (coating process).

如上所述,用于获得本发明的发光装置的制造方法优选为在用本发明的层叠体的荧光体片材进行被覆的工序(被覆工序)中满足上述关系的发光装置的制造方法。As described above, the manufacturing method for obtaining the light-emitting device of the present invention is preferably a method of manufacturing a light-emitting device that satisfies the above relationship in the step of coating with the phosphor sheet of the laminate of the present invention (coating step).

实施例Example

以下,通过实施例更具体地说明本发明。Hereinafter, the present invention will be described more specifically by way of examples.

<荧光体片材><Phosphor sheet>

·有机硅树脂1:·Silicone resin 1:

树脂主要成分(MeViSiO2/2)0.25(Ph2SiO2/2)0.3(PhSiO3/2)0.45(HO1/2)0.0375重量份Resin main component (MeViSiO 2/2 ) 0.25 (Ph 2 SiO 2/2 ) 0.3 (PhSiO 3/2 ) 0.45 (HO 1/2 ) 0.03 75 parts by weight

硬度调节剂ViMe2SiO(MePhSiO)17.5SiMe2Vi10重量份Hardness regulator ViMe 2 SiO (MePhSiO) 17.5 SiMe 2 Vi 10 parts by weight

交联剂(HMe2SiO)2SiPh225重量份Crosslinking agent (HMe 2 SiO) 2 SiPh 2 25 parts by weight

※其中,Me:甲基,Vi:乙烯基,Ph:苯基※ Among them, Me: methyl, Vi: vinyl, Ph: phenyl

反应抑制剂1-乙炔基己醇0.025重量份0.025 parts by weight of reaction inhibitor 1-ethynyl hexanol

铂催化剂铂(1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷)络合物1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷溶液[铂含量为5重量%]0.01重量份Platinum catalyst Platinum (1,3-divinyl-1,1,3,3-tetramethyldisiloxane) complex 1,3-divinyl-1,1,3,3-tetramethyldisiloxane Disiloxane solution [platinum content is 5% by weight] 0.01 parts by weight

·有机硅树脂2:KER6075(信越化学工业制)。- Silicone resin 2: KER6075 (manufactured by Shin-Etsu Chemical Co., Ltd.).

·荧光体1:NYAG-02(Intematix公司制:掺杂Ce的YAG系荧光体,比重:4.8g/cm3,D50:7μm)。- Phosphor 1: NYAG-02 (manufactured by Intematix: Ce-doped YAG-based phosphor, specific gravity: 4.8 g/cm 3 , D50: 7 μm).

(荧光体片材的储能模量测定方法)(Measuring method of storage modulus of phosphor sheet)

测定装置:粘弹性测定装置ARES-G2(TAINSTRUMENTS制)Measuring device: viscoelasticity measuring device ARES-G2 (manufactured by TAINSTRUMENTS)

几何形状(Geometry):平行圆板型(15mm)Geometry: Parallel circular plate type (15mm)

应变:1%Strain: 1%

角频率:1HzAngular frequency: 1Hz

温度范围:25℃~140℃Temperature range: 25℃~140℃

升温速度:5℃/分钟Heating rate: 5°C/min

测定气氛:大气中。Measuring atmosphere: in the atmosphere.

将16片膜厚为50μm的荧光体片材层叠,在100℃的热板上进行加热压接,制作800μm的经一体化的膜(片材),切成直径15mm,作为测定样品。使用上述条件测定该样品,测定25℃及100℃时的储能模量。16 phosphor sheets with a film thickness of 50 μm were laminated and bonded by thermocompression on a hot plate at 100° C. to produce an integrated film (sheet) of 800 μm, which was cut into a diameter of 15 mm and used as a measurement sample. This sample was measured using the above conditions, and the storage modulus at 25°C and 100°C was measured.

