CN105632760A - Wave-cut remaining edge type thin-film capacitor - Google Patents
Wave-cut remaining edge type thin-film capacitor Download PDFInfo
- Publication number
- CN105632760A CN105632760A CN201410616263.5A CN201410616263A CN105632760A CN 105632760 A CN105632760 A CN 105632760A CN 201410616263 A CN201410616263 A CN 201410616263A CN 105632760 A CN105632760 A CN 105632760A
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- Prior art keywords
- thin film
- wave
- coat
- cut
- metal electrode
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Links
- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 239000003990 capacitor Substances 0.000 title claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000003989 dielectric material Substances 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 6
- 239000004743 Polypropylene Substances 0.000 claims description 3
- -1 polypropylene Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 238000005507 spraying Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses a wave-cut remaining edge type thin-film capacitor, which comprises a capacitor core 1 and a capacitor body 2. The capacitor core 1 is composed of four parts which are two layers of parallel thin-film dielectric 3, a metal coating electrode 4 located on the thin-film dielectric 3, a metal spraying layer on the surface of the metal coating electrode 4 and a lead 5 welded on the metal spraying layer. The right side of the metal coating electrode 4 and the right side of the thin-film dielectric 3 are both of a wave-shaped structure formed in a wave-cut manner. A remaining edge 6 is disposed between the right side of the metal coating electrode 4 and the right side of the thin-film dielectric 3. The invention has the beneficial effects of enhanced current resistance, low loss, safety and environmental protection, simple structure and high practicality.
Description
Technical field
The present invention relates to the improvement of capacitor, particularly a kind of Wave-cut Liu Bianshi thin film capacitor.
Background technology
Between gilding layer and the fuse metal film of ordinary capacitor effectively to touch area little so that the adhesive force between gilding layer and fuse is little, causes that the gilding layer mechanical strength of thin film capacitor is relatively low, and withstanding current capability is weak, affects the life-span of capacitor.
Summary of the invention
The invention aims to solve the problems referred to above, devise a kind of Wave-cut Liu Bianshi thin film capacitor.
Realize above-mentioned purpose the technical scheme is that, a kind of Wave-cut Liu Bianshi thin film capacitor, including capacitor body 1 and capacitor body 2, the thin film dielectrics 3 that described capacitor body 1 is be arranged in parallel by two-layer, it is positioned at the coat of metal electrode 4 on thin film dielectrics 3, the gilding layer being sprayed on coat of metal electrode 4 surface is constituted with lead-in wire 5 four parts being welded on gilding layer, the right of described coat of metal electrode 4 is all the wavy shaped configuration formed by Wave-cut form along the edge, the right with thin film dielectrics 3, it is provided with between edge, the right and the edge, the right of thin film dielectrics 3 of described coat of metal electrode 4 and stays limit 6.
Described thin film dielectrics 3 is polypropylene film.
The left margin of described coat of metal electrode 4 and the left margin of thin film dielectrics 3 are all the vertical cut structures formed by vertical cut form, and the left margin of coat of metal electrode 4 overlaps with the left margin of thin film dielectrics 3.
The described limit amount of staying staying limit 6 is 0.5-2 millimeter.
Utilize the Wave-cut Liu Bianshi thin film capacitor that technical scheme makes, add the effective contact area between gilding layer and fuse metal film, improve the adhesive force between gilding layer and fuse, adding the withstanding current capability of capacitor, loss is little, safety and environmental protection, capacity high accuracy, volume are little, resistance to mechanical intensity height, cost performance are high.
Accompanying drawing explanation
Fig. 1 is the structural representation of capacitor body of the present invention;
Fig. 2 is the structural representation of Wave-cut Liu Bianshi thin film capacitor of the present invention;
In figure, 1, capacitor body; 2, capacitor body; 3, thin film dielectrics; 4, coat of metal electrode; 5, lead-in wire; 6, limit is stayed.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is specifically described, as shown in Figure 1-2, a kind of Wave-cut Liu Bianshi thin film capacitor, including capacitor body 1 and capacitor body 2, the thin film dielectrics 3 that described capacitor body 1 is be arranged in parallel by two-layer, it is positioned at the coat of metal electrode 4 on thin film dielectrics 3, the gilding layer being sprayed on coat of metal electrode 4 surface is constituted with lead-in wire 5 four parts being welded on gilding layer, the right of described coat of metal electrode 4 is all the wavy shaped configuration formed by Wave-cut form along the edge, the right with thin film dielectrics 3, it is provided with between edge, the right and the edge, the right of thin film dielectrics 3 of described coat of metal electrode 4 and stays limit 6, described thin film dielectrics 3 is polypropylene film, the left margin of described coat of metal electrode 4 and the left margin of thin film dielectrics 3 are all the vertical cut structures formed by vertical cut form, and the left margin of coat of metal electrode 4 overlaps with the left margin of thin film dielectrics 3, the described limit amount of staying staying limit 6 is 0.5-2 millimeter.
The feature of the present embodiment is, it is provided with capacitor body and capacitor body, the thin film dielectrics that capacitor body is be arranged in parallel by two-layer, it is positioned at the coat of metal electrode on thin film dielectrics, the gilding layer being sprayed on coat of metal electrode surface and lead-in wire four part being welded on gilding layer are constituted, the right of coat of metal electrode is all the wavy shaped configuration formed by Wave-cut form along the edge, the right with thin film dielectrics, it is provided with between edge, the right and the edge, the right of thin film dielectrics of coat of metal electrode and stays limit, compared with cutting technology with coating limit, the technical program adds the effective contact area between gilding layer and fuse metal film, improve the adhesive force between gilding layer and fuse, solve the relatively low problem of general thin capacitor gilding layer mechanical strength and add capacitor withstanding current capability.