(荧光体片材的制造方法)(Manufacturing method of phosphor sheet)

[荧光体片材的制造例1][Manufacturing Example 1 of Phosphor Sheet]

使用容积为300ml的聚乙烯制容器,以有机硅树脂1为30重量%、荧光体1为70重量%的比率进行混合。之后,使用行星式搅拌·脱泡装置“MAZERUSTARKK-400”(KURABO制),以1000rpm搅拌·脱泡20分钟,得到片材作成用荧光体分散液。使用缝模涂布机将片材作成用荧光体分散液涂布在作为基材的“Cerapeel”WDS(东丽膜加工株式会社制;膜厚为50μm,断裂伸长率为115%,杨氏模量为4500MPa)的剥离面上,于120℃加热1小时,进行干燥,得到膜厚为50μm、100mm见方的荧光体片材1。该荧光体片材的储能模量25℃时为1.0MPa,100℃时为0.025MPa。Using a container made of polyethylene with a volume of 300 ml, they were mixed at a ratio of 30% by weight of the silicone resin 1 and 70% by weight of the phosphor 1 . Thereafter, the mixture was stirred and defoamed at 1000 rpm for 20 minutes using a planetary stirring and defoaming device "MAZERUSTARKK-400" (manufactured by KURABO), to obtain a phosphor dispersion for sheet preparation. Use a slot die coater to coat the phosphor dispersion liquid for sheet preparation on "Cerapeel" WDS (manufactured by Toray Film Processing Co., Ltd.; film thickness: 50 μm, elongation at break: 115%, Young's The peeling surface with a modulus of 4500 MPa) was heated at 120° C. for 1 hour and dried to obtain a phosphor sheet 1 having a film thickness of 50 μm and a size of 100 mm square. The storage modulus of the phosphor sheet was 1.0 MPa at 25°C and 0.025 MPa at 100°C.

[荧光体片材的制造例2][Manufacturing Example 2 of Phosphor Sheet]

使用有机硅树脂2来代替有机硅树脂1,除此之外,与制造例1同样地得到膜厚为50μm、100mm见方的荧光体片材2。该荧光体片材的储能模量25℃时为1.1MPa,100℃时为0.35MPa。Except having used the silicone resin 2 instead of the silicone resin 1, it carried out similarly to manufacture example 1, and obtained the phosphor sheet 2 with a film thickness of 50 micrometers and 100 mm square. The storage modulus of this phosphor sheet was 1.1 MPa at 25°C and 0.35 MPa at 100°C.

<层叠体><Laminate>

(支承基材)(support substrate)

对于支承基材在23℃时的断裂伸长率、杨氏模量,使用TensilonRTF-1310(A&D制),利用基于ASTM-D882-12的方法测定3次,求出其平均值。The elongation at break and the Young's modulus of the support substrate at 23° C. were measured three times by a method based on ASTM-D882-12 using Tensilon RTF-1310 (manufactured by A&D), and the average value was obtained.

试样尺寸:宽度10mm,初始长度30mmSample size: width 10mm, initial length 30mm

测定条件:温度23℃,拉伸速度300mm/min。Measuring conditions: temperature 23°C, tensile speed 300mm/min.

·支承基材1:聚氨酯膜MG90(武田产业制)・Support base material 1: Polyurethane film MG90 (manufactured by Takeda Sangyo)

膜厚50μm,断裂伸长率500%,杨氏模量8MPaFilm thickness 50μm, elongation at break 500%, Young's modulus 8MPa

·支承基材2:聚氨酯膜MG90(武田产业制)・Support base material 2: Polyurethane film MG90 (manufactured by Takeda Sangyo)

膜厚100μm,断裂伸长率750%,杨氏模量8MPaFilm thickness 100μm, elongation at break 750%, Young's modulus 8MPa

·支承基材3:聚氯乙烯膜(软质)C+类型(Achilles制)・Support base 3: Polyvinyl chloride film (soft) C+ type (manufactured by Achilles)

膜厚50μm,断裂伸长率350%,杨氏模量250MPaFilm thickness 50μm, elongation at break 350%, Young's modulus 250MPa

·支承基材4:带粘合剂的聚氯乙烯膜T-80MW(电气化学工业制)・Support substrate 4: Polyvinyl chloride film T-80MW with adhesive (manufactured by Denki Kagaku Kogyo)

膜厚50μm,断裂伸长率300%,杨氏模量300MPaFilm thickness 50μm, elongation at break 300%, Young's modulus 300MPa

·支承基材5:有机硅膜硅树(日文:硅樹)(三菱树脂制)・Supporting substrate 5: Silicone film Silicon tree (Japanese: Silicon tree) (manufactured by Mitsubishi Plastics)

膜厚50μm,断裂伸长率450%,杨氏模量1.6MPaFilm thickness 50μm, elongation at break 450%, Young's modulus 1.6MPa

·支承基材6:乙烯-四氟乙烯共聚物(ETFE)膜NEOFLONEF-0050(Daikin制)・Support substrate 6: Ethylene-tetrafluoroethylene copolymer (ETFE) film NEOFLONEF-0050 (manufactured by Daikin)

膜厚50μm,断裂伸长率450%,杨氏模量640MPa。The film thickness is 50 μm, the elongation at break is 450%, and the Young's modulus is 640 MPa.

[制造例1][manufacturing example 1]

在形成于“Cerapeel”WDS上的荧光体片材1上载置支承基材1,使用辊型热层压机在温度80℃、加压压力0.3MPa、传送速度0.5m/min的条件下进行挤压。放冷恢复至室温后,将“Cerapeel”WDS剥离,得到层叠体1。The support substrate 1 is placed on the phosphor sheet 1 formed on the "Cerapeel" WDS, and it is extruded using a roll-type thermal laminator at a temperature of 80°C, a pressing pressure of 0.3MPa, and a conveying speed of 0.5m/min. pressure. After standing to cool and returning to room temperature, the "Cerapeel" WDS was peeled off to obtain a laminate 1 .

[制造例2][Manufacturing example 2]

使用荧光体片材2来代替荧光体片材1,除此之外,与制造例1同样地得到层叠体2。A laminate 2 was obtained in the same manner as in Production Example 1 except that the phosphor sheet 2 was used instead of the phosphor sheet 1 .

[制造例3][Manufacturing example 3]

使用支承基材2来代替支承基材1,除此之外,与制造例1同样地得到层叠体3。A laminate 3 was obtained in the same manner as in Production Example 1 except that the support base material 2 was used instead of the support base material 1 .

[制造例4][Manufacturing example 4]

使用支承基材3来代替支承基材1,除此之外,与制造例1同样地得到层叠体4。A laminate 4 was obtained in the same manner as in Production Example 1 except that the support base material 3 was used instead of the support base material 1 .

[制造例5][Manufacturing example 5]

在形成于“Cerapeel”WDS上的荧光体片材1上,以使粘合剂层与荧光体层接触的方式载置支承基材4,使用辊型层压机在温度25℃、加压压力0.3MPa、传送速度1.0m/min的条件下进行挤压。放冷恢复至室温后,将“Cerapeel”WDS剥离,得到层叠体5。On the phosphor sheet 1 formed on the "Cerapeel" WDS, the support substrate 4 was placed so that the adhesive layer and the phosphor layer were in contact, and the pressure was applied at a temperature of 25°C and a pressure using a roll laminator. Extrusion was carried out under the conditions of 0.3MPa and conveying speed of 1.0m/min. After standing to cool and returning to room temperature, the "Cerapeel" WDS was peeled off to obtain a laminate 5 .