In the present embodiment, adopting Wave-cut to stay limit thin film to substitute vertical cut stays limit thin film to do medium, the coat of metal is made on electrode, metal spraying rear electrode welding lead and encapsulates composition capacitor, when after energising, coat of metal electrode is charged, form electric potential difference, owing to Wave-cut stays limit thin film to increase the gilding layer contact area at wrong other layer, thus reaching to store the effect of more electric energy.
In the present embodiment, the right of coat of metal electrode is all the wavy shaped configuration formed by Wave-cut form along the edge, the right with thin film dielectrics, it is provided with between edge, the right and the edge, the right of thin film dielectrics of coat of metal electrode and stays limit, capacitor withstanding current capability is strengthened, loss is little, safety and environmental protection, resistance to mechanical intensity high, practical.
Technique scheme only embodies the optimal technical scheme of technical solution of the present invention, and some variations that some of which part is likely to make by those skilled in the art all embody principles of the invention, belong within protection scope of the present invention.
Claims (4)
1. a Wave-cut Liu Bianshi thin film capacitor, including capacitor body (1) and capacitor body (2), it is characterized in that, the thin film dielectrics (3) that described capacitor body (1) is be arranged in parallel by two-layer, it is positioned at the coat of metal electrode (4) on thin film dielectrics (3), the gilding layer being sprayed on coat of metal electrode (4) surface is constituted with lead-in wire (5) four part being welded on gilding layer, the right of described coat of metal electrode (4) is all the wavy shaped configuration formed by Wave-cut form along the edge, the right with thin film dielectrics (3), it is provided with between edge, the right and the edge, the right of thin film dielectrics (3) of described coat of metal electrode (4) and stays limit (6).
2. Wave-cut Liu Bianshi thin film capacitor according to claim 1, it is characterised in that described thin film dielectrics (3) is polypropylene film.
3. Wave-cut Liu Bianshi thin film capacitor according to claim 1, it is characterized in that, the left margin of described coat of metal electrode (4) and the left margin of thin film dielectrics (3) are all the vertical cut structures formed by vertical cut form, and the left margin of coat of metal electrode (4) overlaps with the left margin of thin film dielectrics (3).
4. Wave-cut Liu Bianshi thin film capacitor according to claim 1, it is characterised in that described in stay limit (6) stay limit amount for 0.5-2 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410616263.5A CN105632760A (en) | 2014-11-06 | 2014-11-06 | Wave-cut remaining edge type thin-film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410616263.5A CN105632760A (en) | 2014-11-06 | 2014-11-06 | Wave-cut remaining edge type thin-film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105632760A true CN105632760A (en) | 2016-06-01 |
Family
ID=56047576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410616263.5A Pending CN105632760A (en) | 2014-11-06 | 2014-11-06 | Wave-cut remaining edge type thin-film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105632760A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112912980A (en) * | 2018-10-03 | 2021-06-04 | 维斯海电子有限公司 | Film capacitor with acrylic dielectric layer inside |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004303935A (en) * | 2003-03-31 | 2004-10-28 | Okaya Electric Ind Co Ltd | Method for manufacturing capacitor |
| CN2705870Y (en) * | 2004-05-27 | 2005-06-22 | 厦门法拉电子股份有限公司 | Metalized film for producing film capacitor |
| CN2916877Y (en) * | 2006-02-21 | 2007-06-27 | 高鹏 | Metallized safety film explosion-proof capacitor |
-
2014
- 2014-11-06 CN CN201410616263.5A patent/CN105632760A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004303935A (en) * | 2003-03-31 | 2004-10-28 | Okaya Electric Ind Co Ltd | Method for manufacturing capacitor |
| CN2705870Y (en) * | 2004-05-27 | 2005-06-22 | 厦门法拉电子股份有限公司 | Metalized film for producing film capacitor |
| CN2916877Y (en) * | 2006-02-21 | 2007-06-27 | 高鹏 | Metallized safety film explosion-proof capacitor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112912980A (en) * | 2018-10-03 | 2021-06-04 | 维斯海电子有限公司 | Film capacitor with acrylic dielectric layer inside |
| CN112912980B (en) * | 2018-10-03 | 2022-09-27 | 维斯海电子有限公司 | Film capacitor with acrylic dielectric layer inside |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 528000 Xiqiao science and Technology Industrial Park, Nanhai District, Guangdong, Foshan Applicant after: FOSHAN CITY XINYUAN ELECTRONICS Co.,Ltd. Applicant after: GUANGDONG XINYUAN INTELLIGENT ELECTRONICS Co.,Ltd. Address before: 528000 Xiqiao science and Technology Industrial Park, Xiqiao Town, Nanhai District, Guangdong, China, Applicant before: FOSHAN NANHAI XINYUAN ELECTRONICS Co.,Ltd. Applicant before: GUANGDONG XINYUAN INTELLIGENT ELECTRONICS Co.,Ltd. |
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| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20161219 Address after: 528000 Xiqiao science and Technology Industrial Park, Nanhai District, Guangdong, Foshan Applicant after: FOSHAN CITY XINYUAN ELECTRONICS Co.,Ltd. Address before: 528000 Xiqiao science and Technology Industrial Park, Nanhai District, Guangdong, Foshan Applicant before: FOSHAN CITY XINYUAN ELECTRONICS Co.,Ltd. Applicant before: GUANGDONG XINYUAN INTELLIGENT ELECTRONICS Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160601 |