[制造例6][Manufacturing example 6]

在形成于“Cerapeel”WDS上的荧光体片材1上载置支承基材5,使用辊型热层压机在温度80℃、加压压力0.3MPa、传送速度0.5m/min的条件下进行挤压。放冷恢复至室温后,将“Cerapeel”WDS剥离,得到层叠体6。The supporting substrate 5 is placed on the phosphor sheet 1 formed on the "Cerapeel" WDS, and extruded using a roll-type thermal laminator at a temperature of 80°C, a pressing pressure of 0.3MPa, and a conveying speed of 0.5m/min. pressure. After standing to cool and returning to room temperature, the "Cerapeel" WDS was peeled off to obtain a laminated body 6 .

[制造例7][Manufacturing example 7]

使用支承基材6来代替支承基材1,除此之外,与制造例1同样地得到层叠体7。A laminate 7 was obtained in the same manner as in Production Example 1 except that the support base material 6 was used instead of the support base material 1 .

需要说明的是,将荧光体片材的制造例1中制作的“Cerapeel”WDS与荧光体片材1的层叠体作为层叠体8。In addition, the laminated body of "Cerapeel" WDS produced in the manufacture example 1 of a fluorescent substance sheet, and the fluorescent substance sheet 1 was made into the laminated body 8.

<发光元件><Light emitting element>

(粘贴装置)(pasting device)

使用图3所示那样的真空层压机V130(NichigoMorton制),所述真空层压机V130具有真空腔室、与加热器连接的下部压板、和包含上部压板和挠性的氟有机硅橡胶片材的压制机构。Using a vacuum laminator V130 (manufactured by NichigoMorton) as shown in FIG. Material pressing mechanism.

(发光装置的光的所视效果评价)(Evaluation of visual effects of light from light-emitting devices)

求出在垂直方向上相距发光装置的LED芯片上表面为10cm的距离处的色温度(以下称为垂直色温度)与在倾斜45°上方相距发光装置的LED芯片上表面为10cm的距离处的色温度(以下称为45°色温度)之差的绝对值,按照下述方式进行判定。Determine the color temperature at a distance of 10 cm from the upper surface of the LED chip of the light-emitting device in the vertical direction (hereinafter referred to as the vertical color temperature) and the color temperature at a distance of 10 cm from the upper surface of the LED chip of the light-emitting device above an inclination of 45°. The absolute value of the difference in color temperature (hereinafter referred to as 45° color temperature) is judged as follows.

A:|(垂直色温度)-(45°色温度)|<500KA:|(vertical color temperature)-(45°color temperature)|<500K

B:500K≤|(垂直色温度)-(45°色温度)|<1000KB: 500K≤|(vertical color temperature)-(45°color temperature)|<1000K

C:1000K≤|(垂直色温度)-(45°色温度)|。C: 1000K≤|(vertical color temperature)-(45°color temperature)|.

(追随性评价方法)(followability evaluation method)

针对LED芯片接合于基板、且被荧光体片材被覆的发光装置,在图4所示的I、II、III的位置处分别以与基板垂直的方式切断截面后,利用SEM拍摄截面图。接下来,由各个截面图计算出荧光体片材与LED芯片的上部发光面进行接触的部分的比例。需要说明的是,在图4中,A/D=1/10,B/D=5/10,C/D=9/10。For a light-emitting device in which an LED chip is bonded to a substrate and covered with a phosphor sheet, a cross-section was cut perpendicular to the substrate at positions I, II, and III shown in FIG. 4 , and a cross-sectional view was taken by SEM. Next, the ratio of the portion where the phosphor sheet contacts the upper light emitting surface of the LED chip was calculated from each cross-sectional view. It should be noted that, in FIG. 4 , A/D=1/10, B/D=5/10, and C/D=9/10.

另外,同样地计算出荧光体片材与LED芯片的侧部发光面进行接触的部分的比例。针对各个比例,将3处的测定结果的平均值作为对上部发光面的追随性及对侧部发光面的追随性,根据以下标准来评价追随性。In addition, the ratio of the portion of the phosphor sheet in contact with the side light emitting surface of the LED chip was calculated in the same manner. For each ratio, the average value of the measurement results at three places was used as the followability to the upper light emitting surface and the followability to the side light emitting surface, and the followability was evaluated according to the following criteria.

A:LED上部发光面的追随性为100%、且侧部发光面的追随性为90%以上A: The followability of the upper light emitting surface of the LED is 100%, and the followability of the side light emitting surface is 90% or more

B:LED上部发光面的追随性为100%、且侧部发光面的追随性为70%以上且小于90%B: The followability of the upper light emitting surface of the LED is 100%, and the followability of the side light emitting surface is 70% or more and less than 90%

C:LED上部发光面的追随性为100%、且侧部发光面的追随性为50%以上且小于70%C: The followability of the upper light emitting surface of the LED is 100%, and the followability of the side light emitting surface is 50% or more and less than 70%

D:LED上部发光面的追随性为90%以上且小于100%,或者侧部发光面的追随性为40%以上且小于50%D: The followability of the upper light-emitting surface of the LED is 90% or more and less than 100%, or the followability of the side light-emitting surface is 40% or more and less than 50%.

E:LED上部发光面的追随性小于90%,或者侧部发光面的追随性小于40%。E: The followability of the upper light emitting surface of the LED is less than 90%, or the followability of the side light emitting surface is less than 40%.

(膜厚均匀性评价)(Evaluation of film thickness uniformity)

由利用上述追随性评价方法得到的基于SEM的截面图,测量出LED芯片14与荧光体片材3在LED芯片14的上表面接触的部分中的从LED芯片14的上表面到荧光体片材3的外表面的距离a(参见图4)。另外,同样地测量出LED芯片14与荧光体片材3在LED芯片14的侧面接触的部分中的从LED芯片14的侧面到荧光体片材3的外表面的距离b(参见图4)。在测量距离a及距离b时,以有效数字为三位的形式进行测量。将小数点后第三位四舍五入求出a/b的值,根据以下标准来评价膜厚均匀性。From the SEM-based cross-sectional view obtained by the above-mentioned followability evaluation method, the distance from the upper surface of the LED chip 14 to the phosphor sheet in the portion where the LED chip 14 and the phosphor sheet 3 are in contact with the upper surface of the LED chip 14 was measured. 3 of the outer surface of the distance a (see Figure 4). In addition, the distance b from the side of the LED chip 14 to the outer surface of the phosphor sheet 3 in the portion where the LED chip 14 and the phosphor sheet 3 contact on the side of the LED chip 14 was similarly measured (see FIG. 4 ). When measuring distance a and distance b, measure with three effective figures. The value of a/b was obtained by rounding off the third decimal place, and the film thickness uniformity was evaluated according to the following criteria.

A:1.00<a/b<1.05A: 1.00<a/b<1.05

B:1.05≤a/b<1.20B: 1.05≤a/b<1.20

C:0.80<a/b≤1.00或1.20≤a/b<1.50C: 0.80<a/b≤1.00 or 1.20≤a/b<1.50

D:a/b≤0.80或1.50≤a/b,或不能评价的情形。D: a/b≦0.80 or 1.50≦a/b, or a case where evaluation was not possible.

[实施例1][Example 1]

隔着厚度为10μm的金凸块将尺寸为1mm见方、厚度为150μm的LED芯片接合在设置有电极的氧化铝制陶瓷基板上。然后,将层叠体1切断为3mm见方,以其荧光体片材面与接合后的LED芯片的上表面接触的方式进行重合。将其设置在位于真空层压机的真空腔室内的下部压板上。然后,将下部压板加热至80℃后,将真空腔室密闭。利用真空泵将真空腔室内减压至0.001MPa后,维持30秒。之后,向压制机构送入0.1MPa的空气,使氟有机硅橡胶片材膨胀,以沿着LED芯片的形状的方式将层叠体1挤压10秒。然后,打开真空腔室(即,向真空腔室注入空气,恢复至大气压(0.1MPa)),取出被覆有荧光体片材的发光装置。其中,在该阶段中,经被覆的荧光体片材仍然为B阶段(半固化的状态)。An LED chip having a size of 1 mm square and a thickness of 150 μm was bonded to an alumina ceramic substrate provided with electrodes through gold bumps having a thickness of 10 μm. Then, the laminated body 1 was cut into 3 mm square, and it laminated|stacked so that the phosphor sheet surface may contact the upper surface of the LED chip after joining. Set it on the lower platen located inside the vacuum chamber of the vacuum laminator. Then, after heating the lower platen to 80° C., the vacuum chamber was sealed. The inside of the vacuum chamber was depressurized to 0.001 MPa with a vacuum pump, and then maintained for 30 seconds. Thereafter, air of 0.1 MPa was fed into the pressing mechanism to expand the fluorosilicone rubber sheet, and the laminated body 1 was pressed for 10 seconds so as to follow the shape of the LED chip. Then, the vacuum chamber was opened (that is, air was injected into the vacuum chamber to return to atmospheric pressure (0.1 MPa)), and the light-emitting device covered with the phosphor sheet was taken out. However, in this stage, the coated phosphor sheet is still in the B stage (semi-cured state).

从上述发光装置除去支承基材后,在加热至150℃的恒温烘箱内加热2小时,使荧光体片材充分固化,得到最终的发光装置。向得到的发光装置通入30mA的电流,由此使发光装置发光,测定在垂直方向(垂线方向)上距LED芯片发光面为10cm的位置的垂直色温度、和在与该垂线所成的角度为45°的方向(倾斜45°方向)上距LED芯片发光面为10cm的位置的45°色温度,由此评价光的所视效果。然后,针对已进行了光的所视效果评价的发光元件,以与基板垂直的方式切断截面,然后利用SEM拍摄截面图。由该截面图评价追随性和膜厚均匀性。After removing the supporting base material from the above-mentioned light-emitting device, it was heated in a constant temperature oven heated to 150° C. for 2 hours to fully cure the phosphor sheet to obtain the final light-emitting device. Pass a current of 30 mA to the obtained light-emitting device, thereby causing the light-emitting device to emit light, and measure the vertical color temperature at a position 10 cm away from the light-emitting surface of the LED chip in the vertical direction (vertical line direction) and the vertical color temperature at a position formed by the vertical line. The angle is the 45° color temperature at a position 10cm away from the light-emitting surface of the LED chip in the direction of 45° (inclined 45° direction), so as to evaluate the visual effect of light. Then, the cross-section of the light-emitting element evaluated for the visual effect of light was cut perpendicular to the substrate, and a cross-sectional view was taken by SEM. Trackability and film thickness uniformity were evaluated from this cross-sectional view.

[实施例2~6][Embodiments 2-6]

使用表1中记载的层叠体,除此之外,与实施例1同样地得到发光装置。对于得到的发光装置,与实施例1同样地评价光的所视效果、追随性及膜厚均匀性。A light-emitting device was obtained in the same manner as in Example 1 except that the laminate described in Table 1 was used. Regarding the obtained light-emitting device, the visual effect, followability, and film thickness uniformity of light were evaluated in the same manner as in Example 1.

[比较例1~2][Comparative examples 1-2]

使用表1中记载的层叠体,除此之外,与实施例1同样地得到发光装置。对于得到的发光装置,与实施例1同样地评价光的所视效果、追随性及膜厚均匀性。A light-emitting device was obtained in the same manner as in Example 1 except that the laminate described in Table 1 was used. Regarding the obtained light-emitting device, the visual effect, followability, and film thickness uniformity of light were evaluated in the same manner as in Example 1.

由实施例的结果可知,通过使用具有在23℃时断裂伸长率为200%以上、杨氏模量为600MPa以下的支承基材和荧光体片材的层叠体,能够利用荧光体片材在保持追随性和膜厚均匀性的情况下被覆LED芯片。From the results of the examples, it can be seen that by using a laminate having a supporting base material and a phosphor sheet having an elongation at break of 200% or more at 23°C and a Young's modulus of 600 MPa or less, the phosphor sheet can be used in Cover LED chips while maintaining followability and uniformity of film thickness.

另外,使上述发光装置发光的结果是,实施例的发光元件从任意方向都均匀地发出光,而比较例的发光元件从倾斜方向观察时看起来稍暗。由此可知发生了方位不均。In addition, as a result of making the above-mentioned light-emitting device emit light, the light-emitting element of the example uniformly emitted light from any direction, while the light-emitting element of the comparative example looked slightly dark when viewed from an oblique direction. From this, it can be seen that azimuth unevenness has occurred.

如上所述,对于使用本发明的层叠体能够追随性和膜厚均匀性优异地进行粘贴的发光元件而言,LED芯片的垂直方向上的色温度与倾斜45°方向上的色温度之差小,由此可知能够抑制方位不均。As described above, the difference between the color temperature of the LED chip in the vertical direction and the color temperature in the direction inclined at 45° is small for the light-emitting element that can be pasted with excellent trackability and film thickness uniformity using the laminate of the present invention. , it can be seen that azimuth unevenness can be suppressed.

符号说明Symbol Description

1层叠体1 laminate

2支承基材2 supporting substrate

3荧光体片材3 phosphor sheets

4粘合材料(粘合剂层)4 Adhesive material (adhesive layer)

5真空腔室5 vacuum chamber

6上部压板6 upper platen

7下部压板7 lower platen

8挠性片材8 flexible sheets

9密闭空间(压制机构用)9 Confined space (for pressing mechanism)

10空气注入·排出口(压制机构用)10 Air injection and discharge port (for press mechanism)

11压制机构11 pressing mechanism

12空气注入·排出口(真空腔室用)12 Air injection and exhaust port (for vacuum chamber)

13基板13 Substrate

14LED芯片14 LED chips

15发光装置15 light emitting device

16LED芯片上表面及侧面中的被覆部16 Covering parts on the upper surface and side surfaces of the LED chip

17基材中的被覆部17 Coating part in base material

18凸块(例如,金制的凸块)18 bumps (for example, gold bumps)

Claims (7)

1. a duplexer, it comprises supporting substrate and fluorophor sheet material, described fluorophor sheet material contains fluorophor and resin, wherein, elongation at break when utilizing 23 DEG C of the described supporting substrate that tension test obtains is more than 200%, and Young's modulus when the 23 of described supporting substrate DEG C is below 600MPa.
2. duplexer as claimed in claim 1, wherein, Young's modulus during 23 DEG C of described supporting substrate is below 400MPa.
3. duplexer as claimed in claim 1, wherein, Young's modulus during 23 DEG C of described supporting substrate is below 100MPa.
4. duplexer as claimed any one in claims 1 to 3, wherein, described supporting substrate is polrvinyl chloride or polyurethane.
5. a manufacture method for light-emitting device, it includes following coating operation: would be engaged to the operation that the fluorophor sheet material of the duplexer according to any one of light-emitting area Claims 1-4 of the LED chip on substrate carries out being coated to.
6. a manufacture method for light-emitting device, it includes following coating operation: would be engaged to the operation that the fluorophor sheet material of the duplexer according to any one of the upper surface of the LED chip on substrate and side Claims 1-4 carries out being coated to.
7. the manufacture method of the light-emitting device as described in claim 5 or 6, wherein, described LED chip and described fluorophor sheet material in the part of the upper surface of LED chip from LED chip upper surface to the distance a of fluorophor sheet material outer surface and described LED chip and described fluorophor sheet material the part of the contacts side surfaces of LED chip meet from LED chip side to the distance b of fluorophor sheet material outer surface 1.00 < a/b < 1.20 relation, described distance a, distance b unit be ��m.
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